CN104020178B - A kind of light transmission detector unit of crystalline silicon wafer defect detection equipment - Google Patents
A kind of light transmission detector unit of crystalline silicon wafer defect detection equipment Download PDFInfo
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- CN104020178B CN104020178B CN201410191377.XA CN201410191377A CN104020178B CN 104020178 B CN104020178 B CN 104020178B CN 201410191377 A CN201410191377 A CN 201410191377A CN 104020178 B CN104020178 B CN 104020178B
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Abstract
The invention discloses the light transmission detector unit of a kind of crystalline silicon wafer defect detection equipment, it includes photoelectrical coupler for connecting CPU and can to send wavelength be the 400nm light source with glazed thread, described light source and photoelectrical coupler are divided into the both sides of silicon chip to be detected, the photosensitive mouth of described photoelectrical coupler is relative with the light-emitting window of described light source, described light source irradiates the one side of described silicon chip, described photoelectrical coupler receives the optical signal from silicon chip another side, and export so that this signal of telecommunication is processed and analyzes after converting optical signals to the signal of telecommunication, thus obtain defective data.The present invention both can detect silicon chip overall dimensions, can effectively detect again the hole defect of silicon chip, it is possible to greatly reduces the phenomenon of battery electrode short circuit, thus increases substantially the conversion efficiency of battery, and detection efficiency is also greatly improved.
Description
Technical field
The present invention relates to the detection technique in photovoltaic field, set particularly to a kind of crystalline silicon wafer defects detection
Standby light transmission detector unit.
Background technology
Along with the continuous progress of technical merit, in order to avoid the silicon chip of existing defects for photovoltaic cell as far as possible
Produce, gradually apply at silicon chip and battery for the technology of original silicon chip various aspects of performance parameter detecting and equipment
In production process, from being initially required the silicon wafer thickness of measurement, resistivity and carbon oxygen content, need up till now to measure
The overall dimensions of silicon chip, luminescence generated by light and infrared, silicon chip various aspects of performance parameter detecting project is just stepped up,
Coverage rate is wider, and testing efficiency and accuracy are also stepping up.
Original silicon chip is when detection, in addition to thickness and resistivity use same detection module and measure, and luminescence generated by light
As comprehensive characterization technique more reliably, it is specifically designed to and large area crystal growth defect, machinery in silicon chip are damaged
Wound detects, infrared, is mainly used in the detection of Organic Pollution, impurity particle, crackle, more than detected
Journey is required to certain dead time, and the overall dimensions of silicon chip also needs to additionally pass through independent optical module or machine
Platform is measured.As it is shown in figure 1, be for measuring silicon chip profile chi in existing crystalline silicon wafer defect detection equipment
Very little measurement module, it includes camera 1 and light source 4, and during detection, silicon chip 2 is placed in camera 1 and uses LED3
Light source 4 between, light source 4 shoots the photo of silicon chip 2 from the back side illuminaton of silicon chip 2, camera 1 and is passed
Deliver to CPU and be analyzed obtaining the overall dimensions data of silicon chip.
Hole in silicon chip is the one of Defect, if the hole in silicon chip and the grid of making in battery process
Line coincides, and will result in and is positioned at the grid line metal of hole location and subsides, causes the short circuit of battery the two poles of the earth, strengthen electricity
The leakage current of pond sheet, thus affect conversion efficiency.Monocrystalline silicon piece hole thereon after cleaning and high temperature is permissible
It is found, but, polycrystalline or ingot single crystal silicon chip exist naked eyes in a large number and are difficult to the micropore of 3～10 μm found,
And it is limited to camera resolution or the difference of material surface recombination rate, use photoluminescent techniques to be difficult to differentiate
The least micropore.It addition, luminescence generated by light damages for pore defect and silicon chip surface or pollutes more difficult differentiation,
And the pollution of silicon chip surface generally can't cause the significantly forfeiture of battery performance.
