CN201844980U - Automatic detection system of solar silicon wafer - Google Patents
Automatic detection system of solar silicon wafer Download PDFInfo
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- CN201844980U CN201844980U CN2010205188480U CN201020518848U CN201844980U CN 201844980 U CN201844980 U CN 201844980U CN 2010205188480 U CN2010205188480 U CN 2010205188480U CN 201020518848 U CN201020518848 U CN 201020518848U CN 201844980 U CN201844980 U CN 201844980U
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Abstract
The utility model relates to an automatic detection system of a solar silicon wafer, which comprises an automatic loading device, a silicon wafer detection device, an automatic unloading device and a control operation unit, wherein the automatic loading device is used for automatically loading a silicon wafer to be detected to a detection platform; the silicon wafer detection device is arranged on the detection platform and is used for detecting the silicon wafer to be detected; the automatic unloading device is used for automatically unloading the detected silicon wafer; and the control operation unit is respectively and electrically connected with the automatic loading device, the automatic unloading device and the silicon wafer detection device. According to the automatic detection system, by adopting the fully-automatic processing without manual participation, the detection result is not influenced by manual factors or environment factors and has consistency, stability and reliability; and the manual cost can be saved, the detection efficiency can be improved and the detection requirement for the silicon wafer can be completely met.
Description
Technical field
The utility model relates to a kind of automatic checkout system of solar silicon wafers, is widely used in the finished product detection of solar silicon wafers factory, the supplied materials detection of solar battery sheet factory and the foundry of photovoltaic silicon chip product and detects.
Background technology
Silicon chip production is an important step in the photovoltaic industry chain (supply chain).The silicon chip product needed is carried out many-sided Quality Detection, comprising: latent split, physical dimension, open defect resistivity and minority carrier life time etc.At home current, most silicon chip manufacturers and battery sheet factory adopt artificial sampling observation, carry out by means of simple tools.When doing the supplied materials detection, physical dimension such as length and width are to adopt slide calliper rule or similar instrument such as battery production producer.Whether thickness and TTV adopt the height measuring instrument of contact, choose 5 points and measure on silicon chip, see overproof.It then is to extract about three from a box silicon chip that open defect detects, and the range estimation outward appearance if find defective, then all detects whole box product; If out of questionly just pass through.The resistivity measurement instrument of employing contacts such as resistivity detection is inspected by random samples, and minority carrier life time is not generally examined.
The most manual type that adopts of domestic silicon chip manufacturer's shipment detection, detection method and top basic identical, difference are that silicon chip producer generally is full inspection, promptly all to do above-mentioned detection to each sheet silicon chip, artificial judge do not have defective after, count and pack shipment.Above background has reflected the current state of domestic silicon chip detection and the technology of employing, and its exists following risk or deficiency:
Sampling observation can not guarantee the product zero-fault.
Even if just shipment after the full inspection of silicon chip factory, but because the inherent shortcoming that manual detection exists, as be subjected to the influence of many physiology such as mood, sense of responsibility and psychological factor, the situation of omission and error detection usually appears.
What manual detection often adopted is the mode of contact, causes the fragmentation rate to rise easily.
Speed is very slow.
Sometimes in order to guarantee detecting reliability, adopt manually and recheck, need a large amount of staff, strengthened the cost that detects.
Artificial contact detects and can't satisfy accuracy of detection, and in thickness measure, the variation of staff dynamics can influence thickness detection limit result.
The utility model content
At the problems referred to above, the purpose of this utility model provides a kind of automatic checkout system of solar silicon wafers, and it adopts the optical detection apparatus of robotization to act on behalf of human eye and manual inspection, evades the intrinsic weak point of manual detection.
The realization the technical solution of the utility model is as follows:
The automatic checkout system of solar silicon wafers, this system comprises silicon chip to be detected is uploaded to automatic charging device on the detection platform automatically, is arranged on the silicon chip pick-up unit that on the detection platform silicon chip to be detected is detected, and the automatic automatic blanking device of downloading of the silicon chip that will detect, and the control and calculation unit that is electrically connected with automatic charging device, automatic blanking device, silicon chip pick-up unit respectively;
Described silicon chip pick-up unit comprise to the latent appearance delection device that splits subfissure detection device that situation detects, the upper and lower surface of silicon chip is detected of silicon chip, adopt the two and three dimensions Image intake device to silicon chip physical dimension and silicon warp to the silicon chip physical dimension that detects and warpage pick-up unit and resistivity pick-up unit that silicon chip resistivity is detected;
Described subfissure detection device, appearance delection device, silicon chip physical dimension and warpage pick-up unit and resistivity pick-up unit are electrically connected with control and calculation unit respectively.Each pick-up unit can work independently like this, is not subjected to the influence of other pick-up units.
Described subfissure detection device comprises the line scan camera that silicon chip is scanned, and is the near infrared backlight of line scan camera illumination, and described line scan camera is the time delay integration line scan camera.
Described appearance delection device comprises two cover vision detection systems of upper and lower settings, and described vision detection system comprises CCD profile scanner and the dark ground illumination that cooperates with the CCD profile scanner.The CCD profile scanner is to the upper and lower surface pattern imaging of silicon chip, and sends its image-forming information to this device internal processor or control and calculation unit, by this machine processor or control and calculation unit it analyzed the position of finding out defective and defective.
Described silicon chip physical dimension and warpage pick-up unit comprise a plurality of industrial cameras, and the structure light source of being made up of laser line generator that is mated.Described industrial camera is four, and the structure light source comprises three to five laser line generators.
Adopt such scheme, the automatic checkout system of solar silicon wafers is made up of many complete equipments: the feeding device of robotization, blanking device and silicon chip pick-up unit, wherein upper and lower materials device is mainly realized by linear module or similar device.And the silicon chip pick-up unit is mainly by four detection modules: latent detection, outward appearance detection, physical dimension and the warpage split detects, resistivity detects, these four pick-up units are separate, can work alone separately, the full-automatic processing do not need artificial participation, ensured the speed that detects, simultaneously also reduced artificial spoilage in the silicon chip testing process, all detections of silicon chip are all finished on a machinery and equipment.No matter the utility model is as silicon chip factory finished product detection, still is used in battery sheet factory and does the supplied materials detection, can both guarantee to the utmost that product 100% is examined entirely, the zero-fault quality.Because this equipment adopts modular design, in function combinations and configuration, can adjust in addition according to different requirements of customers.The beneficial effects of the utility model:
Satisfied the detection demand of silicon chip fully.
With respect to traditional manual detection, this equipment has had at the monolithic detection speed and has significantly improved, thereby has improved the detection efficiency of silicon chip by the gross, has also obtained guarantee qualitatively what detect simultaneously.
Ensure the reliability of testing result: because this equipment adopts full-automatic the processing, do not need artificial participation, so testing result is not subjected to artifact or Effect of Environmental, has consistance, stability and reliability.
Owing to need not manually-operated, saved cost of labor, thereby also reduced the cost that silicon chip detects.
This equipment can guarantee the detection quality of silicon chip fully, omission, false retrieval can not occur, has promoted the made in China quality image of photovoltaic industry greatly.
Description of drawings
Fig. 1 is a schematic diagram of the present utility model;
In the accompanying drawing, 1 is automatic charging device, and 2 is automatic blanking device, and 3 is subfissure detection device, and 4 is appearance delection device, and 5 is silicon chip physical dimension and warpage pick-up unit, and 6 is the resistivity pick-up unit, and 7 is the silicon chip pick-up unit, and 8 is control and calculation unit.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is further specified.
Referring to shown in Figure 1, the automatic checkout system of solar silicon wafers, in order to detect solar silicon wafers, this system comprises automatic charging device 1, automatic blanking device 2, silicon chip pick-up unit 7 and the control and calculation unit 8 that is electrically connected with automatic charging device, automatic blanking device, silicon chip pick-up unit respectively; The silicon chip pick-up unit comprises subfissure detection device 3, appearance delection device 4, silicon chip physical dimension and warpage pick-up unit 5 and resistivity pick-up unit 6; Wherein subfissure detection device, appearance delection device, silicon chip physical dimension and warpage pick-up unit and resistivity pick-up unit are electrically connected with control and calculation unit respectively.
Automatic charging device, automatic blanking device are full automatic mechanical arm, and automatic charging device can grab silicon chip to be detected on the silicon chip pick-up unit automatically; By the time after silicon chip detected and finishes, the silicon chip that automatic blanking device is just automatically finished detection took off from the silicon chip pick-up unit, is placed in the next working link.
Subfissure detection device adopts the time delay integration line scan camera that silicon chip is scanned, and to adopt near infrared backlight be that line scan camera throws light on, so that clearly obtain the latent pattern that splits in the silicon chip, and the latent drawing information that splits that will obtain sends control and calculation unit analysis to, detects the latent information of splitting by this machine processor or control and calculation unit software analysis.
