CN111554595B - Semiconductor chip preparation device - Google Patents
Semiconductor chip preparation device Download PDFInfo
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- CN111554595B CN111554595B CN202010391267.3A CN202010391267A CN111554595B CN 111554595 B CN111554595 B CN 111554595B CN 202010391267 A CN202010391267 A CN 202010391267A CN 111554595 B CN111554595 B CN 111554595B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
The invention discloses a semiconductor chip preparation device, comprising: the semiconductor conveying device comprises a mechanical arm and a vacuum adsorption device, wherein an adsorption hole is formed in the mechanical arm, and the adsorption hole is communicated with the vacuum adsorption device and used for adsorbing a semiconductor chip; and a gas cleaning device for spraying cleaning gas to the mechanical arm to clean the mechanical arm. According to the semiconductor chip manufacturing device of the embodiment of the invention, not only can corrosion damage of corrosive gas to the mechanical arm be reduced, but also pollution to the semiconductor chip conveyed by the mechanical arm can be reduced, and the positive electrode of the semiconductor chip manufacturing device does not need to be stopped for cleaning and maintenance, so that the accumulative influence of the corrosive gas on the mechanical arm is greatly reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation device of a semiconductor chip.
Background
Most of the semiconductor chip preparation devices in the prior art work in an atmospheric environment (generally, a slight positive pressure is generated), a transfer robot arm of the semiconductor chip preparation device contacts a transfer wafer, the wafer is contacted with corrosive gas after reaction chambers of a plurality of process stations are produced, so that tiny corrosive gas residues are generated, and the corrosive gas or acid generated by combination of the corrosive gas and water vapor in the air can all have an invasive corrosion influence on the wafer and the robot arm of the semiconductor chip preparation device.
Disclosure of Invention
The invention aims to provide a semiconductor chip preparation device which can reduce corrosion damage of residual corrosive gas to a mechanical arm.
The apparatus for manufacturing a semiconductor chip according to an embodiment of the present invention includes: the semiconductor conveying device comprises a mechanical arm and a vacuum adsorption device, wherein an adsorption hole is formed in the mechanical arm, and the adsorption hole is communicated with the vacuum adsorption device and used for adsorbing a semiconductor chip; and a gas cleaning device for spraying cleaning gas to the mechanical arm to clean the mechanical arm.
Therefore, according to the manufacturing apparatus of the semiconductor chip of the embodiment of the invention, the gas cleaning device is arranged to spray the cleaning gas to the mechanical arm to clean the corrosive gas at the position of the mechanical arm, so that not only can corrosion damage of the corrosive gas to the mechanical arm be reduced, but also pollution to the semiconductor chip conveyed by the mechanical arm can be reduced, and the positive electrode of the manufacturing apparatus of the semiconductor chip is not required to be stopped for cleaning and maintenance, so that the accumulative influence of the corrosive gas on the mechanical arm is greatly reduced.
According to some embodiments of the invention, the gas scavenging device comprises: the gas generating device is used for providing cleaning gas for the gas spraying device, and the gas spraying device is connected with the gas generating device so as to periodically spray the cleaning gas to the mechanical arm.
Optionally, the air injection device is arranged on the mechanical arm and injects air towards the adsorption hole.
Further, the vacuum adsorption device comprises a vacuum pump and a first pipeline, the first pipeline is connected between the adsorption hole and the vacuum pump, the gas injection device is arranged close to the adsorption hole, and the gas generation device and the gas injection device are respectively communicated with the first pipeline.
Optionally, the vacuum adsorption device includes a vacuum pump and a first pipeline, the first pipeline is connected between the adsorption hole and the vacuum pump, the mechanical arm is provided with an adsorption nozzle, the adsorption hole is formed on the adsorption nozzle, and the gas generation device is communicated with the adsorption nozzle.
Furthermore, the adsorption hole is formed in the adsorption nozzle and penetrates through the adsorption nozzle along the axial direction of the adsorption nozzle, and an air injection hole communicated with the adsorption hole is formed in the side wall of the adsorption nozzle.
Optionally, the apparatus for manufacturing a semiconductor chip further comprises a shielding portion movably disposed at the air injection hole at an open position and a closed position.
Optionally, the tail end of the mechanical arm is provided with a grabbing part, the number of the adsorption nozzles is multiple, and the multiple adsorption nozzles are arranged on the upper surface of the grabbing part.
Optionally, the first pipeline is a three-way pipe and comprises a first pipeline, a second pipeline and a third pipeline, the first pipeline is respectively connected with the second pipeline, the third pipeline and the adsorption nozzle, the second pipeline is connected with the vacuum pump, and the third pipeline is connected with the gas generation device.
Furthermore, the semiconductor chip preparation device further comprises a control device, the second pipeline is provided with a first valve, the third pipeline is provided with a second valve, and the control device is respectively connected with the first valve and the second valve and used for controlling the opening and closing of the first valve and the second valve.
Drawings
FIG. 1 is a schematic view of a part of the structure of an apparatus for manufacturing a semiconductor chip according to an embodiment of the present invention;
FIG. 2 is a schematic view of a gripper of a robot arm of an apparatus for manufacturing semiconductor chips according to another embodiment of the present invention;
FIG. 3 is a schematic view showing the connection between a gas purging device and a vacuum suction device of an apparatus for manufacturing a semiconductor chip according to an embodiment of the present invention;
FIG. 4 is a schematic view showing the connection between a gas purging device and a vacuum suction device of an apparatus for manufacturing a semiconductor chip according to another embodiment of the present invention;
fig. 5 is a partially schematic sectional view of a gripper portion and an adsorption nozzle of a robot arm of an apparatus for manufacturing a semiconductor chip according to an embodiment of the present invention.
Reference numerals:
100: a semiconductor chip manufacturing apparatus;
1: semiconductor transfer device, 11: robot arm, 11 a: first arm, 11 b: second arm, 12: grasping portion, 13: a machine control unit;
21: gas generation device, 22: air jet device, 23: a second conduit;
3: vacuum adsorption apparatus, 31: vacuum pump, 32: first pipe, 321: first pipe, 322: second pipe, 323: third line, 33: an adsorption hole;
4: adsorption nozzle, 41: a gas injection hole;
5: semiconductor chip, 51: first valve, 52: a second valve.
Detailed Description
The following describes a semiconductor chip manufacturing apparatus 100 according to the present invention in detail with reference to the accompanying drawings and the detailed description.
A manufacturing apparatus 100 of a semiconductor chip according to an embodiment of the present invention is described below with reference to the drawings.
The manufacturing apparatus 100 of a semiconductor chip according to an embodiment of the present invention may include the semiconductor conveying apparatus 1 and a gas purging apparatus.
As shown in fig. 1, the semiconductor conveying device 1 includes a robot arm 11 and a vacuum suction device 3 (not shown), during the preparation of the semiconductor chip 5, the semiconductor chip 5 needs to be processed in a plurality of processes, and the semiconductor chip 5 can be gripped and conveyed by the semiconductor conveying device 1, so that the semiconductor chip 5 can be processed and prepared in a plurality of process stations. Wherein the robot 11 is provided with an absorption hole 33, the absorption hole 33 is communicated with the vacuum absorption device 3 for absorbing the semiconductor chip 5, thereby the semiconductor chip 5 can be absorbed by the vacuum absorption device 3 and the absorption hole 33 to fix the semiconductor chip 5 and the robot 11 together, and the semiconductor chip 5 can be transferred to different process stations by the movement and adjustment of the robot 11.
After the semiconductor chip 5 is produced in the reaction chambers of different process stations, a small corrosive gas residue is generated on the surface of the semiconductor chip 5 due to the contact with the corrosive gas, the residual corrosive gas is moved and conveyed along with the semiconductor chip 5, the semiconductor chip 5 is clamped and conveyed by the mechanical arm 11, and thus the residual corrosive gas itself and acids generated after the residual corrosive gas is combined with water in the air can corrode the mechanical arm 11 and influence other semiconductor chips 5 conveyed by the mechanical arm 11.
The gas cleaning device is used for blowing cleaning gas to the robot arm 11 to clean the robot arm 11 and remove residual corrosive gas. Thus, the cleaning gas is sprayed to the mechanical arm 11 through the gas cleaning device, the corrosive gas at the position of the mechanical arm 11 can be blown away, the corrosion influence of the corrosive gas on the mechanical arm 11 is reduced, the corrosion damage to the surface of the mechanical arm 11 after the corrosive gas is combined with water in the air is reduced, and the pollution to a semiconductor chip when the mechanical arm 11 grabs other semiconductor chips can be avoided.
In this case, the gas purging device may be provided separately from the semiconductor transfer device 1, i.e., the gas purging device is provided separately from the semiconductor transfer device 1, and the gas purging device ejects gas toward the space in which the semiconductor transfer device 1 is located, particularly the position of the robot arm 11, to blow away corrosive gas in the space in which the semiconductor transfer device 1 is located, particularly the range of the space in which the robot arm 11 is located. Alternatively, a gas cleaning device may be provided on the semiconductor transfer device 1, and the gas cleaning device may blow gas toward the periphery of the robot arm 11 to clean the corrosive gas in the space where the robot arm 11 is located.
Thus, according to the semiconductor chip manufacturing apparatus 100 of the embodiment of the present invention, the gas cleaning device is provided to spray the cleaning gas to the robot arm 11 to clean the corrosive gas at the robot arm 11, so that not only the corrosion attack of the corrosive gas to the robot arm 11 can be reduced, but also the contamination of the semiconductor chip 5 transferred by the robot arm 11 can be reduced, and the semiconductor chip manufacturing apparatus 100 does not need to be stopped for cleaning and maintenance, thereby greatly reducing the cumulative influence of the corrosive gas on the robot arm 11.
As shown in fig. 1, the semiconductor transfer apparatus 1 further includes a mechanical control unit 13, the robot arm 11 may include a first arm 11a, a second arm 11b, and a distal grasping unit 12, the first arm 11a is connected to the second arm 11b and the mechanical control unit 13, the second arm 11b is connected to the first arm 11a and the grasping unit 12, and the first arm 11a, the second arm 11, and the grasping unit 12 may be controlled by the mechanical control unit 13 to move, so that the robot arm 11 is movable in the vertical direction and the horizontal direction, thereby achieving the lifting, rotating, and extending of the robot arm 11.
In some embodiments of the present invention, the gas purging device may include a gas generating device 21 and a gas spraying device 22, where the gas generating device 21 is used to provide purge gas for the gas spraying device 22, and it should be noted that the gas generating device 21 is used to generate purge gas, for example, the purge gas may be air, or inert gas such as nitrogen, helium, etc., the gas generating device 21 may be a fan, a wind wheel, etc., and clean air may be blown to the gas spraying device 22 by the fan; the gas injection device 22 is connected to the gas generation device 21 to inject the purge gas to the robot arm 11 at regular intervals, so that the purge gas supplied from the gas generation device 21 can be injected to the robot arm 11 by the gas injection device 22, wherein the gas injection device 22 may be a nozzle or the like as for the gas injection device 22, and the purge gas can be injected to the space where the robot arm 11 is located by the gas injection device 22, for example, the gas injection device 22 can inject the purge gas to the lower space, the upper space, or the lateral space of the robot arm 11. Further, the robot arm 11 is at least partially located in the spraying range of the gas spraying device 22, and the cleaning gas sprayed by the gas spraying device 22 blows through the robot arm 11, so that the surface of the robot arm 11 can be dried, and the damage of the corrosive gas combined with water in the air to the robot arm 11 can be further reduced.
Alternatively, as shown in fig. 2, the gas injection device 22 may be provided on the robot arm 11 and inject gas toward the adsorption hole 33, and the robot arm 11 adsorbs the semiconductor chip 5 through the adsorption hole 33, so that the robot arm 11 is in clamping contact with the semiconductor chip 5 through the portion where the adsorption hole 33 is provided, and the corrosive gas is left in a large amount in the portion where the adsorption hole 33 is provided in the robot arm 11, and the cleaning gas is injected toward the adsorption hole 33 by the gas injection device 22, whereby the corrosive gas in the adsorption hole 33 can be cleaned, and the corrosive gas in the robot arm 11 can be cleaned to a greater extent.
In some examples of the present invention, as shown in fig. 3, the vacuum adsorption device 3 may include a vacuum pump 31 and a first pipe 32, and the first pipe 32 is connected between the adsorption hole 33 and the vacuum pump 31, whereby the vacuum pump 31 performs a vacuum process at the adsorption hole 33 through the first pipe 32 to form a negative pressure at the adsorption hole 33, thereby enabling the semiconductor chip 5 to be adsorbed on the robot arm 11. As shown in fig. 2, the gas injection device 22 is disposed adjacent to the adsorption hole 33 to facilitate injection of cleaning gas around the adsorption hole 33, and the gas generation device 21 and the gas injection device 22 are communicated with each other through the second pipeline 23, so that the gas path of the gas cleaning device and the adsorption gas path of the transport device are independently disposed, and the corresponding gas paths do not interfere with each other, thereby facilitating control and improving stability of the semiconductor chip manufacturing apparatus 100.
In other examples of the present invention, as shown in fig. 1 and fig. 4 to fig. 5, the robot arm 11 is provided with an adsorption nozzle 4, and an adsorption hole 33 is formed on the adsorption nozzle 4, wherein the vacuum adsorption device 3 includes a vacuum pump 31 and a first pipe 32, and the first pipe 32 is connected between the adsorption hole 33 and the vacuum pump 31, so that the vacuum pump 31 performs a vacuum process on the adsorption hole 33 through the first pipe 32 to form a negative pressure at the adsorption hole 33, thereby enabling the semiconductor chip 5 to be adsorbed on the robot arm 11. As shown in fig. 4, the vacuum pump 31 is connected to the adsorption nozzle 4 through the first pipe 32 to communicate with the adsorption hole 33, the gas generating device 21 is communicated with the adsorption nozzle 4, that is, the gas spraying device 22 may be the adsorption nozzle 4, and the adsorption hole 33 may be communicated with the gas generating device 21 to spray the cleaning gas, so that the vacuum pump 31 forms a negative pressure through the adsorption nozzle 4 to adsorb the semiconductor chip 5, and the gas generating device 21 sprays the gas through the adsorption nozzle 4 to clean the corrosive gas at the adsorption nozzle 4, thereby eliminating the need to provide a separate gas spraying device 22, and simplifying the structure of the semiconductor chip manufacturing apparatus 100.
Alternatively, as shown in fig. 5, the adsorption nozzle 4 is provided with gas injection holes 41 and adsorption holes 33, wherein the gas injection holes 41 are formed on the side wall of the adsorption nozzle 4, the adsorption holes 33 are formed in the adsorption nozzle 4 and the adsorption holes 33 penetrate the upper end surface of the adsorption nozzle 4, and thus the gas injection holes 41 and the adsorption holes 33 are provided at different positions of the adsorption nozzle 4, so that the gas generating device 21 can communicate with both the gas injection holes 41 and the adsorption holes 33, the purge gas can be injected into the upper space of the adsorption nozzle 4 through the adsorption holes 33, and the purge gas can be injected into the side space of the adsorption nozzle 4 through the gas injection holes 41, thereby increasing the gas injection space range of the gas cleaning device and improving the cleaning effect.
Specifically, as shown in fig. 5, the adsorption nozzle 4 may be formed in a cylindrical structure. The adsorption hole 33 is formed in the adsorption nozzle 4 and penetrates through the adsorption nozzle 4 along the axial direction of the adsorption nozzle 4, a part of the first pipeline 32 is formed in the mechanical arm 11, one end of the adsorption nozzle 4 connected with the mechanical arm 11 is communicated with the first pipeline 32, namely, the adsorption hole 33 is communicated with the first pipeline 32, and the gas injection hole 41 penetrates through the side wall of the adsorption nozzle 4 along the radial direction of the adsorption nozzle 4 and is communicated with the adsorption hole 33 in the adsorption nozzle 4, so that the cleaning gas flows to the adsorption nozzle 4 through the first pipeline 32 and can be upwards sprayed out through the adsorption hole 33, and can also be sprayed out from the side face of the adsorption nozzle 4 through the gas injection hole 41.
As for the gas ejection holes 41, the gas ejection holes 41 may extend in the circumferential direction of the side wall of the adsorption nozzle 4, so that the purge gas ejected from the gas ejection holes 41 can be ejected in the circumferential direction of the adsorption nozzle 4, thereby enabling an increase in the purge range. Further, the gas injection holes 41 may be plural, and the plural gas injection holes 41 may be provided at regular intervals in the circumferential direction of the adsorption nozzle 4, thereby making the purge gas ejection more uniform. As for the gas injection direction of the gas injection holes 41, the gas injection holes 41 may inject gas in a horizontal direction, or the gas injection holes 41 may extend obliquely to the horizontal direction, whereby the gas injection holes 41 may inject gas obliquely upward or obliquely downward.
Further, the semiconductor chip manufacturing apparatus 100 further includes a shielding portion movably provided at the gas ejection hole 41 at an open position and a closed position, whereby the gas ejection hole 41 can be opened and closed by the shielding portion, so that the gas ejection hole 41 can be closed when the adsorption nozzle 4 adsorbs the semiconductor chip 5 to form a negative pressure at the adsorption hole 33, thereby facilitating adsorption of the semiconductor chip 5, and when the robot arm 11 is cleaned, the gas ejection hole 41 can be opened, and a cleaning gas is ejected through the gas ejection hole 41 to clean a side space of the adsorption nozzle 4.
As shown in fig. 1, the end of the robot arm 11 may be provided with a plurality of gripping portions 12, and the plurality of suction nozzles 4 are disposed on the upper surface of the gripping portions 12, so that the semiconductor chip 5 and the gripping portions 12 are more firmly sucked by the plurality of suction nozzles 4, the cleaning space and range of the gas cleaning device can be increased, and the cleaning effect is improved.
Optionally, portion 12 that snatchs forms the arc, and a plurality of adsorption nozzle 4 are along the even spaced apart setting of arc extending direction of portion 12 that snatchs, from this for semiconductor chip 5 and the portion 12 that snatchs between adsorb and be connected the atress more even, are favorable to snatching of semiconductor chip 5, also make through a plurality of adsorption nozzle 4 to sweep gas and can follow the extending direction even injection of portion 12 that snatchs, so that gas cleaning device cleans more evenly, and the cleaning range is wider.
In some embodiments of the present invention, as shown in fig. 4, the first pipe 32 may be a tee pipe, the first pipe 32 includes a first pipe 321, a second pipe 322 and a third pipe 323, the first pipe 321 is connected to the second pipe 322, the third pipe 323 and the adsorption nozzle 4, the second pipe 322 is connected to the vacuum pump 31, and the third pipe 323 is connected to the gas generating apparatus 21. Specifically, one end of the first pipeline 321 is communicated with the adsorption nozzle 4, and the other end of the first pipeline 321 is respectively connected with the second pipeline 322 and the third pipeline 323, so that the first pipeline 321 is communicated with the vacuum pump 31 through the second pipeline 322 and is communicated with the gas generating device 21 through the third pipeline 323, thereby facilitating pipeline connection between the gas generating device 21, the vacuum pump 31 and the adsorption hole 33, and avoiding the need of arranging a separate pipeline to connect the gas generating device 21 and the adsorption nozzle 4, and the structure is simple and convenient to connect.
Further, the apparatus for manufacturing a semiconductor chip 100 further includes a control device, a first valve 51, and a second valve 52. Specifically, as shown in fig. 4, the second pipeline 322 is provided with a first valve 51, the third pipeline 323 is provided with a second valve 52, the on/off between the vacuum pump 31 and the adsorption nozzle 4 can be controlled by the first valve 51, and the on/off between the gas generating device 21 and the adsorption nozzle 4 can be controlled by the second valve 52, and thus, the purge gas injection and the formation of the negative pressure of the adsorption nozzle 4 can be controlled by controlling the first valve 51 and the second valve 52. The control device is respectively connected with the first valve 51 and the second valve 52 and used for controlling the opening and closing of the first valve 51 and the second valve 52, specifically, the second valve 52 is closed when the first valve 51 is opened, and the second valve 52 is opened when the first valve 51 is closed, so that the second valve 52 is closed and the first valve 51 is opened when the semiconductor chip 5 is grabbed, so that the semiconductor chip 5 can be adsorbed and connected with the mechanical arm 11, when the mechanical arm 11 needs to be cleaned, the second valve 52 is opened, and the first valve 51 is closed so that the adsorption spray nozzle can spray cleaning gas to clean corrosive gas around the mechanical arm 11.
Further, the control device can control the second valve 52 and the first valve 51 to be opened or closed periodically, so that after the mechanical arm accumulates certain corrosive gas for a long time, the second valve 52 can be opened periodically through the control device to clean the mechanical arm 11, the cleaning effect of the mechanical arm 11 is improved, and manual shutdown detection is not needed.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. An apparatus for manufacturing a semiconductor chip, comprising:
the semiconductor conveying device comprises a mechanical arm and a vacuum adsorption device, wherein an adsorption hole is formed in the mechanical arm, and the adsorption hole is communicated with the vacuum adsorption device and used for adsorbing a semiconductor chip;
a gas purging device, the gas purging device comprising: gaseous generating device and gas injection apparatus, gaseous generating device is used for providing for gas injection apparatus and cleans gas, gas injection apparatus with gaseous generating device links to each other in order to robotic arm regularly sprays clean gas, gas injection apparatus establishes robotic arm is last and the orientation adsorption orifices department is jet-propelled, gaseous cleaning apparatus be used for to robotic arm blowout cleans gas in order to right robotic arm cleans, the last adsorption nozzle that is equipped with of robotic arm, the adsorption orifices is formed in the adsorption nozzle and along adsorption nozzle's axial runs through adsorption nozzle, be formed with on adsorption nozzle's the lateral wall with the fumarole of adsorption orifices intercommunication.
2. The manufacturing apparatus of a semiconductor chip as recited in claim 1, wherein said vacuum suction means includes a vacuum pump and a first pipe connected between said suction hole and said vacuum pump, said gas injection means is disposed adjacent to said suction hole, and said gas generation means and said gas injection means are communicated through a second pipe.
3. The manufacturing apparatus of a semiconductor chip as recited in claim 1, wherein said vacuum suction means includes a vacuum pump and a first pipe connected between said suction hole and said vacuum pump, said gas generating means being in communication with said suction nozzle.
4. The apparatus of claim 3, further comprising a shield portion movably disposed at the air injection hole between an open position and a closed position.
5. The apparatus for manufacturing a semiconductor chip as recited in claim 3, wherein a plurality of the adsorption nozzles are provided on an upper surface of the gripper portion, and a plurality of the adsorption nozzles are provided on a distal end of the robot arm.
6. The apparatus for manufacturing a semiconductor chip according to claim 2, wherein the first pipe is a three-way pipe, the first pipe includes a first pipe, a second pipe and a third pipe, the first pipe is connected to the second pipe, the third pipe and the adsorption nozzle, the second pipe is connected to the vacuum pump, and the third pipe is connected to the gas generating apparatus.
7. The manufacturing apparatus of semiconductor chips as defined in claim 6, further comprising a control device, wherein said second pipeline is provided with a first valve, said third pipeline is provided with a second valve, and said control device is connected to said first valve and said second valve respectively for controlling the opening and closing of said first valve and said second valve.
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| CN202010391267.3A CN111554595B (en) | 2020-05-11 | 2020-05-11 | Semiconductor chip preparation device |
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| CN202010391267.3A CN111554595B (en) | 2020-05-11 | 2020-05-11 | Semiconductor chip preparation device |
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