CN105336763A - Light-emitting displayer and manufacturing method thereof - Google Patents
Light-emitting displayer and manufacturing method thereof Download PDFInfo
- Publication number
- CN105336763A CN105336763A CN201510848844.6A CN201510848844A CN105336763A CN 105336763 A CN105336763 A CN 105336763A CN 201510848844 A CN201510848844 A CN 201510848844A CN 105336763 A CN105336763 A CN 105336763A
- Authority
- CN
- China
- Prior art keywords
- layer
- pixel
- tft
- hole
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention is applicable to the technical field of display and provides a light-emitting displayer and a manufacturing method thereof. The light-emitting displayer comprises a TFT array substrate, wherein the TFT array substrate comprises a substrate body, a TFT array, a passivation layer and a flat layer sequentially arranged from bottom to top, the TFT array comprises multiple TFT, each TFT comprises a source/drain electrode and a grid electrode, sub-pixel pits are formed in the flat layer, and the depth of each sub-pixel pit is smaller than the thickness of the flat layer. The flat layer and the passivation layer under a sub-pixel pit area are provided with through holes communicated with the source/drain electrodes. Pixel electrodes and light-emitting unit middle functional layers are sequentially arranged in the sub-pixel pits, top electrodes are arranged on the light-emitting unit middle functional layers, and the pixel electrodes are connected with the source/drain electrodes through the through holes.
Description
Technical field
The invention belongs to Display Technique field, particularly relate to a kind of active display and preparation method thereof.
Background technology
In the present age of information-intensive society, as the importance of the display device of visual information transmission medium in further reinforcement, in order at following dominate, display device just towards gentlier, the trend development of thinner, more low energy consumption, more low cost and better picture quality.
Due to organic electroluminescent LED (OLED) there is self-luminous, reaction is fast, visual angle is wide, brightness is high, the advantage such as frivolous; And light emitting diode with quantum dots (QLED) has advantages such as photochromic purity is high, luminous quantum efficiency is high, glow color is easily adjusted, long service life, OLED and QLED becomes two Main way of current display device research.
Drive TFT array is an important component part of OLED and QLED display.At present, the preparation process of display device is generally: after tft array completes, dig a hole by first time photoetching process in the source/drain upper end of TFT and expose source/drain, then one deck ITO is deposited, ITO patterning is formed by second time photoetching process the pixel electrode be connected with TFT source/drain subsequently, prepare luminescent device on the pixel electrode.The method manufacturing process is comparatively complicated, in addition, in order to prevent position and the size of the short circuit of ITO pixel electrode neighboring area, simultaneously convenient definition pixel, around ITO pixel electrode, often needs to prepare one deck pixel bank.The making of pixel bank adds additional the preparation technology of device, also increases the thickness of device simultaneously, is unfavorable for the low-cost production of display and frivolous characteristic.
Summary of the invention
The object of the present invention is to provide a kind of active display, being intended to solve existing active display needs to set up pixel bank and causes light-emitting display device frivolous not and the problem that cost is relatively high and preparation method is complicated.
Another object of the present invention is to the preparation method that kind of active display is provided.
The present invention realizes like this, a kind of active display, comprise tft array substrate, described tft array substrate comprises the substrate, tft array, passivation layer and the flatness layer that set gradually from the bottom up, described tft array comprises multiple TFT, described TFT comprises source/drain and grid, described flatness layer offers sub-pixel hole, and the degree of depth in described sub-pixel hole is less than the thickness of described flatness layer; Described flatness layer below region, described sub-pixel hole and described passivation layer offer the through hole communicated with described source/drain; Be disposed with pixel electrode and luminescence unit intermediate functional layer in described sub-pixel hole, described luminescence unit intermediate functional layer is provided with top electrode, and wherein, described pixel electrode is connected with described source/drain by described through hole.
And a kind of preparation method of active display, comprises the following steps:
There is provided TFT substrate, described tft array substrate comprises the substrate, tft array, passivation layer and the flatness layer that set gradually from the bottom up, and described tft array comprises multiple TFT, and described TFT comprises source/drain and grid;
Described TFT substrate deposits photoresistance;
Adopt mask plate to carry out exposure-processed to described photoresistance, described exposure-processed comprises carries out half exposure to the region for making sub-pixel hole, entirely exposes for making the via regions being communicated with described source/drain and described sub-pixel hole above described source/drain;
Development treatment is carried out to the exposure area of described photoresistance, the photoresistance of described full exposure area is removed completely, described half exposure area forms residual light resistance layer;
Dry etching is carried out to the region of described development treatment, makes described flatness layer form sub-pixel hole, described flatness layer and described passivation layer at half exposure area opening and form through hole at full exposure area opening;
In described sub-pixel hole after pixel deposition electrode, remove the described photoresistance without exposure imaging process;
Described pixel electrode makes luminescent device.
Active display provided by the invention, sub-pixel hole is offered using described flatness layer as pixel bank layer, on described flatness layer, the active display obtained thus does not need additionally to arrange pixel bank, make described light-emitting display device more frivolous and cost reduction, there are better market prospects.
The preparation method of active display provided by the invention, exposure-processed is carried out to described photoresistance, wherein, via regions above described TFT source/drain is entirely exposed, carries out half exposure to described pixel electrode area, and then by development, etching processing, on described flatness layer, etching forms described sub-pixel hole and above described source/drain, etches borehole and forms through hole, obtains the active display using described flatness layer as pixel bank layer.The preparation method of active display provided by the invention enormously simplify the manufacture craft of active display, and has saved cost of manufacture.In addition, after the present invention has deposited pixel electrode, peeled off by photoresistance and realize patterned electrodes, the manufacture craft of active display can be further simplify, enhance productivity.
Accompanying drawing explanation
Fig. 1 is the structural representation of the active display that the embodiment of the present invention provides;
Fig. 2 is in the preparation method of the active display that the embodiment of the present invention provides, and deposits the structural representation after photoresistance on the tft substrate;
Fig. 3 is in the preparation method of the active display that the embodiment of the present invention provides, and carries out the structural representation after exposure-processed to photoresistance;
Fig. 4 is in the preparation method of the active display that the embodiment of the present invention provides, and carries out the structural representation after development treatment to the exposure area of photoresistance;
Fig. 5 is in the preparation method of the active display that the embodiment of the present invention provides, the structural representation in sub-pixel hole after pixel deposition electrode;
Fig. 6 is in the preparation method of the active display that the embodiment of the present invention provides, and removes the structural representation after without the photoresistance of exposure imaging process.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
By reference to the accompanying drawings 1, embodiments provide a kind of active display, comprise tft array substrate 1, described tft array substrate 1 comprises the substrate 11, tft array, passivation layer 13 and the flatness layer 14 that set gradually from the bottom up, described tft array comprises multiple TFT12, described TFT12 comprises source/drain 121 and grid (not marking in figure), described flatness layer 14 offers sub-pixel hole 2, and the degree of depth in described sub-pixel hole 2 is less than the thickness of described flatness layer 14; Described sub-pixel cheats described flatness layer 14 below 2 regions and described passivation layer 13 offers the through hole 3 communicated with described source/drain 121; Be disposed with pixel electrode 41 and luminescence unit intermediate functional layer 42 in described sub-pixel hole 2, described luminescence unit intermediate functional layer 42 is provided with top electrode 43, and wherein, described pixel electrode 41 is connected with described source/drain 121 by described through hole 2.
Concrete, in the embodiment of the present invention, described tft array substrate 1 has the structure of the conventional tft array substrate in this area, both the substrate 11, tft array, passivation layer 13 and the flatness layer 14 that set gradually from the bottom up had been comprised, described tft array comprises multiple TFT12, and described TFT12 comprises source/drain 121 and grid (not marking in figure).Wherein, described substrate 11 can be hard substrate or flexible base, board, and wherein, described hard substrate can be glass.As specific embodiment, described TFT12 is the one in non-crystalline silicon tft, multi-crystal TFT or metal oxide TFT; Wherein, described multi-crystal TFT comprises low temperature polycrystalline silicon TFT and high temperature polysilicon TFT.
In the embodiment of the present invention, described sub-pixel hole 2 is formed in described flatness layer 14, and the degree of depth in described sub-pixel hole 2 is less than the thickness of described flatness layer 14.Concrete, the degree of depth in described sub-pixel hole 2 is determined with the thickness of the reflecting unit made.As preferred embodiment, the degree of depth in described sub-pixel hole 2 is 1-3 μm.The thickness of described flatness layer 14 does not have clear and definite restriction, and owing to described flatness layer 14 needing formed described sub-pixel hole 2, therefore, the thickness of described flatness layer 14 arranges than usually not as the thick 3-5 μm of the flatness layer thickness of pixel bank layer.
In the embodiment of the present invention, in described sub-pixel hole 2, deposit pixel electrode 41, described pixel electrode 41 is filled described through hole 3 and is communicated with described source/drain 121.Described pixel electrode 41 is transparency electrode or metal electrode, and wherein, described transparency electrode comprises conducting metal oxide.
Described luminescence unit intermediate functional layer 42 comprises luminescent layer.Described luminescent layer is made up of at least one in luminous organic material or phosphor, correspondingly thus obtains OLED or QLED.In order to improve charge migration efficiency, described luminescence unit intermediate functional layer 42 also comprises at least one deck in electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.As preferred embodiment, described luminescence unit intermediate functional layer 42 comprises electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.
Described luminescence unit intermediate functional layer 42 is provided with top electrode 43, and described top electrode 43 can only be arranged on described luminescence unit intermediate functional layer 42; Also in the mode of flood deposition, described luminescence unit intermediate functional layer 42 can be arranged on and not offer on the described flatness layer 14 in described sub-pixel hole 2.
In the embodiment of the present invention, described pixel electrode 41, described luminescence unit intermediate functional layer 42 and described top electrode 43 form luminescence unit 4 jointly.
The active display that the embodiment of the present invention provides, sub-pixel hole is offered using described flatness layer as pixel bank layer, on described flatness layer, the active display obtained thus does not need additionally to arrange pixel bank, make described light-emitting display device more frivolous and cost reduction, there are better market prospects.
Active display described in the embodiment of the present invention, can be prepared by following method, certainly, also can be prepared by additive method.
Correspondingly, composition graphs 1-6, the embodiment of the present invention additionally provides a kind of preparation method of active display, comprises the following steps:
S01. provide TFT substrate 1, described tft array substrate 1 comprises the substrate 11, tft array, passivation layer 13 and the flatness layer 14 that set gradually from the bottom up, and described tft array comprises multiple TFT12, and described TFT12 comprises source/drain 121 and grid;
S02. in described TFT substrate 1, photoresistance 5 is deposited;
S03. adopt mask plate to carry out exposure-processed to described photoresistance 5, described exposure-processed comprises carries out half exposure to the region for making sub-pixel hole 2, entirely exposes for making through hole 3 region being communicated with described source/drain 121 and described sub-pixel hole 2 above described source/drain 121;
S04. development treatment is carried out to the exposure area of described photoresistance 5, the photoresistance of described full exposure area is removed completely, described half exposure area forms residual light resistance layer 51;
S05. dry etching is carried out to the region of described development treatment, make described flatness layer 14 form sub-pixel hole 2, described flatness layer 14 and described passivation layer 13 at half exposure area opening and form through hole 3 at full exposure area opening;
S06. in described sub-pixel hole 2, after pixel deposition electrode 41, the described photoresistance 5 without exposure imaging process is removed;
S07. on described pixel electrode 41, luminescent device is made.
Concrete, in above-mentioned steps S01, the TFT substrate structure that described TFT substrate 1 uses containing this area routine, concrete, comprise the substrate 11, tft array, passivation layer 13 and the flatness layer 14 that set gradually from the bottom up, described tft array comprises multiple TFT12, and described TFT12 comprises source/drain 121 and grid.
In above-mentioned steps S02, the method that described TFT substrate 1 deposits photoresistance 5 is unrestricted, and this area conventional deposition method can be adopted to realize.
As shown in Figure 2, in above-mentioned steps S03, mask plate (not marking in figure) is adopted to carry out exposure-processed to described photoresistance 5, described mask plate comprises full exposed portion (complete openwork part) and half exposed portion, and described half exposed portion can realize by arranging tiny aperture at described mask plate respective regions.In the embodiment of the present invention, described exposure-processed comprises carries out half exposure to the region for making sub-pixel hole 2, entirely exposes for making through hole 3 region being communicated with described source/drain 121 and described sub-pixel hole 2 above described source/drain 121.
In above-mentioned steps S04, as shown in Figure 3, through described development treatment, the photoresistance of described full exposure area is removed completely, and described half exposure area forms the very thin residual light resistance layer 51 of one deck, and the photoresistance thickness of unexposed processing region does not change.
In above-mentioned steps S05, as shown in Figure 4, in the embodiment of the present invention, dry etching is carried out to the region of described development treatment conventional dry etching technology can be adopted to realize.Through described dry etching, described residual light resistance layer 51 is removed in etching process, and the described flatness layer 14 in this region is partially etched formation groove because losing photoresistance protection, and namely described flatness layer 14 forms sub-pixel hole 2 at half exposure area opening; Meanwhile, described flatness layer 14 and described passivation layer 13 be etched in full exposure area opening formed through hole 3, expose described source/drain 121.
In above-mentioned steps S06, as shown in Figure 5, in described sub-pixel hole 2, the method for pixel deposition electrode 41 is unrestricted, and the conventional method of this area can be adopted to realize.As a specific embodiment, when depositing described pixel electrode 41, adopt the mode of flood deposition, now, described sub-pixel hole 2 and described photoresistance 5 can deposit pixel electrode material simultaneously.After having deposited described pixel electrode 41, peel off the described photoresistance 5 that described flatness layer 14 retains; Meanwhile, the pixel electrode material be deposited on described photoresistance 5 is also stripped, and forms patterned pixel electrode thus, as shown in Figure 6.
In above-mentioned steps S07, as shown in Figure 1, the method described pixel electrode 41 making luminescent device is unrestricted.Concrete, described luminescent device comprises the luminescence unit intermediate functional layer 42 and top electrode 43 that set gradually, and wherein, described luminescence unit intermediate functional layer 42 also comprises at least one deck in electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.As preferred embodiment, described luminescence unit intermediate functional layer 42 comprises electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.Described top electrode 43 can only be arranged on described luminescence unit intermediate functional layer 42; Also in the mode of flood deposition, described luminescence unit intermediate functional layer 42 can be arranged on and not offer on the described flatness layer 14 in described sub-pixel hole 2.In the embodiment of the present invention, described pixel electrode 41, described luminescence unit intermediate functional layer 42 and described top electrode 43 form luminescence unit 4 jointly.Thus, flatness layer 14 described in the embodiment of the present invention is as pixel bank layer.
Further, the embodiment of the present invention also comprises carries out encapsulating process to described active display, and the method for described encapsulating process can adopt this area conventional method to realize.
The preparation method of the active display that the embodiment of the present invention provides, exposure-processed is carried out to described photoresistance, wherein, via regions above described TFT source/drain is entirely exposed, carries out half exposure to described pixel electrode area, and then by development, etching processing, on described flatness layer, etching forms described sub-pixel hole and above described source/drain, etches borehole and forms through hole, obtains the active display using described flatness layer as pixel bank layer.The preparation method of active display provided by the invention enormously simplify the manufacture craft of active display, and has saved cost of manufacture.In addition, after the embodiment of the present invention has deposited pixel electrode, peeled off by photoresistance and realize patterned electrodes, the manufacture craft of active display can be further simplify, enhance productivity.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. an active display, comprises tft array substrate, and described tft array substrate comprises the substrate, tft array, passivation layer and the flatness layer that set gradually from the bottom up, and described tft array comprises multiple TFT, and described TFT comprises source/drain and grid, it is characterized in that,
Described flatness layer offers sub-pixel hole, and the degree of depth in described sub-pixel hole is less than the thickness of described flatness layer;
Described flatness layer below region, described sub-pixel hole and described passivation layer offer the through hole communicated with described source/drain;
Be disposed with pixel electrode and luminescence unit intermediate functional layer in described sub-pixel hole, described luminescence unit intermediate functional layer is provided with top electrode, and wherein, described pixel electrode is connected with described source/drain by described through hole.
2. active display as claimed in claim 1, is characterized in that, the degree of depth in described sub-pixel hole is 1-3 μm.
3. active display as claimed in claim 1 or 2, it is characterized in that, described luminescence unit intermediate functional layer comprises luminescent layer.
4. active display as claimed in claim 3, it is characterized in that, described luminescent layer is made up of at least one in luminous organic material or phosphor.
5. active display as claimed in claim 1 or 2, it is characterized in that, described TFT is the one in non-crystalline silicon tft, multi-crystal TFT or metal oxide TFT.
6. active display as claimed in claim 1 or 2, it is characterized in that, described luminescence unit intermediate functional layer also comprises at least one deck in electron injecting layer, electron transfer layer, hole transmission layer and hole injection layer.
7. active display as claimed in claim 1 or 2, it is characterized in that, described pixel electrode is transparency electrode or metal electrode, and wherein, described transparency electrode comprises conducting metal oxide.
8. a preparation method for active display, comprises the following steps:
There is provided TFT substrate, described tft array substrate comprises the substrate, tft array, passivation layer and the flatness layer that set gradually from the bottom up, and described tft array comprises multiple TFT, and described TFT comprises source/pole and grid;
Described TFT substrate deposits photoresistance;
Adopt mask plate to carry out exposure-processed to described photoresistance, described exposure-processed comprises carries out half exposure to the region for making sub-pixel hole, entirely exposes for making the via regions being communicated with described source/drain and described sub-pixel hole above described source/drain;
Development treatment is carried out to the exposure area of described photoresistance, the photoresistance of described full exposure area is removed completely, described half exposure area forms residual light resistance layer;
Dry etching is carried out to the region of described development treatment, makes described flatness layer form sub-pixel hole, described flatness layer and described passivation layer at half exposure area opening and form through hole at full exposure area opening;
In described sub-pixel hole after pixel deposition electrode, remove the described photoresistance without exposure imaging process;
Described pixel electrode makes luminescent device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510848844.6A CN105336763B (en) | 2015-11-26 | 2015-11-26 | A kind of active display and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510848844.6A CN105336763B (en) | 2015-11-26 | 2015-11-26 | A kind of active display and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105336763A true CN105336763A (en) | 2016-02-17 |
| CN105336763B CN105336763B (en) | 2019-08-02 |
Family
