CN111304740A - Epitaxial growth device and manufacturing method thereof - Google Patents
Epitaxial growth device and manufacturing method thereof Download PDFInfo
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- CN111304740A CN111304740A CN201811509469.2A CN201811509469A CN111304740A CN 111304740 A CN111304740 A CN 111304740A CN 201811509469 A CN201811509469 A CN 201811509469A CN 111304740 A CN111304740 A CN 111304740A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The invention provides an epitaxial growth device and a manufacturing method thereof, and belongs to the technical field of semiconductors. An epitaxial growth apparatus comprising: the epitaxial growth device comprises a first quartz bell jar and a funnel-shaped second quartz bell jar, wherein a reaction chamber is formed by the first quartz bell jar and the second quartz bell jar, a base for placing a silicon wafer and a base supporting frame for supporting the base are arranged inside the reaction chamber, a heating bulb for providing reaction energy is arranged outside the reaction chamber, the heating bulb comprises a first heating bulb positioned on one side of the base close to the first quartz bell jar and a second heating bulb positioned on one side of the base close to the second quartz bell jar, and the epitaxial growth device further comprises: and the light path control structure is positioned in the reaction chamber and arranged between the second heating bulb and the base, and can refract part of light rays emitted by the second heating bulb and incident into the reaction chamber through the funnel surface of the second quartz bell jar to an area far away from the center of the silicon wafer. The invention can improve the film forming uniformity of the epitaxial film.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and more particularly, to an epitaxial growth apparatus and a method for fabricating the same.
Background
Epitaxial wafers are typically obtained by growing an epitaxial thin film on a silicon wafer by chemical vapor deposition. In the epitaxial growth device, a silicon wafer is exposed to a reaction gas, and a silicon single crystal thin film is formed on the surface of the silicon wafer through a chemical vapor reaction.
As shown in fig. 1, the conventional epitaxial growth apparatus includes an upper quartz bell jar 1 and a lower quartz bell jar 6, the upper quartz bell jar 1 and the lower quartz bell jar 6 form a reaction chamber through a mounting member 3, the reaction chamber includes an air inlet and an air outlet, wherein 4 is an air flow direction, a susceptor 5 for placing a silicon wafer 2 and a susceptor support frame 7 for supporting the susceptor 5 are disposed inside the reaction chamber. Outside the reaction chamber, a heating bulb 8 is provided which is responsible for providing reaction energy, providing energy for the reaction by means of heat radiation.
The thickness of the epitaxial thin film is one of the most important technical indexes, and during the epitaxial reaction, the phenomenon of uneven film thickness often occurs due to the over-high temperature of the central region of the silicon wafer, that is, the over-high temperature of the central region of the silicon wafer causes the fast chemical reaction rate of the central region, and the generated silicon thin film is too thick or even too thick. Therefore, how to control the temperature of the central region of the silicon wafer to be too high has become a very important issue.
Disclosure of Invention
The invention aims to provide an epitaxial growth device and a manufacturing method thereof, which can improve the film forming uniformity of an epitaxial film.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, an embodiment of the present invention provides an epitaxial growth apparatus, including:
the epitaxial growth device comprises a first quartz bell jar and a funnel-shaped second quartz bell jar, wherein the first quartz bell jar and the second quartz bell jar form a reaction chamber through a mounting component, a base for placing a silicon wafer and a base supporting frame for supporting the base are arranged inside the reaction chamber, a heating bulb for providing reaction energy is arranged outside the reaction chamber, the heating bulb comprises a first heating bulb positioned on one side of the base close to the first quartz bell jar and a second heating bulb positioned on one side of the base close to the second quartz bell jar, and the epitaxial growth device further comprises:
and the light path control structure is positioned in the reaction chamber and arranged between the second heating bulb and the base, and can refract part of light rays emitted by the second heating bulb and incident into the reaction chamber through the funnel surface of the second quartz bell jar to an area far away from the center of the silicon wafer.
Further, the optical path control structure includes:
a hollow support rod;
the supporting rod comprises a supporting rod and a concave lens, wherein the concave lens is arranged at the end part of the supporting rod and connected with the supporting rod, a through hole is formed in the center of the concave lens and communicated with the inside of the supporting rod, and the aperture of the through hole is equal to the inner diameter of the supporting rod.
Further, the concave lens comprises a first surface facing the base and a second surface facing away from the base, the first surface is a concave surface recessed towards one side far away from the base, and the second surface is a concave surface recessed towards one side close to the base.
Further, the concave lens comprises a first surface facing the base and a second surface facing away from the base, the first surface is a concave surface recessed towards one side far away from the base, and the second surface is a plane.
Further, the concave lens comprises a first surface facing the base and a second surface facing away from the base, the first surface is a concave surface recessed towards one side of the base, and the second surface is a convex surface protruding towards one side of the base.
Further, the second face is attached to the funnel face.
Furthermore, the second quartz bell jar is provided with a cylindrical neck part, and a silicon wafer supporting rod is arranged in the neck part; the supporting rod is sleeved outside the silicon wafer supporting rod and located in the neck, the difference between the outer diameter of the silicon wafer supporting rod and the inner diameter of the supporting rod is not more than a first threshold value, and the difference between the outer diameter of the supporting rod and the inner diameter of the neck is not more than a second threshold value.
Further, the first threshold value is 0.5mm, and the second threshold value is 0.5 mm.
Furthermore, the second quartz bell jar is provided with a cylindrical neck part, and a silicon wafer supporting rod is arranged in the neck part; the light path control structure includes:
concave lens, concave lens's center sets up a through-hole, the silicon wafer bracing piece is located in the through-hole, concave lens include the orientation the first face of base and the second face that deviates from the base, first face is for keeping away from the sunken concave surface in base one side, the second face with the funnel face is laminated mutually.
The embodiment of the invention also provides a manufacturing method of an epitaxial growth device, the epitaxial growth device comprises a first quartz bell jar and a funnel-shaped second quartz bell jar, the first quartz bell jar and the second quartz bell jar form a reaction chamber through a mounting component, a base for placing a silicon wafer and a base support frame for supporting the base are arranged in the reaction chamber, a heating bulb for providing reaction energy is arranged outside the reaction chamber, the heating bulb comprises a first heating bulb positioned on one side of the base close to the first quartz bell jar and a second heating bulb positioned on one side of the base close to the second quartz bell jar, and the manufacturing method comprises the following steps:
and a light path control structure is formed in the reaction chamber and between the second heating bulb and the base, and the light path control structure can refract part of light rays emitted by the second heating bulb and incident into the reaction chamber through the funnel surface of the second quartz bell jar to a region far away from the center of the silicon wafer.
The embodiment of the invention has the following beneficial effects:
in the above scheme, set up the light path control structure between second heating bulb and base, the light path control structure can send the second heating bulb, at least partial light refraction to keeping away from the central zone of silicon wafer through the funnel face incident reaction chamber of second quartz bell jar, can reduce the light that shines silicon wafer central zone like this, and then reduce the central zone's of silicon wafer temperature, reduce the chemical reaction rate in this region, utilize the light path dispersion and the thermal-insulated effect of shading of light path control structure, silicon wafer inhomogeneous phenomenon of being heated has been solved, can improve epitaxial film's film forming uniformity.
Drawings
FIG. 1 is a schematic structural diagram of a conventional epitaxial growth apparatus;
FIGS. 2-4 are schematic structural diagrams of an epitaxial growth apparatus according to an embodiment of the present invention;
FIGS. 5-7 are schematic structural diagrams of an epitaxial growth apparatus according to an embodiment of the present invention;
FIGS. 8-10 are schematic structural diagrams of a triple epitaxial growth apparatus according to an embodiment of the present invention;
fig. 11 is a schematic thickness diagram of an epitaxial film formed in accordance with an embodiment of the present invention.
Reference numerals
1 Upper quartz bell jar
2 silicon wafer
3 mounting component
4 direction of air flow
5 base
6 lower quartz bell jar
7 base support frame
8 heating bulb
9 light path control structure
10 silicon wafer support rod
91 first side
92 second side
93 support rod
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
An existing epitaxial growth device is shown in fig. 1 and comprises an upper quartz bell jar 1 and a lower quartz bell jar 6, wherein the upper quartz bell jar 1 is circular, the lower quartz bell jar 6 is funnel-shaped, the upper quartz bell jar 1 and the lower quartz bell jar 6 form a reaction chamber through a mounting component 3, the reaction chamber comprises an air inlet and an air outlet, reaction gas enters from the air inlet, an epitaxial film is deposited through high-temperature chemical reaction, and generated tail gas is discharged through the air outlet, wherein 4 is the air flow direction. A susceptor 5 on which the silicon wafer 2 is placed is provided inside the reaction chamber, and the susceptor 5 is fixed and held in a horizontal state by a susceptor support frame 7. In the chemical gas phase reaction process, the base support frame 7 drives the base 5 to rotate at a constant speed through a motor. Heating bulbs 8 for providing reaction energy are arranged above the upper quartz bell jar 1 and below the lower quartz bell jar 6, and the reaction energy is provided by means of heat radiation.
The thickness of the epitaxial thin film is one of the most important technical indexes, and in the epitaxial reaction process, the funnel surface of the lower quartz bell jar 6 has the function of converging light rays and can converge the light rays emitted by the lower heating bulb 8 to the central area of the silicon wafer 2, so that the phenomenon of uneven film thickness caused by overhigh temperature of the central area of the silicon wafer occurs, namely, the temperature of the central area of the silicon wafer is overhigh, the chemical reaction rate of the area is high, and the generated silicon thin film is thicker or even thicker. Therefore, how to control the temperature of the central region of the silicon wafer to be too high has become a very important issue.
One prior art technique reduces the temperature of the central region of the silicon wafer by placing a light-blocking quartz ring under the susceptor 5, and the light emitted from the heating bulb 8 can be reflected by the light-blocking quartz ring, thereby weakening the radiant heat energy of the heating bulb 8, but this way requires a very high installation requirement for the ring. In the prior art, the light-blocking quartz ring is lapped on the base support frame 7 through three support rods, the light-blocking quartz ring is easy to incline, and if the light-blocking quartz ring inclines, more serious temperature unevenness can be caused.
In order to solve the above problems, embodiments of the present invention provide an epitaxial growth apparatus and a method for manufacturing the same, which can improve the film formation uniformity of an epitaxial thin film.
An embodiment of the present invention provides an epitaxial growth apparatus, including:
the epitaxial growth device comprises a first quartz bell jar and a funnel-shaped second quartz bell jar, wherein the first quartz bell jar and the second quartz bell jar form a reaction chamber through a mounting component, a base for placing a silicon wafer and a base supporting frame for supporting the base are arranged inside the reaction chamber, a heating bulb for providing reaction energy is arranged outside the reaction chamber, the heating bulb comprises a first heating bulb positioned on one side of the base close to the first quartz bell jar and a second heating bulb positioned on one side of the base close to the second quartz bell jar, and the epitaxial growth device further comprises:
and the light path control structure is positioned in the reaction chamber and arranged between the second heating bulb and the base, and can refract part of light rays emitted by the second heating bulb and incident into the reaction chamber through the funnel surface of the second quartz bell jar to an area far away from the center of the silicon wafer.
In this embodiment, set up the light path control structure between second heating bulb and base, the light path control structure can send the second heating bulb, at least partial light refraction to the central zone of keeping away from the silicon wafer of the funnel face incidence reaction chamber of second quartz bell jar, can reduce the light that shines silicon wafer central zone like this, and then reduce the central zone's of silicon wafer temperature, reduce the chemical reaction rate in this region, utilize the light path dispersion and the thermal-insulated effect of shading of light path control structure, silicon wafer inhomogeneous phenomenon of being heated has been solved, can improve epitaxial film's film forming uniformity.
In one embodiment, the light dispersion may be implemented by using a concave lens, and the light path control structure includes:
a hollow support rod;
the supporting rod comprises a supporting rod and a concave lens, wherein the concave lens is arranged at the end part of the supporting rod and connected with the supporting rod, a through hole is formed in the center of the concave lens and communicated with the inside of the supporting rod, and the aperture of the through hole is equal to the inner diameter of the supporting rod.
In a specific embodiment, concave lens include the orientation the first face of base and the second face that deviates from the base, the first face is to keeping away from the sunken concave surface of base one side, and the second face is to being close to the sunken concave surface of base one side, and like this, the light that the second heating bulb sent can take place twice refraction when passing through second face and first face in proper order, refracts the light that the second heating bulb sent to the central zone of keeping away from silicon wafer, has just so realized weakening of silicon wafer central zone temperature.
In a specific embodiment, the concave lens comprises a first surface facing the base and a second surface facing away from the base, the first surface is a concave surface recessed towards one side of the base, and the second surface is a plane, so that light emitted by the second heating bulb can be refracted when passing through the first surface, and the light emitted by the second heating bulb is refracted to a central area far away from a silicon wafer, so that the temperature of the central area of the silicon wafer is weakened.
In a specific embodiment, concave lens include towards the first face of base and the second face that deviates from the base, first face is to keeping away from sunken concave surface in base one side, and the second face is to keeping away from the bellied convex surface in base one side, and like this, the light that the second heating bulb sent can take place the refraction when first face is passed through, refracts the light that the second heating bulb sent to the central zone of keeping away from the silicon wafer, has just so realized weakening of silicon wafer central zone temperature.
Further, when the second surface is a convex surface protruding towards one side of the base, the second surface can be attached to the funnel surface, so that the light path control structure can be firmly fixed between the base and the second heating bulb, and the horizontal state of the concave lens is ensured.
Furthermore, the second quartz bell jar is provided with a cylindrical neck part, and a silicon wafer supporting rod is arranged in the neck part; the bracing piece cover is located outside the silicon wafer bracing piece and be located in the neck, the external diameter of silicon wafer bracing piece with the difference of the internal diameter of bracing piece is no longer than first threshold value, the external diameter of bracing piece with the difference of the internal diameter of neck is no longer than the second threshold value, like this, through the effort between silicon wafer bracing piece and the effort between bracing piece and the neck, can be fixed in between base and the second heating bulb firmly with light path control structure to guarantee that concave lens's level is placed, ensure that concave lens can disperse the light that the second heating bulb sent effectively.
Specifically, in order to ensure that the inner portion of the support rod is attached to the support rod of the silicon wafer, and the outer portion of the support rod is attached to the neck portion, the first threshold value may be 0.5mm, and the second threshold value may be 0.5 mm.
In another specific embodiment, the second quartz bell jar is provided with a cylindrical neck part, and a silicon wafer supporting rod is arranged in the neck part; the light path control structure includes:
concave lens, concave lens's center sets up a through-hole, the silicon wafer bracing piece is located in the through-hole, concave lens includes the orientation the first face of base with deviate from the second face of base, first face is for keeping away from the sunken concave surface in base one side, the second face with the funnel face is laminated mutually, and the funnel face can support concave lens effectively like this, is fixed in between base and the second heating bulb firmly concave lens to guarantee that concave lens's level is placed, ensure that concave lens can disperse the light that the second heating bulb sent effectively.
The epitaxial growth apparatus of the present invention is further described with reference to the accompanying drawings and specific embodiments:
example one
As shown in fig. 2, the epitaxial growth apparatus of the present embodiment includes an upper quartz bell jar 1 (i.e., the first quartz bell jar) and a lower quartz bell jar 6 (i.e., the second quartz bell jar), wherein the upper quartz bell jar 1 is circular, the lower quartz bell jar 6 is funnel-shaped, the upper quartz bell jar 1 and the lower quartz bell jar 6 form a reaction chamber through a mounting component 3, the reaction chamber includes an air inlet and an air outlet, reaction gas enters from the air inlet, an epitaxial thin film is deposited through a high temperature chemical reaction, and generated tail gas is exhausted through the air outlet, wherein 4 is an air flow direction. A susceptor 5 on which the silicon wafer 2 is placed is provided inside the reaction chamber, and the susceptor 5 is fixed and held in a horizontal state by a susceptor support frame 7. In the chemical gas phase reaction process, the base support frame 7 drives the base 5 to rotate at a constant speed through a motor. Heating bulbs 8 for providing reaction energy are arranged above the upper quartz bell jar 1 and below the lower quartz bell jar 6, and the reaction energy is provided by means of heat radiation.
In this embodiment, the diameter of the silicon wafer 2 is 300mm, and the reaction gas SiHCl is used at a high temperature of 1100 ℃ to 1150 DEG C3An epitaxial film is produced.
In this embodiment, a light path control structure 9 is provided in the reaction chamber, and the light path control structure 9 is close to the heating bulb 8 (i.e., the second heating bulb described above) on the lower quartz bell jar 6 side.
As shown in fig. 3 and 4, the optical path control structure 9 includes a support rod 93 and a concave lens located at an end of the support rod 93, the concave lens includes a first surface 91 close to the base 5 and a second surface 92 far away from the base 5, the support rod 93 is a hollow structure, a through hole is provided at a center of the concave lens, the through hole is communicated with an inside of the support rod 93, and an aperture of the through hole is equal to an inner diameter of the support rod 93.
As shown in fig. 4, the first surface 91 is a concave surface recessed toward the side away from the susceptor 5, and the second surface 92 is a concave surface recessed toward the side close to the susceptor 5, so that the light emitted from the heating bulb 8 can be refracted twice when passing through the second surface 92 and the first surface 91 in sequence, and the light emitted from the heating bulb 8 is refracted to the central region away from the silicon wafer 2, thereby achieving the reduction of the temperature of the central region of the silicon wafer 2. In addition, because the concave lens has a certain thickness, heat can be blocked, and the larger the thickness of the concave lens is, the larger the heat is blocked.
As shown in fig. 2, the lower quartz bell jar 6 has a cylindrical neck portion, a silicon wafer support rod 10 is disposed in the neck portion, the support rod 93 is sleeved outside the silicon wafer support rod 10 and is located in the neck portion, in order to make the support rod 93 and the neck portion and the silicon wafer support rod 10 fit, the difference between the outer diameter of the silicon wafer support rod 10 and the inner diameter of the support rod 93 is not more than 0.5mm, and the difference between the outer diameter of the support rod 93 and the inner diameter of the neck portion is not more than 0.5mm, so that the light path control structure can be firmly fixed between the base 5 and the heating bulb 8 by the acting force between the silicon wafer support rod 10 and the support rod 93 and the acting force between the support rod 93 and the neck portion, and the concave lens can be horizontally placed, thereby ensuring that the concave lens.
Fig. 11 is a film thickness distribution curve of an epitaxial thin film formed on a silicon wafer 2 in a diameter direction of the silicon wafer, in which a solid line is the film thickness distribution curve of the epitaxial thin film prepared in the prior art, and a dotted line is the film thickness distribution curve of the epitaxial thin film prepared in this embodiment, it can be seen that the technical solution of this embodiment can effectively reduce the thickness of the epitaxial thin film in the central region of the silicon wafer 2, can reduce the thickness of the epitaxial thin film in the central region of the silicon wafer 2 by 20nm, and effectively improve the film formation uniformity of the epitaxial thin film.
In the measurement of the thickness of the epitaxial film, the thickness of the epitaxial film may be measured by fourier infrared spectroscopy (FTIR) using a QS4300 machine from Nanometrics.
Example two:
as shown in fig. 5, the epitaxial growth apparatus of the present embodiment includes an upper quartz bell jar 1 (i.e., the first quartz bell jar) and a lower quartz bell jar 6 (i.e., the second quartz bell jar), wherein the upper quartz bell jar 1 is circular, the lower quartz bell jar 6 is funnel-shaped, the upper quartz bell jar 1 and the lower quartz bell jar 6 form a reaction chamber through a mounting component 3, the reaction chamber includes an air inlet and an air outlet, reaction gas enters from the air inlet, an epitaxial thin film is deposited through a high temperature chemical reaction, and generated tail gas is exhausted through the air outlet, wherein 4 is an air flow direction. A susceptor 5 on which the silicon wafer 2 is placed is provided inside the reaction chamber, and the susceptor 5 is fixed and held in a horizontal state by a susceptor support frame 7. In the chemical gas phase reaction process, the base support frame 7 drives the base 5 to rotate at a constant speed through a motor. Heating bulbs 8 for providing reaction energy are arranged above the upper quartz bell jar 1 and below the lower quartz bell jar 6, and the reaction energy is provided by means of heat radiation.
