CN111725423A

CN111725423A - OLED device, preparation method thereof and display device

Info

Publication number: CN111725423A
Application number: CN202010522471.4A
Authority: CN
Inventors: 金鹏; 李松杉
Original assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Current assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date: 2020-06-10
Filing date: 2020-06-10
Publication date: 2020-09-29

Abstract

The invention discloses an OLED device, a preparation method thereof and a display device, wherein the OLED device comprises a substrate; the heat insulation layer is arranged on one side surface of the substrate; the first flexible layer is arranged on the surface of one side, away from the substrate, of the heat insulation layer; the inorganic layer is arranged on the surface of one side, away from the heat insulation layer, of the first flexible layer; and the second flexible layer is arranged on one side surface of the inorganic layer far away from the first flexible layer. The OLED device, the preparation method thereof and the display device have the advantages that the thermal insulation layer is added between the substrate and the first flexible layer, and in the process of removing the substrate by using laser, the thermal insulation layer can effectively isolate heat generated by the laser, so that the first flexible layer is prevented from being damaged by the heat energy, and the service life of the OLED device is prolonged.

Description

OLED device, preparation method thereof and display device

Technical Field

The application relates to the field of OLEDs, in particular to an OLED device, a preparation method thereof and a display device.

Background

When a traditional OLED device is manufactured, a substrate 1st PI + SiOx +2nd PI is adopted on glass, and after the OLED device is manufactured, the 1st PI and the glass are separated by an LLO (laser lift off laser) method to obtain a flexible substrate; however, since the 1st PI and the glass are in direct contact, when the LLO process is performed, the energy (400-500 mj) of the laser penetrates through the substrate to damage the 1st PI organic layer, which affects the light emission of the whole OLED device, and thus the yield is reduced.

Disclosure of Invention

To solve the above technical problems. The invention provides an OLED device, a preparation method thereof and a display device, which are used for solving the technical problem that in the prior art, when a substrate and a flexible layer are removed by laser, the flexible layer is damaged by heat generated by the laser.

The technical scheme for solving the technical problems is as follows: the invention provides an OLED device, which comprises a substrate; the heat insulation layer is arranged on one side surface of the substrate; the first flexible layer is arranged on the surface of one side, away from the substrate, of the heat insulation layer; the inorganic layer is arranged on the surface of one side, away from the heat insulation layer, of the first flexible layer; and the second flexible layer is arranged on one side surface of the inorganic layer far away from the first flexible layer.

Furthermore, the OLED device also comprises a thin film transistor back plate which is arranged on the surface of one side, far away from the inorganic layer, of the second flexible layer; the OLED layer is arranged on the surface of one side, far away from the second flexible layer, of the thin film transistor backboard; and the packaging layer is arranged on the surface of one side of the thin film transistor backboard, which is far away from the second flexible layer, and covers the OLED layer.

Further, the material of the thermal insulation layer comprises at least one of silicon oxide or silicon nitride.

Further, the material of the inorganic layer includes at least one of silicon oxide or silicon nitride.

Further, the material of the first flexible layer and the second flexible layer comprises a polyimide material.

Further, the substrate is a glass substrate.

The invention also provides a preparation method of the OLED device, which comprises the following steps: providing a substrate; preparing a layer of heat insulation material on the substrate to form a heat insulation layer; preparing a first flexible layer on the heat insulation layer; depositing an inorganic material on the first flexible layer to form an inorganic layer; and preparing a second flexible layer on the inorganic layer.

Further, after the step of preparing the second flexible layer on the inorganic layer, the method further comprises the following steps: preparing a thin film transistor backplane on the second flexible layer; preparing an OLED layer on the thin film transistor backboard; and preparing an encapsulation layer on the thin film transistor backboard, wherein the encapsulation layer encapsulates the OLED layer.

Further, after the step of preparing the packaging layer on the thin film transistor backboard, the method further comprises the step of separating the substrate and the heat insulation layer by using a laser lift-off technology.

The invention also provides a display device comprising the OLED device.

The OLED device, the preparation method thereof and the display device have the advantages that the thermal insulation layer is added between the substrate and the first flexible layer, and in the process of removing the substrate by using laser, the thermal insulation layer can effectively isolate heat generated by the laser, so that the first flexible layer is prevented from being damaged by the heat, and the service life of the OLED device is prolonged.

