CN111668153A - 基板载体设备、基板处理设备以及调节基座温度的方法 - Google Patents
基板载体设备、基板处理设备以及调节基座温度的方法 Download PDFInfo
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Abstract
一种基板处理设备的示例包括:基板载体设备,其包括轴、固定在轴上并配置为随着轴旋转而旋转的至少一个载体臂和固定在载体臂上的至少一个温度计;基座;加热器,其加热基座;温度调节器,其控制加热器;以及控制单元,其通过使载体臂靠近基座获取由温度计获得的基座的测量温度并控制温度调节器,该测量温度是表面温度。
Description
技术领域
描述的示例涉及基板载体设备、基板处理设备以及调节基座温度的方法。
背景技术
晶片处理条件之一是基座加热器(以下有时简称为加热器)的温度设定。进行加热器的温度设定以将基座上的基板的温度设定在期望的温度。为了将基板的温度设定在期望的温度,基于具有偏移的参考值来控制加热器。
确定偏移可能需要很长时间。例如,执行一系列操作,包括将室中的压力升高至大气压,降低基座的温度,打开室,将带有其中嵌入温度计的温度测量晶片放置在基座上,关闭室,升高基座的温度,将室中的压力降低至接近真空的压力,测量温度测量晶片的温度并从室中取出温度测量晶片。
将温度测量晶片的测量温度与配方(recipe)中指定的所需晶片处理温度之间的差距值记录为偏移数据。在处理产品基板时,基于偏移数据修改所需晶片处理温度。
然而,使用上述温度测量晶片的方法涉及较长的停机时间用于打开和关闭室以及升高和降低室中的温度,因此不能频繁执行。为此,通过利用更换加热器的机会来更新偏移数据。因此,即使加热器的温度和基板的温度之间的差随着设备的状态随时间变化而变化,偏移数据也会继续使用。结果,可能在长时间不理想的温度下处理基板。
发明内容
本文描述的一些示例可以解决上述问题。本文描述的一些示例可以提供允许将基板的温度设定在期望温度的基板载体设备、基板处理设备以及调节基座温度的方法。
在一些示例中,基板载体设备包括轴、固定在轴上并配置为随着轴旋转而旋转的至少一个载体臂以及固定在载体臂上的至少一个温度计。
附图说明
图1是表示基板处理设备的示例的平面图;
图2是表示基板处理设备的示例的侧视图;
图3是载体臂的剖视图;
图4是表示载体臂的示例的平面图;
图5表示温度计的布置的示例;
图6表示用于轴的旋转的布置的示例;
图7是流程图;以及
图8是通过映射获得的数据的图示。
具体实施方式
参照附图,对基板载体设备、基板处理设备以及调节基座温度的方法进行描述。相同或相应的部件将由相同的附图标记表示,并且可以省略其冗余描述。
图1是示出基板处理设备的配置的示例的平面图。基板处理设备包括基座10、12、14和16。基板处理设备包括将基板供应到基座10、12、14和16并从基座10、12、14和16移除基板的基板载体设备20。基板载体设备20可包括轴20A和固定在轴20A上并随着轴20A旋转而旋转的载体臂20B、20C、20D和20E。基板载体设备20具有至少一个载体臂。随着轴20A旋转,载体臂20B、20C、20D和20E绕轴20A旋转。载体臂20B、20C、20D和20E在x-y平面中移动。
上述布置被包围在壳体22中。例如,基板处理设备可以是四室模块(QCM)。QCM可以在保持在相同温度的四个基座10、12、14和16上的四个基板上执行相同的处理。在基板上执行的处理例如可以是使用等离子体的膜沉积、使用等离子体的蚀刻或通过等离子体的膜改性。
晶片处理室30位于与基板处理设备相邻。在晶片处理室30中,臂32承载基板。例如,可以将由臂32保持的基板提供给基板处理设备,或者可以用臂32将基板从基板处理设备内部移除。
图2是表示基板处理设备的配置的示例的侧视图。温度计40、42、44、46和48固定在载体臂20E上。温度计40、42、44、46和48可以是例如热电偶或电阻温度传感器。至少一个温度计可以固定到载体臂20E。在另一示例中,可以使用不同数量的温度计。如上所述,基板载体设备具有轴20A、载体臂20B、20C、20D和20E以及温度计40、42、44、46和48。
图1所示的载体臂20B、20C、20D和20E中仅一个可以设置有温度计。在图2所示的载体臂20B、20C、20D和20E的示例中,仅载体臂20E具有固定在其上的温度计。在另一示例中,多个载体臂全部都可以设置有温度计。可以在一个载体臂上设置多个温度计,或者可以在一个载体臂上设置一个温度计。
图2示出了基座10和固定在基座10上的加热器10a。加热器10a可以设置在用于加热基座10的任何位置。例如,加热器10a可以嵌入基座10中或设置在基座10的下表面上。所有基座10、12、14和16可设置有加热器。加热器10a由温度调节器54控制。温度调节器54从唯一平台控制器(UPC)52接收关于加热器10a的温度的命令,并根据该命令使加热器10a通电。
在一示例中,当载体臂20E位于基座10的正上方时,固定在载体臂20E上的所有温度计40、42、44、46和48位于基座10的正上方。类似地,当载体臂20E位于基座12、14或16的正上方时,所有温度计40、42、44、46和48位于基座12、14或16的正上方。
传送单元50连接到温度计40、42、44、46和48。在一示例中,传送单元50将来自温度计40、42、44、46和48的测量结果转换为数字数据,并将数字数据发送到控制单元。作为控制单元的示例,提供了传送模块控制器(TMC)33和UPC52。在一示例中,传送单元50通过无线通信将关于测量结果(以下有时称为测量温度)的数字数据发送到TMC33。TMC33将关于测量结果的数字数据传送到UPC52。UPC52基于测量温度和在获得测量温度时的时间处的加热器10a的温度根据配方更新所需晶片处理温度的偏移,以使基座10的表面温度接近目标温度。UPC52根据配方和更新的偏移向温度调节器54发出包括所需晶片处理温度的命令。然后,可以用更新的偏移来控制温度调节器54。
图3是载体臂20E的剖视图。温度计40、42、44、46和48可以暴露在载体臂20E的后表面上。在另一示例中,温度计40、42、44、46和48可从载体臂20E的后表面朝向基座10突出。在另一示例中,可以在载体臂20E的后表面中形成凹部,并且温度计40、42、44、46和48可以在凹部中突出。
图4是示出载体臂的配置的示例的平面图。载体臂20E包括连接至轴20A的主体部20a、第一分支部20b、第二分支部20c和延伸部20d。第一分支部20b和第二分支部20c是从主体部20a分支的部分。延伸部20d连接到主体部20a,并且位于距轴20A比主体部20a更远。在一示例中,延伸部20d与主体部20a和第一分支部20b之间的连接相邻。当载体臂20E旋转时,主体部20a和延伸部20d可以在基座10、12、14和16的正上方穿过。图4示出了在载体臂20E旋转期间位于基座14正上方的主体部20a和延伸部20d。
图5示出了温度计40、42、44、46和48的布置的示例。暴露在载体臂20E的后表面上的温度计40、42、44、46和48不应在该平面图中可见,从而图5示出了温度计40、42、44、46和48暴露在载体臂20E的后表面上的位置,以供参考。温度计42、44、46和48可以固定到主体部20a并且暴露在主体部20a的后表面上,温度计40可以固定到延伸部20d并且暴露在延伸部20d的后表面上。图5中的虚线示出了在载体臂20E的旋转期间温度计40、42、44、46和48的轨迹的示例。温度计40、42、44、46和48在基座14的正上方通过,从而可以在由五个虚线指示的位置处测量基座14的温度。
图6示出了用于轴20A的旋转的布置的示例。轴20A延伸穿过轴承62,在它们之间插入有磁性密封件64。轴承62可以保持在室60上。室60中存在真空,室60的环境压力为大气压。当电动机61响应于来自TMC33的命令使轴20A旋转时,载体臂以由磁性密封件64保持的室60的外部和内部之间的压差旋转。
图7是示出调节基座温度的方法的示例的流程图。首先,在步骤S1中,执行第一基板过程。基板过程例如可以包括:用载体臂20B、20C、20D和20E将基板放置在基座10、12、14和16上;在基板上执行处理;以及用载体臂20B、20C、20D和20E将基板从基座10、12、14和16中移除。对于基板过程,温度调节器54响应于来自UPC52的命令将加热器10a设定在预定温度。更具体地,将包括具有旨在使基座10的表面温度接近目标温度的预定偏移的根据配方的所需晶片处理温度的命令发送到温度调节器54。根据具有偏移的“根据配方的所需晶片处理温度”,温度调节器54升高加热器10a的温度。例如,可以在相同温度下用四个基座10、12、14和16执行基板过程。
然后,处理进入步骤S2。在步骤S2中,通过固定在载体臂20E上的至少一个温度计来测量基座10、12、14和16的表面温度。在一示例中,可以在载体臂20E旋转的同时测量多个基座10、12、14和16的表面温度。载体臂20E的旋转速度可以低于3.53秒/180°。为了提高温度测量的准确性,载体臂的旋转速度可以等于或小于10秒/180°。载体臂的降低的旋转速度提供准确的测量温度。鉴于此,可以随着由温度计获得的测量温度与目标温度之间的差的增大而减小载体臂20E的旋转速度。在基座的表面温度的测量中,温度计40、42、44、46和48与基座之间的距离可以等于或小于4mm。
在另一示例中,可以通过使载体臂20E靠近基座来测量基座的表面温度。更具体地,通过使载体臂靠近基座而不旋转载体臂来测量温度。这种测量方法可有助于加快测量速度。
如果在载体臂旋转的同时测量基座的表面温度,则可以执行基座的表面温度的映射。图8是通过映射获得的数据的图示。在图8所示的示例中,五个温度计读取不同的表面温度。
如果仅将温度计固定在载体臂20E上,则可以通过将载体臂20E旋转360°来测量所有基座的表面温度。另一方面,如果将温度计固定在所有的载体臂20B、20C、20D和20E上,则可以通过将载体臂旋转仅90°来测量所有基座的表面温度。
在载体臂不旋转的情况下的表面温度的测量中,通过使载体臂靠近基座来测量基座的表面温度,然后在测量另一基座的表面温度之前旋转载体臂。如果将温度计固定到所有载体臂20B、20C、20D和20E,则可以通过同时使载体臂靠近不同的基座来同时测量所有基座的表面温度。
在一示例中,如果测量温度未落在预定范围内,则过程停止,并且可以给出异常通知。例如,如果温度测量系统发生故障或基座发生裂缝,则过程停止,并且将异常通知给用户,以使问题得到解决。
然后,处理进入步骤S3。在步骤S3中,UPC52将来自温度计的测量温度与预定目标温度进行比较。例如,目标温度可以是根据配方的所需晶片处理温度。在一示例中,UPC52确定测量温度与目标温度之间的差是否大于预定值。例如,如果测量温度为455℃,目标温度为450℃,并且可允许的差的最大值为±2℃,则UPC52确定需要更新目标温度的偏移数据。偏移数据可以存储在UPC52中的配置文件中的参数文件中。
然后,处理进入步骤S4。如果在步骤S3中确定需要更新偏移数据,则在步骤S4中更新偏移数据。在上述示例中,由于测量温度为455℃且目标温度为450℃,因此偏移数据被更新为“-5℃”。在该示例中,用于更新偏移数据的条件是测量温度与目标温度之间的差大于预定值。然而,在另一示例中,只要测量温度不等于目标温度,就可以更新偏移数据。
在图7中,步骤S2、S3和S4中的一系列处理示出为针对偏移数据的更新过程1。
然后,处理进入步骤S5。在步骤S5中,执行第二基板过程。除了加热器10a的温度之外,基板过程可以与第一基板过程相同。在第二基板过程中,由于目标温度为450℃并且偏移数据为-5℃,从而UPC52指示温度调节器54将加热器10a的温度设定在445℃。然后,基座的温度变为445℃,并且测量温度更接近450℃,其是目标温度。
如上所述,修改了加热器10a的控制的细节以减小来自温度计的测量温度与目标温度之间的差。在该示例中,当差大于预定值时,修改加热器的控制的细节。因此,因此可以避免由于对加热器的控制的细节进行了频繁的修改使处理复杂化。更新偏移数据仅仅是修改加热器的控制的细节的方式的示例,并且可以以其他方式修改加热器的控制的细节。
在第二基板过程结束之后,在步骤S6、S7和S8中再次执行用于偏移数据的更新过程。步骤S6、S7和S8的细节基本上与步骤S2、S3和S4的细节相同。在该更新过程(称为更新过程2)中,如有必要,更新偏移数据。
在步骤S9中,执行第三基板过程。除了可以修改加热器的温度之外,基板过程的细节可以与第一基板过程的细节相同。在第三基板过程中,UPC52向温度调节器54发出反映最新偏移数据的命令。然后,基板的温度更接近450℃,其是目标温度。
与确定涉及在基座上放置专用温度测量晶片的偏移数据的任务相比,在多个基板过程之间执行基座的表面温度的测量非常简单。用于偏移数据的更新过程可以在每个基板过程之间或者在基板过程之间的特定时刻执行。
为了维持图6所示的磁性密封件64,例如,除了使轴20A旋转来承载基板的机会以外,还要求基板处理设备使轴20A以规则间隔旋转。轴20A以规则间隔的旋转可以说是维护操作。维护操作涉及在载体臂20B、20C、20D和20E不承载基板的状态下旋转轴20A以旋转固定至轴20A的载体臂20B、20C、20D和20E。涉及以规则间隔旋转轴20A的维护操作抑制了磁性密封件64的劣化。
