CN113604871B - Base support frame, device and method for epitaxial growth of silicon wafer - Google Patents
Base support frame, device and method for epitaxial growth of silicon wafer Download PDFInfo
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- CN113604871B CN113604871B CN202110912704.6A CN202110912704A CN113604871B CN 113604871 B CN113604871 B CN 113604871B CN 202110912704 A CN202110912704 A CN 202110912704A CN 113604871 B CN113604871 B CN 113604871B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The embodiment of the invention discloses a base support frame, a device and a method for epitaxial growth of a silicon wafer; the base support frame includes: four base support arms extending radially outward and axially upward from a longitudinal axis of the base support frame, the four base support arms being evenly distributed in a circumferential direction about the longitudinal axis, distal end portions of the four base support arms together supporting a base for carrying the silicon wafer; four concave lenses respectively connected to the four base support arms, each concave lens extending along the connected base support arm, the four concave lenses being arranged such that four <110> crystal orientations corresponding to the silicon wafer carried in the base are respectively vertically aligned with the four base support arms, radiant heat radiated vertically via the four concave lenses respectively to positions of the four <110> crystal orientations of the silicon wafer can be refracted and diffused by the four concave lenses.
Description
Technical Field
The embodiment of the invention relates to the technical field of epitaxial growth of silicon wafers, in particular to a base support frame, a device and a method for epitaxial growth of a silicon wafer.
Background
An epitaxial growth process for silicon wafers is an important process in the manufacturing process of semiconductor chips, and the process is to grow a silicon single Crystal layer which has controllable resistivity and thickness, is free of Crystal Originated Particle (COP) defects and is free of oxygen precipitation on polished silicon wafers under certain conditions. The epitaxial growth of silicon wafers mainly comprises growth methods such as vacuum epitaxial deposition, vapor phase epitaxial deposition, liquid phase epitaxial deposition and the like, wherein the vapor phase epitaxial deposition is most widely applied. The epitaxial growth referred to in the present invention refers to epitaxial growth carried out by vapor phase epitaxial deposition, unless otherwise specified.
For the epitaxial growth of silicon wafers, the flatness is an important index for measuring the quality of epitaxial silicon wafers, and the flatness of epitaxial silicon wafers is directly related to the thickness of epitaxial layers. During the epitaxial growth process, the temperature in the reaction chamber, the concentration of the silicon source gas, the flow rate of the silicon source gas, and the like, generated by the heating bulb, all have a significant effect on the thickness of the epitaxial layer. In addition, the crystal orientation of the silicon wafer is another important factor affecting the thickness of the epitaxial layer and thus the flatness of the epitaxial silicon wafer, and the crystal orientation of the silicon wafer and the influence of the crystal orientation on the thickness of the epitaxial layer will be described in detail below.
Referring to fig. 1, fig. 1 shows a crystal orientation of a silicon wafer W100 having a (100) plane as an example. As shown in FIG. 1, if the three o' clock direction of the wafer W100 is the radial direction of 0/360 and is the <110> crystal orientation, the radial directions of 90, 180, and 270 rotated clockwise with respect to the radial direction of 0/360 are also the <110> crystal orientation of the wafer W100, and the radial directions of 45, 135, 225, and 315 rotated clockwise with respect to the radial direction of 0/360 are the <100> crystal orientation of the wafer W100. That is, for the wafer W100, 4 <110> crystal directions correspond to 4 radial directions distributed at 90 ° intervals in the circumferential direction of the wafer, 4 <100> crystal directions also correspond to 4 radial directions distributed at 90 ° intervals in the circumferential direction of the wafer, and adjacent <110> crystal directions and <100> crystal directions are spaced at 45 ° intervals in the circumferential direction of the wafer.
