CN111696885B - 基板处理装置及方法、半导体器件的制造方法、存储介质 - Google Patents

基板处理装置及方法、半导体器件的制造方法、存储介质 Download PDF

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CN111696885B
CN111696885B CN201910695187.4A CN201910695187A CN111696885B CN 111696885 B CN111696885 B CN 111696885B CN 201910695187 A CN201910695187 A CN 201910695187A CN 111696885 B CN111696885 B CN 111696885B
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processing apparatus
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CN111696885A (zh
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稻田哲明
大桥直史
松井俊
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Abstract

本发明提供一种基板处理装置及半导体器件的制造方法、存储介质。该基板处理装置包括：金属制的容器，其具有对基板进行处理的处理室；基板载置板，其在所述容器内以能够旋转的方式设置，在上表面以圆周状配置有多个基板载置面；加热部，其加热载置在多个所述基板载置面上的基板；热衰减部，其设置在所述加热部与所述容器之间；气体供给部，其向所述处理室供给气体；以及支承部，其使所述基板载置板旋转。

Description

基板处理装置及方法、半导体器件的制造方法、存储介质
技术领域
本公开涉及基板处理装置及方法、半导体器件的制造方法、存储介质。
背景技术
作为半导体基板处理装置，已知一种旋转型装置，其将多个基板沿周向配置在旋转托盘上，使其基板载置部旋转而将两种气体依次向多个基板供给(参照专利文献1)。在气体供给时，通过加热部加热基板。
现有技术文献
专利文献
专利文献1：日本特开2013-84898
发明内容
在旋转型装置中，处理例如300mm的基板。由于将300mm的基板沿周向配置，因此装置自身变大。因此，作为构成装置的容器的材质使用加工容易的金属。另外，若将300mm基板沿周向配置则重量很大，为了承受其大重量，旋转托盘以金属来支承。
在基板处理时实施加热处理。此时，由于装置的容器或支承旋转托盘的支承部等由金属构成，因此热量蓄积而热膨胀。由此存在发生部件的位置偏移等的可能。
本公开的目的在于解决上述课题，提供一种在旋转型装置中减小热膨胀的影响的技术。
本公开提供如下技术：包括：金属制的容器，其具有对基板进行处理的处理室；基板载置板，其在所述容器内以能够旋转的方式设置，在上表面以圆周状配置有多个基板载置面；加热部，其对载置在多个所述基板载置面上的基板进行加热；热衰减部，其设置在所述加热部与所述容器之间；气体供给部，其向所述处理室供给气体；以及支承部，其使所述基板载置板旋转。
发明效果
根据本公开的基板处理装置及半导体器件的制造方法，能够在旋转型装置中减小热膨胀的影响。
附图说明
图1是本公开实施方式的基板处理装置具有的反应器的横截面概略图。
图2是本公开实施方式的基板处理装置具有的反应器的纵截面概略图，是图1所示的反应器的A-A’线剖视图。
图3是用于说明本公开实施方式的基板支承机构的说明图。
图4是说明金属的吸收率的说明图。
图5是说明本公开实施方式的热衰减部的说明图。
图6是说明本公开实施方式的原料气体供给部的说明图。
图7是说明本公开实施方式的反应气体供给部的说明图。
图8是说明本公开实施方式的第一非活性气体供给部的说明图。
图9是说明本公开实施方式的第二非活性气体供给部的说明图。
图10是说明本公开实施方式的控制器的说明图。
图11是说明本公开实施方式的基板处理工序的流程图。
图12是说明本公开实施方式的基板处理工序的流程图。
附图标记说明如下：
S：基板
200：反应器
206a：第1处理区域
206b：第2处理区域
217：基板载置板
280：加热器
226、293、295、296、297、298：热衰减部
300：控制器(控制部)
具体实施方式
以下参照附图说明本公开的实施方式。
主要参照图1至图10说明作为本实施方式的处理炉的反应器的构成。图1是作为本实施方式的基板处理装置的反应器200的横截面概略图。图2是本实施方式的反应器200的纵截面概略图，是图1所示的反应器的A-A’线剖视图。此外，A-A’线是从A通过容器203的中心并朝向A’的线。
图3是说明基板支承机构的说明图。图4至图5是说明热衰减部的说明图。图6至图9是说明气体供给系统的说明图。图10是说明控制器的图。
说明反应器200的具体构成。
如图1及图2所示，反应器200具有圆筒状的气密容器即容器203。因此作为构成装置容器的材质使用加工容易的金属。另外，若将300mm基板沿周向配置则重量很大，因此，为了承受该大重量，旋转托盘以金属支承。例如由不锈钢(SUS)或铝合金等构成。在容器203内构成进行基板S处理的处理室201。容器203连接有闸阀205，经由闸阀205进行基板S的搬入搬出。
处理室201具有供给处理气体的处理区域206和供给吹扫气体的吹扫区域207。在此，处理区域206和吹扫区域207以圆周状交替配置。例如，按照第1处理区域206a、第1吹扫区域207a、第2处理区域206b及第2吹扫区域207b的顺序配置。如后所述，向第1处理区域206a内供给原料气体，向第2处理区域206b内供给反应气体，另外，向第1吹扫区域207a及第2吹扫区域207b供给非活性气体。由此，根据向各区域内供给的气体，针对基板S实施规定的处理。
吹扫区域207是在空间上分为第1处理区域206a和第2处理区域206b的区域。吹扫区域207的顶部208构成为低于处理区域206的顶部209。在第1吹扫区域207a设置有顶部208a，在第2吹扫区域207b设置有顶部208b。通过使各顶部降低，来提高吹扫区域207的空间压力。通过向该空间供给吹扫气体，从而划分出相邻的处理区域206。此外，吹扫气体还具有去除基板S上的多余气体的作用。
在容器203的中央设有基板载置板217，该基板载置板217例如在容器203的中心具有旋转轴并以旋转自如的方式构成。基板载置板217例如由石英、碳或SiC等材料形成，以消除对基板S造成金属污染的影响。
基板载置板217在容器203内以多张(例如6张)基板S在同一平面上且能够沿旋转方向以同一圆周状配置的方式构成。此处所称的“同一平面”不限于完全的同一平面，只要在从上表面观察基板载置板217时，多片基板S以相互不重叠的方式排列即可。
在基板载置板217表面上的基板S的支承位置设有凹部217b。数量与待处理基板S的张数相同的凹部217b从基板载置板217的中心相互以等间隔(例如60°间隔)配置在同心圆状的位置。此外，在图1中，为了说明方便而省略图示。
各凹部217b例如从基板载置板217的上表面观察为圆形状，从侧面观察为凹形状。优选凹部217b的直径构成为比基板S的直径稍大。在该凹部217b的底部设有基板载置面，通过将基板S载置在凹部内，能够将基板S载置在基板载置面上。在各凹部217b设有多个供后述的销219贯穿的贯穿孔217a。
在容器203中的基板载置板217的下方且在与闸阀205面对的部位设有图3中示出的基板保持机构218。基板保持机构218具有多个销219，该多个销219在搬入/搬出基板S时将基板S顶起并支承基板S的背面。销219为能够延伸的构造，能够收纳在例如基板保持机构218的主体中。在移载基板S时，销219延伸而贯穿贯穿孔217a，并且保持基板S。之后，销219的顶端向下方移动，从而基板S载置在凹部217b中。基板保持机构218例如固定于容器203。基板保持机构218只要是在基板载置时能够将销219插入孔217a中的构成即可，也可以固定在后述的内周凸部282或外周凸部283上。
基板载置板217固定在芯部221。芯部221设置在基板载置板217的中心，具有固定基板载置板217的作用。由于是支承基板载置板217的构造，因此使用能够承重的金属。在芯部221的下方配置有轴222。轴222支承芯部221。
轴222的下部贯穿在容器202底部设置的孔223，由能够与容器203外部气密的容器204覆盖。另外，轴222的下端与旋转部224连接。旋转部224构成为，搭载旋转轴或马达等，能够基于后述的控制器300的指示使基板载置板217旋转。
石英罩225以覆盖芯部221的方式设置。即，石英罩225设置在芯部221与处理室201之间。石英罩225以隔开空间覆盖芯部221的方式构成。在石英罩225中的芯部221侧涂覆有热衰减部226。石英罩225由例如石英或SiC等材料形成，以消除对基板S造成金属污染的影响。热衰减部226的详细说明见后述。将芯部221、轴222、旋转部224、石英罩225合并称为支承部。
在基板载置板217的下方配置有将作为加热部的加热器280内置的加热器单元281。加热器280对载置在基板载置板217上的各基板S进行加热。加热器280沿容器203的形状构成为圆周状。
加热器单元281主要包括：内周凸部282，其设置在容器203的底部上，且设置在容器203的中心侧；外周凸部283，其与加热器280相比配置在外周侧；以及加热器280。内周凸部282、加热器280、外周凸部283以同心圆状配置。在内周凸部282与外周凸部283之间形成空间284。加热器280配置在空间284中。内周凸部282、外周凸部283固定在容器203上，因此也可以认为是容器203的一部分。
在此说明了圆周状的加热器280，但只要能够加热基板S则不限于此，也可以是分割为多个部分的构造。
在内周凸部282的上部且在加热器280侧形成有凸缘282a。窗285由凸缘282a和外周凸部283的上表面支承。窗285为使从加热器280产生的热量透过的材质，例如由石英构成。窗285通过由后述的排气构造286的上部286a和内周凸部282夹持而固定。此时，在窗285与内周凸部282之间及在窗285与上部286a之间设置空间。设置空间的理由如后所述。
加热器280与加热器控制部287连接。加热器280与后述的控制器300电连接，根据控制器300的指示控制向加热器280的供电，进行温度控制。
在容器203的底部设有与空间284连通的非活性气体供给管275。非活性气体供给管275与后述的非活性气体供给部270连接。从非活性气体供给部270供给的非活性气体经由非活性气体供给管275向空间284供给。通过使空间284成为非活性气体环境，能够防止处理气体从窗285附近的间隙等侵入。
在外周凸部283的外周面与容器203的内周面之间配置有金属制的排气构造286。排气构造286具有排气槽288与排气缓冲空间289。排气槽288、排气缓冲空间289沿容器203的形状构成为圆周状。
将排气构造286中的不与外周凸部283接触的部位称为上部286a。如前述所示，上部286a与内周凸部282一起固定窗285。
在本实施方式这样的旋转型基板处理装置中，优选将基板S的高度与排气口设为相同高度或使高度接近。假设在排气口的高度低的情况下，存在在基板载置板的端部产生气体紊流的可能。对此，通过设为相同高度或使高度接近，从而即使在排气口侧的基板边缘部也不会产生紊流。
在本实施方式中，将排气构造286的上端设为与基板载置板217相同的高度。在该情况下，如图2所示，由于上部286a形成从窗285伸出的部分，因此从防止颗粒扩散的观点，在该部分设置石英罩290。假设在没有石英罩290的情况下，存在气体与上部286a接触而使上部286a腐蚀而在处理室201内产生颗粒的可能。在石英罩290与上部286a之间设置空间299。设置空间299的理由如后所述。在此处，石英罩290也称为第一罩或第一石英罩。另外，前述的石英罩225也称为第二罩或第二石英罩。
在排气构造286的底部设置排气口291、排气口292。排气口291主要排出向处理空间206a供给的原料气体和从其上游供给的吹扫气体。排气口292主要排出向处理空间206b供给的反应气体和从其上游供给的吹扫气体。各气体经由排气槽288、排气缓冲空间289从排气口291、排气口292排出。
然而，如前所述，反应器200主要包括容器203及凸状部件等金属制部件和基板载置板217及窗285等非金属部件。所谓非金属部件是不易产生颗粒且耐高温的原材料，例如是石英或SiC、陶瓷。
金属的热膨胀系数显著大于例如石英这样的非金属部件。因此，在加热至规定温度的情况下，发生石英不延伸而仅金属延伸的现象。在本实施方式这样的装置中，存在在石英部件与金属部件之间发生偏移并产生颗粒等的可能。
具体来说，窗285附近的构造存在因内周凸部282、外周凸状部件283的热膨胀而与窗285接触的可能。芯部221存在因芯部221的热膨胀而导致基板载置板217偏移从而在载置基板S时销219与贯穿孔217a接触的可能。由于这些接触等而产生颗粒。
如上所述，在石英部件与金属部件混合的装置中，会因热膨胀差产生多种问题。因此，在本实施方式中，在石英和金属这样热膨胀系数相差很大的部件相邻配置的部分设置热衰减部，以抑制金属部件的热膨胀。
接下来说明热衰减部的详细内容。
在本实施方式中，设有在芯部221的周围设置的热衰减部226、在加热器单元281设置的热衰减部293、295、296、在窗285设置的热衰减部297、在石英罩290设置的热衰减部298。
接下来使用图4、图5说明热衰减部的性质。
各热衰减部构成为针对石英部件在表面涂覆有石英微粒的罩。通过附着石英玻璃的微粒来作为罩，从而在微粒间发生散射的同时进行漫反射，因此热反射性能尤其高。
在石英微粒的涂层例如厚度为200μm左右的情况下，已知针对波长1.0μm至2μm的电磁波反射70％到80％。
图4是表示金属的波长与吸收率的图。例如，针对波长1.0μm的电磁波，不锈钢的吸收率为0.35。另外，针对波长1.6μm的电磁波，铝合金的吸收率为0.4，不锈钢的吸收率为0.2至0.9。
铝合金或不锈钢为大多数基板处理装置使用的材质，可知金属的吸收率在这些波长频带非常高。
将上述反射率与图4的内容对照研究，可知针对由铝合金或不锈钢吸收率高的波长(例如1.0至1.6μm)的电磁波，石英微粒的反射率非常高。
图5是说明电磁波的反射状况的说明图。此外，为了便于说明而省略石英401的电磁波反射率。在图5中，朝向石英401、金属402照射电磁波404、411。在图5的(a)中，由石英微粒构成的热衰减部403涂覆在石英401中的与金属402相对的面上。金属402为没有热衰减部403的状态。图5的(b)为石英401上未涂覆热衰减部的状态。
在照射例如波长为1.0μm的电磁波的情况下，在图5的(a)的构成中，热衰减部403反射电磁波404。若热衰减部403的厚度为200μm左右，则反射大约80％的电磁波407。因此，到达金属的电磁波405衰减至大约20％。金属402被从该热衰减部401中透过的电磁波406加热。
另一方面，如图5的(b)所示，在不具有热衰减部403的情况下，从石英401中透过的电磁波411的一部分作为电磁波413被反射，而基本上没有衰减的电磁波412被金属402吸收。如上所述，图5的(b)中被吸收的能量显著大于图5的(a)，且金属温度也高于图5的(a)。
本实施方式中的各热衰减部使用以上说明的石英微粒涂层，使针对金属制部件的热能衰减。
然而，在相邻的部件为金属的情况下，由于热膨胀系数不同而在石英微粒涂层与金属之间产生偏移，由此可能会变为颗粒。因此，各热衰减部按照下述方式构成。
热衰减部226涂覆在石英罩225的内侧且在加热器280侧。通过热衰减部226使向芯部221的热能衰减。
另外，与芯部221隔着空间相邻设置。石英罩225由石英构成，因此热膨胀系数与由石英微粒构成的热衰减部226相等。另外，由于与芯部221隔着空间相邻设置，因此不受芯部221的热膨胀的影响。因此，不会发生由热膨胀系数的差引起的涂层剥落等。
另外，热衰减部226由于在石英罩225的内侧而不会附着处理气体。因此也不会产生由处理气体引起的腐蚀或由蚀刻等引起的颗粒产生。
通过这样的构成使针对芯部221的热能衰减而抑制热膨胀，从而防止在旋转板217设置的孔217a的位置变化。
热衰减部293涂覆在容器203的底面，热衰减部295涂覆在内周凸部282的空间284侧的面，热衰减部296涂覆在外周凸部283的空间284侧的面。
通过设置热衰减部293、295、296，从而能够使从加热器280针对容器203的底面、内周凸部282、外周凸部283的热能衰减。但是，各热衰减部与容器203等金属部件接触，因此在由于长时间加热而使金属部件被加热了的情况下，存在因热膨胀差而产生颗粒的可能性。对此，在本构造中，热衰减部293设置在加热器单元281中，通过窗285而与处理室201隔开，因此即使在加热器单元281中产生了颗粒等，也能够抑制向处理室201的扩散。
热衰减部297涂覆在窗285的外周面。即，设置在隔着基板载置板217而与处理室201隔开的区域。通过设置在窗285的外周，从而能够使从加热器280对上部286a、内侧凸部282的凸部分的热能衰减。窗285是石英部件，因此热膨胀系数与热衰减部297相等。
此外，上部286a隔着空间299地相邻，因此即使由于长时间加热使得上部286a热量蓄积而膨胀，也不会受到其影响。因此，能够抑制由于热膨胀系数的差导致接触等而发生的涂层剥落等。即使假设由于热量影响等而使热衰减部297劣化变成颗粒，也能够因与处理室201隔开设置而防止向处理室201的扩散。
热衰减部298构成为石英罩290的外周。即，在与处理室201之间设有石英罩290。通过设置在石英罩290的外周，从而能够使从加热器280对上部286a的热能衰减。由于石英罩290是石英部件，因此热膨胀系数与热衰减部297相等。另外，由于与上部286a隔着空间299地相邻，因此即使由于长时间加热而在上部286a蓄积热量并膨胀，也不会受到其影响。因此，能够抑制由热膨胀系数的差引起的涂层剥落等的发生。即使假设由于热量的影响等使得热衰减部297劣化变成颗粒，也能够由于在处理室201之间设有石英罩290而防止向处理室201的扩散。
接下来使用图1、图6说明原料气体供给部240。如图1所示，在容器203的侧方朝向容器203的中心方向插入喷嘴245。喷嘴245配置在第1处理区域206a。图1的B与图6的B连接。喷嘴245与气体供给管241的下游端连接。
在气体供给管241从上游方向依次设有原料气体供给源242、作为流量控制器(流量控制部)的质量流量控制器(MFC)243及作为开闭阀的阀244。
原料气体经由MFC243、阀244、喷嘴245从气体供给管241向第1处理区域206a内供给。
此处所称的“原料气体”是处理气体之一，是成为薄膜形成时的原料的气体。作为构成薄膜的元素，原料气体包含例如钛(Ti)、钽(Ta)、硅(Si)、铪(Hf)、锆(Zr)、钌(Ru)、镍(Ni)及钨(W)中的至少某一种。
具体来说，在本实施方式中，原料气体为例如二氯硅烷(Si2H2Cl2)气。在原料气体的原料常温下为气体的情况下，MFC243为气体用的质量流量控制器。
原料气体供给部(也可以称为第1气体供给系统或原料气体供给部。)240主要由气体供给管241、MFC243、阀244、喷嘴245构成。此外，也可以考虑将原料气体供给源242包含在原料气体供给部240中。
接下来使用图1、图7说明原料气体供给部250。如图1所示，在容器203的侧方朝向容器203的中心方向插入喷嘴255。喷嘴255配置在第2处理区域206b。图1的C与图7的C连接。
喷嘴255与气体供给管251连接。在气体供给管251从上游方向依次设有反应气体供给源252、作为流量控制器(流量控制部)的MFC253及作为开闭阀的阀254。
反应气体经由MFC253、阀254、喷嘴255从反应气体供给源252向第2处理区域206b内供给。
此处所称的“反应气体”是处理气体之一，是与由原料气体形成在基板S上的第1层反应的气体。反应气体为例如氨(NH3)气、氮(N2)气、氢(H2)气及氧(O2)气中的至少某一种。在此，反应气体为例如氨气。
反应气体供给部(第2气体供给部)250主要由气体供给管251、MFC253、阀254、喷嘴255构成。此外，也可以考虑将反应气体供给源252包含在反应气体供给部250中。
接下来使用图1、图8说明第1非活性气体供给部260。如图1所示，在容器203的侧方朝向容器203的中心方向插入喷嘴265、喷嘴266。喷嘴265为插入第1吹扫区域207a的喷嘴。例如固定在第1吹扫区域207a的顶部208a。喷嘴266为插入第1吹扫区域207b的喷嘴。例如固定在第1吹扫区域207b的顶部208b。
图1的D与图8的D连接。喷嘴265、喷嘴266与非活性气体供给管261的下游端连接。在非活性气体供给管261从上游方向依次设有非活性气体供给源262、MFC263及阀264。非活性气体经由MFC263、阀264、喷嘴265及喷嘴266从非活性气体供给管261分别向第1吹扫区域207a内及第2吹扫区域207b内供给。向第1吹扫区域207a内及向第2吹扫区域207b内供给的非活性气体作为吹扫气体发挥作用。
第1非活性气体供给部主要由非活性气体供给管261、MFC263、阀264、喷嘴265、喷嘴266构成。此外，也可以考虑将非活性气体供给源262包含在第1非活性气体供给部内。
接下来使用图2、图9说明第2非活性气体供给部270。
图2的E与图9的E连接。非活性气体供给管275与非活性气体供给管271的下游端连接。在非活性气体供给管271从上游方向依次设有非活性气体供给源272、MFC273及阀274。非活性气体经由MFC273、阀274、非活性气体供给管275而从非活性气体供给管271向空间284、容器204供给。
供给至容器204的非活性气体经由旋转托盘217与窗285之间的空间而从排气槽288排出。通过设为这样的构造，从而防止原料气体或反应气体绕回旋转托盘217与窗285之间的空间。进而，即使由于上部286a的热膨胀而使上部286a与热衰减部297、热衰减部298接触并产生了颗粒，也能够从排气槽288排出而避免颗粒进入处理室201。
第2非活性气体供给部270主要由非活性气体供给管271、MFC273、阀274、非活性气体供给管275构成。此外，也可以考虑将非活性气体供给源272包含在第2非活性气体供给部270中。
在此，“非活性气体”为例如氮(N2)气、氦(He)气、氖(Ne)气、氩(Ar)气等稀有气体中的至少某一种。在此，非活性气体为例如N2气。
如图1所示，容器203设置排气口291、排气口292。排气口291设置在处理区域206a的旋转方向下游侧。主要排出原料气体和非活性气体。
以与排气口291连通的方式，设有作为排气部234的一部分的排气管234a。排气管234a构成为，经由作为开闭阀的阀234d、作为压力调节器(压力调节部)的APC(AutoPressure Controller：自动压力控制)阀234c与作为真空排气装置的真空泵234b连接，能够进行真空排气以使得处理室201内的压力达到规定的压力(真空度)。
将排气管234a、阀234d、APC阀234c合并称为排气部234。此外，也可以将真空泵234b包含在排气部234中。
另外，如图1、图2所示，以与排气口292连通的方式设置排气部235。排气口292设置在处理区域206b的旋转方向下游侧。主要排出反应气体和非活性气体。
以与排气口292连通的方式，设置作为排气部235的一部分的排气管235a。排气管235a构成为，经由作为开闭阀的阀235d、作为压力调节器(压力调节部)的APC阀235c与作为真空排气装置的真空泵235b连接，能够进行真空排气以使得处理室201内的压力达到规定的压力(真空度)。
将排气管235a、阀235d、APC阀235c合并称为排气部235。此外，也可以将真空泵235b包含在排气部235中。
