CN111463365A - Manufacturing device and manufacturing method of light emitting element - Google Patents
Manufacturing device and manufacturing method of light emitting element Download PDFInfo
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- CN111463365A CN111463365A CN202010289273.8A CN202010289273A CN111463365A CN 111463365 A CN111463365 A CN 111463365A CN 202010289273 A CN202010289273 A CN 202010289273A CN 111463365 A CN111463365 A CN 111463365A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Engineering & Computer Science (AREA)
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Abstract
The manufacturing apparatus of the present invention is characterized by comprising a main conveying path which is provided with a 1 st transfer machine and a 2 nd transfer machine connected through a 1 st transfer chamber, a sub-conveying path which is provided with a 2 nd transfer chamber connected with the 1 st transfer machine or the 2 nd transfer machine and a conveying chamber connected with the 2 nd transfer chamber and extends in a direction crossing the main conveying path, and a plurality of 1 st processing chambers connected with the conveying chamber, wherein the main conveying path conveys a substrate to be processed in a horizontal state, and one 1 st processing chamber in the plurality of 1 st processing chambers keeps the substrate to be processed in a vertical state during processing.
Description
Technical Field
The present invention relates to a manufacturing apparatus and a manufacturing method for a light-emitting element, and more particularly to a manufacturing apparatus and a manufacturing method for an organic layer and an electrode layer in an organic E L element used for forming a display device.
Background
In recent years, display devices using organic electroluminescent elements (organic E L elements) in display portions have been widely used in various electronic devices such as portable information terminals including smart phones, and organic E L elements have a structure in which organic layers having respective functions are stacked and sandwiched between a pair of electrodes, and are manufactured by sequentially forming organic layers by a vapor deposition method, a coating method, or the like on a substrate on which one electrode is formed, and forming the other electrode by a sputtering method, a coating method, or the like.
As a typical organic layer structure of an organic E L element, a laminated structure of a hole injection layer/a hole transport layer/a light emitting layer/an electron transport layer/an electron injection layer is exemplified, and a manufacturing apparatus for appropriately forming a laminated layer constituting an organic E L element including these layers in sequence has been proposed (for example, see japanese patent application laid-open No. 2004-288463).
Disclosure of Invention
For example, in the manufacturing apparatus described in japanese patent application laid-open No. 2004-288463, the transport chambers to which the plurality of process chambers are connected in series by the transfer chamber, but in the case of adopting such a structure, when the stacked structure is changed or a new layer is added halfway, large-scale modification is required such that a part of the already-arranged apparatus group is divided and rearranged or a new transport chamber is additionally connected, and further, since the respective processes have different processing times, a difference occurs such that the processing capability is high in one of the processes and the processing capability is low in the other process, and in the case of connecting the transport chambers in series (serial connection), the process performed by the processing apparatus having a low processing capability becomes a bottleneck, thereby limiting the entire production amount.
An apparatus for manufacturing a laminated film according to an aspect of the present invention includes: a main conveying path having a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room; a sub-conveyance path that has a 2 nd delivery chamber connected to the 1 st transfer device or the 2 nd transfer device and a conveyance chamber connected to the 2 nd delivery chamber, and that extends in a direction intersecting the main conveyance path; and a plurality of 1 st processing chambers connected to the transfer chamber, wherein the main transfer path transfers the substrate to be processed in a horizontal state, and one 1 st processing chamber among the plurality of 1 st processing chambers holds the substrate to be processed in a vertical state during processing.
An apparatus for manufacturing a laminated film according to another aspect of the present invention includes: a main conveying path having a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room; a 1 st sub-conveyance path which has a 2 nd delivery chamber connected to the 1 st transfer unit and a 1 st conveyance chamber connected to the 2 nd delivery chamber and extends in a direction intersecting the main conveyance path; a 2 nd sub-conveyance path which has a 3 rd transfer chamber connected to the 2 nd transfer device and a 2 nd conveyance chamber connected to the 3 rd transfer chamber and extends in a direction intersecting the main conveyance path; a plurality of 1 st processing chambers connected to the 1 st transfer chamber; and a plurality of 2 nd process chambers connected to the 2 nd transfer chamber, wherein the main transfer path transfers the substrate to be processed in a horizontal state, one 1 st process chamber among the plurality of 1 st process chambers holds the substrate to be processed in a vertical state during the process, and one 2 nd process chamber among the plurality of 2 nd process chambers holds the substrate to be processed in a horizontal state during the process.
A method for manufacturing a laminated film using a manufacturing apparatus according to an aspect of the present invention includes: a main conveying path having a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room; a sub-conveyance path that has a 2 nd delivery chamber connected to the 1 st transfer device or the 2 nd transfer device and a conveyance chamber connected to the 2 nd delivery chamber, and that extends in a direction intersecting the main conveyance path; and a plurality of 1 st processing chambers connected to the transfer chamber, the method for manufacturing a light emitting element includes: preparing a substrate to be processed having a pixel electrode and a bank portion covering an end portion of the pixel electrode on an insulating surface and exposing a part of an upper surface of the pixel electrode, feeding the substrate to be processed to a 1 st transfer machine provided on a main transport path of a manufacturing apparatus, feeding the substrate to be processed from the 1 st transfer machine to a transport chamber via a 2 nd delivery chamber, feeding the substrate to be processed from the transport chamber to a plurality of 1 st process chambers, maintaining the substrate to be processed in a horizontal state, forming a 1 st organic layer on the pixel electrode and the bank portion, returning the substrate to be processed from one 1 st process chamber among the plurality of 1 st process chambers to the transport chamber, feeding the substrate to be processed from the transport chamber to another 1 st process chamber among the plurality of 1 st process chambers, maintaining the substrate to be processed in a vertical state, forming a 2 nd organic layer on a region overlapping the pixel electrode on the 1 st organic layer, the method for manufacturing a light-emitting element includes the steps of returning a substrate to be processed from another 1 st processing chamber among the 1 st processing chambers to the transfer chamber, and returning the substrate to be processed from the transfer chamber to the 1 st transfer device through the 2 nd transfer chamber, the method including: while the substrate to be processed is being carried from the transfer chamber into the other 1 st processing chamber among the plurality of 1 st processing chambers, the substrate to be processed is rotated from a horizontal state to a vertical state.
A method for producing a laminated film using a production apparatus according to another aspect of the present invention includes: a main conveying path having a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room; a 1 st auxiliary conveying path which is provided with a 2 nd delivery chamber connected with the 1 st transfer machine and a 1 st conveying chamber connected with the 2 nd delivery chamber and extends in the direction crossing the main conveying path; a 2 nd sub-conveyance path which has a 3 rd transfer chamber connected to the 2 nd transfer device and a 2 nd conveyance chamber connected to the 3 rd transfer chamber and extends in a direction intersecting the main conveyance path; a plurality of 1 st processing chambers connected to the 1 st transfer chamber; and a plurality of No. 2 processing chambers connected to the No. 2 transfer chamber, wherein the method for manufacturing the light emitting element comprises the steps of: preparing a substrate to be processed having a pixel electrode and a bank portion covering an end portion of the pixel electrode on an insulating surface and exposing a part of an upper surface of the pixel electrode, feeding the substrate to be processed into a 1 st transfer machine provided on a main transport path of a manufacturing apparatus, feeding the substrate to be processed from the 1 st transfer machine into a 1 st transport chamber through a 2 nd transfer chamber, feeding the substrate to be processed from the 1 st transport chamber into one of the 1 st transport chambers, maintaining the substrate to be processed in a horizontal state, forming a 1 st organic layer on the pixel electrode and the bank portion, returning the substrate to be processed from one of the 1 st transport chambers to the 1 st transport chamber, returning the substrate to be processed from the 1 st transport chamber to the 1 st transfer machine through the 2 nd transfer chamber, and feeding the substrate to be processed from the 1 st transfer machine into the 2 nd transfer machine through the 1 st transfer chamber, the method for manufacturing a light emitting element includes the steps of transferring a substrate to be processed from a 2 nd transfer machine to a 2 nd transfer chamber through a 3 rd transfer chamber, transferring the substrate to be processed from the 2 nd transfer chamber to one 2 nd processing chamber among a plurality of 2 nd processing chambers, maintaining the substrate to be processed in a vertical state, forming a 2 nd organic layer on the 1 st organic layer in a region overlapping with the pixel electrode, returning the substrate to be processed from the 2 nd processing chamber among the 2 nd processing chambers to the 2 nd transfer chamber, and returning the substrate to be processed from the 2 nd transfer chamber to the 2 nd transfer machine through the 3 rd transfer chamber, wherein the method further includes the steps of: the substrate to be processed is rotated from a horizontal state to a vertical state while the substrate to be processed is being carried from the 2 nd transfer machine into the plurality of 2 nd processing chambers or while the substrate to be processed is being carried from the 2 nd transfer chamber into one of the plurality of 2 nd processing chambers.
Drawings
Fig. 1 is a diagram showing an apparatus for manufacturing a light-emitting element according to an embodiment of the present invention.
Fig. 2 is a diagram showing an apparatus for manufacturing a light-emitting element according to an embodiment of the present invention.
Fig. 3 is a diagram showing an apparatus for manufacturing a light-emitting element according to an embodiment of the present invention.
Fig. 4 is a diagram showing a configuration example of a conventional manufacturing apparatus for a light-emitting element.
Fig. 5A to 5F are diagrams illustrating steps of forming a light-emitting element.
Fig. 6 is a diagram showing an apparatus for manufacturing a light-emitting element according to an embodiment of the present invention.
Fig. 7 is a diagram showing an apparatus for manufacturing a light-emitting element according to an embodiment of the present invention.
Fig. 8A to 8E are diagrams showing a manufacturing apparatus of a light-emitting element according to an embodiment of the present invention.
Fig. 9A and 9B are diagrams illustrating a vapor deposition method for an organic layer of a light-emitting element.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In order to explain the present invention more clearly, the drawings may schematically show the width, thickness, shape, size relationship and the like of each part than the actual form, but they are merely examples and do not limit the explanation of the present invention unless they are specifically explained. In the present specification and the drawings, the same elements as those already described with respect to the appearing drawings are denoted by the same reference numerals, and detailed description thereof may be omitted as appropriate.
In the present invention, when the term "upper" is used to describe the mode in which another structure is disposed "on" a certain structure, unless otherwise specified, the term "upper" encompasses both the case in which another structure is disposed above in contact with a certain structure and the case in which another structure is disposed above a certain structure with another structure interposed therebetween.
Fig. 1 is a diagram showing a configuration example of a manufacturing apparatus 100 of a light-emitting element according to an embodiment of the present invention. In fig. 1, the main transport path is a portion composed of transfer devices 101 to 103 and transport mechanisms (transfer rooms) 111 to 113, and processing devices a to E are connected to the main transport path in a branch shape from each of the transfer devices 101 to 103 via the transport mechanisms 131 to 135 in a direction intersecting the main transport path. Reference numeral 110 denotes a substrate loading/unloading port, and is connected to a substrate stocker (not shown), for example. The conveying mechanisms 111-113 and 131-135 transfer the processed substrates between adjacent transfer machines or between the transfer machines and the conveying chambers 191-195 of the processing devices A-E. In fig. 1, the main transport path is linear, but the transfer devices 101 to 103 constituting the main transport path in this example may be connected to the transport mechanisms 111 to 113 in a linear manner by one stroke, as long as the main transport path is not particularly limited.
The transfer unit 101 has a plurality of ports, and the transfer mechanisms 111, 112, 131, and 134 are connected via the ports. The transfer unit 101 has a transfer arm 161 and transfers the target substrates to and from the transfer mechanisms 111, 112, 131, and 134. Further, one or more buffer units 162 may be connected to the transfer unit 101. The buffer unit 162 temporarily retracts the target substrate waiting for the loading device. When the processing capabilities of the processing apparatuses a to E are different, the substrates to be processed can be prevented from staying on the main transport path, and the substrates to be processed before and after the transport sequence can be prevented from interfering with each other. In fig. 1, the transfer unit 101 is connected to the 2-chamber buffer unit 162, but the buffer unit 162 may be connected to each transfer unit only by the required number, and for example, there may be an empty port 163.
The processing apparatus a is configured such that a plurality of chambers (processing chambers) 151 for performing respective processes are connected to a transfer chamber 191 having a transfer arm 152. The transfer chamber 191 is connected to each chamber 151 via a port. Each port has a load-lock door 153. The load-lock door 153 has airtightness for making each part of the apparatus vacuum or a specific atmosphere as necessary, and has a load-lock mechanism for isolating a space continuous inside the load-lock door 153 from a space outside the load-lock door 153. In fig. 1, the transfer chamber 191 has 8 ports, and the connection with the transfer mechanism 131 occupies 1 of them, so that the chamber 151 of up to 7 chambers can be connected. The chambers 151 may be connected only by the required number in each step, and for example, the empty ports 154 may be present. The same applies to the other processing apparatuses B to E.
Although the conveying mechanisms 111 to 113, 131 to 135 have a conveyor structure for moving the substrates inside in fig. 1, if the distance between the transfer units or between the transfer unit and the processing apparatus is not so long that the substrates to be processed can be transferred within the operating range of the conveying arm 161, only a mounting table for mounting the substrates to be processed may be provided.
In the manufacturing apparatus of the light emitting element of the present invention, the vacuum state is maintained in the region formed by connecting the transfer machines 101 to 103, the conveying mechanisms 111 to 113 provided in the main conveying path, and the conveying mechanisms 131 to 135 provided in a branch shape. Therefore, even when the substrate to be processed is reciprocated between the plurality of processing apparatuses, the substrate to be processed is not exposed to the atmosphere in the middle of the process.
Fig. 2 shows an example of the processing steps. The arrow simply indicates the route of the substrate to be processed in the manufacturing apparatus 100 of the light-emitting element. The substrate to be processed is transferred from the substrate loading/unloading port 110 to the transfer unit 101 via the transfer mechanism 111. The transfer unit 101 loads the substrate to be processed into the transfer chamber 191 of the processing apparatus a for performing the first processing via the transfer mechanism 131. In the processing apparatus a, the transfer of the target substrates is performed between the transfer chamber 191 and each processing chamber 151, and various processes are performed. When all the steps are completed in the processing apparatus a, the transfer unit 101 receives the substrate to be processed from the conveying mechanism 131 and delivers the substrate to the conveying mechanism 134.
Thereafter, the processing is sequentially performed in the processing apparatus B, C, D, E, and the processed substrates after the completion of the steps in all the processing apparatuses are returned to the substrate loading/unloading port 110 again.
One of the main features of the apparatus for manufacturing a light-emitting element of the present invention is that the processing apparatuses a to E are branched from the main transport path via the transport mechanisms 131 to 135. For example, it is possible to deal with not only sequential processing in the order of the processing apparatuses a → B → C → D → E as shown in fig. 2, but also, for example, even if the order of the processing apparatuses used is changed to a → E → C → D → B or the like due to a change in the laminated structure, without changing the connection of each processing apparatus.
In addition, the steps in the chambers connected to the respective processing apparatuses are not necessarily continuous, and a plurality of processes in the same chamber may be included in different steps. In this case, the substrate to be processed can easily reciprocate the main transport path.
Even if the order of the processing apparatuses to be used becomes complicated, the buffer unit 162 provided in each transfer unit can facilitate the retraction and shifting of the substrates to be processed. The same applies to the case where a plurality of substrates to be processed are loaded into the manufacturing apparatus 100.
The empty port 164 of the transfer unit 102 and the empty port 165 of the transfer unit 103 have room for future expansion. For example, the processing device 170 (see fig. 1) may be newly connected, or the number of steps may be increased by further connecting the conveyance mechanism.
The manufacturing apparatus 100 of the light emitting element of the present invention has flexibility to such expansion. For example, the process performed by the new processing device 170 connected to the empty port 164 may be performed between processes performed by other processing devices. For example, even if it is necessary to add a new processing apparatus F between the processing apparatuses a → B → C → D → E and rearrange the steps to a → F → B → C → D → E, the processing apparatus F may be added only by the empty port 164. The existing facilities such as the other processing devices A to E and the transfer machines 101 to 103 do not need to be transferred.
In addition, the steps performed by the respective processing apparatuses are not limited to all having the same processing time, and it is not uncommon that a certain step requires a longer processing time than other steps. The processing apparatus requiring a long processing time becomes a bottleneck, and the throughput of the entire manufacturing apparatus for the light-emitting element is reduced. In this case, a processing device requiring a long processing time may be added in parallel to the empty port 164. By distributing each of the plurality of substrates to be processed for parallel processing, the buffer units 162 of each unit are used, and thus steps performed by a single processing apparatus can be appropriately connected to steps performed in parallel by a plurality of processing apparatuses.
For example, in the formation of an organic E L element, it is necessary to form each of a plurality of organic layers with high purity in different steps, and the film formation atmosphere is vacuum, reduced pressure, or a specific atmosphere, and therefore a large number of processing chambers are required.
Further, when the layout shape of the apparatus is significantly limited, it is also possible to take a countermeasure of increasing the distance between the transfer devices, the processing apparatuses, or the transfer device and the processing apparatus by lengthening a part of the conveying mechanism. For example, as in the manufacturing apparatus 600 shown in fig. 6, when the processing apparatus A, C includes 1 processing chamber 601 and 602, respectively, and the processing apparatus B, D includes 2 processing chambers 603 and 604, respectively, the floor space of the processing chambers 603 and 604 is naturally increased, which may make it inconvenient to arrange the manufacturing apparatus. In this case, the conveying mechanism 620 is longer than the conveying mechanism 610, so that the degree of freedom in the arrangement of the processing device B, D can be increased.
In fig. 6, the number of the processing chambers 601 and 602 of the processing apparatus A, C is 1 and the number of the processing chambers 603 and 604 of the processing apparatus B, D is 2, but the present invention is not limited thereto, and 1 and 2 processing chambers may be provided in one processing apparatus.
Fig. 3 shows a cross-section X-X' of fig. 1. Parts already described in fig. 1 are denoted by the same reference numerals. In fig. 3, the transport mechanism 111 and the transfer unit 101, which are the locations indicated by 310, correspond to the main transport path, and the transport mechanism 131 and the processing device a, which are the locations indicated by 320, are branched from the main transport path.
The substrate loading/unloading port 110 is provided with a substrate storage cassette 301 for storing substrates to be loaded into the manufacturing apparatus. The transfer arm 302 takes out the substrate to be processed from the substrate storage cassette 301 and transfers the substrate to the transfer mechanism 111. In fig. 3, the conveying mechanism 111 is shown as a two-layer type. This is to achieve efficiency when the substrates to be processed are simultaneously transported to and from the main transport path. As shown in fig. 3, the transport mechanism 111 may be a unidirectional transport type in which one of the upper layer side transfer mechanism and the lower layer side transfer mechanism is in the outward direction and the other is in the return direction, or a bidirectional transport type in which both mechanisms can freely reciprocate. According to this configuration, the plurality of target substrates can be shifted in the main transport path. In fig. 3, two layers of the conveying mechanism 111 are stacked one on top of the other, but the present invention is not limited to this, and the two layers may be arranged in a horizontal direction or an oblique direction.
The transfer unit 101 includes a transfer arm 161, and transfers the target substrates between the transfer mechanism 111 and the transfer mechanism 112 (not shown in fig. 3) in the main transfer path or between the transfer mechanism 111 and the transfer mechanism 131 connected to the transfer chamber 191 of the processing apparatus a in the main transfer path. The transport mechanism 131 is used to transfer the target substrates to the transport chamber 191 of the processing apparatus a, and since there is usually no need to move a plurality of target substrates simultaneously in this path, a single-stage bidirectional transport type may be used, unlike the transport mechanism 111 belonging to the main transport path. Of course, it may be a two-layer type. When the main transport path can be sufficiently close to the processing apparatus a, the transport mechanism 131 may simply be provided with a mounting table for a substrate to be processed.
The processing apparatus a takes out the substrate to be processed from the transfer mechanism 131 by the transfer arm 152 provided in the transfer chamber 191 and puts the substrate into the chamber 151. A plurality of chambers are generally connected to the transfer chamber 191, and the process advances as the substrate to be processed moves back and forth between the transfer chamber 191 and each chamber. When the processing in the processing apparatus a is completed, the substrate to be processed is returned to the conveying mechanism 131 and conveyed to the main conveying path.
The substrate inlet 110, the transfer mechanism 111, the transfer unit 101, the transfer mechanism 131, and the transfer chamber 191 are connected to each other via ports. The transfer chamber 191 is ported to the chamber 151. Each port has load-lock doors 351-357. Some of the processes performed in the manufacturing apparatus 100 for a light-emitting element require vacuum, reduced pressure, or a specific atmosphere, and therefore each load-lock door has sufficient airtightness. In the processing apparatus, the respective chambers can be set to different atmospheres, and only a minimum necessary region is opened when transferring the substrate, thereby more efficiently realizing atmosphere changeover and pressure reduction.
The transport mechanisms 111 and 131 each have a mounting table 303 on which a substrate to be processed is placed and moved, in a manufacturing apparatus of a display device, for example, in the mounting table 303, the substrate is sucked by a vacuum chuck or the like so that the substrate to be processed does not shift during movement or fall off from the mounting table 303, but in a vapor deposition apparatus of an organic E L element or the like, since a transport path is vacuum-held and is not exposed to the atmosphere, the suction by the vacuum chuck is difficult.