Appearance delection device adopts the upper and lower surface pattern imaging of scanning machine to silicon chip, and sends its image-forming information to this machine processor or control and calculation unit, and this machine processor or control and calculation unit are analyzed the position of finding out defective and defective to it; Appearance delection device comprises two cover vision detection systems of upper and lower settings, can be clear omnibearing silicon chip be scanned, two cover vision systems all are to adopt the CCD profile scanner, cooperate again with dark ground illumination, with silicon chip upper and lower surface pattern imaging clearly, and the analysis by this machine processor or control and calculation unit, find the position that defective takes place and the type of defective.
Silicon chip physical dimension and warpage pick-up unit adopt two dimension, 3-dimensional image capturing apparatus that silicon chip is absorbed imaging, and send the image of picked-up to this machine processor or control and calculation unit is carried out the physical dimension that analytical calculation obtains silicon chip, adopt the structure light source of above-mentioned two dimension, 3-dimensional image capturing apparatus and line of engagement laser constitution, its laser rays image-forming information that collects is sent to this machine processor or control and calculation unit is carried out the angularity that analysis meter is calculated silicon chip.Silicon chip physical dimension and warpage detect, adopt the industrial camera of four five mega pixels to cooperate backlight to take pictures, the two dimensional image that gets access to is carried out analytical calculation, obtain the physical dimension of silicon chip, if it is identical with the physical dimension of setting to draw the physical dimension of silicon chip, silicon chip just enters into the next link that detects, if inequality with the physical dimension of setting, then machine will send the caution of reporting to the police.And warpage detects same four the above-mentioned industrial cameras that adopt, and the structure light source that cooperates three to five laser line generators to form, data to silicon chip are gathered, and send the laser rays image-forming information that collects to this machine processor or control and calculation unit is carried out the angularity that analysis meter is calculated silicon chip.
The resistivity pick-up unit is the method that adopts the system integration, and the resistivity detector that is about to can buy on the market is incorporated into this detection system.
Principle of work of the present utility model: silicon chip to be detected is picked and placeed on the silicon chip detection platform by full automatic feeding device, begin silicon chip concealed by subfissure detection device and split detection, if detect not by illustrating that just this silicon chip has quality problem, this product can continue the detection of following station, when by the time descending material level, blanking device just can take off it automatically and be placed into the waste product district, feeding device picks and places next silicon chip to be detected on the detection platform again and detects again, if latent split detection by enter into outward appearance and detect link, by appearance delection device silicon chip is detected, defective if any detecting equally, this product can continue the detection of following station, when by the time descending material level, automatically it is taken off by blanking device, again get next piece silicon chip to be checked by feeding device again, detecting link from first restarts to detect, if detect qualified then enter into the silicon chip physical dimension and warpage detects link, if detect defective, this product can continue the detection of following station, when by the time descending material level, just automatically it is taken off by blanking device, again get next piece silicon chip to be checked by feeding device again, detecting link from first restarts to detect, if detect qualified then enter into resistivity and detect link, as detect defective, automatically it is taken off by blanking device, again get next piece silicon chip to be checked by feeding device again, detect link from first and restart to detect, place the qualified district of product if detect qualified then it is taken off by blanking device.Wherein latent order can be adjusted according to different demands with splitting detection, outward appearance detection, silicon chip physical dimension and warpage detection and resistivity detection.
Claims (6)
1. the automatic checkout system of solar silicon wafers, it is characterized in that: this system comprises silicon chip to be detected is uploaded to automatic charging device on the detection platform automatically, is arranged on the silicon chip pick-up unit that on the detection platform silicon chip to be detected is detected, and the automatic automatic blanking device of downloading of the silicon chip that will detect, and the control and calculation unit that is electrically connected with automatic charging device, automatic blanking device, silicon chip pick-up unit respectively;
The resistivity pick-up unit that described silicon chip pick-up unit comprises the latent appearance delection device that splits subfissure detection device that situation detects, the upper and lower surface of silicon chip is detected of silicon chip, adopt silicon chip physical dimension that two dimension, 3-dimensional image capturing apparatus detect silicon chip physical dimension and silicon warp and warpage pick-up unit and silicon chip resistivity is detected;
Described subfissure detection device, appearance delection device, silicon chip physical dimension and warpage pick-up unit and resistivity pick-up unit are electrically connected with control and calculation unit respectively.
2. the automatic checkout system of solar silicon wafers according to claim 1, it is characterized in that: described subfissure detection device comprises the line scan camera that silicon chip is scanned, and is the near infrared backlight of line scan camera illumination.
3. the automatic checkout system of solar silicon wafers according to claim 2, it is characterized in that: described line scan camera is the time delay integration line scan camera.
4. the automatic checkout system of solar silicon wafers according to claim 1, it is characterized in that: described appearance delection device comprises two cover vision detection systems of upper and lower settings, and described vision detection system comprises CCD profile scanner and the dark ground illumination that cooperates with the CCD profile scanner.
5. the automatic checkout system of solar silicon wafers according to claim 1, it is characterized in that: described silicon chip physical dimension and warpage pick-up unit comprise a plurality of industrial cameras, and the structure light source of being made up of laser line generator that is mated.
6. the automatic checkout system of solar silicon wafers according to claim 5, it is characterized in that: described industrial camera is four, the structure light source comprises three to five laser line generators.
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| CN2010205188480U CN201844980U (en) | 2010-08-31 | 2010-08-31 | Automatic detection system of solar silicon wafer |
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| CN2010205188480U CN201844980U (en) | 2010-08-31 | 2010-08-31 | Automatic detection system of solar silicon wafer |
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| CN102621152A (en) * | 2012-03-28 | 2012-08-01 | 浙江工业大学 | Surface defect detecting system of crystalline silicon polished wafer |
| CN102680482A (en) * | 2012-05-31 | 2012-09-19 | 苏州晟成新能源科技有限公司 | Turnable implicit crack defect tester for display screen |
| CN102692194A (en) * | 2012-06-12 | 2012-09-26 | 保定天威英利新能源有限公司 | Bending piece detection device for battery piece |
| CN102937422A (en) * | 2012-10-30 | 2013-02-20 | 中广核太阳能开发有限公司 | Surface type detection equipment and method of solar light collecting mirror surface |
| CN103871919A (en) * | 2012-12-13 | 2014-06-18 | 苏州中导光电设备有限公司 | Solar energy silicon chip and cell sheet defect detection system |
| CN104020178A (en) * | 2014-05-08 | 2014-09-03 | 晶澳太阳能有限公司 | Light transmittance detection unit of crystalline silicon wafer defect detecting equipment |
| CN104237243A (en) * | 2013-06-19 | 2014-12-24 | 苏州矽微电子科技有限公司 | Solar silicon slice detection system and method |
| CN104251792A (en) * | 2014-08-19 | 2014-12-31 | 格力电器（合肥）有限公司 | Method for detecting dark cracks in surface mount capacitor |
| CN105071772A (en) * | 2015-08-17 | 2015-11-18 | 杨高林 | Solar cell classification test control system |
| CN105301006A (en) * | 2015-11-26 | 2016-02-03 | 深圳市捷佳伟创新能源装备股份有限公司 | Silicon chip breakage detecting device and detecting method |
| CN105352967A (en) * | 2015-11-17 | 2016-02-24 | 浙江集英工业智能机器技术有限公司 | Multi-station conveying shooting mechanism for automatic detection of soft-magnetic magnetic core |
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| CN104251792B (en) * | 2014-08-19 | 2017-01-04 | 珠海格力电器股份有限公司 | Method for detecting dark cracks in surface mount capacitor |
| CN104280616B (en) * | 2013-07-12 | 2017-03-22 | 苏州博昇科技有限公司 | Silicon wafer resistivity measurement device and method |
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| CN108010983A (en) * | 2016-10-31 | 2018-05-08 | 无锡市瑞能科技有限公司 | Cell piece based on line scanning integrates detection module |
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-
2010
- 2010-08-31 CN CN2010205188480U patent/CN201844980U/en not_active Expired - Lifetime
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| CN102621152B (en) * | 2012-03-28 | 2014-11-05 | 浙江工业大学 | Surface defect detecting system of crystalline silicon polished wafer |
| CN102621152A (en) * | 2012-03-28 | 2012-08-01 | 浙江工业大学 | Surface defect detecting system of crystalline silicon polished wafer |
| CN102680482A (en) * | 2012-05-31 | 2012-09-19 | 苏州晟成新能源科技有限公司 | Turnable implicit crack defect tester for display screen |
