CN111403278A - Method for forming mandrel pattern - Google Patents
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- CN111403278A CN111403278A CN201911204018.2A CN201911204018A CN111403278A CN 111403278 A CN111403278 A CN 111403278A CN 201911204018 A CN201911204018 A CN 201911204018A CN 111403278 A CN111403278 A CN 111403278A
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- 238000000034 method Methods 0.000 title claims abstract description 104
- 230000007704 transition Effects 0.000 claims abstract description 92
- 238000005530 etching Methods 0.000 claims abstract description 83
- 230000008569 process Effects 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000004528 spin coating Methods 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 230000003471 anti-radiation Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000059 patterning Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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Abstract
The invention provides a method for forming a mandrel graph, which comprises the steps of providing a substrate, and sequentially forming a mandrel graph layer, a transition layer and a graphical spin-on dielectric layer above the substrate, wherein the hardness of the transition layer is greater than that of the spin-on dielectric layer; taking the patterned spin-coating dielectric layer as a mask, and etching the transition layer to form a patterned transition layer; and removing the patterned spin-coating dielectric layer, and etching the mandrel pattern layer by taking the patterned transition layer as a mask to form a mandrel pattern. By adding the transition layer between the mandrel graph layer and the graphical spin-on dielectric layer, the film structure in the mandrel graph etching process is changed, the thickness of the organic dielectric layer in the graphical spin-on dielectric layer can be reduced, and the problem that the thickness of the mask layer is insufficient in the etching process of the mandrel graph layer is solved.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a method for forming a mandrel pattern.
Background
As device dimensions decrease, critical dimensions in semiconductor manufacturing continue to decrease, even beyond the limits of the photolithographic process. Under such conditions, in order to obtain a structure capable of satisfying the critical dimension requirements, a Self-aligned Double imaging (SADP) technique needs to be employed. The process first forms a mandrel (Core) pattern, forms side walls on two sides of the mandrel pattern, and then defines the size of the subsequent pattern by the size of the side walls.
In a mandrel pattern etching process, a spin-on dielectric layer is widely used, and the spin-on dielectric layer comprises an organic dielectric layer (OD L) and a silicon-containing anti-reflection layer (Si-ARC). however, because the organic dielectric layer is made of a soft material, the organic dielectric layer is easy to collapse under the bombardment action of plasma in the mandrel pattern (Core) etching process, so that the problem of word line bridging fault or damage in the subsequent process is caused.
Disclosure of Invention
The invention aims to provide a method for forming a mandrel pattern, which is used for avoiding the problem of patterning failure in a mandrel pattern etching process.
In order to solve the above technical problem, the present invention provides a method for forming a mandrel pattern, including:
providing a substrate, and sequentially forming a mandrel graph layer, a transition layer and a graphical spin-on dielectric layer above the substrate, wherein the hardness of the transition layer is greater than that of the spin-on dielectric layer;
taking the patterned spin-coating dielectric layer as a mask, and etching the transition layer to form a patterned transition layer;
and removing the spin-coating dielectric layer, and etching the mandrel pattern layer by taking the patterned transition layer as a mask to form a mandrel pattern.
Optionally, in the method for forming the mandrel pattern, a material of the mandrel pattern layer includes at least one of silicon oxide, amorphous silicon, polycrystalline silicon, and monocrystalline silicon.
Optionally, in the forming method of the mandrel pattern, the forming method of the patterned spin-on dielectric layer includes:
after the transition layer is formed on the mandrel graph layer, sequentially covering an organic dielectric layer, a silicon-containing anti-reflection layer and a photoresist layer on the transition layer through a spin coating process, wherein the organic dielectric layer and the silicon-containing anti-reflection layer jointly form a spin coating dielectric layer;
photoetching the photoresist layer through a photoetching process to form a patterned photoresist layer;
and etching the silicon-containing anti-radiation layer by taking the patterned photoresist layer as a mask, and etching the organic dielectric layer to the surface of the transition layer by taking the patterned photoresist layer as a mask layer to form the patterned spin-on dielectric layer.