Alternatively, the mounting table 303 may have a claw for holding the substrate to be processed so as to grip an end portion of the substrate, and particularly, may hold a portion that does not affect film formation, which is not particularly shown.
Next, a manufacturing process of the organic E L element will be described with reference to fig. 5A to 5F, where fig. 5A to 5F show cross-sectional views of a display region of the display device 500, pixel electrodes 502 and 503 are formed on the insulating surface 501, here, a transistor for controlling each pixel, a wiring for supplying current to a light-emitting element, and the like are formed below the insulating surface 501, bank portions (banks) 504 are formed so as to cover the ends of the pixel electrodes 502 and 503, a region exposed from the bank portion 504 on the surfaces of the pixel electrodes 502 and 503 becomes a light-emitting region of the organic E L element, and photolithography and etching are performed until the steps of forming the pixel electrodes 502 and 503 and the bank portions 504, and the substrate in the state shown in fig. 5A corresponds to the substrate to be processed described above.
Here, a description will be given of a structure in a case where the pixel electrodes 502 and 503 are ANODEs (ANODEs) of organic E L elements, in a case where the pixel electrodes 502 and 503 are ANODEs, it is preferable to use a material having a large work function, and in fig. 5A, a structure in which light is extracted to the lower side is referred to as a bottom emission type, and in this case, it is preferable that the pixel electrodes 502 and 503 are formed of a transparent conductive material such as ITO, IZO, or ZnO.
As shown in fig. 5B, a hole transport layer 505 is first formed on a substrate to be processed, and a triarylamine derivative, a distyrene amine derivative, or the like is preferable as a hole transporting material, and α -NPD, TPD, TPAC, Spiro-TPD, PDA, m-MTDATA, or the like can be cited as a representative compound.
Next, as shown in fig. 5C, light-emitting layers 506 and 507 are formed on the hole transport layer 505. In fig. 5C, a light-emitting layer 506 is formed in a region overlapping with the pixel electrode 502, and a light-emitting layer 507 is formed in a region overlapping with the pixel electrode 503. This is to form light-emitting layers containing different materials individually in accordance with the emission color of each pixel. In fig. 5C, a mask 550 having an opening in a region stacked on the pixel electrode 502 is disposed parallel to the substrate to form the light-emitting layer 506. Thus, the light-emitting layer 506 is not formed in a region overlapping with the pixel electrode 503. When forming the light-emitting layer 507 on the pixel electrode 503, the light-emitting layer 507 is formed only in a region overlapping the pixel electrode 503 using a mask 550 having openings at different positions. As shown in fig. 5C, when the light emitting layers are individually formed according to the emission colors, the above-described steps are repeated by using masks of the number of emission colors. In another method different from this, for example, a material for obtaining white light emission may be used, and a continuous light-emitting layer may be formed from the pixel electrode 502 to the pixel electrode 503 in the same manner as the hole transport layer 505. In this case, the emission color is controlled using a color filter or a color conversion layer which is additionally provided.
As a material of the light emitting layers 506 and 507, a metal complex such as an aluminum complex or a beryllium complex is typical. The light-emitting layers 506 and 507 may be formed by co-evaporation of a small amount of dopant using the above-described material as a main material. As a dopant material in this case, an iridium complex, perylene, rubrene, coumarin, or the like is typified. The materials are selected in accordance with the desired emission colors of the light-emitting layers 506 and 507.
Next, as shown in fig. 5D, an electron transport layer 508 is formed on the hole transport layer 505 and the light emitting layers 506, 507. As the electron transporting material, a triazole derivative, an oxadiazole derivative, or the like is preferable, and BND, PBD, TAZ, OXD, or the like can be given as a representative compound. In fig. 5D, the electron transport layer 508 is provided as a continuous film so as to cover the hole transport layer 505 and the light emitting layers 506 and 507, but may be formed separately on each of the pixel electrodes 502 and 503.
Next, as shown in fig. 5E, a counter electrode 509 is formed on the electron transport layer 508, the counter electrode 509 is a CATHODE (cathodee) of the organic E L element, and typically, MgAg, Al, or the like is used, and since these are metal materials, they are usually formed as a reflective electrode, in the case of the bottom emission method, the counter electrode 509 may be formed as a reflective electrode, and in the case of the top emission method, since the counter electrode 509 is required to transmit the emitted light, the former metal materials are formed in a thin film of about ten nm to several tens of nm and have a certain degree of transmissivity, and as the counter electrode 509, a transparent conductive material such as ITO, IZO, ZnO, or the like may be used.
Since the deterioration of the organic E L elements is likely to progress due to moisture in the atmosphere, it is preferable to avoid exposure to the atmosphere during each film forming step and the conveyance of the substrate to be processed therebetween, and therefore, a structure in which the substrate to be processed is moved while maintaining a vacuum or a specific gas atmosphere within the manufacturing apparatus 100 is preferably employed.
Further, since the deterioration due to moisture in the atmosphere described above progresses even after the formation of the organic E L element is completed, a sealing film may be formed as shown in FIG. 5F, and here, the sealing film is formed as a 3-layer structure of the silicon nitride film 510, the organic resin film 511, and the silicon nitride film 512. the silicon nitride film 510 is formed on the lowermost layer of the sealing film, whereby high moisture resistance can be provided, and therefore, the subsequent formation of the organic resin film 511 and the like can also be performed under the atmosphere.
In the case of forming the light emitting layer described with reference to fig. 5C, each light emitting layer is formed at a desired position by disposing the mask 550 on the light emitting layer forming surface, but the mask is increased in size with the increase in size of the substrate to be processed, and the proportion of the opening area of the mask is increased with the increase in the definition of the display device, so that the rigidity of the mask 550 itself is lowered. As a result, the substrate itself and the mask 550 are deflected by gravity, the interval between the two is changed, or a positional shift due to the deflection occurs. To avoid this, the substrate to be processed and the mask 550 may be rotated by 90 degrees, and the light-emitting layer may be formed while the substrate to be processed and the mask 550 are held in a vertically upright state. In this case, a mechanism for rotating the substrate to be processed is provided between the main transport path shown in fig. 1 and the chamber 151.
Fig. 9A and 9B are schematic diagrams illustrating a step of forming a light-emitting layer on a target substrate. Fig. 9A shows an example in which the light-emitting layer is formed while the target substrate 910 and the mask 920 are held horizontally, that is, while the surfaces thereof face in a direction parallel to the gravitational force 930. Specifically, the following is shown: an organic material is evaporated from a vapor deposition source 901 provided below a target substrate 910, and a light-emitting layer is formed on a lower surface of the target substrate 910, which is a side facing the vapor deposition source 901. Fig. 9A shows a configuration in which a plurality of vapor deposition sources 901 are arranged in a line, that is, a so-called line source type, and the vapor deposition sources 901 move in the direction of an arrow 905, but the present invention is not limited thereto. Fig. 5C schematically shows a mode in which the light emitting layer 506 is formed on the upper surface of the target substrate 910, but actually the vapor deposition source 901, the target substrate 910, and the mask 920 are in a positional relationship as shown in fig. 9A in view of the direction in which the organic material evaporates from the vapor deposition source 901. In this case, the gravity 930 acts in parallel to the film thickness direction of the substrate 910 and the mask 920, and therefore both tend to be deflected. In the case where the process substrate 910 and the mask 920 are flexed, a case where the mask 920 is in contact with the surface of the process substrate 910 is conceivable. A plurality of organic materials are formed on the surface of the processing substrate 910 by vapor deposition, and if the mask 920 is accidentally brought into contact with the organic materials, the layers of the organic materials are broken, resulting in defects. To avoid such a problem, the following measures may be taken: for example, convex spacers are formed on the banks 504 shown in fig. 5A, so that the mask 920 does not contact the surface of the handle substrate 910 even when the mask 920 is deflected.
Fig. 9B shows an example in which the light-emitting layer is formed while the target substrate 910 is held vertically, that is, with its surface facing in a direction perpendicular to gravity, and specifically shows the following manner: an evaporation source 951 is provided to laterally evaporate an organic material, and a light-emitting layer 911 is formed on the side of the target substrate 910 opposite to the evaporation source. Fig. 9B shows a structure in which a plurality of vapor deposition sources 951 are arranged in a line, that is, a so-called line source type, and the vapor deposition sources 951 move in the direction of an arrow 955. In this case, the gravity 930 acts perpendicularly to the film thickness direction of the substrate 910 and the mask 920, and therefore, the deflection is not easily generated. Therefore, there is no risk that the mask 920 is flexed to contact the processing substrate 910, and thus there is no need to form convex spacers on the banks 504 shown in fig. 5A as described above.
Fig. 8A to 8E show examples of a mechanism for rotating the target substrate, which is a different mode of the sub-conveyance path 320 in the cross-sectional view of the manufacturing apparatus shown in fig. 3.
In contrast to the mode of the manufacturing apparatus shown in fig. 3 in which the substrate to be processed is conveyed and processed in a horizontal state, the mode of the manufacturing apparatus shown in fig. 8A to 8E in which the substrate to be processed is processed in the chamber 151 in a vertical state. Therefore, the transfer arm 152 is provided with a mechanism for rotating the substrate to be processed by 90 °.
Fig. 8A shows a state in which the substrate 801 to be processed is still on the mounting table 303 in the conveying mechanism 131 of the sub-conveying path. From this state, as shown in fig. 8B, the load-lock door 355 is opened, and the transfer arm 152 receives the substrate 801 to be processed which is standing on the mounting table 303 and carries the substrate to be processed into the transfer chamber 191 side of the processing apparatus. Thereafter, the load-lock door 355 is closed, and the transport chamber 191 and the sub-transport path are spatially blocked (fig. 8C).
Next, as shown in fig. 8D, the load-lock door 356 connected to the chamber 151 is opened, and the transfer arm 152 transfers the substrate 801 to the chamber 151 side. The chamber 151 performs processing while a substrate to be processed is in a vertical state. The transfer arm 152 has a rotation axis in the middle of the arm. While the substrate 801 to be processed is being carried into the chamber 151, the arm is rotated, whereby the substrate 801 to be processed is turned from a horizontal state to a vertical state. The mounting table 802 has claws for holding an end portion of the substrate to be processed, and receives and holds the substrate 801 rotated by the transfer arm 152.
Thereafter, as shown in fig. 8E, the load-lock 356 is closed and the chamber 151 is spatially blocked for processing.
In fig. 8A to 8E, the transport arm 152 provided in the transport chamber 191 has a rotation axis, but is not limited thereto, and a transport arm (not shown in fig. 8A to 8E) provided on the main transport path side may have a rotation axis. In this case, the mounting table 303 of the conveying mechanism 131 provided on the sub-conveying path side also has a mechanism capable of holding the substrate to be processed in a vertical state.
The advantage of providing a rotary shaft to the transfer arm 152 of the transfer chamber 191 is that the holding form of the substrate to be processed can be arbitrarily selected in each of the plurality of chambers connected to the transfer chamber 191. For example, in one chamber connected to the transfer chamber 191, the substrate to be processed is processed in a horizontal state, and in the other chamber connected to the transfer chamber 191, the substrate to be processed is processed in a vertical state.
Fig. 4 shows a conventional apparatus for manufacturing a light-emitting element, and processing apparatuses a to E are connected in series between a substrate inlet 401 and a substrate outlet 402 via transfer units 421 to 424 and transfer mechanisms 411 and 412. The target substrates introduced from the substrate inlet 401 sequentially pass through B, C, D, E from the processing apparatus a.
In such a configuration, even when the processing order is changed, for example, when the processing of the processing device D is performed immediately after the processing of the processing device a without performing the processing of the processing device B immediately after the processing of the processing device a, the processing device B, C needs to be interposed therebetween. That is, since the processing apparatuses are disposed on the substrate movement line, the substrates in the processing apparatuses B and C cannot be processed until the processing of the processing apparatus D is started after the processing of the processing apparatus a is finished. When a processing apparatus F is newly added between the processing apparatuses a and B, at least the processing apparatus a, the transfer mechanism 411, and the substrate inlet 401 need to be provided. Therefore, in the conventional manufacturing apparatus for a light-emitting element as shown in fig. 4, it is not easy to change the apparatus configuration in accordance with the change and addition of the steps. Further, when a specific processing device in the middle of the process becomes a bottleneck as described above, it is difficult to realize a method of increasing the entire throughput by arranging the parts in parallel in the conventional configuration.
In the case where the apparatuses are connected in series in the apparatus for manufacturing a light-emitting element shown in fig. 4, the substrate inlet 401 and the substrate outlet 402 are provided separately. On the other hand, in the apparatus for manufacturing a light-emitting element of the present invention shown in fig. 1, since the substrate loading/unloading port 110 loads and unloads the substrate to be processed, there is also an advantage that the substrate to be processed can be easily transferred to and from another apparatus or a stocker. The configuration in which the inlet and the outlet are shared in this manner is referred to as an inter-block (combination) system. In the manufacturing apparatus 100, the transport mechanisms 131 to 135 perform loading and unloading between the respective processing apparatuses a to E in addition to the substrate loading/unloading port 110, and therefore, the respective processing apparatuses also adopt a reciprocating system. Further, since each processing apparatus adopts a reciprocating system, the processing apparatus can be arranged in a branch shape with respect to the main transport path, and the connection and layout between the apparatuses are simple and the degree of freedom is high. Of course, depending on the environment in which the processing apparatus is disposed, it may be preferable to provide the substrate input port and the substrate output port separately, and therefore the configuration may be appropriately selected.
In fig. 1, the main transport path may be formed in a ring shape by connecting the front end of the empty port 180 of the transfer unit 103, which is not the side to which the transport unit 113 is connected, to the substrate loading/unloading port 110 on the main transport path formed by the substrate loading/unloading port 110, the transfer units 101 to 103, and the transport units 111 to 113. In this case, although the manufacturing apparatus is not strictly reciprocating, the substrate to be processed traveling on the main transport path returns to the substrate loading/unloading port 110 and is collected after one round, which is equivalent to reciprocating.
Fig. 7 shows a specific example of a manufacturing apparatus 700 of a light emitting element, in which a substrate loading/unloading port 110 is connected to a transport mechanism 731 and a substrate to be processed is transferred to and from the transport mechanism 731, an annular path formed by transfer devices 701 to 708 and transport mechanisms 731 to 738 is a main transport path, and a processing device can be connected to a port other than a port for connecting a transport mechanism constituting the main transport path via a sub transport path in each transfer device, processing devices B to H, J to L shown by broken lines can be connected to the transfer devices 701 to 708 on the main transport path in addition to the processing device a shown by a solid line in fig. 7, and 1 or 2 processing devices can be connected to the transfer devices 701 to 708 on the main transport path in the example of fig. 7, and 3 or more processing devices can be connected as long as the arrangement space permits.
Further, when looking at the number of chambers connected to each processing apparatus, according to the conventional configuration shown in fig. 4, it is necessary to make the substrate input surface for receiving the substrate from the processing apparatus that has performed the previous step and the substrate discharge surface for discharging the substrate to the processing apparatus that performs the next step independent from each other in each processing apparatus. On the other hand, in the configuration of the present invention shown in fig. 1, since the processing devices are arranged in a branch shape from the main transport path, the substrate input surface and the substrate discharge surface may be the same surface. That is, there is an advantage that 1 processing apparatus has more chambers than one processing apparatus can be connected.
From the above description, it can be said that the advantages of the structure of the manufacturing apparatus of the light-emitting element of the present invention are significant.
Note that the following sets forth technical features of the apparatus and method for manufacturing a light-emitting element of the present invention.
An apparatus for manufacturing a light emitting element according to an aspect of the present invention includes: a main conveying path having a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room; a sub-conveyance path that has a 2 nd delivery chamber connected to the 1 st transfer device or the 2 nd transfer device and a conveyance chamber connected to the 2 nd delivery chamber, and that extends in a direction intersecting the main conveyance path; and a plurality of 1 st processing chambers connected to the transfer chamber, wherein the main transfer path transfers the substrate to be processed in a horizontal state, and one 1 st processing chamber among the plurality of 1 st processing chambers holds the substrate to be processed in a vertical state during processing.
Further, another 1 st processing chamber among the plurality of 1 st processing chambers is characterized in that the substrate to be processed is kept horizontal during processing.
An apparatus for manufacturing a light emitting element according to an aspect of the present invention includes: a main conveying path having a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room; a 1 st sub-conveyance path which has a 2 nd delivery chamber connected to the 1 st transfer device and a 1 st conveyance chamber connected to the 2 nd delivery chamber and extends in a direction intersecting the main conveyance path; a 2 nd sub-conveyance path which has a 3 rd transfer chamber connected to the 2 nd transfer unit and a 2 nd conveyance chamber connected to the 3 rd transfer chamber and extends in a direction intersecting the main conveyance path; a plurality of 1 st processing chambers connected to the 1 st transfer chamber; and a plurality of 2 nd process chambers connected to the 2 nd transfer chamber, wherein the main transfer path transfers the substrate to be processed in a horizontal state, one 1 st process chamber among the plurality of 1 st process chambers holds the substrate to be processed in a vertical state during processing, and one 2 nd process chamber among the plurality of 2 nd process chambers holds the substrate to be processed in a horizontal state during processing.
Further, the 1 st transfer unit and the 2 nd transfer unit each include: a 1 st port for connecting the 1 st interface chamber; a 2 nd port for connecting the 2 nd interface chamber; and a 3 rd port for connecting a buffer portion for storing the target substrate, wherein the 1 st transfer chamber includes: a 4 th port for connecting the 2 nd interface chamber; and a 5 th port for connecting one 1 st process chamber among the 1 st process chambers.
Further, the 1 st transfer unit and the 2 nd transfer unit each include: a 1 st port for connecting the 1 st interface chamber; a 2 nd port for connecting the 2 nd interface chamber; and a 3 rd port for connecting a buffer portion for storing the target substrate, wherein each of the 1 st transfer chamber and the 2 nd transfer chamber includes: a 4 th port for connecting the 2 nd interface chamber; and a 5 th port for connecting one 1 st process chamber among the 1 st process chambers or one 2 nd process chamber among the 2 nd process chambers.
Further, the first transfer unit 1, the second transfer unit 2, and one of the first process chambers 1 may have an arm for transporting the substrate to be processed, and the arm included in the first transfer unit 1, the second transfer unit 2, and the one of the first process chambers 1 may have a rotation shaft for rotating the substrate to be processed from a horizontal state to a vertical state or from a vertical state to a horizontal state.
Further, the first transfer unit, the second transfer unit, one 1 st process chamber of the plurality of 1 st process chambers, and one 2 nd process chamber of the plurality of 2 nd process chambers each have an arm for conveying the substrate to be processed, and the arm included in each of the first transfer unit, the second transfer unit, one 1 st process chamber of the plurality of 1 st process chambers, and one 2 nd process chamber of the plurality of 2 nd process chambers has a rotation shaft for rotating the substrate to be processed from a horizontal state to a vertical state or from a vertical state to a horizontal state.
Further, the plurality of 1 st processing chambers are radially arranged with the 1 st transfer chamber as a center.
Further, the plurality of 1 st processing chambers are radially arranged around the 1 st transfer chamber, and the plurality of 2 nd processing chambers are radially arranged around the 2 nd transfer chamber.
And, the 1 st port to the 5 th port are each air-tight.
The manufacturing apparatus is characterized in that: the 1 st port of the 1 st transfer unit or the 2 nd transfer unit located at the end of the main transport path further has a substrate loading/unloading port, and loading of the target substrates before processing and unloading of the processed target substrates are performed through the substrate loading/unloading port.
The manufacturing apparatus is characterized in that: the first port 1 of the first transfer unit or the second transfer unit located at one end of the main transport path further includes a substrate input port, the first port 1 of the first transfer unit or the second transfer unit located at the other end of the main transport path further includes a substrate output port, the input of the target substrates before processing is performed through the substrate input port, and the output of the processed substrates is performed through the substrate output port.
The manufacturing apparatus is characterized in that: the first port 1 of the first transfer unit or the second transfer unit on the main transport path further includes a substrate input/output port, the main transport path includes an annular path passing through the first transfer unit, the first transfer chamber, the second transfer unit, and the substrate input/output port, and the input of the processed substrate before processing and the output of the processed substrate after processing are performed through the substrate input/output port.
Further, the main transport path is formed in a shape of one stroke.
Further, at least two delivery rooms 1 are provided side by side.
One embodiment of the present invention is a method for manufacturing a laminated film using a manufacturing apparatus including: a main conveying path having a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room; a sub-conveyance path that has a 2 nd delivery chamber connected to the 1 st transfer machine or the 2 nd transfer machine and a conveyance chamber connected to the 2 nd delivery chamber, and that extends in a direction intersecting the main conveyance path; and a plurality of 1 st processing chambers connected to the transfer chamber, wherein the method for manufacturing a laminated film includes: preparing a substrate to be processed having a pixel electrode and a bank portion covering an end portion of the pixel electrode and exposing a part of an upper surface of the pixel electrode on an insulating surface, feeding the substrate to be processed into the first transfer machine provided on the main transport path of the manufacturing apparatus, feeding the substrate to be processed from the first transfer machine into the transport chamber via the 2 nd delivery chamber, feeding the substrate to be processed from the transport chamber into one 1 st process chamber among the 1 st process chambers, holding the substrate in a horizontal state, forming a 1 st organic layer on the pixel electrode and the bank portion, returning the substrate to be processed from one 1 st process chamber among the 1 st process chambers to the transport chamber, and feeding the substrate to be processed from the transport chamber into the other 1 st process chamber among the 1 st process chambers, the method for manufacturing a semiconductor device includes the steps of forming a 2 nd organic layer on a region of the 1 st organic layer overlapping the pixel electrode while keeping the substrate to be processed in a vertical state, returning the substrate to be processed from another 1 st processing chamber among the plurality of 1 st processing chambers to the transfer chamber, and returning the substrate to be processed from the transfer chamber to the 1 st transfer machine via the 2 nd transfer chamber, and includes: and rotating the substrate from the horizontal state to the vertical state while the substrate to be processed is transferred from the transfer chamber to another 1 st processing chamber among the plurality of 1 st processing chambers.
Another aspect of the present invention is a method for manufacturing a laminated film using a manufacturing apparatus including: a main conveying path having a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room; a 1 st sub-conveyance path which has a 2 nd delivery chamber connected to the 1 st transfer device and a 1 st conveyance chamber connected to the 2 nd delivery chamber and extends in a direction intersecting the main conveyance path; a 2 nd sub-conveyance path which has a 3 rd delivery chamber connected to the 2 nd transfer unit and a 2 nd conveyance chamber connected to the 3 rd delivery chamber and extends in a direction intersecting the main conveyance path; a plurality of 1 st processing chambers connected to the 1 st transfer chamber; and a plurality of 2 nd processing chambers connected to the 2 nd transfer chamber, wherein the method for manufacturing a laminated film includes: preparing a substrate to be processed having a pixel electrode and a bank portion covering an end portion of the pixel electrode and exposing a part of an upper surface of the pixel electrode on an insulating surface, feeding the substrate to be processed into the first transfer unit provided on the main transport path of the manufacturing apparatus, feeding the substrate to be processed from the first transfer unit into the first transport chamber through the 2 nd delivery chamber, feeding the substrate to be processed from the 1 st transport chamber into one of the 1 st transport chambers, holding the substrate in a horizontal state, forming a 1 st organic layer on the pixel electrode and the bank portion, returning the substrate to be processed from one of the 1 st transport chambers to the 1 st transport chamber, and returning the substrate to be processed from the 1 st transport chamber through the 2 nd delivery chamber to the 1 st transfer unit, the method includes the steps of transferring the substrate to be processed from the 1 st transfer machine to the 2 nd transfer machine through the 1 st transfer chamber, transferring the substrate to be processed from the 2 nd transfer machine to the 2 nd transfer chamber through the 3 rd transfer chamber, transferring the substrate to be processed from the 2 nd transfer chamber to one of the 2 nd process chambers, holding the substrate to be processed in a vertical state, forming a 2 nd organic layer in a region overlapping with the pixel electrode on the 1 st organic layer, returning the substrate to be processed from the one of the 2 nd process chambers to the 2 nd transfer chamber, and returning the substrate to be processed from the 2 nd transfer chamber to the 2 nd transfer machine through the 3 rd transfer chamber, the method including: and rotating the substrate to be processed from the horizontal state to the vertical state while the substrate to be processed is being carried from the 2 nd transfer machine into the 2 nd transfer chamber or while the substrate to be processed is being carried from the 2 nd transfer chamber into one of the plurality of 2 nd processing chambers.
Further, the 1 st organic layer includes a hole transport layer or an electron transport layer of the light emitting element.
Further, the 2 nd organic layer includes a light-emitting layer of the light-emitting element.
Description of the reference numerals
100. 700: a manufacturing apparatus of a light emitting element;
101 to 103, 421 to 424, 701 to 708: a transfer machine;
111-113, 131-135, 411, 412, 610, 620, 731-738: a conveying mechanism;
191 to 195: a delivery chamber;
110: a substrate input/output port;
140: a pin;
151: a chamber;
152. 161, 302: a transfer arm;
153. 351-357: loading an interlocking door;
154. 163 to 165: an empty port;
162: a buffer section;
301: a substrate storage cassette;
303: a mounting table;
401: a substrate inlet;
402: a substrate take-out port;
500: a display device;
501: an insulating surface;
502. 503: a pixel electrode;
504: a bank portion;
505: a hole transport layer;
506. 507: a light emitting layer;
508: an electron transport layer;
509: a counter electrode;
510. 512: a silicon nitride film;
511: an organic resin film;
550: a mask;
601-604: a processing chamber;
910: a substrate to be processed;
920: a mask;
901. 951: and (4) an evaporation source.
Claims (10)
1. A method for manufacturing a light-emitting element, comprising the steps of:
preparing a substrate to be processed, the substrate to be processed including: an insulating surface; a pixel electrode formed on the insulating surface; and a bank portion covering an end portion of the pixel electrode and exposing a portion of an upper surface of the pixel electrode,
forming a 1 st organic layer on the pixel electrode and the bank in a state where the substrate to be processed is held horizontally in a 1 st processing chamber,
transferring the substrate to be processed to a transfer chamber connected to the 1 st process chamber,
transferring the substrate to be processed to the 2 nd processing chamber connected to the transfer chamber in a vertical state,
in the 2 nd processing chamber, the substrate to be processed is held in a vertical state, and a 2 nd organic layer is formed on the 1 st organic layer in a region overlapping with at least a part of the upper surface of the exposed pixel electrode.
2. The method for manufacturing a light-emitting element according to claim 1, further comprising the steps of:
rotating the substrate to be processed from a vertical state to a horizontal state after the 2 nd organic layer is formed,
and forming a 3 rd organic layer on the 1 st organic layer and the 2 nd organic layer while maintaining the processed substrate in a horizontal state.
3. The method of manufacturing a light-emitting element according to claim 1, wherein:
the 1 st organic layer and the 2 nd organic layer are formed in different process chambers, respectively.
4. The method of manufacturing a light-emitting element according to claim 2, wherein:
the 1 st to 3 rd organic layers are formed in different process chambers, respectively.
5. A method for manufacturing a light-emitting element using an apparatus for manufacturing a light-emitting element, the apparatus comprising:
a main conveying path which has a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room and extends in a 1 st direction;
a sub-conveyance path that has a 2 nd delivery chamber connected to the 1 st transfer device or the 2 nd transfer device and a conveyance chamber connected to the 2 nd delivery chamber, and that extends in a 2 nd direction that intersects the 1 st direction; and
a plurality of No. 1 process chambers connected to the transfer chamber,
the method for manufacturing a light-emitting element is characterized by comprising the steps of:
preparing a substrate to be processed, the substrate to be processed including: an insulating surface; a pixel electrode formed on the insulating surface; and a bank portion covering an end portion of the pixel electrode and exposing a portion of an upper surface of the pixel electrode,
feeding the substrate to be processed into one of the 1 st process chambers,
forming a 1 st organic layer on the pixel electrode and the bank portion while keeping the target substrate horizontal,
delivering the substrate to be processed from one of the 1 st process chambers to the transfer chamber,
transferring the substrate to be processed to another 1 st process chamber among the plurality of 1 st process chambers connected to the transfer chamber in a vertical state,
forming a 2 nd organic layer on the 1 st organic layer in a region overlapping with at least a part of an upper surface of the exposed pixel electrode, while keeping the substrate to be processed in a vertical state,
the step of rotating the substrate to be processed from a horizontal state to a vertical state is performed after the formation of the 1 st organic layer and before the formation of the 2 nd organic layer.
6. The method for manufacturing a light-emitting element according to claim 5, further comprising the steps of:
after the 2 nd organic layer is formed, the substrate to be processed is sent out from the 1 st processing chamber of the other 1 st processing chambers,
transferring the processed substrate into a further 1 st processing chamber of the plurality of 1 st processing chambers,
rotating the substrate to be processed from a vertical state to a horizontal state,
forming a 3 rd organic layer on the 1 st organic layer and the 2 nd organic layer while maintaining the substrate to be processed in a horizontal state,
the step of rotating the substrate to be processed from a vertical state to a horizontal state is performed after the 2 nd organic layer is formed and before the 3 rd organic layer is formed.
7. A method for manufacturing a light-emitting element using an apparatus for manufacturing a light-emitting element, the apparatus comprising:
a main conveying path which has a 1 st transfer machine and a 2 nd transfer machine connected via a 1 st transfer room and extends in a 1 st direction;
a 1 st sub-conveyance path including a 2 nd delivery chamber connected to the 1 st transfer unit or the 2 nd transfer unit and a 1 st conveyance chamber connected to the 2 nd delivery chamber, and extending in a 2 nd direction intersecting the 1 st direction;
a 2 nd sub-conveyance path which has a 3 rd delivery chamber connected to the 1 st transfer device or the 2 nd transfer device and a 2 nd conveyance chamber connected to the 3 rd delivery chamber, and which extends in the 2 nd direction or a 3 rd direction intersecting the 1 st direction or the 2 nd direction;
a plurality of 1 st processing chambers connected to the 1 st transfer chamber; and
a 2 nd processing chamber connected to the 2 nd transfer chamber,
the method for manufacturing a light-emitting element is characterized by comprising the steps of:
preparing a substrate to be processed, the substrate to be processed including: an insulating surface; a pixel electrode formed on the insulating surface; and a bank portion covering an end portion of the pixel electrode and exposing a portion of an upper surface of the pixel electrode,
feeding the substrate to be processed into one of the 1 st process chambers,
forming a 1 st organic layer on the pixel electrode and the bank portion while keeping the target substrate horizontal,
delivering the substrate to be processed from one of the 1 st process chambers to the 1 st transfer chamber,
the processed substrate is vertically transferred from the 1 st conveying chamber to the 2 nd processing chamber,
forming a 2 nd organic layer on the 1 st organic layer in a region overlapping with at least a part of an upper surface of the exposed pixel electrode, while keeping the substrate to be processed in a vertical state,
the step of rotating the substrate to be processed from a horizontal state to a vertical state is performed after the formation of the 1 st organic layer and before the formation of the 2 nd organic layer.
8. The method for manufacturing a light-emitting element according to claim 7, further comprising the steps of:
after the 2 nd organic layer is formed, the substrate to be processed is sent out from one of the 1 st processing chambers among the plurality of 1 st processing chambers,
feeding the substrate to be processed into another 1 st processing chamber among the plurality of 1 st processing chambers,
rotating the substrate to be processed from a vertical state to a horizontal state,
forming a 3 rd organic layer on the 1 st organic layer and the 2 nd organic layer while maintaining the substrate to be processed in a horizontal state,
the step of rotating the substrate to be processed from a vertical state to a horizontal state is performed after the 2 nd organic layer is formed and before the 3 rd organic layer is formed.
9. The method for manufacturing a light-emitting element according to any one of claims 1, 3, 5, and 7, wherein:
the 1 st organic layer includes any one of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer,
the 2 nd organic layer includes a light emitting layer.
10. The method for manufacturing a light-emitting element according to any one of claims 2, 4, 6, and 8, wherein:
the 1 st and 3 rd organic layers respectively include any one of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer,
the 2 nd organic layer includes a light emitting layer.
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| CN202010289273.8A CN111463365B (en) | 2016-08-04 | 2017-08-04 | Apparatus and method for manufacturing light-emitting element |
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| JP2016153361A JP6830772B2 (en) | 2016-08-04 | 2016-08-04 | Laminated film manufacturing equipment and laminated film manufacturing method |
| JP2016-153361 | 2016-08-04 | ||
| CN201710662741.XA CN107689429A (en) | 2016-08-04 | 2017-08-04 | The manufacture device and manufacture method of light-emitting component |
| CN202010289273.8A CN111463365B (en) | 2016-08-04 | 2017-08-04 | Apparatus and method for manufacturing light-emitting element |
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| CN201710662741.XA Pending CN107689429A (en) | 2016-08-04 | 2017-08-04 | The manufacture device and manufacture method of light-emitting component |
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| US (3) | US10164218B2 (en) |
| JP (1) | JP6830772B2 (en) |
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| JP6830772B2 (en) * | 2016-08-04 | 2021-02-17 | 株式会社ジャパンディスプレイ | Laminated film manufacturing equipment and laminated film manufacturing method |
| KR102260368B1 (en) * | 2018-03-09 | 2021-06-02 | 어플라이드 머티어리얼스, 인코포레이티드 | Vacuum processing system and method of operation of vacuum processing system |
| KR20200002242A (en) * | 2018-06-29 | 2020-01-08 | 캐논 톡키 가부시키가이샤 | Film forming apparatus, manufacturing apparatus of organic device, and manufacturing method of organic device |
| JP7240980B2 (en) * | 2019-07-29 | 2023-03-16 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE CONVEYING METHOD |
| TW202147503A (en) * | 2020-05-12 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Semiconductor processing system |
| JPWO2022137022A1 (en) * | 2020-12-25 | 2022-06-30 | ||
| JPWO2023285913A1 (en) * | 2021-07-16 | 2023-01-19 |
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Also Published As
| Publication number | Publication date |
|---|---|
| US10367174B2 (en) | 2019-07-30 |
| TWI671918B (en) | 2019-09-11 |
| KR20190022594A (en) | 2019-03-06 |
| KR20180016253A (en) | 2018-02-14 |
| US20190305259A1 (en) | 2019-10-03 |
| US20180040856A1 (en) | 2018-02-08 |
| TW201806178A (en) | 2018-02-16 |
| KR102039090B1 (en) | 2019-11-01 |
| US10164218B2 (en) | 2018-12-25 |
| JP2018022619A (en) | 2018-02-08 |
| CN111463365B (en) | 2023-05-26 |
| US20190051867A1 (en) | 2019-02-14 |
| CN107689429A (en) | 2018-02-13 |
| JP6830772B2 (en) | 2021-02-17 |
| KR101953268B1 (en) | 2019-02-28 |
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