CN211005715U - Step type blanking device of single crystal furnace - Google Patents
Step type blanking device of single crystal furnace Download PDFInfo
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- CN211005715U CN211005715U CN201921396793.8U CN201921396793U CN211005715U CN 211005715 U CN211005715 U CN 211005715U CN 201921396793 U CN201921396793 U CN 201921396793U CN 211005715 U CN211005715 U CN 211005715U
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- single crystal
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Abstract
The utility model relates to a cascaded unloader of single crystal growing furnace, it includes the unloading passageway unloading in-channel connection is equipped with a plurality of striker plates, and they divide into two and are listed as relative distribution to two are listed as the striker plate dislocation set and form cascaded structure, the striker plate is formed by carbon-carbon plate and silicon plate complex, carbon-carbon plate and silicon plate thickness ratio are (2-4): 1. the utility model discloses can reduce the material potential energy that falls, reduce impurity and get into.
Description
Technical Field
The utility model relates to a feed opening structure, concretely relates to novel feed opening structure for single crystal growing furnace.
Background
The single crystal furnace is a device for melting polycrystalline materials such as polycrystalline silicon and the like by using a graphite heater in an inert gas environment and growing dislocation-free single crystals by using a Czochralski method. The production process flow of the single crystal furnace is generally as follows: firstly, a certain amount of polycrystalline silicon raw material is put into a crucible and heated to be molten, seed crystals are clamped at the lower end of a pull rod and immersed into the molten crystal raw material, the pull rod is slowly pulled upwards and simultaneously slowly rotated, and finally, the cylindrical monocrystalline silicon rod is grown.
At present, a feed opening of a single crystal furnace is straight, materials directly fall into a liquid level, and the liquid level is greatly fluctuated, so that the crystal pulling quality is influenced; in addition, the feed opening is made of quartz, the temperature in the furnace can reach over 1300 ℃, quartz can be softened in the long-term use process, and materials fall to carry quartz impurities into liquid.
Disclosure of Invention
The purpose of the invention is as follows: the utility model aims at overcoming the defects in the prior art and providing a single crystal furnace stepped blanking device which can reduce the falling potential energy of materials and reduce the entering of impurities.
The technical scheme is as follows: in order to solve the technical problem, cascaded unloader of single crystal growing furnace, it includes the unloading passageway in-connection is equipped with a plurality of striker plates, and they divide into two and are listed as relative distribution to two striker plate dislocation sets form cascaded structure, the striker plate is formed by carbon-carbon plate and silicon plate complex, carbon-carbon plate and silicon plate thickness ratio are (2-4): 1.
the size of each row of striker plates in two rows of striker plates is the same, and the outer end connecting surfaces of the two rows of striker plates are overlapped.
The sum of the horizontal lengths of the left and right adjacent striker plates in the two rows of striker plates is greater than the horizontal length of the blanking channel in the same direction.
The lower port of the striker plate at the lowest end in the two rows of striker plates is higher than the liquid level in the single crystal furnace.
The thickness ratio of the carbon plate to the silicon plate is 3: 1.
the silicon plate covers the front and the side of the carbon-carbon plate.
Has the advantages that: compared with the prior art, the utility model, it is showing the advantage and is: the utility model discloses overall structure sets up rationally, adopts a plurality of striker plates, and the material gets into the liquid level through the striker plate, and its direct potential energy that falls into the liquid level of greatly reduced to make the liquid level undulant reduce, improve the crystal pulling quality, the striker plate is formed by carbon board and silicon slab complex, and carbon board mainly plays the supporting role, and the silicon slab can reduce impurity entering liquid, the pollution abatement risk.
Drawings
Fig. 1 is a schematic structural diagram of the present invention;
fig. 2 is a structural diagram of the material baffle plate of the present invention.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and examples.
As shown in fig. 1 and 2, cascaded unloader of single crystal growing furnace, it includes unloading passageway 1 the connection is equipped with a plurality of striker plates 2 in the unloading passageway 1, they divide into two and are listed as relative distribution to two striker plates 2 dislocation set form cascaded structure, two horizontal length sum more than or equal to same direction unloading passageway 1 of two adjacent striker plates 2 about in 2 striker plates, two lower ports that are listed as striker plate 2 of lower extreme are higher than liquid level in the single crystal growing furnace in 2 striker plates, striker plate 2 is formed by carbon plate 3 and silicon plate 4 complex, silicon plate 4 covers in the front and the side of carbon plate 3, the thickness ratio of carbon plate 3 and silicon plate 4 is 3: 1. the utility model discloses overall structure sets up rationally, adopts a plurality of striker plates, and the material gets into the liquid level through the striker plate, and its direct potential energy that falls into the liquid level of greatly reduced to make the liquid level undulant reduce, improve the crystal pulling quality, the striker plate is formed by carbon board and silicon slab complex, and carbon board mainly plays the supporting role, and the silicon slab can reduce impurity entering liquid, the pollution abatement risk.
The utility model provides a thinking and method, the method and the way of specifically realizing this technical scheme are many, above only the utility model discloses a preferred embodiment should point out, to the ordinary technical personnel in this technical field, not deviating from the utility model discloses under the prerequisite of principle, can also make a plurality of improvements and moist decorations, these improvements should also be regarded as the utility model discloses a protection range, each component that does not make clear and definite in this embodiment all can be realized with prior art.
Claims (6)
1. Cascaded unloader of single crystal growing furnace which characterized in that: it includes unloading passageway (1) in-connection is equipped with a plurality of striker plates (2), and they divide into two and are listed as relative distribution to two striker plates (2) dislocation sets form cascaded structure, striker plate (2) are formed by carbon-carbon plate (3) and silicon plate (4) complex, the thickness ratio of carbon-carbon plate (3) and silicon plate (4) is (2-4): 1.
2. the stepped blanking device of a single crystal furnace according to claim 1, characterized in that: the size of each row of striker plates (2) in two rows of striker plates (2) is the same, and the outer end connecting surfaces of the two rows of striker plates (2) are overlapped.
3. The stepped blanking device of a single crystal furnace according to claim 1, characterized in that: the sum of the horizontal lengths of the left and right adjacent striker plates (2) in the two rows of striker plates (2) is greater than the horizontal length of the blanking channel (1) in the same direction.
4. The stepped blanking device of a single crystal furnace according to claim 1, characterized in that: the lower port of the striker plate (2) at the lowest end in the two rows of striker plates (2) is higher than the liquid level in the single crystal furnace.
5. The stepped blanking device of a single crystal furnace according to claim 1, characterized in that: the thickness ratio of the carbon plate (3) to the silicon plate (4) is 3: 1.
6. the stepped blanking device of a single crystal furnace according to claim 1, characterized in that: the silicon plate (4) covers the front surface and the side surface of the carbon-carbon plate (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921396793.8U CN211005715U (en) | 2019-08-27 | 2019-08-27 | Step type blanking device of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921396793.8U CN211005715U (en) | 2019-08-27 | 2019-08-27 | Step type blanking device of single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211005715U true CN211005715U (en) | 2020-07-14 |
Family
ID=71467808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921396793.8U Expired - Fee Related CN211005715U (en) | 2019-08-27 | 2019-08-27 | Step type blanking device of single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211005715U (en) |
-
2019
- 2019-08-27 CN CN201921396793.8U patent/CN211005715U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200714 Termination date: 20210827 |
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| CF01 | Termination of patent right due to non-payment of annual fee |