CN111508862B - Laser welding device and method for semiconductor device - Google Patents
Laser welding device and method for semiconductor device Download PDFInfo
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- CN111508862B CN111508862B CN201911074618.1A CN201911074618A CN111508862B CN 111508862 B CN111508862 B CN 111508862B CN 201911074618 A CN201911074618 A CN 201911074618A CN 111508862 B CN111508862 B CN 111508862B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/005—Soldering by means of radiant energy
- B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/02—Carriages for supporting the welding or cutting element
- B23K37/0211—Carriages for supporting the welding or cutting element travelling on a guide member, e.g. rail, track
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention relates to a laser welding device and method for semiconductor element, which is used to weld a joint product, the joint product is formed by jointing a frame and a substrate, the frame is provided with a sticking film and a plurality of semiconductor elements arranged on the sticking film, the laser welding device comprises: a welding device, including a base, the base is provided with a welding platform and a welding module, the welding platform is used to bear the bonding product, the welding module is provided with a scanning module and a laser welding head, the scanning module is used to scan the bonding product, the laser welding head emits laser beam to penetrate at least one of the film and the substrate. The invention can quickly attach a plurality of semiconductor elements to a plurality of conductive circuits of a substrate and perform laser welding on the plurality of semiconductor elements and the plurality of conductive circuits, thereby improving the processing speed of the semiconductor industry and reducing the cost.
Description
Technical Field
The invention relates to a laser welding device and method for semiconductor components.
Background
In a general semiconductor industry process, a die factory arranges dies on a glue film (Tape) through a die sorter, delivers the dies to a downstream die bonder, and the die bonder places and fixes wafers on a circuit substrate one by one in a die bonder mode (Pick and Place).
However, the conventional manufacturing process has the following disadvantages that the temperature rise curve of the 1.reflex process is slow, the curing reaction time of at least 2 reflow points on one wafer is different, which easily causes the die to tilt and form a defect, the 2.reflex process cannot repair or rework a single defective die, the reworking of the whole wafer further affects other wafers with normal reflow, 3, the die is smaller than 3 mils, the yield of the dispensing technology is difficult to break through, and 4, the operation time of 2 times of the Pick and Place process through a sorting machine and a die bonder is slow, the equipment investment cost is huge, and the disadvantages to be improved exist.
Therefore, there is a need to provide a novel and advanced laser welding apparatus and method for semiconductor device to solve the above problems.
Disclosure of Invention
The main objective of the present invention is to provide a laser welding device and method for semiconductor devices, which arranges the semiconductor devices on Tape according to the joint pitch of the circuit substrate, can directly bond Tape and the conductive substrate, and can perform the transmission scanning welding by laser heating, and the advantages are: 1. the method can reduce the abnormal problem which is difficult to overcome by the Reflow soldering of semiconductor elements such as LED, etc., and replace the existing die bonder and Reflow equipment, 2, the die bonder does not need to do the Pick and Place operation on the die again according to the position of the circuit board, and the Tape film of the die sorting section can be directly used for vacuum bonding mass transfer, so that tens of millions of dies are displayed on the display screen, the speed is much higher than that of the Pick and Place, and a lot of processing time can be saved, 3, the laser penetration type scanning welding technology has the undesirable problems that the die is clamped between the Tape and the circuit board, the vacuum bonding has the effect on the die and the circuit, the rising curve of the laser heating temperature is rapid, and the die is not warped in the processing.
In order to achieve the above object, the present invention provides a laser welding device for semiconductor devices, which is used for welding a bonded product, wherein the bonded product is formed by bonding a frame and a substrate, the frame is provided with a film and a plurality of semiconductor devices arranged on the film, and the laser welding device for semiconductor devices comprises a welding device. The welding equipment comprises a base, the base is provided with a welding platform and a welding module, the welding platform is used for bearing the bonding product, the welding module is provided with a scanning module and a laser welding head, the scanning module is used for scanning the bonding product, and the laser welding head emits laser beams to penetrate through at least one of the film and the substrate.
In order to achieve the above object, the present invention further provides a laser welding method for semiconductor device, which provides the laser welding apparatus for semiconductor device as described above, further comprising the following steps. Attaching: the first aligning platform is used for rotating and aligning the substrate to a first preset angle, the second aligning platform is used for rotating and aligning the frame to a second preset angle, and the first taking device is used for taking one of the substrate aligned to the first preset angle and the frame aligned to the second preset angle and bonding the substrate aligned to the first preset angle and the frame aligned to the second preset angle to form a bonded finished product; welding: and placing the bonded product on the welding carrying platform, scanning and positioning the bonded product by the scanning module, and relatively moving the relative positions of the laser welding head and the welding carrying platform so as to position the laser welding head, correspond to the plurality of semiconductor elements and emit laser beams to penetrate through at least one of the film and the substrate to heat the plurality of welding materials for welding.
