CN111627883A - 半导体装置、层合半导体装置以及用于制造半导体装置的方法 - Google Patents

半导体装置、层合半导体装置以及用于制造半导体装置的方法 Download PDF

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CN111627883A
CN111627883A CN202010127018.3A CN202010127018A CN111627883A CN 111627883 A CN111627883 A CN 111627883A CN 202010127018 A CN202010127018 A CN 202010127018A CN 111627883 A CN111627883 A CN 111627883A
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carrier
semiconductor die
semiconductor
semiconductor device
interconnect
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D·阿勒斯
F·达奇
D·施莱瑟
T·施特克
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明公开了一种半导体装置，其包括引线框架，该引线框架包括至少第一和第二载体，所述第一和第二载体彼此横向地并排布置；至少第一和第二半导体管芯，所述第一半导体管芯布置在第一载体上并电耦合到第一载体，并且第二半导体管芯被布置在第二载体上并电耦合到第二载体；以及互连，其被配置为将第一载体机械地固定到第二载体并且使第一载体与第二载体电绝缘，其中，第一和第二半导体管芯至少部分地暴露于外部。

Description

半导体装置、层合半导体装置以及用于制造半导体装置的 方法
技术领域
本公开总体上涉及一种半导体装置、一种层合半导体装置以及一种用于制造半导体装置的方法。
背景技术
半导体器件制造商不断努力提高半导体器件的电和热特性，同时还试图提高集成度。获得具有改进的集成度的器件的一种方法是将半导体管芯嵌入在诸如PCB的层合体中。然而，半导体管芯，特别是具有垂直晶体管结构的裸功率半导体管芯可能非常薄，并且因此可能难以处理。这可能是一个障碍，特别是在这种层合嵌入式器件的制造中。改进的半导体装置和改进的制造方法可以帮助克服这些和其他问题。
通过独立权利要求的特征解决了本发明所基于的问题。在从属权利要求中描述了其他有利的示例。
发明内容
各个方面涉及一种半导体装置，包括：引线框架，其至少包括第一和第二载体，第一和第二载体彼此横向并排布置；至少第一和第二半导体管芯，第一半导体管芯被布置在第一载体上并电耦合到第一载体，并且第二半导体管芯布置在第二载体上并电耦合到第二载体；以及互连，其被配置为将第一载体机械地固定至第二载体并使第一载体与第二载体电绝缘，其中第一和第二半导体管芯至少部分地暴露于外部，并且其中互连是独立的部件，而不是半导体管芯的封装，也不是层合层。
各个方面涉及一种层合半导体装置，其包括：引线框架，其至少包括第一和第二载体，第一和第二载体彼此横向并排布置；至少第一和第二半导体管芯，第一半导体管芯布置在第一载体上并电耦合到第一载体，并且第二半导体管芯布置在第二载体上并电耦合到第二载体；互连，其被配置为将第一载体机械地固定到第二载体；至少一个第一层合层，其布置在第一和第二半导体管芯之上；以及再分布结构，其布置在第一层合板层上并被配置为将第一半导体管芯电连接到第二半导体管芯，其中，互连是独立的部件，而不是半导体管芯的封装，也不是层合层。
各个方面涉及一种用于制造半导体装置的方法，该方法包括：提供至少包括第一和第二载体的引线框架，第一和第二载体彼此横向并排布置；在第一载体上布置第一半导体管芯并且将第一半导体管芯电耦合到第一载体；在第二载体上布置第二半导体管芯并且将第二半导体管芯电耦合到第二载体；以及在第一和第二载体旁边布置互连，互连被配置为将第一载体机械地固定到第二载体并且使第一载体与第二载体电绝缘，其中，互连是独立的部件，而不是半导体管芯的封装，也不是层合层，其中，第一和第二半导体管芯至少部分暴露于外部。
附图说明
附图示出了示例，并且与描述一起用于解释本公开的原理。将更好地理解本公开的其他示例和许多预期优点，因为通过参考下面的详细描述它们变得更好理解。附图的元素不必相对于彼此成比例。相同的附图标记表示对应的相似部分。
图1A和图1B示出了半导体装置的第一示例，该半导体装置包括布置在两个载体之间的电绝缘互连。
图2示出了半导体装置的第二示例，该半导体装置包括布置在载体的横向侧旁边的互连。
图3A和图3B示出了在施加互连之前(图3A)和已经施加互连之后(图3B)的半导体装置的第三和第四示例。
图4A和图4B示出了包括电绝缘互连的层合半导体装置的第一和第二示例。
图5更详细地示出了图1B的互连元件的示例。
图6示出了用于制造半导体装置或层合半导体装置的方法的流程图。
具体实施方式
在详细描述或权利要求中使用术语“包括”、“具有”、“带有”或其其他变体的程度上，这种术语旨在以类似于术语“包括”的方式表示包括。可以使用术语“耦合”和“连接”及其派生词。应当理解，这些术语可以用来指示两个元件相互协作或相互作用，而不管它们是直接物理或电接触，还是它们彼此不直接接触；可以在“接合”、“附接”或“连接”的元件之间设置中间元件或中间层。
下文进一步描述的(多个)半导体管芯可以是不同类型的，可以通过不同技术制造，并且可以包括例如集成电、电光或机电电路和/或无源、逻辑集成电路、控制电路、微处理器、存储器件等。
图1A示出了包括引线框架101的半导体装置100的俯视图，该引线框架101包括至少第一载体102和第二载体103。第一载体102和第二载体103彼此横向并排布置。半导体装置100还包括至少第一半导体管芯104和第二半导体管芯105，第一半导体管芯104布置在第一载体102上并且电耦合到第一载体102，并且第二半导体管芯105布置在第二载体103上并且电耦合到第二载体103。半导体装置100还包括互连106，该互连106被配置为将第一载体102机械地固定到第二载体103并且将第一载体102与第二载体103电绝缘。在半导体装置100中，第一半导体和第二半导体管芯104、105至少部分地暴露于外部。在本文中，术语“部分暴露”可以具有以下含义：半导体管芯104、105的背离相应的载体102、103的上主侧以及横向侧暴露于外部，而下主侧被相应的载体102、103覆盖。
引线框架101可以包括诸如Al、Cu、Fe的金属或金属合金或由其组成。引线框架100可以具有在100μm至2mm的范围内或在200μm至1mm的范围内的厚度t(比较图1B)。引线框架100可以包括外框架，其中第一和第二载体102、103通过系杆连接到外框架。
第一和第二载体102、103可以具有基本上矩形的形状，并且它们可以基本上是平的。第一和第二载体102、103可以被配置为向第一和第二半导体管芯104、105提供机械支撑。第一和第二载体可以在面对半导体管芯104、105的第一主侧上和/或在相对的第二主侧上包括一个或多个电流沉积的层(例如，Cu层)。
第一和第二半导体管芯104、105可以是被配置为处理高电压和/或高电流的功率半导体管芯。半导体管芯104、105可以包括垂直晶体管结构，其中第一电极(例如，源极电极、发射极电极、漏极电极或集电极电极)面对相应的载体102、103，并且其中，相对的第二电极(例如，源极电极、发射极电极、漏极电极或集电极电极)背离相应的载体102、103。半导体管芯104、105可以例如是是FET或IGBT。根据示例，半导体管芯104、105是裸管芯，这意味着它们不被封装，例如不被封装在模制体中。
第一半导体管芯104和第二半导体管芯105可以通过诸如焊接接头或烧结接头的接头而机械和电耦合到第一载体102和第二载体103。在焊接接头的情况下，例如可以使用扩散焊接工艺来制造接头。可以通过拾取和放置工艺将半导体管芯104、105布置在载体102、103上。
互连106可以被配置为与第一和第二载体102、103的互锁结构机械地互锁，以便将第一载体102机械地固定到第二载体103。互连106可以例如被夹到互锁结构中。替代地和/或附加地，互连106可以胶合到载体102、103，以便将第一载体102机械地固定到第二载体103。
互连106可以是塑料预成型件，其通过拾取和放置工艺布置在第一和第二载体102、103旁边。互连106可以替代地以流体形式被分配在载体102、103旁边，并且随后例如通过加热被固化。互连106可以包括塑料、聚合物、模制体、陶瓷或具有将第一载体102固定到第二载体103所需的机械鲁棒性的任何其他合适的电绝缘材料，或由上述材料组成。
在半导体管芯104、105布置在载体102、103上之前或之后，互连106可以布置在载体102、103旁边。例如，将半导体管芯104、105焊接到载体102、103可能需要施加某个最低温度，但互连106可能无法被配置为承受该最低温度。在这种情况下，可以在已经形成焊接点之后将互连106布置在载体102、103旁边。然而，在互连106可以承受最低温度的情况下，可以在形成焊接点之前将互连106布置在载体102、103旁边。
互连106可以是压印部分。例如，互连106可以放置在载体102、103旁边(例如，通过分配或通过拾取和放置工艺)，并且可以使用压印工艺将互连106机械地固定到载体102、103。压印也可以帮助将互连106与载体102、103的互锁结构互锁。
图1B示出了半导体装置100的侧视图。根据图1B所示的示例，互连106可以布置在第一载体102和第二载体103之间。互连106可以完全或至少部分地填充载体102、103之间的空间。换句话说，引线框架100可以包括布置在第一载体102和第二载体103之间的开口107，并且互连106可以部分或完全填充该开口。
根据示例，互连106可以与载体102、103的第二(下部)主侧共面或几乎共面。例如，这可能是由于如下事实：当互连106布置在载体102、103旁边时，载体102、103被布置在诸如带的支撑件上。互连106的顶部可能伸出开口之外，超出包括载体102、103的第一主侧的平面。
互连106可以被布置在与半导体管芯104、105相距最小距离d处(即，互连106可以不接触半导体管芯104、105)。最小距离d可以为100μm或更大、200μm或更大、500μm或更大、或1mm或更大。最小距离d的尺寸可以被设置为使得层合件或模制件能够填充(尤其是完全填充)互连106与相应的半导体管芯104、105之间的间隙。
根据示例，半导体装置100可以包括多于两个的载体和多于两个的半导体管芯。例如，半导体装置100可以包括一个其他载体和一个其他半导体管芯，该其他半导体管芯布置在其他载体上并且电耦合到该其他载体。该其他载体可以与第一载体102横向并排布置(即，在图1A和图1B中的左侧)，或者与第二载体103横向并排布置(即，图1A和图1B中的右侧)。其他互连106可以被配置为将其他载体分别机械地固定到第一载体102或第二载体103。
根据示例，第一半导体管芯104可以以“源极向上”的方式布置在第一载体102上(即，使得源极电极背离第一载体102)，第二半导体管芯105可以以“漏极向上”的方式布置在第二载体103上，并且第二半导体管芯可以以“源极向上”的方式布置在其他载体上。
图2示出了另一半导体装置200的俯视图，除了以下描述的差异之外，该另一半导体装置200可以与半导体装置100相似或相同。相同的附图标记可以表示相似或相同的部分。
半导体装置200不包括布置在载体102、103之间(例如，在开口107中)的互连106。相反，在半导体装置200中，互连201布置在载体102、103的相对的横向侧202旁边。除了不同的位置，互连201可以与互连106相同，并且可以特别地包括相同的材料并且也可以使用与上述相同的工艺放置到适当位置。
如图2所示，互连201可以布置在横向侧202的整个长度旁边。然而，互连201也可以仅布置在横向侧202的部分长度旁边。
根据示例，互连201可以布置在横向侧202旁边并且也布置在开口107中(即，互连201可以至少部分地在三侧上围绕载体102、103)。根据又一示例，互连201可以附加地布置在载体102、103的外侧203旁边(即，互连201可以至少部分地在四侧上围绕载体102、103)。
图3A示出了另一半导体装置300的俯视图，除了以下描述的差异之外，该半导体装置300可以与半导体装置100和200相似或相同。相同的附图标记可以表示相似或相同的部分。
半导体装置300包括可以与引线框架101相同的引线框架301。引线框架301包括可以与载体102和103相同的许多载体302。半导体管芯303可以布置在载体302中的每一个上，其中半导体管芯303可以与半导体管芯104、105相同。
引线框架301还包括许多开口304，其将各个载体彼此分开。系杆301_1可以跨过开口304并且将载体302中的选定载体彼此连接。例如，沿y方向连续布置的载体302可以通过系杆连接，而没有系杆可以沿x方向连接载体302。
图3B示出了半导体装置300'，其与半导体装置300相同，除了半导体装置300'还包括布置在载体302旁边的互连305。互连305可以布置在开口304中，并且它们可以完全或至少部分填充开口304。互连305可以与半导体装置100的互连106相同或与半导体装置200的互连201相同。
互连305可以布置在所有开口304中，如图3B所示，或者它们可以仅布置在一些开口304中。例如，互连305可以仅布置在基本上沿x方向延伸的第一组开口304_1中。根据另一示例，互连305可以仅布置在基本上沿y方向延伸的第二组开口304_2中。
在半导体装置300'中，各个载体302仍通过系杆301_1彼此机械和电连接。为了制造像半导体装置100或200这样的半导体装置，其中所有载体彼此电绝缘，可以沿着切割线A切割半导体装置300'。切割线A沿着至少一些开口304延伸。通过沿着切割线切割，可以获得包括电绝缘载体的半导体装置306。
根据示例，半导体装置306可以均包括三个载体302和三个半导体管芯303，半导体管芯例如可以是裸管芯。在这种制造场馆中，可以将半导体装置306放置在测试设备上，以例如用于对半导体管芯303进行电学测试。与测试单个半导体管芯相比，半导体装置306的这种“批量测试”可能更具成本效益。此外，半导体装置306可以比单个(裸)管芯在机械上更稳定，并且因此可以更容易处理。
图4A示出了层合半导体装置400的侧视图，该层合半导体装置400包括至少部分封装在层合件401中的半导体装置300。根据示例，层合件401包括PCB或由PCB组成，并且半导体装置300被嵌入在PCB中。
与将各个半导体管芯嵌入在层合件401中相比，嵌入半导体装置300可以提供某些优势。注意，互连106、201、305不是封装物或层合层，而是可以在该方法的比封装或层合半导体装置300更早的阶段被提供，这在实施例中允许改进的制造容易性。例如，使用半导体装置300，可以在层合件401中同时嵌入几个半导体管芯(例如，两个或三个或更多个)(例如，包括多个半导体管芯的半导体装置300可以通过单次拾取和放置工艺而放置在适当的位置)。此外，使用半导体装置300，由于(薄的)半导体管芯303由载体302加强，因此提高了半导体管芯303的机械鲁棒性。
层合的半导体装置400可以包括将半导体管芯303与再分布层403电连接的过孔402。层合件401可以包括单个层合材料层，或者可以包括几个堆叠的层合材料层。层合半导体装置400也可以包括一个以上的单个再分布层403，例如几个堆叠的再分布层403。半导体装置400可以包括可以布置在第一主侧400_1或第二主侧400_2上的附加的电或电子部件。附加的电或电子部件可以例如包括电阻器、电容器、电感器或半导体管芯(例如，包括被配置为控制半导体管芯303的逻辑电路)。
图4B示出了另一层合半导体装置400'的侧视图，除了以下描述的差异之外，该层合半导体装置400'可以与层合半导体装置400相同。
关于层合半导体装置400，示出了载体302在第二主侧400_2上被暴露。然而，也可能的是，一个或多个其他层合材料层404被布置在第二主侧400_2上并且完全封装载体302。其他过孔402和一个或多个其他(堆叠的)再分布结构403也可以被布置在其他层合材料层404上。
根据示例，制造层合半导体装置400'可以包括提供其他层合材料层404，将半导体装置300放置在其他层合材料层404上，将一个或多个其他层合材料层放置在半导体装置300之上并施加热量和/或压力。
图5示出了图1B所示的开口107的一个示例的细节图。在图5的示例中，第一载体102和第二载体103包括互锁结构501，该互锁结构501具有在载体102、103的上主侧和下主侧中的凹陷的形式。这些凹陷被配置为使得互连106可以延伸到凹陷中并由此将第一载体102机械地固定到第二载体103。当然，也可以考虑其他形式的互锁结构。
图6是用于制造像半导体装置100、200、300和300'那样的半导体装置、或者用于制造像层合半导体装置400和400'那样的层合半导体装置的方法600的流程图。
方法600包括：在601处的提供包括至少第一和第二载体的引线框架的动作，第一和第二载体彼此横向并排布置；在602处的在第一载体上布置第一半导体管芯并第一半导体管芯电耦合到第一载体的动作；在603处的在第二载体上布置第二半导体管芯并将第二半导体管芯电耦合到第二载体的动作；以及在604处的将互连布置在第一载体和第二载体旁边的动作，互连被配置为将第一载体机械地固定到第二载体并且使第一载体与第二载体电绝缘，其中第一半导体管芯和第二半导体管芯至少部分地暴露于外部。
根据示例，方法600还可以包括在引线框架中在第一载体和第二载体之间制造开口，并将互连布置在该开口中。此外，互连可以经受压印工艺(例如，将互连牢固地压印到开口中)，以将第一载体和第二载体固定在一起。
根据示例，方法600可以用于制造层合半导体装置。在该情况下，方法600还可以包括在第一载体和第二载体之上层合第一半导体管芯和第二半导体管芯以及互连的动作，以制造层合体。此外，可以在层合体中制造电连接以将第一半导体管芯电耦合至第二半导体管芯。半导体管芯可以例如被连接成使得它们是半桥电路的部分。
示例
在下文中，将使用具体示例进一步解释半导体装置、层合半导体装置以及用于制造半导体装置的方法。
示例1是一种半导体装置，包括：至少包括第一和第二载体的引线框架，第一和第二载体彼此横向并排布置；至少第一和第二半导体管芯，所述第一半导体管芯被布置在第一载体上并且电耦合到第一载体，并且第二半导体管芯被布置在第二载体上并且电耦合到第二载体；以及互连，被配置为将第一载体机械地固定到第二载体并使第一载体与第二载体电绝缘，其中，第一和第二半导体管芯至少部分地暴露于外部，并且其中，互连是独立的部件，而不是半导体管芯的封装也不是层合层。
示例2是示例1的半导体装置，其中，第一和第二载体包括互锁结构，并且其中，互连与互锁结构互锁。
示例3是示例1或2的半导体装置，其中，引线框架包括在第一和第二载体之间的开口，并且其中，互连布置在该开口中。
示例4是示例3的半导体装置，其中，互连完全填充开口。
示例5是示例3或4的半导体装置，其中，互连是压印部分。
示例6是前述示例之一的半导体装置，其中，互连是塑料预成型件。
示例7是前述示例之一的半导体装置，其中，第一半导体管芯的漏极电极面对第一载体，并且第二半导体管芯的源极电极面对第二载体，或者其中，第一半导体管芯的集电极电极面对第一载体，并且第二半导体管芯的发射极电极面对第二载体。
示例8是一种层合半导体装置，包括：包括至少第一和第二载体的引线框架，所述第一和第二载体彼此横向地并排布置；至少第一和第二半导体管芯，所述第一半导体管芯被布置在第一载体上并且电耦合到第一载体，并且第二半导体管芯被布置在第二载体上并且电耦合到第二载体；互连，被配置为将第一载体机械地固定到第二载体；至少一个第一层合层，布置在第一和第二半导体管芯之上；以及再分布结构，布置在第一层合层上并被配置为将第一半导体管芯电连接到第二半导体管芯，其中，互连是独立的部件，而不是半导体管芯的封装，也不是层合层。
示例9是示例8的层合半导体装置，还包括：至少一个其他层合层，该其他层合层布置在第一和第二载体下方。
示例10是示例8或9的层合半导体装置，其中，第一载体和第二载体以及第一半导体管芯和第二半导体管芯完全封装在层合件中。
示例11是示例8至10之一的层合半导体装置，还包括：穿过第一层合层的过孔，该过孔耦合到第一和第二半导体管芯。
示例12是一种用于制造半导体装置的方法，该方法包括：提供包括至少第一和第二载体的引线框架，第一和第二载体彼此横向并排布置；在第一载体上布置第一半导体管芯并且将第一半导体管芯电耦合到第一载体；将第二半导体管芯布置在第二载体上并且将第二半导体管芯电耦合到第二载体；以及在第一和第二载体旁边布置互连，该互连被配置为将第一载体机械地固定到第二载体并使第一载体与第二载体电绝缘，其中，互连是独立的部件，而不是半导体管芯的封装，也不是层合层，其中，第一和第二半导体管芯至少部分暴露于外部。
示例13是示例12的方法，还包括：在第一和第二载体之间的引线框架中制造开口，并将互连布置在该开口中。
示例14是示例12或13的方法，还包括：压印互连以将第一和第二载体固定在一起。
示例15是示例12至14之一的方法，还包括：在第一和第二载体之上层合第一和第二半导体管芯以及互连，以制造层合体。
示例16是示例15的方法，还包括：在层合体中制造电连接，以将第一半导体管芯电耦合到第二半导体管芯。
示例17是示例16的方法，其中，第一半导体管芯和第二半导体管芯是半桥电路的部分。
示例18是一种设备，包括用于执行根据示例12至17之一的方法的单元。
尽管已经关于一个或多个实施方式示出和描述了本公开，但是在不脱离所附权利要求的精神和范围的情况下，可以对示出的示例进行变更和/或修改。特别是关于上述部件或结构(组件、器件、电路、系统等)所执行的各种功能，除非另有说明，否则用于描述这种部件的术语(包括对“单元”的引用)旨在对应于执行所描述的部件的指定功能的任何部件或结构(例如，在功能上等同)，即使在结构上不等同于执行在本文中示出的本公开的示例性实施方式中的功能的公开结构。

Claims (17)

1.一种半导体装置，包括：
引线框架，其包括至少第一载体和第二载体，所述第一载体和所述第二载体彼此横向并排布置，
至少第一半导体管芯和第二半导体管芯，所述第一半导体管芯被布置在所述第一载体上并且电耦合到所述第一载体，并且所述第二半导体管芯被布置在所述第二载体上并且电耦合到所述第二载体，以及
互连，所述互连被配置为将所述第一载体机械地固定到所述第二载体并且使所述第一载体与所述第二载体电绝缘，
其中，所述第一半导体管芯和所述第二半导体管芯至少部分地暴露于外部，并且
其中，所述互连是独立的部件，而不是所述第一半导体管芯或所述第二半导体管芯的封装，也不是层合层。
2.根据权利要求1所述的半导体装置，其中，所述第一载体和所述第二载体包括互锁结构，并且其中，所述互连与所述互锁结构互锁。
3.根据权利要求1或2所述的半导体装置，其中，所述引线框架包括在所述第一载体与所述第二载体之间的开口，并且其中，所述互连布置在所述开口中。
4.根据权利要求3所述的半导体装置，其中，所述互连完全填充所述开口。
5.根据权利要求3或4所述的半导体装置，其中，所述互连是压印部分。
6.根据前述权利要求之一所述的半导体装置，其中，所述互连是塑料预成型件。
7.根据前述权利要求之一所述的半导体装置，其中，所述第一半导体管芯的漏极电极面对所述第一载体，并且所述第二半导体管芯的源极电极面对所述第二载体，或者其中，所述第一半导体管芯的集电极电极面对所述第一载体，并且所述第二半导体管芯的发射极电极面对所述第二载体。
8.一种层合半导体装置，包括：
引线框架，其包括至少第一载体和第二载体，所述第一载体和所述第二载体彼此横向并排布置，
至少第一半导体管芯和第二半导体管芯，所述第一半导体管芯布置在所述第一载体上并且电耦合到所述第一载体，并且所述第二半导体管芯布置在所述第二载体上并且电耦合到所述第二载体，
互连，所述互连被配置为将所述第一载体机械地固定到所述第二载体，
至少一个第一层合层，所述至少一个第一层合层布置在所述第一半导体管芯和所述第二半导体管芯之上，以及
再分布结构，所述再分布结构布置在所述第一层合层上并且被配置为将所述第一半导体管芯电连接到所述第二半导体管芯。
其中，所述互连是独立的部件，而不是所述第一半导体管芯或所述第二半导体管芯的封装，也不是层合层。
9.根据权利要求8所述的层合半导体装置，还包括：
至少一个其他层合层，所述其他层合层布置在所述第一载体和所述第二载体下方。
10.根据权利要求8或9所述的层合半导体装置，其中，所述第一载体和所述第二载体以及所述第一半导体管芯和所述第二半导体管芯被完全封装在层合件中。
11.根据权利要求8至10之一所述的层合半导体装置，还包括：
穿过所述第一层合层的过孔，所述过孔耦合到所述第一半导体管芯和所述第二半导体管芯。
12.一种用于制造半导体装置的方法，所述方法包括：
提供包括至少第一载体和第二载体的引线框架，所述第一载体和所述第二载体彼此横向并排布置，
在所述第一载体上布置第一半导体管芯并将所述第一半导体管芯电耦合到所述第一载体，
在所述第二载体上布置第二半导体管芯并将所述第二半导体管芯电耦合到所述第二载体，以及
在所述第一载体和所述第二载体旁边布置互连，所述互连被配置为将所述第一载体机械地固定到所述第二载体并且使所述第一载体与所述第二载体电绝缘，其中，所述互连是独立的部件，而不是所述第一半导体管芯或所述第二半导体管芯的封装，也不是层合层，
其中，所述第一半导体管芯和所述第二半导体管芯至少部分地暴露于外部。
13.根据权利要求12所述的方法，还包括：
在所述第一载体和所述第二载体之间的所述引线框架中制造开口，以及
在所述开口中布置所述互连。
14.根据权利要求12或13所述的方法，还包括：
压印所述互连以将所述第一载体和所述第二载体固定在一起。
15.根据权利要求12至14之一所述的方法，还包括：
在所述第一载体和所述第二载体之上层合所述第一半导体管芯和所述第二半导体管芯以及所述互连，以制造层合体。
16.根据权利要求15所述的方法，还包括：
在所述层合体中制造电连接以将所述第一半导体管芯电耦合到所述第二半导体管芯。
17.根据权利要求16所述的方法，其中，所述第一半导体管芯和所述第二半导体管芯是半桥电路的部分。
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