CN111524995A - β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器及其制备方法 - Google Patents

β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器及其制备方法 Download PDF

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CN111524995A
CN111524995A CN202010315454.3A CN202010315454A CN111524995A CN 111524995 A CN111524995 A CN 111524995A CN 202010315454 A CN202010315454 A CN 202010315454A CN 111524995 A CN111524995 A CN 111524995A
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杨莲红
张保花
郭福强
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CHANGJI UNIVERSITY
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Abstract

本发明公开了一种β‑Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，采用β‑Ga2O3/GaN异质结结构。并公开了其制备方法。与传统单色探测器相比，本发明实现了通过施加的不同偏压，在β‑Ga2O3/GaN异质结处形成不同深度的耗尽层，实现了一个器件的两种工作模式，即在较小偏压下，耗尽层为Ga2O3层，器件只对275nm以下日盲波段的光有响应；在较大偏压下，耗尽层延伸到GaN层，光响应延伸到365nm的可见盲波段。

Description

β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器及其制备 方法
技术领域
本发明涉及一种β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器及其制备方法，属于光电探测技术领域。
背景技术
近年来，无论是在民用还是军事领域，如导弹预警、空间通信安全、发动机引擎控制等方向，日盲/可见盲光电探测器的潜在的应用价值引发社会广泛的关注研究。但能同时在日盲/可见盲实现双色紫外探测的探测器件仍然是一个尚待解决的创新性课题。
III-氮化物光子晶体滤波器经常被广泛应用于深紫外垂直腔面发射激光器、共振腔发光二极管以及尤其是日盲光电探测器中。目前为止，据文献报道Ga2O3与GaN可分别实现275nm与365nm以下的光电流响应，β-Ga2O3是一种具有深紫外特性的半导体材料，500nm的β-Ga2O3薄膜在紫外光区域能达到80％以上的透过率，能够弥补传统TCO材料在深紫外区域透过性低的特点，能够实现较宽的带隙且发出较短短波长的光，可实现日盲紫外的光电流探测，而GaN则可通过较窄的带隙与较大的光谱宽度，实现可见盲区的光电流探测。
发明内容
本发明的目的在于提供一种β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，可通过施加不同大小的电压，实现日盲区与可见盲区的双色探测。
本发明采用的技术方案为：一种β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其特征在于：采用β-Ga2O3/GaN异质结结构。
优选的，其结构自上而下依次包括：一衬底层，一n-GaN薄膜层、β-Ga2O3层，以及设置在β-Ga2O3层上的p型电极，设置在n-GaN薄膜层上的n型电极。衬底层可采用蓝宝石衬底、Si衬底或SiC衬底。
优选的，还包括一i-GaN薄膜层，设置于n-GaN薄膜层与β-Ga2O3层之间。
优选的，所述p型电极为透明电极，所述透明电极为InGaZnO电极、Ni/Au电极或Au电极，通常而言，电极厚度在10nm以下，可形成透明电极。在β-Ga2O3薄膜上淀积透明电极，形成肖特基接触，可有提高电极的光透过率，降低对器件光损失的影响。
优选的，所述n-GaN薄膜层的厚度为1～10μm，i-GaN薄膜层的厚度为200～2000nm，β-Ga2O3层的厚度为200～1000nm。
本发明还公开了上述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器的制备方法，其步骤包括：
(1)清洗衬底；
(2)MOCVD法在衬底上生长一层n-GaN薄膜层；
(3)MOCVD法在n-GaN薄膜层上生长一层i-GaN薄膜层；
(4)降温，MOCVD法在i-GaN薄膜层上生长一层InN薄膜层作为界面牺牲层；
(5)升温使InN蒸发，LPCVD法原位生长一层β-Ga2O3薄膜层；
(6)制作p型电极和n型电极。
生长Ga2O3时，需将样品从GaN生长炉(MOCVD)中取出，放入新的生长设备(LPCVD)，该过程中会接触空气，带来污染。在i-GaN薄膜层表面生长一层InN层，相当于在GaN表面覆上一层保护膜，防止表面受到污染，等放入新腔室后，升温蒸发InN即可。
优选的，步骤(2)和步骤(3)中生长温度为980℃。
优选的，步骤(4)中InN薄膜层的生长温度为600℃。
优选的，步骤(5)中InN薄膜层的蒸发温度为700℃。
优选的，步骤(5)中β-Ga2O3薄膜层的生长温度为700～1000℃。
本发明的有益效果如下：
(1)与传统单色探测器相比，实现了通过施加的不同偏压，在β-Ga2O3/GaN异质结处形成不同深度的耗尽层，实现了一个器件的两种工作模式，即在较小偏压(0～5V)下，耗尽层为Ga2O3层，器件只对275nm以下日盲波段的光有响应；在较大偏压(20～100V)下，耗尽层延伸到GaN层，光响应延伸到365nm的可见盲波段。
(2)在n型层与β-Ga2O3层之间设有i型层，在相同偏压下，可提高对长波长光的吸收，提高器件的响应度和量子效率。
(3)肖特基采用了透明电极，有利于减少电极对光的吸收，提高探测器的光电流响应度。
附图说明
图1.一种β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器的结构示意图。
图2.双色紫外探测器在0V偏压下的光谱响应图。
图3.双色紫外探测器在20V偏压下的光谱响应图。
图4.双色紫外探测器在0V偏压下的电场分布图。
图5.双色紫外探测器在20V偏压下的电场分布图。
需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
下面结合附图对本发明的具体实施方式做进一步的说明。
具体实施方式
以下是结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
如图1所示，本β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其结构自上而下依次包括：一衬底层1，一n-GaN薄膜层2、一i-GaN薄膜层3、β-Ga2O3层4，以及设置在β-Ga2O3层上的p型电极5，设置在n-GaN薄膜层上的n型电极6。
其中衬底为蓝宝石衬底，所述n-GaN薄膜层的厚度为1μm，i-GaN薄膜层的厚度为500nm，β-Ga2O3层的厚度为300nm。p型电极为InGaZnO透明电极，n型电极为Ti/Al/Ni/Au多层电极。
图2与图3为实施例1的双色紫外探测器在0V与20V不同电压下的光电流响应谱。即在较小偏压下，耗尽层为Ga2O3层，器件只对275nm以下日盲波段的光有响应；在较大偏压下，耗尽层延伸到GaN层，光响应延伸到365nm的可见盲波段。
图4与图5为实施例1的双色紫外探测器在0V与20V不同偏压下的电场分布图，耗尽层的深度随偏压的增大，由Ga2O3层逐渐延伸到GaN层。
该器件在0～5V的偏压下，耗尽层为Ga2O3层，器件只对275nm以下日盲波段的光有响应；在20～100V的偏压下，耗尽层延伸到GaN层，光响应延伸到365nm的可见盲波段。
实施例2
本β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其结构自上而下依次包括：一衬底层，一n-GaN薄膜层、一i-GaN薄膜层、β-Ga2O3层，以及设置在β-Ga2O3层上的p型电极，设置在n-GaN薄膜层上的n型电极。
其中衬底为Si衬底，所述n-GaN薄膜层的厚度为10μm，i-GaN薄膜层的厚度为2000nm，β-Ga2O3层的厚度为1000nm。p型电极为薄层Ni/Au透明电极，n型电极为Ti/Al/Ni/Au多层电极。
该器件在0～20V的偏压下，耗尽层为Ga2O3层，器件只对275nm以下日盲波段的光有响应；在40～100V的偏压下，耗尽层延伸到GaN层，光响应延伸到365nm的可见盲波段。
实施例3
本β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其结构自上而下依次包括：一衬底层，一n-GaN薄膜层、一i-GaN薄膜层、β-Ga2O3层，以及设置在β-Ga2O3层上的p型电极，设置在n-GaN薄膜层上的n型电极。
其中衬底为SiC衬底，所述n-GaN薄膜层的厚度为5μm，i-GaN薄膜层的厚度为200nm，β-Ga2O3层的厚度为200nm。p型电极为薄层Au透明电极，n型电极为Ti/Al/Ni/Au多层电极。
该器件在0～2V的偏压下，耗尽层为Ga2O3层，器件只对275nm以下日盲波段的光有响应；在10～100V的偏压下，耗尽层延伸到GaN层，光响应延伸到365nm的可见盲波段。
实施例4
本β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其结构自上而下依次包括：一衬底层，一n-GaN薄膜层、β-Ga2O3层，以及设置在β-Ga2O3层上的p型电极，设置在n-GaN薄膜层上的n型电极。
其中衬底为蓝宝石衬底，所述n-GaN薄膜层的厚度为1μm，β-Ga2O3层的厚度为300nm。p型电极为InGaZnO透明电极，n型电极为Ti/Al/Ni/Au多层电极。
该器件在0～5V的偏压下，耗尽层为Ga2O3层，器件只对275nm以下日盲波段的光有响应；在20～100V的偏压下，耗尽层延伸到GaN层，光响应延伸到365nm的可见盲波段。
实施例5
本β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器的制备方法，其步骤包括：
1、选择蓝宝石衬底在1050℃下进行表面高温处理。
2、在蓝宝石衬底上利用MOCVD在980℃下制备一层厚约1μm的n-GaN薄膜层和500nm的i-GaN薄膜层。
3、通过MOCVD降温至600℃，生长10nm的InN薄膜作为界面牺牲层，后利用LPCVD在700℃先将InN薄膜蒸发掉。
4、通过LPCVD在700-1000℃的范围内生长制备300nm的β-Ga2O3薄膜层。
5、通过刻蚀工艺，在n-GaN上制备Ti/Al/Ni/Au电极，接着在850℃退火30s形成欧姆接触，然后在β-Ga2O3薄膜上淀积InGaZnO透明电极，形成肖特基接触，制备成β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器。
通过施加的不同偏压，在β-Ga2O3/GaN异质结处形成不同深度的耗尽层，实现了一个器件的两种工作模式，即在较小偏压下，耗尽层为Ga2O3层，器件只对275nm以下日盲波段的光有响应；在较大偏压下，耗尽层延伸到GaN层，光响应延伸到365nm的可见盲波段。此外，肖特基采用了InGaZnO透明电极，有利于减少电极对光的吸收，提高探测器的光电流响应度。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (10)

1.一种β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其特征在于：采用β-Ga2O3/GaN异质结结构。
2.根据权利要求1所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其特征在于：其结构自上而下依次包括：一衬底层，一n-GaN薄膜层、一i-GaN薄膜层、β-Ga2O3层，以及设置在β-Ga2O3层上的p型电极，设置在n-GaN薄膜层上的n型电极。
3.根据权利要求2所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其特征在于：还包括一i-GaN薄膜层，设置于n-GaN薄膜层与β-Ga2O3层之间。
4.根据权利要求2所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其特征在于：所述p型电极为透明电极，所述透明电极为InGaZnO电极、Ni/Au电极或Au电极。
5.根据权利要求3或4所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器，其特征在于：所述n-GaN薄膜层的厚度为1～10μm，i-GaN薄膜层的厚度为200～2000nm，β-Ga2O3层的厚度为200～1000nm。
6.权利要求1-5中任一项所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器的制备方法，其步骤包括：
(1)清洗衬底；
(2)MOCVD法在衬底上生长一层n-GaN薄膜层；
(3)MOCVD法在n-GaN薄膜层上生长一层i-GaN薄膜层；
(4)降温，MOCVD法在i-GaN薄膜层上生长一层InN薄膜层；
(5)升温使InN蒸发，LPCVD法原位生长一层β-Ga2O3薄膜层；
(6)制作p型电极和n型电极。
7.根据权利要求6所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器的制备方法，其特征在于：步骤(2)和步骤(3)中生长温度为980℃。
8.根据权利要求7所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器的制备方法，其特征在于：步骤(4)中InN薄膜层的生长温度为600℃。
9.根据权利要求8所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器的制备方法，其特征在于：步骤(5)中InN薄膜层的蒸发温度为700℃。
10.根据权利要求9所述的β-Ga2O3/GaN异质结日盲/可见盲双色紫外探测器的制备方法，其特征在于：步骤(5)中β-Ga2O3薄膜层的生长温度为700～1000℃。
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