反应器200具有控制各部分的动作的控制器300。控制器300如图10所示，至少包括运算部(CPU)301、临时存储部302、存储部303、收发部304。控制器300经由收发部304与基板处理装置10的各构成连接，根据上位控制器或使用者的指示从存储部303调用程序或制程，并根据内容而对各构成的动作进行控制。此外，控制器300可以构成为专用的计算机，也可以构成为通用的计算机。例如，准备存储有上述程序的外部存储装置(例如磁带、软盘或硬盘等磁盘、CD或DVD等光盘、MO等光磁盘、USB存储器(USB Flash Drive：USB闪存)或存储卡等半导体存储器)312，通过使用外部存储装置312将程序安装于通用的计算机，能够构成本实施方式的控制器300。另外，用于向计算机供给程序的方法不限于经由外部存储装置312供给的情况。例如，可以使用互联网或专用线路等通信方法，也可以从上位装置320经由收发部311接收信息，不经由外部存储装置312而供给程序。另外，也可以使用键盘或触摸面板等输入输出装置313向控制器300作出指示。
此外，存储部303或外部存储装置312构成为计算机能够读取的存储介质。以下将其一并简称为存储介质。此外，在本说明书中使用存储介质这一用语的情况包含仅有存储部303的情况、仅有外部存储装置312的情况或包含存储部303和外部存储装置312双方的情况。
CPU301构成为，从存储部303读取控制程序并执行，并且，对应于来自输入输出装置313的操作命令输入等从存储部303读取工艺制程。并且，CPU301构成为，按照所读取的工艺制程的内容控制各部件。
此外，控制器300不限于构成为专用的计算机的情况，也可以构成为通用的计算机。例如，准备存储有上述程序的外部存储装置(例如磁带、软盘或硬盘等磁盘、CD或DVD等光盘、MO等光磁盘、USB存储器或存储卡等半导体存储器)303，通过使用该外部存储装置312将程序安装于通用的计算机等，从而能够构成本实施方式的控制器300。此外，用于将程序向计算机供给的方法不限于经由外部存储装置312供给的情况。例如，也可以使用互联网或专用线路等的通信方法供给程序，而不经由外部存储装置312。此外，存储部303或外部存储装置312构成为计算机能够读取的存储介质。以下也将其一并简称为存储介质。此外，本说明书中使用存储介质这样的用语的情况包含仅有存储部303的情况和仅有外部存储装置312的情况或包含存储部303和外部存储装置312双方的情况。
接下来使用图11及图12说明第1实施方式的基板处理工序。图11是表示本实施方式的基板处理工序的流程图。图12是表示本实施方式的成膜工序的流程图。在以下的说明中，构成基板处理装置10的反应器200的各部分的动作由控制器300控制。
在此，说明使用Si2H2Cl2气作为原料气体、使用氨气作为反应气体，在基板S上形成氮化硅(SiN)膜来作为薄膜的例子。
说明基板搬入/载置工序S110。在反应器200中，使销219上升，使销219贯穿基板载置板217的贯穿孔217a。其结果是，销219成为与基板载置板217表面相比仅突出规定高度的状态。接下来，将闸阀205打开，使用未图示的基板移载机，如图3所示，将基板S载置在销219上。载置后使销219下降，将基板S载置在凹部217b中。
然后使基板载置板217旋转，使得未载置有基板S的凹部217b与闸阀205面对。之后同样地将基板载置于凹部217b。重复进行以上处理，直到全部凹部217b载置基板S。
在将基板S搬入凹部217b后，使基板移载机向反应器200外部退避，使闸阀205关闭而使容器203内密闭。
此外，在将基板S向处理室201内搬入时，优选通过排气部234、235对处理室201内进行排气，并从第一非活性气体供给部260向处理室201内供给作为非活性气体的N2气。由此，能够抑制颗粒进入处理室201内、或颗粒附着于基板S上。真空泵234b、235b至少在从基板搬入/载置工序(S110)到后述的基板搬出工序(S170)结束为止的期间，始终为动作状态。
在将基板S向基板载置板217载置时，预先向加热器280供给电力，控制使得基板S的表面达到规定的温度。基板S的温度为例如室温以上650℃以下，优选为室温以上且为400℃以下。加热器280至少在从基板搬入/载置工序(S110)到后述的基板搬出工序(S170)结束为止的期间内始终为通电状态。
与之并行地，从第二非活性气体供给部270向容器204、加热器单元281供给非活性气体。非活性气体至少在从基板搬入/载置工序(S110)到后述的基板搬出工序(S170)结束为止的期间内进行供给。
说明基板载置板旋转开始工序S120。在基板S载置于各凹部217b后，控制旋转部224使得基板载置板217沿R方向旋转。通过使基板载置板217旋转，基板S按照第1处理区域206a、第1吹扫区域207a、第2处理区域206b、第2吹扫区域207b的顺序移动。