In this embodiment, the diameter of the silicon wafer 2 is 300mm, and the reaction gas SiHCl is used at a high temperature of 1100 ℃ to 1150 DEG C3An epitaxial film is produced.
In this embodiment, a light path control structure 9 is provided in the reaction chamber, and the light path control structure 9 is close to the heating bulb 8 (i.e., the second heating bulb described above) on the lower quartz bell jar 6 side.
As shown in fig. 6 and 7, the optical path control structure 9 includes a support rod 93 and a concave lens located at an end of the support rod 93, the concave lens includes a first surface 91 close to the base 5 and a second surface 92 far away from the base 5, the support rod 93 is a hollow structure, a through hole is provided at a center of the concave lens, the through hole is communicated with an inside of the support rod 93, and an aperture of the through hole is equal to an inner diameter of the support rod 93.
As shown in fig. 7, the first surface 91 is a concave surface recessed to the side away from the susceptor 5, and the second surface 92 is a flat surface, so that the light emitted from the heating bulb 8 is refracted when passing through the first surface 91, and the light emitted from the heating bulb 8 is refracted to the central area away from the silicon wafer 2, thereby achieving the temperature reduction of the central area of the silicon wafer 2. In addition, because the concave lens has a certain thickness, heat can be blocked, and the larger the thickness of the concave lens is, the larger the heat is blocked.
As shown in fig. 5, the lower quartz bell jar 6 has a cylindrical neck portion, a silicon wafer support rod 10 is disposed in the neck portion, the support rod 93 is sleeved outside the silicon wafer support rod 10 and is located in the neck portion, in order to make the support rod 93 and the neck portion and the silicon wafer support rod 10 fit, the difference between the outer diameter of the silicon wafer support rod 10 and the inner diameter of the support rod 93 is not more than 0.5mm, and the difference between the outer diameter of the support rod 93 and the inner diameter of the neck portion is not more than 0.5mm, so that the light path control structure can be firmly fixed between the base 5 and the heating bulb 8 by the acting force between the silicon wafer support rod 10 and the support rod 93 and the acting force between the support rod 93 and the neck portion, and the concave lens can be horizontally placed, thereby ensuring that the concave lens.
Example three:
as shown in fig. 8, the epitaxial growth apparatus of the present embodiment includes an upper quartz bell jar 1 (i.e., the first quartz bell jar) and a lower quartz bell jar 6 (i.e., the second quartz bell jar), wherein the upper quartz bell jar 1 is circular, the lower quartz bell jar 6 is funnel-shaped, the upper quartz bell jar 1 and the lower quartz bell jar 6 form a reaction chamber through a mounting component 3, the reaction chamber includes an air inlet and an air outlet, reaction gas enters from the air inlet, an epitaxial thin film is deposited through a high temperature chemical reaction, and generated tail gas is exhausted through the air outlet, wherein 4 is an air flow direction. A susceptor 5 on which the silicon wafer 2 is placed is provided inside the reaction chamber, and the susceptor 5 is fixed and held in a horizontal state by a susceptor support frame 7. In the chemical gas phase reaction process, the base support frame 7 drives the base 5 to rotate at a constant speed through a motor. Heating bulbs 8 for providing reaction energy are arranged above the upper quartz bell jar 1 and below the lower quartz bell jar 6, and the reaction energy is provided by means of heat radiation.
In this embodiment, the diameter of the silicon wafer 2 is 300mm, and the reaction gas SiHCl is used at a high temperature of 1100 ℃ to 1150 DEG C3An epitaxial film is produced.
In this embodiment, a light path control structure 9 is provided in the reaction chamber, and the light path control structure 9 is close to the heating bulb 8 (i.e., the second heating bulb described above) on the lower quartz bell jar 6 side.
As shown in fig. 9 and 10, the optical path control structure 9 includes a support rod 93 and a concave lens located at an end of the support rod 93, the concave lens includes a first surface 91 close to the base 5 and a second surface 92 far away from the base 5, the support rod 93 is a hollow structure, a through hole is provided at a center of the concave lens, the through hole is communicated with an inside of the support rod 93, and an aperture of the through hole is equal to an inner diameter of the support rod 93.
As shown in fig. 10, the first surface 91 is a concave surface recessed toward the side away from the susceptor 5, and the second surface 92 is a convex surface protruding toward the side away from the susceptor 5, so that the light emitted from the heating bulb 8 is refracted when passing through the first surface 91, and the light emitted from the heating bulb 8 is refracted to the central area away from the silicon wafer 2, thereby achieving the temperature reduction of the central area of the silicon wafer 2. In addition, because the concave lens has a certain thickness, heat can be blocked, and the larger the thickness of the concave lens is, the larger the heat is blocked.
As shown in fig. 8, the lower quartz bell jar 6 has a cylindrical neck portion, a silicon wafer support rod 10 is disposed in the neck portion, the support rod 93 is sleeved outside the silicon wafer support rod 10 and is located in the neck portion, in order to make the support rod 93 and the neck portion and the silicon wafer support rod 10 fit, the difference between the outer diameter of the silicon wafer support rod 10 and the inner diameter of the support rod 93 is not more than 0.5mm, and the difference between the outer diameter of the support rod 93 and the inner diameter of the neck portion is not more than 0.5mm, so that the light path control structure can be firmly fixed between the base 5 and the heating bulb 8 by the acting force between the silicon wafer support rod 10 and the support rod 93 and the acting force between the support rod 93 and the neck portion, and the concave lens can be horizontally placed, thereby ensuring that the concave lens.
Further, as shown in fig. 8, the second surface 92 matches the shape of the funnel surface of the lower quartz bell jar 6, so that the second surface 92 can be attached to the funnel surface of the lower quartz bell jar 6, and thus the funnel surface can provide support for the concave lens, help to firmly fix the optical path control structure at the neck of the base 5, and ensure the horizontal state of the concave lens.
In this embodiment, since the second surface 92 is a convex surface and has the function of converging light, it should be noted that the curvatures of the first surface 91 and the second surface 92 are adjusted to ensure that the light emitted from the heating bulb 8 can be refracted to the central area far away from the silicon wafer 2 after passing through the second surface 92 and the first surface 91 in sequence.
Further, on the basis of the third embodiment, the optical path control structure may be further improved, the support rod 93 of the optical path control structure is removed, and only the concave lens is remained. Because the second surface 92 of the concave lens can be attached to the funnel surface of the lower quartz bell jar 6, the concave lens can be effectively supported only by the funnel surface, the concave lens is firmly fixed between the base 5 and the heating bulb 8, and the horizontal arrangement of the concave lens is ensured, so that the supporting rod 93 can be omitted, the structure of the light path control structure is simplified, and the cost of the light path control structure is reduced.
The embodiment of the invention also provides a manufacturing method of an epitaxial growth device, the epitaxial growth device comprises a first quartz bell jar and a funnel-shaped second quartz bell jar, the first quartz bell jar and the second quartz bell jar form a reaction chamber through a mounting component, a base for placing a silicon wafer and a base support frame for supporting the base are arranged in the reaction chamber, a heating bulb for providing reaction energy is arranged outside the reaction chamber, the heating bulb comprises a first heating bulb positioned on one side of the base close to the first quartz bell jar and a second heating bulb positioned on one side of the base close to the second quartz bell jar, and the manufacturing method comprises the following steps:
and a light path control structure is formed in the reaction chamber and between the second heating bulb and the base, and the light path control structure can refract at least part of light rays emitted by the second heating bulb and incident into the reaction chamber through the funnel surface of the second quartz bell jar to a central area far away from the silicon wafer.