ID=55287182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510848844.6A Active CN105336763B (en) | 2015-11-26 | 2015-11-26 | A kind of active display and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105336763B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108064415A (en) * | 2016-12-27 | 2018-05-22 | 深圳市柔宇科技有限公司 | Array substrate manufacturing method |
| CN109301075A (en) * | 2017-07-25 | 2019-02-01 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
| CN111668381A (en) * | 2020-06-19 | 2020-09-15 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800240A (en) * | 2009-02-06 | 2010-08-11 | 精工爱普生株式会社 | Organnic electroluminescent device, electronic equipment |
| US20130001533A1 (en) * | 2011-06-28 | 2013-01-03 | Samsung Mobile Display Co., Ltd. | Organic light emitting display devices and methods of manufacturing organic light emitting display devices |
| CN103151305A (en) * | 2013-02-28 | 2013-06-12 | 京东方科技集团股份有限公司 | Thin film transistor array substrate, preparing method and display device |
| CN104022138A (en) * | 2013-02-28 | 2014-09-03 | 三星显示有限公司 | Organic light-emitting display apparatus and method of manufacturing same |
| US20150028292A1 (en) * | 2013-07-25 | 2015-01-29 | Samsung Display Co., Ltd. | Organic light-emitting display device and manufacturing method thereof |
-
2015
- 2015-11-26 CN CN201510848844.6A patent/CN105336763B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800240A (en) * | 2009-02-06 | 2010-08-11 | 精工爱普生株式会社 | Organnic electroluminescent device, electronic equipment |
| US20130001533A1 (en) * | 2011-06-28 | 2013-01-03 | Samsung Mobile Display Co., Ltd. | Organic light emitting display devices and methods of manufacturing organic light emitting display devices |
| CN103151305A (en) * | 2013-02-28 | 2013-06-12 | 京东方科技集团股份有限公司 | Thin film transistor array substrate, preparing method and display device |
| CN104022138A (en) * | 2013-02-28 | 2014-09-03 | 三星显示有限公司 | Organic light-emitting display apparatus and method of manufacturing same |
| US20150028292A1 (en) * | 2013-07-25 | 2015-01-29 | Samsung Display Co., Ltd. | Organic light-emitting display device and manufacturing method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108064415A (en) * | 2016-12-27 | 2018-05-22 | 深圳市柔宇科技有限公司 | Array substrate manufacturing method |
| CN109301075A (en) * | 2017-07-25 | 2019-02-01 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
| CN109301075B (en) * | 2017-07-25 | 2020-07-03 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| US11152436B2 (en) | 2017-07-25 | 2021-10-19 | Beijing Boe Display Technology Co., Ltd. | Display panel, fabrication method thereof, and display device |
| CN111668381A (en) * | 2020-06-19 | 2020-09-15 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN111668381B (en) * | 2020-06-19 | 2023-01-24 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105336763B (en) | 2019-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108493228A (en) | Array substrate and its manufacturing method, display panel | |
| KR101322310B1 (en) | Organic light emitting display device and and method for fabricating the same | |
| CN107579102A (en) | Display panel and display device | |
| CN105655346B (en) | Thin-film transistor array base-plate | |
| CN107039491A (en) | Organic light-emitting display device and its manufacture method | |
| CN114759071A (en) | Display substrate, manufacturing method thereof and display device | |
| KR20150061921A (en) | Organic Light Emitting Diode Display Device | |
| CN109904211A (en) | A kind of array substrate, its production method, display panel and display device | |
| CN105027313A (en) | Organic light emitting element, organic light emitting display device, and method of manufacturing the organic light emitting display device | |
| CN105489611A (en) | Printed type light emitting display and manufacturing method therefor | |
| US9679953B2 (en) | WOLED back panel and method of manufacturing the same | |
| CN111063697A (en) | Array substrate, preparation method thereof and display panel | |
| CN105590953A (en) | Organic light-emitting diode display having high aperture ratio and method for manufacturing the same | |
| CN104538351A (en) | Organic light emitting diode array substrate, manufacturing method thereof and display device | |
| CN104752476A (en) | Organic Light Emitting Display Device and Method of Manufacturing the Same | |
| US20210134900A1 (en) | Light emitting substrate and manufacturing method thereof, electronic device | |
| CN110444567A (en) | A kind of array substrate and preparation method thereof | |
| CN109994644A (en) | Organic LED display device | |
| CN106856203A (en) | A kind of top emitting display luminescent device and preparation method thereof | |
| CN109074768A (en) | Display device and electronic device | |
| CN105374852B (en) | A kind of printed form active display and preparation method thereof of no pixel bank | |
| CN105336763A (en) | Light-emitting displayer and manufacturing method thereof | |
| CN109037277A (en) | A kind of preparation method and OLED display panel, display device of OLED display panel | |
| KR20150061920A (en) | Organic Light Emitting Diode Display Device | |
| CN105552103A (en) | Printed light emitting display and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |