CN111656540B - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN111656540B
CN111656540B CN201880087698.1A CN201880087698A CN111656540B CN 111656540 B CN111656540 B CN 111656540B CN 201880087698 A CN201880087698 A CN 201880087698A CN 111656540 B CN111656540 B CN 111656540B
Authority
CN
China
Prior art keywords
light receiving
light
light emitting
receiving element
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880087698.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN111656540A (zh
Inventor
黑羽淳史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aoi Electronics Co Ltd
Original Assignee
Aoi Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aoi Electronics Co Ltd filed Critical Aoi Electronics Co Ltd
Publication of CN111656540A publication Critical patent/CN111656540A/zh
Application granted granted Critical
Publication of CN111656540B publication Critical patent/CN111656540B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
CN201880087698.1A 2018-01-29 2018-12-21 半导体装置 Active CN111656540B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-012842 2018-01-29
JP2018012842A JP6620176B2 (ja) 2018-01-29 2018-01-29 半導体装置
PCT/JP2018/047287 WO2019146339A1 (ja) 2018-01-29 2018-12-21 半導体装置

Publications (2)

Publication Number Publication Date
CN111656540A CN111656540A (zh) 2020-09-11
CN111656540B true CN111656540B (zh) 2023-06-13

Family

ID=67395853

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880087698.1A Active CN111656540B (zh) 2018-01-29 2018-12-21 半导体装置

Country Status (5)

Country Link
JP (1) JP6620176B2 (https=)
KR (1) KR102459822B1 (https=)
CN (1) CN111656540B (https=)
TW (1) TWI785195B (https=)
WO (1) WO2019146339A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7189994B2 (ja) * 2021-04-16 2022-12-14 アオイ電子株式会社 半導体装置およびその製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001250978A (ja) * 2000-03-08 2001-09-14 Sharp Corp 光結合素子
JP2004063764A (ja) * 2002-07-29 2004-02-26 Toshiba Corp 光結合半導体装置、およびその製造方法
JP3684823B2 (ja) * 1998-03-26 2005-08-17 松下電工株式会社 半導体リレー
JP2005283457A (ja) * 2004-03-30 2005-10-13 Olympus Corp 光学式エンコーダ及びその製造方法
CN101872761A (zh) * 2009-04-23 2010-10-27 欧姆龙株式会社 光耦合装置
CN104396026A (zh) * 2012-06-20 2015-03-04 青井电子株式会社 光源一体型光传感器
JP2015095584A (ja) * 2013-11-13 2015-05-18 ローム株式会社 光学装置、光学装置の製造方法
CN104916728A (zh) * 2014-03-14 2015-09-16 株式会社东芝 光耦合装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132535A (ja) * 1984-07-25 1986-02-15 Sanyo Electric Co Ltd センサの製造方法
JPH06204508A (ja) * 1992-12-28 1994-07-22 Canon Inc 光学式検出装置
JP3573400B2 (ja) * 1997-07-16 2004-10-06 シャープ株式会社 光学式入力装置
JP4812189B2 (ja) * 2001-06-15 2011-11-09 オリンパス株式会社 光学式検出装置
EP1376960A1 (en) 2002-06-29 2004-01-02 Deutsche Thomson-Brandt Gmbh Data link layer device with two transmission modes for a serial communication bus
JP2005038956A (ja) * 2003-07-17 2005-02-10 Matsushita Electric Ind Co Ltd 光部品とその製造方法
JP4021382B2 (ja) * 2003-07-28 2007-12-12 オリンパス株式会社 光学式エンコーダ及びその製造方法並びに光学レンズモジュール
KR101069197B1 (ko) * 2009-09-25 2011-09-30 전자부품연구원 발광 및 수광 소자가 일체로 형성된 패키지 모듈
EP2860497B2 (de) * 2013-10-09 2019-04-10 SICK STEGMANN GmbH Optoelektronischer Sensor und Verfahren zur Herstellung eines solchen
US10199412B2 (en) * 2014-07-25 2019-02-05 Heptagon Micro Optics Pte. Ltd. Optoelectronic modules including an image sensor having regions optically separated from one another

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3684823B2 (ja) * 1998-03-26 2005-08-17 松下電工株式会社 半導体リレー
JP2001250978A (ja) * 2000-03-08 2001-09-14 Sharp Corp 光結合素子
JP2004063764A (ja) * 2002-07-29 2004-02-26 Toshiba Corp 光結合半導体装置、およびその製造方法
JP2005283457A (ja) * 2004-03-30 2005-10-13 Olympus Corp 光学式エンコーダ及びその製造方法
CN101872761A (zh) * 2009-04-23 2010-10-27 欧姆龙株式会社 光耦合装置
CN104396026A (zh) * 2012-06-20 2015-03-04 青井电子株式会社 光源一体型光传感器
JP2015095584A (ja) * 2013-11-13 2015-05-18 ローム株式会社 光学装置、光学装置の製造方法
CN104916728A (zh) * 2014-03-14 2015-09-16 株式会社东芝 光耦合装置

Also Published As

Publication number Publication date
JP6620176B2 (ja) 2019-12-11
KR20200090239A (ko) 2020-07-28
TW201941447A (zh) 2019-10-16
JP2019133994A (ja) 2019-08-08
KR102459822B1 (ko) 2022-10-26
TWI785195B (zh) 2022-12-01
CN111656540A (zh) 2020-09-11
WO2019146339A1 (ja) 2019-08-01

Similar Documents

Publication Publication Date Title
EP2750181B1 (en) Optical semiconductor device
KR101120341B1 (ko) 고체 촬상 장치 및 그의 제조 방법
CN100423276C (zh) 半导体装置及其制造方法
CN101569023A (zh) 用于光电子器件的壳体和光电子器件在壳体中的布置
US7273765B2 (en) Solid-state imaging device and method for producing the same
US8680659B2 (en) Semiconductor device
US12230618B2 (en) Optical sensor, and method for manufacturing optical sensor
JP2008092417A (ja) 半導体撮像素子およびその製造方法並びに半導体撮像装置および半導体撮像モジュール
CN106952899B (zh) 光学模块及其制造方法
JP2011054925A (ja) 光学デバイス、固体撮像装置、及び方法
US20160190397A1 (en) Led package structure and the manufacturing method of the same
CN102347435A (zh) 半导体装置
CN102511116A (zh) 光通信模块
CN101241920A (zh) 光学器件及其制造方法
US7928547B2 (en) Optical semiconductor device
CN111656540B (zh) 半导体装置
JP7652638B2 (ja) 半導体装置、その製造方法および基板
CN100429766C (zh) 电路装置及其制造方法
JP4147171B2 (ja) 固体撮像装置およびその製造方法
CN101595558B (zh) 半导体装置的制造方法、拾光模块以及半导体装置
JPS60153184A (ja) 受光素子
CN117913149A (zh) 感测器封装结构及其制造方法
CN117136440A (zh) 半导体装置及其制造方法
US10573677B2 (en) Semiconductor device on which a transparent plate is disposed for exposing an element region
US20220109282A1 (en) Method for obtaining electronic devices and electronic devices

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant