CN116497344A - Susceptor support structure and epitaxial growth apparatus - Google Patents
Susceptor support structure and epitaxial growth apparatus Download PDFInfo
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- CN116497344A CN116497344A CN202310467893.XA CN202310467893A CN116497344A CN 116497344 A CN116497344 A CN 116497344A CN 202310467893 A CN202310467893 A CN 202310467893A CN 116497344 A CN116497344 A CN 116497344A
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- 239000012780 transparent material Substances 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 63
- 230000005855 radiation Effects 0.000 description 27
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a base support structure and epitaxial growth equipment, and belongs to the technical field of semiconductor manufacturing. The base support structure is used for supporting a base in epitaxial growth equipment and comprises a support column and a conical support curved surface which extends outwards from the support column, and the support curved surface is made of transparent materials. The technical scheme of the invention can improve the uniformity of the resistivity of the surface of the epitaxial wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a base support structure and epitaxial growth equipment.
Background
Epitaxial growth refers to a process of growing a single crystal thin film (with a crystal orientation identical to that of a substrate) on a single crystal silicon substrate by an epitaxial (epi) technique. The whole production process of the epitaxial wafer comprises five steps of crystal growth (drawing a silicon crystal rod by a polycrystalline silicon material), molding (slicing grinding), polishing (double-sided polishing), cleaning (removing surface particles, metal ions and organic matters), and epitaxy (vapor deposition), wherein the epitaxy is taken as the last important step, and the crystal property, the grown-in defect, the resistivity, the flatness and the like of the wafer can be improved.
In general, the epitaxial growth apparatus includes a reaction chamber surrounded by an upper quartz bell jar and a lower quartz bell jar, and a susceptor for carrying a wafer is disposed in the reaction chamber, and a susceptor support rod for supporting the susceptor is disposed in the reaction chamber, where the susceptor support rod plays a role in fixing the susceptor and driving the susceptor to rotate, so that epitaxial growth can be uniformly performed on the wafer. And a heating bulb which is responsible for providing reaction energy is arranged outside the quartz bell jar, and heat is provided for the reaction in a heat radiation mode.
In the prior art, due to the existence of the base support rod, the temperature of the part of the base shielded by the base support rod and the temperature of other parts are different, so that the overall temperature of the base is uneven, the uniformity of the resistivity of the epitaxial layer on the surface of the epitaxial wafer is poor, and the uniformity of the resistivity of the epitaxial layer can directly influence the electrical property of a semiconductor.
Disclosure of Invention
In order to solve the technical problems, the invention provides a susceptor supporting structure and epitaxial growth equipment, which can improve the uniformity of the resistivity of an epitaxial layer.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the invention is as follows:
the utility model provides a base bearing structure for support the base in the epitaxial growth equipment, base bearing structure includes the support column, and by the support curved surface of the toper of support column outwards extension, the support curved surface adopts transparent material.
In some embodiments, the thickness of the support curve is gradually reduced in a direction approaching the support column.
In some embodiments, the thickness of the portion of the support curved surface adjacent to the support column is 2-3mm;
the thickness of the part of the supporting curved surface close to the base is 4-5mm.
In some embodiments, the radius of curvature of the support curve is 160-180mm and the angle is 130 ° -150 °.
In some embodiments, the support curved surface is the same material as the support column.
In some embodiments, the supporting curved surface is made of quartz.
In some embodiments, the central axis of the support curved surface is on the same line as the axis of the support column.
In some embodiments, the base support structure further comprises:
the base support pin is arranged at the end part of the support curved surface and used for supporting the base, and the extending direction of the base support pin is the same as that of the support column.
The embodiment of the invention also provides epitaxial growth equipment, which comprises:
a reaction chamber formed by surrounding two quartz bell-jars which are oppositely arranged;
the base is positioned in the reaction chamber and used for bearing a wafer;
a heating structure for providing heat to the reaction chamber;
the base support structure is described above.
In some embodiments, the heating structure includes an upper lamp module and a lower lamp module, the lower lamp module being disposed on a side of the support surface away from the base.
The beneficial effects of the invention are as follows:
in this embodiment, the base support structure supports the base through the planar support curved surface, when epitaxial growth is performed, the heat radiation generated by the lower lamp module group provides heat for epitaxial growth through the support curved surface, and because the support curved surface adopts transparent materials, reflection and refraction of heat generated by the lower lamp module group can be reduced, so that as much heat as possible reaches the central area of the base, the temperature of the central position of the wafer borne by the base is ensured, the temperature of the central position of the wafer tends to be consistent with the temperature of the edge position, and the uniformity of the resistivity of the epitaxial layer grown on the wafer is improved.
Drawings
Fig. 1 is a schematic view showing the structure of a related art epitaxial growth apparatus;
FIG. 2 is a graph showing the resistivity distribution of an epitaxial layer of an epitaxial wafer prepared in the related art;
FIG. 3 is a graph showing resistivity data at 35 points in the diameter direction of an epitaxial layer of an epitaxial wafer prepared in the related art;
FIG. 4 is a schematic view showing the structure of an epitaxial growth apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a support curve according to an embodiment of the present invention.
Reference numerals
1. Upper quartz bell jar
2. Lower quartz bell jar
3. Halogen lamp
4. Support column
5. Preheating ring
06. Support arm
6. Supporting curved surface
7. Air outlet
8. Base seat
9. Air inlet
10. Wafer with a plurality of wafers
11. Process gas
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
Fig. 1 shows a schematic structure of an epitaxial growth apparatus, which includes an upper quartz bell jar 1, a lower quartz bell jar 2, a halogen lamp 3, a support column 4, a preheating ring 5, a support arm 06, an air outlet 7, a susceptor 8, and an air inlet 9, as shown in fig. 1. The structure inside that upper portion quartz bell jar 1 and lower part quartz bell jar 2 are constituteed is provided with the base 8 that is used for placing wafer 10, support arm 06 and wafer bracing piece, and wherein, support arm 06 plays fixed base 8 and drives the pivoted effect of base 8 to make epitaxial growth can evenly go on wafer 10. Outside the quartz bell jar, a heating module for providing reaction energy is arranged, and the heating module comprises a halogen lamp 3 for providing heat for the reaction in a heat radiation mode. During epitaxial growth, a process gas 11 is introduced into the quartz bell jar, and a chemical vapor deposition reaction is performed on the wafer 10 to produce an epitaxial wafer.
During epitaxial growth, the uniformity of resistivity can directly affect the electrical properties of the semiconductor. The magnitude of the resistivity is primarily dependent on temperature, pressure and doping concentration. Therefore, the uniformity of the temperature distribution greatly influences the uniformity of the resistivity, and the higher the temperature, the smaller the resistivity, and conversely, the lower the temperature, the larger the resistivity under the condition that other process parameters are kept consistent.
As shown in fig. 1, in the conventional epitaxial growth apparatus, when light generated from the halogen lamp 3 passes through the support arms 06, a part of the light passes through gaps between the support arms 06 to reach the susceptor 8, and a part of the light is reflected or refracted by the support arms 06 and cannot reach the susceptor 8. In this way, due to the existence of the supporting arm 06, a difference is generated between the temperature of the part of the base 8 shielded by the supporting arm 06 and the temperature of other parts, the temperature of the part of the base 8 shielded by the supporting arm 06 is lower than that of other parts, so that the temperature of the whole base 8 is uneven, the wafer 10 carried by the base 8 is heated unevenly, the resistivity near the wafer R/2 is larger, and the uniformity of the surface resistivity of the epitaxial wafer is poor. That is, the support arm 06 affects the distribution of the thermal field, ultimately resulting in differences in the resistivity of the epitaxial layers. Fig. 2 shows a schematic diagram of the resistivity distribution of the epitaxial layer of the epitaxial wafer prepared in the related art, wherein the diameter of the epitaxial layer is 300nm, and the regions with relatively dark colors are apparent in the figure, and correspond to the positions of the support arms 06, and the resistivity of the epitaxial layer in the regions is relatively high.
Fig. 3 is a schematic view showing resistivity data at 35 points in the diameter direction of an epitaxial layer of an epitaxial wafer prepared in the related art. It can be seen that the resistivity is higher in the R/2 region (-100 mm to 100 mm) shielded by the support arm 06.
The invention provides a susceptor support structure and epitaxial growth equipment, which can improve the uniformity of the resistivity of an epitaxial layer.
An embodiment of the present invention provides a susceptor supporting structure for supporting a susceptor in an epitaxial growth apparatus, as shown in fig. 4, where the susceptor supporting structure includes a support column 4 and a tapered support curved surface 6 extending outward from the support column 4, and the support curved surface 6 is made of a transparent material.
In this embodiment, in order to reduce the influence of the support arm to the distribution of thermal field, become the support curved surface with the 3 support arms of radial distribution before, the base bearing structure supports the base through planar support curved surface, when carrying out epitaxial growth, the thermal radiation that lower lamp module group produced provides heat for epitaxial growth through the support curved surface, because the support curved surface adopts transparent material, can reduce reflection and refraction to the heat that lower lamp module group produced, make as much heat as possible reach the base central region, guarantee the temperature of the central point of the wafer that the base bore, make the temperature of the central point of wafer and the temperature of marginal position tend to unanimity, and then improve the homogeneity of epitaxial layer resistivity that grows on the wafer. Wherein, when the base support structure supports the base 8, the base 8 is positioned at a side of the support curved surface 6 away from the support column 4.
When the structure shown in fig. 1 is adopted, the heat conduction mode from the heat radiation generated by the lower lamp module to the center of the wafer is as follows: air-three supporting arms made of quartz material-graphite base-wafer center; the heat conduction mode from the heat radiation generated by the lower lamp module to the edge of the wafer is as follows: air-graphite susceptor-wafer edge. When the heat radiation generated by the lower lamp module passes through the three supporting arms, a part of the heat radiation can not reach the center of the wafer, so that the wafer is heated unevenly.
In this embodiment, after the supporting curved surface is used to support the base, the heat conduction mode from the heat radiation generated by the lower lamp module to the center of the wafer is as follows: air-supporting curved surface-graphite base-wafer center; the heat conduction mode from the heat radiation generated by the lower lamp module to the edge of the wafer is as follows: air-supporting curved surface-graphite base-wafer edge. It can be seen that the design of the supporting curved surface changes the heat conduction mode from the heat radiation generated by the lower lamp module to the edge of the wafer, so that the heat conduction mode from the heat radiation generated by the lower lamp module to the edge of the wafer is consistent with the heat conduction mode from the heat radiation generated by the lower lamp module to the center of the wafer, the wafer is heated uniformly, and the uniformity of the resistivity of the epitaxial layer growing on the wafer is improved.
In this embodiment, as shown in FIG. 5, the radius of curvature of the supporting curved surface 6 is 1/R, and the angle is θ.
In some embodiments, the thickness of the support curved surface 6 gradually decreases in a direction approaching the support column. In this way, the reflection and refraction of the heat reaching the central area of the wafer by the supporting curved surface 6 can be further reduced, and the heat radiation of the central area of the wafer can be further enhanced, so that the temperature of the edge of the wafer is consistent with that of the central area, and the optimal resistivity uniformity is achieved.
In this embodiment, the supporting curved surface 6 and the supporting column 4 are made of the same material, and may be made of quartz, and the supporting curved surface 6 and the supporting column 4 are made of the same material, which is favorable for keeping the thermal field uniform.
The greater the thickness of the supporting curved surface 6 is, the more favorable is the structural strength of the supporting curved surface 6 ensured, but the thickness of the supporting curved surface 6 is too great, and the heat radiation of the heating module is blocked to influence the heating efficiency of the heating module, preferably, the thickness of the supporting curved surface 6 is 2 mm-5 mm, so that the structural strength of the supporting curved surface 6 can be ensured, and the thermal field efficiency of the heating module can be ensured.
In a specific example, as shown in fig. 5, h is the thickness of the supporting curved surface 6 near the supporting column, and the value of h may be 2-3mm; h is the thickness of the supporting curved surface 6 close to the base, and the value of H can be 4-5mm, so that the reflection and refraction of the supporting curved surface 6 to the heat reaching the central area of the wafer can be reduced, the heat radiation of the central area of the wafer can be further enhanced, the temperature of the edge of the wafer is consistent with that of the central area of the wafer, and the optimal resistivity uniformity is achieved.
In some embodiments, the radius of curvature R of the support curve is 160-180mm and the angle θ is 130-150.
In some embodiments, the central axis of the supporting curved surface 6 and the axis of the supporting column 4 are located on the same straight line, so that when the wafer is carried by the base, the center of the wafer can be ensured to be located on the central axis of the supporting curved surface 6, thereby ensuring that the wafer is heated uniformly during epitaxial growth, and further improving the uniformity of the resistivity of the epitaxial layer of the epitaxial wafer.
In some embodiments, the base support structure further comprises:
and the base support pin 12 is arranged at the end part of the support curved surface 6 and used for supporting a base, and the extending direction of the base support pin 12 is the same as that of the support column 4. The material of the base support pin 12 can be the same as that of the support column 4 and the support curved surface 6, and is made of quartz material.
The embodiment of the invention also provides epitaxial growth equipment, which comprises:
a reaction chamber formed by surrounding two quartz bell-jars which are oppositely arranged;
the base is positioned in the reaction chamber and used for bearing a wafer;
a heating structure for providing heat to the reaction chamber;
the base support structure is described above.
In this embodiment, the supporting curved surface of the base supporting structure may cover the entire base, i.e. the orthographic projection of the base on the horizontal plane is located in the orthographic projection of the supporting curved surface on the horizontal plane. When epitaxial growth is carried out, heat radiation generated by the lower lamp module supplies heat for epitaxial growth through the supporting curved surface, and the supporting curved surface is made of transparent materials, so that reflection and refraction of heat generated by the lower lamp module can be reduced, as much as possible, the heat reaches the center area of the base, the temperature of the center position of the wafer borne by the base is ensured, the temperature of the center position of the wafer and the temperature of the edge position tend to be consistent, and the uniformity of the resistivity of an epitaxial layer grown on the wafer is improved.
In some embodiments, the heating structure includes an upper lamp module and a lower lamp module, the lower lamp module being disposed on a side of the support surface away from the base. When epitaxial growth is carried out, heat radiation generated by the lower lamp module group provides heat for the epitaxial growth through the supporting curved surface.
When the structure shown in fig. 1 is adopted, the heat conduction mode from the heat radiation generated by the lower lamp module to the center of the wafer is as follows: air-three supporting arms made of quartz material-graphite base-wafer center; the heat conduction mode from the heat radiation generated by the lower lamp module to the edge of the wafer is as follows: air-graphite susceptor-wafer edge. When the heat radiation generated by the lower lamp module passes through the three supporting arms, a part of the heat radiation can not reach the center of the wafer, so that the wafer is heated unevenly.
In this embodiment, after the supporting curved surface is used to support the base, the heat conduction mode from the heat radiation generated by the lower lamp module to the center of the wafer is as follows: air-supporting curved surface-graphite base-wafer center; the heat conduction mode from the heat radiation generated by the lower lamp module to the edge of the wafer is as follows: air-supporting curved surface-graphite base-wafer edge. It can be seen that the design of the supporting curved surface changes the heat conduction mode from the heat radiation generated by the lower lamp module to the edge of the wafer, so that the heat conduction mode from the heat radiation generated by the lower lamp module to the edge of the wafer is consistent with the heat conduction mode from the heat radiation generated by the lower lamp module to the center of the wafer, the wafer is heated uniformly, and the uniformity of the resistivity of the epitaxial layer growing on the wafer is improved.
In this specification, all embodiments are described in a progressive manner, and identical and similar parts of the embodiments are all referred to each other, and each embodiment is mainly described in a different way from other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is relatively simple, and the relevant points are found in the section of the product embodiments.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In the description of the above embodiments, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A susceptor support structure for supporting a susceptor in an epitaxial growth apparatus, characterized in that,
the base supporting structure comprises a supporting column and a conical supporting curved surface which extends outwards from the supporting column, and the supporting curved surface is made of transparent materials.
2. The base support structure of claim 1 wherein the thickness of the support curve tapers in a direction toward the support post.
3. The base support structure of claim 1 wherein,
the thickness of the part of the supporting curved surface, which is close to the supporting column, is 2-3mm;
the thickness of the part of the supporting curved surface close to the base is 4-5mm.
4. The base support structure of claim 1 wherein the radius of curvature of the support curve is 160-180mm and the angle is 130 ° -150 °.
5. The base support structure of claim 1 wherein the support curve is the same material as the support column.
6. The base support structure of claim 5, wherein the support curve is quartz.
7. The base support structure of claim 1 wherein the central axis of the support curve is collinear with the axis of the support column.
8. The base support structure of claim 1, further comprising:
the base support pin is arranged at the end part of the support curved surface and used for supporting the base, and the extending direction of the base support pin is the same as that of the support column.
9. An epitaxial growth apparatus, comprising:
a reaction chamber formed by surrounding two quartz bell-jars which are oppositely arranged;
the base is positioned in the reaction chamber and used for bearing a wafer;
a heating structure for providing heat to the reaction chamber;
and the base support structure of any one of claims 1-8.
10. The epitaxial growth apparatus of claim 9, wherein,
the heating structure comprises an upper lamp module and a lower lamp module, and the lower lamp module is arranged on one side of the supporting curved surface, which is far away from the base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310467893.XA CN116497344A (en) | 2023-04-27 | 2023-04-27 | Susceptor support structure and epitaxial growth apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310467893.XA CN116497344A (en) | 2023-04-27 | 2023-04-27 | Susceptor support structure and epitaxial growth apparatus |
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|---|---|
| CN116497344A true CN116497344A (en) | 2023-07-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096073A (en) * | 2023-10-16 | 2023-11-21 | 凯德芯贝(沈阳)石英有限公司 | Vapor deposition quartz frame for semiconductor chip and preparation and use methods thereof |
-
2023
- 2023-04-27 CN CN202310467893.XA patent/CN116497344A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096073A (en) * | 2023-10-16 | 2023-11-21 | 凯德芯贝(沈阳)石英有限公司 | Vapor deposition quartz frame for semiconductor chip and preparation and use methods thereof |
| CN117096073B (en) * | 2023-10-16 | 2023-12-19 | 凯德芯贝(沈阳)石英有限公司 | Vapor deposition quartz frame for semiconductor chip and preparation and use methods thereof |
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