CN110224014A - A kind of preparation method of pattern and the preparation method of display base plate - Google Patents
A kind of preparation method of pattern and the preparation method of display base plate Download PDFInfo
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- CN110224014A CN110224014A CN201910541135.1A CN201910541135A CN110224014A CN 110224014 A CN110224014 A CN 110224014A CN 201910541135 A CN201910541135 A CN 201910541135A CN 110224014 A CN110224014 A CN 110224014A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
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Abstract
The embodiment of the present invention provides a kind of preparation method of pattern and the preparation method of display base plate, is related to field of display technology, can solve the problem lower using the precision of the pattern of FMM vapor deposition.The preparation method of pattern includes that thermal insulation layer is formed in thermal-conductivity substrate；The coefficient of heat conduction of thermal-conductivity substrate is greater than the coefficient of heat conduction of thermal insulation layer；Thermal insulation layer is patterned to form heat-insulated pattern；Heat-insulated pattern includes vacancy section；Evaporation material layer is formed far from the side of thermal-conductivity substrate in heat-insulated pattern；By the one of the pattern to be formed of target base plate facing towards evaporation material layer, and make the vacancy section face in the region of pattern to be formed and heat-insulated pattern in target base plate；Thermal-conductivity substrate is heated to the first temperature, the first temperature is greater than or equal to the evaporating temperature of evaporation material layer；Evaporation material in evaporation material layer positioned at vacancy section is evaporated to the region of pattern to be formed in target base plate, forms pattern with the region of pattern to be formed in target base plate.
Description
Technical field
The present invention relates to the preparation sides of the preparation method and display base plate of field of display technology more particularly to a kind of pattern
Method.
Background technique
Currently, often needing to utilize FMM (Fine Metal Mask, fine metal mask in the preparation process of display device
Plate) vapor deposition pattern.For example, being shown at OLED (Organic Light Emitting Diode, organic electroluminescent LED)
It needs to utilize FMM vapor deposition emitting red light pattern, green emitting pattern and blue-light-emitting pattern in the preparation of device.
However, FMM is only applicable to the pattern in preparation small-medium size display device, for large scale display device, due to
FMM will appear sagging, thus the precision that will lead to the pattern to be formed is lower.In addition, for microform display device and high PPI
The display device of (Pixels Per Inch, pixel density) since the size of each sub-pix is very small, and utilizes FMM can not
Very small size of pattern is deposited, thus utilizes the pattern in the display device of FMM vapor deposition microform display device and high PPI
When, the precision of the pattern of vapor deposition is lower, is unable to reach microform display device and height so as to cause the pattern being deposited using FMM
The requirement of PPI display device.
Summary of the invention
The embodiment of the present invention provides a kind of preparation method of pattern and the preparation method of display base plate, can solve utilization
The lower problem of the precision of the pattern of FMM vapor deposition.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
On the one hand, a kind of preparation method of pattern is provided, comprising: thermal insulation layer is formed in thermal-conductivity substrate；The thermally conductive base
The coefficient of heat conduction at bottom is greater than the coefficient of heat conduction of the thermal insulation layer；The thermal insulation layer is patterned to form heat-insulated pattern；Institute
Stating heat-insulated pattern includes vacancy section；Evaporation material layer is formed far from the side of the thermal-conductivity substrate in the heat-insulated pattern；By mesh
Mark the pattern to be formed of substrate one facing towards the evaporation material layer, and make the region of pattern to be formed in the target base plate
With the vacancy section face of the heat-insulated pattern；The thermal-conductivity substrate is heated to the first temperature, first temperature is greater than or waits
In the evaporating temperature of the evaporation material layer；Evaporation material in the evaporation material layer positioned at the vacancy section is evaporated to described
The region of pattern to be formed in target base plate forms pattern with the region of pattern to be formed in the target base plate.
In some embodiments, by the one of the pattern to be formed of target base plate facing towards the evaporation material layer, comprising: will
The one of the pattern to be formed of the target base plate moves the target base plate facing towards the evaporation material layer, makes the mesh
Mark substrate is contacted with the evaporation material layer.
In some embodiments, the coefficient of heat conduction of the thermal-conductivity substrate is 20 times of the coefficient of heat conduction of the thermal insulation layer
~100 times.
In some embodiments, the thickness of the thermal insulation layer is greater than the thickness of the thermal-conductivity substrate.
In some embodiments, the thermal insulation layer with a thickness of 20 μm~50 μm；And/or the thickness of the thermal-conductivity substrate
It is 20 μm~50 μm.
In some embodiments, described to be formed before thermal insulation layer in thermal-conductivity substrate, the preparation method of the pattern is also wrapped
It includes: forming the thermal-conductivity substrate on bearing substrate；The thermal-conductivity substrate is heat-conducting substrate or thermally conductive film layer.
In some embodiments, in the case where the thermal-conductivity substrate is heat-conducting substrate, the thermal insulation layer is patterned
It is formed after heat-insulated pattern, before the thermal-conductivity substrate is heated to the first temperature, the preparation method of the pattern further include: go
Except the bearing substrate.
In some embodiments, the material of the thermal-conductivity substrate is one of silver, copper, gold, aluminium or a variety of.
In some embodiments, the material of the thermal insulation layer is silica.
On the other hand, a kind of preparation method of display base plate is provided, target base plate includes the bottom plate set gradually, Duo Ge
One electrode and pixel defining layer；The pixel defining layer includes multiple open regions, and each open region is exposed described in one
First electrode；The target base plate includes the first sub-pix, the second sub-pix and third sub-pix；The preparation of the display base plate
Method includes: the preparation method using above-mentioned pattern successively in the open region shape of first sub-pix of the target base plate
The second luminous pattern, opening in the third sub-pix are formed at the first luminous pattern, in the open region of second sub-pix
Mouth region forms third luminous pattern；Wherein, in the case where the open region of first sub-pix forms the first luminous pattern, institute
The region for stating pattern to be formed in target base plate is the open region of first sub-pix, and evaporation material layer is the first evaporation material
Layer；In the case where the open region of second sub-pix forms the second luminous pattern, pattern to be formed in the target base plate
Region be second sub-pix open region, evaporation material layer be the second evaporation material layer；In the third sub-pix
In the case that open region forms third luminous pattern, the region of pattern to be formed is the third sub-pix in the target base plate
Open region, evaporation material layer be third evaporation material layer.
The embodiment of the present invention provides a kind of preparation method of pattern and the preparation method of display base plate, the shape in thermal-conductivity substrate
At thermal insulation layer, thermal insulation layer is patterned to form heat-insulated pattern, forms vapor deposition material far from the side of thermal-conductivity substrate in heat-insulated pattern
The bed of material, then by the one of the pattern to be formed of target base plate facing towards evaporation material layer, and make pattern to be formed in target base plate
Thermal-conductivity substrate is heated to the first temperature later by the vacancy section face in region and heat-insulated pattern, since the first temperature is greater than or waits
In the evaporating temperature of evaporation material layer, thus the evaporation material in evaporation material layer positioned at heat-insulated pattern vacancy section can be evaporated to mesh
The region of pattern to be formed on substrate is marked, so that the region of pattern to be formed forms pattern in target base plate.The present invention is implemented
Example is avoided due to not using FMM during pattern is deposited in the region of pattern to be formed in target base plate in big ruler
In very little display device, the preparation process of the display device of microform display device and high PPI, the essence of the pattern of FMM vapor deposition is utilized
Spend lower problem.On this basis, thermal-conductivity substrate is heated to the first temperature, due to being located at heat-insulated pattern in evaporation material layer
The evaporation material of vacancy section (at the position contacted with thermal-conductivity substrate) can evaporate, and be located at heat-insulated pattern in evaporation material layer
On part will not evaporate, thus can only in target base plate pattern to be formed region, i.e., just with the vacancy section of heat-insulated pattern
Pair region form pattern, ensure that the precision for the pattern that the region of pattern to be formed in target base plate is formed.Based on this,
Large scale display device, microform display device or height can be prepared using the preparation method of pattern provided in an embodiment of the present invention
Pattern in the display device of PPI.
Detailed description of the invention
Technical solution in order to illustrate the embodiments of the present invention more clearly or in the related technology, below will be to embodiment or phase
Attached drawing needed in technical description is closed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of flow diagram of the preparation method of pattern provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram that thermal insulation layer is formed in thermal-conductivity substrate provided in an embodiment of the present invention；
Fig. 3 is another structural schematic diagram that thermal insulation layer is formed in thermal-conductivity substrate provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram that heat-insulated pattern is formed in thermal-conductivity substrate provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram that evaporation material layer is formed on heat-insulated pattern provided in an embodiment of the present invention；
Fig. 6 is a kind of structural schematic diagram of target base plate and evaporation material layer face provided in an embodiment of the present invention；
Fig. 7 is that the evaporation material in a kind of evaporation material layer provided in an embodiment of the present invention positioned at vacancy section is evaporated to target
Structural schematic diagram on substrate；
Fig. 8 is a kind of structural schematic diagram that target base plate is contacted with evaporation material layer provided in an embodiment of the present invention；
Fig. 9 is a kind of structural schematic diagram of target base plate provided in an embodiment of the present invention；
Figure 10 is the structural schematic diagram of another target base plate provided in an embodiment of the present invention；
Figure 11 is the knot that a kind of open region in the first sub-pix provided in an embodiment of the present invention forms the first luminous pattern
Structure schematic diagram；
Figure 12 is the knot that a kind of open region in the second sub-pix provided in an embodiment of the present invention forms the second luminous pattern
Structure schematic diagram；
Figure 13 is the knot that a kind of open region in third sub-pix provided in an embodiment of the present invention forms third luminous pattern
Structure schematic diagram；
Figure 14 is one kind provided in an embodiment of the present invention in the first luminous pattern, the second luminous pattern and third luminous pattern
The upper structural schematic diagram for forming the second electrode lay.
Appended drawing reference:
10- thermal-conductivity substrate；11- bottom plate；12- first electrode；13- pixel defining layer；The first luminous pattern of 14-；15- second
Luminous pattern；16- third luminous pattern；17- the second electrode lay；20- thermal insulation layer；30- evaporation material layer；40- target base plate；
100- bearing substrate；110- underlay substrate；111- thin film transistor (TFT)；112- flatness layer；The heat-insulated pattern of 201-；401- pattern.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of preparation method of pattern, as shown in Figure 1, comprising:
S100, as shown in Figures 2 and 3, the formation thermal insulation layer 20 in thermal-conductivity substrate 10；The coefficient of heat conduction of thermal-conductivity substrate 10
(also referred to as thermal coefficient or heat transfer coefficient) is greater than the coefficient of heat conduction of thermal insulation layer 20.
Herein, thermal insulation layer 20 can be formed in thermal-conductivity substrate 10 using the methods of deposition or coating.
In some embodiments, as shown in Fig. 2, thermal-conductivity substrate 10 is heat-conducting substrate.In further embodiments, such as Fig. 3
Shown, thermal-conductivity substrate 10 is thermally conductive film layer.It will be understood by those skilled in the art that the case where thermal-conductivity substrate 10 is thermally conductive film layer
Under, as shown in figure 3, thermally conductive film layer should be formed on bearing substrate 100.
Under the conditions of the coefficient of heat conduction refers to steady heat transfer, the material of 1m thickness, the temperature difference of both side surface was 1 degree, at 1 second
Heat that is interior, being transmitted by 1 square metre of area.Heat transfer formula is Q=KA Δ t, wherein Q is heat, and K is heat transfer system
Number, A are heat transfer area, and Δ t is the temperature difference of both side surface.Coefficient of heat conduction K and the temperature difference Δ t of both side surface are inversely proportional,
For same heat, coefficient of heat conduction K is bigger, and the temperature difference Δ t of both side surface is smaller, and heat-transfer effect is better, coefficient of heat conduction K
Smaller, the temperature difference Δ t of both side surface is bigger, and heat-transfer effect is poorer.
The material of material and thermal insulation layer 20 for thermal-conductivity substrate 10 is without limiting, with the heat transfer system of thermal-conductivity substrate 10
Number is greater than subject to the coefficient of heat conduction of thermal insulation layer 20.In some embodiments, the material of thermal-conductivity substrate 10 is metal material.Example
, metal material is one of silver (Ag), copper (Cu), golden (Au), aluminium (Al) or a variety of.The coefficient of heat conduction of silver is 429W/
MK, the coefficient of heat conduction of copper are 410W/mK, and the golden coefficient of heat conduction is 317W/mK, and the coefficient of heat conduction of aluminium is 250W/mK.
In some embodiments, the material of thermal insulation layer 20 is silica (SiO2), rubber, epoxy resin, paraffin etc..Two
The coefficient of heat conduction of silica is 7.6W/mK, and the coefficient of heat conduction of rubber is 0.19~0.26, and the coefficient of heat conduction of paraffin is
0.12W/mK。
S101, as shown in figure 4, being patterned to form heat-insulated pattern 201 to thermal insulation layer 20；Heat-insulated pattern 201 includes hollow out
Area.
It is to be understood that the coefficient of heat conduction of heat-insulated pattern 201 is identical as the coefficient of heat conduction of thermal insulation layer 20, heat-insulated pattern
201 thickness is identical as the thickness of thermal insulation layer 20.
Herein, composition includes mask exposure, development and etching technics.It is to be understood that being used during mask exposure
Mask plate it is different from the FMM that vapor deposition uses, using mask plate used in mask exposure process carry out mask exposure can obtain
Precision is higher and the lesser pattern of size.
On this basis, heat-insulated pattern 201 can be formed according to the pattern needed to form in following target base plates.
S102, as shown in figure 5, heat-insulated pattern 201 far from thermal-conductivity substrate 10 side formed evaporation material layer 30.
It herein, can be using techniques such as vapor deposition, spin coating or injections in side shape of the heat-insulated pattern 201 far from thermal-conductivity substrate 10
At evaporation material layer 30.
Further, since the material of the pattern needed to form in target base plate is identical as the material of evaporation material layer 30, therefore
The material of evaporation material layer 30 can be determined according to the material of the pattern needed to form in target base plate.
On this basis, due to the thickness phase of the thickness and evaporation material layer 30 of the pattern needed to form in target base plate
Together, thus the thickness of evaporation material layer 30 can be determined according to the thickness of the pattern needed to form in target base plate.
S103, as shown in fig. 6, by the one of the pattern to be formed of target base plate (also referred to as Target substrate) 40 facing towards steaming
Material layer 30 is plated, and makes the vacancy section face in the region of pattern to be formed and heat-insulated pattern 201 in target base plate 40.
S104, as shown in fig. 7, thermal-conductivity substrate 10 is heated to the first temperature, the first temperature is greater than or equal to evaporation material
The evaporating temperature of layer 30；Evaporation material in evaporation material layer 30 positioned at heat-insulated 201 vacancy section of pattern is evaporated to target base plate 40
The region of upper pattern to be formed forms pattern 401 with the region of pattern to be formed in target base plate 40.
Herein, heating source can be placed in the lower section of thermal-conductivity substrate 10, thermal-conductivity substrate 10 is heated to the first temperature.Add
Heat source can be for example resistance wire or heating plate etc..
After thermal-conductivity substrate 10 is heated to the first temperature, since the first temperature is greater than or equal to the evaporation of evaporation material layer 30
Temperature, thus the region contacted in evaporation material layer 30 with thermal-conductivity substrate 10, namely the steaming positioned at the vacancy section of heat-insulated pattern 201
Plating material can be evaporated to the region in target base plate 40 with the vacancy section face of heat-insulated pattern 201.Due in target base plate 40 to
The region of pattern and the vacancy section face of heat-insulated pattern 201 are formed, therefore evaporation material layer 30 is located at the hollow out of heat-insulated pattern 201
The evaporation material in area can be evaporated to the region of pattern to be formed in target base plate 40.