说明气体供给开始工序S130。若加热基板S达到希望的温度且基板载置板217达到希望的旋转速度，则阀244打开，开始向第1处理区域206a内供给Si2H2Cl2气。与之并行地，打开阀254向第2处理区域206b内供给氨气。
此时，调节MFC243以使Si2H2Cl2气的流量达到规定流量。此外、Si2H2Cl2气的供给流量为例如50sccm以上500sccm以下。
另外，调节MFC253以使得氨气的流量达到规定流量。此外，氨气的供给流量为例如100sccm以上5000sccm以下。
此外，在基板搬入/载置工序S110后继续通过排气部234、235使处理室201内排气，并且从第一非活性气体供给部260向第1吹扫区域207a内及第2吹扫区域207b内供给作为吹扫气体的N2气。另外，通过恰当地调节APC阀234c、APC阀235c的阀开度，从而使处理室201内的压力成为规定压力。
说明成膜工序S140。在此说明成膜工序S140的基本流程，详细说明见后述。在成膜工序S140中，各基板S在第一处理区域206a形成含硅层，在进一步旋转后的第二处理区域206b中，含硅层与氨气反应，在基板S上形成氮化硅膜。使基板载置部旋转规定次数，以成为希望的膜厚。
说明气体供给停止工序S150。在旋转规定次数后关闭阀244、254，停止向第1处理区域206a供给Si2H2Cl2气，以及停止向第2处理区域206b供给NH3气。
说明基板载置板旋转停止工序S160。在气体供给停止S150后使基板载置板217的旋转停止。
说明基板搬出工序S170。使基板载置板旋转以使基板S移动至与闸阀205相对的位置。之后与基板搬入时同样地，将基板S支承在销219上。在支承后打开闸阀205，使用未图示的基板移载机将基板S向容器203外部搬出。按照所处理的基板S的张数重复以上动作，将全部基板S搬出。在搬出后，停止第一非活性气体供给部260、第二非活性气体供给部270进行的非活性气体的供给。
接下来使用图12说明成膜工序S140的详细内容。此外，关于从第1处理区域206a通过工序S210到第2吹扫区域通过工序S240，主要说明载置在基板载置部217上的多张基板S中的一张基板S。
如图12所示，在成膜工序S140中，通过基板载置板217的旋转使多个基板S依次通过第1处理区域206a、第1吹扫区域207a、第2处理区域206b及第2吹扫区域207b。
说明通过第1处理区域S210。在基板S从第1处理区域206a中通过时，向基板S供给Si2H2Cl2气。此时由于第1处理区域206a内没有反应气体，因此Si2H2Cl2气不会与反应气体反应，而与基板S的表面直接接触(附着)。由此，在基板S的表面形成第1层。
通过第1吹扫区域S220。基板S在从第1处理区域206a通过后移动至第1吹扫区域207a。在基板S从第1吹扫区域207a中通过时，在第1处理区域206a中，在基板S上未能形成牢固结合的Si2H2Cl2的成分被非活性气体从基板S上除去。
说明通过第2处理区域S230。基板S在从第1吹扫区域207a中通过后向第2处理区域206b移动。在基板S从第2处理区域206b中通过时，在第2处理区域206b中，第1层与作为反应气体的氨气反应。由此在基板S之上形成至少含有Si及N的第2层。
说明通过第2吹扫区域S240。基板S在从第2处理区域206b中通过后移动至第2吹扫区域207b。在基板S通过第2吹扫区域207b时，在第2处理区域206c中从基板S上的第3层脱离了的HCl或剩余的H2气等被非活性气体从基板S上除去。
按照上述方式，依次向基板供给相互反应的至少两种反应气体。将以上的通过第1处理区域S210、通过第1吹扫区域S220、通过第2处理区域S230及通过第2吹扫区域S240设为一个循环。
说明判定S250。控制器300判定是否实施了规定次数的上述一个循环。具体来说，控制器300对基板载置板217的转速进行计数。
在未实施规定次数的上述一个循环时(在S250中判定为为否的情况下)，使基板载置板217进一步继续旋转，重复包含通过第1处理区域S210、通过第1吹扫区域S220、通过第2处理区域S230、通过第2吹扫区域S240的循环。通过按照上述方式层叠而形成薄膜。
在实施了规定次数的上述一个循环时(在S250中判定为是的情况下)，结束成膜工序S140。通过如上所述实施规定次数的上述一个循环，从而形成层叠而得到的规定膜厚的薄膜。
此外，本实施方式中，作为反应气体以氨气为例进行了说明，但不限于此。
以上具体说明了本公开的实施方式，但本公开不限定于上述实施方式，能够在不脱离其要旨的范围内进行多种变更。
另外，在上述实施方式中，说明了使用Si2H2Cl2气作为原料气体、使用氨气作为反应气体并在基板S上形成SiN膜来作为氮化膜的情况，但作为原料气体，也可以使用SiH4、Si2H6、Si3H8、氨基硅烷、TSA气。作为反应气体也可以使用O2气并形成氧化膜。也可以在基板S上形成TaN、TiN等其他氮化膜、HfO、ZrO、SiO等氧化膜、Ru、Ni、W等金属膜。此外，在形成TiN膜或TiO膜的情况下，作为原料气体能够使用例如四氯钛(TiCl4)等。

Claims (15)

1.一种基板处理装置，其特征在于，包括：
金属制的容器，其具有对基板进行处理的处理室；
基板载置板，其在所述容器内以能够旋转的方式设置，在上表面以圆周状配置有多个基板载置面；
加热部，其对载置在多个所述基板载置面上的基板进行加热；
热衰减部，其设置在所述加热部与所述容器之间；
气体供给部，其向所述处理室供给气体；以及
支承部，其使所述基板载置板旋转，
所述支承部包括：
金属制的芯部，其固定所述基板载置板；以及
第一罩，其配置在所述芯部与所述处理室之间，
所述热衰减部构成为设置在所述第一罩上，且与所述芯部隔开空间相邻设置。
2.根据权利要求1所述的基板处理装置，其特征在于，
在所述容器的底部，使所述处理室与气体环境隔开地设有加热器单元，该加热器单元由金属壁、石英制的窗和所述加热部构成，
所述热衰减部配置在所述加热部与所述金属壁之间。
3.根据权利要求2所述的基板处理装置，其特征在于，
在所述容器的底部设有金属制的排气构造和与所述排气构造相邻的第二罩，
所述热衰减部设置在所述第二罩中的与所述排气构造相对一侧。
4.根据权利要求3所述的基板处理装置，其特征在于，
所述热衰减部与所述排气构造之间隔着空间相邻设置。
5.根据权利要求1所述的基板处理装置，其特征在于，
所述热衰减部构成为在表面涂覆有石英微粒的罩。
6.根据权利要求4所述的基板处理装置，其特征在于，
所述热衰减部构成为在表面涂覆有石英微粒的罩。
7.根据权利要求3所述的基板处理装置，其特征在于，
所述热衰减部构成为在表面涂覆有石英微粒的罩。
8.根据权利要求2所述的基板处理装置，其特征在于，
所述热衰减部构成为在表面涂覆有石英微粒的罩。
9.根据权利要求1所述的基板处理装置，其特征在于，
在所述容器的底部设有金属制的排气构造和与所述排气构造相邻的第二罩，
所述热衰减部设置在所述第二罩中的与所述排气构造相对一侧。
10.根据权利要求9所述的基板处理装置，其特征在于，
在所述热衰减部与所述排气构造之间设置空间。
11.根据权利要求10所述的基板处理装置，其特征在于，
所述热衰减部构成为在表面涂覆有石英微粒的罩。
12.根据权利要求9所述的基板处理装置，其特征在于，
所述热衰减部构成为在表面涂覆有石英微粒的罩。
13.一种半导体器件的制造方法，其特征在于，包括：
将基板向设置于金属制的容器的处理室搬送的工序；
将所述基板载置于基板载置板的工序，其中，所述基板载置板在所述容器内以能够旋转的方式设置，在该基板载置板的上表面以圆周状配置有多个基板载置面；以及
通过支承部使所述基板载置板旋转并由气体供给部向所述处理室供给气体，并且由在所述容器与加热部之间设置的热衰减部使从加热部对所述容器赋予的热能衰减，并由所述加热部对所述基板进行加热的工序，
所述支承部包括：
金属制的芯部，其固定所述基板载置板；以及
第一罩，其配置在所述芯部与所述处理室之间，
所述热衰减部构成为设置在所述第一罩上，且与所述芯部隔开空间相邻设置。
14.一种存储介质，其特征在于，
保存通过计算机使基板处理装置执行如下步骤的程序：
将基板向设置于金属制的容器的处理室搬送的步骤；
将所述基板载置于基板载置板的步骤，其中，所述基板载置板在所述容器内以能够旋转的方式设置，在该基板载置板的上表面以圆周状配置有多个基板载置面；以及
通过支承部使所述基板载置板旋转并由气体供给部向所述处理室供给气体，并且由在所述容器与加热部之间设置的热衰减部使从加热部向所述容器赋予的热能衰减，并由所述加热部对所述基板进行加热的步骤，
所述支承部包括：
金属制的芯部，其固定所述基板载置板；以及
第一罩，其配置在所述芯部与所述处理室之间，
所述热衰减部构成为设置在所述第一罩上，且与所述芯部隔开空间相邻设置。
15.一种基板处理方法，其特征在于，包括：
将基板向设置于金属制的容器的处理室搬送的工序；
将所述基板载置于基板载置板的工序，其中，所述基板载置板在所述容器内以能够旋转的方式设置，在该基板载置板的上表面以圆周状配置有多个基板载置面；以及
通过支承部使所述基板载置板旋转并由气体供给部向所述处理室供给气体，并且由在所述容器与加热部之间设置的热衰减部使从加热部对所述容器赋予的热能衰减，并由所述加热部对所述基板进行加热的工序，
所述支承部包括：
金属制的芯部，其固定所述基板载置板；以及
第一罩，其配置在所述芯部与所述处理室之间，
所述热衰减部构成为设置在所述第一罩上，且与所述芯部隔开空间相邻设置。
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