TWI716972B - 基板處理裝置及半導體裝置之製造方法、程式 - Google Patents

基板處理裝置及半導體裝置之製造方法、程式 Download PDF

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TWI716972B
TWI716972B TW108129547A TW108129547A TWI716972B TW I716972 B TWI716972 B TW I716972B TW 108129547 A TW108129547 A TW 108129547A TW 108129547 A TW108129547 A TW 108129547A TW I716972 B TWI716972 B TW I716972B
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substrate
container
mounting plate
processing apparatus
quartz
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TW108129547A
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TW202033815A (zh
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稲田哲明
大橋直史
松井俊
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日商國際電氣股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

本發明之課題在於在旋轉型裝置中降低熱膨脹之影響。 本發明係一種技術，其具有： 金屬製之容器，其具有處理基板之處理室； 基板載置板，其設置為可於上述容器內旋轉，且於上表面呈圓周狀地配置有數個基板載置面； 加熱部，其將載置於上述數個基板載置面之基板加熱； 熱衰減部，其設置於上述加熱部與上述容器之間； 氣體供給部，其對上述處理室供給氣體；及 支持部，其使上述基板載置板旋轉。

Description

基板處理裝置及半導體裝置之製造方法、程式
本發明係關於一種基板處理裝置及半導體裝置之製造方法、程式。
作為處理半導體基板之裝置，已知有將數個基板於旋轉托盤上配置於圓周方向，使該基板載置部旋轉而將兩種氣體依序供給至數個基板之旋轉型裝置(參照專利文獻1)。於供給氣體時，藉由加熱部而加熱基板。
[專利文獻1]日本專利特開2013-84898
(發明所欲解決之問題)
於旋轉型裝置中，處理例如300 mm之基板。由於將300 mm之基板配置於圓周方向，故而裝置本身變大。因此，作為構成裝置之容器之材質，使用容易加工之金屬。又，若將300 mm基板配置於圓周方向則重量增加，故而旋轉托盤由金屬支持，以便可承受該重量。
於處理基板時進行加熱處理。此時，裝置之容器或支持旋轉托盤之支持部等由金屬構成，故而導致熱蓄積，進而熱膨脹。因此，有產生零件之位置偏移等之虞。
本發明係解決上述課題者，目的在於提供一種於旋轉型裝置中減少熱膨脹之影響之技術。 (解決問題之技術手段)
提供一種技術，其具有：金屬製之容器，其具有處理基板之處理室；基板載置板，其設置為可於上述容器內旋轉，且於上表面呈圓周狀地配置有數個基板載置面；加熱部，其將載置於上述數個基板載置面之基板加熱；熱衰減部，其設置於上述加熱部與上述容器之間；氣體供給部，其對上述處理室供給氣體；及支持部，其使上述基板載置板旋轉。 (對照先前技術之功效)
根據本發明之基板處理裝置及半導體裝置之製造方法，可於旋轉型裝置中減少熱膨脹之影響。
以下，一面參照圖式，一面對本發明之實施形態進行說明。關於本實施形態之作為處理爐之反應器之構成，主要使用圖1至圖10進行說明。圖1係本實施形態之作為基板處理裝置之反應器200之橫剖面概略圖。圖2係本實施形態之反應器200之縱剖面概略圖，且係圖1所示之反應器之A-A'線剖面圖。再者，A-A'線為自A通過容器203之中心朝向A'之線。
圖3係說明基板支持機構之說明圖。圖4至圖5係說明熱衰減部之說明圖。圖6至圖9係說明氣體供給系統之說明圖。圖10係說明控制器之圖。
以下說明反應器200之具體構成。如圖1及圖2所示，反應器200具備為圓筒狀之氣密容器之容器203。因此，作為構成裝置之容器之材質，使用容易加工之金屬。又，若將300 mm基板配置於圓周方向則重置增加，故而旋轉托盤由金屬支持，以便可承受該重量。例如，由不鏽鋼(SUS)或鋁合金等構成。於容器203內，構成有處理基板S之處理室201。於容器203連接有閘閥205，經由閘閥205而將基板S搬入搬出。