The coefficient of heat conduction of heat-insulated pattern 201 is less than the coefficient of heat conduction of thermal-conductivity substrate 10, due to the heat of thermal-conductivity substrate 10
The coefficient of conductivity is big, thus when heating to thermal-conductivity substrate 10, according to above-mentioned heat transfer formula, the temperature of 10 upper and lower surface of thermal-conductivity substrate
Degree difference is small, and the upper surface of thermal-conductivity substrate 10 can quickly reach the evaporating temperature of evaporation material, make to contact with thermal-conductivity substrate 10
Evaporation material (i.e. positioned at the evaporation material of the vacancy section of heat-insulated pattern 201) evaporation, and due to the heat transfer of heat-insulated pattern 201
Coefficient is small, and according to above-mentioned heat transfer formula, the temperature difference of heat-insulated 201 upper and lower surface of pattern is big, and heat-insulated pattern 201 is far from thermally conductive base
The surface at bottom 10 is unable to reach the evaporating temperature of evaporation material, therefore is located at the portion on heat-insulated pattern 201 in evaporation material layer 30
Dividing cannot evaporate.As shown in fig. 7, the evaporation material on heat-insulated pattern 201 is still when thermal-conductivity substrate 10 is heated to the first temperature
It is retained on heat-insulated pattern 201.
Based on this, evaporates, be located in order to ensure being located at the evaporation material of heat-insulated 201 vacancy section of pattern in evaporation material layer 30
Evaporation material on heat-insulated pattern 201 does not evaporate, therefore the coefficient of heat conduction and heat-insulated figure of the material for the thermal-conductivity substrate 10 chosen
The difference of the coefficient of heat conduction of the material of case 201 is the bigger the better.
Thermal-conductivity substrate 10 material be silver-colored thermal insulation layer 20 material be silica in the case where, due to the heat biography of silver
When leading 56 times of the coefficient of heat conduction that coefficient is silica, thus being heated to thermal-conductivity substrate 10, when thermal-conductivity substrate 10
When temperature reaches 260 DEG C, the temperature of silica is lower than 5 DEG C.Since the evaporation temperature of evaporation material layer 30 is not achieved in silica
Degree, thus the part being located on silica in evaporation material layer 30 cannot evaporate.
In the related technology using FMM when pattern is deposited in the region of pattern to be formed in target base plate 40, for being applied to
Target base plate 40 in large scale display device, since the size of target base plate 40 is larger, the ruler of the FMM needed when pattern is deposited
It is very little larger, and FMM size it is larger will appear it is sagging, thus be deposited pattern precision it is lower.In addition, for microform display device
And the display device of high PPI, since the size of each sub-pix is very small, and can not be deposited using FMM very small size of
Pattern, thus in the preparation process of the display device in microform display device and high PPI, utilize the essence of the pattern of FMM vapor deposition
It spends lower.
The embodiment of the present invention provides a kind of preparation method of pattern, thermal insulation layer 20 is formed in thermal-conductivity substrate 10, to heat-insulated
Layer 20 is patterned to form heat-insulated pattern 201, forms evaporation material layer far from the side of thermal-conductivity substrate 10 in heat-insulated pattern 201
30, then by the one of the pattern to be formed of target base plate 40 facing towards evaporation material layer 30, and make figure to be formed in target base plate 40
Thermal-conductivity substrate 10 is heated to the first temperature later by the vacancy section face in the region of case and heat-insulated pattern 201, due to the first temperature
Degree is greater than or equal to the evaporating temperature of evaporation material layer 30, thus positioned at heat-insulated 201 vacancy section of pattern in evaporation material layer 30
Evaporation material can be evaporated to the region of pattern to be formed in target base plate 40, thus in target base plate 40 pattern to be formed area
Domain forms pattern 401.Process of the embodiment of the present invention due to the region vapor deposition pattern 401 of pattern to be formed in target base plate 40
In do not use FMM, thus avoid the preparation of the display device in large scale display device, microform display device and high PPI
In the process, the problem lower using the precision of the pattern of FMM vapor deposition.On this basis, thermal-conductivity substrate 10 is heated to the first temperature
Degree, the steaming of the vacancy section (at the position contacted with thermal-conductivity substrate 10) due to being located at heat-insulated pattern 201 in evaporation material layer 30
Plating material can evaporate, and the part being located on heat-insulated pattern 201 in evaporation material layer 30 will not evaporate, thus can only be in target base
The region of pattern to be formed on plate 40, i.e., form pattern 401 with the region of the vacancy section face of heat-insulated pattern 201, so that it is guaranteed that
The precision for the pattern that the region of pattern to be formed is formed in target base plate 40.Based on this, utilization is provided in an embodiment of the present invention
The preparation method of pattern can prepare the pattern in the display device of large scale display device, microform display device or high PPI.
When thermal-conductivity substrate 10 is heated to the first temperature, positioned at the vacancy section of heat-insulated pattern 201 in evaporation material layer 30
Evaporation material can be deposited, it is contemplated that when the distance between target base plate 40 and thermal-conductivity substrate 10 are larger, evaporation material was evaporating
It is possible to be diffused into the region in target base plate 40 other than the region of pattern to be formed in journey, to affect target base plate 40
The precision of the pattern 401 of upper formation.
