CN111490450A - 808nm laser epitaxial wafer and preparation method thereof - Google Patents

808nm laser epitaxial wafer and preparation method thereof Download PDF

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Publication number
CN111490450A
CN111490450A CN202010332114.1A CN202010332114A CN111490450A CN 111490450 A CN111490450 A CN 111490450A CN 202010332114 A CN202010332114 A CN 202010332114A CN 111490450 A CN111490450 A CN 111490450A
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layer
grating
epitaxial wafer
laser epitaxial
preparing
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罗帅
季海铭
徐鹏飞
王岩
王俊
徐智鹏
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Jiangsu Huaxing Laser Technology Co ltd
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Jiangsu Huaxing Laser Technology Co ltd
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Priority to CN202010332114.1A priority Critical patent/CN111490450A/en
Priority to PCT/CN2020/092470 priority patent/WO2021212598A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers

Abstract

The invention relates to the technical field of semiconductors, in particular to a 808nm laser epitaxial wafer and a preparation method thereof, which are different in that the method comprises the following steps: step 1: selecting a GaAs substrate; step 2: depositing a buffer layer, a lower limiting layer and a grating layer on the substrate in sequence; and step 3: preparing a grating pattern on the grating layer; and 4, step 4: and continuously and sequentially growing a covering layer, a cladding layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer and a contact layer on the grating layer with the grating pattern to finish the preparation. The laser epitaxial wafer prepared by the invention has low wavelength drift coefficient and high injection efficiency.

Description

808nm laser epitaxial wafer and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a 808nm laser epitaxial wafer and a preparation method thereof.
Background
Since the semiconductor laser appeared in the early sixties of the last century, the semiconductor laser has been widely applied to the fields of daily life, industrial and agricultural production, national defense and military and the like of people due to the performance advantages of wide wavelength coverage range, compact structure, high reliability, easy integration and the like. The performance of semiconductor lasers depends to a large extent on the quality of semiconductor epitaxial wafers, and therefore the preparation of high-quality epitaxial wafers is critical for the preparation of high-performance semiconductor lasers. The semiconductor laser working in 808nm wave band is an essential pumping source for the working of Nd: YAG laser. With the development of the technology, compared with a device made of an aluminum-containing material, the aluminum-free material has the advantages of higher cavity surface optical catastrophic power density, higher thermal conductivity and electrical conductivity, difficult oxidation and the like, and is gradually the mainstream in practical application. The conventional Fabry-Perot (FP) cavity semiconductor laser has wide spectral line width and large spectral variation with temperature and working current, so that the application of the Fabry-Perot (FP) cavity semiconductor laser in the fields of pumping solid lasers and the like is limited. A Distributed Feedback (DFB) semiconductor laser integrates Bragg grating in an epitaxial structure of the laser, realizes a resonant cavity feedback function by utilizing a structure with periodically changed refractive index, has high emission wavelength stability, narrow spectral line width and wide working temperature range, and has wide application prospect and incomparable superiority. Meanwhile, due to the fact that grating material selection and the Bragg microstructure are introduced, the crystal quality of secondary epitaxy and the carrier injection efficiency of a device are greatly influenced, and the working performance of the whole laser is further influenced. Generally, GaAs/AlGaAs materials are usually selected as GaAs base materials, and are used for manufacturing Bragg reflector materials by utilizing the characteristics of lattice matching and large refractive index difference, but the problems of interface oxidation of aluminum-containing materials and the like bring great difficulty to secondary epitaxial growth of high-quality materials.
In view of the above, to overcome the above technical defects, it is an urgent problem in the art to provide a 808nm laser epitaxial wafer and a method for manufacturing the same.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a 808nm laser epitaxial wafer and a preparation method thereof.
In order to solve the technical problems, the technical scheme of the invention is as follows: a method for preparing 808nm laser epitaxial wafers is characterized by comprising the following steps:
step 1: selecting a GaAs substrate;
step 2: depositing a buffer layer, a lower limiting layer and a grating layer on the substrate in sequence;
and step 3: preparing a grating pattern on the grating layer;
and 4, step 4: and continuously and sequentially growing a covering layer, a cladding layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer and a contact layer on the grating layer with the grating pattern to finish the preparation.
According to the technical scheme, the buffer layer is made of GaAs, and the doping concentration is between 1 × 1018~3×1018cm-3The growth rate is between 0.4 and 0.6 nm/s.
According to the technical scheme, the grating layer is divided into three layers from bottom to top, namely a first grating layer, a second grating layer and a third grating layer, the first grating layer and the third grating layer are made of GaInP, and the second grating layer is made of (In) GaAsP.
According to the technical scheme, the grating duty cycle range of the grating layer is 20% -80%.
According to the technical scheme, the covering layer is made of GaInP or GaAs and is 50-100nm thick.
According to the technical scheme, the material of the cladding is (Al)xGa1-x)yIn1-yP and Al components x is between 0.1 and 0.6, y is between 0.4 and 0.6, and the thickness is between 50 and 500 nm.
According to the technical scheme, the quantum well layer is made of GaAsP or InGaAsP and is 5-15nm thick.
According to the technical scheme, the lower waveguide layer and the upper waveguide layer are made of GaInP or AlGaInP and have the thickness of 400-1200 nm.
According to the technical scheme, the lower limiting layer and the upper limiting layerIs (Al)xGa1-x)yIn1-yP and Al components x is between 0.3 and 0.8, and y is between 0.4 and 0.6.
A808 nm laser epitaxial wafer prepared according to the preparation method is characterized in that: the optical grating comprises a substrate, a buffer layer, a lower limiting layer, a grating layer, a covering layer, a cladding layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer and a contact layer from bottom to top in sequence.
By the scheme, the invention discloses a 808nm laser epitaxial wafer and a preparation method thereof, which realize the locking of the drift speed of laser wavelength along with the injection current by inserting GaInP/InGaAsP/GaInP grating into an AlGaInP cladding layer and greatly improve the crystal quality of a secondary epitaxial material; the impedance of a carrier passing through the Bragg reflector is reduced by the design of the N-face grating; high grating coupling efficiency is realized through the design of the cladding energy band, the spatial hole burning effect is reduced, and the output performance of the laser is improved.
Drawings
FIG. 1 is a schematic flow chart of a preparation method according to an embodiment of the present invention;
fig. 2 is a schematic overall structure diagram of a laser epitaxial wafer according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a laser epitaxial wafer according to an embodiment of the present invention before a grating is fabricated;
FIG. 4 is a schematic structural diagram of a laser epitaxial wafer after a grating is fabricated according to an embodiment of the present invention;
wherein: 1-a substrate; 2-a buffer layer; 3-a lower limiting layer; 4-a first grating layer; 5-a second grating layer; 6-a third grating layer; 7-a cover layer; 8-cladding; 9-a lower waveguide layer; 10-quantum well layer; 11-an upper waveguide layer; 12-an upper confinement layer; 13-contact layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Many aspects of the invention are better understood with reference to the following drawings. The components in the drawings are not necessarily to scale. Instead, emphasis is placed upon clearly illustrating the components of the present invention. Moreover, in the several views of the drawings, like reference numerals designate corresponding parts.
The word "exemplary" or "illustrative" as used herein means serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" or "illustrative" is not necessarily to be construed as preferred or advantageous over other embodiments. All of the embodiments described below are exemplary embodiments provided to enable persons skilled in the art to make and use the examples of the disclosure and are not intended to limit the scope of the disclosure, which is defined by the claims. In other instances, well-known features and methods are described in detail so as not to obscure the invention. For purposes of the description herein, the terms "upper," "lower," "left," "right," "front," "rear," "vertical," "horizontal," and derivatives thereof shall relate to the invention as oriented in fig. 1. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description. It is also to be understood that the specific devices and processes illustrated in the attached drawings, and described in the following specification are simply exemplary embodiments of the inventive concepts defined in the appended claims. Hence, specific dimensions and other physical characteristics relating to the embodiments disclosed herein are not to be considered as limiting, unless the claims expressly state otherwise.
Referring to fig. 1 and fig. 2, a method for fabricating an 808nm laser epitaxial wafer according to the present invention is different in that: which comprises the following steps:
step 1: selecting a GaAs substrate 1, wherein the GaAs substrate 1 is a GaAs single crystal wafer, the crystal orientation is (001), and the off-angle is + -0.5oWith a thickness of 325-375 μm and a doping concentration of (2-8) × 1018cm-3；
Step 2: a GaAs buffer layer 2, a lower limiting layer 3 and a grating layer are sequentially deposited on the substrate 1; GaAs buffer layer2 thickness of 500nm, growth temperature of 600-660 deg.C, and doping concentration of 1 × 1018To 3 × 1018cm-3Meanwhile, the growth speed is about 0.4-0.6 nm/s, and the excessively fast growth speed is not beneficial to the formation of a high-quality buffer layer; wherein the lower limiting layer 3 is (Al)xGa1-x)yIn1-yP material, Al component x is 0.5, and the doping concentration is between 1 × 1018To 2 × 1018cm-3The growth temperature is between 630 and 680 ℃, and the thickness is 1000 nm; the grating layer is divided into a first grating layer 4, a second grating layer 5 and a third grating layer 6 from bottom to top, the materials are GaInP, InGaAsP and GaInP respectively, the mismatch degree of the materials is less than +/-500 ppm, the growth temperature is between 630-680 ℃, and the total thickness is 70 nm.
And step 3: and (3) manufacturing an N-surface grating pattern on the epitaxial substrate (grating layer). Specifically, the substrate is cleaned by using an organic solvent, washed by using a large amount of deionized water and dried by spin-drying. The secondary Bragg grating required by the 808nm DFB semiconductor laser epitaxial wafer is obtained after the processes of pre-baking, glue homogenizing, post-baking, holographic exposure, developing, film hardening, etching, glue removing and the like. The exposure time and the development time were matched to obtain a duty ratio of 0.25. The grating period is 240 nm and the depth is 60 nm. After the manufacturing is finished, the surface appearance, the period and the depth of the grating are tested through an Atomic Force Microscope (AFM) and a Scanning Electron Microscope (SEM), and the manufactured graph is ensured to meet the design requirement. In this step, the three layers of material of the grating layer are partially etched away, and then the capping layer 7 and the subsequent layers are grown in the etched trench.
And 4, step 4: and continuously growing a covering layer 7, a cladding layer 8, a lower waveguide layer 9, a quantum well layer 10, an upper waveguide layer 11, an upper limiting layer 12 and a contact layer 13 on the substrate with the grating pattern. Specifically, the substrate manufactured in step 3 is cleaned by using a solvent, and is washed by using a large amount of deionized water and dried. Then placing the substrate into an MOCVD growth reaction chamber, and fully desorbing the surface oxide layer of the substrate by heating. Wherein, the covering layer 7 is made of GaInP material and grows to a thickness of 50-100nm, so as to ensure that the grating layer is fully covered. The cladding 8 of which is (Al)xGa1-x)yIn1-yP material, Al component x is 0.3, and the doping concentration is between 5 × 1017To 1 × 1018cm-3The growth temperature is between 630 ℃ and 680 ℃ and the thickness is 50-500 nm. The lower waveguide layer 9 and the upper waveguide layer 11 are made of GaInP materials, the mismatch degree of the materials is less than +/-500 ppm, the growth temperature is between 630 and 680 ℃, the total thickness is 400 and 1200nm, and the quantum well layer 10 is made of GaAsP materials and has the thickness of 5-15 nm; the upper limiting layer 12 is (Al)xGa1-x)yIn1-yP material, Al component x is 0.5, Zn or Mg is adopted as a dopant, and the doping concentration is between 5 × 1017To 1.5 × 1018cm-3The growth temperature is between 630 and 680oAnd the thickness between C is 500-1500 nm. The contact layer 13 is made of GaAs material and has the doping concentration of more than 5E18 cm-3The growth temperature is lower than 650 ℃, and in the embodiment, the doping concentration adopted by the method is 5E19 cm-3The growth temperature is 600 ℃, and the excessive growth temperature can cause the outward diffusion escape of Zn, thereby reducing the doping concentration of the contact layer and increasing the contact resistance.
The 808nm laser epitaxial wafer prepared according to the preparation method is different in that: the optical grating comprises a GaAs substrate, a buffer layer, a lower limiting layer, a grating layer, a covering layer, a cladding layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer and a contact layer from bottom to top in sequence. And N grating patterns are prepared on the grating layer.
The epitaxial material growth equipment is MOCVD, and the sources used in the epitaxial growth process are trimethyl indium (TMIn), trimethyl gallium (TMGa), triethyl gallium (TEGa), arsine (AsH 3), phosphine (PH 3), silane (SiH 4) and diethyl zinc (DEZn).
The embodiment of the invention is based on energy band structure design and combines MOCVD epitaxial process and grating microstructure manufacturing. The 808nm wave band semiconductor laser epitaxial material is grown through Molecular Beam Epitaxy (MBE) or Metal Organic Chemical Vapor Deposition (MOCVD), and the grating is manufactured by combining the holographic, electron beam exposure or nano-imprint technology, so that the 808nm wave band laser epitaxial wafer for laser pumping with low wavelength drift coefficient and high injection efficiency is realized.
The foregoing is a more detailed description of the present invention that is presented in conjunction with specific embodiments, and the practice of the invention is not to be considered limited to those descriptions. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. A method for preparing 808nm laser epitaxial wafers is characterized by comprising the following steps:
step 1: selecting a GaAs substrate;
step 2: depositing a buffer layer, a lower limiting layer and a grating layer on the substrate in sequence;
and step 3: preparing a grating pattern on the grating layer;
and 4, step 4: and continuously and sequentially growing a covering layer, a cladding layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer and a contact layer on the grating layer with the grating pattern to finish the preparation.
2. The method for preparing the 808nm laser epitaxial wafer according to claim 1, wherein the buffer layer is made of GaAs and has a doping concentration of 1 × 1018~3×1018cm-3The growth rate is between 0.4 and 0.6 nm/s.
3. The method for preparing 808nm laser epitaxial wafer according to claim 1, wherein the steps of: the grating layer is divided into a first grating layer, a second grating layer and a third grating layer from bottom to top, the first grating layer and the third grating layer are made of GaInP, and the second grating layer is made of (In) GaAsP.
4. The method for preparing 808nm laser epitaxial wafer according to claim 3, wherein the steps of: the grating duty cycle range of the grating layer is 20% -80%.
5. The method for preparing 808nm laser epitaxial wafer according to claim 1, wherein the steps of: the covering layer is made of GaInP or GaAs and is 50-100nm thick.
6. The method for preparing 808nm laser epitaxial wafer according to claim 1, wherein the steps of: the material of the cladding is (Al)xGa1-x)yIn1-yP and Al components x is between 0.1 and 0.6, y is between 0.4 and 0.6, and the thickness is between 50 and 500 nm.
7. The method for preparing 808nm laser epitaxial wafer according to claim 1, wherein the steps of: the quantum well layer is made of GaAsP or InGaAsP and is 5-15nm thick.
8. The method for preparing 808nm laser epitaxial wafer according to claim 1, wherein the steps of: the lower waveguide layer and the upper waveguide layer are made of GaInP or AlGaInP and have the thickness of 400-1200 nm.
9. The method for preparing 808nm laser epitaxial wafer according to claim 1, wherein the steps of: the material of the lower limiting layer and the upper limiting layer is (Al)xGa1-x)yIn1-yP and Al components x is between 0.3 and 0.8, and y is between 0.4 and 0.6.
10. A 808nm laser epitaxial wafer prepared according to the method of any one of claims 1 to 9, wherein: the optical grating comprises a substrate, a buffer layer, a lower limiting layer, a grating layer, a covering layer, a cladding layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer and a contact layer from bottom to top in sequence.
CN202010332114.1A 2020-04-24 2020-04-24 808nm laser epitaxial wafer and preparation method thereof Pending CN111490450A (en)

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PCT/CN2020/092470 WO2021212598A1 (en) 2020-04-24 2020-05-27 808 nm laser epitaxial wafer and preparation method therefor

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Publication number Priority date Publication date Assignee Title
DE10200360B4 (en) * 2002-01-08 2004-01-08 Forschungsverbund Berlin E.V. Method for producing a Bragg grating in a semiconductor layer sequence by means of etching and semiconductor component
JP2005203392A (en) * 2004-01-13 2005-07-28 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof
CN101841129B (en) * 2010-05-24 2011-06-29 中国科学院长春光学精密机械与物理研究所 Monolithic phase-locked surface-emitting distributed feedback semiconductor laser array
CN205752984U (en) * 2016-07-01 2016-11-30 单智发 A kind of epitaxial structure of Distributed Feedback Laser
CN106329312B (en) * 2016-11-02 2019-04-16 中国电子科技集团公司第四十四研究所 Band built in light gate semiconductor laser
CN106340806A (en) * 2016-11-14 2017-01-18 北京青辰光电科技有限公司 Manufacturing method for distributed feedback semiconductor laser with wavelength of 650nm

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