CN111499375A - 一种高品质因数微波介质陶瓷材料及其制备方法 - Google Patents

一种高品质因数微波介质陶瓷材料及其制备方法 Download PDF

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CN111499375A
CN111499375A CN202010174257.4A CN202010174257A CN111499375A CN 111499375 A CN111499375 A CN 111499375A CN 202010174257 A CN202010174257 A CN 202010174257A CN 111499375 A CN111499375 A CN 111499375A
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李凯
李江峰
王汝青
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Suzhou Weijie Communication Technology Co ltd
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Abstract

本发明涉及微波介质材料领域,尤其涉及一种高品质因数微波介质陶瓷材料及其制备方法。该微波介质陶瓷材料包括按以下配方表达式的原料:(1‑x)(Mg1‑y,Zn)TiO3+xCaTiO3+awt%Mg2SiO4+bwt%MO。本发明制备出的微波介质陶瓷材料具有超高的品质因数,其εr=18~22,Qf=90000~100000GHz,τf=±8ppm/℃。本发明的微波介质陶瓷材料制备工艺简单、成本低、重现性好、易于工业化生产且性能优异,可广泛应用于制作高稳定性介质滤波器、双工器和合路器等微波频率器件。

Description

一种高品质因数微波介质陶瓷材料及其制备方法
技术领域
本发明涉及微波介质材料领域,尤其涉及一种高品质因数微波介质陶 瓷材料及其制备方法。
背景技术
5G,即第五代移动通信技术,是新一代信息技术的发展方向和数字经 济的重要基础。2019年6月6日,工信部向中国电信、中国移动、中国联 通和中国广电发放了5G商用牌照,我国正式进入5G商用元年。5G技术变 革带来射频前端市场规模的快速发展,使得介质滤波器、阵列天线等射频 器件的用量大幅增加。与4G网络相比,5G具有低时延、高可靠性、超低 功耗、网络容量大等优点,并且峰值速率提升20倍。设备小型化、低功耗、 高可靠性对介质滤波器的核心材料提出了更严格的要求,因此,具备稳定 可靠的介电常数εr、低损耗高品质因数Qf和接近零的谐振频率温度系数 τf的微波介质陶瓷成为当下研究的热点。
偏钛酸镁MgTiO3拥有铁钛矿结构,烧结温度在1400℃以上,拥有较好 的微波介电性能:εr≈17,Qf≈160000GHz,τf≈-50ppm/℃,钙钛矿结构 CaTiO3:εr≈160,Qf≈7000GHz,τf≈+850ppm/℃,其烧结温度1400℃左 右。根据两相陶瓷复合其频率温度系数符合对数法则,通常在MgTiO3中可 以添加具有正谐振频率温度系数的CaTiO3来补偿谐振频率温度系数,来保 证微波器件的温度稳定性,从而满足电子线路的实际需求。在专利 US5340784中公开了一种MgTiO3-CaTiO3微波介质陶瓷,烧结温度 1300~1425℃,εr≈18~22,Qf≈18000~28000GHz,其Qf较低,烧结温度 偏高。中国专利CN103641469发明了一种MgTiO3、CaTiO3低损耗陶瓷,烧 结温度1320~1380℃,εr≈9~20,Qf≈65000~85000GHz,τf≈±10ppm/℃,烧结温度偏高,烧结成本较高。
为了解决上述问题,当前迫切需要开发一种工艺简单、重现性好、材 料成本低、烧结温度低,同时满足低损耗更高品质因数特性的微波介质陶 瓷,以满足新一代移动通讯技术对微波介质陶瓷材料的需求。
发明内容
为解决上述技术问题,本发明提供了提供一种介电常数18~22,品质 因数为90000~100000GHz,谐振频率温度系数为±8ppm/℃的微波介质陶瓷 材料,以满足介质滤波器等微波元器件对高品质因数、高可靠性微波介质 陶瓷材料的需求。本发明的另外一个目的是提供上述微波介质陶瓷材料的 制备方法。
为达到上述目的,本发明的技术方案如下:一种高品质因数微波介质 陶瓷材料,包括按以下配方表达式的原料: (1-x)(Mg1-y,Zn)TiO3+xCaTiO3+awt%Mg2SiO4+bwt%MO;
