CN111599691A - 一种基于fc芯片的双面挖腔陶瓷封装工艺 - Google Patents
一种基于fc芯片的双面挖腔陶瓷封装工艺 Download PDFInfo
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Abstract
本发明的一种基于FC芯片的双面挖腔陶瓷封装工艺,在陶瓷基板上下面的芯片贴装位置进行预先挖腔,封装时将FC芯片分别沉到相应的陶瓷腔里并与陶瓷基板连接,将盖板通过合金熔封的工艺焊接在陶瓷基板四周的焊接区内,并在陶瓷基板背面植球,完成封装。通过在陶瓷基板两侧面挖腔形成上空腔和下空腔,上空腔和下空腔内分别安装有FC芯片,使得陶瓷基板的封装空间变大,提高了陶瓷封装的空间利用率且降低了陶瓷封装的外形尺寸。
Description
技术领域
本发明属于芯片陶瓷封装技术领域,具体来说是一种基于FC芯片的双面挖腔陶瓷封装工艺。
背景技术
随着半导体技术的不断发展,越来越多的芯片种类被开发出来以适用于不同的市场需求,其中FC芯片是为现阶段封装所使用的主流芯片之一。然而现有的FC芯片的陶瓷封装结构由于内部空间小,存在难以满足需求的问题。
发明内容
1.发明要解决的技术问题
本发明的目的在于解决现有的FC芯片陶瓷封装结构由于内部空间小,难以满足需求的问题。
2.技术方案
为达到上述目的,本发明提供的技术方案为:
本发明的一种基于FC芯片的双面挖腔陶瓷封装工艺,在陶瓷基板两侧面的芯片贴装位置进行预先挖腔,封装时将FC芯片分别沉到相应的陶瓷腔里并与陶瓷基板连接,将盖板通过合金熔封的工艺焊接在陶瓷基板四周的焊接区内,并在陶瓷基板背面植球,完成封装。
优选的,所述封装工艺具体包括如下步骤:
S100、挖腔,在陶瓷基板两侧面的芯片贴装位置进行挖腔;
S200、绝缘,对同一面的腔体之间进行相互隔离;
S300、贴装,将FC芯片分别沉到相应的陶瓷腔里并进行固定;
S400、粘合,使用填充胶填充FC芯片与陶瓷基板之间;
S500、封帽,将盖板通过合金熔封的方式焊接在陶瓷基板顶部的焊接区内;
S600、植球,对陶瓷基板背面植球,完成封装。
优选的,所述步骤S100中的挖腔具体为先将各生瓷片通过激光或者机械冲制在相应位置开出槽,再将各层生瓷片叠加在一起进行烧结,该相应位置的槽在叠加一起之后形成了腔体。
优选的,所述步骤S200中的相互隔离具体是将腔体之间陶瓷体上打满接地孔。
优选的,所述步骤S300中的贴装具体为将FC芯片以表贴的方式贴装到陶瓷基板的腔体中,贴装精度控制在±35um以内。
优选的,所述步骤S400具体为使用填充胶填充FC芯片与陶瓷基板之间后,再进行烘烤使得填充胶凝固,所述烘烤的具体过程为将陶瓷基板置于150℃的温度下烘烤30~40分钟,使填充胶完全固化。
优选的,所述步骤S400中的粘合具体为对腔体中的FC芯片底部的锡球进行底部填充胶。
优选的,所述步骤5600中焊接区的宽度为1.5~2.0mm。
优选的,所述挖腔深度为0.2~0.4mm。
3.有益效果
采用本发明提供的技术方案,与现有技术相比,具有如下有益效果:
本发明的一种基于FC芯片的双面挖腔陶瓷封装工艺,在陶瓷基板上下面的芯片贴装位置进行预先挖腔,封装时将FC芯片分别沉到相应的陶瓷腔里并与陶瓷基板连接,将盖板通过合金熔封的工艺焊接在陶瓷基板四周的焊接区内,并在陶瓷基板背面植球,完成封装。通过在陶瓷基板两侧面挖腔形成上空腔和下空腔,上空腔和下空腔内分别安装有FC芯片,使得陶瓷基板的封装空间变大,提高了陶瓷封装的空间利用率且降低了陶瓷封装的外形尺寸。
附图说明
图1为本实施例的制备的封装结构的内部俯视图;
图2为本实施例的制备的封装结构的内部仰视图;
图3为本实施例的制备的封装结构的结构示意图;
图4为本发明的工艺流程图。
示意图中的标号说明:
1、陶瓷基板;2、焊接区;3、上空腔;4、下空腔;5、FC芯片;6、锡球;7、点胶层;8、盖板;9、植球。
具体实施方式
为了便于理解本发明,下面将参照相关附图对本发明进行更全面的描述,附图中给出了本发明的若干实施例,但是,本发明可以以许多不同的形式来实现,并不限于本文所描述的实施例,相反地,提供这些实施例的目的是使对本发明的公开内容更加透彻全面。
需要说明的是,当元件被称为“固设于”另一个元件,它可以直接在另一个元件上或者也可以存在居中的元件;当一个元件被认为是“连接”另一个元件,它可以是直接连接到另一个元件或者可能同时存在居中元件;本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的。
除非另有定义,本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同;本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本发明;本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
实施例1
参照附图1-附图3,本实施例的一种基于FC芯片的双面挖腔陶瓷封装工艺,在陶瓷基板1两侧面的芯片贴装位置进行预先挖腔,封装时将FC芯片5分别沉到相应的陶瓷腔里并与陶瓷基板1连接,将盖板8通过合金熔封的工艺焊接在陶瓷基板1四周的焊接区2内,并在陶瓷基板1背面植球9,完成封装。
其中,封装工艺具体包括如下步骤:
S100、挖腔,在陶瓷基板1两侧面的芯片贴装位置进行挖腔,挖腔深度为0.2~0.4mm。;
S200、绝缘,对同一面的腔体之间进行相互隔离;
S300、贴装,将FC芯片5分别沉到相应的陶瓷腔里并进行固定;
S400、粘合,使用填充胶填充FC芯片5与陶瓷基板1之间;
S500、封帽,将盖板8通过合金熔封的方式焊接在陶瓷基板1顶部的焊接区2内;
S600、植球,对陶瓷基板1背面植球,完成封装。
步骤S100中的挖腔具体为先将各生瓷片通过激光或者机械冲制在相应位置开出槽,再将各层生瓷片叠加在一起进行烧结,该相应位置的槽在叠加一起之后形成了腔体。通过预先在各生瓷片上进行开槽然后组装烧结形成腔体,比整体烧结后进行开孔形成腔体更加稳定且腔体尺寸可控,且降低烧结后开孔过程对陶瓷基板1造成的结构性损害,大大提升了陶瓷基板1的完整性和稳定性。
步骤S200中的相互隔离具体是将腔体之间陶瓷体上打满接地孔,防止相邻间的腔体的元器件之间互相造成干扰,提升了整体芯片的稳定性。
步骤S300中的贴装具体为将FC芯片5以表贴的方式贴装到陶瓷基板1的腔体中,贴装精度控制在±35um以内。
步骤S400具体为使用填充胶填充FC芯片5与陶瓷基板1之间后,再进行烘烤使得填充胶凝固,所述烘烤的具体过程为将陶瓷基板1置于150℃的温度下烘烤30~40分钟,使填充胶完全固化形成点胶层7,填充胶完全固化后可以对FC芯片5与陶瓷基板1进行良好的的固定,提升整体封装结构的稳定性。
步骤S600中焊接区2的宽度为1.5~2.0mm。
本实施例的工艺制备的封装结构包括陶瓷基板1和FC芯片5,所述陶瓷基板1的两侧向内凹陷形成上空腔3和下空腔4,所述上空腔3和下空腔4内均设有FC芯片5,所述上空腔3和下空腔4内壁通过锡球6与FC芯片5固定,所述FC芯片5与锡球6之间还填充有点胶层7,所述陶瓷基板1底部设有若干个均匀分布的植球9。通过在陶瓷基板1两侧面挖腔形成上空腔3和下空腔4,上空腔3和下空腔4内分别安装有FC芯片5,使得陶瓷基板1的封装空间变大,提高了陶瓷封装的空间利用率且降低了陶瓷封装的外形尺寸。
其中,上空腔3的尺寸为2cm×2cm~4cm×4cm,上空腔3的深度为2~5mm。下空腔4的的尺寸为1cm×1cm~2cm×2cm,所述下空腔4的深度为2~5mm。上空腔3内设有至少一个FC芯片5,所述下空腔4内内设有至少一个FC芯片5。可以在上空腔3内放置一个或者多个尺寸相同或不同的FC芯片5,提高了陶瓷封装的空间利用率。
陶瓷基板1在上空腔3的一面上覆盖有盖板8,所述盖板8与陶瓷基板1固定连接,所述盖板8的面积大于所述上空腔3的面积。盖板8中心相对于上空腔3向外突出,使得盖板8与陶瓷基板1上表面形成空隙,防止盖板8对上空腔3内的FC芯片5造成积压,提升了陶瓷封装结构的稳定性和安全性。陶瓷基板1侧面设有焊接区2,所述盖板8与陶瓷基板1的接触面在焊接区2上。
以上所述实施例仅表达了本发明的某种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制;应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围;因此,本发明专利的保护范围应以所附权利要求为准。
Claims (9)
1.一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:在陶瓷基板两侧面的芯片贴装位置进行预先挖腔,封装时将FC芯片分别沉到相应的陶瓷腔里并与陶瓷基板连接,将盖板通过合金熔封的工艺焊接在陶瓷基板四周的焊接区内,并在陶瓷基板背面植球,完成封装。
2.根据权利要求1所述的一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:所述封装工艺具体包括如下步骤:
S100、挖腔,在陶瓷基板两侧面的芯片贴装位置进行挖腔;
S200、绝缘,对同一面的腔体之间进行相互隔离;
S300、贴装,将FC芯片分别沉到相应的陶瓷腔里并进行固定;
S400、粘合,使用填充胶填充FC芯片与陶瓷基板之间;
S500、封帽,将盖板通过合金熔封的方式焊接在陶瓷基板顶部的焊接区内;
S600、植球,对陶瓷基板背面植球,完成封装。
3.根据权利要求1所述的一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:所述步骤S100中的挖腔具体为先将各生瓷片通过激光或者机械冲制在相应位置开出槽,再将各层生瓷片叠加在一起进行烧结,该相应位置的槽在叠加一起之后形成了腔体。
4.根据权利要求1所述的一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:所述步骤S200中的相互隔离具体是将腔体之间陶瓷体上打满接地孔。
5.根据权利要求1所述的一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:所述步骤S300中的贴装具体为将FC芯片以表贴的方式贴装到陶瓷基板的腔体中,贴装精度控制在±35um以内。
6.根据权利要求1所述的一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:所述步骤S400具体为使用填充胶填充FC芯片与陶瓷基板之间后,再进行烘烤使得填充胶凝固,所述烘烤的具体过程为将陶瓷基板置于150℃的温度下烘烤30~40分钟,使填充胶完全固化。
7.根据权利要求1所述的一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:所述步骤S400中的粘合具体为对腔体中的FC芯片底部的锡球进行底部填充胶。
8.根据权利要求1所述的一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:所述步骤5600中焊接区的宽度为1.5~2.0mm。
9.根据权利要求3所述的一种基于FC芯片的双面挖腔陶瓷封装工艺,其特征在于:所述挖腔深度为0.2~0.4mm。
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