Drawings
Fig. 1 is a perspective view of a bonding apparatus according to a preferred embodiment of the present invention.
FIG. 2 is a top view of a bonding apparatus according to a preferred embodiment of the present invention.
Fig. 3 and 4 are perspective views of a bonded product according to a preferred embodiment of the invention.
Fig. 5 and 6 are schematic side views of a bonded product according to a preferred embodiment of the invention.
FIG. 7 is a perspective view of a welding apparatus in accordance with a preferred embodiment of the present invention.
FIG. 8 is a side view of a soldering apparatus in accordance with a preferred embodiment of the present invention.
FIG. 9 is a schematic view of a welding process according to a preferred embodiment of the present invention.
FIG. 10 is a schematic view of another welding process according to a preferred embodiment of the present invention.
Fig. 11 is another perspective view of the attaching device according to a preferred embodiment of the present invention.
Detailed Description
The following description is given by way of example only, and is not intended to limit the scope of the invention.
Referring to fig. 1 to 11, a laser welding apparatus for semiconductor devices according to a preferred embodiment of the present invention is provided for welding a bonded product 94, the bonded product 94 is formed by bonding a frame 92 and a substrate 91, the frame 92 is provided with a film 921 and a plurality of semiconductor devices 922 arranged on the film 921, and the laser welding apparatus for semiconductor devices comprises a welding device 5.
The welding apparatus 5 includes a base 6, the base 6 has a welding stage 7 and a welding module 8, the welding stage 7 is used for carrying the bonding product 94, the welding module 8 has a scanning module 81 and a laser welding head 82, the scanning module 81 is used for scanning the bonding product 94, and the laser welding head 82 emits a laser beam to penetrate at least one of the film 921 and the substrate 91.
The present invention further comprises a bonding apparatus 1, the bonding apparatus 1 comprises a base 2, a substrate detection mechanism 3, a frame detection mechanism 4 and a first fetching device 11, the base 2 defines an X-axis L1, a Y-axis L2 and a Z-axis L3 which are perpendicular to each other, the substrate detection mechanism 3 is disposed on the base 2 and comprises a first alignment platform 31 and a first detection module 32, the first alignment platform 31 can rotate along the Z-axis L3 and is used for placing the substrate 91, the substrate 91 is provided with a plurality of conductive traces 911, the first detection module 32 is used for detecting and scanning the substrate 91, the frame detection mechanism 4 is disposed on the base 2 and comprises a second alignment platform 41 and a second detection module 42, the second alignment platform 41 can rotate along the Z-axis L3 and is used for placing the frame 92, in the embodiment, the semiconductor device 922 is an LED die, the second detection module 42 is used for detecting and scanning the frame 92, the second aligning platform 41 is used for rotating and aligning the frame 92 to a second predetermined angle, the conductive circuit 911 or the plurality of semiconductor devices 922 is pre-provided with a plurality of solders 93, in this embodiment, the plurality of solders 93 are provided on the plurality of semiconductor devices 922, the first fetching device 11 is used for fetching one of the substrate 91 and the frame 92 with the first predetermined angle and attaching the substrate 91 and the frame 92 to the other to form the attached product 94 (in this embodiment, the first fetching device 11 fetches the frame 92 and attaches the substrate 91), it should be noted that, in this embodiment, the first fetching device 11 can selectively move along the X axis L1 and the Z axis L3, the first fetching device 11 is a suction cup, the first fetching device 11 attaches the substrate 91 and the frame 92 along the Z axis L3, so that each of the semiconductor devices 922 of the frame 92 is accurately attached to the conductive circuit 911 of the substrate 91, each of the solders 93 contacts the semiconductor device 922 and the conductive line 911.
The present invention further provides a laser welding method for semiconductor device, which provides a laser welding apparatus for semiconductor device as described above, further comprising the following steps. Attaching: the first aligning platform 31 is used for rotating and aligning the substrate 91 to a first predetermined angle, the second aligning platform 41 is used for rotating and aligning the frame 92 to a second predetermined angle, the first fetching device 11 is used for fetching one of the substrate 91 aligned to the first predetermined angle and the frame 4 aligned to the second predetermined angle and bonding the one to the other to form the bonded product 94 (in the embodiment, the first fetching device 11 fetches the frame 92 and bonds to the substrate 91), it is worth mentioning that in the embodiment, the bonding apparatus 1 is further provided with a bonding monitoring module 16 (as shown in fig. 11) for monitoring the bonded substrate 91 and frame 4 to confirm that the plurality of semiconductor devices 922 are smoothly bonded to the plurality of conductive traces 911. Welding: the bonded product 94 is placed on the soldering stage 7, the scanning module 81 scans and positions the bonded product 94, and relatively moves the relative positions of the laser soldering head 82 and the soldering stage 7, so that the laser soldering head 82 is positioned and corresponds to the plurality of semiconductor devices 922, and emits a laser beam to penetrate at least one of the film 921 and the substrate 91, so as to heat the plurality of solders 93 for soldering. As shown in fig. 9, when the substrate 91 is made of a transparent material (such as a transparent ceramic plate, a transparent glass plate, a transparent PCB plate, or a transparent sapphire plate), the bonding product 94 can be operated with the substrate 91 facing the laser welding head 82, and a laser beam can penetrate the substrate 91 for welding; when the substrate 91 is made of opaque material (such as opaque ceramic plate, silicon plate or PCB), as shown in FIG. 10, the bonded product 94 can only be operated by the film 921 toward the laser welding head 82, the laser beam can penetrate the film 921 for welding, and can be operated according to the actual material of the substrate 91, the material of the film 921 can be PE blue film, U-shaped film, or PCBA V-film or other light-permeable and flexible adhesive film, a plurality of semiconductor devices 922 without glue and adhered to the adhesive film 911, thereby having a simpler process, a plurality of solders 93 can be printed, dispensed, electroplated or etched on the plurality of semiconductor devices to improve efficiency, preferably the laser beam has a wavelength of 0.2um to 11um, and has an optimal effect of penetrating the adhesive film 921 and the substrate 91 to reliably heat the plurality of solders 93, wherein the power density range is 1KW/cm 2 To 10MW/cm 2 The heating time is between 0.01 and 2000 milliseconds, and the optimized power density in this embodiment is 100KW/cm 2 The heating time is 0.05 ms, the laser heating process can modulate the laser to be pulse type, the frequency range is 1 to 100KHz, the optimized condition is 4KHz, the duty ratio is 15%, in this embodiment, the welding module 8 uses the laser control card to send the electronic signal to the laser source, so as to modulate the laser frequency, duty ratio and energy range.
Specifically, the base 6 is further provided with a first rail 61 extending along the X-axis L1 and a second rail 62 extending along the Y-axis L2, the second rail 62 is slidably disposed on the first rail 61, and the welding stage 7 is slidably disposed on the second rail 62, so that the welding stage 7 can move along the X-axis L1 and the Y-axis L2 relative to the welding module 8, and the scanning module 81 of the welding module 8 can scan and align the bonded product 94.
Further, the laser welding head 8 can set the position and distribution irradiated by the laser beam according to the distribution position and information of the plurality of semiconductor devices 922 and the plurality of conductive circuits 911 scanned by the scanning module 81, or can perform welding according to the position information to be welded preset by the semiconductor manufacturer, and can perform welding operation according to the actual use requirement, but not limited thereto. The laser welding head 92 has a focusing and collimating function, so that the laser beam can be focused on the solder 93, the temperature rising efficiency of the semiconductor device 922 due to heat conduction is slow, so as to prevent the semiconductor device 922 from being damaged due to overheating, in detail, the laser scanning coordinate obtaining method performs alignment and alignment according to the circuit characteristic points of the plurality of conductive circuits 911 to obtain the reference initial coordinate, and the following 3 square coordinate obtaining methods are used for processing: 1. the first inspection module 32 and the second inspection module 42 can scan and position the substrate 91 and the frame 92 to obtain the coordinates of the solders 93 for the scanning module 81 to move and process according to the coordinates, 2. The coordinates of the circuit diagram can be compiled for the scanning module 81 to move and process according to the coordinates, 3. The number of arrays and the spacing distance can be input for the scanning module 81 to move and process according to the coordinates.
In addition, the welding module is further provided with a focusing unit 83, the focusing unit 83 can use the plane of the welding carrier 7 as the origin of the minimum focusing base of the laser, input the thickness of the substrate 91 and the diameter of the plurality of solders 93, automatically adjust the focusing position of the laser based on the optical focusing design, and adjust the defocusing by covering the whole area of the connection points of the plurality of conductive circuits 911 as the concept of the laser focusing section.
In the embodiment, the base 6 is further provided with a lifting device 63 capable of moving along the Z-axis L3 relative to the welding carrier 7, and the welding module 8 is disposed on the lifting device 63 for lifting.
In this embodiment, the base is further provided with a substrate taking arm 12 and a first rough alignment platform 14, the substrate taking arm 12 firstly places the substrate 91 on the first rough alignment platform 14 for rough alignment, and then places the substrate 91 on the first alignment platform 31, so as to save the operation time of the first alignment platform 31.
The base 2 is further provided with a frame taking arm 13 and a relay platform 15, the relay platform 15 and the frame taking arm 13 can move along the Y axis L2 direction, the frame taking arm 13 is used for taking a frame 92 from a frame box seat 96 and placing the frame 92 on the relay platform 15, the first taking device 11 is used for taking the frame 92 from the relay platform 15 and placing the frame 92 on the second aligning platform 41, the first taking device 11 is used for taking the bonded finished product 94 from the second aligning platform 41 and placing the bonded finished product 94 back to the relay platform 15, and the frame taking arm 13 is used for taking the bonded finished product 94 from the relay platform 15 and placing the bonded finished product 94 on the frame box seat 96 for the laser welding process. In the embodiment where the frame taking arm 13 is a clamp 131, the frame taking arm 13 can be selectively moved along the Y-axis L2.
In addition, in the embodiment, the first detecting module 32 and the second detecting module 42 are photo-coupled device (CCD) sensors, the first detecting module 32 is used for scanning and aligning the conductive traces 911 of the substrate 91, and the second detecting module 42 is used for scanning and aligning the arrangement of the plurality of semiconductor devices 922, so as to achieve the effect of accurate alignment.
In summary, the laser welding apparatus and method for semiconductor devices of the present invention can rapidly attach the plurality of semiconductor devices arranged on the frame to the plurality of conductive traces of the substrate for laser welding to attach the plurality of semiconductor devices to the plurality of conductive traces, and attach a huge number (thousands to tens of millions) of semiconductor devices with small size of 1 to 80 mils and the like at one time by using the film, and attach the huge number of semiconductor devices by laser welding, thereby increasing the processing speed of the semiconductor industry and reducing the cost.
The above description is of the preferred embodiment of the present invention and the technical principle applied thereto, and it will be apparent to those skilled in the art that any equivalent changes, simple substitutions and other obvious changes based on the technical solution of the present invention can be made without departing from the spirit and scope of the present invention.
Claims (8)
1. A laser welding device for semiconductor devices, which is used to weld a bonded product, wherein the bonded product is formed by bonding a frame and a substrate, the frame is provided with a film and a plurality of semiconductor devices arranged on the film, comprising:
a welding device, including a base body, the base body is provided with a welding carrying platform and a welding module, the welding carrying platform is used for carrying the bonding product, the welding module is provided with a scanning module and a laser welding head, the scanning module is used for scanning the bonding product, and the laser welding head emits laser beams to penetrate at least one of the film and the substrate;
the base defines an X axis, a Y axis and a Z axis which are mutually perpendicular, the base detection mechanism is arranged on the base and comprises a first contraposition platform and a first detection module, the first contraposition platform can rotate along the Z axis and is used for placing the base, the base is provided with a plurality of conductive circuits, the first detection module is used for detecting and scanning the base, the frame detection mechanism is arranged on the base and comprises a second contraposition platform and a second detection module, the second contraposition platform can rotate along the Z axis and is used for placing the frame, the second detection module is used for detecting and scanning the frame, the conductive circuits or the plurality of semiconductor elements are provided with a plurality of welding fluxes in advance, the first taking device is used for taking one of the base and the frame and attaching the other one of the base and the frame to enable each semiconductor element of the frame to be attached to the conductive circuits of the base to form a finished product, and the conductive circuits and the semiconductor elements are respectively contacted with the solder;
the base is additionally provided with a frame taking arm and a relay platform, the relay platform and the frame taking arm can move along the Y-axis direction, the frame taking arm is used for taking a frame from a frame box seat and placing the frame on the relay platform, the first taking device is used for taking the frame from the relay platform and placing the frame on the second aligning platform, the first taking device is used for taking the laminated finished product from the second aligning platform and placing the laminated finished product back to the relay platform, and the frame taking arm can take the laminated finished product from the relay platform and place the laminated finished product on the frame box seat.
2. The apparatus of claim 1, wherein the base further comprises a first rail extending along the X-axis and a second rail extending along the Y-axis, the second rail is slidably disposed on the first rail, the welding stage is slidably disposed on the second rail such that the welding stage can move along the X-axis and the Y-axis relative to the welding module, the base further comprises a lifting device capable of moving along the Z-axis relative to the welding stage, and the welding module is disposed on the lifting device.
3. The laser welding apparatus for semiconductor devices as claimed in claim 1, wherein the laser welding head sets the position and distribution of the laser beam according to the distribution positions and information of the plurality of semiconductor devices and the plurality of conductive traces scanned by the scanning module.
4. The laser welding apparatus of claim 1, wherein the frame-taking arm is a jig, and the frame-taking arm is selectively movable along the Y-axis.
5. The laser welding apparatus for semiconductor devices as claimed in claim 1, wherein the first pick-up device is capable of selectively moving along an X-axis and a Z-axis, the first pick-up device is a suction cup, and the first pick-up device attaches the substrate to the frame along the Z-axis.
6. The laser welding apparatus for semiconductor devices as claimed in claim 1, wherein the first inspection module is an OPC sensor, the first inspection module is for scanning conductive traces aligned to the substrate, the second inspection module is an OPC sensor, and the second inspection module is for scanning alignment of a plurality of semiconductor devices.
7. A laser welding method for semiconductor device, which provides a laser welding apparatus for semiconductor device as claimed in any one of claims 1 and 3 to 6, further comprising the steps of:
bonding: the first aligning platform is used for rotating and aligning the substrate to a first preset angle, the second aligning platform is used for rotating and aligning the frame to a second preset angle, and the first taking device is used for taking one of the substrate aligned to the first preset angle and the frame aligned to the second preset angle and bonding the substrate aligned to the first preset angle and the frame aligned to the second preset angle to form a bonded finished product;
welding: and placing the bonded product on the welding carrying platform, scanning and positioning the bonded product by the scanning module, and relatively moving the relative positions of the laser welding head and the welding carrying platform so as to position the laser welding head, correspond to the plurality of semiconductor elements, and emit laser beams to penetrate through at least one of the film and the substrate so as to heat the plurality of welding fluxes for welding.
8. The method of claim 7, wherein the soldering module further comprises a focusing unit, the focusing unit can use the plane of the soldering stage as the origin of the minimum focusing base of the laser, input the thickness of the substrate and the diameter of the solder, automatically adjust the focusing position of the laser based on the optical focusing design, and the principle is the laser focusing cross section, covering the whole area of the contact of the conductive circuit, and adjusting the defocusing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108103763 | 2019-01-31 | ||
| TW108103763A TWI734956B (en) | 2019-01-31 | 2019-01-31 | Laser welding device for semiconductor element and method for using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111508862A CN111508862A (en) | 2020-08-07 |
| CN111508862B true CN111508862B (en) | 2023-03-31 |
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| CN201911074618.1A Active CN111508862B (en) | 2019-01-31 | 2019-11-06 | Laser welding device and method for semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP7062703B2 (en) |
| KR (1) | KR102326855B1 (en) |
| CN (1) | CN111508862B (en) |
| TW (1) | TWI734956B (en) |
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| CN217799884U (en) * | 2022-06-28 | 2022-11-15 | 广东利元亨智能装备股份有限公司 | Bus bar welding device |
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| DE102010010415A1 (en) * | 2010-03-05 | 2011-09-08 | Bayerische Motoren Werke Aktiengesellschaft | Method for producing a corrosion-resistant laser welding connection between two components and arrangement of two components welded together |
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| KR20110076876A (en) * | 2008-10-31 | 2011-07-06 | 도레이 카부시키가이샤 | Method and apparatus for bonding electronic component and flexible film substrate |
| KR20110026671A (en) * | 2009-09-08 | 2011-03-16 | 삼성테크윈 주식회사 | Solder reflow apparatus |
| TWM557159U (en) * | 2017-05-24 | 2018-03-21 | Fittech Co Ltd | Laser surface treatment device |
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| JP2009094094A (en) * | 2007-10-03 | 2009-04-30 | Shinko Electric Ind Co Ltd | Flip-chip mounting apparatus |
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| CN111508862A (en) | 2020-08-07 |
| KR102326855B1 (en) | 2021-11-16 |
| JP2020127001A (en) | 2020-08-20 |
| TWI734956B (en) | 2021-08-01 |
| KR20200096117A (en) | 2020-08-11 |
| TW202030041A (en) | 2020-08-16 |
| JP7062703B2 (en) | 2022-05-06 |
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