KR20150139749A - A donor substrate for depositing an organic layer using joule-heating - Google Patents

Abstract

The present invention provides a method for producing an organic membrane deposition donor substrate using Joule heating, and a donor substrate used therefor. According to the present invention, a donor substrate is provided. A Joule heating conductive layer is formed on the donor substrate, and a wall layer is formed on the Joule heating conductive layer. The wall layer is patterned, and a part of a surface of the Joule heating conductive layer is exposed. An out gassing preventing membrane layer is formed by using an atomic layer depositing method on a part of surfaces of the patterned wall layer and the exposed Joule heat heating conductive layer. When an organic membrane on the donor substrate is deposited on a device substrate by using Joule heating and an organic membrane layer is deposited on the device substrate, an upper surface is produced as an inorganic membrane through an atomic layer depositing method in a structure of a wall layer including an organic membrane formed on the donor substrate, so an electrical field is applied to the donor substrate. Even when heat is transferred to an organic membrane which is a wall layer, occurrence of out gassing of an organic membrane which is a wall layer is effectively prevented, so a decrease in precision of a light-emitting pattern formed on a device pattern is prevented. Pollution of a device substrate is prevented, so an organic electroluminescent device can be stably produced.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a donor substrate and an organic film-

[0001] The present invention relates to a donor substrate for organic electroluminescent devices and a method of manufacturing the same, and more particularly, to a method of manufacturing an organic electroluminescent device using a line heating organic film deposition method, The present invention relates to a donor substrate for organic electroluminescence (OLED) and a method of manufacturing the same, and more particularly, to a donor substrate for organic electroluminescence (OLED) using a row heater capable of preventing unnecessary outgassing of an organic film by a joule heat when an organic film is to be deposited on a donor substrate.

An organic electroluminescent device is an organic electroluminescent device (OLED), which is an organic electroluminescent device that can emit light by overcoming the problem of the light receiving type that requires external light in flat panel display technology.

Such organic EL displays can be driven at a low voltage by making use of three organic phosphor compounds of red, yellow, and blue having self-emission function to produce a display flat panel, thereby achieving an ultra-thin design of the product. It is advantageous in that the configuration of the backlight (backlight device) for dropping the light is not necessary.

Accordingly, such organic EL displays are being applied to various industries as well as electric and electronic fields due to convenience in use and efficiency of produced products. Various methods for producing such organic EL displays have been proposed and used will be.

For example, conventionally, various organic EL display manufacturing methods have been proposed as in the documents (1), (2), (3) and (4).

This is because, as in the above-described document (1), an organic EL display method which enables high-definition patterning has been proposed. As in the documents (2), (3) A variety of methods have been proposed for facilitating the process of manufacturing the display or increasing the precision and resolution of the display.

However, in the conventional organic EL display manufacturing method as described above, it is difficult to easily perform an organic film deposition process on an element substrate and it is difficult to form a thin film having a desired pattern. In recent years, A method similar to the method (5) in which an organic film can be conveniently deposited on an element substrate by using a plurality of LEDs is proposed, thereby making it easier to manufacture an organic EL display.

However, as in the case of the reference (5), a conventional organic EL display manufacturing method using a strip heat generated by applying a power source to a conductive layer has a problem that the organic film 11 of the donor substrate 10 The outgassing occurs in a part of the organic film 11 which is transferred to the organic film 11 constituting the partitions of the donor substrate 10 and is deposited on the element substrate 20 in the process of being deposited on the element substrate 20 There is a problem that the precision of the light emission pattern deposited on the element substrate 20 may be reduced and the element substrate 20 may be contaminated.

(1) Korea registered patent registration No. 10-1308203 (2013.09.06) (2) Korean Patent Registration No. 10-1107841 (Jan. 12, 2012) (3) Korean Patent Registration No. 10-0961343 (May 26, 2010) (4) Korean Patent Registration No. 10-0691310 (Feb. 28, 2007) (5) Korean Registered Patent Registration No. 10-1169002 (July 20, 2012)

DISCLOSURE Technical Problem The present invention has been conceived to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing an organic EL display device in which, when an organic film on a donor substrate is deposited onto an element substrate using line heating, It is possible to effectively prevent the outgassing of the organic film, which is the partition wall layer, from being generated even when the electric field is applied to the donor substrate and heat is transferred to the organic film as the partition wall layer by forming the upper surface of the layer as an inorganic film by the atomic layer deposition method A donor substrate and a method for manufacturing the same are disclosed.

It is another object of the present invention to provide a method of manufacturing an organic light emitting display device, which is capable of preventing outgassing which may occur during deposition of an organic layer on a donor substrate to an element substrate even when an organic film of a donor substrate is deposited on an element substrate, The present invention provides a donor substrate for an organic film barrier using a row heater capable of preventing the degradation of the precision of a light emission pattern formed and preventing the element substrate from being contaminated, thereby manufacturing a stable organic electroluminescent device.

In order to achieve the above object,

A donor substrate is provided, a conductive layer for line heating is formed on the donor substrate, a partition wall layer is formed on the conductive layer for line heating, and the partition wall layer is patterned to form a part of the surface of the conductive layer for line heating And forming an outgassing prevention film layer on the patterned barrier rib layer and the exposed conductive layer for heating by using an atomic layer deposition method on a surface portion of the substrate, ≪ / RTI >

Further, according to the present invention,

A heating conductive layer for heating a wire; A patterned barrier rib layer formed on the heating conductive layer for heating the wire rope and exposing a part of the surface of the heating wire layer for heating the wire rope; And an outgassing prevention layer formed on the exposed part of the heating conductive layer and the partition wall layer. The donor substrate according to claim 1,

The outgassing prevention film is a metal oxide film.

And the metal oxide film is made of aluminum oxide.

And the heat generating conductive layer for heating the row heaters is patterned.

And the patterned heating conductive layer for line heating is aligned with the exposed portion of the patterned barrier rib layer.

The present invention as described above can achieve the following effects.

First, even when the organic film on the donor substrate is deposited on the element substrate by the JICP process to form a light emission pattern, the organic film, which is the partition wall layer of the donor substrate, is heated to minimize the outgoing gas phenomenon So that a stable organic electroluminescent device can be manufactured.

Second, even when an organic film on a donor substrate is deposited on a device substrate through a main heating organic film deposition (JICP) process, outgassing is prevented from occurring in a part of the organic film, which is a partition wall layer, It is possible to improve the precision, prevent unnecessary contamination of the element substrate, and manufacture a stable organic electroluminescent device.

Third, the process of depositing the light emission pattern of the element substrate through the donor substrate can be performed smoothly and efficiently, thereby preventing unnecessary management and maintenance costs from being increased, thereby improving the manufacturing efficiency of the entire organic electroluminescent device A reduction in the overall manufacturing cost can be obtained.

1 is a schematic view showing a process of depositing an organic film layer using a row heating according to a conventional technique.
FIGS. 2A to 2F are views showing a manufacturing process of a donor substrate to which an organic barrier layer is applied using a line heater according to a first embodiment of the present invention.
FIGS. 3A to 3H are views showing a manufacturing process of a donor substrate to which an organic film barrier is applied using a line heater according to a second embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing the present invention, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same or similar components throughout the drawings. In addition, the terms described below are defined in consideration of the functions of the present invention, which may vary depending on the intention or custom of the user, the operator. Therefore, definitions of these terms should be made based on the contents throughout this specification.

Prior to describing the present invention, the present invention has proposed a Joule heating organic film deposition method (JICP process) for securing the efficiency of the organic electroluminescence irradiation manufacturing process. In this JICP process, A method of manufacturing an organic electroluminescent device capable of preventing an outgassing phenomenon that may occur during a process of being deposited on a substrate.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

FIGS. 2A to 2F are views showing a manufacturing process of a donor substrate to which an organic barrier layer is applied by using the line heating according to the first embodiment of the present invention.

Referring to FIG. 2A, a heating conductive layer 110 is formed on a donor substrate 100 such as glass, ceramic, or plastic by depositing a heating conductive layer material.

The step of forming the heat generating conductive layer material 110 on the donor substrate 100 may be performed by known methods such as a low pressure chemical vapor deposition method, an atmospheric pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition (PECVD) method, a sputtering method, Vacuum evaporation or the like. In the present invention, the method of forming the heating conductive layer 110 for row heating is not limited.

The material of the heating conductive layer material 110 for heating the wires may be a metal or a metal alloy. The metal or metal alloy may be, for example, molybdenum (Mo), titanium (Ti), chrome (Cr) or molybdenum tungsten (MoW) And the like.

Referring to FIGS. 2B and 2C, the barrier rib layer 120 is formed on the heating conductive layer 110 over the entire surface of the donor substrate 100.

At this time, the barrier rib layer 120 is formed on the heating conductive layer 110 by a known film forming method as an insulating layer, and a predetermined region of the barrier rib layer 120 is removed to form the barrier rib layer 120, Thereby forming a partition wall pattern 120a having grooves formed therein.

In addition, the process of forming the barrier rib layer pattern 120a by patterning and forming the grooved barrier rib pattern 120a may be performed by a known photolithography process, and the method of forming the groove in the present invention is not limited thereto .

The barrier rib layer 120 is formed of an organic film in consideration of process time, and the organic film may be formed of a polyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin Polyimides resins, unsaturated polyesters resins, poly (phenylenethers) resins, poly (phenylenesulfides) resins, and benzocyclo A material selected from the group consisting of benzocyclobutene (BCB) can be used.

The organic film layer 120 deposited on the barrier layer 120 may be formed by depositing an organic film layer that is not to be transferred due to the evaporation of the heat generated by the application of an electric field, Since the element defect occurs due to the poor deposition of the organic film layer when the string of heat is transmitted, the barrier rib pattern 120a having grooves The barrier rib layer 120 must have a thickness not less than a certain thickness since the organic layer 140 deposited on the barrier rib layer 120 should not transmit jelly.

However, when the barrier rib pattern 120a is used as an inorganic film, it takes a long time for the deposition process or the sputtering process in order to form the barrier rib pattern 120a to have a thickness larger than a predetermined thickness. Therefore, considering the productivity, not.

Accordingly, in this case, if the barrier rib layer 120 is formed of an organic film, the barrier rib layer 120 can be formed by a wet process in a short time, so that the barrier rib layer 120 is formed of an organic film.

If the barrier rib layer 120 is formed as an organic layer, the barrier rib layer 120, which is an organic layer, is also transferred to the barrier rib layer 120. As a result, the organic layer forming the barrier rib layer 120 evaporates and is vaporized, So that defects of the element substrate can be caused.

Therefore, in the present invention, the outgassing prevention film 130 is formed on the entire surface of the donor substrate 100 including the barrier rib pattern 120a, as shown in FIG. 2D.

The outgassing prevention film 130 is formed not only on the barrier rib pattern 120a but also on the heating conductive layer 110 for exposing the upper portion.

Therefore, the outgassing prevention layer 130 should not evaporate even when the strips are transferred, and should be transferred to the device substrate on which the strips are formed to select the material that can be efficiently transferred to the organic layer 140 do.

Aluminum oxide (Al2O3) is preferable as the out-gassing film 130 satisfying the above conditions.

Aluminum oxide is excellent in thermal conductivity, and because it is an inorganic film, it has excellent transmission efficiency of jelly, and out gassing does not occur due to jelly.

It is also a material that can be easily deposited by atomic layer deposition, as described below.

Meanwhile, since the groove formed in the barrier rib layer pattern 120a is a fine pattern having an aspect ratio of about 5: 1, the out-gassing barrier layer 130 may be formed by a general deposition method, When forming by the sputtering method, the chemical vapor deposition method, or the like, the outgassing prevention film 130 is not formed accurately at the bottom edge or the like.