Based on above-mentioned, in some embodiments, by the one of the pattern to be formed of target base plate 40 facing towards evaporation material layer
30, comprising:
As shown in figure 8, by the one of the pattern to be formed of target base plate 40 facing towards evaporation material layer 30, and move target base
Plate 40 contacts target base plate 40 with evaporation material layer 30.
Evaporation material layer 30 includes part on the heat-insulated pattern 201 and positioned at the vacancy section of heat-insulated pattern 201
Part.Since close-target base is leaned on relative to the part for the vacancy section for being located at heat-insulated pattern 201 in the part being located on heat-insulated pattern 201
Plate 40, it should thus be appreciated that, target base plate 40 is contacted with evaporation material layer 30, refers to target base plate 40 and evaporation material layer
The part contact being located on heat-insulated pattern 201 in 30.
Herein, when target base plate 40 and evaporation material layer 30 contact, the spacing between target base plate 40 and thermal-conductivity substrate 10
For the thickness of heat-insulated pattern 201 and the sum of the thickness of evaporation material layer 30.
In the embodiment of the present invention, due to by the one of the pattern to be formed of target base plate 40 facing towards evaporation material layer 30, and
Mobile target base plate 40, contacts target base plate 40 with evaporation material layer 30, thus heats thermal-conductivity substrate 10, to evaporation material layer
When evaporation material in 30 positioned at vacancy section is deposited, evaporation material can be prevented to be diffused into target base plate in evaporation process
Region on 40 other than the region of pattern to be formed, it is ensured that evaporation material is only capable of being deposited pattern to be formed in target base plate 40
Region further improves the precision of the pattern formed in target base plate 40.
If the coefficient of heat conduction difference of the coefficient of heat conduction and thermal insulation layer 20 of thermal-conductivity substrate 10 is smaller, by thermal-conductivity substrate
10 when being heated to the first temperature, and the temperature of heat-insulated pattern 201 also will increase close to the first temperature, so, evaporation material
The part being located on dottle pin pattern 201 in layer 30 may also can evaporate, so as to cause pattern to be formed in target base plate 40
Part evaporation material can be also deposited in region other than region, reduce the precision of the pattern 401 formed in target base plate 40.It is based on
This, in some embodiments, the coefficient of heat conduction of thermal-conductivity substrate 10 is 20 times~100 times of the coefficient of heat conduction of thermal insulation layer 20.
Exemplary, the coefficient of heat conduction of thermal-conductivity substrate 10 can be 20 times, 30 times, 50 of the coefficient of heat conduction of thermal insulation layer 20
Again, 56 times, 80 times or 100 times etc..
The embodiment of the present invention, due to the coefficient of heat conduction of thermal-conductivity substrate 10 is thermal insulation layer 20 20 times of the coefficient of heat conduction~
100 times, the coefficient of heat conduction difference of the coefficient of heat conduction of thermal-conductivity substrate 10 and thermal insulation layer 20 it is larger, thus by thermal-conductivity substrate 10
When being heated to the first temperature, the first temperature is far not achieved in the temperature of heat-insulated pattern 201, so, avoids evaporation material layer
The evaporation material evaporation being located on heat-insulated pattern 201 in 30, ensures that the essence of the pattern 401 formed in target base plate 40
Degree.
In some embodiments, the thickness of thermal insulation layer 20 is greater than the thickness of thermal-conductivity substrate 10.
In the embodiment of the present invention, since the thickness of thermal insulation layer 20 is greater than the thickness of thermal-conductivity substrate 10, thus by thermally conductive base
When bottom 10 is heated to the first temperature, the temperature of conduction to heat-insulated surface of the pattern 201 far from thermal-conductivity substrate 10 can be reduced, is prevented
The evaporation material evaporation being located on heat-insulated pattern 201 in evaporation material layer 30.
It herein, can be according to the coefficient of heat conduction of thermal-conductivity substrate 10, the coefficient of heat conduction of thermal insulation layer 20 and the first temperature
Etc. come the thickness that determines thermal insulation layer 20.
In view of if the thickness of thermal insulation layer 20 is too small, when thermal-conductivity substrate 10 is heated to the first temperature, thermal-conductivity substrate
Heat on 10 may be conducted by heat-insulated pattern 201 to heat-insulated surface of the pattern 201 far from thermal-conductivity substrate 10, cause to be deposited
The evaporation material evaporation being located on heat-insulated pattern 201 in material layer 30, alternatively, the heat in thermal-conductivity substrate 10 may pass through sky
Gas is conducted to the evaporation material being located on heat-insulated pattern 201, leads to the steaming being located on heat-insulated pattern 201 in evaporation material layer 30
Plate material evaporation.And if the thickness of thermal insulation layer 20 is too big, when being patterned to form heat-insulated pattern 201 to thermal insulation layer 20, can increase
Add composition difficulty.
Based on this, in some embodiments, thermal insulation layer 20 with a thickness of 20 μm~50 μm.
Exemplary, the thickness of thermal insulation layer 20 can be 20 μm, 30 μm, 40 μm or 50 μm etc..
In some embodiments, thermal-conductivity substrate 10 with a thickness of 20 μm~50 μm.
Exemplary, the thickness of thermal-conductivity substrate 10 can be 20 μm, 30 μm, 40 μm or 50 μm etc..
In some embodiments, as shown in figure 3, being formed before thermal insulation layer 20 in thermal-conductivity substrate 10, the system of above-mentioned pattern
Preparation Method further include:
Thermal-conductivity substrate 10 is formed on bearing substrate 100.
Thermal-conductivity substrate 10 provided in an embodiment of the present invention can be heat-conducting substrate, or thermally conductive film layer.In thermally conductive base
Bottom 10 be heat-conducting substrate in the case where, on bearing substrate 100 formed thermal-conductivity substrate 10 include: by heat-conducting substrate using glue or its
Its fixing piece is fixed on bearing substrate 100.In the case where thermal-conductivity substrate 10 is thermally conductive film layer, the shape on bearing substrate 100
It include: that thermally conductive film layer is formed on bearing substrate 100 using the methods of deposition or coating at thermal-conductivity substrate 10.
Herein, bearing substrate 100 for example can be glass substrate (Glass).
The embodiment of the present invention forms before thermal insulation layer 20 in thermal-conductivity substrate 10, forms thermally conductive base on bearing substrate 100
Bottom 10.Since the preparation method of pattern provided in an embodiment of the present invention includes bearing substrate 100, thus can be in bearing substrate
Alignment mark pattern is formed on 100.So, after forming thermal insulation layer 20 in thermal-conductivity substrate 10, structure is carried out to thermal insulation layer 20
When figure is at heat-insulated pattern 201, alignment mark pattern on mask plate can with the alignment mark pattern on bearing substrate 100 into
Row contraposition, it is ensured that form heat-insulated pattern 201 in presumptive area.
On this basis, the case where formation thermal-conductivity substrate 10 on bearing substrate 100, thermal-conductivity substrate 10 is heat-conducting substrate
Under, in some embodiments, after S101, before S104, the preparation method of above-mentioned pattern further include:
Remove bearing substrate 100.
Herein, in the case where bearing substrate 100 and thermal-conductivity substrate 10 are fixed together by glue, it can use laser photograph
Bearing substrate 100 is penetrated, separates bearing substrate 100 with thermal-conductivity substrate 10, to remove bearing substrate 100.
Furthermore, it is possible to before S102, remove bearing substrate 100 after S101.Can also after S102, S103 it
Before, remove bearing substrate 100.Certainly bearing substrate 100 can also be removed after S103, before S104.
The embodiment of the present invention, due to removing bearing substrate 100 before thermal-conductivity substrate 10 is heated to the first temperature, because
And when being heated to thermal-conductivity substrate 10, heat can be directly passed to thermal-conductivity substrate 10, avoid heat by bearing substrate
100 are transmitted to thermal-conductivity substrate 10, cause the loss of partial heat.
In some embodiments, the mistake of pattern is formed in target base plate 40 using the preparation method of the pattern of above-mentioned offer
Journey carries out in a vacuum.
The embodiment of the present invention also provides a kind of preparation method of display base plate, as shown in figure 9, above-mentioned target base plate 40 is wrapped
Include the bottom plate 11 set gradually, multiple first electrodes 12 and pixel defining layer 13；Pixel defining layer 13 includes multiple open regions,
Expose a first electrode 12 in each open region；Target base plate 40 includes the first sub-pix, the second sub-pix and third sub-pix.
In some embodiments, bottom plate 11 is the underlay substrate for being not provided with any electronic component.In further embodiments,
As shown in Figure 10, bottom plate 11 includes underlay substrate 110 and 111 He of thin film transistor (TFT) being successively set on underlay substrate 110
Flatness layer 112.Thin film transistor (TFT) 111 includes source electrode, drain electrode, active layer, grid and gate insulation layer.Each first electrode 12 is worn
The via hole crossed on flatness layer 112 is electrically connected with the drain electrode of thin film transistor (TFT) 111.
Herein, the first sub-pix, the second sub-pix and third sub-pix and red sub-pixel (R), green sub-pixels (G) and
Blue subpixels (B) correspond.
The preparation method of display base plate provided in an embodiment of the present invention, comprising:
Preparation method using above-mentioned pattern is successively as shown in figure 11, in the opening of the first sub-pix of target base plate 40
Area formed the first luminous pattern (Electro-Luminescence, abbreviation EL) 14, as shown in figure 12, in opening for the second sub-pix
Mouth region formed the second luminous pattern 15, as shown in figure 13, third sub-pix open region formed third luminous pattern 16.
In the case where the open region of the first sub-pix forms the first luminous pattern 14, pattern to be formed in target base plate 40
Region be the first sub-pix open region, evaporation material layer 30 be the first evaporation material layer；In the open region of the second sub-pix
In the case where forming the second luminous pattern 15, the region of pattern to be formed is the open region of the second sub-pix in target base plate 40,
Evaporation material layer 30 is the second evaporation material layer；In the case where the open region of third sub-pix forms third luminous pattern 16,
The region of pattern to be formed is the open region of third sub-pix in target base plate 40, and evaporation material layer 30 is third evaporation material
Layer.
For example, the first luminous pattern 14 is emitting red light pattern in the case where the first sub-pix is red sub-pixel,
In the case that second sub-pix is green sub-pixels, the second luminous pattern 15 is green emitting pattern, is indigo plant in third sub-pix
In the case where color sub-pix, third luminous pattern 16 is blue-light-emitting pattern.
In another example the first luminous pattern 14 is green emitting pattern in the case where the first sub-pix is green sub-pixels,
In the case where the second sub-pix is blue subpixels, the second luminous pattern 15 is blue-light-emitting pattern, is in third sub-pix
In the case where red sub-pixel, third luminous pattern 16 is emitting red light pattern.
Herein, forming the first luminous pattern 14 in the open region of the first sub-pix of target base plate 40 includes:
S200, thermal insulation layer 20 is formed in thermal-conductivity substrate 10；The coefficient of heat conduction of thermal-conductivity substrate 10 is greater than thermal insulation layer 20
The coefficient of heat conduction.
S201, thermal insulation layer 20 is patterned to form the first heat-insulated pattern；First heat-insulated pattern includes the first vacancy section.
S202, the first evaporation material layer is formed far from the side of thermal-conductivity substrate 10 in the first heat-insulated pattern.
S203, by the one of the pattern to be formed of target base plate 40 facing towards the first evaporation material layer, and make target base plate 40
The vacancy section face of the open region of upper first sub-pix and the first heat-insulated pattern.
S204, thermal-conductivity substrate 10 is heated to the first temperature, the first temperature is greater than or equal to the steaming of the first evaporation material layer
Send out temperature；Evaporation material in first evaporation material layer positioned at the first heat-insulated pattern vacancy section is evaporated to first in target base plate 40
The open region of sub-pix forms the first luminous pattern 14 with the open region of first sub-pix in target base plate 40.
The second luminous pattern 15 is formed in the open region of the second sub-pix of target base plate 40, comprising:
S300, thermal insulation layer 20 is formed in thermal-conductivity substrate 10；The coefficient of heat conduction of thermal-conductivity substrate 10 is greater than thermal insulation layer 20
The coefficient of heat conduction.
S301, thermal insulation layer 20 is patterned to form the second heat-insulated pattern；Second heat-insulated pattern includes the second vacancy section.
S302, the second evaporation material layer is formed far from the side of thermal-conductivity substrate 10 in the second heat-insulated pattern.
S303, by the one of the pattern to be formed of target base plate 40 facing towards the second evaporation material layer, and make target base plate 40
The vacancy section face of the open region of upper second sub-pix and the second heat-insulated pattern.
S304, thermal-conductivity substrate 10 is heated to the first temperature, the first temperature is greater than or equal to the steaming of the second evaporation material layer
Send out temperature；Evaporation material in second evaporation material layer positioned at the second heat-insulated pattern vacancy section is evaporated to second in target base plate 40
The open region of sub-pix forms the second luminous pattern 15 with the open region of second sub-pix in target base plate 40.
Third luminous pattern 16 is formed in the open region of the third sub-pix of target base plate 40, comprising:
S400, thermal insulation layer 20 is formed in thermal-conductivity substrate 10；The coefficient of heat conduction of thermal-conductivity substrate 10 is greater than thermal insulation layer 20
The coefficient of heat conduction.
S401, thermal insulation layer 20 is patterned to form the heat-insulated pattern of third；The heat-insulated pattern of third includes third vacancy section.
S402, third evaporation material layer is formed far from the side of thermal-conductivity substrate 10 in the heat-insulated pattern of third.
S403, by the one of the pattern to be formed of target base plate 40 facing towards third evaporation material layer, and make target base plate 40
The open region of upper third sub-pix and the vacancy section face of the heat-insulated pattern of third.
S404, thermal-conductivity substrate 10 is heated to the first temperature, the first temperature is greater than or equal to the steaming of third evaporation material layer
Send out temperature；Evaporation material in third evaporation material layer positioned at the heat-insulated pattern vacancy section of third is evaporated to third in target base plate 40
The open region of sub-pix forms third luminous pattern 16 with the open region of the third sub-pix in target base plate 40.
The embodiment of the present invention provides a kind of preparation method of display base plate, using the preparation method of above-mentioned pattern in target
The open region of first sub-pix of substrate 40 forms the first luminous pattern 14, shines in the open region of the second sub-pix formation second
Pattern 15 and third sub-pix open region formed third luminous pattern 16 when, do not need directly steam using FMM
The first luminous pattern 14, second hair for plating the first luminous pattern 14, the second luminous pattern 15 and third luminous pattern 16, and being formed
The precision of light pattern 15 and third luminous pattern 16 is higher.The display base plate of preparation can be applied in large scale display device, micro-
In type display device or the display device of high PPI.
On this basis, in the related technology in order to solve the first luminous pattern 14, the second luminous pattern 15 and the of preparation
The lower problem of three luminous patterns, 16 precision forms flood luminescent layer in first electrode 12, is emitted white light combination using luminescent layer
The scheme of chromatic filter layer (Color Filter, abbreviation CF).And the transmitance of colored filter only has 25%, thus luminescent layer
The light of sending can reduce the brightness of light when passing through colored filter.In the embodiment of the present invention, in the open region shape of the first sub-pix
The second luminous pattern 15 is formed at the first luminous pattern 14, in the open region of the second sub-pix and in the opening of third sub-pix
Area forms third luminous pattern 16, and the first luminous pattern 14 can directly send out the first color of light, and the second luminous pattern 15 can be straight
The second color of light of sending and receiving, third luminous pattern 16 can directly send out third color of light, thus no longer need to production CF, so as to avoid
The loss of light efficiency facilitates the promotion of light efficiency, to improve the bright of display device when display base plate is applied to display device
Degree.
The first luminous pattern 14 is formed, in the opening of the second sub-pix in the open region of the first sub-pix of target base plate 40
Area forms the second luminous pattern 15, after the open region of third sub-pix forms third luminous pattern 16, the system of display base plate
Preparation Method further include: as shown in figure 14, form the second electrode lay 17.
Herein, can be first electrode 12 is anode, and the second electrode lay 17 is cathode；It is also possible to first electrode 12 for yin
Pole, the second electrode lay 17 are anode.
Above-mentioned display base plate can be applied in organic electroluminescence display device and method of manufacturing same, in the case, the first illuminated diagram
Case 14, the second luminous pattern 15, third luminous pattern 16 are organic light emission pattern.Above-mentioned display base plate can also be applied to
In quanta point electroluminescent display device (Quantum Dot Light Emitting Diodes, abbreviation QLED), in this situation
Under, the first luminous pattern 14, the second luminous pattern 15, third luminous pattern 16 are quantum dot light emitting pattern.
It will be understood by those skilled in the art that using the preparation method of above-mentioned pattern in addition to above-mentioned display base can be prepared
Outside the first luminous pattern 14, the second luminous pattern 15 and third luminous pattern 16 in plate, above-mentioned pattern can also be utilized
Preparation method prepare other patterns, will not enumerate herein.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be with the scope of protection of the claims
It is quasi-.
Claims (10)
1. a kind of preparation method of pattern characterized by comprising
Thermal insulation layer is formed in thermal-conductivity substrate；The coefficient of heat conduction of the thermal-conductivity substrate is greater than the heat transfer system of the thermal insulation layer
Number；
The thermal insulation layer is patterned to form heat-insulated pattern；The heat-insulated pattern includes vacancy section；
Evaporation material layer is formed far from the side of the thermal-conductivity substrate in the heat-insulated pattern；
By the one of the pattern to be formed of target base plate facing towards the evaporation material layer, and make figure to be formed in the target base plate
The vacancy section face in the region of case and the heat-insulated pattern；
The thermal-conductivity substrate is heated to the first temperature, first temperature is greater than or equal to the evaporation temperature of the evaporation material layer
Degree；Evaporation material in the evaporation material floor positioned at the vacancy section is evaporated to the area of pattern to be formed in the target base plate
Domain forms pattern with the region of pattern to be formed in the target base plate.
2. the preparation method of pattern according to claim 1, which is characterized in that by the one of the pattern to be formed of target base plate
Facing towards the evaporation material layer, comprising:
By the one of the pattern to be formed of the target base plate facing towards the evaporation material layer, and the target base plate is moved, made
The target base plate is contacted with the evaporation material layer.
3. the preparation method of pattern according to claim 1, which is characterized in that the coefficient of heat conduction of the thermal-conductivity substrate is
20 times of the coefficient of heat conduction of the thermal insulation layer~100 times.
4. the preparation method of pattern according to claim 1, which is characterized in that the thickness of the thermal insulation layer is greater than described lead
The thickness of hot substrate.
5. the preparation method of pattern according to claim 4, which is characterized in that the thermal insulation layer with a thickness of 20 μm~50
μm；
And/or the thermal-conductivity substrate with a thickness of 20 μm~50 μm.
6. the preparation method of pattern according to claim 1, which is characterized in that described to form thermal insulation layer in thermal-conductivity substrate
Before, the preparation method of the pattern further include:
The thermal-conductivity substrate is formed on bearing substrate；The thermal-conductivity substrate is heat-conducting substrate or thermally conductive film layer.
7. the preparation method of pattern according to claim 6, which is characterized in that in the thermal-conductivity substrate be heat-conducting substrate
In the case of,
The thermal insulation layer is patterned after forming heat-insulated pattern, before the thermal-conductivity substrate is heated to the first temperature, institute
State the preparation method of pattern further include:
Remove the bearing substrate.
8. the preparation method of pattern according to claim 1, which is characterized in that the material of the thermal-conductivity substrate be silver, copper,
One of gold, aluminium are a variety of.
9. the preparation method of pattern according to claim 1, which is characterized in that the material of the thermal insulation layer is titanium dioxide
Silicon.
10. a kind of preparation method of display base plate, which is characterized in that target base plate includes the bottom plate set gradually, multiple first
Electrode and pixel defining layer；The pixel defining layer includes multiple open regions, and each open region exposes one described the
One electrode；The target base plate includes the first sub-pix, the second sub-pix and third sub-pix；
The preparation method of the display base plate includes:
Using the preparation method of the described in any item patterns of claim 1-9 successively in the target base plate as described in it is first sub-
The open region of pixel forms the first luminous pattern, forms the second luminous pattern, described in the open region of second sub-pix
The open region of third sub-pix forms third luminous pattern；
Wherein, in the case where the open region of first sub-pix forms the first luminous pattern, to shape in the target base plate
Region at pattern is the open region of first sub-pix, and evaporation material layer is the first evaporation material layer；It is sub- described second
In the case that the open region of pixel forms the second luminous pattern, the region of pattern to be formed is described second in the target base plate
The open region of sub-pix, evaporation material layer are the second evaporation material layer；Third hair is formed in the open region of the third sub-pix
In the case where light pattern, the region of pattern to be formed is the open region of the third sub-pix in the target base plate, and material is deposited
The bed of material is third evaporation material layer.
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