處理室201具有供給處理氣體之處理區域206與供給沖洗氣體之沖洗區域207。此處，處理區域206與沖洗區域207呈圓周狀地交替配置。例如，按照第1處理區域206a、第1沖洗區域207a、第2處理區域206b及第2沖洗區域207b之順序配置。如下所述，對第1處理區域206a內供給原料氣體，對第2處理區域206b內供給反應氣體，又，對第1沖洗區域207a及第2沖洗區域207b供給惰性氣體。藉此，根據供給至各區域內之氣體，對基板S實施既定之處理。
沖洗區域207為將第1處理區域206a與第2處理區域206b於空間上分開之區域。沖洗區域207之頂壁208構成為較處理區域206之頂壁209更低。於第1沖洗區域207a設置有頂壁208a，於第2沖洗區域207b設置有頂壁208b。藉由使各頂壁較低，而提高沖洗區域207之空間之壓力。藉由對該空間供給沖洗氣體，而劃分相鄰之處理區域206。再者，沖洗氣體亦具有將基板S上之多餘之氣體去除之作用。
於容器203之中央，例如設置有於容器203之中心具有旋轉軸且旋轉自如地構成之基板載置板217。基板載置板217例如由石英、碳或SiC等材料形成，以避免對基板S之金屬污染之影響。
基板載置板217構成為能夠將數片(例如6片)基板S在容器203內於同一面上且沿著旋轉方向呈同一圓周狀地配置。此處所言之「同一面」，並不限定於完全之同一面，只要於自上表面觀察基板載置板217時，以數片基板S不相互重疊之方式排列即可。
於基板載置板217表面中之基板S之支持位置，設置有凹部217b。與要處理之基板S之片數相同數量之凹部217b自基板載置板217之中心起相互等間隔(例如60°之間隔)地配置於同心圓狀之位置。再者，於圖1中，為方便說明而省略了圖示。
各凹部217b例如自基板載置板217之上表面觀察為圓形狀，自側面觀察為凹形狀。較佳為，以凹部217b之直徑較基板S之直徑稍大之方式構成。於該凹部217b之底設置有基板載置面，藉由於凹部內載置基板S，可將基板S載置於基板載置面。於各凹部217b，設置有數個供下述銷219貫通之貫通孔217a。
於容器203中基板載置板217下方且與閘閥205相對之部位，設置有圖3中所記載之基板保持機構218。基板保持機構218具有數個銷219，該數個銷219於基板S之搬入、搬出時，頂起基板S，支持基板S之背面。銷219為能夠延伸之構成，例如能夠收納於基板保持機構218本體。於移載基板S時，銷219延伸而貫通貫通孔217a，並且保持基板S。然後，藉由銷219之前端向下方移動，而將基板S載置於凹部217b。基板保持機構218則例如固定於容器203。基板保持機構218只要為於基板載置時能夠將銷219插入至孔217a之構成即可，亦可固定於下述內周凸部282或外周凸部283。
基板載置板217固定於芯部221。芯部221設置於基板載置板217之中心，具有固定基板載置板217之作用。由於為支持基板載置板217之構造，故而使用金屬以便可承受重量。於芯部221之下方配置有軸222。軸222支持芯部221。
軸222之下方貫通設置於容器202之底部之孔223，於容器203外由能夠氣密之容器204覆蓋。又，軸222之下端連接於旋轉部224。旋轉部224構成為搭載旋轉軸或馬達等，根據下述控制器300之指示能夠使基板載置板217旋轉。
以覆蓋芯部221之方式設置有石英蓋225。即，石英蓋225設置於芯部221與處理室201之間。石英蓋225構成為隔著空間而覆蓋芯部221。於石英蓋225中之芯部221側塗覆有熱衰減部226。石英蓋225例如由石英或SiC等材料形成，以避免對基板S之金屬污染之影響。熱衰減部226之詳細情況將於下文敍述。將芯部221、軸222、旋轉部224、石英蓋225統稱為支持部。
於基板載置板217之下方，配置有內包作為加熱部之加熱器280之加熱器單元281。加熱器280將載置於基板載置板217之各基板S加熱。加熱器280沿著容器203之形狀構成為圓周狀。
加熱器單元281主要包括設置於容器203之底部上且容器203之中心側之內周凸部282、配置於較加熱器280靠外周側之外周凸部283、及加熱器280。內周凸部282、加熱器280、外周凸部283配置為同心圓狀。在內周凸部282與外周凸部283之間形成空間284。加熱器280配置於空間284。內周凸部282、外周凸部283亦係固定容器203者，故而亦可作為容器203之一部分考慮。
此處，說明了圓周狀之加熱器280，但只要可加熱基板S則不必限定於此，亦可設為分割為數個的構造。
於內周凸部282之上部且加熱器280側形成凸緣282a。窗285由凸緣282a與外周凸部283之上表面支持。窗285為使從加熱器280產生之熱透過之材質，例如由石英構成。窗285藉由利用下述排氣構造286之上部286a與內周凸部282夾持而固定。此時，於窗285與內周凸部282之間，於窗285與上部286a之間設置空間。設置空間之理由將於下文敍述。
於加熱器280連接加熱器控制部287。加熱器280電性地連接於下述控制器300，根據控制器300之指示而控制向加熱器280之電力供給，進行溫度控制。
於容器203之底部，設置與空間284連通之惰性氣體供給管275。惰性氣體供給管275連接於下述惰性氣體供給部270。自惰性氣體供給部270供給之惰性氣體經由惰性氣體供給管275而供給至空間284。藉由將空間284設為惰性氣體環境氣體，而防止處理氣體自窗285附近之間隙等進入。
於外周凸部283之外周面與容器203之內周面之間，配置金屬製之排氣構造286。排氣構造286具有排氣槽288與排氣緩衝空間289。排氣槽288、排氣緩衝空間289沿著容器203之形狀而構成為圓周狀。
將排氣構造286中不與外周凸部283接觸之部位稱為上部286a。如上所述，上部286a與內周凸部282一同固定窗285。
於如本實施形態之旋轉型基板處理裝置中，較理想為使基板S之高度與排氣口為相同之高度，或者使高度接近。假設於排氣口之高度較低之情況下，有於基板載置板之端部產生氣體之亂流之虞。相對於此，藉由設為相同之高度，或者使高度接近，而於排氣口側之基板邊緣亦可不產生亂流。
於本實施形態中，使排氣構造286之上端為與基板載置板217相同之高度。於該情況下，如圖2所示產生上部286a自窗285突出之部分，故而就顆粒擴散防止之觀點而言，於該部分設置石英蓋290。假設於無石英蓋290之情況下，有氣體與上部286a接觸而上部286a腐蝕，於處理室201內產生顆粒之虞。於石英蓋290與上部286a之間設置空間299。設置空間299之理由將於下文敍述。此處，亦將石英蓋290稱為第一蓋，或第一石英蓋。又，亦將上述石英蓋225稱為第二蓋，或第二石英蓋。
於排氣構造286之底，設置排氣口291、排氣口292。排氣口291主要將供給至處理空間206a之原料氣體與自其上游供給之沖洗氣體排出。排氣口292主要將供給至處理空間206b之反應氣體與自其上游供給之沖洗氣體排出。各氣體經由排氣槽288、排氣緩衝空間289而自排氣口291、排氣口292排出。
且說，如至此為止所說明般，反應器200主要包括容器203或凸狀構件等金屬製零件與基板載置板217或窗285等非金屬構件。非金屬構件為不易產生顆粒且高溫條件下亦可耐受之素材，例如為石英或SiC、陶瓷。
金屬之熱膨脹係數例如與如石英之非金屬構件相比明顯大。因此，於加熱至既定溫度之情況下，產生石英不伸長而僅金屬延展之現象。於如本實施形態之裝置中，有於石英零件與金屬零件之間產生偏移而產生顆粒等之虞。
具體而言，於窗285附近之構造中，有藉由內周凸部282、外周凸狀構件283之熱膨脹而與窗285接觸之虞。於芯部221附近，有藉由芯部221之熱膨脹而導致基板載置板217偏移，於載置基板S時銷219與貫通孔217a接觸之虞。因其等之接觸等而產生顆粒。
如此，於石英零件與金屬零件混合存在之裝置中，因熱膨脹差而產生各種問題。因此，於本實施形態中，於如石英與金屬般熱膨脹係數相差較大之構件相鄰之部分，設置熱衰減部以抑制金屬零件之熱膨脹。
其次，說明熱衰減部之詳細情況。於本實施形態中，設置有設置於芯部221之周圍之熱衰減部226、設置於加熱器單元281之熱衰減部293、295、296、設置於窗285之熱衰減部297、及設置於石英蓋290之熱衰減部298。
繼而，使用圖4、圖5說明熱衰減部之性質。各熱衰減部構成為對石英零件於表面塗覆石英之微粒子之蓋。藉由使石英玻璃之微粒子作為蓋附著，而於微粒子間散射，並且其為漫反射，故而尤其熱之反射性能較高。
已知有石英微粒子之塗覆於例如厚度為200 μm左右之情況下，相對於波長1.0 μm至2 μm之電磁波反射70%至80%。
圖4係表示金屬相對於波長之吸收率之圖。例如，相對於波長1.0 μm之電磁波，不鏽鋼之吸收率為0.35。又，相對於波長1.6 μm之電磁波，鋁合金之吸收率為0.4，不鏽鋼之吸收率為0.2至0.9。可知鋁合金或不鏽鋼為用於多數基板處理裝置之材質，但於該等波長頻帶時金屬之吸收率非常高。
若對照上述反射率與圖4之內容進行研究，則可知相對於鋁合金或不鏽鋼吸收率較高之波長(例如1.0至1.6 μm)之電磁波，石英微粒子之反射率非常高。
圖5係說明電磁波之反射情況之說明圖。再者，為了方便說明而省略石英401之電磁波之反射率。於圖5中，電磁波404、411朝向石英401、金屬402照射。於圖5(a)中由石英微粒子構成之熱衰減部403塗覆於石英401中與金屬402對向之面。金屬402為無熱衰減部403之狀態。(b)為未於石英401塗覆有熱衰減部之狀態。
例如於照射波長1.0 μm之電磁波之情況下，於圖8(a)之構成中熱衰減部403反射電磁波404。若熱衰減部403之厚度為200 μm左右，則反射約80%之電磁波407。因此，到達至金屬之電磁波405衰減至約20%。藉由透過該熱衰減部401之電磁波406而將金屬402加熱。
另一方面，如(b)般在不具有熱衰減部403之情況下，透過石英401之電磁波411之一部分作為電磁波413反射，但是幾乎不衰減之電磁波412由金屬402吸收。如此，(b)與(a)相比吸收能量明顯大，故而較之(a)，金屬之溫度變高。
本實施形態中之各熱衰減部使用以上所說明之石英微粒子塗覆，將向金屬製零件之熱能衰減。
尚且，於相鄰之零件為金屬之情況下，有由於熱膨脹係數之差異而於石英微粒子塗層與金屬之間產生偏移，使其成為顆粒之虞。因此，各熱衰減部以如下之方式構成。