Accordingly, the outgassing prevention film 130 is preferably formed by atomic layer deposition.

Atomic Layer Deposition is a nano thin film deposition technique using the phenomenon of chemically sticking monolayer. By alternately advancing adsorption and substitution of molecules on the surface of the wafer, it is possible to perform layer-by-layer deposition of the atomic layer thickness and to stack the oxides and the metal thin film uniformly with the thinnest thickness as much as possible. And is suitable for uniformly depositing an aluminum oxide film with a thin thickness.

Such an atomic layer deposition method is advantageous in that it can be performed at a low temperature and has a small consumption of material, and can be formed to have a uniform and high film density. When the outgassing prevention film 130 is formed on the donor substrate 100, The outgassing prevention film 130 may be uniformly formed on the edge of the hole formed in the barrier rib pattern 120a. Therefore, when the strip heat is generated, the strips are uniformly transferred to the organic film 140 formed on the organic film 140. Therefore, the organic film 140 evaporated and deposited on the device substrate can be uniformly formed, Thereby realizing a high-precision light emission pattern.

The outgassing prevention film 130 is formed by hard baking the donor substrate 100 in a vacuum for about one hour at a deposition temperature of about 145 to 200 degrees Celsius. This is because, if the temperature is too high, the organic film layer constituting the barrier rib layer 120 evaporates, and if the temperature is too low, the atomic layer deposition process does not proceed properly.

The outgassing prevention layer 130 may be formed to have a thickness of about 10 to about 200 nm so as to be formed on the barrier layer pattern 120a in consideration of the heat transfer to the organic layer 140 formed on the upper portion and the process time. , Preferably 40 nm thick.

If the outgassing prevention film 130 is formed too thick, the process time becomes unnecessarily long and the film is stressed, which is undesirable. When the outgassing prevention film 130 is too thin, the barrier rib pattern 120a is not covered, The organic film vapor evaporated in the pattern 120A diffuses through the outgassing prevention film 130, which is not preferable.

On the other hand, when the outgassing prevention film 130 is provided, it is possible to confirm whether or not outgassing occurs by having a degree of vacuum of 1-2 orders lower than the case where the outgassing prevention film 130 is not provided.

Next, referring to FIG. 2E, a vapor deposition organic layer 140 is formed on the entire surface of the substrate 100 including the heating conductive layer 110 for heating lines.

The method of forming the organic layer 140 is not limited and may be formed through a conventional deposition process, but is preferably formed by a wet process.

For this reason, the organic film layer 140 must be formed by a wet process, thereby reducing the overall process time and process cost.

The wet process for forming the organic layer 120 on the first donor substrate 100 according to the present embodiment is as follows.

First, an organic film material to be formed on the first donor substrate 100 is dissolved in a solvent, and then an organic film solution is formed on the first donor substrate 100 by using a doctor blade method, a spin coating method, a dipping method, Coating.

Next, an organic film layer 140 is formed on the first donor substrate 100 by drying a first donor substrate 100 coated with an organic film solution on a heater.

Here, the organic layer includes a light emitting layer, and may further include at least one of a hole injecting layer, a hole transporting layer, an electron transporting layer, and an electron injecting layer. In the present invention, But is not limited to.

By doing so, the donor substrate 100 to be coated with the organic barrier layer using the row heating according to the first embodiment of the present invention is completed.

2F, after the donor substrate 100 is positioned to face the substrate 200 of the organic electroluminescent device, the electric field is applied to the heating conductive layer 110 for heating the row of the donor substrate 100, .

When the electric field is applied, the heat is generated in the heating conductive layer 110, and the organic film layer 140 formed on the heating conductive layer 110 is evaporated to transfer the element substrate 200 to be deposited do.

In addition, even if the organic film layer constituting the partition wall layer pattern 120a which can be evaporated by the transfer of the strip heat is partially evaporated, it is possible to prevent the organic film layer 120a from being deposited on the element substrate 200 by the outgassing prevention film 130 do.