在步骤S10中,在轴20A以规则间隔的旋转之一期间,用固定在载体臂上的温度计来测量基座的表面温度。换句话说,在维护操作期间测量基座的表面温度。在步骤S11和S12中,如果需要,以与上述更新过程1和2相同的方式来更新偏移数据。在一示例中,包括步骤S10、S11和S12的该更新过程(称为更新过程3)在维护操作期间结束。
更新过程3与维护操作并行进行,从而可以防止由于更新过程而延迟基板过程。在步骤S13中,执行反映最新偏移数据的第四基板过程。
根据涉及以适当频率更新偏移数据的调节基座温度的方法,可以使处理后的基板的实际温度和根据配方的所需晶片处理温度彼此一致或彼此接近。
图2所示的TMC33和UPC52用作控制单元,其获取由温度计获得的基座的测量温度(其是表面温度)并控制温度调节器54。控制单元可以是单个集成控制器。
Claims (20)
1.一种基板载体设备,包括:
轴;
至少一个载体臂,其固定在轴上并配置为随着轴旋转而旋转;以及
至少一个温度计,其固定在载体臂上。
2.根据权利要求1所述的基板载体设备,其中,所述载体臂是多个载体臂中的一个,所述温度计设置在多个载体臂中的一个上。
3.根据权利要求1所述的基板载体设备,其中,所述载体臂是多个载体臂中的一个,所述多个载体臂全部都设置有所述温度计。
4.根据权利要求1所述的基板载体设备,其中,所述温度计是多个温度计中的一个,多个温度计固定在每个载体臂上。
5.根据权利要求1至4中任一项所述的基板载体设备,其中,所述温度计暴露在所述载体臂的后表面上。
6.根据权利要求1所述的基板载体设备,其中,所述载体臂包括:与所述轴连接的主体部;从所述主体部分支的分支部;以及延伸部,其与主体部连接并且位于距所述轴比主体部更远,
所述温度计是多个温度计中的一个,并且
所述温度计固定在所述主体部和延伸部上。
7.根据权利要求1至4中任一项所述的基板载体设备,其中,所述温度计是热电偶或电阻温度传感器。
8.一种基板处理设备,包括:
基板载体设备,其包括轴、固定在轴上并配置为随着轴旋转而旋转的至少一个载体臂和固定在载体臂上的至少一个温度计;
基座;
加热器,其配置为加热基座;
温度调节器,其配置为控制加热器;以及
控制单元,其配置为获取由温度计获得的基座的测量温度并控制温度调节器,该测量温度是表面温度。
9.根据权利要求8所述的基板处理设备,其中,所述基板处理设备包括传送单元,其将来自所述温度计的测量结果转换为数字数据,并将所述数字数据发送至所述控制单元。
10.根据权利要求8所述的基板处理设备,其中,所述控制单元基于测量温度和在获得测量温度时的加热器的温度以更新的偏移来控制所述温度调节器,以使所述表面温度接近目标温度。
11.一种调节基座温度的方法,包括:
用固定在载体臂上的至少一个温度计测量基座的表面温度;以及
修改加热基座的加热器的控制的细节,以减小由温度计获得的测量温度与目标温度之间的差。
12.根据权利要求11所述的调节基座温度的方法,其中,如果所述差大于预定值,则修改所述控制。
13.根据权利要求11所述的调节基座温度的方法,其中,在所述表面温度的测量中,在所述载体臂旋转的同时测量多个基座的表面温度。
14.根据权利要求13所述的调节基座温度的方法,其中,随着所述温度计获得的测量温度与目标温度之间的差的增大,所述载体臂的旋转速度减小。
15.根据权利要求11所述的调节基座温度的方法,其中,在所述表面温度的测量中,执行所述基座的表面温度的映射。
16.根据权利要求11所述的调节基座温度的方法,其中,在所述表面温度的测量中,使所述载体臂靠近所述基座。
17.根据权利要求11所述的调节基座温度的方法,其中,在所述控制的修改中,用于控制所述加热器的偏移被更新。
18.根据权利要求11至17中任一项所述的调节基座温度的方法,其中,所述方法还包括执行多次基板过程,所述基板过程包括用载体臂将基板放置在基座上,在基板上执行处理,并且用载体臂将基板从基座移除;以及
在基板过程之间执行所述表面温度的测量。
19.根据权利要求11所述的调节基座温度的方法,其中,如果测量温度不在预定范围内,则发出异常通知。
20.根据权利要求11所述的调节基座温度的方法,其中,所述方法还包括执行维护操作,该维护操作涉及在载体臂不承载基板的状态下旋转穿过轴承延伸的轴,以旋转固定在所述轴上的载体臂,磁性密封件介于所述轴和轴承之间;以及
在维护操作期间执行所述表面温度的测量。
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