Drawings

The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.

FIG. 1 is a schematic structural view of an OLED device in an embodiment;

FIG. 2 is a schematic view of an embodiment in which a laser lift-off technique is used to illuminate an OLED device;

FIG. 3 is a schematic diagram of the OLED device of the embodiment with the substrate removed.

Reference numerals in the figures

10 an OLED device; a 110 substrate;

120 heat insulation layer; 130 a first flexible layer;

140 an inorganic layer; 150 a second flexible layer;

160 thin film transistor backplanes; 170 an OLED layer;

180 encapsulating the layers.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.

The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.

Examples

As shown in fig. 1, in the present embodiment, the display apparatus of the present invention includes an OLED device 10, wherein the OLED device 10 includes a substrate 110, a thermal insulation layer 120, a first flexible layer 130, an inorganic layer 140, a second flexible layer 150, a thin film transistor backplane 160, an OLED layer 170, and an encapsulation layer 180.

The substrate 110 is a hard substrate, generally a glass substrate, which plays a role of supporting and backing, and is convenient for preparing a film layer on the surface of the substrate 110.

The thermal insulation layer 120 is made of an inorganic material, in this embodiment, the thermal insulation layer 120 is made of a silicon nitride material, in other preferred embodiments of the present invention, the thermal insulation layer 120 is also made of a silicon oxide material, and since the inorganic material has a good thermal insulation effect, heat can be effectively prevented from penetrating through the thermal insulation layer 120 to erode other film layers, and the service life of the OLED device 10 can be prolonged.

The first flexible layer 130 is disposed on a side surface of the thermal insulation layer 120 away from the substrate 110, and the material of the first flexible layer 130 includes a polyimide material, which is an excellent flexible material, and can enable the OLED device 10 to be freely bent at a certain angle.

Inorganic layer 140 locates a side surface that first flexible layer 130 keeps away from insulating layer 120, in this embodiment, the material of inorganic layer 140 includes silicon oxide material, silicon oxide has the ability of good isolated water oxygen, can effectively avoid external steam to get into the OLED device, and simultaneously, inorganic layer 140 also can act as the bolster, alleviate OLED device 10 at the in-process of buckling, at the stress concentration of the department of buckling, avoid OLED device 10 to appear phenomenon of rupture at the in-process of buckling, promote OLED device 10's life.

The second flexible layer 150 is located inorganic layer 140 and is kept away from a side surface of first flexible layer 130, the material of second flexible layer 150 includes the polyimide material, polyimide is splendid flexible material, can realize that OLED device 10 buckles freely at certain angle, first flexible layer 130 and the combination of second flexible layer 150, can promote OLED device 10's pliability, also can avoid single-deck flexible layer stress concentration when buckling simultaneously, produce local cracked technical problem.

The thin film transistor backplane 160 is disposed on a surface of the second flexible layer 150 away from the inorganic layer 140, and a plurality of thin film transistor switch structures are disposed on the thin film transistor backplane 160 and control current flows through the thin film transistor switch structures to realize display of the OLED device 10.

The OLED layer 170 is disposed on a surface of the thin film transistor backplane 160 away from the second flexible layer 150, the OLED is an organic electroluminescent display, and belongs to a current-type organic light emitting device, current is controlled by the thin film transistor switch structure in the thin film transistor backplane 160, the OLED layer 170 realizes whether the OLED emits light by injecting carriers, the light emitting intensity of the OLED layer 170 is in direct proportion to the current injected into the OLED, under the action of an electric field, holes generated by an anode of the OLED and electrons generated by a cathode of the OLED move, are respectively injected into the hole transport layer and the electron transport layer, and migrate to the light emitting layer, and when the holes and the electrons meet at the light emitting layer, energy excitons are generated, so as to excite the light emitting molecules to finally generate visible light.

Encapsulation layer 180 locates thin film transistor backplate 170 and keeps away from a side surface of second flexible layer 150, and encapsulation layer 180 encapsulates OLED layer 170, and is concrete, and the material of encapsulation layer 180 is the printing opacity material, can prevent that external steam, impurity from invading OLED layer 170 to cause OLED layer 170 to show to lose efficacy, also can not shelter from the light that OLED layer 170 sent simultaneously, can not cause OLED layer 170's light loss.

As shown in fig. 2 and fig. 3, in practical applications, the substrate 110 is generally removed to achieve flexible display of the OLED device 10, in the prior art, an LLO (laser lift off) method is generally adopted to separate the substrate 110 from the first flexible layer 130, in this embodiment, the thermal insulation layer 120 is disposed between the first flexible layer 130 and the substrate 110, and during the laser lift off process, a side surface of the substrate 110 away from the thermal insulation layer 120 is irradiated with laser light to separate the substrate 110 from the thermal insulation layer 120, and meanwhile, because the thermal insulation layer 120 has a good thermal insulation effect, heat generated by the laser irradiation is not transferred to the first flexible layer 130 through the thermal insulation layer 120, so that the service life of the OLED device 10 is effectively prolonged.

In order to better explain the present invention, this embodiment further provides a method for manufacturing an OLED device, including steps S1) to S9).

S1) providing a substrate.

S2) preparing a layer of heat insulation material on the substrate to form a heat insulation layer.

S3) preparing a first flexible layer on the heat insulation layer.

S4) depositing an inorganic material on the first flexible layer to form an inorganic layer.

S5) preparing a second flexible layer on the inorganic layer.

S6) preparing a thin film transistor backplane on the second flexible layer.

S7) preparing an OLED layer on the thin film transistor backplane.

S8) preparing an encapsulation layer on the thin film transistor backboard, wherein the encapsulation layer encapsulates the OLED layer.

S9) separating the substrate and the heat insulation layer by adopting a laser stripping technology.

The beneficial effects of this embodiment are that, in the OLED device, the manufacturing method thereof, and the display device of this embodiment, a thermal insulation layer is added between the substrate and the first flexible layer, and in the process of removing the substrate by using laser, the thermal insulation layer can effectively isolate heat generated by the laser, thereby preventing the first flexible layer from being damaged by heat energy, and prolonging the service life of the OLED device.

The above description of the embodiments is only for assisting understanding of the technical solutions and the core ideas thereof; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims

1. An OLED device, comprising

A substrate;

the heat insulation layer is arranged on one side surface of the substrate;

the first flexible layer is arranged on the surface of one side, away from the substrate, of the heat insulation layer;

the inorganic layer is arranged on the surface of one side, away from the heat insulation layer, of the first flexible layer; and

and the second flexible layer is arranged on one side surface of the inorganic layer far away from the first flexible layer.

2. The OLED device of claim 1, further comprising

The thin film transistor back plate is arranged on the surface of one side, far away from the inorganic layer, of the second flexible layer;

the OLED layer is arranged on the surface of one side, far away from the second flexible layer, of the thin film transistor backboard; and

and the packaging layer is arranged on the surface of one side of the thin film transistor backboard, which is far away from the second flexible layer, and covers the OLED layer.

3. The OLED device of claim 1,

the material of the thermal insulation layer comprises at least one of silicon oxide or silicon nitride.

4. The OLED device of claim 1,

the material of the inorganic layer includes at least one of silicon oxide or silicon nitride.

5. The OLED device of claim 1,

the material of the first flexible layer and the second flexible layer comprises a polyimide material.

6. The OLED device of claim 1,

the substrate is a glass substrate.

7. The preparation method of the OLED device is characterized by comprising the following steps of:

providing a substrate;

preparing a layer of heat insulation material on the substrate to form a heat insulation layer;

preparing a first flexible layer on the heat insulation layer;

depositing an inorganic material on the first flexible layer to form an inorganic layer; and

a second flexible layer is prepared on the inorganic layer.

8. The method of manufacturing an OLED device according to claim 7,

after the step of preparing the second flexible layer on the inorganic layer, the method further comprises the following steps:

preparing a thin film transistor backplane on the second flexible layer;

preparing an OLED layer on the thin film transistor backboard; and

and preparing an encapsulation layer on the thin film transistor backboard, wherein the encapsulation layer encapsulates the OLED layer.

9. The method for preparing the OLED device according to claim 8, further comprising the step of preparing an encapsulation layer on the thin film transistor backplane

And separating the substrate and the heat insulation layer by adopting a laser stripping technology.

10. A display device comprising an OLED device as claimed in any one of claims 1 to 6.