Optionally, in the method for forming a mandrel pattern, a thickness of the transition layer is proportional to a thickness of the mandrel pattern layer.
Optionally, in the method for forming a mandrel pattern, a thickness of the transition layer is inversely proportional to an etching selection ratio of the transition layer to the mandrel pattern layer when the mandrel pattern layer is etched.
Optionally, in the method for forming the mandrel pattern, before etching the mandrel pattern layer by using the patterned transition layer as a mask, an ashing process is further used to remove the remaining patterned spin-on dielectric layer on the top of the transition layer.
Optionally, in the method for forming a mandrel pattern, after forming the mandrel pattern, the method further includes: and removing the patterned transition layer.
Optionally, in the method for forming the mandrel pattern, after etching the mandrel pattern layer and before removing the patterned transition layer, the patterned transition layer is used as a mask, and the shape of the mandrel pattern is corrected until the process requirement is met.
In summary, the present invention provides a method for forming a mandrel pattern, which includes providing a substrate, and sequentially forming a mandrel pattern layer, a transition layer and a patterned spin-on dielectric layer on the substrate, wherein the hardness of the transition layer is greater than that of the spin-on dielectric layer; taking the patterned spin-coating dielectric layer as a mask, and etching the transition layer to form a patterned transition layer; and removing the spin-coating dielectric layer, and then etching the mandrel pattern layer by taking the patterned transition layer as a mask to form a mandrel pattern. The transition layer with relatively high hardness is added between the mandrel graph layer and the spin-coating dielectric layer, so that the film layer structure in the mandrel graph etching process is changed, the organic dielectric layer can be removed after the transition layer is etched, and then the transition layer with relatively high hardness is used as a mask layer to etch the mandrel graph layer on the lower layer, so that under the condition that the finally formed mandrel graph structure is not changed, the thickness of the organic dielectric layer is reduced, the problem of patterning failure caused by collapse of the organic dielectric layer is reduced, a larger process window is provided for the subsequent etching process, the process problems of word line bridging faults and damage are solved, and meanwhile, the problem that the mask layer is not enough in thickness during etching of the mandrel graph layer is solved.
Drawings
FIGS. 1-7 are schematic views of a semiconductor structure at various steps in a self-aligned dual imaging process;
FIGS. 8-13 are schematic views of a semiconductor structure at various steps in a method of forming a mandrel pattern;
fig. 14a to 14d are process diagrams showing failure of patterning of a mandrel pattern layer in a mandrel pattern forming method;
FIG. 15a is a cut-away view of a collapsed organic dielectric layer in a mandrel pattern formation process;
FIG. 15b is a cut-away view of a mandrel pattern layer failing to be patterned in a mandrel pattern forming method;
FIGS. 16-23 are schematic views of semiconductor structures at various steps in a method for forming a mandrel pattern in accordance with an embodiment of the present invention;
in fig. 1 to 15 b:
01-a patterned photoresist layer, 02-a silicon-containing anti-reflection layer, 03-an organic dielectric layer, 04-a mandrel pattern layer, 05-a semiconductor material layer, 06-a first oxide layer, 07-a silicon substrate, 08-a sidewall, 09-a second patterned photoresist layer, 0201-a patterned silicon-containing anti-reflection layer, 0301-a patterned organic dielectric layer, 0401-a patterned mandrel pattern layer, 0402-a modified patterned mandrel pattern layer, 0501-a patterned semiconductor material layer;
in fig. 16 to 23:
10-a patterned photoresist layer, 20-a silicon-containing anti-reflection layer, 30-an organic dielectric layer, 40-a mandrel pattern layer, 50-a substrate, 60-a transition layer, 201-a patterned silicon-containing anti-reflection layer, 301-a patterned organic dielectric layer, 401-a patterned mandrel pattern layer, 402-a modified patterned mandrel pattern layer, 601-a patterned transition layer.
Detailed Description
The method for forming the mandrel pattern according to the present invention will be described in further detail with reference to the accompanying drawings and specific examples. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for convenience and clarity in aiding the description of the invention.
As device dimensions decrease, critical dimensions in semiconductor manufacturing continue to decrease, even beyond the limits of the photolithographic process. Under such conditions, in order to obtain structures capable of meeting critical dimension requirements, a self-aligned dual imaging technique needs to be employed. The technology firstly forms a mandrel graph, side walls are formed on two sides of the mandrel, and then the size of a subsequent graph is defined through the size of the side walls. As shown in fig. 1 to 7, the self-aligned dual imaging process includes:
first, a semiconductor structure is provided, as shown in fig. 1, the semiconductor structure includes a substrate, and a mandrel pattern layer 04, a spin-on dielectric layer, and a photoresist layer sequentially formed on the substrate, where the substrate may include a silicon substrate 07, a first oxide layer 06, and a semi-conductive material layer 05 located thereon, and the semi-conductive material layer 05 may sequentially include a floating gate polysilicon layer, an ONO layer (silicon oxide layer-silicon nitride layer-silicon oxide layer), a control gate polysilicon layer, a transition layer, a second oxide layer, and an amorphous silicon layer from bottom to top. The spin-on dielectric layer includes an organic dielectric layer 03 and a silicon-containing anti-reflective layer (Si-ARC)02 thereon. The material of the mandrel pattern layer 04 may be at least one of silicon oxide, amorphous silicon, polycrystalline silicon or monocrystalline silicon, and silicon oxide is preferably used in the case where the semiconductor material layer 05 is an amorphous silicon layer on top of the amorphous silicon layer.
The photoresist layer is then patterned by a photolithography process to form a patterned photoresist layer 01, wherein the patterning of the photoresist layer is set according to process requirements, and generally only the remaining photoresist material is in the storage cell region.
Using the patterned photoresist layer 01 as a mask, performing spin-on dielectric layer etching, i.e., etching the silicon-containing anti-reflection layer 02 and the organic dielectric layer 03 thereunder to finally form a patterned organic dielectric layer 0301, and using the patterned organic dielectric layer 0301 as a mask to perform etching on the mandrel pattern layer 04 to form a patterned mandrel pattern layer 0401, i.e., forming a mandrel pattern (see fig. 2). Due to the limitation of the photoetching process, the critical dimension of the formed mandrel pattern is large, and the critical dimension of the mandrel pattern needs to be reduced through correction. Namely, after the ashing process is carried out on the patterned organic dielectric layer 0301 film layer, the size of the mandrel graph is corrected by adopting a wet etching method, so that the mandrel graph meets the process requirement. A schematic structural view of the modified patterned mandrel graphics layer 0402 is shown in fig. 3.
A sidewall structure is deposited around the modified patterned mandrel pattern layer 0402, and a sidewall 08 as shown in fig. 4 is formed by etching the sidewall structure. Finally, the patterned mandrel pattern layer is directly removed, and a final target pattern is formed by photolithography and further etching (see fig. 5 to 7), that is, a photoresist layer is formed on the sidewall 08 and the semiconductor material layer 05, and then a second patterned photoresist layer 09 is formed by photolithography. Generally, the step is to form a target pattern by forming a patterned semiconductor material layer 0501 only in the non-storage cell region by etching.
In the self-aligned dual imaging process, the etching result of the mandrel pattern layer has a great influence on the whole process. For example, a failure in patterning during etching may cause a word line bridging failure or damage after the whole process is completed. Therefore, the mandrel pattern forming process has high requirements on the etching process. The method for forming the mandrel pattern as shown in fig. 8 to 13 includes:
firstly, a substrate 05 is provided, a mandrel pattern layer 04, an organic dielectric layer 03, a silicon-containing anti-reflection layer 02 and a photoresist layer are sequentially formed on the substrate, and the photoresist layer is subjected to photolithography through a photolithography process to form a patterned photoresist layer 01, see fig. 8.
Etching the silicon-containing anti-reflection layer (Si-ARC)02 using the patterned photoresist layer 01 as a mask to form a patterned silicon-containing anti-reflection layer 0201 (see fig. 9), then etching the organic dielectric layer 03 using the patterned silicon-containing anti-reflection layer 0201 as a mask to form a patterned organic dielectric layer 0301 (see fig. 10), and finally etching the underlying mandrel pattern layer 04 using the patterned organic dielectric layer 0301 as a mask to form a patterned mandrel pattern layer 0401, i.e., a mandrel pattern (see fig. 11-13).
The etching of the mandrel pattern layer 04 is generally further divided into three steps: through etching, main etching and over etching. Wherein the through etch may be used to remove polymer formed on the surface of mandrel pattern layer 04 during the previous etch, while the main etch is primarily to remove most of the unwanted etch material to form patterned mandrel pattern layer 0401 (see fig. 12). The over-etching is mainly used for correcting the morphology of the mandrel pattern to obtain a size meeting the process requirements, i.e., obtaining a corrected patterned mandrel pattern layer 0402, see fig. 13.
In order to ensure that the mandrel pattern layer 04 can be well protected in the above processes, the organic dielectric layer 03 with a sufficient thickness above the mandrel pattern layer 04 needs to be used as a barrier layer. However, the thicker organic dielectric layer 03 is prone to collapse under the bombardment of plasma due to its own softness and smaller critical dimension of the pattern, as shown in fig. 14a to 14d and the slice patterns 15a and 15 b. The collapse phenomenon of the organic dielectric layer occurs in the main etching process, so that the problem of failure of patterning of the silicon oxide layer after etching occurs. While reducing the thickness of the organic dielectric layer helps to solve this problem, it may be problematic that the organic dielectric layer does not protect the mandrel pattern layer sufficiently during etching.
In order to solve the problems, the invention provides a mandrel graph forming method, which improves the film structure in the mandrel graph forming process by adding a transition layer between an organic dielectric layer and a mandrel graph layer, fully utilizes the etching selection ratio, avoids the situation that the organic dielectric layer collapses because the organic dielectric layer is thicker, and simultaneously avoids the problem that the lower film layer is not sufficiently protected by the organic dielectric layer because the organic dielectric layer is thinned.
As shown in fig. 16 to 23, the method for forming a mandrel pattern includes:
providing a substrate 50, and sequentially forming a mandrel graph layer 40, a transition layer 60 and a patterned spin-on dielectric layer above the substrate 50;
taking the patterned spin-on dielectric layer as a mask, and etching the transition layer 60 to form a patterned transition layer 601;
and removing the spin-on dielectric layer, and etching the mandrel pattern layer 40 by using the patterned transition layer 601 as a mask to form a mandrel pattern.
First, a substrate 50 is provided, and a mandrel pattern layer 40, a transition layer 60, and a patterned spin-on dielectric layer are sequentially formed over the substrate. Wherein the substrate 50 may be a conventional silicon substrate or other substrate comprising a layer of semiconducting material, such as a substrate comprising a layer of semiconducting material comprising amorphous silicon, and the material of the mandrel pattern layer 40 may comprise at least one of silicon oxide, amorphous silicon, polycrystalline silicon, and monocrystalline silicon, preferably silicon oxide herein.
The patterned spin-on dielectric layer is formed by etching the spin-on dielectric layer, and the specific process comprises the following steps:
firstly, after the transition layer is formed on the mandrel graph layer, sequentially covering an organic dielectric layer 30, a silicon-containing anti-reflection layer 20 and a photoresist layer on the transition layer by a spin coating process, wherein the organic dielectric layer 30 and the silicon-containing anti-reflection layer 20 jointly form a spin coating dielectric layer;
performing photolithography on the photoresist layer by a photolithography process to form a patterned photoresist layer 10 (see fig. 16);
and etching the silicon-containing anti-radiation layer 20 by taking the patterned photoresist layer 10 as a mask, and then etching the organic dielectric layer 30 to the surface of the transition layer 60 by taking the patterned photoresist layer as a mask layer to form the patterned spin-on dielectric layer. That is, the patterned photoresist layer 10 is used as a mask, the silicon-containing anti-reflection layer 20 is etched first, and the silicon-containing anti-reflection layer 20 is completely opened to form a patterned silicon-containing anti-reflection layer 201, as shown in fig. 17. Then, the organic dielectric layer 30 is etched using the patterned silicon-containing anti-reflection layer 201 as a mask to form a patterned organic dielectric layer 301, and the etching is stopped on the surface of the transition layer 60. Wherein the etching is dry etching, and the etching process has a very high selectivity ratio for the patterned silicon-containing anti-reflection layer 201, so that the patterned silicon-containing anti-reflection layer 201 remains after the organic dielectric layer 30 is etched, as shown in fig. 18.
After the patterned organic dielectric layer 301 is formed, the patterned organic dielectric layer 301 is used as a mask to perform etching of the transition layer 60, so as to form a patterned transition layer 601, and the patterned silicon-containing anti-reflection layer 201 on top of the patterned organic dielectric layer 301 also needs to be completely etched away during the etching process, as shown in fig. 19. The hardness of the transition layer 60 is greater than that of the spin-on dielectric layer, more specifically, the hardness of the transition layer 60 is greater than that of the organic dielectric layer 30, and the transition layer 60 is preferably silicon nitride. The etching of the transition layer 60 is dry etching.
The transition layer 60 is formed between the organic dielectric layer 30 and the mandrel pattern layer 40 by atomic layer deposition or chemical vapor deposition, and the thickness of the transition layer 60 is determined according to the thickness of the mandrel pattern layer 40 and the etching selection ratio of the transition layer to the mandrel pattern layer during etching of the mandrel pattern layer 40. The thickness of the transition layer 60 is proportional to the thickness of the mandrel pattern layer 40 and inversely proportional to the etch selectivity of the transition layer relative to the mandrel pattern layer when etching the mandrel pattern layer 40. The etching selection ratio of the transition layer 60 to the mandrel pattern layer 40 is the etching rate ratio of the transition layer 60 to the mandrel pattern layer 40. In the subsequent etching process, the patterned transition layer 601 is used as a mask layer to etch the mandrel graph layer 40, and the transition layer 60 and the mandrel graph layer 40 can obtain a high etching selection ratio, so that the thin transition layer 60 can provide sufficient protection in the subsequent etching step of the mandrel graph layer 40 to obtain a good graph, and the thickness of the transition layer 60 is thin, so that the thickness of the adopted organic dielectric layer 30 can be greatly reduced, and the situation that the organic dielectric layer 30 collapses in the etching process of the transition layer 60 is avoided.
After the transition layer 60 is etched, a patterned transition layer 601 is formed, and then an ashing process is performed in the etching chamber to remove the remaining patterned organic dielectric layer 301 on top of the patterned transition layer 601, as shown in fig. 20. The ashing process is a high-temperature oxygen introduction process, and the temperature is more than 50 ℃.
Etching of mandrel pattern layer 40 is performed using patterned transition layer 601 as a mask, eventually stopping the etching process on the underlying etch stop layer, i.e., on substrate 50, resulting in patterned mandrel pattern layer 401, as shown in fig. 21. Then, with the patterned transition layer 601 as a mask, the morphology of the mandrel pattern is corrected until the mandrel pattern meets the process requirements, and the correction method may be overetching, that is, the corrected patterned mandrel pattern layer 402 is formed by the overetching method, as shown in fig. 22. It is understood that how to implement the above etching is easily known by those skilled in the art based on the common general knowledge in the field and the disclosure of the present application, and the description is omitted here.
Finally, the residual patterned transition layer 601 at the top of the corrected patterned mandrel pattern layer 402 is removed, so that the structure identical to that of the original process can be obtained. The removing method is preferably a wet etching process, wherein an etching reagent adopted in the wet etching process is preferably a reagent with high etching selectivity ratio of the transition layer relative to the mandrel pattern layer, such as phosphoric acid solution. After removing the remaining transition layer on top of the modified patterned mandrel pattern layer 402, the final mandrel pattern is shown in fig. 23. The etching solution with higher etching selectivity of the transition layer and the mandrel pattern layer can be provided in the wet etching process, so that the residual silicon nitride can be completely removed under the condition of hardly damaging the mandrel pattern.
The invention provides a method for forming a mandrel pattern. And adding a transition layer between the organic dielectric layer and the mandrel graph layer, and etching the mandrel graph layer by utilizing the higher selection ratio which can be obtained by the transition layer relative to the mandrel graph layer, thereby obtaining the graph meeting the process requirement. The organic dielectric layer only needs to provide enough protection in the transition layer etching, that is, after the transition layer etching is completed, the organic dielectric layer can be removed. The forming method of the mandrel graph fully utilizes the higher etching selection ratio of the mandrel graph layer relative to the transition layer in the etching process and the higher selection ratio of the transition layer relative to the mandrel graph layer in the wet etching process, reduces the thickness of the organic dielectric layer in the mandrel graph etching process under the condition of not changing the final structure of the mandrel graph, further fully weakens the problem of patterning failure caused by collapse of the organic dielectric layer in the mandrel graph etching process, provides a larger process window for the subsequent process, and solves the process problems of word line bridging failure and damage.
Finally, it should be noted that the above-mentioned embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. That is, all equivalent changes and modifications made according to the content of the claims of the present invention should be within the technical scope of the present invention.
Claims (8)
1. A method of forming a mandrel pattern, comprising:
providing a substrate, and sequentially forming a mandrel graph layer, a transition layer and a graphical spin-on dielectric layer above the substrate, wherein the hardness of the transition layer is greater than that of the spin-on dielectric layer;
taking the patterned spin-coating dielectric layer as a mask, and etching the transition layer to form a patterned transition layer;
and removing the patterned spin-coating dielectric layer, and etching the mandrel pattern layer by taking the patterned transition layer as a mask to form a mandrel pattern.
2. The method of forming a mandrel pattern according to claim 1, wherein the material of the mandrel pattern layer comprises at least one of silicon oxide, amorphous silicon, polycrystalline silicon, and single crystal silicon.
3. The method of forming a mandrel pattern as claimed in claim 1 wherein said method of forming a patterned spin-on dielectric layer comprises:
after the transition layer is formed on the mandrel graph layer, sequentially covering an organic dielectric layer, a silicon-containing anti-reflection layer and a photoresist layer on the transition layer through a spin coating process, wherein the organic dielectric layer and the silicon-containing anti-reflection layer jointly form a spin coating dielectric layer;
photoetching the photoresist layer through a photoetching process to form a patterned photoresist layer;
and etching the silicon-containing anti-radiation layer by taking the patterned photoresist layer as a mask, and etching the organic dielectric layer to the surface of the transition layer by taking the patterned photoresist layer as a mask layer to form the patterned spin-on dielectric layer.
4. The method of forming a mandrel pattern according to claim 1 wherein the thickness of said transition layer is proportional to the thickness of said mandrel pattern layer.
5. The method of claim 1, wherein a thickness of the transition layer is inversely proportional to an etching selection ratio of the transition layer with respect to the mandrel pattern layer when etching the mandrel pattern layer.
6. The method for forming a mandrel pattern according to claim 1, wherein before etching the mandrel pattern layer using the patterned transition layer as a mask, further comprising removing the patterned spin-on dielectric layer remaining on top of the transition layer by using an ashing process.
7. The method of forming a mandrel pattern according to claim 1, further comprising, after forming the mandrel pattern: and removing the patterned transition layer.
8. The method according to claim 7, wherein after the etching of the mandrel pattern layer and before the removal of the patterned transition layer, the mandrel pattern is corrected in morphology until a process requirement is satisfied by using the patterned transition layer as a mask.
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Citations (9)
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