| CN102692194A (en) * | 2012-06-12 | 2012-09-26 | 保定天威英利新能源有限公司 | Bending piece detection device for battery piece |
| CN102692194B (en) * | 2012-06-12 | 2015-04-01 | 保定天威英利新能源有限公司 | Bending piece detection device for battery piece |
| CN102937422A (en) * | 2012-10-30 | 2013-02-20 | 中广核太阳能开发有限公司 | Surface type detection equipment and method of solar light collecting mirror surface |
| CN103871919B (en) * | 2012-12-13 | 2016-06-29 | 苏州中导光电设备有限公司 | Solar silicon wafers and defects of battery plate detection system |
| CN103871919A (en) * | 2012-12-13 | 2014-06-18 | 苏州中导光电设备有限公司 | Solar energy silicon chip and cell sheet defect detection system |
| CN104237243A (en) * | 2013-06-19 | 2014-12-24 | 苏州矽微电子科技有限公司 | Solar silicon slice detection system and method |
| CN104280616B (en) * | 2013-07-12 | 2017-03-22 | 苏州博昇科技有限公司 | Silicon wafer resistivity measurement device and method |
| CN104020178A (en) * | 2014-05-08 | 2014-09-03 | 晶澳太阳能有限公司 | Light transmittance detection unit of crystalline silicon wafer defect detecting equipment |
| CN104251792B (en) * | 2014-08-19 | 2017-01-04 | 珠海格力电器股份有限公司 | Method for detecting dark cracks in surface mount capacitor |
| CN104251792A (en) * | 2014-08-19 | 2014-12-31 | 格力电器（合肥）有限公司 | Method for detecting dark cracks in surface mount capacitor |
| CN105071772A (en) * | 2015-08-17 | 2015-11-18 | 杨高林 | Solar cell classification test control system |
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| CN105632966A (en) * | 2016-03-28 | 2016-06-01 | 成都振中电气有限公司 | Surface defect detection system of solar cell piece |
| CN105806247A (en) * | 2016-05-23 | 2016-07-27 | 南京林业大学 | Wood board warping online detection device and detection method |
| CN106124525A (en) * | 2016-08-24 | 2016-11-16 | 镇江荣德新能源科技有限公司 | A kind of crystalline silicon blocks surface grinding and defects inspecting integrated apparatus |
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| WO2018188654A1 (en) * | 2017-04-14 | 2018-10-18 | 常州亿晶光电科技有限公司 | Device and method for detecting bending and warping of silicon wafer of solar cell |
| CN106876298A (en) * | 2017-04-14 | 2017-06-20 | 常州亿晶光电科技有限公司 | Silicon chip of solar cell flexibility and angularity detection means and detection method |
| CN106876298B (en) * | 2017-04-14 | 2023-04-25 | 常州亿晶光电科技有限公司 | Device and method for detecting bending degree and warping degree of solar cell silicon wafer |
| CN108414458A (en) * | 2017-12-07 | 2018-08-17 | 岳西县海创饰品有限公司 | A kind of button detection device |
| CN108745921A (en) * | 2018-03-26 | 2018-11-06 | 江苏金晖光伏有限公司 | A kind of sorting method of inspection of diamond wire saw cut list, polysilicon chip |
| CN108389808A (en) * | 2018-04-23 | 2018-08-10 | 无锡奥特维科技股份有限公司 | Silicon chip sorting machine |
| CN108389808B (en) * | 2018-04-23 | 2024-03-01 | 无锡奥特维科技股份有限公司 | Silicon chip sorting machine |
| CN108872262A (en) * | 2018-05-08 | 2018-11-23 | 丹凤县荣毅电子有限公司 | A kind of electronic component detection method |
| CN108716895A (en) * | 2018-05-18 | 2018-10-30 | 北京锐洁机器人科技有限公司 | Desktop grade angularity scan method and equipment |
| CN109580635A (en) * | 2018-12-03 | 2019-04-05 | 高佳太阳能股份有限公司 | A kind of diamond cut silicon wafer piece thickness ununiformity reason fast determination method |
| CN110031482A (en) * | 2019-05-05 | 2019-07-19 | 苏州天准科技股份有限公司 | A kind of glass flaws detection method based on reflective structure optical illumination |
| CN110195809A (en) * | 2019-06-21 | 2019-09-03 | 东莞威森智能科技有限公司 | A kind of camera mould group, cell silicon chip defect detecting device and detection method |
| CN114184122A (en) * | 2021-12-10 | 2022-03-15 | 苏州诠泰智能装备有限公司 | Inspection process for appearance size and warping degree of electroplated copper sheet |
| CN114527131A (en) * | 2021-12-30 | 2022-05-24 | 镇江苏仪德科技有限公司 | Online detection device and detection method for internal and external defects of raw material silicon wafer |
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