熱衰減部226塗覆於為石英蓋225之內側之加熱器280側。藉由熱衰減部226，而將向芯部221之熱能衰減。
又，與芯部221隔著空間相鄰。由於石英蓋225由石英構成，故而熱膨脹係數與由石英微粒子構成之熱衰減部226相等。又，由於與芯部221隔著空間相鄰，故而不受芯部221之熱膨脹之影響。因此，不產生因熱膨脹係數之差所致之塗層之剝離等。
又，熱衰減部226由於為石英蓋225之內側，故而不附著處理氣體。因此，亦不產生因處理氣體所致之腐蝕或因蝕刻等所致之顆粒。
藉由利用此種構成來使向芯部221之熱能衰減抑制熱膨脹，而防止設置於旋轉板217之孔217a之位置變化。
熱衰減部293塗覆於容器203之底面，熱衰減部295塗覆於內周凸部282之空間284側之面，熱衰減部296塗覆於外周凸部283之空間284側之面。
藉由設置熱衰減部293、295、296，而將自加熱器280向容器203之底面、內周凸部282、外周凸部283之熱能衰減。然而，各熱衰減部由於與容器203等金屬零件接觸，故而於藉由長時間之加熱而將金屬零件加熱之情況下，有因熱膨脹差而產生顆粒之可能性。相對於此，於本構造中，熱衰減部293設置於加熱器單元281之中，藉由窗285而與處理室201隔離，故而即便於加熱器單元281中產生顆粒等，亦可抑制向處理室201擴散。
熱衰減部297塗覆於窗285之外周面。即，設置於與處理室201介隔基板載置板217而隔離之區域。藉由設置於窗285之外周，而將從加熱器280向上部286a、內側凸部282之凸部分之熱能衰減。由於窗285為石英零件，故而熱膨脹係數與熱衰減部297相等。
再者，由於上部286a隔著空間299而相鄰，故而即便因長時間之加熱而使上部286a蓄熱而膨脹，亦不受其影響。因此，可抑制因熱膨脹係數之差進行接觸等而產生之塗膜之剝離等。假設因熱之影響等而使熱衰減部297劣化成為顆粒，亦由於與處理室201隔離設置，故而可防止向處理室201擴散。
熱衰減部298構成於石英蓋290之外周。即，於與處理室201之間設置有石英蓋290。藉由設置於石英蓋290之外周，而將從加熱器280向上部286a之熱能衰減。由於石英蓋290為石英零件，故而熱膨脹係數與熱衰減部297相等。又，由於與上部286a隔著空間299相鄰，故而即便因長時間之加熱而使上部286a蓄熱而膨脹，亦不受其影響。因此，可抑制因熱膨脹係數之差所致之塗層之剝離等之產生。假設因熱之影響等而使熱衰減部297劣化成為顆粒，亦由於在與處理室201之間設置有石英蓋290，故而可防止向處理室201擴散。
繼而，使用圖1、圖6說明原料氣體供給部240。如圖1所記載，於容器203之側方朝向容器203之中心方向插入噴嘴245。噴嘴245配置於第1處理區域206a。圖1之B與圖6之B連接。於噴嘴245連接有氣體供給管241之下游端。
於氣體供給管241，自上游方向起依序設置有原料氣體供給源242、作為流量控制器(流量控制部)之質量流量控制器(MFC)243、及作為開閉閥之閥244。
原料氣體經由MFC243、閥244、噴嘴245而自氣體供給管241供給至第1處理區域206a內。
此處所言之「原料氣體」係指處理氣體之一，且係薄膜形成時成為原料之氣體。原料氣體包含例如鈦(Ti)、鉭(Ta)、矽(Si)、鉿(Hf)、鋯(Zr)、釕(Ru)、鎳(Ni)、及鎢(W)中之至少任一者，作為構成薄膜之元素。
具體而言，於本實施形態中，原料氣體例如為二氯矽烷(Si2 H2 Cl2 )氣體。於原料氣體之原料於常溫下為氣體之情況下，MFC243為氣體用之質量流量控制器。
主要藉由氣體供給管241、MFC243、閥244、噴嘴245，而構成原料氣體供給部(亦稱為第1氣體供給系統、或原料氣體供給部)240。再者，亦可將原料氣體供給源242包含在原料氣體供給部240中而考慮。
繼而，使用圖1、圖7說明原料氣體供給部250。如圖1所記載，於容器203之側方朝向容器203之中心方向插入噴嘴255。噴嘴255配置於第2處理區域206b。圖1之C與圖7之C連接。
於噴嘴255連接有氣體供給管251。於氣體供給管251，自上游方向起依序設置有反應氣體供給源252、作為流量控制器(流量控制部)之MFC253、及作為開閉閥之閥254。
反應氣體經由MFC253、閥254、噴嘴255而自反應氣體供給源252供給至第2處理區域206b內。
此處所謂「反應氣體」係指處理氣體之一，且係與於基板S上藉由原料氣體而形成之第1層反應之氣體。反應氣體例如為氨(NH3 )氣、氮(N2 )氣、氫(H2 )氣及氧(O2 )氣中之至少任一者。此處，反應氣體例如為氨氣。
主要藉由氣體供給管251、MFC253、閥254、噴嘴255而構成反應氣體供給部(第2氣體供給部)250。再者，亦可將反應氣體供給源252包含在反應氣體供給部250中而考慮。
繼而，使用圖1、圖8說明第1惰性氣體供給部260。如圖1所記載，於容器203之側方朝向容器203之中心方向插入噴嘴265、噴嘴266。噴嘴265為插入至第1沖洗區域207a之噴嘴。例如，固定於第1沖洗區域207a之頂壁208a。噴嘴266為插入至第1沖洗區域207b之噴嘴。例如，固定於第1沖洗區域207b之頂壁208b。
圖1之D與圖8之D連接。於噴嘴265、噴嘴266，連接有惰性氣體供給管261之下游端。於惰性氣體供給管261，自上游方向起依序設置有惰性氣體供給源262、MFC263、及閥264。惰性氣體經由MFC263、閥264、噴嘴265及噴嘴266而自惰性氣體供給管261分別供給至第1沖洗區域207a內及第2沖洗區域207b內。供給至第1沖洗區域207a內及第2沖洗區域207b內之惰性氣體作為沖洗氣體而發揮作用。
主要藉由惰性氣體供給管261、MFC263、閥264、噴嘴265、噴嘴266而構成第1惰性氣體供給部。再者，亦可將惰性氣體供給源262包含在第1惰性氣體供給部中而考慮。
繼而，使用圖2、圖9說明第2惰性氣體供給部270。圖2之E與圖9之E連接。於惰性氣體供給管275，連接有惰性氣體供給管271之下游端。於惰性氣體供給管271，自上游方向起依序設置有惰性氣體供給源272、MFC273、及閥274。惰性氣體經由MFC273、閥274、惰性氣體供給管275而自惰性氣體供給管271供給至空間284、容器204。
供給至容器204之惰性氣體經由旋轉托盤217與窗285之間之空間而自排氣槽288排出。藉由設為此種構造，而防止原料氣體或反應氣體轉入至旋轉托盤217與窗285間之空間。進而，即便因上部286a之熱膨脹而使上部286a與熱衰減部297、熱衰減部298接觸產生顆粒，亦可不使顆粒進入至處理室201地自排氣槽288排氣。
主要藉由惰性氣體供給管271、MFC273、閥274、惰性氣體供給管275而構成第2惰性氣體供給部270。再者，亦可將惰性氣體供給源272包含在第2惰性氣體供給部270中而考慮。
此處，「惰性氣體」例如係氮(N2 )氣、氦(He)氣、氖(Ne)氣、氬(Ar)氣等稀有氣體之至少任一者。此處，惰性氣體例如為N2 氣體。
如圖1所示，於容器203設置有排氣口291、排氣口292。排氣口291設置於處理區域206a之旋轉方向下游側。主要將原料氣體與惰性氣體排出。
以與排氣口291連通之方式，設置有作為排氣部234之一部分之排氣管234a。於排氣管234a，經由作為開閉閥之閥234d、作為壓力調整器(壓力調整部)之自動壓力控制器(APC，Auto Pressure Controller)閥234c而連接有作為真空排氣裝置之真空泵234b，且構成為能夠真空排氣以使得處理室201內之壓力成為既定之壓力(真空度)。
將排氣管234a、閥234d、APC閥234c統稱為排氣部234。再者，亦可將真空泵234b包含在排氣部234。
又，如圖1、圖2所示，以與排氣口292連通之方式，設置有排氣部235。排氣口292設置於處理區域206b之旋轉方向下游側。主要將反應氣體與惰性氣體排出。
以與排氣口292連通之方式，設置有作為排氣部235之一部分之排氣管235a。於排氣管235a，經由作為開閉閥之閥235d、作為壓力調整器(壓力調整部)之APC閥235c而連接有作為真空排氣裝置之真空泵235b，且構成為能夠真空排氣以使得處理室201內之壓力成為既定之壓力(真空度)。
將排氣管235a、閥235d、APC閥235c統稱為排氣部235。再者，亦可將真空泵235b包含在排氣部235。
反應器200具有對各部之動作進行控制之控制器300。控制器300如圖10所記載，至少具有運算部(CPU)301、暫時記憶部302、記憶部303、收發部304。控制器300經由收發部304而連接於基板處理裝置10之各構成，根據上位控制器或使用者之指示自記憶部303叫出程式或製程配方，根據其內容對各構成之動作進行控制。再者，控制器300亦可構成為專用之電腦，亦可構成為通用之電腦。例如，藉由準備儲存有上述程式之外部記憶裝置(例如，磁帶、軟碟或硬碟等磁碟、光碟(CD，Compact Disc)或數位多功能光碟(DVD，Digital Versatile Disc)等光碟、磁光碟(MO，magnetic optical disc)等磁光碟、通用序列匯流排(USB，Universal Serial Bus)隨身碟(USB Flash Drive)或記憶卡等半導體記憶體)312，使用外部記憶裝置312將程式安裝於通用之電腦，可構成本實施形態之控制器300。又，用以對電腦供給程式之手段並不限定於經由外部記憶裝置312而供給之情況。例如，亦可使用網際網路或專用線路等通信手段，亦可自上位裝置320經由收發部311接收資訊，不經由外部記憶裝置312而供給程式。又，亦可使用鍵盤或觸控面板等輸入輸出裝置313，給予控制器300指示。
再者，記憶部303或外部記憶裝置312構成為電腦能夠讀取之記錄媒體。以下，將其等進行統稱而簡稱為記錄媒體。再者，於本說明書中使用記錄媒體之用語之情況下，有僅包含記憶部303單體之情況、僅包含外部記憶裝置312單體之情況、或包含其兩者之情況。
CPU301構成為自記憶部303讀出控制程式後執行，並且根據自輸入輸出裝置313之操作指令之輸入等自記憶部303讀出製程配方。而且，CPU301構成為以遵照所讀出之製程配方之內容之方式對各零件進行控制。
再者，控制器300並不限定於構成為專用之電腦之情況，亦可構成為通用之電腦。例如，藉由準備儲存有上述程式之外部記憶裝置(例如，磁帶、軟碟或硬碟等磁碟、CD或DVD等光碟、MO等磁光碟、USB隨身碟或記憶卡等半導體記憶體)303，使用該外部記憶裝置312將程式安裝於通用之電腦等，可構成本實施形態之控制器300。再者，用以對電腦供給程式之手段並不限定於經由外部記憶裝置312而供給之情況。例如，亦可使用網際網路或專用線路等通信手段，不經由外部記憶裝置312而供給程式。再者，記憶部303或外部記憶裝置312構成為電腦能夠讀取之記錄媒體。以下，將其等進行統稱而簡稱為記錄媒體。再者，於本說明書中使用記錄媒體之用語之情況下，有僅包含記憶部303單體之情況、僅包含外部記憶裝置312單體之情況、或包含其兩者之情況。
其次，使用圖11及圖12，對第1實施形態之基板處理步驟進行說明。圖11係表示本實施形態之基板處理步驟之流程圖。圖12係表示本實施形態之成膜步驟之流程圖。於以下之說明中，基板處理裝置10之反應器200之構成各部之動作係由控制器300控制。
此處，對使用Si2 H2 Cl2 氣體作為原料氣體，使用氨氣作為反應氣體，於基板S上形成氮化矽(SiN)膜作為薄膜之例進行說明。
對基板搬入、載置步驟S110進行說明。於反應器200中，使銷219上升，使銷219貫通基板載置板217之貫通孔217a。其結果，成為銷219較基板載置板217表面突出既定之高度之狀態。繼而，打開閘閥205，使用未圖示之基板移載機，如圖3般將基板S載置於銷219上。載置後，使銷219下降，將基板S載置於凹部217b上。
然後，以未載置基板S之凹部217b與閘閥205面對之方式，使基板載置板217旋轉。然後，同樣地將基板載置於凹部217b。重複此操作直至所有凹部217b均載置有基板S。
於將基板S搬入至凹部217b之後，使基板移載機向反應器200之外退避，關閉閘閥205而將容器203內密閉。
再者，於將基板S搬入至處理室201內時，較佳為藉由排氣部234、235而將處理室201內排氣，且自第一惰性氣體供給部260對處理室201內供給作為惰性氣體之N2 氣體。藉此，能夠抑制顆粒向處理室201內進入或顆粒向基板S上附著。真空泵234b、235b至少自基板搬入、載置步驟(S110)至下述基板搬出步驟(S170)結束為止之期間始終設為作動之狀態。
於將基板S載置於基板載置板217時，預先對加熱器280供給電力，以基板S之表面成為既定之溫度之方式進行控制。基板S之溫度例如為室溫以上且650℃以下，較佳為室溫以上且400℃以下。加熱器280至少自基板搬入、載置步驟(S110)至下述基板搬出步驟(S170)結束為止之期間始終設為通電之狀態。
與之並行地，自第二惰性氣體供給部270對容器204、加熱器單元281供給惰性氣體。惰性氣體至少自基板搬入、載置步驟(S110)至下述基板搬出步驟(S170)結束為止之期間供給。
對基板載置板旋轉開始步驟S120進行說明。於將基板S載置於各凹部217b之後，旋轉部224以使基板載置板217向R方向旋轉之方式進行控制。藉由使基板載置板217旋轉，而基板S按照第1處理區域206a、第1沖洗區域207a、第2處理區域206b、第2沖洗區域207b之順序移動。
對氣體供給開始步驟S130進行說明。於將基板S加熱達到所期望之溫度，且基板載置板217達到所期望之旋轉速度之後，打開閥244對第1處理區域206a內開始供給Si2 H2 Cl2 氣體。與之並行地，打開閥254對第2處理區域206b內供給氨氣。
此時，以Si2 H2 Cl2 氣體之流量成為既定之流量之方式，調整MFC243。再者，Si2 H2 Cl2 氣體之供給流量例如為50 sccm以上且500 sccm以下。
又，以氨氣之流量成為既定之流量之方式，調整MFC253。再者，氨氣之供給流量例如為100 sccm以上且5000 sccm以下。
再者，於基板搬入、載置步驟S110後，繼續藉由排氣部234、235而將處理室201內排氣，並且自第一惰性氣體供給部260對第1沖洗區域207a內及第2沖洗區域207b內供給作為沖洗氣體之N2 氣體。又，藉由適當調整APC閥234c、APC閥235c之閥開度，而將處理室201內之壓力設為既定之壓力。
對成膜步驟S140進行說明。此處，對成膜步驟S140之基本流程進行說明，詳細情況將於下文敍述。於成膜步驟S140中，各基板S係於第一處理區域206a形成含矽層，進而於旋轉後之第二處理區域206b，含有矽之層與氨氣反應，於基板S上形成氮化矽膜。以成為所期望之膜厚之方式，使基板載置部旋轉既定次數。
對氣體供給停止步驟S150進行說明。於旋轉既定次數之後，關閉閥244、254，停止向第1處理區域206a之Si2 H2 Cl2 氣體之供給、向第2處理區域206b之NH3 氣體之供給。
對基板載置板旋轉停止步驟S160進行說明。於氣體供給停止S150之後，停止基板載置板217之旋轉。
對基板搬出步驟S170進行說明。以使基板S移動至與閘閥205對向之位置之方式使基板載置板旋轉。然後，與基板搬入時同樣地使基板S支持於銷219上。於支持後打開閘閥205，使用未圖示之基板移載機將基板S向容器203之外搬出。將該操作按所處理之基板S之片數進行重複，將所有基板S搬出。於搬出後，停止利用第一惰性氣體供給部260、第二惰性氣體供給部270進行之惰性氣體之供給。
繼而，使用圖12對成膜步驟S140之詳細情況進行說明。再者，自第1處理區域206a通過步驟S210至第2沖洗區域通過步驟S240為止，主要說明載置於基板載置部217上之數個基板S中之一片基板S。
如圖12所示，於成膜步驟S140中，藉由基板載置板217之旋轉，而使數個基板S依序通過第1處理區域206a、第1沖洗區域207a、第2處理區域206b、及第2沖洗區域207b。
對第1處理區域通過S210進行說明。於基板S通過第1處理區域206a時，將Si2 H2 Cl2 氣體供給至基板S。此時，由於在第1處理區域206a內無反應氣體，故而Si2 H2 Cl2 氣體不會與反應氣體反應而是直接接觸(附著)基板S之表面。藉此，於基板S之表面，形成第1層。
對第1沖洗區域通過S220進行說明。基板S於通過第1處理區域206a之後，移動至第1沖洗區域207a。於基板S通過第1沖洗區域207a時，於第1處理區域206a中無法於基板S上形成牢固之鍵之Si2 H2 Cl2 之成分藉由惰性氣體而自基板S上去除。
對第2處理區域通過S230進行說明。基板S於通過第1沖洗區域207a之後，移動至第2處理區域206b。於基板S通過第2處理區域206b時，於第2處理區域206b中，第1層與作為反應氣體之氨氣反應。藉此，於基板S之上，形成至少包含Si及N之第2層。
對第2沖洗區域通過S240進行說明。基板S於通過第2處理區域206b之後，移動至第2沖洗區域207b。於基板S通過第2沖洗區域207b時，於第2處理區域206c中自基板S上之第3層脫離之HCl或剩餘之H2 氣體等藉由惰性氣體而自基板S上去除。
如此，對基板依序供給相互反應之至少2種反應氣體。將以上之第1處理區域通過S210、第1沖洗區域通過S220、第2處理區域通過S230、及第2沖洗區域通過S240設為1個循環。
對判定S250進行說明。控制器300判定是否將上述1個循環實施既定次數。具體而言，控制器300計數基板載置板217之旋轉數。
於未將上述1個循環實施既定次數時(於S250中為否之情況)，進而使基板載置板217之旋轉繼續，重複具有第1處理區域通過S210、第1沖洗區域通過S220、第2處理區域通過S230、第2沖洗區域通過S240之循環。藉由如此積層而形成薄膜。
於將上述1個循環實施既定次數時(於S250中為是之情況)，結束成膜步驟S140。如此，藉由將上述1個循環實施既定次數，而形成所積層之既定膜厚之薄膜。
再者，於本實施形態中，作為反應氣體以氨氣為例進行了說明，但並不限定於此。
以上，對本發明之實施形態具體地進行了說明，但本發明並不限定於上述實施形態，於不脫離其主旨之範圍內能夠進行各種變更。
又，於上述實施形態中，對使用Si2 H2 Cl2 氣體作為原料氣體，使用氨氣作為反應氣體，於基板S上形成SiN膜作為氮化膜之情況下進行了說明，但亦可使用SiH4 、Si2 H6 、Si3 H8 、胺基矽烷、TSA氣體等作為原料氣體。亦可使用O2 氣體作為反應氣體，形成氧化膜。亦可於基板S上形成TaN、TiN等其他氮化膜、HfO、ZrO、SiO等氧化膜、Ru、Ni、W等金屬膜。再者，於形成TiN膜或TiO膜之情況下，作為原料氣體，例如可使用四氯化鈦(TiCl4 )等。
S:基板 200:反應器 201:處理室 203、204:容器 205:閘閥 206:處理區域 206a:第1處理區域 206b:第2處理區域 207:沖洗區域 207a:第1沖洗區域 207b:第2沖洗區域 208、208a、208b、209:頂壁 217:基板載置板 217a:貫通孔 217b:凹部 218:基板保持機構 219:銷 221:芯部 222:軸 223:孔 224:旋轉部 225、290:石英蓋 226、293、295、296、297、298、403:熱衰減部 234、235:排氣部 234a、235a:排氣管 234b、235b:真空泵 234c、235c:APC閥 234d、235d、244、254、264、274:閥 240、250:原料氣體供給部 241、251:氣體供給管 242:原料氣體供給源 243、253、263、273:MFC 245、255、265、266:噴嘴 252:反應氣體供給源 260:第1惰性氣體供給部 261、271、275:惰性氣體供給管 262、272:惰性氣體供給源 270:惰性氣體供給部 280:加熱器 281:加熱器單元 282:內周凸部 282a:凸緣 283:外周凸部 284、299:空間 285:窗 286:排氣構造 286a:上部 287:加熱器控制部 288:排氣槽 289:排氣緩衝空間 291、292:排氣口 300:控制器(控制部) 301:CPU 302:暫時記憶部 303:記憶部 304、311:收發部 312:外部記憶裝置 313:輸入輸出裝置 320:上位裝置 401:石英 402:金屬 404、405、406、407、411、412、413:電磁波
圖1係本發明之實施形態之基板處理裝置所具備之反應器之橫剖面概略圖。 圖2係本發明之實施形態之基板處理裝置所具備之反應器之縱剖面概略圖，且係圖1所示之反應器之A-A'線剖面圖。 圖3係說明本發明之實施形態之基板支持機構之說明圖。 圖4係說明金屬之吸收率之說明圖。 圖5(a)及(b)係說明本發明之實施形態之熱衰減部之說明圖。 圖6係說明本發明之實施形態之原料氣體供給部之說明圖。 圖7係說明本發明之實施形態之反應氣體供給部之說明圖。 圖8係說明本發明之實施形態之第一惰性氣體供給部之說明圖。 圖9係說明本發明之實施形態之第二惰性氣體供給部之說明圖。 圖10係說明本發明之實施形態之控制器之說明圖。 圖11係說明本發明之實施形態之基板處理步驟之流程圖。 圖12係說明本發明之實施形態之基板處理步驟之流程圖。
S:基板
200:反應器
201:處理室
203、204:容器
206:處理區域
206b:第2處理區域
207:沖洗區域
207a:第1沖洗區域
208、208a、209:頂壁
217:基板載置板
217a:貫通孔
217b:凹部
221:芯部
222:軸
223:孔
224:旋轉部
225、290:石英蓋
226、293、295、296、297、298:熱衰減部
235:排氣部
275:惰性氣體供給管
280:加熱器
281:加熱器單元
282:內周凸部
282a:凸緣
283:外周凸部
284、299:空間
285:窗
286:排氣構造
286a:上部
287:加熱器控制部
288:排氣槽
289:排氣緩衝空間
292:排氣口

Claims (14)

  1. 一種基板處理裝置，其具有：金屬製之容器，其具有處理基板之處理室；基板載置板，其設置為可於上述容器內旋轉，且於上表面呈圓周狀地配置有數個基板載置面；加熱部，其將載置於上述數個基板載置面之基板加熱；熱衰減部，其設置於上述加熱部與上述容器之間；氣體供給部，其對上述處理室供給氣體；及支持部，其使上述基板載置板旋轉；上述支持部具有：金屬製之芯部，其固定上述基板載置板；及第二蓋，其配置於上述芯部與上述處理室之間；上述熱衰減部構成為設置於上述第二蓋，並且隔著空間而與上述芯部相鄰。
  2. 如請求項1之基板處理裝置，其中，於上述容器之底部，設置有加熱器單元，該加熱器單元係上述處理室與環境氣體隔離，且包含金屬壁、石英製之窗及上述加熱部；上述熱衰減部配置於上述加熱部與上述金屬壁之間。
  3. 如請求項2之基板處理裝置，其中，於上述容器之底部，設置有金屬製之排氣構造及與上述排氣構造相鄰之第一蓋，上述熱衰減部設置於上述第一蓋中與上述排氣構造對向之側。
  4. 如請求項3之基板處理裝置，其中， 上述熱衰減部與上述排氣構造之間隔著空間而相鄰。
  5. 如請求項4之基板處理裝置，其中，上述熱衰減部構成為於表面塗覆石英之微粒子而成之蓋。
  6. 如請求項3之基板處理裝置，其中，上述熱衰減部構成為於表面塗覆石英之微粒子而成之蓋。
  7. 如請求項2之基板處理裝置，其中，上述熱衰減部構成為於表面塗覆石英之微粒子而成之蓋。
  8. 如請求項1之基板處理裝置，其中，於上述容器之底部，設置有金屬製之排氣構造及與上述排氣構造相鄰之第一蓋，上述熱衰減部設置於上述第一蓋中與上述排氣構造對向之側。
  9. 如請求項8之基板處理裝置，其中，於上述熱衰減部與上述排氣構造之間設置有空間。
  10. 如請求項9之基板處理裝置，其中，上述熱衰減部構成為於表面塗覆石英之微粒子而成之蓋。
  11. 如請求項8之基板處理裝置，其中，上述熱衰減部構成為於表面塗覆石英之微粒子而成之蓋。
  12. 如請求項1之基板處理裝置，其中，上述熱衰減部構成為於表面塗覆石英之微粒子而成之蓋。
  13. 一種半導體裝置之製造方法，其具有如下步驟：將基板搬送至設置於金屬製之容器的處理室之步驟；將上述基板載置於基板載置板之步驟，該基板載置板設置為可於上述容器 內旋轉，且於上表面呈圓周狀地配置有數個基板載置面；以及使上述基板載置板旋轉，且由氣體供給部對上述處理室供給氣體，並且設置於上述容器與加熱部之間的熱衰減部使從加熱部向上述容器之熱能衰減，且上述加熱部將上述基板加熱之步驟。
  14. 一種程式，其藉由電腦使基板處理裝置執行如下程序：將基板搬送至設置於金屬製之容器的處理室之程序；將上述基板載置於基板載置板之程序，該基板載置板設置為可於上述容器內旋轉，且於上表面呈圓周狀地配置有數個基板載置面；以及使上述基板載置板旋轉，且由氣體供給部對上述處理室供給氣體，並且設置於上述容器與加熱部之間的熱衰減部使從加熱部向上述容器之熱能衰減，且上述加熱部將上述基板加熱之程序。
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