The electric field application conditions are the same as those used in the organic film layer deposition process using ordinary line heating.

That is, an electric field is applied to the donor substrate through a power applying means, the electric field is in a range of 1 Kw / cm2 to 1,000 Kw / cm2, and the electric field applied to the donor substrate is 1 / 1,000,000-100 Sec. ≪ / RTI >

3A to 3H are views showing a process according to a second embodiment of the present invention.

The second embodiment of the present invention differs from the above-described first embodiment of the present invention in the manufacturing process and structure of the heating conductive layer for heating lines formed on the donor substrate, and the remaining technical points are the same, Only the differences from the first embodiment will be described, and the description of the overlapping portions will be omitted.

The heat generating conductive layer for line heating in the second embodiment of the present invention is patterned and is different from the first embodiment in that it is formed in a pattern corresponding to the pattern of the organic film layer formed on the substrate of the organic electroluminescence device.

Specifically, it is as follows.

3A to 3D, a barrier rib layer 120 is formed over the entire surface of a donor substrate 100 after patterning the heating conductive layer 110a for heating a line on a donor substrate 100. [ The barrier rib layer 220 is formed on the heat generating conductive layer 210a by a film forming method known as an insulating film.

Subsequently, as shown in FIG. 3E, a certain region of the barrier rib layer 120 is removed to form a barrier rib layer pattern 120a having a groove in the barrier rib layer 120. Referring to FIG.

At this time, the formed grooves should be formed by aligning with the pattern of the patterned heating conductive layer 110a formed on the lower side. If the grooves are not aligned with the heating heating conductive layer 110a formed at the lower portion, precise alignment is required since the organic film layer is not uniformly evaporated and formed on the element substrate.

An outgassing prevention film 130 is formed on the entire surface of the donor substrate 120 on which the barrier rib pattern 120a is formed and an organic film layer 140 is formed on the outgassing prevention film 130 to form an organic film barrier donor substrate 100 It completes.

While the present invention has been particularly shown and described with reference to specific embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the spirit or scope of the invention as set forth in the following claims It will be apparent to those of ordinary skill in the art.

Description of the Related Art [0002]
100: donor substrate 110: heating conductive layer for line heating
120, 120a: partition wall layer, partition wall layer pattern
130: Outgassing prevention film 140: Organic film layer
200: element substrate of organic electroluminescent device

Claims (10)

A donor substrate is provided,
A conductive layer for line heating is formed on the donor substrate,
Forming a barrier rib layer on the conductive layer for line heating,
The barrier rib layer is patterned to expose a part of the surface of the conductive layer for line heating,
And forming an outgassing layer on the patterned barrier layer and the exposed electrically conductive layer for thermal heating using an atomic layer deposition method on the surface of the substrate. The method according to claim 1,
Wherein the outgassing prevention film is a metal oxide film. 3. The method of claim 2,
Wherein the metal oxide film is made of aluminum oxide. ≪ RTI ID = 0.0 > 11. < / RTI > The method according to claim 1,
Wherein the heating conductive layer for heating the row heating is patterned. 5. The method of claim 4,
Wherein the patterned heating conductive layer for line heating is aligned with the exposed portion of the patterned barrier rib layer. A heating conductive layer for heating a wire;
A patterned barrier rib layer formed on the heating conductive layer for heating the wire rope and exposing a part of the surface of the heating wire layer for heating the wire rope; And
And an outgassing prevention layer formed on the exposed part of the heating conductive layer and the partition wall layer. The method according to claim 6,
Wherein the outgassing prevention film is a metal oxide film. 8. The method of claim 7,
Wherein the metal oxide film is made of aluminum oxide. 8. The method of claim 7,
Characterized in that the heating conductive layer for heating the row heating is patterned. 10. The method of claim 9,
Wherein the patterned heating conductive layer for line heating is aligned with the exposed portion of the patterned barrier rib layer.

Images