CN111656540B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN111656540B CN111656540B CN201880087698.1A CN201880087698A CN111656540B CN 111656540 B CN111656540 B CN 111656540B CN 201880087698 A CN201880087698 A CN 201880087698A CN 111656540 B CN111656540 B CN 111656540B
- Authority
- CN
- China
- Prior art keywords
- light receiving
- light
- light emitting
- receiving element
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Bipolar Transistors (AREA)
- Noodles (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-012842 | 2018-01-29 | ||
| JP2018012842A JP6620176B2 (ja) | 2018-01-29 | 2018-01-29 | 半導体装置 |
| PCT/JP2018/047287 WO2019146339A1 (ja) | 2018-01-29 | 2018-12-21 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111656540A CN111656540A (zh) | 2020-09-11 |
| CN111656540B true CN111656540B (zh) | 2023-06-13 |
Family
ID=67395853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880087698.1A Active CN111656540B (zh) | 2018-01-29 | 2018-12-21 | 半导体装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6620176B2 (https=) |
| KR (1) | KR102459822B1 (https=) |
| CN (1) | CN111656540B (https=) |
| TW (1) | TWI785195B (https=) |
| WO (1) | WO2019146339A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7189994B2 (ja) * | 2021-04-16 | 2022-12-14 | アオイ電子株式会社 | 半導体装置およびその製造方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001250978A (ja) * | 2000-03-08 | 2001-09-14 | Sharp Corp | 光結合素子 |
| JP2004063764A (ja) * | 2002-07-29 | 2004-02-26 | Toshiba Corp | 光結合半導体装置、およびその製造方法 |
| JP3684823B2 (ja) * | 1998-03-26 | 2005-08-17 | 松下電工株式会社 | 半導体リレー |
| JP2005283457A (ja) * | 2004-03-30 | 2005-10-13 | Olympus Corp | 光学式エンコーダ及びその製造方法 |
| CN101872761A (zh) * | 2009-04-23 | 2010-10-27 | 欧姆龙株式会社 | 光耦合装置 |
| CN104396026A (zh) * | 2012-06-20 | 2015-03-04 | 青井电子株式会社 | 光源一体型光传感器 |
| JP2015095584A (ja) * | 2013-11-13 | 2015-05-18 | ローム株式会社 | 光学装置、光学装置の製造方法 |
| CN104916728A (zh) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | 光耦合装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6132535A (ja) * | 1984-07-25 | 1986-02-15 | Sanyo Electric Co Ltd | センサの製造方法 |
| JPH06204508A (ja) * | 1992-12-28 | 1994-07-22 | Canon Inc | 光学式検出装置 |
| JP3573400B2 (ja) * | 1997-07-16 | 2004-10-06 | シャープ株式会社 | 光学式入力装置 |
| JP4812189B2 (ja) * | 2001-06-15 | 2011-11-09 | オリンパス株式会社 | 光学式検出装置 |
| EP1376960A1 (en) | 2002-06-29 | 2004-01-02 | Deutsche Thomson-Brandt Gmbh | Data link layer device with two transmission modes for a serial communication bus |
| JP2005038956A (ja) * | 2003-07-17 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 光部品とその製造方法 |
| JP4021382B2 (ja) * | 2003-07-28 | 2007-12-12 | オリンパス株式会社 | 光学式エンコーダ及びその製造方法並びに光学レンズモジュール |
| KR101069197B1 (ko) * | 2009-09-25 | 2011-09-30 | 전자부품연구원 | 발광 및 수광 소자가 일체로 형성된 패키지 모듈 |
| EP2860497B2 (de) * | 2013-10-09 | 2019-04-10 | SICK STEGMANN GmbH | Optoelektronischer Sensor und Verfahren zur Herstellung eines solchen |
| US10199412B2 (en) * | 2014-07-25 | 2019-02-05 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules including an image sensor having regions optically separated from one another |
-
2018
- 2018-01-29 JP JP2018012842A patent/JP6620176B2/ja active Active
- 2018-12-21 KR KR1020207018716A patent/KR102459822B1/ko active Active
- 2018-12-21 WO PCT/JP2018/047287 patent/WO2019146339A1/ja not_active Ceased
- 2018-12-21 CN CN201880087698.1A patent/CN111656540B/zh active Active
-
2019
- 2019-01-28 TW TW108103065A patent/TWI785195B/zh active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3684823B2 (ja) * | 1998-03-26 | 2005-08-17 | 松下電工株式会社 | 半導体リレー |
| JP2001250978A (ja) * | 2000-03-08 | 2001-09-14 | Sharp Corp | 光結合素子 |
| JP2004063764A (ja) * | 2002-07-29 | 2004-02-26 | Toshiba Corp | 光結合半導体装置、およびその製造方法 |
| JP2005283457A (ja) * | 2004-03-30 | 2005-10-13 | Olympus Corp | 光学式エンコーダ及びその製造方法 |
| CN101872761A (zh) * | 2009-04-23 | 2010-10-27 | 欧姆龙株式会社 | 光耦合装置 |
| CN104396026A (zh) * | 2012-06-20 | 2015-03-04 | 青井电子株式会社 | 光源一体型光传感器 |
| JP2015095584A (ja) * | 2013-11-13 | 2015-05-18 | ローム株式会社 | 光学装置、光学装置の製造方法 |
| CN104916728A (zh) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | 光耦合装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6620176B2 (ja) | 2019-12-11 |
| KR20200090239A (ko) | 2020-07-28 |
| TW201941447A (zh) | 2019-10-16 |
| JP2019133994A (ja) | 2019-08-08 |
| KR102459822B1 (ko) | 2022-10-26 |
| TWI785195B (zh) | 2022-12-01 |
| CN111656540A (zh) | 2020-09-11 |
| WO2019146339A1 (ja) | 2019-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2750181B1 (en) | Optical semiconductor device | |
| KR101120341B1 (ko) | 고체 촬상 장치 및 그의 제조 방법 | |
| CN100423276C (zh) | 半导体装置及其制造方法 | |
| CN101569023A (zh) | 用于光电子器件的壳体和光电子器件在壳体中的布置 | |
| US7273765B2 (en) | Solid-state imaging device and method for producing the same | |
| US8680659B2 (en) | Semiconductor device | |
| US12230618B2 (en) | Optical sensor, and method for manufacturing optical sensor | |
| JP2008092417A (ja) | 半導体撮像素子およびその製造方法並びに半導体撮像装置および半導体撮像モジュール | |
| CN106952899B (zh) | 光学模块及其制造方法 | |
| JP2011054925A (ja) | 光学デバイス、固体撮像装置、及び方法 | |
| US20160190397A1 (en) | Led package structure and the manufacturing method of the same | |
| CN102347435A (zh) | 半导体装置 | |
| CN102511116A (zh) | 光通信模块 | |
| CN101241920A (zh) | 光学器件及其制造方法 | |
| US7928547B2 (en) | Optical semiconductor device | |
| CN111656540B (zh) | 半导体装置 | |
| JP7652638B2 (ja) | 半導体装置、その製造方法および基板 | |
| CN100429766C (zh) | 电路装置及其制造方法 | |
| JP4147171B2 (ja) | 固体撮像装置およびその製造方法 | |
| CN101595558B (zh) | 半导体装置的制造方法、拾光模块以及半导体装置 | |
| JPS60153184A (ja) | 受光素子 | |
| CN117913149A (zh) | 感测器封装结构及其制造方法 | |
| CN117136440A (zh) | 半导体装置及其制造方法 | |
| US10573677B2 (en) | Semiconductor device on which a transparent plate is disposed for exposing an element region | |
| US20220109282A1 (en) | Method for obtaining electronic devices and electronic devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |