CN111527593A - Method for manufacturing electronic device - Google Patents
Method for manufacturing electronic device Download PDFInfo
- Publication number
- CN111527593A CN111527593A CN201880083685.7A CN201880083685A CN111527593A CN 111527593 A CN111527593 A CN 111527593A CN 201880083685 A CN201880083685 A CN 201880083685A CN 111527593 A CN111527593 A CN 111527593A
- Authority
- CN
- China
- Prior art keywords
- electronic device
- resin composition
- manufacturing
- sealing
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
Abstract
The method for manufacturing an electronic device of the present invention includes: preparing a component having a copper circuit on a surface thereof; a coating step of forming an OSP film on the copper circuit by coating a solder resist on the surface; and a sealing step of sealing the copper circuit with a sealing resin composition, wherein the sealing step is performed without performing a cleaning step of removing the OSP film formed in the coating step, the sealing resin composition contains an epoxy resin, a curing agent, and an adhesion promoter, and the solder resist contains an imidazole compound.
Description
Technical Field
The present invention relates to a method for manufacturing an electronic device.
Background
Various techniques have been developed for a mold bottom filling sealing material for manufacturing an electronic device in order to improve flowability. As such a technique, for example, the technique described in patent document 1 can be cited. Patent document 1 describes the following: when the filler surface-treated with N-phenyl-3-aminopropyltrimethoxysilane is mixed with a resin material, a low viscosity can be achieved in a wide shear rate range. Further, patent document 1 describes the following: when a resin composition is produced using a filler surface-treated with N-phenyl-3-aminopropyltrimethoxysilane, the cohesiveness of the filler is reduced.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2015-140389
Disclosure of Invention
Technical problem to be solved by the invention
In a copper circuit disposed on a substrate such as a printed wiring board, for example, a solder resist is applied to suppress oxidation of the copper circuit in the production process. As a result, a film (organic solder resist film, OSP film: organic soldermask film) for preventing oxidation of the copper circuit is formed on the surface of the copper circuit.
In a conventional method for manufacturing an electronic device, when a copper circuit is sealed with a sealing resin composition, an OSP film is washed and removed in advance. However, the process of removing the OSP film may result in a decrease in the productivity of the electronic device.
In order to improve the productivity of electronic devices, the inventors of the present invention have studied to manufacture electronic devices by using the sealing material described in patent document 1 without removing the OSP film by cleaning. However, it was confirmed that when the conventional sealing material was used, the adhesion between the cured product of the sealing material and the copper circuit was lowered.
The invention provides a method for manufacturing an electronic device, which improves the adhesion between a cured product of a sealing resin composition and a copper circuit on the premise of not carrying out a cleaning process for removing an OSP film.
Means for solving the technical problem
The present inventors have studied the raw material components of the encapsulating resin composition in order to improve the adhesion between the cured product of the encapsulating resin composition and the copper circuit without performing the cleaning step for removing the OSP film. As a result, it was found that when the sealing resin composition contains a specific adhesion promoter, the OSP film is broken when the sealing resin composition is introduced, and the adhesion between the sealing resin composition and the copper circuit is improved without performing a cleaning step.
From the above, the inventors of the present invention have found that the adhesion between a sealing resin composition and a copper circuit is improved by using a specific adhesion promoter, and have completed the present invention.
According to the present invention, there is provided a method of manufacturing an electronic device, comprising:
preparing a component having a copper circuit on a surface thereof;
a coating step of forming an OSP film on the copper circuit by coating a solder resist (preflux) on the surface; and
a sealing step of sealing the copper circuit with a sealing resin composition,
the sealing step is performed without performing a cleaning step for removing the OSP film formed in the coating step,
the sealing resin composition comprises an epoxy resin, a curing agent and an adhesion promoter,
the solder resist contains an imidazole compound.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, it is possible to provide a method for manufacturing an electronic device in which adhesion between a sealing resin composition and a copper circuit is improved even when the copper circuit on which an OSP film is formed is sealed.
Detailed Description
Hereinafter, embodiments of the present invention will be described.
A method for manufacturing an electronic device according to the present embodiment is a method for manufacturing an electronic device by sealing a member having a copper circuit on a surface thereof with a sealing resin composition, the method including: preparing a component having a copper circuit on a surface thereof; a coating step of forming an OSP film on the copper circuit by coating a solder resist on the surface; and a sealing step of sealing the copper circuit with a sealing resin composition, wherein the sealing step is performed without performing a cleaning step of removing the OSP film formed in the coating step, the sealing resin composition contains an epoxy resin, a curing agent, and an adhesion promoter, and the solder resist contains an imidazole compound.
In a copper circuit disposed on a substrate such as a printed wiring board, for example, a solder resist is applied to suppress oxidation of the copper circuit in the production process. Thus, an OSP film for preventing oxidation of the copper circuit is formed on the surface of the copper circuit.
In a conventional method for manufacturing an electronic device, when a copper circuit is sealed with a sealing resin composition, an OSP film for suppressing oxidation of the copper circuit is not removed in a cleaning step. Thus, when a conventional sealing resin composition is used to seal a copper circuit without removing the OSP film, the OSP film remains in the electronic device. The residual OSP film may reduce the adhesion between the copper circuit and the sealing resin composition.
Further, when a cleaning process for removing the OSP film is performed, productivity of the electronic device is lowered.
Therefore, the present inventors have studied the raw material components of the encapsulating resin composition in order to improve the adhesion between the cured product of the encapsulating resin composition and the copper circuit without performing the cleaning step for removing the OSP film. As a result, it was found that when the sealing resin composition contains a specific adhesion promoter, the OSP film is broken when the sealing resin composition is introduced, and the adhesion between the sealing resin composition and the copper circuit is improved without performing a cleaning step.
The detailed mechanism is not determined, but the reason is presumed as follows.
First, a solder resist containing an imidazole compound is applied to a copper circuit, whereby a complex compound is formed by the interaction between the imidazole compound and a copper atom contained in the copper circuit. The OSP film has a complex layer composed of the complex. When the sealing resin composition contains a specific adhesion promoter described later, the complex formed from the imidazole compound and the copper atom in the complex layer can be broken when the sealing resin composition seals a copper circuit. Thus, when a copper circuit is sealed with a sealing resin composition containing a specific adhesion promoter, the OSP film can be sealed while being broken. It is also presumed that the bonding assistant and the copper atom of the copper circuit form a complex due to the interaction between the lone pair electrons of the bonding assistant and the copper atom of the copper circuit. Thus, the cured product of the sealing resin composition containing the specific adhesion promoter has improved adhesion to a copper circuit as compared with a conventional sealing resin composition.
From the above, it is presumed that the method for manufacturing an electronic device according to the present embodiment can improve the adhesion between the cured product of the sealing resin composition and the copper circuit without performing the cleaning step for removing the OSP film.
The OSP film includes, for example, an imidazole layer formed of an imidazole compound in which a complex compound is not formed, in addition to the complex compound layer described above. Here, the imidazole layer is formed by intermolecular force of the imidazole compound, and the intermolecular interaction is weaker than that of the complex layer formed by the ionic bond of the complex. Thus, in the method for manufacturing an electronic device according to the present embodiment, the complex layer made of the complex can be broken, and the imidazole layer can also be broken. Therefore, according to the method for manufacturing an electronic device according to the present embodiment, the adhesion between the cured product of the sealing resin composition and the copper circuit can be improved without performing the cleaning step for removing the OSP film.
First, raw material components of the sealing resin composition used in the method for manufacturing an electronic device according to the present embodiment will be described.
The sealing resin composition contains an epoxy resin, a curing agent, and an adhesion promoter.
(epoxy resin)
The sealing resin composition according to the present embodiment contains an epoxy resin. The epoxy resin is not limited, and any of monomers, oligomers, and polymers having 2 or more epoxy groups in 1 molecule can be used regardless of the molecular weight and molecular structure.
Specific examples of the epoxy resin include biphenyl type epoxy resins; bisphenol epoxy resins such as bisphenol a epoxy resin, bisphenol F epoxy resin, and tetramethylbisphenol F epoxy resin; stilbene type epoxy resins; novolac type epoxy resins such as phenol novolac type epoxy resins and cresol novolac type epoxy resins; polyfunctional epoxy resins such as a triphenylepoxy resin exemplified by a triphenol methane type epoxy resin, an alkyl-modified triphenol methane type epoxy resin, and the like; phenol aralkyl type epoxy resins such as phenol aralkyl type epoxy resins having a phenylene skeleton, naphthol aralkyl type epoxy resins having a phenylene skeleton, phenol aralkyl type epoxy resins having a biphenylene skeleton (biphenyl aralkyl type epoxy resins), and naphthol aralkyl type epoxy resins having a biphenylene skeleton; naphthol type epoxy resins such as dihydroxynaphthalene type epoxy resins and epoxy resins obtained by glycidyletherifying a 2-mer of dihydroxynaphthalene; triazine nucleus-containing epoxy resins such as triglycidyl triisocyanurate and monoallyl diglycidyl isocyanurate; and a phenol epoxy resin modified with a bridged hydrocarbon compound such as a dicyclopentadiene-modified phenol epoxy resin. As the epoxy resin, these can be used alone of 1, also can be used simultaneously with different 2 or more.
(curing agent)
The sealing resin composition according to the present embodiment contains a curing agent. As the curing agent contained in the sealing resin composition, there are specifically 3 types of addition polymerization type curing agent, catalyst type curing agent and condensation type curing agent.
Specific examples of the addition polymerization type curing agent used as the above curing agent include: polyamine compounds including aliphatic polyamines such as Diethylenetriamine (DETA), triethylenetetramine (TETA), and m-xylylenediamine (MXDA), aromatic polyamines such as diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and diaminodiphenylsulfone (DDS), Dicyandiamide (DICY), and organic acid dihydrazide; acid anhydrides including alicyclic acid anhydrides such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA), aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA) and benzophenonetetracarboxylic acid (BTDA), and the like; phenolic resin curing agents such as novolak-type phenolic resins, polyvinyl phenols, and aralkyl-type phenolic resins; polythiol compounds such as polysulfides, thioesters and thioethers; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; and carboxylic acid-containing polyester resins. The addition polymerization type curing agent may contain 1 or 2 or more selected from the above specific examples.
Specific examples of the catalyst-type curing agent used as the curing agent include: tertiary amine compounds such as Benzyldimethylamine (BDMA) and 2, 4, 6-tris-dimethylaminomethylphenol (DMP-30); imidazole compounds such as 2-methylimidazole and 2-ethyl-4-methylimidazole (EMI 24); BF (BF) generator3Lewis acids such as complexes, etc. The catalyst-type curing agent may include 1 or 2 or more selected from the above-mentioned specific examples.
Specific examples of the condensed type curing agent used as the curing agent include: resol-type phenol resin (resol-type phenol resin); urea resins such as methylol group-containing urea resins; melamine resins such as methylol group-containing melamine resins, and the like. The condensed curing agent may contain 1 or 2 or more selected from the above-mentioned specific examples.
Among the above curing agents, a phenol resin-based curing agent is preferably contained. This enables the epoxy resin to be appropriately cured. Further, the adhesion can be further improved by the interaction between the curing agent and the adhesion promoter.
As the phenolic resin curing agent, any of monomers, oligomers, and polymers having 2 or more phenolic hydroxyl groups in 1 molecule can be used, and the molecular weight and the molecular structure thereof are not limited.
Specific examples of the phenolic resin-based curing agent used as the curing agent include: novolak-type phenol resins such as phenol novolak resins, cresol novolak resins, bisphenol novolak resins, and phenol-diphenol novolak resins; polyvinyl phenol; multifunctional phenol resins such as triphenylmethane phenol resins; modified phenolic resins such as terpene-modified phenolic resin and dicyclopentadiene-modified phenolic resin; phenol aralkyl type phenol resins such as phenol aralkyl resins having a phenylene skeleton, phenol aralkyl resins having a biphenylene skeleton (biphenyl aralkyl type phenol resins), naphthol aralkyl resins having a phenylene skeleton, and naphthol aralkyl resins having a biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F. The phenolic resin curing agent may contain 1 or 2 or more selected from the above specific examples.
(Advance adjuvant)
The adhesion promoter preferably has a specific functional group.
Specific examples of the functional group include a thiol group, a carboxyl group, and an amino group. By having these specific functional groups, the adhesion promoter is able to break the OSP film. When the adhesion promoter has lone-pair electrons, the lone-pair electrons interact with copper atoms of the copper circuit after the OSP film is broken, and the adhesion between the cured product of the sealing resin composition and the copper circuit can be improved.
As the adhesion promoter, 1 or 2 or more of the specific examples described above can be used in combination as the specific functional group.
The detailed mechanism is not clear, and the mechanism for breaking the OSP film is presumed as follows.
It is presumed that when the adhesion promoter contains a carboxyl group as a specific functional group, the complex layer of the OSP film becomes acidic, and the complex becomes unstable, so that the OSP film is broken.
Further, it is presumed that when the adhesion promoter contains a thiol group or an amino group as a specific functional group, a complex exchange reaction occurs between the adhesion promoter and the imidazole compound of the solder resist in the complex layer of the OSP film, and the OSP film is broken.
The amino group in the present embodiment specifically includes a primary amino group, a secondary amino group, and a tertiary amino group that do not enter a hetero ring, and a heterocyclic amino group that enters a hetero ring as a primary amino group or a secondary amino group. The amino group preferably includes, for example, a heterocyclic amino group. This makes it possible to strongly interact the adhesion promoter of the sealing resin composition with the copper atoms of the copper circuit, thereby further improving the adhesion.
Specific examples of the heterocyclic amino group include triazine and triazole. As the triazine, for example, a structure represented by the following general formula (H1) is preferable. The triazole is preferably a structure represented by the following general formula (H2), for example.
(in the above general formula (H1), R is each independently a group formed of 1 or 2 or more atoms selected from the group consisting of a hydrogen atom, a carbon atom, a silicon atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a fluorine atom, a chlorine atom and a bromine atom.)
(in the above general formula (H2), R is each independently a group formed of 1 or 2 or more atoms selected from the group consisting of a hydrogen atom, a carbon atom, a silicon atom, a nitrogen atom, a phosphorus atom, an oxygen atom, a sulfur atom, a fluorine atom, a chlorine atom and a bromine atom.)
In the general formulae (H1) and (H2), when R contains a carbon atom, for example, an organic group having 1 to 30 carbon atoms is preferable, an organic group having 1 to 10 carbon atoms is more preferable, and an organic group having 1 to 5 carbon atoms is even more preferable.
And, when R is an organic group containing a carbon atom, R, for example, preferably contains a hydroxyl group.
In the general formulae (H1) and (H2), for example, at least 1 of the plurality of R groups preferably contains at least 1 or more selected from a carboxyl group, a thiol group, and an amino group, and more preferably contains at least an amino group. This can break the OSP film and improve the adhesion between the cured product of the sealing resin composition and the copper circuit.
In the general formulae (H1) and (H2), for example, 1 or more R groups in the plurality of R groups preferably contain 1 or more species selected from the group consisting of a carboxyl group, a thiol group, and an amino group, and more preferably 2 or more R groups contain 1 or more species selected from the group consisting of a carboxyl group, a thiol group, and an amino group. This can break the OSP film and improve the adhesion between the cured product of the sealing resin composition and the copper circuit.
Among the adhesion promoters, examples of the adhesion promoter containing a carboxyl group include stearic acid and the like.
Among the adhesion promoters, specific examples of the adhesion promoter containing a thiol group include γ -mercaptopropyltrimethoxysilane, γ -mercaptopropyltriethoxysilane, and 3-amino-5-mercapto-1, 2, 4-triazole.
Among the adhesion promoters, specific examples of the adhesion promoter containing an amino group include 4, 6-diamino-1, 3, 5-triazine-2-ol, 3-amino-5-mercapto-1, 2, 4-triazole and the like.
The lower limit of the content of the adhesion promoter in the sealing resin composition is, for example, preferably 0.010 parts by mass or more, more preferably 0.015 parts by mass or more, further preferably 0.020 parts by mass or more, further preferably 0.025 parts by mass or more, and particularly preferably 0.030 parts by mass or more, with respect to the total solid content of the sealing resin composition. Thereby, the OSP film can be suitably broken.
The upper limit of the content of the adhesion promoter in the sealing resin composition is, for example, preferably 1.0 part by mass or less, more preferably 0.7 part by mass or less, further preferably 0.5 part by mass or less, and further preferably 0.3 part by mass or less, based on the total solid content of the sealing resin composition. This can suppress the occurrence of aggregation of particles and the generation of insoluble foreign matter in a solvent or the like.
In the present embodiment, the total solid content of the sealing resin composition means the total of the raw material components from which the solvent is removed.
The lower limit of the content of the adhesion promoter in the sealing resin composition is, for example, preferably 0.10 parts by mass or more, more preferably 0.15 parts by mass or more, still more preferably 0.20 parts by mass or more, still more preferably 0.30 parts by mass or more, and particularly preferably 0.40 parts by mass or more, based on the total resin amount. Thus, after the OSP film is broken, the adhesion promoter dispersed in the sealing resin composition properly interacts with copper atoms, and the adhesion can be improved.
The upper limit value of the content of the adhesion promoter in the sealing resin composition is, for example, preferably 10 parts by mass or less, more preferably 8 parts by mass or less, and further preferably 6 parts by mass or less, with respect to the total resin amount.
In the present embodiment, the resin amount represents the total amount of the epoxy resin and the curing agent.
(other Components)
If necessary, 1 or 2 or more of various additives such as a curing accelerator, an inorganic filler, a coupling agent, a release agent, a colorant, a flame retardant, an ion scavenger, and a low stress agent can be appropriately blended in the sealing resin composition.
(curing accelerators)
The curing accelerator is not limited as long as it can accelerate the curing reaction of the epoxy resin and the curing agent, and can be selected according to the type of the epoxy resin and the curing agent.
Specific examples of the curing accelerator include compounds containing a phosphorus atom such as onium salt compounds, organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, and adducts of phosphonium compounds and silane compounds; imidazole compounds such as 2-methylimidazole, 2-ethyl-4-methylimidazole (EMI24), 2-phenyl-4-methylimidazole (2P4MZ), 2-phenylimidazole (2PZ), 2-phenyl-4-methyl-5-hydroxyimidazole (2P4MHZ), and 1-benzyl-2-phenylimidazole (1B2 PZ); amidines or tertiary amines exemplified by 1, 8-diazabicyclo [5.4.0] undecene-7, benzyldimethylamine, etc.; and nitrogen atom-containing compounds such as the amidines and quaternary ammonium salts of the tertiary amines. As the curing accelerator, 1 or a combination of 2 or more of the above specific examples can be used.
(inorganic Filler)
The inorganic filler is not limited, and can be selected as appropriate according to the structure of the electronic device, the mechanical strength required for the electronic device, and the thermal characteristics.
Specific examples of the inorganic filler include silica such as fused crushed silica, fused spherical silica, crystalline silica, secondary aggregation silica, and spherical fine powder silica; metal compounds such as aluminum oxide, silicon nitride, aluminum nitride, boron nitride, titanium oxide, silicon carbide, aluminum hydroxide, magnesium hydroxide, and titanium white; talc; clay; mica; glass fibers, and the like. As the inorganic filler, 1 kind or 2 or more kinds of the above specific examples can be used in combination. As the inorganic filler, for example, silica is preferably used among the above specific examples. This allows the inorganic filler and the adhesion promoter to interact with each other, thereby further improving adhesion.
In the present embodiment, the volume-based cumulative 50% particle diameter (D) of the filler50) The lower limit of (B) is, for example, preferably 0.1 μm or more, more preferably 0.3 μm or more, and still more preferably 0.5 μm or more. This prevents the mold from being clogged due to the aggregation of the inorganic filler during molding of the sealing resin composition, thereby improving the productivity of the electronic device.
And a cumulative 50% particle diameter (D) based on the volume of the inorganic filler50) The upper limit of (B) is, for example, preferably 50 μm or less, more preferably 30 μm or less, still more preferably 20 μm or less, still more preferably 10 μm or less, and particularly preferably 5 μm or less. Thus, the occurrence of clogging in the mold in the sealing step can be reliably suppressed, and the productivity of the electronic device can be improved.
In addition, when an electronic device having a small clearance for entry of a sealing resin composition such as a flip chip package is manufactured, the sealing resin composition is a mold underfill material. At this time, the inorganic filler has a cumulative 50% particle diameter (D) on a volume basis50) For example, it is preferably 1 μm to 20 μm. This can improve the filling property of the sealing resin composition.
Wherein the filler material has a volume-based cumulative 50% particle diameter (D)50) For example, the particle size distribution of the particles can be measured and calculated on a volume basis using a commercially available laser diffraction particle size distribution measuring apparatus (for example, SALD-7000, manufactured by Shimadzu corporation).
(coupling agent)
The coupling agent is not limited, and a known coupling agent used in a sealing resin composition can be used.
Specific examples of the coupling agent include vinyl silanes such as vinyltrimethoxysilane and vinyltriethoxysilane; epoxy silanes such as 2- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane and 3-glycidoxypropyltriethoxysilane; styryl silanes such as p-styryl trimethoxysilane; methacryloylsilanes such as 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane and 3-methacryloxypropyltriethoxysilane; acryl silane such as 3-acryloxypropyltrimethoxysilane; aminosilanes such as N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1, 3-dimethyl-butylene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, and phenylaminopropyltrimethoxysilane; isocyanurate silane; an alkylsilane; ureido silanes such as 3-ureidopropyltrialkoxysilane; mercaptosilanes such as 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane; isocyanate silanes such as 3-isocyanatopropyltriethoxysilane; a titanium-based compound; aluminum chelates; aluminum/zirconium-based compounds, and the like. As the coupling agent, 1 or 2 or more of the above-mentioned specific examples can be blended.
(mold releasing agent)
The release agent is not limited, and a known release agent used for a sealing resin composition can be used.
Specific examples of the release agent include natural waxes such as carnauba wax, synthetic waxes such as diethanolamine-ditartrate, higher fatty acids such as zinc stearate, metal salts thereof, and paraffin wax. The release agent may be blended with 1 or 2 or more of the above specific examples.
(coloring agent)
The colorant is not limited, and a known colorant used in a sealing resin composition can be used.
Specific examples of the colorant include carbon black, red iron oxide, and titanium oxide. The colorant may be blended with 1 or 2 or more of the above specific examples.
(flame retardant)
The flame retardant is not limited, and known flame retardants used in sealing resin compositions can be used.
Specific examples of the flame retardant include aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene. The flame retardant may be blended with 1 or 2 or more of the above specific examples.
(ion scavenger)
The ion scavenger is not limited, and a known ion scavenger used in a sealing resin composition can be used.
Specific examples of the ion scavenger include hydrotalcite, zeolite, and bismuth hydroxide.
(Low-stress agent)
The low-stress agent is not limited, and a known low-stress agent used in a sealing resin composition can be used.
Specific examples of the low-stress agent include: organic silicon compounds such as silicone oil and silicone rubber; a polybutadiene compound; acrylonitrile butadiene copolymers, and the like. The low-stress agent may be blended with 1 or 2 or more of the above specific examples.
(method for producing sealing resin composition)
Next, a method for producing the sealing resin composition according to the present embodiment will be described.
The method for producing a sealing resin composition according to the present embodiment includes, for example, a mixing step (S1) of mixing the above-described raw material components to prepare a mixture, and a molding step (S2) of subsequently molding the mixture.
(mixing step (S1))
The mixing step is a step of mixing the raw material components to prepare a mixture. The method of mixing is not limited, and a known method can be used depending on the components to be used.
Specifically, in the mixing step, the raw material components contained in the sealing resin composition are uniformly mixed by a stirrer or the like. Subsequently, the mixture is melt-kneaded by a kneader such as a roll, a kneader, or an extruder to prepare a mixture.
(Molding Process (S2))
Next to the mixing step (S1), a molding step (S2) of molding the mixture is performed.
The molding method is not limited, and a known method can be used depending on the shape of the sealing resin composition. The shape of the sealing resin composition is not limited, and examples thereof include a pellet shape, a powder shape, a tablet shape, and the like. The shape of the sealing resin composition can be selected according to the molding method.
The molding step for producing the sealing resin composition formed in a pellet shape includes, for example, a step of pulverizing a mixture which is melt-kneaded and then cooled. Further, for example, the sealing resin composition formed into a pellet shape may be sieved to adjust the size of the pellet. Further, the sealing resin composition formed into a pellet shape may be treated by, for example, a centrifugal powdering method, a thermal cutting method, or the like to adjust dispersibility, fluidity, or the like.
The molding step for producing the sealing resin composition formed in a powder shape includes, for example, a step of pulverizing the mixture into a particulate sealing resin composition, and then further pulverizing the particulate sealing resin composition.
The molding step of producing the sealing resin composition formed into a tablet shape includes, for example, a step of pulverizing the mixture into a pellet-shaped sealing resin composition, and then tabletting the pellet-shaped sealing resin composition.
The molding step of producing the sealing resin composition formed into a sheet shape includes, for example, a step of melt-kneading and then subjecting the mixture to extrusion molding or calender molding.
Next, a method for manufacturing an electronic device according to the present embodiment will be described in detail.
(method of manufacturing electronic device)
The method for manufacturing an electronic device according to the present embodiment includes: a coating step of forming an OSP film on a copper circuit by coating a solder resist on the surface of a component having the copper circuit on the surface; and a sealing step of sealing the copper circuit with the sealing resin composition.
After the coating step and before the sealing step, a cleaning step for removing the OSP film is not performed.
After the coating step and before the sealing step, a reflow step of welding may be included, for example.
(coating Process)
First, a coating step of forming an OSP film on a copper circuit by coating a solder resist on the surface of a component having a copper circuit on the surface is performed. Thus, oxidation of the copper circuit can be suppressed in the manufacturing process of the electronic device. Therefore, the electrical reliability of the electronic device can be improved.
The method of applying the solder resist is not limited, and examples thereof include a method of immersing a member having a copper circuit on the surface in a solution containing the solder resist. At this time, the thickness of the OSP film can be adjusted by controlling the dipping time.
As described above, the OSP film has, for example, a coordination compound layer composed of a coordination compound of a solder-retentive agent and a copper atom. Also, the OSP film may include, for example, an imidazole layer formed of an imidazole compound in which a coordination compound is not formed, in addition to the above-described coordination compound layer.
The member having a copper circuit on the surface is not limited, and for example, a substrate on which a copper circuit is disposed can be used.
Specific examples of the substrate according to the present embodiment include a flexible printed circuit board, an interposer, and a wiring board such as a lead frame.
The material for forming the substrate according to the present embodiment is not limited, and examples thereof include organic materials such as resins, and inorganic materials such as ceramics.
The sealing resin composition according to the present embodiment is also preferable in that it can exhibit appropriate adhesion to a member containing copper, such as a copper pad on which an OSP film is formed, without removing the OSP film.
As the solder resist according to the present embodiment, a solder resist containing an imidazole compound is used.
The imidazole compound is not limited as long as it is a conventionally known compound that can be used as a solder resist, and for example, imidazole compounds represented by the following general formulae (I1) and (I2) can be used.
(in the general formulae (I1) and (I2), a plurality of RIEach independently represents hydrogen or an organic group having 1 to 30 carbon atoms. Plural RIMay be the same as or different from each other. )
In the above general formulae (I1) and (I2), R isISpecific examples of the organic group having 1 to 30 carbon atoms include alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, pentyl, neopentyl, hexyl, heptyl, octyl, nonyl and decyl; aryl groups such as phenyl, naphthyl, and anthracenyl; and haloalkyl groups in which 1 or more hydrogen atoms of the alkyl group or the aryl group are substituted with halogen atoms.
Specific examples of the imidazole compound include imidazole, 2-methylimidazole, 2- (1-methylpentyl) imidazole, 2-ethyl-4-methylimidazole, 2, 4, 5-trimethylimidazole, 4, 5-dichloro-2-ethylimidazole, 2-methylbenzimidazole, 2-heptyl-5, 6-dimethylbenzimidazole, 2-octyl-5-chlorobenzimidazole, 4-fluorobenzimidazole, 2-pentyl-5-iodobenzimidazole, 2, 4-diphenylimidazole, 2- (2, 4-diethyl) -4- (3-propyl-5-octyl) -5-isobutylimidazole, 2-phenyl-4- (1-naphthyl) imidazole, 2-ethyl-4- (1-naphthyl) imidazole, and 2-ethyl-4-methylbenzimidazole, 2- (1-naphthyl) -4-phenylimidazole, 2-phenylbenzimidazole, 2- (1-naphthyl) benzimidazole, 2-cyclohexylbenzimidazole, and the like.
As the imidazole compound, 1 or 2 or more of the above specific examples can be used in combination.
The upper limit of the thickness of the OSP film formed by the coating step is, for example, preferably 1.0 μm or less, more preferably 0.8 μm or less, still more preferably 0.6 μm or less, yet more preferably 0.4 μm or less, and particularly preferably 0.3 μm or less. Accordingly, the OSP film is easily broken by the sealing resin composition in the sealing step, and the adhesion between the cured product of the sealing resin composition and the copper circuit can be further improved.
The lower limit of the thickness of the OSP film formed in the coating step is, for example, preferably 0.05 μm or more, more preferably 0.08 μm or more, still more preferably 0.10 μm or more, and still more preferably 0.15 μm or more. This can further suppress the oxidation of the copper circuit. Therefore, the electrical reliability of the electronic device can be improved. Further, according to the method for manufacturing an electronic device according to the present embodiment, even when the thickness of the OSP film is equal to or more than the lower limit value, the OSP film can be broken without performing a cleaning step, and the adhesion between the cured product of the sealing resin composition and the copper circuit can be preferably improved.
(sealing Process)
After the coating step, a sealing step of sealing the copper circuit with the sealing resin composition is performed without performing a cleaning step of removing the OSP film. The sealing step can be performed by molding, for example.
The molding method is not limited, and a transfer molding method, a compression molding method, an injection molding method, and the like can be used. As a molding method for sealing, a transfer molding method is preferably used in the above specific example.
In the present embodiment, the molding conditions are not limited, and for example, pre-curing may be performed by performing heat treatment at a temperature of 120 ℃ to 200 ℃ for 10 seconds to 30 minutes, and post-curing (post cure) may be performed by performing heat treatment at a temperature of 120 ℃ to 200 ℃ for 1 hour to 24 hours.
In the present embodiment, the sealing resin composition that has undergone post-curing is referred to as a cured product.
The lower limit of the molding temperature is, for example, preferably 100 ℃ or higher, more preferably 110 ℃ or higher, still more preferably 120 ℃ or higher, and still more preferably 150 ℃ or higher. The higher the molding temperature, the more easily the OSP film is broken by the sealing resin composition. This improves the adhesion between the cured product of the sealing resin composition and the copper circuit.
The upper limit of the molding temperature may be, for example, 240 ℃ or lower, or 220 ℃ or lower.
(cleaning Process)
In the method for manufacturing an electronic device according to the present embodiment, the cleaning step for removing the OSP film is not performed after the coating step and before the sealing step. This is preferable in terms of improving the productivity of the electronic device.
In a conventional method for manufacturing an electronic device, a cleaning step for removing an OSP film, for example, is not performed. Therefore, there is room for improvement in adhesion between the sealing resin composition and copper.
When it is necessary to remove the OSP film, a chemical treatment using a chemical solution is specifically given as a cleaning step carried out in a conventional method for manufacturing an electronic device. To remove the complex layer of the OSP film, as a chemical solution, adipic acid, azelaic acid, didecanedioic acid, citric acid, glycolic acid, succinic acid, salicylic acid, diglycolic acid, dipicolinic acid, dibutylanilide diglycolic acid, suberic acid, sebacic acid, thioglycolic acid, terephthalic acid, dodecanedioic acid, p-hydroxyphenylacetic acid, picolinic acid, phenylsuccinic acid, phthalic acid, fumaric acid, maleic acid, malonic acid, lauric acid, benzoic acid, tartaric acid, tris (2-carboxyethyl) isocyanurate, glycine, 1, 3-cyclohexanedicarboxylic acid, 2-bis (hydroxymethyl) propionic acid, 2-bis (hydroxymethyl) butyric acid, 2, 3-dihydroxybenzoic acid, 2, 4-diethylglutaric acid, 2-quinolinecarboxylic acid, 3-hydroxybenzoic acid, malic acid, maleic acid, fumaric acid, maleic acid, malonic acid, succinic, Organic acids such as p-anisic acid, stearic acid, 12-hydroxystearic acid, oleic acid, linoleic acid, linolenic acid, dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid.
In addition, for example, the flux used for soldering may contain the organic acid. This causes the OSP film around the solder to be broken at the portion where the flux exists, and the OSP film can be removed by cleaning the flux residue. However, the OSP film remains outside the solder periphery, which causes the adhesion between the cured product of the sealing material and the copper circuit to deteriorate.
(reflow Process)
The method of manufacturing an electronic device according to the present embodiment may include, for example, a reflow step of performing soldering after the coating step and before the sealing step.
In the reflow step, the soldering is performed at a temperature of, for example, 180 ℃ to 300 ℃. The complex layer of the OSP film is strengthened by heat treatment in the reflow process. In the method for manufacturing an electronic device according to the present embodiment, it is preferable that the complex layer of the OSP film is broken in the sealing step even if the complex layer is strengthened by the reflow step.
Next, an electronic device according to the present embodiment will be described.
(electronic device)
The electronic Device according to the present embodiment is not limited, and specific examples thereof include a printed wiring board, a Molded circuit Device (MID), and the like.
The printed wiring board is not limited to the above-mentioned ones, specifically, MAP (Mold Array Package), QFP (Quad Flat Package), SOP (Small Outline Package), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), BGA (Ball Grid Array, Ball Grid Array Package), LF-BGA (Lead frame BGA, Ball Grid Array Package), FCBGA (Flip Chip BGA, Flip Chip Ball Grid Array Package), mapgrid Array Process (die Array Process Ball Grid Array Package), eWLB (Embedded wave-Level BGA, BGA-Level BGA, Fan-In (Fan-In) type Fan-Out (Fan-Out) type semiconductor packages, etc.; SIP (System In package), and the like.
The molded circuit component is not limited, and specific examples thereof include molded circuit components used for automobile parts.
The present invention has been described above with reference to the embodiments, but the present invention is not limited to the above embodiments, and the configuration thereof can be changed within a range not changing the gist of the present invention.
Examples
The present invention will be described in detail below with reference to examples, but the present invention is not limited to these examples.
First, the raw material components of the sealing resin composition will be described.
(epoxy resin)
Epoxy resin 1: biphenylalkyl epoxy resin (NC 3000, Nippon Kagaku Co., Ltd.)
Epoxy resin 2: mixture of triphenylmethane type epoxy resin and biphenyl type epoxy resin (produced by Mitsubishi chemical corporation, YL6677)
(curing agent)
Curing agent 1: biphenylaralkyl phenol resin (MEH-7851 SS, manufactured by Minghe chemical Co., Ltd.)
Curing agent 2: phenol resin of triphenylmethane type (AIR WATER INC. manufactured by HE910-20)
(Advance adjuvant)
Adhesion promoter 1: gamma-mercaptopropyltrimethoxysilane having a thiol group (produced by Chisso Corporation, S810)
Adhesion promoter 2: gamma-mercaptopropyltriethoxysilane having a thiol group (produced by Momentive Performance materials Japan LLC, SILQUEST A-1891SILANE)
Adhesion promoter 3: stearic acid having carboxyl group (SR-SAKURA, manufactured by Nichiya oil Co., Ltd.)
Adhesion promoter 4: 2, 4-diamino-6- (4, 5-dihydroxypentyl) -1, 3, 5-triazine having tertiary amino group and heterocyclic amino group (produced by four national chemical Co., Ltd.)
Adhesion promoter 5: 3-amino-5-mercapto-1, 2, 4-triazoles having a thiol group, a tertiary amino group, and a heterocyclic amino group (NIPPON CARBIDE INDUSTRIES CO., INC. produced)
The following formulas (Al) to (A5) represent structural formulas of the adhesion promoters 1 to 5.
HS-(CH2)3-Si(OCH3)3(A1)
HS-(CH2)3-Si(OC2H5)3(A2)
C17H35-COOH (A3)
(curing accelerators)
Curing accelerator 1: an adduct of a phosphonium compound represented by the following formula (P1) and a silane compound was synthesized to be used as the curing accelerator 1. The synthesis method will be described in detail below.
First, 249.5g of phenyltrimethoxysilane and 384.0g of 2, 3-dihydroxynaphthalene were added to and dissolved in a flask containing 1800g of methanol, and 231.5g of a 28% sodium methoxide-methanol solution was added dropwise with stirring at room temperature. Subsequently, a solution prepared by dissolving 503.0g of tetraphenylphosphonium bromide in 600g of methanol was added dropwise to the flask while stirring at room temperature, to precipitate crystals. The precipitated crystals were filtered, washed with water, and vacuum-dried to obtain a solidification accelerator 1 as pink crystals which is an adduct of a phosphonium compound and a silane compound.
(inorganic Filler)
Inorganic filler 1: fused spherical silica (MUF-46V, D, available from Lorson, K.K.)50＝4.3μm)
Inorganic filler 2: spherical Fine powder silica (available from Admatechs Company Limited, SC-2500-SQ, D)50＝0.6μm)
Wherein the filler material has a volume-based cumulative 50% particle diameter (D)50) The particle size distribution of the particles was measured on a volume basis using a laser diffraction particle size distribution measuring apparatus (SALD-7000, manufactured by Shimadzu corporation) and calculated.
(coupling agent)
Coupling agent 1: n-phenyl-3-aminopropyltrimethoxysilane (manufactured by Dow Corning Toray Co., Ltd., CF-4083)
(mold releasing agent)
Mold release agent 1: diethanolamine ditrimeric acid ester (ITOHWAX TP NC133, available from Ito oil Co., Ltd.)
(coloring agent)
Colorant 1: carbon black (carbon #5, Mitsubishi chemical corporation)
(flame retardant)
Flame retardant 1: aluminum hydroxide (produced by Sumitomo chemical Co., Ltd., CL-303)
(ion scavenger)
Ion scavenger 1: hydrotalcite (DHT-4H, from Kyoho chemical industry Co., Ltd.)
(Low-stress agent)
Low-stress agent 1: carboxyl terminal acrylonitrile butadiene copolymer (CTBN 1008SP, produced by PTI Japan Corporation)
(example 1)
First, the components were mixed at a normal temperature by a mixer in the amounts shown in table 1 below, and then heated and kneaded at a temperature of 70 ℃ to 100 ℃. Next, the resin composition was cooled to room temperature and then pulverized to prepare a sealing resin composition for producing the electronic device of example 1.
Next, a printed wiring board having a copper circuit on the surface thereof, the length of which was 15mm × the width of which was 15mm, was prepared. Next, a solder resist (manufactured by four chemical industries, Ltd., GLICOAT-SMD F2(LX) PK) containing an imidazole compound was applied onto the printed wiring board to form an OSP film having a thickness of 0.2 μm.
Then, a flip chip package having a length of 10mm × a width of 10mm × a thickness of 250 μm was disposed on the printed wiring board, and then, reflow processing was performed at a peak temperature of 240 ℃ for 10 seconds in a nitrogen atmosphere to melt the solder bumps, thereby bonding the flip chip package and the printed wiring board. Wherein the reflow process was performed 2 times.
Next, the substrate with the package mounted thereon obtained above was placed in a mold, and the encapsulating epoxy resin composition was injected into the mold using a transfer molding machine under conditions of a mold temperature of 175 ℃ and an injection pressure of 9.8MPa to mold the substrate. Subsequently, the cured product was cured at 175 ℃ for 120 seconds to produce an electronic device.
(examples 2 to 6, comparative example 1)
Electronic devices were produced in the same manner as in example 1 except that the blending combination of the sealing resin composition was changed to those described in examples 2 to 6 and comparative example 1 in table 1 below.
(Cu adhesion)
The following experiment was performed on the electronic devices of examples 1 to 6 and comparative example 1 in order to evaluate the adhesion between the sealing resin composition and the copper circuit.
First, a copper plate having a length of 10mm, a width of 30mm and a thickness of 0.2mm, which is an analog copper circuit, was prepared. Next, a solder resist containing an imidazole compound (manufactured by four chemical industries, Ltd., GLICOAT-SMD F2(LX) PK) was applied to the copper plate to form an OSP film having a thickness of 0.2. mu.m.
Then, heat treatment simulating reflow treatment was performed at a peak temperature of 240 ℃ for 10 seconds in a nitrogen atmosphere. Wherein the heat treatment was performed 2 times.
Next, the copper plate on which the OSP film was formed was placed in a mold, and the encapsulating epoxy resin composition used for manufacturing the electronic devices of examples and comparative example 1 was injected into the mold by a transfer molding machine under conditions of a mold temperature of 175 ℃ and an injection pressure of 9.8MPa, and molded. Next, the OSP film was cured at 175 ℃ for 120 seconds to form a bottom diameter on the copper plate on which the OSP film was formed
A cured product of a cylindrical sealing resin composition having a height of 3 mm. Thus, 10 test pieces were prepared in which a cured product of the sealing resin composition was disposed on the copper plate on which the OSP film was formed.
For 10 test pieces using the sealing resin compositions used in the electronic devices of each example and comparative example 1, the shear adhesion force against the adhesion of the sealing resin composition to the copper plate was evaluated using an automatic chip shear force measuring apparatus (produced by Nordson advanced technology k.k., type DAGE 4000) at a temperature of 260 ℃. The average value of the shear adhesion of 10 test pieces is shown in table 1 below as Cu adhesion. Wherein, the unit is 'N/mm'.
As shown in table 1, it was confirmed that the electronic devices obtained by the manufacturing methods of the electronic devices of the respective examples had higher Cu adhesion than the electronic device obtained by the manufacturing method of the electronic device of comparative example 1.
Priority is claimed in the present application based on japanese application No. 2017-247284, filed 12/25/2017, the disclosure of which is incorporated herein in its entirety.
Claims (13)
1. A method of manufacturing an electronic device, comprising:
preparing a component having a copper circuit on a surface thereof;
a coating step of forming an OSP film on the copper circuit by coating a solder resist on the surface; and
a sealing step of sealing the copper circuit with a sealing resin composition,
the sealing process is performed without performing a cleaning process for removing the OSP film formed in the coating process,
the sealing resin composition comprises an epoxy resin, a curing agent and an adhesion promoter,
the solder resist contains an imidazole compound.
2. The method of manufacturing an electronic device according to claim 1,
the adhesion promoter contains 1 or more selected from thiol group, carboxyl group and amino group.
3. The method of manufacturing an electronic device according to claim 2,
the adhesion promoter contains the amino group,
the amino group comprises a heterocyclic amino group.
4. The method for manufacturing an electronic device according to any one of claims 1 to 3,
the content of the adhesion promoter in the sealing resin composition is 0.010 parts by mass or more and 1.0 part by mass or less with respect to the total solid content of the sealing resin composition.
5. The method for manufacturing an electronic device according to any one of claims 1 to 4,
the content of the adhesion promoter in the sealing resin composition is 0.10 to 10 parts by mass relative to the total amount of the epoxy resin and the curing agent.
6. The method for manufacturing an electronic device according to any one of claims 1 to 5,
the sealing resin composition further comprises an inorganic filler,
the inorganic filler material comprises silica.
7. The method of manufacturing an electronic device according to claim 6,
a cumulative 50% particle diameter D of the inorganic filler material on a volume basis50Is 0.1 to 50 μm.
8. The method for manufacturing an electronic device according to any one of claims 1 to 7,
the curing agent contains a phenolic resin curing agent.
9. The method for manufacturing an electronic device according to any one of claims 1 to 8,
in the coating step, the thickness of the OSP film is 0.05 to 1.0 [ mu ] m.
10. The method for manufacturing an electronic device according to any one of claims 1 to 9,
the sealing process is performed by molding.
11. The method of manufacturing an electronic device according to claim 10,
in the sealing step, the molding temperature is 100 ℃ to 240 ℃.
12. The method of manufacturing an electronic device according to claim 10 or 11,
in the sealing process, the molding method is 1 selected from a transfer molding method, a compression molding method, and an injection molding method.
13. The method for manufacturing an electronic device according to any one of claims 1 to 12,
the electronic Device is a printed wiring board or a Molded circuit Device (MID).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017247284 | 2017-12-25 | ||
| JP2017-247284 | 2017-12-25 | ||
| PCT/JP2018/046784 WO2019131379A1 (en) | 2017-12-25 | 2018-12-19 | Method for producing electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111527593A true CN111527593A (en) | 2020-08-11 |
| CN111527593B CN111527593B (en) | 2021-05-04 |
Family
ID=67063605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880083685.7A Active CN111527593B (en) | 2017-12-25 | 2018-12-19 | Method for manufacturing electronic device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6540933B1 (en) |
| KR (1) | KR102202216B1 (en) |
| CN (1) | CN111527593B (en) |
| TW (1) | TWI778200B (en) |
| WO (1) | WO2019131379A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086525A (en) * | 2020-09-07 | 2020-12-15 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2022118749A1 (en) * | 2020-12-03 | 2022-06-09 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001019745A (en) * | 1999-07-07 | 2001-01-23 | Sumitomo Bakelite Co Ltd | Semiconductor device and its production |
| JP2003246828A (en) * | 2002-02-27 | 2003-09-05 | Fujitsu Ltd | Thermosetting polyurethane composition, mounted board, its manufacturing process and electronic circuit board |
| JP2008226926A (en) * | 2007-03-08 | 2008-09-25 | Sumitomo Bakelite Co Ltd | Liquid sealant resin composition, semiconductor device and its manufacturing method |
| US20110083885A1 (en) * | 2009-10-08 | 2011-04-14 | Tae Hyun Kim | Metal wiring structure comprising electroless nickel plating layer and method of fabricating the same |
| CN102598252A (en) * | 2010-06-15 | 2012-07-18 | 松下电器产业株式会社 | Package structure, method for manufacturing same, and method for repairing package structure |
| CN102766874A (en) * | 2012-08-20 | 2012-11-07 | 合肥奥福表面处理科技有限公司 | Organic solderability preservative (OSP) protective agent for copper surfaces |
| CN103188885A (en) * | 2011-12-28 | 2013-07-03 | 三星电机株式会社 | Method for manufacturing of circuit board |
| CN103884726A (en) * | 2014-03-04 | 2014-06-25 | 工业和信息化部电子第五研究所 | Mmeasuring method of thickness of OSP (Organic Solderability Preservatives) film |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5577640B2 (en) * | 2009-07-24 | 2014-08-27 | 日立化成株式会社 | Manufacturing method of semiconductor device |
| JP6329776B2 (en) | 2014-01-28 | 2018-05-23 | 株式会社アドマテックス | Sealing material for mold underfill |
| US10388583B2 (en) * | 2014-10-10 | 2019-08-20 | Namics Corporation | Thermosetting resin composition and method of producing same |
| JP6713289B2 (en) * | 2016-01-28 | 2020-06-24 | 新光電気工業株式会社 | Semiconductor device and method of manufacturing semiconductor device |
-
2018
- 2018-12-19 KR KR1020207021348A patent/KR102202216B1/en active IP Right Grant
- 2018-12-19 WO PCT/JP2018/046784 patent/WO2019131379A1/en active Application Filing
- 2018-12-19 CN CN201880083685.7A patent/CN111527593B/en active Active
- 2018-12-19 JP JP2019517471A patent/JP6540933B1/en active Active
- 2018-12-24 TW TW107146748A patent/TWI778200B/en active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001019745A (en) * | 1999-07-07 | 2001-01-23 | Sumitomo Bakelite Co Ltd | Semiconductor device and its production |
| JP2003246828A (en) * | 2002-02-27 | 2003-09-05 | Fujitsu Ltd | Thermosetting polyurethane composition, mounted board, its manufacturing process and electronic circuit board |
| JP2008226926A (en) * | 2007-03-08 | 2008-09-25 | Sumitomo Bakelite Co Ltd | Liquid sealant resin composition, semiconductor device and its manufacturing method |
| US20110083885A1 (en) * | 2009-10-08 | 2011-04-14 | Tae Hyun Kim | Metal wiring structure comprising electroless nickel plating layer and method of fabricating the same |
| CN102598252A (en) * | 2010-06-15 | 2012-07-18 | 松下电器产业株式会社 | Package structure, method for manufacturing same, and method for repairing package structure |
| CN103188885A (en) * | 2011-12-28 | 2013-07-03 | 三星电机株式会社 | Method for manufacturing of circuit board |
| CN102766874A (en) * | 2012-08-20 | 2012-11-07 | 合肥奥福表面处理科技有限公司 | Organic solderability preservative (OSP) protective agent for copper surfaces |
| CN103884726A (en) * | 2014-03-04 | 2014-06-25 | 工业和信息化部电子第五研究所 | Mmeasuring method of thickness of OSP (Organic Solderability Preservatives) film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086525A (en) * | 2020-09-07 | 2020-12-15 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
| CN112086525B (en) * | 2020-09-07 | 2022-11-04 | 隆基绿能科技股份有限公司 | Solar cell and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201934649A (en) | 2019-09-01 |
| JP6540933B1 (en) | 2019-07-10 |
| CN111527593B (en) | 2021-05-04 |
| KR102202216B1 (en) | 2021-01-13 |
| KR20200093681A (en) | 2020-08-05 |
| TWI778200B (en) | 2022-09-21 |
| JPWO2019131379A1 (en) | 2019-12-26 |
| WO2019131379A1 (en) | 2019-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5088146B2 (en) | Liquid epoxy resin composition for sealant | |
| TW201819497A (en) | Thermosetting resin composition for laser direct structuring, resin molding component and molded interconnect device | |
| TWI403529B (en) | Epoxy resin composition for encapsulating semiconductor and semiconductor device | |
| JP6507506B2 (en) | Resin composition for sealing and semiconductor device | |
| JP2017110051A (en) | Resin composition for encapsulation, semiconductor device and on-vehicle electronic control unit | |
| CN111527593B (en) | Method for manufacturing electronic device | |
| TWI797404B (en) | Thermosetting resin composition for lds and method of manufacturing semiconductor device | |
| JP2008174711A (en) | Epoxy resin composition and semiconductor device | |
| CN111989769B (en) | Method for manufacturing electronic device | |
| WO2015146764A1 (en) | Resin composition for sealing and semiconductor device | |
| JP6281178B2 (en) | Electronic device, automobile and method of manufacturing electronic device | |
| JP2014133830A (en) | Epoxy resin composition for semiconductor encapsulation and single-sided encapsulation type semiconductor device | |
| CN113614141B (en) | Sealing resin composition and semiconductor device | |
| JP2019006905A (en) | Resin composition for sealing material and electronic apparatus using the same | |
| JP7139598B2 (en) | Method for producing encapsulating resin composition and method for producing electronic device | |
| JP6322966B2 (en) | Resin composition for sealing and electronic component device | |
| TWI793258B (en) | Resin composition for encapsulating semiconductor, semiconductor device, and method for producing resin composition for encapsulating semiconductor | |
| JP6489263B2 (en) | Resin composition for sealing and electronic component device | |
| JP2005281584A (en) | Epoxy resin composition and semiconductor device | |
| WO2016174757A1 (en) | Encapsulating resin composition and electronic component device | |
| WO2021187240A1 (en) | Resin composition for sealing, and semiconductor device | |
| JP2017101254A (en) | Encapsulation epoxy resin molding material and electronic part device | |
| JP2007051198A (en) | Epoxy resin composition for sealing semiconductor | |
| JP2011058003A (en) | Epoxy resin composition for sealing semiconductor, resin-sealed semiconductor device and method for mounting semiconductor device | |
| JP2021102728A (en) | Thermosetting resin composition for LDS |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |