CN205752984U - A kind of epitaxial structure of Distributed Feedback Laser - Google Patents
A kind of epitaxial structure of Distributed Feedback Laser Download PDFInfo
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- CN205752984U CN205752984U CN201620685787.4U CN201620685787U CN205752984U CN 205752984 U CN205752984 U CN 205752984U CN 201620685787 U CN201620685787 U CN 201620685787U CN 205752984 U CN205752984 U CN 205752984U
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Abstract
This utility model discloses the epitaxial structure of a kind of Distributed Feedback Laser, including InP substrate, InP substrate is disposed with from bottom to top cushion, lower limit layer, lower waveguide layer, active layer, on ducting layer, upper limiting layer, the second cushion, corrosion barrier layer, covering and grating layer；It is provided above with secondary epitaxy layer at grating layer, described secondary epitaxy layer includes grating covering, potential barrier graded bedding and ohmic contact layer from bottom to top, described grating covering includes light gate overlap and transition zone, described grating overburden cover 1.5nm bigger than grating layer thickness 8nm.Further, the upper surface of described ohmic contact layer is single ridge waveguide structure；The wavelength of the most described grating layer is 1100nm.This utility model can prevent grating layer to be etched, and promotes Distributed Feedback Laser epitaxial structure quality, reduces the application cost of Distributed Feedback Laser.
Description
Technical field
This utility model relates to Distributed Feedback Laser manufacturing technology field, the epitaxial structure of a kind of Distributed Feedback Laser.
Background technology
Optical communication network uses the carrier that light transmits as signal, compared to using the copper cable telecommunication as transmission medium
Network, speed, capacity and the capacity of resisting disturbance of information interconnection obtain significant raising, thus are used widely.Semiconductor laser
Device is the principal light source of optical communication network, including fabry-Perot type laser (FP laser instrument), distributed feedback laser (DFB)
With vertical cavity surface emitting laser (VCSEL) three types.Wherein, Distributed Feedback Laser sets up Prague light inside quasiconductor
Grid, rely on the distributed feed-back of light to realize the selection of single longitudinal mode, have high speed, narrow linewidth and dynamic single longitudinal mode operation characteristic, and DFB
Laser instrument can suppress the moding of common FP laser instrument in broader operating temperature with current margin, significantly improves
The noise characteristic of device, has a wide range of applications at optical communication field.
The Distributed Feedback Laser wavelength of optic communication is generally 1310 nm and 1550 nm, and general employing InP is growth substrates,
The SQW using AlGaInAs or InGaAsP is active layer.The making of DFB grating typically uses holographic lithography or electron beam light
The method carved, forms width about 200nm on InGaAsP grating layer making layer, and the grating layer of high about 40-50nm, then at this base
Secondary epitaxy layer is grown on plinth.In prior art, secondary epitaxy layer the most only arranges grating covering and ohmic contact layer etc., due to
In grating layer, the equilibrium vapour pressure of P is higher, and during carrying out secondary epitaxy layer growth on grating layer, P can evaporate also
Taken away by carrier gas, make In atom migrate, cause the thickness of grating layer to change with component.Additionally, lattice change can be led
Cause device surface and form highdensity point defect, thus deteriorate device performance.
Utility model content
The technical problems to be solved in the utility model is to provide the epitaxial structure of a kind of Distributed Feedback Laser, and it can prevent grating
Layer is etched, and promotes Distributed Feedback Laser epitaxial structure quality, reduces the application cost of Distributed Feedback Laser.
For reaching above-mentioned purpose, the technical solution of the utility model is: the epitaxial structure of a kind of Distributed Feedback Laser, including InP
Substrate, InP substrate is disposed with from bottom to top cushion, lower limit layer, lower waveguide layer, active layer, on ducting layer, on
Limiting layer, the second cushion, corrosion barrier layer, covering and grating layer；It is provided above with secondary epitaxy layer at grating layer, described two
Secondary epitaxial layer includes that grating covering, potential barrier graded bedding and ohmic contact layer, described grating covering include from bottom to top from bottom to top
Light gate overlap and transition zone, described grating overburden cover 1.5nm-8nm bigger than grating layer thickness.
The thickness of the most described grating layer is 40 nm-50 nm, and described grating overburden cover is bigger than grating layer thickness
2nm-4nm；
The average growth rate of the most described smooth gate overlap is 0.002 nm/s-0.003 nm/s, and described grating covers
The growth temperature of layer is 530-570 ° of C；The average growth rate of described transition zone is 0.15 nm/s-0.55 nm/s, described mistake
The growth temperature crossing layer is 650-690 ° of C.So owing to described smooth gate overlap is at low temperature, at a slow speed lower growth, can obtain preferably
Crystal mass and ensure that grating will not be etched, and described transition zone is at high temperature and faster to grow, secondary epitaxy layer
Quality also can preferably be protected.
The thickness of the most described transition zone is 10 times-20 times of described grating overburden cover.
The thickness of the most described grating layer is 43 nm；In grating layer, screen periods is 210 nm；Described smooth gate overlap
Thickness is 47 nm.
Further, described potential barrier graded bedding includes that the first potential barrier graded bedding that wavelength is 1300nm and wavelength are from bottom to top
The second potential barrier graded bedding of 1500nm.
Further, the upper surface of described ohmic contact layer is single ridge waveguide structure.
The wavelength of the most described grating layer is 1100nm.
Epitaxial structure of the present utility model includes light gate overlap and transition due to the grating covering in secondary epitaxy layer
Layer, the thickness of light gate overlap is more than grating layer 1.5nm-8nm, and light gate overlap can provide to grating layer and preferably protect work
With, particularly allow described smooth gate overlap grow under low temperature, pulsed wait a moment speed, can obtain preferable crystal mass with stably
Structure, it is ensured that grating layer will not be etched, is beneficial to use the mode of different condition to grow described transition zone, allows described transition zone
At high temperature and faster growing, the quality of secondary epitaxy layer also can preferably be protected.This structure is used to improve DFB
Laser epitaxial structure quality, reduces the application cost of Distributed Feedback Laser.
Accompanying drawing explanation
Fig. 1 is the epitaxial structure schematic diagram of this utility model Distributed Feedback Laser.
Detailed description of the invention
With specific embodiment, this utility model is described in further detail below in conjunction with the accompanying drawings.
Shown in Fig. 1, the epitaxial structure of a kind of Distributed Feedback Laser, including InP substrate 1, in InP substrate 1 the most successively
It is provided with cushion 2, lower limit layer 3, lower waveguide layer 4, active layer 5, upper ducting layer 6, upper limiting layer the 7, second cushion 8, corruption
Erosion barrier layer 9, covering 10 and grating layer 11；Be provided above with secondary epitaxy layer at grating layer 11, described secondary epitaxy layer under
Grating covering the 12, first potential barrier graded bedding the 13, second potential barrier graded bedding 14 and ohmic contact layer 15, described light is included successively on and
Grid covering 12 includes that light gate overlap 121 and transition zone 122, the most described smooth gate overlap 121 thickness compare grating from bottom to top
The layer 11 big 1.5nm-8nm of thickness.
The thickness of the most described grating layer is 40 nm-50 nm；Described smooth gate overlap 121 thickness is thicker than grating layer 11
Spend big 2nm-4nm；
The average growth rate of the most described smooth gate overlap 121 is 0.002 nm/s-0.003 nm/s, described transition zone
The average growth rate of 122 is 0.15 nm/s-0.55 nm/s；The growth temperature of described smooth gate overlap 121 is 530-570 °
C, growth temperature more preferably 550 ° of C of described smooth gate overlap 121；The growth temperature of described transition zone 122 is 650-
690 ° of C, the growth temperature of described transition zone 122 more preferably 670 ° of C.
The thickness of the most described transition zone 122 is 10 times-20 times of described smooth gate overlap 121 thickness.
The thickness of further preferred described grating layer 11 is 43 nm；In grating layer 11, screen periods is 210nm；Described light
The thickness of gate overlap 121 is 47 nm.
The upper surface of described ohmic contact layer 15 is single ridge waveguide structure.
The wavelength of described first potential barrier graded bedding 13 is 1300nm, and the wavelength of described second potential barrier graded bedding 14 is
1500nm；The wavelength of described grating layer is 1100nm.
Below being only one preferred embodiment of this utility model, those skilled in the art is equal to by claim work
Change the protection domain both falling within this case.
Claims (8)
1. an epitaxial structure for Distributed Feedback Laser, including InP substrate, is disposed with buffering in InP substrate from bottom to top
Layer, lower limit layer, lower waveguide layer, active layer, upper ducting layer, upper limiting layer, the second cushion, corrosion barrier layer, covering and light
Gate layer；It is provided above with secondary epitaxy layer at grating layer, it is characterised in that: described secondary epitaxy layer includes grating bag from bottom to top
Layer, potential barrier graded bedding and ohmic contact layer, described grating covering includes light gate overlap and transition zone, described grating from bottom to top
Overburden cover 1.5nm-8nm bigger than grating layer thickness.
The epitaxial structure of a kind of Distributed Feedback Laser the most according to claim 1, it is characterised in that: the thickness of described grating layer
It is 40 nm-50 nm, described grating overburden cover 2nm-4nm bigger than grating layer thickness.
The epitaxial structure of a kind of Distributed Feedback Laser the most according to claim 1, it is characterised in that: described smooth gate overlap
Average growth rate is 0.002 nm/s-0.003 nm/s, and the growth temperature of described smooth gate overlap is 530-570 ° of C；Described
The average growth rate of transition zone is 0.15 nm/s-0.55 nm/s, and the growth temperature of described transition zone is 650-690 ° of C.
The epitaxial structure of a kind of Distributed Feedback Laser the most according to claim 1, it is characterised in that: the thickness of described transition zone
It it is 10 times-20 times of described grating overburden cover.
The epitaxial structure of a kind of Distributed Feedback Laser the most according to claim 1, it is characterised in that: the thickness of described grating layer
It is 43 nm；In grating layer, screen periods is 210 nm；The thickness of described smooth gate overlap is 47 nm.
The epitaxial structure of a kind of Distributed Feedback Laser the most according to claim 1, it is characterised in that: described potential barrier graded bedding is certainly
Lower and on include the first potential barrier graded bedding that wavelength is 1300nm and the second potential barrier graded bedding that wavelength is 1500nm.
The epitaxial structure of a kind of Distributed Feedback Laser the most according to claim 1, it is characterised in that: described ohmic contact layer
Upper surface is single ridge waveguide structure.
8. according to epitaxial structure of a kind of Distributed Feedback Laser described in any one of claim 1 to 7 and preparation method thereof, its feature
It is: the wavelength of described grating layer is 1100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201620685787.4U CN205752984U (en) | 2016-07-01 | 2016-07-01 | A kind of epitaxial structure of Distributed Feedback Laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620685787.4U CN205752984U (en) | 2016-07-01 | 2016-07-01 | A kind of epitaxial structure of Distributed Feedback Laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107257083A (en) * | 2017-07-06 | 2017-10-17 | 聊城大学 | A kind of vertical cavity surface emitting laser |
| WO2021212598A1 (en) * | 2020-04-24 | 2021-10-28 | 江苏华兴激光科技有限公司 | 808 nm laser epitaxial wafer and preparation method therefor |
| CN115528537A (en) * | 2022-08-26 | 2022-12-27 | 江苏华兴激光科技有限公司 | Method for manufacturing GaAs-based narrow-linewidth red laser chip |
-
2016
- 2016-07-01 CN CN201620685787.4U patent/CN205752984U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107257083A (en) * | 2017-07-06 | 2017-10-17 | 聊城大学 | A kind of vertical cavity surface emitting laser |
| WO2021212598A1 (en) * | 2020-04-24 | 2021-10-28 | 江苏华兴激光科技有限公司 | 808 nm laser epitaxial wafer and preparation method therefor |
| CN115528537A (en) * | 2022-08-26 | 2022-12-27 | 江苏华兴激光科技有限公司 | Method for manufacturing GaAs-based narrow-linewidth red laser chip |
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| TR01 | Transfer of patent right |
Effective date of registration: 20170216 Address after: 215000 Suzhou Industrial Park, Jiangsu, No. E1107, No. 388, No. Patentee after: SUZHOU EPIHOUSE. CO.,LTD. Address before: 361000 Xiamen Torch Road, Huli District, Fujian, China, No. 11 Patentee before: Shan Zhifa |
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| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: EPIHOUSE OPTOELECTRONIC Co.,Ltd. Assignor: SUZHOU EPIHOUSE. CO.,LTD. Contract record no.: X2020110000021 Denomination of utility model: An epitaxial structure of DFB laser Granted publication date: 20161130 License type: Common License Record date: 20201118 |
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Effective date of registration: 20230321 Address after: 361000 1st, 2nd and 3rd floors, No. 567, tonglong 2nd Road, industrial zone, torch high tech Zone (Xiang'an), Xiamen, Fujian Patentee after: EPIHOUSE OPTOELECTRONIC Co.,Ltd. Address before: Room E1107, 388 Ruoshui Road, Suzhou Industrial Park, Jiangsu Province, 215000 Patentee before: SUZHOU EPIHOUSE. CO.,LTD. |
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