CN106340806A - Manufacturing method for distributed feedback semiconductor laser with wavelength of 650nm - Google Patents
Manufacturing method for distributed feedback semiconductor laser with wavelength of 650nm Download PDFInfo
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- CN106340806A CN106340806A CN201610996866.1A CN201610996866A CN106340806A CN 106340806 A CN106340806 A CN 106340806A CN 201610996866 A CN201610996866 A CN 201610996866A CN 106340806 A CN106340806 A CN 106340806A
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- distributed feedback
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a manufacturing method for a distributed feedback semiconductor laser with the wavelength of 650nm. The method comprises: (1), a primary epitaxial material is obtained on an N-GaAs substrate by using MOCVD epitaxial processing; (2), a grating is manufactured on a p-InGaAsP grating of the primary epitaxial material; (3), cladding layers and a contact layer are formed on a secondary epitaxial unit; and (4) a ridge waveguide laser process is carried out to realize device preparation. Because of utilization of a tensile strain InGaP/AlGaInP active region and a tensile strain InGaP etching stopping layer, the distributed feedback semiconductor laser that has the wavelength of 650nm and has advantages of long service life, low threshold value, and uniform performance is realized.
Description
Technical field
The invention belongs to optoelectronic areas, the preparation method being related to single mode feedback semiconductor laser, it is gaas base
The laser instrument of ingap/algainp active area provides reference.
Background technology
The economy of the mankind and social activities will necessarily discharge a large amount of fine particles (pm 2.5), thus leading to China in Recent Years
Large-scale haze weather in northern area, and winter is even more serious.These air particles have various harmful thin
Particle, noxious material reach tens kinds, include acid, alkali, phenol etc., and dust, pollen, acarid, influenza virus etc., and its content is
Tens times of normal atmospheric water droplet.Compared with mist, haze is bigger to the healthy harm of people.Due to granular tiny in haze
Floating particle thing diameter, typically below 0.01 micron, directly can enter bronchus by respiratory system, or even lung, therefore haze
What impact was maximum is exactly the respiratory system of people, causes breathing problem, or even the disease such as cranial vascular disease, nasal cavity inflammation.2013
Since year, Beijing's pm2.5 hour concentration repeatedly exceedes every cubic metre of 500 micrograms.Therefore must effectively be monitored pm
2.5 numerical value, thus making precautionary measures, and then makes the measure reducing haze weather.
At present air pollution monitoring thing mainly use directly weigh, multiple spot monitoring, the method such as manual sampling.Such biography
System method poor in timeliness, less efficient, bothersome laborious.Carry out the detection of particulate matter based on light scattering method principle, be emerging in recent years
Effective, real-time, the succinct method of testing of the pm 2.5 numerical value monitoring rising.Distributed feedback semiconductor laser is particulate matter laser
The core part of monitoring, 650nm wave band is effective wave band of monitoring.
At present, to emission wavelength, the distributed feedback semiconductor laser of the ingap/algainp active area for 650nm is studied
Less, structure is single, and due to the restriction of band structure, epitaxial material must constrain the work(of laser instrument using the material containing al
Rate and life-span.In general structure, top covering is using the scheme mixing zn so that reative cell has zn residual so that the basis of subsequent epitaxial
Bottom is deteriorated, if the method for cleaning reative cell, consecutive production can be affected.Simultaneously when etching the ridge of laser instrument, have relatively
Few material selects, even if adopting dry etching, the depth of ridge can not control definitely homogeneous, thus result in the inequality of performance
One property.
The present invention adopts the ingap trap material of compressive strain to combine algainp barrier layer and the limiting layer of low al component, to obtain
Low threshold, the performance of high life.Top covering excludes the destruction to reative cell background for the zn using the algaas mixing c.Tensile strain
The design of ingap makes to play the effect of etching stop layer, light will not be produced simultaneously and absorb.
Content of the invention
The invention belongs to optoelectronic areas, the preparation method being related to single mode feedback semiconductor laser, it is gaas base
The laser instrument of ingap/algainp active area provides reference.Content of the invention is as follows:
1. a kind of preparation method of the distributed feedback semiconductor laser for 650nm for wavelength comprises the steps of
(1) epitaxial material is obtained on n-gaas substrate using mocvd extension；
(2) the p-ingaasp grating layer in an epitaxial material makes grating；
(3) secondary epitaxy top covering and contact layer；
(4) carry out the preparation that ridge waveguide laser technique realizes device.
2. wavelength according to claim 1 is the preparation method of the distributed feedback semiconductor laser of 650nm, and it is special
Levy and be, a described epitaxial material once include 200nm～400nm n-gaas cushion (mix si, n=1～3 ×
1018cm-3), 1.2 μm～1.3 μm of n-al0.51in0.49P under-clad layer (mixes si, n=1～2 × 1018cm-3), 60nm～80nm's
al0.35ga0.17in0.48P lower limit layer, ingap/alingap multi-quantum well active region (excitation wavelength is 650nm), 60nm～
The al of 80nm0.35ga0.17in0.48P upper limiting layer, the p-al of 100nm～200nm0.8Gaas layer (mixes c, p=1～2 × 1018cm-3), the p-ingaasp grating layer of 60nm～90nm (mixes zn, p=1～2 × 1018cm-3).
3. wavelength according to claim 1 is the preparation method of the distributed feedback semiconductor laser of 650nm, and it is special
Levy and be, the bragg wavelength of described p-ingaasp grating in 650 ± 2nm,
4. wavelength according to claim 1 is the preparation method of the distributed feedback semiconductor laser of 650nm, and it is special
Levy and be, described secondary epitaxy material is 1.1 μm～1.2 μm p-al0.8ga0.2As top covering (mix c, p=1～2 ×
1018cm-3) and 150nm～200nm p+- gaas contact layer (mixes c, p=1～2 × 1019cm-3).
5. 1.1 μm according to claim 4～1.2 μm p-al0.8ga0.2As top covering is it is characterised in that at this
The ingap etching stop layer having 5nm～10nm at grating layer 50nm～100nm in layer (mixes zn, p=1～2 × 1018cm-3), its wavelength is less than 630nm.
6. wavelength according to claim 1 is the preparation method of the distributed feedback semiconductor laser of 650nm, and it is special
Levy and be, during etching ridge platform in ridge waveguide laser technique, using dry etching to the above 100nm of etching stop layer, then
Corroded to etching stop layer ingap using selective corrosion liquid (corrosion algaas does not corrode ingap).
The invention has the characteristics that
1st, no the ingap trap material of al can obtain the high life with reference to the barrier layer of low al component and limiting layer；
2nd, asymmetric covering be designed with mixing the algaas top covering of c, reduce p-type background；
3rd, the ingap (wavelength is less than 630nm) of tensile strain plays the effect of etching stop layer, light will not be produced simultaneously and inhale
Receive
Brief description
Fig. 1 is epitaxial structure schematic cross-section
Fig. 2 is laser instrument schematic cross-section
Fig. 3 is that laser instrument section light field limits simulation drawing
Specific embodiment
Refer to Fig. 1～Fig. 3, the present invention provides a kind of making of the distributed feedback semiconductor laser that wavelength is 650nm
Method, comprises the following steps:
(1) epitaxial material is obtained, including 200nm～400nm n- on n-gaas substrate 1 using mocvd extension
Gaas cushion 2 (mixes si, n=1～3 × 1018cm-3), 1.2 μm～1.3 μm of n-al0.51in0.49P under-clad layer 3 (mixes si, n=
1～2 × 1018cm-3), the al of 60nm～80nm0.35ga0.17in0.48P lower limit layer 4, ingap/alingap MQW is active
Area 5 (excitation wavelength is 650nm), the al of 60nm～80nm0.35ga0.17in0.48P upper limiting layer 6, the p- of 100nm～200nm
al0.8Gaas layer 7 (mixes c, p=1～2 × 1018cm-3), the p-ingaasp grating layer of 60nm～90nm 8 (mix zn, p=1～2 ×
1018cm-3)；
(2) an epitaxial material p-ingaasp grating layer 8 make grating, its bragg wavelength in 650 ± 2nm,；
(3) secondary epitaxy top covering and contact layer, respectively 1.1 μm～1.2 μm p-al0.8ga0.2As top covering 9 and 11
(mix c, p=1～2 × 1018cm-3) and 150nm～200nm p+- gaas contact layer 12 (mixes c, p=1～2 × 1019cm-3)；
(4) carry out the preparation that ridge waveguide laser technique realizes device, these techniques include photoetching, etching (quarter ridge), sink
Long-pending sio2Dielectric layer 13, opens electrode window through ray, sputters p metal 14, thinning, evaporates n metal 15.
Described 1.1 μm～1.2 μm of p-al0.8ga0.2Between as top covering 9 and 11, distance grating layer 50nm～100nm
The ingap etching stop layer 10 that there is 5nm～10nm at place (mixes zn, p=1～2 × 1018cm-3), its wavelength is less than 630nm.
During etching ridge platform in described ridge waveguide laser technique, more than dry etching to etching stop layer
100nm, then adopts selective corrosion liquid (corrosion algaas does not corrode ingap) to corrode to etching stop layer ingap.
Although the present invention illustrates as above by embodiment, but embodiment is not intended to limit the present invention.Without departing from this
In the case of the spirit and scope of invention, those skilled in the art can make any modifications and variations.The protection model of the present invention
Enclose and only limited as defined by the claims.Any modification within all purports in the present invention and principle, change,
Equivalent etc. all should be considered within protection scope of the present invention.
Claims (6)
1. a kind of preparation method of the distributed feedback semiconductor laser for 650nm for wavelength comprises the steps of
(1) epitaxial material is obtained on n-gaas substrate using mocvd extension；
(2) the p-ingaasp grating layer in an epitaxial material makes grating；
(3) secondary epitaxy top covering and contact layer；
(4) carry out the preparation that ridge waveguide laser technique realizes device.
2. wavelength according to claim 1 is the preparation method of the distributed feedback semiconductor laser of 650nm, and its feature exists
In a described epitaxial material once includes 200nm～400nm n-gaas cushion and (mixes si, n=1～3 × 1018cm-3), 1.2 μm～1.3 μm of n-al0.51in0.49P under-clad layer (mixes si, n=1～2 × 1018cm-3), 60nm～80nm's
al0.35ga0.17in0.48P lower limit layer, ingap/alingap multi-quantum well active region (excitation wavelength is 650nm), 60nm～
The al of 80nm0.35ga0.17in048P upper limiting layer, the p-al of 100nm～200nm0.8Gaas layer (mixes c, p=1～2 × 1018cm-3), the p-ingaasp grating layer of 60nm～90nm (mixes zn, p=1～2 × 1018cm-3).
3. wavelength according to claim 1 is the preparation method of the distributed feedback semiconductor laser of 650nm, and its feature exists
In the bragg wavelength of described p-ingaasp grating is in 650 ± 2nm.
4. wavelength according to claim 1 is the preparation method of the distributed feedback semiconductor laser of 650nm, and its feature exists
In described secondary epitaxy material is 1.1 μm～1.2 μm p-al0.8ga0.2As top covering (mixes c, p=1～2 × 1018cm-3) and
The p of 150nm～200nm+- gaas contact layer (mixes c, p=1～2 × 1019cm-3).
5. 1.1 μm according to claim 4～1.2 μm p-al0.8ga0.2As top covering is it is characterised in that in this layer
The ingap etching stop layer having 5nm～10nm at distance grating layer 50nm～100nm (mixes zn, p=1～2 × 1018cm-3), its
Wavelength is less than 630nm.
6. wavelength according to claim 1 is the preparation method of the distributed feedback semiconductor laser of 650nm, and its feature exists
In, during etching ridge platform in ridge waveguide laser technique, using dry etching to the above 100nm of etching stop layer, then adopting
Selective corrosion liquid (corrosion algaas does not corrode ingap) corrodes to etching stop layer ingap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610996866.1A CN106340806A (en) | 2016-11-14 | 2016-11-14 | Manufacturing method for distributed feedback semiconductor laser with wavelength of 650nm |
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| CN201610996866.1A CN106340806A (en) | 2016-11-14 | 2016-11-14 | Manufacturing method for distributed feedback semiconductor laser with wavelength of 650nm |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289554A (en) * | 2019-06-18 | 2019-09-27 | 威科赛乐微电子股份有限公司 | One kind simplifying extension upside-down mounting VCSEL chip and its manufacturing method |
| CN111755950A (en) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | DFB laser with electrode partially covering ridge |
| CN111755947A (en) * | 2019-03-29 | 2020-10-09 | 潍坊华光光电子有限公司 | Asymmetric structure high-power laser with Bragg reflector and preparation method thereof |
| CN111769437A (en) * | 2020-07-21 | 2020-10-13 | 厦门市三安集成电路有限公司 | Bragg grating, preparation method thereof and distributed feedback laser |
| WO2021212598A1 (en) * | 2020-04-24 | 2021-10-28 | 江苏华兴激光科技有限公司 | 808 nm laser epitaxial wafer and preparation method therefor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111755947A (en) * | 2019-03-29 | 2020-10-09 | 潍坊华光光电子有限公司 | Asymmetric structure high-power laser with Bragg reflector and preparation method thereof |
| CN110289554A (en) * | 2019-06-18 | 2019-09-27 | 威科赛乐微电子股份有限公司 | One kind simplifying extension upside-down mounting VCSEL chip and its manufacturing method |
| WO2021212598A1 (en) * | 2020-04-24 | 2021-10-28 | 江苏华兴激光科技有限公司 | 808 nm laser epitaxial wafer and preparation method therefor |
| CN111755950A (en) * | 2020-06-30 | 2020-10-09 | 中国科学院半导体研究所 | DFB laser with electrode partially covering ridge |
| CN111755950B (en) * | 2020-06-30 | 2024-07-02 | 中国科学院半导体研究所 | DFB laser with electrode part covering ridge |
| CN111769437A (en) * | 2020-07-21 | 2020-10-13 | 厦门市三安集成电路有限公司 | Bragg grating, preparation method thereof and distributed feedback laser |
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Application publication date: 20170118 |