其中,0.03≤x≤0.08,0.05≤y≤0.3,0≤a≤15,0≤b≤3;所述a 和b分别为所述Mg2SiO4和MO占(1-x)(Mg1-y,Zn)TiO3+xCaTiO3的质量百分数; MO为金属氧化物。
作为本发明的一种优选方案,所述MO为金属氧化物MnO2、Al2O3、CeO2和Nb2O5中的一种或多种。
作为本发明的一种优选方案,所述微波介质陶瓷材料的配方表达式中, 0.04≤x≤0.07,0.05≤y≤0.2,0≤a≤10,0≤b≤2。
一种高品质因数微波介质陶瓷材料的制备方法,包括以下步骤:
步骤1,合成Mg2SiO4;将分析纯MgCO3和SiO2按照Mg2SiO4的化学计量 比进行配料,形成第一配料,在卧式球磨机中磨合烘干后,煅烧合成Mg2SiO4
步骤2,预烧合成料;将分析纯MgCO3、CaCO3、TiO2和ZnO按化学式 (1-x)(Mg1-y,Zn)TiO3+xCaTiO3进行称量,并加入上述微波介质陶瓷材料的原 料比例的金属氧化物MO及步骤1中合成的Mg2SiO4,形成第二配料,在卧 式球磨机中磨合烘干后,在1000℃~1200℃大气气氛中煅烧4-6小时,得 到预烧合成料;
步骤3,烧结成品;将步骤2中的所述预烧合成料进行粉碎,加入胶水 造粒,然后压制成型,在1200~1300℃烧结,保温3~5小时,得到所述 微波介质陶瓷材料的成品。
作为上述制备方法的优选方案,步骤1中,配制成所述第一配料后, 并按所述第一配料:去离子水:氧化锆球重量比为1:(2~3):(3~4)的 比例,在卧式球磨机中混合20~24小时,混合后的浆料在120~150℃烘 干后,过40目筛,装入氧化铝坩埚,在1150℃~1250℃大气气氛中煅烧4~ 6小时,合成Mg2SiO4料。
作为上述制备方法的优选方案,步骤2中,配制成所述第二配料后, 并按所述第二配料:去离子水:氧化锆球重量比为1:(2~3):(3~4)的 比例,在卧式球磨机中混合20~24小时,混合后的浆料在120~150℃烘 干后,过40目筛,装入氧化铝坩埚,在1050℃~1150℃大气气氛中煅烧4~ 6小时,得到预烧合成料。
作为上述制备方法的优选方案,步骤3中,将所述预烧合成料:去离 子水:氧化锆球重量比为1:(0.8~1.2):(3~4)的比例,在立式搅拌机 中粉碎4~5小时,加入8~12%浓度为10%的聚乙烯醇胶水进行造粒,造粒 尺寸控制在80~150目,并在80~120MPa压力下压制成直径10mm,高度 5mm的圆块,在1220~1280℃烧结,保温3~5小时,得到所述微波介质陶 瓷材料的成品。
在上述的制备方法中,本发明通过ZnO部分取代MgO,在保证材料品 质因数不下降的情况下有效地降低了烧结温度;通过添加一定量的高品质 因数材料Mg2SiO4,可有效提高材料的品质因数;金属氧化物MO的适量引 入可以降低材料的气孔率,提高材料的致密性,提高材料品质因数,降低 烧结温度。最终得到介电常数为18~22,品质因数为90000~100000GHz, 谐振频率温度系数在±8ppm/℃的微波介质陶瓷材料。
通过上述技术方案,本发明技术方案的有益效果是:
(1)材料体系烧结温度较低,在1300℃以下,烧结成本低,具有节 能优势;
(2)材料不含重金属元素,符合环保要求,生产工艺简单、重现性好、 成本低;
(3)材料品质因数更高,谐振频率温度系数更小,满足介质滤波器等 微波元器件对高品质因数、高可靠性微波介质陶瓷材料的需求,可以用与 制备新一代移动通讯用介质波导滤波器,具有极大的工业应用价值。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对 实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地, 下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员 来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附 图。
图1为实施例中编号5的微波介质陶瓷材料的背散射扫描电镜照图。
图2为图1中1#晶粒的能谱分析结果图。
图3为图1中2#晶粒的能谱分析结果图。
图4为图1中3#晶粒的能谱分析结果图。