In this embodiment, form the light path control structure between second heating bulb and base, the light path control structure can send the second heating bulb, at least some light refraction to the central zone of keeping away from the silicon wafer of the funnel face incidence reaction chamber of second quartz bell jar, can reduce the light that shines silicon wafer central zone like this, and then reduce the central zone's of silicon wafer temperature, reduce the chemical reaction rate in this region, utilize the light path dispersion and the thermal-insulated effect of shading of light path control structure, silicon wafer inhomogeneous phenomenon of being heated has been solved, can improve epitaxial film's film forming uniformity.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. An epitaxial growth apparatus comprising:
the epitaxial growth device comprises a first quartz bell jar and a funnel-shaped second quartz bell jar, wherein the first quartz bell jar and the second quartz bell jar form a reaction chamber through a mounting component, a base for placing a silicon wafer and a base supporting frame for supporting the base are arranged inside the reaction chamber, a heating bulb for providing reaction energy is arranged outside the reaction chamber, the heating bulb comprises a first heating bulb positioned on one side of the base close to the first quartz bell jar and a second heating bulb positioned on one side of the base close to the second quartz bell jar, and the epitaxial growth device is characterized by further comprising:
and the light path control structure is positioned in the reaction chamber and arranged between the second heating bulb and the base, and can refract part of light rays emitted by the second heating bulb and incident into the reaction chamber through the funnel surface of the second quartz bell jar to an area far away from the center of the silicon wafer.
2. Epitaxial growth apparatus according to claim 1, characterized in that the optical path control structure comprises:
a hollow support rod;
the supporting rod comprises a supporting rod and a concave lens, wherein the concave lens is arranged at the end part of the supporting rod and connected with the supporting rod, a through hole is formed in the center of the concave lens and communicated with the inside of the supporting rod, and the aperture of the through hole is equal to the inner diameter of the supporting rod.
3. Epitaxial growth apparatus according to claim 2,
the concave lens comprises a first face and a second face, the first face faces the base, the second face deviates from the base, the first face is a concave face which is recessed towards one side of the base, and the second face is a concave face which is recessed towards one side of the base.
4. Epitaxial growth apparatus according to claim 2,
the concave lens comprises a first surface facing the base and a second surface facing away from the base, the first surface is a concave surface recessed towards one side of the base, and the second surface is a plane.
5. Epitaxial growth apparatus according to claim 2,
concave lens include the orientation the first face of base and deviate from the second face of base, first face is to keeping away from the sunken concave surface in base one side, and the second face is to keeping away from the bellied convex surface in base one side.
6. Epitaxial growth device according to claim 5, characterized in that the second face is conformed to the funnel face.
7. The epitaxial growth apparatus of claim 2, wherein the second quartz bell jar has a cylindrical neck in which a silicon wafer support rod is disposed; the supporting rod is sleeved outside the silicon wafer supporting rod and located in the neck, the difference between the outer diameter of the silicon wafer supporting rod and the inner diameter of the supporting rod is not more than a first threshold value, and the difference between the outer diameter of the supporting rod and the inner diameter of the neck is not more than a second threshold value.
8. Epitaxial growth device according to claim 7, characterized in that the first threshold is 0.5mm and the second threshold is 0.5 mm.
9. The epitaxial growth apparatus of claim 1, wherein the second quartz bell jar has a cylindrical neck portion in which a silicon wafer support rod is disposed; the light path control structure includes:
concave lens, concave lens's center sets up a through-hole, the silicon wafer bracing piece is located in the through-hole, concave lens include the orientation the first face of base and the second face that deviates from the base, first face is for keeping away from the sunken concave surface in base one side, the second face with the funnel face is laminated mutually.
10. A method for manufacturing an epitaxial growth device, the epitaxial growth device comprising a first quartz bell jar and a funnel-shaped second quartz bell jar, the first quartz bell jar and the second quartz bell jar forming a reaction chamber through a mounting component, a base for placing a silicon wafer and a base support frame for supporting the base are arranged inside the reaction chamber, a heating bulb for providing reaction energy is arranged outside the reaction chamber, the heating bulb comprises a first heating bulb positioned on one side of the base close to the first quartz bell jar and a second heating bulb positioned on one side of the base close to the second quartz bell jar, the method for manufacturing the epitaxial growth device comprises the following steps:
and a light path control structure is formed in the reaction chamber and between the second heating bulb and the base, and the light path control structure can refract part of light rays emitted by the second heating bulb and incident into the reaction chamber through the funnel surface of the second quartz bell jar to a region far away from the center of the silicon wafer.
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