CN107217297A - A kind of production technology of overlength N-type silicon core pole - Google Patents
A kind of production technology of overlength N-type silicon core pole Download PDFInfo
- Publication number
- CN107217297A CN107217297A CN201710340051.2A CN201710340051A CN107217297A CN 107217297 A CN107217297 A CN 107217297A CN 201710340051 A CN201710340051 A CN 201710340051A CN 107217297 A CN107217297 A CN 107217297A
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- CN
- China
- Prior art keywords
- crystal
- isometrical
- overlength
- flow amount
- argon flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of production technology of overlength N-type silicon core pole, comprise the following steps：--- --- stable --- --- isometrical --- ending --- is cooled down seeding material for charging.By the control of argon flow amount in crystal growing process in the present invention, ensure that crystal heat slowly scatters and disappears with this.Adjusting device technological parameter, includes heating power, the long brilliant speed of reduction crystal of rise graphite heater, allows temperature slowly to reduce, by controlling rate of crystalline growth, play slow long brilliant effect, reduce dislocation and thermal stress.By controlling the temperature of argon flow amount and cavity and the aperture of vacuum valve to reduce scattering and disappearing for N-type impurity, impurity is allowed reasonably to be distributed in crystal.
Description
Technical field
The invention belongs to the brilliant field of monocrystalline silicon material length, and in particular to a kind of production technology of overlength N-type silicon core pole.
Background technology
The operation principle of single crystal growing furnace：Its main operational principle be in inert gas cavity by graphite resistance heater with
High temperature (1600 DEG C) melts semi-conducting material in silica crucible (polysilicon), stably, then passes through contact of the seed crystal with molten silicon, nationality
The key such as seed crystal lifting and rotating mechanism, crucible lifting and rotating mechanism, measuring diameter control system, temperature measuring control system
The precision-fit of part, carries out recrystallizing for single direction by the liquation of polysilicon crystal, for preparing solar level, also may be used
For the single crystal silicon of circuit-level.
The content of the invention
Goal of the invention：In order to solve the deficiencies in the prior art, the invention provides a kind of production of overlength N-type silicon core pole
Technique.
Technical scheme：A kind of production technology of overlength N-type silicon core pole, comprises the following steps：Feed --- material ---
It is stable that --- --- isometrical --- ending --- is cooled down seeding；Wherein：
In the charging：Charge ratio is as follows：OCI500：80kg-100kg, REC4023：40kg-60kg, block flaw-piece：
20kg-40kg, foundry alloy phosphorus：30.0g-35.0g；Silica crucible size：Crucible height increases to 410mm by 380mm, is easy to one
It is secondary to feed intake；
It is described it is isometrical in：Argon flow amount setting 50slm adjustment 40slm, reduce the loss of heat；Isometrical temperature compensation averagely increases
2 DEG C, guiding crystal slowly grows；Crystal bar measurement diameter is more than 181mm；
In the cooling：Power 30kw is maintained 1 hour, and 10kw closes power after maintaining 1 hour；Time of coming out of the stove is adjusted by 6H
To 8H, thermal stress in sufficiently cool reduction crystal bar.
Beneficial effect：By the control of argon flow amount in crystal growing process in the present invention, ensure that crystal heat delays with this
Slow scatters and disappears.Adjusting device technological parameter, includes heating power, the long brilliant speed of reduction crystal of rise graphite heater, allows
Temperature is slowly reduced, by controlling rate of crystalline growth, is played slow long brilliant effect, is reduced dislocation and thermal stress.Pass through control
The temperature of argon flow amount and cavity processed and the aperture of vacuum valve reduce scattering and disappearing for N-type impurity, make impurity reasonable in crystal
Distribution.
Size of the invention by changing argon flow amount in crystal growing process, lifts the power of heater, lifts crystal
Temperature in growth course, guiding crystal slowly grows, the slow thermal stress scattered and disappeared, reduce crystal of control heat.We lead
Following measure is taken, argon flow amount 40L/M is adjusted to from 50L/M, mean compensation algorithm temperature lifts 2 degree, the brilliant speed of crystal length
Degree declines 0.1mm/m.
Embodiment
The technical scheme in the embodiment of the present invention will be clearly and completely described below, so that the technology of this area
Personnel can be better understood from advantages and features of the invention, so as to make apparent boundary to protection scope of the present invention
It is fixed.Embodiment described in the invention is only a part of embodiment of the invention, rather than whole embodiments, based on the present invention
In embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
Embodiment
A kind of production technology of overlength N-type silicon core pole, comprises the following steps：--- material is --- stable --- to draw for charging
It is brilliant that --- isometrical --- ending --- is cooled down；Wherein：
In the charging：Charge ratio is as follows：OCI500：80kg-100kg, REC4023：40kg-60kg, block flaw-piece：
20kg-40kg, foundry alloy phosphorus：30.0g-35.0g；Silica crucible size：Crucible height increases to 410mm by 380mm, is easy to one
It is secondary to feed intake；
It is described it is isometrical in：Argon flow amount setting 50slm adjustment 40slm, reduce the loss of heat；Isometrical temperature compensation averagely increases
2 DEG C, guiding crystal slowly grows；Crystal bar measurement diameter is more than 181mm；
In the cooling：Power 30kw is maintained 1 hour, and 10kw closes power after maintaining 1 hour；Time of coming out of the stove is adjusted by 6H
To 8H, thermal stress in sufficiently cool reduction crystal bar.
By the control of argon flow amount in crystal growing process in the present invention, ensure that crystal heat slowly scatters and disappears with this.
Adjusting device technological parameter, includes heating power, the long brilliant speed of reduction crystal of rise graphite heater, allows temperature slowly to drop
It is low, by controlling rate of crystalline growth, slow long brilliant effect is played, dislocation and thermal stress is reduced.By controlling argon flow amount
Scattering and disappearing for N-type impurity is reduced with the temperature of cavity and the aperture of vacuum valve, allows impurity to be reasonably distributed in crystal.
Size of the invention by changing argon flow amount in crystal growing process, lifts the power of heater, lifts crystal
Temperature in growth course, guiding crystal slowly grows, the slow thermal stress scattered and disappeared, reduce crystal of control heat.We lead
Following measure is taken, argon flow amount 40L/M is adjusted to from 50L/M, mean compensation algorithm temperature lifts 2 degree, the brilliant speed of crystal length
Degree declines 0.1mm/m.
Claims (1)
1. a kind of production technology of overlength N-type silicon core pole, it is characterised in that：Comprise the following steps：Feed --- material ---
It is stable that --- --- isometrical --- ending --- is cooled down seeding；Wherein：
In the charging：Charge ratio is as follows：OCI500：80kg-100kg, REC4023：40kg-60kg, block flaw-piece：
20kg-40kg, foundry alloy phosphorus：30.0g-35.0g；Silica crucible size：Crucible height increases to 410mm by 380mm, is easy to one
It is secondary to feed intake；
It is described it is isometrical in：Argon flow amount setting 50slm adjustment 40slm, reduce the loss of heat；Isometrical temperature compensation averagely increases by 2 DEG C,
Guiding crystal slowly grows；Crystal bar measurement diameter is more than 181mm；
In the cooling：Power 30kw is maintained 1 hour, and 10kw closes power after maintaining 1 hour；Time of coming out of the stove is adjusted to by 6H
Thermal stress in 8H, sufficiently cool reduction crystal bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710340051.2A CN107217297A (en) | 2017-05-15 | 2017-05-15 | A kind of production technology of overlength N-type silicon core pole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710340051.2A CN107217297A (en) | 2017-05-15 | 2017-05-15 | A kind of production technology of overlength N-type silicon core pole |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107217297A true CN107217297A (en) | 2017-09-29 |
Family
ID=59944714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710340051.2A Pending CN107217297A (en) | 2017-05-15 | 2017-05-15 | A kind of production technology of overlength N-type silicon core pole |
Country Status (1)
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| CN (1) | CN107217297A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554760A (en) * | 2019-01-31 | 2019-04-02 | 内蒙古通威高纯晶硅有限公司 | A kind of trace doped method of masterbatch for avoiding silicon core from making the transition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102242397A (en) * | 2011-07-15 | 2011-11-16 | 西安华晶电子技术股份有限公司 | Process for producing Czochralski silicon single crystal |
| CN102758244A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Compound heating-type Czochralski polycrystalline silicon or monocrystal silicon preparation technology |
| CN106319620A (en) * | 2015-07-01 | 2017-01-11 | 宁夏隆基硅材料有限公司 | Crystal pulling method for single crystal by Czochralski pulling |
-
2017
- 2017-05-15 CN CN201710340051.2A patent/CN107217297A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102242397A (en) * | 2011-07-15 | 2011-11-16 | 西安华晶电子技术股份有限公司 | Process for producing Czochralski silicon single crystal |
| CN102758244A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Compound heating-type Czochralski polycrystalline silicon or monocrystal silicon preparation technology |
| CN106319620A (en) * | 2015-07-01 | 2017-01-11 | 宁夏隆基硅材料有限公司 | Crystal pulling method for single crystal by Czochralski pulling |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554760A (en) * | 2019-01-31 | 2019-04-02 | 内蒙古通威高纯晶硅有限公司 | A kind of trace doped method of masterbatch for avoiding silicon core from making the transition |
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| PB01 | Publication | ||
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Application publication date: 20170929 |