CN101841129B - Monolithic phase-locked surface-emitting distributed feedback semiconductor laser array - Google Patents
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Abstract
The invention relates to a monolithic phase-locked surface-emitting distributed feedback semiconductor laser array, in particular to a new semiconductor laser array phase-locked structure solving the problems of monolithic incapability and difficult mounting and debugging of a traditional external coupling (Talbot outer cavity) phase-locked technology and the problem of a traditional internal coupling (leakage wave coupling) phase-locked technology that the light extraction efficiency is influenced by the limited width of a light extraction area. The structure comprises distribution Bragg reflectors and surface-emitting distribution feedback semiconductor laser array strips which are periodically and alternately arranged, an outer cavity feedback laser is formed by each surface-emitting distribution feedback semiconductor laser array strip and distribution Bragg reflectors at the left end and the right end, the distribution Bragg reflector at the left end provides the optical feedback of the outer cavity for the outer cavity feedback laser, the distribution Bragg reflector at the right end provides end surface reflection, and another outer cavity feedback laser is formed by the distribution Bragg reflector at the right end and the next laser array strip. The invention can be applied to the fields of military affairs, industries, medical treatment, space optical communication, and the like.
Description
Technical field
The present invention relates to the phase-locked structure of new semiconductor laser array, especially possess the semiconductor laser array of high power, relevant output.
Background technology
That semiconductor laser has is small and exquisite, efficient, the life-span long, be easy to plurality of advantages such as integrated.Coherent laser is compared with incoherent laser, has better spatial model, higher peak power and power density again, has application prospects more at aspects such as light interconnection, optical communication, industry, military affairs, medical treatment.The semiconductor laser that produces high power, high coherence, diffraction limit bright dipping is the target that people pursue always.
The key that realizes the semiconductor laser coherent light emission is the phase place between each laser element of locking, and the difference according to adopting coupled modes can be divided into inner couplings and coupled outside.The inner couplings mode mainly contains: leaky wave coupling, evanescent wave coupling, the coupling of Y type and the coupling of X type etc.The inner couplings compact conformation, but that the width of luminescence unit often can not be done is very big, has limited the power of phase-locked output, is difficult to adapt to high-power requirement; The coupled outside mode can be divided into two classes: seed injection locking and exocoel are phase-locked.Exocoel is phase-locked to be the diffraction of generation when utilizing light beam to propagate in exocoel and the feedback effect of external cavity mirror, set up the mechanism that intercouples between each laser element, its method mainly comprises: space filtering technology, phase conjugation and Talbot exocoel technology etc.Seed injection locking needs the main laser of an extra outputting high quality laser, and expensive optical isolator.And the locking in EC phase system is simple in structure, and effect is better.
Single slice integration technique is that optical element is integrated on the monolithic substrate, and light is propagated along predetermined light path.This technology can obviously improve the stability of optical system and the compactedness of complication system, reduces the processing of traditional optical mechanical system greatly and debugs cost simultaneously.Realized simple optical system at present, integrated as the monolithic of light source and detector integrated system, integrated hybrid imaging system etc.
Research to the phase-locked semiconductor laser of Talbot exocoel is quite deep, the integrated Talbot exocoel of monolithic Phase Lock Technique then rarely had report, trace it to its cause and be, traditional edge-emission semiconductor laser can only be put the Talbot external cavity mirror by an end, other end bright dipping, therefore only can realize that one dimension Talbot exocoel is phase-locked, can't realize that two dimension is integrated.
At present, realize that the phase-locked mode of surface launching distributed feed-back (SE-DFB) semiconductor laser array also only limits to anti-waveguide-coupled, belong to above-mentioned leaky wave coupling category, choosing the device performance influence of its luminous zone width is very big, so element manufacturing and job stability are not high.In addition and since exist above-mentioned luminous zone width can't do very big problem, the luminous power that goes out of the phase-locked surface launching distributed feedback semiconductor laser of anti-waveguide-coupled array also is greatly limited.
Summary of the invention
The present invention can't realize that for solving existing coupled outside (Talbot exocoel) Phase Lock Technique that adopts monolithic is integrated, debugs difficulty; Inner couplings (leaky wave coupling) Phase Lock Technique proposes a kind of monolithic phase-locked surface-emitting distributed feedback semiconductor laser array because of the output optical zone restricted width influences the problem of luminous power.
Monolithic phase-locked surface-emitting distributed feedback semiconductor laser array, comprise M distributed Bragg reflector and N surface launching distributed feedback semiconductor laser array bar, each distributed Bragg reflector and each surface launching distributed feedback semiconductor laser array bar periodic intervals are arranged, and the distributed Bragg reflector at described each surface launching distributed feedback semiconductor laser array bar and two ends, the left and right sides constitutes the exocoel feedback laser; The distributed Bragg reflector of described each surface launching distributed feedback semiconductor laser array bar left end provides the light feedback of exocoel for described exocoel feedback laser; The left side of each surface launching distributed feedback semiconductor laser array bar is Z apart from the distance of distributed Bragg reflector
t/ 2, Z wherein
t=2nd
2/ λ, n are the waveguide material refractive index, and d is the distance of the adjacent laser element in the described surface launching distributed feedback semiconductor laser array bar, and λ is a design wavelength; The distributed Bragg reflector of each surface launching distributed feedback semiconductor laser array bar right-hand member provides end face reflection for described exocoel feedback laser; Described M and N are natural number, and M=N+1.
Principle of the present invention: surface launching distributed feedback semiconductor laser array bar and distributed Bragg reflector that the present invention adopts periodic intervals to arrange; The distributed Bragg reflector of each surface launching distributed feedback semiconductor laser array bar and its left end constitutes outside cavity gas laser, and its right-hand member next-door neighbour's distributed Bragg reflector provides end face reflection for it; Wherein, each surface launching distributed feedback semiconductor laser array bar is made of P laser element.Each laser element comprises a second order distributed feedback grating, and this grating can provide two orders of diffraction, and first-order diffraction provides the light feedback, and second-order diffraction provides surperficial bright dipping, obtains swashing the launch loss that penetrates light and Z direction along the bottom surface of Y direction.The left side of each surface launching distributed feedback semiconductor laser array bar is Z apart from the distributed Bragg reflector distance
t/ 2, Z wherein
t=2nd
2/ λ, n are the waveguide material refractive index, and d is a laser element directions X centre distance, and λ is a design wavelength, satisfy Talbot and have image distance of one's own from requiring; Described distributed Bragg reflector, by the single order optical grating constitution, its cycle is satisfied Bragg condition, is about half of second order distributed feedback light grid cycle.Total is obtained by the diauxic growth technology of semi-conducting material, and second order grating and single order grating are produced on the ducting layer by holographic exposure or electron beam lithography and reactive ion beam etching (RIBE), thereby obtain high-power coherent beam.
Beneficial effect of the present invention: the present invention has designed the phase-locked structure of new laser array in conjunction with exocoel Phase Lock Technique, single slice integration technique and surface launching distributed feedback semiconductor laser technology.Adopt surface launching distributed feedback semiconductor laser array bar (SE-DFB) and distributed Bragg reflector (DBR) periodic intervals to arrange, the realization two dimensional surface is integrated, and obtain high power, high degree of coherence light beam, the output of the little laser of the angle of divergence, and temperature is floated plurality of advantages such as little, not damaged threshold value, easily heat radiation, far field single-lobe distribution.Can overcome simultaneously traditional Talbot exocoel and debug the deficiency of difficulty.
Description of drawings
Fig. 1 is the integrated phase-locked array stereogram of the monolithic of the specific embodiment of the invention two;
Fig. 2 is the integrated phase-locked array front view of the monolithic of the specific embodiment of the invention two;
Fig. 3 is a surface launching distributed feedback semiconductor laser array vertical view of the present invention;
Fig. 4 is a surface launching distributed feedback semiconductor laser array upward view of the present invention.
Among the figure: 1, first distributed Bragg reflector, 2, the first surface launching distributed feedback semiconductor laser array bar, 3, second distributed Bragg reflector, 4, the second surface launching distributed feedback semiconductor laser array bar, 5, the 3rd distributed Bragg reflector, 6, the 3rd surface launching distributed feedback semiconductor laser array bar, 7, the 4th distributed Bragg reflector, 8, electrode, 9, light hole, 10, substrate, 11, resilient coating, 12, lower waveguide layer, 13, multiple quantum well layer, 14, last ducting layer, 15, top covering, 16, contact layer, 17, the silica dioxide medium film, 18, metal electrode, 19, the first single order grating, 39, the second single order grating, 59, the 3rd single order grating, 79, the 4th single order grating, 21, first laser element, 22, second laser element, 23, the 3rd laser element, 24, the 4th laser element, 25, the 5th laser element, 26, the 6th laser element, 27, first second order grating, 47, second second order grating, 67, the 3rd second order grating.
Embodiment
Embodiment one: the described a kind of monolithic phase-locked surface-emitting distributed feedback semiconductor laser array of present embodiment, comprise M distributed Bragg reflector and N surface launching distributed feedback semiconductor laser array bar, each distributed Bragg reflector and each surface launching distributed feedback semiconductor laser array bar periodic intervals are arranged, and the distributed Bragg reflector at described each surface launching distributed feedback semiconductor laser array bar and two ends, the left and right sides constitutes the exocoel feedback laser; The distributed Bragg reflector of described each surface launching distributed feedback semiconductor laser array bar left end provides the light feedback of exocoel for described exocoel feedback laser; The distributed Bragg reflector of each surface launching distributed feedback semiconductor laser array bar right-hand member provides end face reflection for described exocoel feedback laser; Described M and N are natural number, and M=N+1.
Described each distributed Bragg reflector of present embodiment is by single order distributed Blatt reflective optical grating constitution; Each surface launching distributed feedback semiconductor laser array bar comprises a second order distributed feedback grating; Described preparing grating is in the last ducting layer 14 of chip of laser; Described second order distributed feedback grating has two orders of diffraction, and first-order diffraction provides the light feedback, and second-order diffraction provides surperficial bright dipping.Obtain swashing the launch loss that penetrates light and Z direction along the bottom surface of Y direction; Because exocoel feedback modulating action makes all laser elements of each surface launching distributed feedback semiconductor laser array bar realize phase-locked operation, finally obtains the high-power coherent light beam in the Y direction.
Described each the surface launching distributed feedback semiconductor laser array bar of present embodiment has P laser element on the laser element repetition direction, that is: P laser element arranged on directions X, the long scope in the chamber of described each laser element is 100～500 μ m; The scope of described P is by the size decision of wafer.
Described each laser element of present embodiment is the ridge waveguide structure, and the width of each ridge waveguide is 1～5 μ m; Metallized electrode 18 on described each ridge waveguide; Can realize the single transverse mode operation of side direction of laser; The distance of described every adjacent two laser elements is between 5～50 μ m.
The bottom surface of described each the surface launching distributed feedback semiconductor laser array bar of present embodiment is made up of electrode 8 and light hole 9.
The left side of described each the surface launching distributed feedback semiconductor laser array bar of present embodiment is Z apart from the distance of distributed Bragg reflector
t/ 2, Z wherein
t=2nd
2/ λ, n are the waveguide material refractive index, and d is the distance of the adjacent laser element in the described surface launching distributed feedback semiconductor laser array bar, and λ is a design wavelength; Satisfy Talbot have of one's own image distance from requirement.
Each cycle is λ/2n to the length of described each distributed Bragg reflector of present embodiment more than cycle at 50, so that the feedback of the light more than 90% to be provided.
Embodiment two: present embodiment one is the specific embodiment of embodiment one described monolithic phase-locked surface-emitting distributed feedback semiconductor laser array; In conjunction with Fig. 1 present embodiment is described further;
Embodiment 1: the material system that present embodiment adopts is InGaAs/InGaAsP, goes out optical wavelength 940nm; Described monolithic integrated structure comprises periodic intervals four distributed Bragg reflectors of arrangement and three surface launching distributed feedback semiconductor laser array bars, the described first surface launching distributed feedback semiconductor laser array bar 2 constitutes the exocoel feedback laser with first distributed Bragg reflector 1 of its left end, second distributed Bragg reflector 3 of right-hand member, described first distributed Bragg reflector provides the exocoel feedback light for described outside cavity gas laser, and second distributed Bragg reflector provides end face reflection for the exocoel feedback laser; The described second surface launching distributed feedback semiconductor laser array bar 4 constitutes the exocoel feedback laser with second distributed Bragg reflector 3 of its left end, the 3rd distributed Bragg reflector 5 of right-hand member, described second distributed Bragg reflector 3 provides the exocoel feedback light for described outside cavity gas laser, and the 3rd distributed Bragg reflector 5 provides end face reflection for the exocoel feedback laser; Described the 3rd surface launching distributed feedback semiconductor laser array bar 6 constitutes the exocoel feedback laser with the 3rd distributed Bragg reflector 5 of its left end, the 4th distributed Bragg reflector 7 of right-hand member, described the 3rd distributed Bragg reflector 5 provides the exocoel feedback light for described outside cavity gas laser, and the 4th distributed Bragg reflector 7 provides end face reflection for the exocoel feedback laser; Each surface launching distributed feedback semiconductor laser array bar is made of first laser element 21, second laser element 22, the 3rd laser element 23, the 4th laser element 24, the 5th laser element 25, the 6th laser element 26.Its manufacturing process is: this monolithic integrated structure is finished by the secondary material epitaxial growth.Described substrate 10 for GaAs, resilient coating 11 for GaAs, lower waveguide layer 12 for GaInP, multiple quantum well layer 13 for InGaAs or InGaAsP, go up ducting layer 14 and finish by the epitaxial growth first time (metal organic chemical vapor deposition) for InGaAsP; Next adopts holographic exposure and reactive ion beam etching (RIBE) to make first second order grating 27, second second order grating 47, the 3rd second order grating 67, the first single order grating 19, the second single order grating 39, the 3rd single order grating 59 and the 4th single order grating 79 on the ducting layer on whole, secondary epitaxy growth top covering 15 is InGaP then, and contact layer 16 is GaAs; Then adopt photoetching and etching to make 6 * 3 ridge waveguides, make metal electrode 18 on the ridge waveguide, all carrying out electricity with silica dioxide medium film 17 between two metal electrodes isolates, pass through substrate 10 attenuates at last again, back side plated electrode 8 at each surface launching distributed feedback semiconductor laser array bar, make big light hole 9, entire device completes.
The integrated structure of forming of the described monolithic of present embodiment has making simply, the advantage of compact conformation.
The described laser element of present embodiment chamber length is 400 μ m, and the duct width of ridge waveguide is 1 μ m, and the cycle of second order grating is 290nm; The distance of adjacent laser element is for being 10 μ m in each surface launching distributed feedback semiconductor laser array bar; The bottom light hole is 1.5 μ m * 200 μ m; Each distributed Bragg reflector cycle is 145nm, and its length is 50 cycles; Each surface launching distributed feedback semiconductor laser array bar left side is 336 μ m apart from the distributed Bragg reflector distance.
Embodiment 2: the waveguide material system that present embodiment adopts is InP or InGaAsP, and going out optical wavelength is 1550nm.Substrate 10 is n-InP, and resilient coating 11 is n-InP, and lower waveguide layer 12 is n-InGaAsP, and active layer is In
0.56Ga
0.44As
0..95P
0.05/ In
0.74Ga
0.26As
0.57P
0.43Multiple quantum well layer 13, last ducting layer 14 is p-InGaAsP, make first second order grating 27, second second order grating 47, the 3rd second order grating 67, the first single order grating 19, the second single order grating 39, the 3rd single order grating 59 and the 4th single order grating 79 on whole on the ducting layer, secondary epitaxy growth p-InP top covering 15 then, and contact layer 16 is p-InP.Other process is identical with embodiment 1.
The described laser element of present embodiment chamber length is 500 μ m, and the duct width of ridge waveguide is 1.5 μ m, and the cycle of second order grating is 477nm; The distance of adjacent laser element is 10 μ m in each surface launching distributed feedback semiconductor laser array bar; The bottom light hole is 40 μ m * 300 μ m; The distributed Bragg reflector cycle is 239nm, and length is that 60 cycles, (each cycle was λ/2n); Each surface launching distributed feedback semiconductor laser array bar left side is 439 μ m apart from the distributed Bragg reflector distance.
Claims (9)
1. monolithic phase-locked surface-emitting distributed feedback semiconductor laser array, comprise M distributed Bragg reflector and N surface launching distributed feedback semiconductor laser array bar, it is characterized in that, each distributed Bragg reflector and each surface launching distributed feedback semiconductor laser array bar periodic intervals are arranged, and the distributed Bragg reflector at described each surface launching distributed feedback semiconductor laser array bar and two ends, the left and right sides constitutes the exocoel feedback laser; The distributed Bragg reflector of described each surface launching distributed feedback semiconductor laser array bar left end provides the light feedback of exocoel for described exocoel feedback laser; The left side of each surface launching distributed feedback semiconductor laser array bar is Z apart from the distance of distributed Bragg reflector
t/ 2, Z wherein
t=2nd
2/ λ, n are the waveguide material refractive index, and d is the distance of the adjacent laser element in the described surface launching distributed feedback semiconductor laser array bar, and λ is a design wavelength; The distributed Bragg reflector of each surface launching distributed feedback semiconductor laser array bar right-hand member provides end face reflection for described exocoel feedback laser; Described M and N are natural number, and M=N+1.
2. monolithic phase-locked surface-emitting distributed feedback semiconductor laser array according to claim 1 is characterized in that, described each distributed Bragg reflector is by single order distributed Blatt reflective optical grating constitution.
3. monolithic phase-locked surface-emitting distributed feedback semiconductor laser array according to claim 1 is characterized in that, described each surface launching distributed feedback semiconductor laser array bar comprises a second order distributed feedback grating; Described second order distributed feedback grating has two orders of diffraction, and first-order diffraction provides the light feedback, and second-order diffraction provides surperficial bright dipping.
4. according to claim 2 or 3 described monolithic phase-locked surface-emitting distributed feedback semiconductor laser arrays, it is characterized in that described grating is positioned at the last ducting layer (14) of chip of laser.
5. monolithic phase-locked surface-emitting distributed feedback semiconductor laser array according to claim 1, it is characterized in that, described each surface launching distributed feedback semiconductor laser array bar has P laser element on the laser element repetition direction, the long scope in the chamber of described each laser element is 100～500 μ m; The value of described P is determined by wafer size.
6. monolithic phase-locked surface-emitting distributed feedback semiconductor laser array according to claim 5 is characterized in that, each laser element is the ridge waveguide structure, and the width of each ridge waveguide is 1～5 μ m; Metallized electrode (18) on described each ridge waveguide.
7. monolithic phase-locked surface-emitting distributed feedback semiconductor laser array according to claim 5 is characterized in that, the distance of every adjacent two laser elements is 5～50 μ m.
8. monolithic phase-locked surface-emitting distributed feedback semiconductor laser array according to claim 1 is characterized in that, the bottom surface of described each surface launching distributed feedback semiconductor laser array bar is made up of electrode (8) and light hole (9).
9. monolithic phase-locked surface-emitting distributed feedback semiconductor laser array according to claim 1 is characterized in that, the length of each distributed Bragg reflector is at 50 more than the cycle.
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| CN104393485B (en) * | 2014-09-26 | 2017-10-27 | 中国科学院长春光学精密机械与物理研究所 | Laser array relevant device and preparation method thereof |
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| CN107305267A (en) * | 2016-04-25 | 2017-10-31 | 南京理工大学 | It is a kind of to produce the ridge waveguide coupling array of super model |
| CN106356714B (en) * | 2016-11-21 | 2019-03-19 | 长春理工大学 | A kind of side-coupled surface-emitting laser and its manufacturing method |
| CN106329315B (en) * | 2016-11-21 | 2019-01-18 | 长春理工大学 | A kind of surface launching distributed feedback laser |
| CN112531463B (en) | 2017-01-16 | 2024-03-26 | 苹果公司 | Combining light-emitting elements of different divergences on the same substrate |
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| US11374381B1 (en) | 2019-06-10 | 2022-06-28 | Apple Inc. | Integrated laser module |
| CN110233426A (en) * | 2019-06-25 | 2019-09-13 | 中国科学院半导体研究所 | A kind of leakage waves coupling locking phase array semi-conductor lasers |
| CN110890690B (en) * | 2019-11-29 | 2021-04-06 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser coherent array and preparation method thereof |
| CN111490450A (en) * | 2020-04-24 | 2020-08-04 | 江苏华兴激光科技有限公司 | 808nm laser epitaxial wafer and preparation method thereof |
| CN114720962B (en) * | 2022-04-09 | 2022-12-02 | 扬州扬芯激光技术有限公司 | All-solid-state laser radar OPA transmitting chip device based on electromagnetic heat control |
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| US4796269A (en) * | 1987-05-22 | 1989-01-03 | Oregon Graduate Center | Two-dimensional phase-locked surface emitting semiconductor laser array |
| US5282220A (en) * | 1992-04-24 | 1994-01-25 | Hughes Aircraft Company | Talbot filtered surface emitting distributed feedback semiconductor laser array |
| CA2473396C (en) * | 2002-01-18 | 2009-06-23 | Wisconsin Alumni Research Foundation | High coherent power, two-dimensional surface-emitting semiconductor diode array laser |
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