Referring to fig. 2, there is shown the Edge Site front side reference least sQuares/Range (ESFQR) results for a silicon wafer W100 as shown in fig. 1 and having a diameter of 300mm at a position 1mm from the radial Edge, using a conventional susceptor for epitaxial growth of the silicon wafer. In fig. 2, the abscissa indicates the angle of the radial direction of the wafer W100 shown in fig. 1, and the ordinate indicates the ESFQR value (in nm) of the wafer W100 at the corresponding angular position, which may reflect the thickness of the grown epitaxial layer. As shown in fig. 2, the thickness of the epitaxial layer grown on the silicon wafer W100 is a peak value in the radial directions of 0 °/360 °, 90 °, 180 ° and 270 °, that is, the growth rate of the silicon wafer W100 in the <110> crystal direction is the maximum; from the radial directions of 0 °, 90 °, 180 ° and 270 ° to the radial directions of 45 °, 135 °, 225 ° and 315 ° and from the radial directions of 90 °, 180 °, 270 ° and 360 ° to the radial directions of 45 °, 135 °, 225 ° and 315 °, the thickness of the epitaxial layer grown on the silicon wafer W100 gradually decreases, that is, the growth rate of the silicon wafer W100 gradually decreases from the <110> crystal orientation to the <100> crystal orientation, which is also illustrated by an arc line with an arrow in fig. 1, wherein the arrow direction indicates the growth rate decreasing direction; the epitaxial layers grown on wafer W100 have a valley thickness in the radial directions of 45 °, 135 °, 225 °, and 315 °, i.e., wafer W100 has the smallest growth rate in the <100> crystal orientation, and the thickness difference appears more pronounced in regions closer to the radial edges of the wafer as is known in the art.
One existing measure for improving the flatness of an epitaxial silicon wafer is to deliver etching gas for preventing deposition of an epitaxial layer into a reaction chamber via a gas inlet, and during rotation of the silicon wafer with a susceptor, when a region of the silicon wafer where growth is fast passes through the gas inlet, the gas inlet rate is increased, and when a region of the silicon wafer where growth is slow passes through the gas inlet, the gas inlet rate is decreased. However, during epitaxial growth of silicon wafers, it is inevitably necessary to change process parameters such as the rotation speed of the susceptor, and in this case, it is necessary to change the variation of the gas introduction rate correspondingly with the change of the rotation speed, increasing the process complexity.
Another conventional measure for improving the flatness of an epitaxial silicon wafer is to add a heat conduction block on the bottom surface of the susceptor to change the temperature of the corresponding region, so as to achieve the purpose of improving the flatness of the silicon wafer. However, since the thickness of the area of the base where the heat conducting block is installed is small, usually less than 3mm, the installed heat conducting block may cause a load bearing problem to the base, which affects the service life of the base. On the other hand, the heat-conducting block can change the temperature of the corresponding region except the mounting region, so that the local appearance of the finally obtained epitaxial silicon wafer is influenced, and the silicon wafer can generate dislocation due to uneven stress under severe conditions.
Disclosure of Invention
In view of the above, embodiments of the present invention are directed to a susceptor support, apparatus and method for epitaxial growth of silicon wafers; the temperature distribution of the corresponding part of the silicon wafer can be changed by changing the structure of the corresponding part of the base support frame so as to solve the problem that the flatness of the epitaxial silicon wafer is not good due to the uneven thickness of the epitaxial layer in the epitaxial growth process caused by different crystal orientations of the silicon wafer.
The technical scheme of the embodiment of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a susceptor support for epitaxial growth of a silicon wafer, where the susceptor support includes:
four base support arms extending radially outward and axially upward from a longitudinal axis of the base support frame, the four base support arms being evenly distributed in a circumferential direction about the longitudinal axis, distal end portions of the four base support arms together supporting a base for carrying the silicon wafer;
four concave lenses respectively connected to the four susceptor support arms, each concave lens extending along the connected susceptor support arm, the four concave lenses being arranged such that four <110> crystal orientations corresponding to the silicon wafer carried in the susceptor are respectively aligned with the four susceptor support arms in a vertical direction in which radiant heat respectively radiated to positions of the four <110> crystal orientations of the silicon wafer via the four concave lenses can be refracted and diffused by the four concave lenses.
In a second aspect, an embodiment of the present invention provides an apparatus for epitaxial growth of a silicon wafer, where the apparatus includes:
the disc-shaped base is used for bearing the silicon wafer;
the base support frame of the first aspect;
an upper bell jar and a lower bell jar which together enclose a reaction chamber containing the susceptor, wherein the susceptor divides the reaction chamber into an upper reaction chamber in which the silicon wafer is placed and a lower reaction chamber;
a plurality of heating bulbs disposed at peripheries of the upper and lower quartz bell jars and for providing a high temperature environment for vapor phase epitaxial deposition in the reaction chamber through the upper and lower bell jars;
a gas inlet for sequentially delivering a cleaning gas and a silicon source gas into the reaction chamber;
an exhaust port for exhausting respective reaction off-gases of the cleaning gas and the silicon source gas out of the reaction chamber.
In a third aspect, an embodiment of the present invention provides a method for epitaxial growth of a silicon wafer, where the method is applied to the apparatus according to the second aspect, and the method includes:
carrying the silicon wafer in the base such that four <110> crystal orientations of the silicon wafer are vertically aligned with the four base support arms, respectively;
starting the plurality of heating bulbs to raise the temperature of the reaction chamber to 1100-1150 ℃, and delivering silicon source gas into the upper reaction chamber through the gas inlet to grow an epitaxial layer on the silicon wafer;
the silicon source gas penetrates through the front side of the silicon wafer from the upper reaction chamber, diffuses to the back side of the silicon wafer and is discharged from the gap of the reaction chamber into the lower reaction chamber, so that the thickness of an epitaxial layer grown on the silicon wafer is uniform;
a reaction off-gas including the silicon source gas exhausted to the lower reaction chamber is exhausted from the reaction chamber through the exhaust port.
The embodiment of the invention provides a base support frame, a device and a method for epitaxial growth of a silicon wafer; the base in the base support frame with epitaxial silicon chip supports the arm and becomes four by three to all be provided with concave lens on every base supports the arm, and make four <110> crystal orientation of silicon chip respectively vertically with four base support arms alignment, radiate the radiant heat of the position department of four <110> crystal orientation of silicon chip respectively through four concave lenses like this and can be refracted and disperse by four concave lenses, thereby reduced the temperature distribution of silicon chip <110> crystal orientation, under this condition, make the growth rate of the whole upwards of circumference of silicon chip more balanced, the thickness of the epitaxial layer of growth on the silicon chip is more even, can obtain the better epitaxial silicon chip of flatness from this.
Drawings
Fig. 1 is a schematic diagram of a <110> crystal orientation and a <100> crystal orientation of a silicon wafer having a (100) crystal plane according to an embodiment of the present invention.
FIG. 2 is an ESFQR result of the silicon wafer shown in FIG. 1, using a conventional susceptor for epitaxial growth of silicon wafers, provided by an embodiment of the present invention.
Fig. 3 is a schematic diagram of a conventional apparatus for epitaxial growth of a silicon wafer according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a susceptor support frame in an existing apparatus for epitaxial growth of a silicon wafer according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a susceptor support frame in the apparatus for epitaxial growth of a silicon wafer according to an embodiment of the present invention.
Fig. 6 is a schematic top view F of a susceptor support frame in the apparatus for epitaxial growth of a silicon wafer according to the embodiment of the present invention.
Fig. 7 is a schematic diagram illustrating an assembly connection between a base support and a concave lens according to an embodiment of the present invention.
Fig. 8 is a schematic diagram illustrating a refraction and diffusion effect of the concave lens on radiant heat according to an embodiment of the present invention.
Fig. 9 is a schematic diagram of the dimensional parameters of a concave lens according to an embodiment of the invention.
Fig. 10 is a schematic view of an apparatus for epitaxial growth of a silicon wafer according to an embodiment of the present invention.
Fig. 11 is a schematic diagram of a process flow for epitaxial growth of a silicon wafer according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 3, there is shown a schematic view of a prior art apparatus 1 for epitaxial growth of a silicon wafer W. As shown in fig. 3, the apparatus 1 may include: a susceptor 10, wherein the susceptor 10 is used for bearing a silicon wafer W; a susceptor support 20 for supporting the susceptor 10 and driving the susceptor 10 to rotate about the central axis X at a speed during epitaxial growth, wherein the wafer W rotates about the central axis X together with the susceptor 10 during rotation of the susceptor 10, that is, the wafer W is kept stationary with respect to the susceptor 10, thereby requiring a small gap G between a radial edge of the susceptor 10 and an adjacent part 10A (typically, a preheating ring); an upper quartz bell jar 30A and a lower quartz bell jar 30B, the upper quartz bell jar 30A and the lower quartz bell jar 30B enclosing together a reaction chamber RC in which the susceptor 10 and the susceptor supporter 20 are accommodated, wherein the susceptor 10 partitions the reaction chamber RC into an upper reaction chamber RC1 and a lower reaction chamber RC2, and the silicon wafer W is placed in the upper reaction chamber RC 1; generally, the gas pressure in the upper reaction chamber RC1 is slightly greater than the gas pressure in the lower reaction chamber RC2 so that the gas in the upper reaction chamber RC1 enters the lower reaction chamber RC2 through the gap G; a gas inlet 40, the gas inlet 40 being used for feeding a reaction gas, for example SiHCl, into the upper reaction chamber RC1 3 Silicon source gas, hydrogen gas, and B 2 H 6 Or pH 3 Dopant gas, for example, to grow an epitaxial layer on the wafer W by reacting the silicon source gas with hydrogen gas to generate silicon atoms and depositing the silicon atoms on the wafer W, while doping the epitaxial layer with the dopant gas to obtain a desired resistivity; an exhaust port 50, the exhaust port 50 for exhausting the reaction off-gas out of the reaction chamber RC; a plurality of heating bulbs 60 disposed at the peripheries of the upper and lower quartz bell jars 30A and 30B and for providing a high temperature environment for vapor phase epitaxial deposition in the reaction chamber RC through the upper and lower bell jars 30A and 30B; and a mounting part 70 for assembling the respective elements of the device 1.
It should be noted that, in the above-mentioned apparatus 1 for epitaxial growth of silicon wafer W, the susceptor support 20 includes three support arms 21 distributed at equal intervals along the circumference, and as shown in fig. 4, in a specific plan view, in a case where the susceptor support 20 for epitaxial growth of silicon wafer W as described above is used, the growth rates of the <110> crystal orientation and the <100> crystal orientation of the silicon wafer W are different, so the thickness of the epitaxial layer grown on the silicon wafer W is different, and thus the flatness of the finally obtained epitaxial silicon wafer is poor.
Based on this, referring to fig. 5, an embodiment of the present invention provides a susceptor supporter 200 instead of the susceptor supporter 20 in the apparatus 1 for epitaxial growth of a silicon wafer W shown in fig. 1, and fig. 6 shows a top view of the susceptor supporter 200 provided in the embodiment of the present invention, and specifically, the susceptor supporter 200 provided in the embodiment of the present invention includes:
four susceptor support arms 201 extending radially outward and axially upward from a longitudinal axis of the susceptor support frame 200, the four susceptor support arms 201 being evenly distributed in a circumferential direction around the longitudinal axis, distal end portions of the four susceptor support arms 201 together supporting a susceptor 10 for carrying the silicon wafer W;
four concave lenses 202 respectively connected to the four susceptor support arms 201, each concave lens 202 extending along the connected susceptor 10 support arm, the four concave lenses 202 being disposed such that four <110> crystal orientations corresponding to the silicon wafer W carried in the susceptor 10 are respectively aligned with the four susceptor support arms 201 in a vertical direction in which radiant heat radiated to positions of the four <110> crystal orientations of the silicon wafer W via the four concave lenses 202 respectively can be refracted and diffused by the four concave lenses 202.
In the case that the susceptor support frame 200 according to the present invention is used to replace the susceptor support frame 20 in the apparatus 1 for epitaxial growth of a silicon wafer W shown in fig. 1, corresponding concave lenses 202 are disposed vertically below the positions of 0 °/360 °, 90 °, 180 ° and 270 ° of the silicon wafer W <110> crystal orientation, and due to the action of the concave lenses 202, heat radiated to the crystal orientation of the silicon wafer W <110> will be radiated onto the concave lenses 202 first, and the concave lenses 202 will generate a certain refraction and dispersion effect on the radiated heat, so that the temperature distribution of the crystal orientation of the silicon wafer W <110> is reduced compared with that in the case of using the susceptor support frame 20, and after the susceptor support frame 200 is used to replace the susceptor support frame 20, the difference in temperature distribution from the crystal orientation of the silicon wafer W <110> to the crystal orientation of the silicon wafer W <100> is reduced, and in this case, the growth rate of the epitaxial layer of the silicon wafer W <110> to <100> crystal orientation of the silicon wafer W is made more uniform, and further the thickness of the epitaxial layer of the silicon wafer W is made more uniform, thereby obtaining a silicon wafer with better flatness.
The base support 200 is obtained after the structure of the original base support 20 is changed, and in order to change the structure and not introduce new impurities during the epitaxial growth of the silicon wafer W, the material of the base support arm 201 is preferably quartz. Accordingly, the material of the concave lens 202 is also quartz.
In the process of performing epitaxial growth of the silicon wafer W, the susceptor support frame 200 drives the susceptor 10 to rotate around the X axis, and therefore, in order to prevent the concave lens 202 from shaking relative to the susceptor support arm 201 in the rotating process, in the specific embodiment of the present invention, referring to fig. 7, a through hole 2021 is provided on each concave lens 202, so that the susceptor support arm 201 can pass through the through hole 2021 to connect the concave lens 202 and the susceptor support arm 201. It is understood that the size of the through hole 2021 is matched to the size of the base support arm 201 so that the concave lens 202 does not shake with the base support arm 201 during the rotation.
In the embodiment of the present invention, it is preferable that each concave lens 202 is further provided so that radiant heat can be radiated to the periphery of the silicon wafer W via the concave lens 202. It is understood that the thickness difference of the epitaxial layer of the wafer W between the crystal orientation <110> and the crystal orientation <100> is more obvious in the area closer to the radial edge of the wafer W, and therefore, in order to obtain a more uniform thickness of the epitaxial layer, in the embodiment of the present invention, it is more desirable that the temperature of the periphery of the wafer W can be reduced by adopting the concave lens 202 structure to reduce the thickness difference of the epitaxial layer.
As can be appreciated, referring to fig. 8, the concave lens 202 includes a concave surface 2023 and a convex surface 2022, the concave surface 2023 is disposed away from the silicon wafer W, and the convex surface 2022 is disposed toward the silicon wafer W to achieve a refraction and divergence effect on radiant heat. As shown in fig. 8, when the heat radiation generated by the heating bulb 60 enters the reaction chamber RC, the radiant heat firstly irradiates onto the concave surface 2023 of the concave lens 202 disposed right below the crystal orientation of the silicon wafer W <110 >/0 °/360 °, 90 °, 180 ° and 270 °, and according to the refraction principle of the lens, the radiant heat irradiated onto the concave lens 202 is firstly refracted by the concave surface 2023, irradiated onto the convex surface 2022, and then refracted and dispersed by the convex surface 2022, and then incident onto the silicon wafer W, that is, the concave lens 202 performs the refraction and dispersion function in the transmission process of the radiant heat, in this case, compared with the original susceptor support frame 20, the replaced susceptor support frame 200 reduces the radiant heat irradiated onto the crystal orientation of the silicon wafer W <110>, that the temperature rise of the portion of the silicon wafer corresponding to the crystal orientation of the silicon wafer W <110> becomes slow, and thus the epitaxial layer growth rate of the portion of the silicon wafer at the crystal orientation position is also reduced; on the other hand, the silicon wafer part at the crystal orientation position of the silicon wafer W <100> may have a part of the radiant heat refracted and diffused by the concave lens 202 to irradiate the silicon wafer part at the crystal orientation position of the <100> in addition to the previous radiant heat, so that the growth rate of the epitaxial layer of the silicon wafer part at the crystal orientation position is increased, the growth rate of the epitaxial layer of the silicon wafer W from the crystal orientation of the silicon wafer W <110> to the crystal orientation of the <100> silicon wafer W is gradually uniform, and thus the epitaxial silicon wafer of the uniform and flat silicon wafer W can be obtained.
Based on the dimensions of the susceptor 10, the reaction chamber RC, and the like in the apparatus 1 shown in fig. 3 and the diameter of the silicon wafer W, referring to fig. 9, in an embodiment of the present invention, preferably, the distance between the radially outer edge OE of each concave lens 202 and the longitudinal axis may be equal to the radius of the silicon wafer W, the extension length D2 of each concave lens 202 in the radial direction may be 3mm corresponding to the diameter of the silicon wafer W, and the extension angle of the radially outer edge OE of each concave lens 202 in the circumferential direction may be 15 ° < α <30 °.
Referring to fig. 10, an apparatus 2 for epitaxial growth of a silicon wafer W is also provided according to an embodiment of the present invention, the apparatus 2 being obtained by replacing the susceptor supporter 200 provided according to an embodiment of the present invention with the susceptor supporter 20 shown in fig. 3. In particular, the device 2 may comprise: a disc-shaped base 10, wherein the base 10 is used for bearing the silicon wafer W; the embodiment of the invention provides a base support frame 200; an upper bell jar 30A and a lower bell jar 30B, the upper bell jar 30A and the lower bell jar 30B together enclosing a reaction chamber RC housing the susceptor 10, wherein the susceptor 10 divides the reaction chamber RC into an upper reaction chamber RC1 and a lower reaction chamber RC2, the silicon wafer W being placed in the upper reaction chamber RC 1; a plurality of heating bulbs 60 disposed at the peripheries of the upper and lower quartz bell jars 30A and 30B and for providing a high temperature environment for vapor phase epitaxial deposition in the reaction chamber through the upper and lower bell jars 30A and 30B; a gas inlet 40, the gas inlet 40 for sequentially delivering a cleaning gas and a silicon source gas into the reaction chamber RC; an exhaust port 50, the exhaust port 50 being used for exhausting the respective reaction off-gases of the cleaning gas and the silicon source gas out of the reaction chamber RC. Otherwise, the apparatus 2 may further include a mounting part 70 and the like as in the conventional apparatus 1 for epitaxial growth of silicon wafers W, which will not be described in detail herein.
Referring to fig. 11, an embodiment of the present invention further provides a method for epitaxial growth of a silicon wafer W, where the method is applied to an apparatus 2 provided by an embodiment of the present invention, and the method may include:
s1101, carrying the silicon wafer W in the base 10 such that four <110> crystal orientations of the silicon wafer W are vertically aligned with the four base support arms 202, respectively;
s1102, turning on the plurality of heating bulbs 60 to raise the temperature of the reaction chamber RC to 1100 ℃ to 1150 ℃, and delivering a silicon source gas into the upper reaction chamber RC1 through the gas inlet 40 to grow an epitaxial layer on the silicon wafer W;
s1103, the silicon source gas passes through the front surface of the silicon wafer W from the upper reaction chamber RC1, diffuses to the back surface of the silicon wafer W, and is discharged into the lower reaction chamber RC2 from the gap G of the reaction chamber RC, so that the thickness of an epitaxial layer grown on the silicon wafer W is uniform;
s1104, the reaction off-gas including the silicon source gas exhausted to the lower reaction chamber RC2 is exhausted out of the reaction chamber RC through the exhaust port 50.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (9)
1. A susceptor support frame for epitaxial growth of a silicon wafer, the susceptor support frame comprising:
four base support arms extending radially outward and axially upward from a longitudinal axis of the base support frame, the four base support arms being evenly distributed in a circumferential direction about the longitudinal axis, distal end portions of the four base support arms together supporting a base for carrying the silicon wafer;
four concave lenses respectively connected to the four susceptor support arms, each concave lens extending along the connected susceptor support arm, the four concave lenses being arranged such that four <110> crystal orientations corresponding to the silicon wafer carried in the susceptor are respectively vertically aligned with the four susceptor support arms, radiant heat radiated to positions of the four <110> crystal orientations of the silicon wafer respectively via the four concave lenses in the vertical direction can be refracted and diffused by the four concave lenses,
wherein a distance between a radially outer edge of each concave lens and the longitudinal axis is equal to a radius of the silicon wafer, corresponding to a diameter of 300mm of the silicon wafer, an extension length of each concave lens in a radial direction is 3mm and an extension angle of the radially outer edge of each concave lens in a circumferential direction is 15 ° < α <30 °.
2. The susceptor support stand of claim 1, wherein the material of the susceptor support arm is quartz.
3. The susceptor support stand of claim 1, wherein the material of the concave lens is quartz.
4. The base support stand of claim 3, wherein a through hole is provided in the concave lens to enable the base support arm to pass through the through hole to enable connection of the concave lens to the base support arm.
5. The susceptor support stand of claim 4, wherein each concave lens is further configured to enable radiant heat to radiate via the concave lens to a periphery of the silicon wafer.
6. The susceptor support stand of claim 5, wherein the concave lens comprises a concave surface disposed away from the silicon wafer and a convex surface disposed toward the silicon wafer.
7. The susceptor support stand of claim 6 wherein the radiant heat impinging upon the concave lens impinges upon the convex surface after being refracted by the concave surface and then impinges upon the silicon wafer after being refracted and dispersed by the convex surface.
8. An apparatus for epitaxial growth of a silicon wafer, the apparatus comprising:
the disc-shaped base is used for bearing the silicon wafer;
the base support frame of any one of claims 1 to 7;
an upper bell jar and a lower bell jar which together enclose a reaction chamber containing the susceptor, wherein the susceptor divides the reaction chamber into an upper reaction chamber in which the silicon wafer is placed and a lower reaction chamber;
a plurality of heating bulbs disposed at peripheries of the upper and lower quartz bell jars and for providing a high temperature environment for vapor phase epitaxial deposition in the reaction chamber through the upper and lower bell jars;
a gas inlet for sequentially delivering a cleaning gas and a silicon source gas into the reaction chamber;
an exhaust port for exhausting respective reaction off-gases of the cleaning gas and the silicon source gas out of the reaction chamber.
9. A method for the epitaxial growth of silicon wafers, characterized in that it is applied to the device according to claim 8, said method comprising:
carrying the silicon wafer in the base such that four <110> crystal orientations of the silicon wafer are vertically aligned with the four base support arms, respectively;
starting the plurality of heating bulbs to raise the temperature of the reaction chamber to 1100-1150 ℃, and delivering silicon source gas into the upper reaction chamber through the gas inlet to grow an epitaxial layer on the silicon wafer;
the silicon source gas penetrates through the front side of the silicon wafer from the upper reaction chamber, diffuses to the back side of the silicon wafer and is discharged from the gap of the reaction chamber into the lower reaction chamber, so that the thickness of an epitaxial layer grown on the silicon wafer is uniform;
a reaction off-gas including the silicon source gas exhausted to the lower reaction chamber is exhausted from the reaction chamber through the exhaust port.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110912704.6A CN113604871B (en) | 2021-08-10 | 2021-08-10 | Base support frame, device and method for epitaxial growth of silicon wafer |
| TW111128930A TWI812377B (en) | 2021-08-10 | 2022-08-02 | A base support frame, device and method for epitaxial growth of silicon wafers |
Applications Claiming Priority (1)
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