CN111403401B - 存储结构及其制备方法 - Google Patents
存储结构及其制备方法 Download PDFInfo
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- CN111403401B CN111403401B CN202010135271.3A CN202010135271A CN111403401B CN 111403401 B CN111403401 B CN 111403401B CN 202010135271 A CN202010135271 A CN 202010135271A CN 111403401 B CN111403401 B CN 111403401B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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CN111403401A CN111403401A (zh) | 2020-07-10 |
CN111403401B true CN111403401B (zh) | 2021-05-07 |
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Families Citing this family (2)
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CN111403408B (zh) * | 2020-03-23 | 2023-06-30 | 长江存储科技有限责任公司 | 一种半导体器件制作方法和用该方法制成的半导体器件 |
CN112951841B (zh) * | 2021-03-23 | 2022-02-11 | 长江存储科技有限责任公司 | 三维存储器及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109712977A (zh) * | 2019-01-15 | 2019-05-03 | 长江存储科技有限责任公司 | 三维存储器件及其制备方法 |
CN109755252A (zh) * | 2019-01-17 | 2019-05-14 | 长江存储科技有限责任公司 | 一种存储器件及其制造方法 |
CN109860196A (zh) * | 2019-02-14 | 2019-06-07 | 长江存储科技有限责任公司 | 3d nand存储器的形成方法 |
CN109887924A (zh) * | 2019-02-14 | 2019-06-14 | 长江存储科技有限责任公司 | 3d nand存储器的形成方法 |
CN109904169A (zh) * | 2019-02-14 | 2019-06-18 | 长江存储科技有限责任公司 | 3d nand存储器的形成方法 |
CN110062958A (zh) * | 2019-03-04 | 2019-07-26 | 长江存储科技有限责任公司 | 用于形成三维存储器件的方法 |
CN110112134A (zh) * | 2019-06-17 | 2019-08-09 | 长江存储科技有限责任公司 | 3d nand存储器及其形成方法 |
CN110246843A (zh) * | 2019-06-27 | 2019-09-17 | 长江存储科技有限责任公司 | 一种3d nand存储器件 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109314118B (zh) * | 2018-08-21 | 2019-11-08 | 长江存储科技有限责任公司 | 具有贯穿阵列触点的三维存储器件及其形成方法 |
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- 2020-03-02 CN CN202010135271.3A patent/CN111403401B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109712977A (zh) * | 2019-01-15 | 2019-05-03 | 长江存储科技有限责任公司 | 三维存储器件及其制备方法 |
CN109755252A (zh) * | 2019-01-17 | 2019-05-14 | 长江存储科技有限责任公司 | 一种存储器件及其制造方法 |
CN109860196A (zh) * | 2019-02-14 | 2019-06-07 | 长江存储科技有限责任公司 | 3d nand存储器的形成方法 |
CN109887924A (zh) * | 2019-02-14 | 2019-06-14 | 长江存储科技有限责任公司 | 3d nand存储器的形成方法 |
CN109904169A (zh) * | 2019-02-14 | 2019-06-18 | 长江存储科技有限责任公司 | 3d nand存储器的形成方法 |
CN110062958A (zh) * | 2019-03-04 | 2019-07-26 | 长江存储科技有限责任公司 | 用于形成三维存储器件的方法 |
CN110112134A (zh) * | 2019-06-17 | 2019-08-09 | 长江存储科技有限责任公司 | 3d nand存储器及其形成方法 |
CN110246843A (zh) * | 2019-06-27 | 2019-09-17 | 长江存储科技有限责任公司 | 一种3d nand存储器件 |
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Inventor after: Xu Wei Inventor after: Yang Xingmei Inventor after: Wang Jianlu Inventor after: Wu Jijun Inventor after: Huang Pan Inventor after: Zhou Wenbin Inventor after: Huo Zongliang Inventor before: Xu Wei Inventor before: Yang Xingmei Inventor before: Wang Jianlu Inventor before: Wu Jijun Inventor before: Huang Pan Inventor before: Zhou Wenbin |