CN111379019A - A prevent sheltering from temperature measuring device for crystal growth - Google Patents
A prevent sheltering from temperature measuring device for crystal growth Download PDFInfo
- Publication number
- CN111379019A CN111379019A CN202010317440.5A CN202010317440A CN111379019A CN 111379019 A CN111379019 A CN 111379019A CN 202010317440 A CN202010317440 A CN 202010317440A CN 111379019 A CN111379019 A CN 111379019A
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- China
- Prior art keywords
- temperature measuring
- passage
- air inlet
- crucible
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 238000009529 body temperature measurement Methods 0.000 abstract description 20
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention discloses a shielding-proof temperature measuring device for crystal growth, belongs to the technical field of crucible temperature control, and aims to solve the problems that the surface of a temperature measuring window on a traditional crucible temperature measuring structure is easily shielded, temperature measurement is influenced, and crystal growth quality is influenced. The crucible cover is arranged on the crucible, the temperature measuring flange is communicated with the inside of the crucible through the guide cylinder, the temperature measuring flange is internally provided with a temperature measuring passage, the top of the temperature measuring passage is provided with a reflector, the reflector is arranged in an inclined manner at 45 degrees, a temperature measuring hole is arranged in the horizontal direction opposite to the reflector, two sides of the temperature measuring passage are respectively communicated with the air inlet passage and the air outlet passage through the air inlet guide passage and the air outlet guide passage, and the air inlet passage and the air outlet passage are respectively communicated with the air inlet and the air outlet at two sides. The anti-shielding temperature measuring device for crystal growth improves the air inlet path, optimizes the flow field in the furnace body and ensures that the temperature measurement is more accurate.
Description
Technical Field
The invention relates to a temperature measuring device, in particular to an anti-shielding temperature measuring device for crystal growth, and belongs to the technical field of crucible temperature control.
Background
In the process of growing aluminum nitride or silicon carbide crystals by using a PVT method, the equipment temperature is generally over 2000 ℃, and under the high temperature, a contact type temperature measurement part is difficult to bear and only optical temperature measurement can be relied on. The commonly used temperature measurement method is to open a hole at the top end of the device, use a glass or quartz observation window, and receive the transmitted light through an infrared thermometer to measure the temperature. However, in the working process of the existing crystal growth furnace, because the internal temperature is too high, the used heat insulation material is very easy to volatilize and dust, deposits are carried out on the surface of the temperature measurement window with relatively low temperature, the temperature measurement window is shielded, the accuracy of temperature measurement is influenced, the temperature control is further influenced, and the grown crystal has quality defects and causes loss.
Disclosure of Invention
The invention aims to provide a shielding-proof temperature measuring device for crystal growth, which solves the problems that the surface of a temperature measuring window on the traditional crucible temperature measuring structure is easy to be shielded, the temperature measurement is influenced, and the crystal growth quality is influenced
An anti-shielding temperature measuring device for crystal growth comprises a crucible, a crucible cover, a guide cylinder, a temperature measuring flange and a reflector;
the crucible cover is arranged on the crucible, the temperature measuring flange is communicated with the inside of the crucible through the guide cylinder, the temperature measuring flange is internally provided with a temperature measuring passage, the top of the temperature measuring passage is provided with a reflector, the reflector is arranged in an inclined manner at 45 degrees, a temperature measuring hole is arranged in the horizontal direction opposite to the reflector, two sides of the temperature measuring passage are respectively communicated with the air inlet passage and the air outlet passage through the air inlet guide passage and the air outlet guide passage, and the air inlet passage and the air outlet passage are respectively communicated with the air inlet and the air outlet at two sides.
Preferably: the air inlet guide passage is obliquely arranged at an angle of 45 degrees, and the axis of the air inlet guide passage is vertical to the mirror surface of the reflector.
Compared with the existing product, the invention has the following effects:
the top end of the temperature measuring window is provided with a reflector inclined at an angle of 45 degrees, light is horizontally led out for temperature measurement, the inclined design is different from the traditional horizontal temperature measuring window, and the effect of deposition prevention can be achieved;
gas enters from the flange edge, passes through the air inlet guide passage, and sweeps the reflector while air is introduced, so that impurities are prevented from being deposited on the surface of the reflector, and then the gas is discharged through a path on the other side and is taken away. A guide cylinder is arranged between the flange plate and the crucible cover, so that volatile impurities in the furnace body are prevented from entering the gas circuit, and meanwhile, the function of light guiding is achieved, and temperature measurement and focusing are facilitated;
the problem of shielding of the temperature measurement window can be effectively avoided, accurate temperature control is always performed in the crystal growth process, the defects of inaccurate temperature measurement and poor repeatability are overcome, the air inlet path is improved, and the flow field in the furnace body is optimized.
Drawings
FIG. 1 is a schematic structural diagram of an anti-blocking temperature measuring device for crystal growth according to the present invention.
In the figure: 1-crucible, 2-crucible cover, 3-guide cylinder, 4-temperature measuring flange, 5-air inlet, 6-air inlet channel, 7-air inlet guide channel, 8-temperature measuring channel, 9-air outlet channel, 10-air outlet guide channel, 11-air outlet, 12-reflector and 13-temperature measuring hole.
Detailed Description
Preferred embodiments of the present invention are explained in detail below with reference to the accompanying drawings.
As shown in figure 1, the anti-shielding temperature measuring device for crystal growth comprises a crucible 1, a crucible cover 2, a guide cylinder 3, a temperature measuring flange 4 and a reflecting mirror 12;
the crucible cover 2 is arranged on the crucible 1, the temperature measuring flange 4 is communicated with the inside of the crucible 1 through the guide cylinder 3, the temperature measuring flange 4 is internally provided with a temperature measuring passage 8, the top of the temperature measuring passage 8 is provided with a reflector 12, the reflector 12 is arranged in an inclined manner of 45 degrees, and a temperature measuring hole 13 is arranged in the horizontal direction opposite to the reflector 12, two sides of the temperature measuring passage 8 are respectively communicated with the air inlet passage 6 and the air outlet passage 9 through an air inlet guide passage 7 and an air outlet guide passage 10, and the air inlet passage 6 and the air outlet passage 9 are respectively communicated with the air inlet 5 and the air outlet 11 on two sides.
Further: the intake guide passage 7 is inclined at 45 ° and has an axis perpendicular to the mirror surface of the mirror 12.
The flange plate at the top of the furnace body adopts a special structural design, a reflector inclined at an angle of 45 degrees is arranged at the top end, the light is horizontally guided out for temperature measurement, the inclined design is different from the traditional horizontal temperature measurement window, and the effect of preventing deposition can be achieved. The gas enters from the edge of the flange, passes through a special path (the path is vertical to the light-emitting mirror), purges the reflector while introducing the gas, deposits impurities on the surface, and then is discharged through the path on the other side and takes away the impurities. A guide cylinder is arranged between the flange plate and the crucible cover, so that volatile impurities in the furnace body are prevented from entering the gas circuit, and meanwhile, the effect of light guiding is achieved, and temperature measurement and focusing are facilitated. A1-2 mm gap is reserved at the contact part of the guide cylinder and the crucible cover, so that the influence on the temperature measurement effect and the service life due to contact heat transfer among materials is avoided, the guide cylinder can be fixed in a point connection mode, the temperature measurement hole is open or a glass plate is arranged in the temperature measurement hole, the glass can be arranged to prevent gas from overflowing, the aperture of the open adjustable temperature measurement hole is adjustable, and the gas emission is reduced.
This embodiment is only illustrative of the patent and does not limit the scope of protection thereof, and those skilled in the art can make modifications to its part without departing from the spirit of the patent.
Claims (2)
1. The utility model provides a prevent sheltering from temperature measuring device for crystal growth which characterized in that: comprises a crucible (1), a crucible cover (2), a guide cylinder (3), a temperature measuring flange (4) and a reflector (12);
the crucible cover (2) is arranged on the crucible (1), the temperature measuring flange (4) is communicated with the inside of the crucible (1) through the guide cylinder (3), a temperature measuring passage (8) is arranged in the temperature measuring flange (4), a reflector (12) is arranged at the top of the temperature measuring passage (8), the reflector (12) is arranged in an inclined manner of 45 degrees, temperature measuring holes (13) are formed in the horizontal direction opposite to the reflector (12), the two sides of the temperature measuring passage (8) are communicated with the air inlet passage (6) and the air outlet passage (9) through the air inlet guide passage (7) and the air outlet guide passage (10), and the air inlet passage (6) and the air outlet passage (9) are communicated with the air inlet (5) and the air outlet (11) on the two sides of the temperature measuring flange (4) respectively.
2. The device of claim 1, wherein the temperature sensor is configured to measure the temperature of the crystal by: the air inlet guide passage (7) is obliquely arranged at an angle of 45 degrees, and the axis of the air inlet guide passage is vertical to the mirror surface of the reflector (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010317440.5A CN111379019A (en) | 2020-04-21 | 2020-04-21 | A prevent sheltering from temperature measuring device for crystal growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010317440.5A CN111379019A (en) | 2020-04-21 | 2020-04-21 | A prevent sheltering from temperature measuring device for crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111379019A true CN111379019A (en) | 2020-07-07 |
Family
ID=71218979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010317440.5A Withdrawn CN111379019A (en) | 2020-04-21 | 2020-04-21 | A prevent sheltering from temperature measuring device for crystal growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111379019A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318516A (en) * | 2021-12-24 | 2022-04-12 | 国宏中宇科技发展有限公司 | Crystal growth furnace air inlet structure and crystal growth furnace |
| CN114754586A (en) * | 2022-05-12 | 2022-07-15 | 眉山博雅新材料股份有限公司 | High-temperature furnace |
-
2020
- 2020-04-21 CN CN202010317440.5A patent/CN111379019A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318516A (en) * | 2021-12-24 | 2022-04-12 | 国宏中宇科技发展有限公司 | Crystal growth furnace air inlet structure and crystal growth furnace |
| CN114754586A (en) * | 2022-05-12 | 2022-07-15 | 眉山博雅新材料股份有限公司 | High-temperature furnace |
| CN114754586B (en) * | 2022-05-12 | 2023-02-17 | 眉山博雅新材料股份有限公司 | High-temperature furnace |
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20200707 |
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| WW01 | Invention patent application withdrawn after publication |