图5为图1中4#晶粒的能谱分析结果图。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、 完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是 全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出 创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例
制备高品质因数微波介质陶瓷材料,具体通过以下方法。
该微波介质陶瓷材料按以下配方表达式的原料: (1-x)(Mg1-y,Zn)TiO3+xCaTiO3+awt%Mg2SiO4+bwt%MO;
其中,0.03≤x≤0.08,0.05≤y≤0.3,0≤a≤15,0≤b≤3;所述a 和b分别为所述Mg2SiO4和MO占(1-x)(Mg1-y,Zn)TiO3+xCaTiO3的质量百分数; MO为金属氧化物,优选的为金属氧化物MnO2、Al2O3、CeO2和Nb2O5中的一种 或多种。
制备过程具体操作如下:
步骤1,合成Mg2SiO4;将分析纯MgCO3和SiO2按照Mg2SiO4的化学计量 比进行配料,形成第一配料,并按所述第一配料:去离子水:氧化锆球重 量比为1:(2~3):(3~4)的比例,在卧式球磨机中混合20~24小时, 混合后的浆料在120~150℃烘干后,过40目筛,装入氧化铝坩埚,在 1150℃~1250℃大气气氛中煅烧4~6小时,合成Mg2SiO4料。
步骤2,预烧合成料;将分析纯MgCO3、CaCO3、TiO2和ZnO按化学式 (1-x)(Mg1-y,Zn)TiO3+xCaTiO3进行称量,并按比例加入金属氧化物MO及步 骤1中合成的Mg2SiO4,形成第二配料,配制成所述第二配料后,并按所述 第二配料:去离子水:氧化锆球重量比为1:(2~3):(3~4)的比例,在 卧式球磨机中混合20~24小时,混合后的浆料在120~150℃烘干后,过 40目筛,装入氧化铝坩埚,在1000℃~1200℃大气气氛中煅烧4~6小时, 优选控制在1050℃~1150℃,得到预烧合成料。
步骤3,烧结成品;将所述预烧合成料:去离子水:氧化锆球重量比为 1:(0.8~1.2):(3~4)的比例,在立式搅拌机中粉碎4~5小时,加入8~ 12%浓度为10%的聚乙烯醇胶水进行造粒,造粒尺寸控制在80~150目,并 在80~120MPa压力下压制成直径10mm,高度5mm的圆块,在1200~1300℃ 烧结,保温3~5小时,优选控制在1220~1280℃,得到所述微波介质陶 瓷材料的成品。
通过上述的制备方法,调整不同的配方和工艺参数,生产编号从1-10 的10组微波介质陶瓷材料。
具体的原料配方及工艺参数和微波介质陶瓷材料的性能详见表1和表 2。
表1为配方组成
Figure BDA0002410242330000051
Figure BDA0002410242330000061
表2为步骤3的烧结条件及介电性能
Figure BDA0002410242330000062
Figure BDA0002410242330000071
介电性能测试采用KEYSIGHT E5071C网络分析仪,根据Hakki-Coleman 谐振腔法测定介电常数εr和Qf,谐振频率温度系数τf在-40℃~110℃温 度范围内测定,并由公式τf=(f110-f-40)/(f-40×150)计算,其中f110和 f-40分别是110℃和-40℃下的谐振中心频率。从表2中可以看出在较低的烧 结温度下,本发明的微波介质陶瓷材料具有良好的介电性能。
选取编号5的微波介质陶瓷材料通过扫描电子显微镜拍摄其表面微观 形貌图,见图1。从图中可以看出,晶粒排列紧密,气孔较少,符合高品 质因数Qf材料瓷体致密的特征。同时对图1中的不同大小、不同颜色的晶 粒进行能谱分析,图1中的1#晶粒主要成分(Mg,Zn)TiO3,详见图2。2#晶 粒主要成分CaTiO3,详见图3。3#和4#晶粒主要成分Mg2SiO4,详见图4 和图5。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使 用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显 而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的 情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的 这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的 范围。

Claims (7)

1.一种高品质因数微波介质陶瓷材料,其特征在于,包括按以下配方表达式的原料:(1-x)(Mg1-y,Zn)TiO3+xCaTiO3+awt%Mg2SiO4+bwt%MO;
其中,0.03≤x≤0.08,0.05≤y≤0.3,0≤a≤15,0≤b≤3;所述a和b分别为所述Mg2SiO4和MO占(1-x)(Mg1-y,Zn)TiO3+xCaTiO3的质量百分数;MO为金属氧化物。
2.根据权利要求1所述的高品质因数微波介质陶瓷材料,其特征在于,所述MO为金属氧化物MnO2、Al2O3、CeO2和Nb2O5中的一种或多种。
3.根据权利要求2所述的高品质因数微波介质陶瓷材料,其特征在于,所述微波介质陶瓷材料的配方表达式中,0.04≤x≤0.07,0.05≤y≤0.2,0≤a≤10,0≤b≤2。
4.一种高品质因数微波介质陶瓷材料的制备方法,其特征在于,包括以下步骤:
步骤1,合成Mg2SiO4;将分析纯MgCO3和SiO2按照Mg2SiO4的化学计量比进行配料,形成第一配料,在卧式球磨机中磨合烘干后,煅烧合成Mg2SiO4
步骤2,预烧合成料;将分析纯MgCO3、CaCO3、TiO2和ZnO按化学式(1-x)(Mg1-y,Zn)TiO3+xCaTiO3进行称量,并加入权利要求1-3中任一所述的微波介质陶瓷材料的原料比例的金属氧化物MO及步骤1中合成的Mg2SiO4,形成第二配料,在卧式球磨机中磨合烘干后,在1000℃~1200℃大气气氛中煅烧4-6小时,得到预烧合成料;
步骤3,烧结成品;将步骤2中的所述预烧合成料进行粉碎,加入胶水造粒,然后压制成型,在1200~1300℃烧结,保温3~5小时,得到所述微波介质陶瓷材料的成品。
5.根据权利要求4所述的高品质因数微波介质陶瓷材料的制备方法,其特征在于,步骤1中,配制成所述第一配料后,并按所述第一配料:去离子水:氧化锆球重量比为1:(2~3):(3~4)的比例,在卧式球磨机中混合20~24小时,混合后的浆料在120~150℃烘干后,过40目筛,装入氧化铝坩埚,在1150℃~1250℃大气气氛中煅烧4~6小时,合成Mg2SiO4料。
6.根据权利要求4所述的高品质因数微波介质陶瓷材料的制备方法,其特征在于,步骤2中,配制成所述第二配料后,并按所述第二配料:去离子水:氧化锆球重量比为1:(2~3):(3~4)的比例,在卧式球磨机中混合20~24小时,混合后的浆料在120~150℃烘干后,过40目筛,装入氧化铝坩埚,在1050℃~1150℃大气气氛中煅烧4~6小时,得到预烧合成料。
7.根据权利要求4所述的高品质因数微波介质陶瓷材料的制备方法,其特征在于,步骤3中,将所述预烧合成料:去离子水:氧化锆球重量比为1:(0.8~1.2):(3~4)的比例,在立式搅拌机中粉碎4~5小时,加入8~12%浓度为10%的聚乙烯醇胶水进行造粒,造粒尺寸控制在80~150目,并在80~120MPa压力下压制成直径10mm,高度5mm的圆块,在1220~1280℃烧结,保温3~5小时,得到所述微波介质陶瓷材料的成品。
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