At present, occur in that the method using inert metal induced corrosion to expand hole scope, after hole expanded range,
Optical microscope can be used to observe micropore easily.But, the method needs to use inert metal in early stage
Induced corrosion expands hole scope, and this condition is the harshest, and expands this initial period of hole scope
The veryest long, therefore, this method is difficult to generally applicable in actual production.
Summary of the invention
It is an object of the invention to provide a kind of simple in construction, can effectively detect the hole defect of silicon chip, minimizing electricity
Pond electric pole short circuit, improve battery conversion efficiency, improve the printing opacity of crystalline silicon wafer defect detection equipment of detection efficiency
Property detector unit.
The purpose of the present invention can be realized by following measures, the printing opacity of a kind of crystalline silicon wafer defect detection equipment
Property detector unit, it is characterised in that: it includes photoelectrical coupler for connecting CPU and can send out
The a length of 400nm of efferent echo is divided into the two of silicon chip to be detected with the light source of glazed thread, described light source and photoelectrical coupler
Side, the photosensitive mouth of described photoelectrical coupler is relative with the light-emitting window of described light source, and described light source irradiates described silicon chip
One side, described photoelectrical coupler receives from the optical signal of silicon chip another side, and converts optical signals to
After the signal of telecommunication, output is to process this signal of telecommunication and analyze, thus obtains defective data.
The defective data of the present invention include silicon chip overall dimensions, edge incompleteness specification, bore hole size (hole is the biggest,
Penetrating light intensity is the highest) and quantity information.
It is the 400nm light source with glazed thread that present invention employing can send wavelength, and this light source has one for silicon chip
Fixed light transmission, photoelectrical coupler receives the optical signal (being used for detecting silicon chip overall dimensions) from silicon chip edge
With the point-like light signal of hole, the position of point-like light signal is for calculating the quantity of hole, and point-like light is believed
Number intensity for characterizing the size of hole.Therefore the present invention both can detect silicon chip overall dimensions, can effectively examine again
Survey the hole defect of silicon chip, it is possible to greatly reduce the phenomenon of battery electrode short circuit, thus increase substantially battery
Conversion efficiency, and detection efficiency is also greatly improved.
Preferably, the light that described light source sends is the red visible of more than wavelength 600nm.The wavelength of HONGGUANG
Longer, it has in the hole of silicon chip feature diffraction and scattering easily occurring and pass, and therefore its light transmission is good,
The probability that silicon chip hole is found can be improved.
As one embodiment of the present invention, described photoelectrical coupler and described light source are strip, they
All perpendicular with the direction of transfer of silicon chip to be detected, the photosensitive mouth of described photoelectrical coupler and the light-emitting window of light source
Length is at least equal to the width of silicon chip to be detected.
The present invention can have an implementation below:
Described photoelectrical coupler is positioned at the top of silicon chip to be detected, and described photosensitive mouth is positioned at described photoelectrical coupler
On bottom surface, described light source is positioned at the lower section of silicon chip to be detected, and described light-emitting window is positioned on the end face of described light source,
Described silicon chip to be detected is placed on the conveyer belt of level and moves with uniform velocity.
Described light source is mainly made up of strip lamp housing and at least string LED being located in lamp housing, described lamp housing
End face has described light-emitting window.
As a modification of the present invention, set up a pair connection central authorities process separately in the both sides of described light source and near light source
The sensor of unit, described sensor is arranged as before and after the direction of transfer of silicon chip to be detected, and the sensor in front connects
Receive positional information that silicon chip to be detected enters and be sent to CPU with control light source and photoelectrical coupler with
Shi Kaiqi is to start detection, during the sensor reception silicon chip to be detected at rear positions away from information and is sent to
Central Processing Unit simultaneously closes off with control light source and photoelectrical coupler thus completes detection.The present invention uses sensor
Send signal to work asynchronously to central processing unit controls light source and photoelectrical coupler, idle do not carry out detecting
Period can stop again present invention work, it is possible to reduce stream time of the present invention, reduces energy consumption, extends and uses
Life-span.
As a kind of preferred implementation of the present invention, the distance between described light source and photoelectrical coupler is
5～30mm, described silicon chip to be detected is in the two centre position.If photoelectrical coupler distance silicon chip is farther out, light source
Exceed the light that the part of silicon chip edge is sent, enter and inject in photoelectrical coupler, it may appear that due to silicon chip edge
The problem that optical signal is too strong and causes being difficult to resolving aperture hole defect institute transmitted light.
Compared with prior art, the present invention has a following significantly effect:
(1) present configuration is simple, detection efficiency is greatly improved, and both can detect the overall dimensions of silicon chip, can have again
The hole defect of effect detection silicon chip, it is possible to the phenomenon of battery electrode short circuit is greatly reduced, improves the conversion of battery
Efficiency.
(2) the present invention uses HONGGUANG as light source, can improve the probability that silicon chip Hole is found.
(3) the present invention uses sensor to send signal and synchronizes work to central processing unit controls light source and photoelectrical coupler
Make, present invention work can be stopped again in the idle period not carrying out detecting, it is possible to reduce running hours of the present invention
Between, reduce energy consumption, increase the service life.
Distance between photoelectrical coupler the most of the present invention and light source has limited, and can solve owing to silicon chip edge light is believed
Number too strong and problem that causes being difficult to resolving aperture hole defect institute transmitted light.
Accompanying drawing explanation
The invention will be described in further detail with specific embodiment below in conjunction with the accompanying drawings.
Fig. 1 is the structural representation of existing measurement module；
Fig. 2 is the structural representation of the present invention.
Detailed description of the invention
As it is shown in figure 1, be the light transmission detector unit of the present invention a kind of crystalline silicon wafer defect detection equipment, it includes
For connecting the photoelectrical coupler 5 of CPU, light source 6 and sensor 8, the light that light source 6 sends is
The red visible of more than wavelength 600nm.Light source 6 and photoelectrical coupler 5 are divided into the two of silicon chip 2 to be detected
Side, the distance between light source 6 and photoelectrical coupler 5 is 8mm, and silicon chip 2 to be detected is in the two centre position.
The photosensitive mouth of photoelectrical coupler 5 is relative with the light-emitting window of light source 6, and light source 6 irradiates the one side of silicon chip 2, light
Electric coupler 5 receives the optical signal from silicon chip 2 another side, and converts optical signals to output after the signal of telecommunication
To CPU, by CPU, this signal of telecommunication is processed and analyzes, thus obtain number of defects
According to.
In the present embodiment, photoelectrical coupler 5 and light source 6 are strip, and wherein, photoelectrical coupler 5 has
There are high-resolution, photoelectrical coupler 5 and light source 6 all perpendicular with the direction of transfer A of silicon chip 2 to be detected, light
Source 6 is mainly by strip lamp housing be located at the LED7 that string in lamp housing uniformly arranges and form, and the end face of lamp housing is opened
There is light-emitting window.Photoelectrical coupler 5 is positioned at the top of silicon chip 2 to be detected, and photosensitive mouth is positioned at photoelectrical coupler 5
On bottom surface, light source 6 is positioned at the lower section of silicon chip 2 to be detected, and light-emitting window is positioned on the end face of light source 6, light thermocouple
The length of the photosensitive mouth of clutch 5 and the light-emitting window of light source 6 is slightly longer than the width of silicon chip 2 to be detected, silicon to be detected
Sheet 2 is placed on the conveyer belt of level and moves with uniform velocity.
The sensor 8 of a pair connection CPU, sensor is set up separately in the both sides of light source 6 and close light source 6
8 are arranged as before and after the direction of transfer A of silicon chip to be detected, and the sensor 8 in front receives silicon chip 2 to be detected and enters
Positional information and be sent to CPU and open to open to control light source 6 and photoelectrical coupler 5 simultaneously
Beginning to detect, the sensor 8 at rear receives silicon chip 2 to be detected and positions away from information and be sent to central authorities' process list
Unit simultaneously closes off with control light source 6 and photoelectrical coupler 5 thus completes detection.Light source and light thermocouple can be controlled
Clutch works asynchronously, and can stop again work in the idle period not carrying out detecting, it is possible to reduce stream time,
Reduce energy consumption, increase the service life.
The work process of the present invention is: silicon chip to be detected is placed on conveyer belt at the uniform velocity by photoelectrical coupler and light source
Between gap, the sensor in front detects silicon chip to be detected, to CPU send signal, central authorities
Processing unit controls light source and photoelectrical coupler is opened, the two synchronous working, and light source irradiates towards silicon chip back side,
Photoelectrical coupler scanning silicon chip edge and hole, receive the optical signal from silicon chip edge and the point-like light of hole
Signal, the optical signal of silicon chip edge is used for detecting silicon chip overall dimensions, and the position of point-like light signal is used for calculating
The quantity of hole, the intensity of point-like light signal is for characterizing the size of hole, so, is no need for silicon chip in fortune
Suspend or reducing speed during Dong；Above-mentioned signal is sent to CPU, centre by photoelectrical coupler
Silicon chip overall dimensions, edge incompleteness specification, hole penetrating light intensity and quantity information are added up by reason unit by calculating
Out, between the fully out light source of silicon chip to be detected and photoelectrical coupler, the signal of the sensor detection at rear passes
Deliver to CPU, central processing unit controls light source and photoelectrical coupler close, complete a silicon chip
Detection；Hereafter the detection of silicon chip circulates as procedure described above and carries out.
Embodiments of the present invention are not limited to this, according to the foregoing of the present invention, according to the common skill of this area
Art knowledge and customary means, without departing under the present invention above-mentioned basic fundamental thought premise, light source of the present invention and light
Distance between electric coupler is 5～30mm；Light source is that can to send wavelength be the 400nm light source with glazed thread；
LED in light source is at least 1 row, can arrange the columns of LED and concrete arrangement according to actual needs, and
The brightness of light source can also be adjusted according to actual needs.Therefore, the present invention can also make other multiple shape
The amendment of formula, replace or change, within all falling within scope.
Claims (4)
1. the light transmission detector unit of a crystalline silicon wafer defect detection equipment, it is characterised in that: it include for
Connect the photoelectrical coupler of CPU and can to send wavelength be the 400nm light source with glazed thread, described
Light source and photoelectrical coupler are divided into the both sides of silicon chip to be detected, the photosensitive mouth of described photoelectrical coupler and described light
The light-emitting window in source is relative, and described light source irradiates the one side of described silicon chip, and described photoelectrical coupler receives from silicon
The optical signal of sheet another side, and after converting optical signals to the signal of telecommunication output so that this signal of telecommunication is processed
And analysis, thus obtain defective data；Distance between described light source and photoelectrical coupler is 5～30mm, described
Silicon chip to be detected is in the two centre position；Described defective data include silicon chip overall dimensions, edge incompleteness specification,
Bore hole size and quantity information；The light that described light source sends is the red visible of more than wavelength 600nm；Institute
Stating photoelectrical coupler and described light source is strip, they are all perpendicular with the direction of transfer of silicon chip to be detected,
The length of the photosensitive mouth of described photoelectrical coupler and the light-emitting window of light source is at least equal to the width of silicon chip to be detected；Light
Electric coupler scanning silicon chip edge and hole, receive the point-like light letter of the optical signal from silicon chip edge and hole
Number, the optical signal of silicon chip edge is used for detecting silicon chip overall dimensions, and the position of point-like light signal is used for calculating hole
The quantity in hole, the intensity of point-like light signal is for characterizing the size of hole.
The light transmission detector unit of crystalline silicon wafer defect detection equipment the most according to claim 1, its feature
Being: described photoelectrical coupler is positioned at the top of silicon chip to be detected, described photosensitive mouth is positioned at described photoelectrical coupler
Bottom surface on, described light source is positioned at the lower section of silicon chip to be detected, and described light-emitting window is positioned on the end face of described light source,
Described silicon chip to be detected is placed on the conveyer belt of level and moves with uniform velocity.
The light transmission detector unit of crystalline silicon wafer defect detection equipment the most according to claim 2, its feature
It is: described light source is mainly made up of strip lamp housing and at least string LED being located in lamp housing, described lamp housing
End face have described light-emitting window.
4. according to the light transmission detector unit of the crystalline silicon wafer defect detection equipment described in any one of claims 1 to 3,
It is characterized in that: set up the sensor of a pair connection CPU separately in the both sides of described light source and close light source,
Described sensor is arranged as before and after the direction of transfer of silicon chip to be detected, and the sensor in front receives silicon chip to be detected and enters
The positional information that enters also is sent to CPU and opens to start to control light source and photoelectrical coupler simultaneously
Detection, the sensor at rear receives silicon chip to be detected and positions away from information and be sent to CPU with control
Light source processed and photoelectrical coupler simultaneously close off thus complete detection.
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| CN201410191377.XA CN104020178B (en) | 2014-05-08 | 2014-05-08 | A kind of light transmission detector unit of crystalline silicon wafer defect detection equipment |
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| CN201410191377.XA CN104020178B (en) | 2014-05-08 | 2014-05-08 | A kind of light transmission detector unit of crystalline silicon wafer defect detection equipment |
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| CN105910812A (en) * | 2016-06-14 | 2016-08-31 | 广西玉柴机器股份有限公司 | Detection device for detecting whether long and thin hole in long and thin part is unblocked |
| CN108037137A (en) * | 2018-02-01 | 2018-05-15 | 山东山大天维新材料有限公司 | The non-destructive testing device and detection method of bulletproof halmet of composite material structural homogeneity |
| CN108319026B (en) * | 2018-03-14 | 2020-08-04 | 湖北三江航天江北机械工程有限公司 | Film viewing lamp for industrial rubber film inclusion detection and detection method |
| JP7063181B2 (en) * | 2018-08-09 | 2022-05-09 | 株式会社Sumco | Wafer inspection method and inspection equipment |
| CN109374633A (en) * | 2018-11-13 | 2019-02-22 | 上海超硅半导体有限公司 | A kind of detection method of sapphire wafer defect |
| CN111578851B (en) * | 2020-05-12 | 2021-08-17 | 晶澳太阳能有限公司 | Method for testing plate type PECVD microwave capability |
| CN112067663B (en) * | 2020-08-05 | 2024-01-26 | 山东天岳先进科技股份有限公司 | Method and device for detecting resistivity of high-purity silicon carbide crystal |
| CN112179288B (en) * | 2020-08-19 | 2022-09-20 | 成都飞机工业（集团）有限责任公司 | Part shape measuring device and measuring method based on refraction polarization intensity information |
| CN113976467A (en) * | 2021-10-22 | 2022-01-28 | 西安奕斯伟材料科技有限公司 | System for be used for selecting separately silicon chip |
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| JP2004053338A (en) * | 2002-07-18 | 2004-02-19 | Toshiba Ceramics Co Ltd | Method of inspecting defect of silicon wafer |
| CN101498897B (en) * | 2008-12-17 | 2011-11-30 | 上海微电子装备有限公司 | Edge exposure device and its control method |
| CN201844980U (en) * | 2010-08-31 | 2011-05-25 | 常州视觉龙机电设备有限公司 | Automatic detection system of solar silicon wafer |
| JP2012078140A (en) * | 2010-09-30 | 2012-04-19 | Hitachi High-Technologies Corp | Substrate surface defect inspection method and device thereof |
| CN202676615U (en) * | 2012-06-25 | 2013-01-16 | 库特勒自动化系统(苏州)有限公司 | Silicon chip detecting device |
| CN203011849U (en) * | 2012-11-13 | 2013-06-19 | 上海太阳能工程技术研究中心有限公司 | Silicon wafer defect detecting device |
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