CN114059158A - Wafer supporting rod device, equipment and method for epitaxial growth of wafer - Google Patents
Wafer supporting rod device, equipment and method for epitaxial growth of wafer Download PDFInfo
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- CN114059158A CN114059158A CN202111362304.9A CN202111362304A CN114059158A CN 114059158 A CN114059158 A CN 114059158A CN 202111362304 A CN202111362304 A CN 202111362304A CN 114059158 A CN114059158 A CN 114059158A
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 235000012431 wafers Nutrition 0.000 claims description 208
- 238000006243 chemical reaction Methods 0.000 claims description 78
- 239000007789 gas Substances 0.000 claims description 46
- 239000010453 quartz Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 230000013011 mating Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 description 14
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 101100099271 Arabidopsis thaliana THA2 gene Proteins 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The embodiment of the invention discloses a wafer supporting rod device, equipment and a method for epitaxial growth of a wafer; the wafer supporting rod device comprises: a wafer support rod and a sleeve assembly; the wafer supporting rod is sleeved with the sleeve assembly, and the wafer supporting rod can move back and forth along the axial direction of the sleeve assembly.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductor manufacturing, in particular to a wafer supporting rod device, equipment and a method for epitaxial growth of a wafer.
Background
Conventional wafers are prepared through a single crystal silicon rod growing process, a slicing process, a grinding process, a polishing process, and a cleaning process for removing abrasives or impurities attached to the wafers after the polishing process. The wafer produced by this method is called a polished wafer, and a wafer on the surface of which a single crystal thin film (also called an epitaxial layer) is grown is called an epitaxial wafer.
Compared with a polished wafer, an epitaxial wafer has the characteristics of less surface defects, excellent crystallization performance and controllable resistivity, and is widely applied to highly Integrated Circuit (IC) devices and Metal-Oxide-Semiconductor (MOS) processes. At present, in a conventional scheme, a wafer is epitaxially grown by a chemical vapor deposition method, specifically, the wafer is firstly transferred to a pedestal of an epitaxial deposition reaction chamber, then the temperature of the epitaxial deposition reaction chamber is raised, after reaching a preset temperature, cleaning gas (H2) is sent to remove natural oxides on the surface of the wafer, and then silicon source gas is sent to continuously and uniformly grow an epitaxial layer on the front surface of the wafer. However, the flatness of the epitaxial wafer obtained by the conventional epitaxial deposition reaction growth apparatus is not uniform, and particularly, the thickness of the epitaxial layer outside the region corresponding to each of the three wafer support rods is not uniform, so that an abnormal pattern is formed on the front surface of the epitaxial wafer.
At present, with the continuous development of Metal-Oxide-Semiconductor (MOS) process, the line width is smaller and smaller, and the requirement for the wafer flatness is stricter and stricter. A wafer with poor planarity may cause defocus and may even affect the Chemical Mechanical Polishing (CMP) process, thereby affecting product yield. In recent years, Nanotopography (NT) has been generally adopted as a parameter for evaluating the flatness of a wafer. It should be noted that NT is the deviation of the surface unevenness of the entire wafer in the Quality assurance Area (FQA) within the spatial wavelength range of approximately 0.2 to 10nm, and FQA most commonly used in the general testing of NT parameters is 2 × 2mm of the central Area of the wafer surface2(abbreviated as THA2) and 10X 10mm2(THA 4 for short), it is understood that the NT parameter refers to the height difference of the wafer surface in the above-mentioned area. On the other hand, NT has a significant impact on the CMP process,specifically, when the surface of the wafer is flat, the dielectric layer can be uniformly polished and removed; however, when the local flatness of the wafer is not good, over-polishing or under-polishing may occur, and the over-polishing may lead to early breakdown of the IC device, and the under-polishing may lead to an error in the contact of the IC device.
Disclosure of Invention
In view of the above, embodiments of the present invention are directed to a wafer support rod apparatus, device and method for epitaxial growth of a wafer; the temperature uniformity of the wafer supporting rod and each area of the base in the epitaxial growth process can be improved, the growth rate of the corresponding area of the wafer supporting rod on the epitaxial layer and other areas is balanced, and the flatness of the epitaxial wafer is improved.
The technical scheme of the embodiment of the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a wafer supporting rod apparatus for epitaxial growth of a wafer, where the wafer supporting rod apparatus includes: a wafer support rod and a sleeve assembly; wherein the content of the first and second substances,
the wafer supporting rod is sleeved with the sleeve assembly, and the wafer supporting rod can move back and forth along the axial direction of the sleeve assembly.
In a second aspect, an embodiment of the present invention provides an apparatus for epitaxial growth of a wafer, where the apparatus includes:
the wafer bearing device comprises a disc-shaped base, a wafer bearing device and a wafer bearing device, wherein the disc-shaped base is used for bearing a wafer;
a base support frame for supporting the base;
three sets of wafer support bar apparatus according to the first aspect;
the wafer processing device comprises an upper quartz bell jar and a lower quartz bell jar, wherein the upper quartz bell jar and the lower quartz bell jar together enclose a reaction chamber for accommodating the base, the base divides the reaction chamber into an upper reaction chamber and a lower reaction chamber, and the wafer is placed in the upper reaction chamber;
a plurality of heating bulbs disposed at peripheries of the upper and lower quartz bell jars and for providing a high temperature environment for epitaxial growth in the reaction chamber through the upper and lower quartz bell jars;
a gas inlet for sequentially delivering a cleaning gas and a silicon source gas into the reaction chamber;
an exhaust port for exhausting respective reaction off-gases of the cleaning gas and the silicon source gas out of the reaction chamber.
In a third aspect, an embodiment of the present invention provides a method for epitaxial growth of a wafer, where the method is applied to the apparatus in the second aspect, and the method includes:
loading the wafer in the susceptor by raising and lowering the wafer support rod;
starting a plurality of heating bulbs to raise the temperature of the reaction chamber to 1100-1150 ℃, and conveying silicon source gas into the upper reaction chamber through the gas inlet so as to grow an epitaxial layer on the surface of the wafer;
the silicon source gas penetrates through the front side of the wafer from the upper reaction chamber and diffuses to the back side of the wafer so as to be discharged from the gap of the reaction chamber into the lower reaction chamber;
exhausting a reaction off-gas including the silicon source gas exhausted to the lower reaction chamber out of the reaction chamber through an exhaust port;
and unloading the wafer which is subjected to the epitaxial deposition reaction from the base by lifting the wafer supporting rod.
The embodiment of the invention provides a wafer supporting rod device, equipment and a method for epitaxial growth of a wafer; this wafer bracing piece device includes wafer bracing piece and sleeve subassembly, wherein, the wafer bracing piece cup joints with the sleeve subassembly mutually, and the wafer bracing piece can reciprocating motion along the axial direction of sleeve subassembly, at the in-process of wafer epitaxial growth, absorb radiation heat back by the sleeve subassembly to the upper end of wafer bracing piece radiation heat again, the temperature homogeneity that the wafer bracing piece corresponds region and other regions on the epitaxial layer has been improved, the growth rate that the wafer bracing piece corresponds region and other regions on the epitaxial layer has been balanced, and then eliminate the surperficial unusual pattern of epitaxial wafer, with the roughness that improves epitaxial wafer.
Drawings
Fig. 1 is a schematic structural diagram of a conventional apparatus for epitaxial growth of a wafer according to an embodiment of the present invention;
FIG. 2 is a schematic view of a wafer loading/unloading scenario according to an embodiment of the present invention;
FIG. 3 is a second view of a wafer loading/unloading scenario according to an embodiment of the present invention;
FIG. 4 is a third view of a wafer loading/unloading scenario according to an embodiment of the present invention;
FIG. 5 is a schematic view of a nanotopography of a wafer epitaxial layer obtained by a conventional epitaxial growth apparatus according to an embodiment of the present invention;
FIG. 6 shows an embodiment of the present invention providing FQA of 10 × 10mm at the center of the wafer surface2In the area, the NT value of the wafer epitaxial layer is shown schematically;
FIG. 7 is a schematic structural diagram of a wafer supporting rod device for epitaxial growth of a wafer according to an embodiment of the present invention;
FIG. 8 is a schematic top view of a sleeve structure according to an embodiment of the present invention;
FIG. 9 is a schematic structural view of a sleeve taken along plane A-A according to an embodiment of the present invention;
FIG. 10 is a schematic top view of a sleeve holder configuration according to an embodiment of the present invention;
FIG. 11 is a schematic structural view of a sleeve holder taken along plane B-B according to an embodiment of the present invention;
FIG. 12 is a schematic top view of a base support structure according to an embodiment of the present invention;
FIG. 13 is a schematic structural view of the base support taken along plane C-C in accordance with an embodiment of the present invention;
fig. 14 is a schematic structural diagram of an apparatus for epitaxial growth of a wafer according to an embodiment of the present invention;
fig. 15 is a flowchart illustrating a method for epitaxial growth of a wafer according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, a prior art apparatus 1 for epitaxial growth of a wafer W is shown. As shown in fig. 1, the apparatus 1 may include: a susceptor 10, wherein the susceptor 10 is used for carrying a wafer W; a susceptor support 20A for supporting the susceptor 10 and driving the susceptor 10 to rotate about the central axis X at a speed during epitaxial growth, wherein during rotation of the susceptor 10 the wafer W rotates about the central axis X along with the susceptor 10, that is, the wafer W remains stationary with respect to the susceptor 10, thereby requiring a small gap G between the radial edge of the susceptor 10 and the adjacent part 10A (typically a preheat ring); an upper quartz bell jar 30A and a lower quartz bell jar 30B, the upper quartz bell jar 30A and the lower quartz bell jar 30B enclosing together a reaction chamber RC in which the susceptor 10 and the susceptor support frame 20A are housed, wherein the susceptor 10 divides the reaction chamber RC into an upper reaction chamber RC1 and a lower reaction chamber RC2, the wafer W being placed in the upper reaction chamber RC 1; typically, the gas pressure in the upper reaction chamber RC1 is slightly greater than the gas pressure in the lower reaction chamber RC2 so that the gas in the upper reaction chamber RC1 will enter the lower reaction chamber RC2 via the gap G; a gas inlet 40, the gas inlet 40 being adapted to convey a reaction gas, for example as SiHCl, into the upper reaction chamber RC13Silicon source gas, hydrogen gas, and B2H6Or pH3Dopant gas, for example, to facilitate the formation of silicon atoms by reaction of the silicon source gas with hydrogen and deposition on the wafer W to grow an epitaxial layer on the wafer W, while doping the epitaxial layer of the wafer W with the dopant gas to obtain a desired resistivity; an exhaust port 50, the exhaust port 50 for exhausting the reaction off-gas out of the reaction chamber RC; a plurality of heating bulbs 60 disposed at the peripheries of the upper and lower quartz bell jars 30A and 30B and used to provide a high temperature environment for vapor phase epitaxial deposition in the reaction chamber RC through the upper and lower quartz bell jars 30A and 30B; and a mounting part 70 for assembling the respective elements of the apparatus 1.
It is to be understood that in the above apparatus 1, a wafer support rod 80A and a wafer support rod carrier 90 disposed at a position directly below the wafer support rod 80A are further provided, as shown in fig. 2, before the epitaxial deposition reaction, a wafer W is placed on the wafer support rod 80A by a robot (not shown), lowered by the wafer support rod 80A so that the wafer W is loaded into the susceptor 10 (i.e., in the order of fig. 2 → 3 → 4), and then the epitaxial deposition reaction is performed. After the epitaxial deposition reaction is completed, the wafer support rod 80A is raised to lift the epitaxial wafer from the susceptor 10 (i.e., in the order of fig. 4 → fig. 3 → fig. 2), and finally, the wafer is taken out by the robot. It will be appreciated that the wafer support rods 80A are raised and lowered by the raising and lowering of the wafer support rod carriers 90 before and after the epitaxial deposition reaction to effect the raising and lowering of the wafers W within the susceptor 10. It should be noted that the apparatus 1 includes three wafer support rods 80A, which are a first wafer support rod 80A-1, a second wafer support rod 80A-2 and a third wafer support rod 80A-3, and the three wafer support rods 80A are uniformly distributed right under the susceptor 10 around the circumferential direction of the longitudinal axis of the susceptor support frame 20A. It should be noted that, in the embodiment of the invention, the center of the wafer W is set as the origin, the distance between the first wafer support rod 80A-1 and the center of the wafer W is set to be-100 ± 2mm, and the distance between the second wafer support rod 80A-2 and the center of the wafer W is set to be 100 ± 2 mm.
It will be appreciated that during epitaxial growth the front side of the wafer W is thermally radiated by the upper heating bulb 60 to provide heat for the epitaxial deposition reaction, while the back side of the wafer W is thermally radiated by the susceptor 10 and the wafer support rod 80A to provide heat for the epitaxial deposition reaction.
In the apparatus 1, the susceptor 10 is made of graphite coated with a silicon carbide coating; the wafer support rod 80A is made of glassy carbon and has a diameter of 4 mm; the susceptor support 20A and the wafer support bar carrier 90 are made of transparent quartz.
Referring to fig. 5, the nanotopography of the front side of the epitaxial wafer obtained by the apparatus 1 is shown. As can be seen from fig. 5, abnormal patterns (indicated by black dashed rectangles) are formed on the front surface of the epitaxial wafer at the regions corresponding to the three wafer support rods 80AThe abnormal pattern on the left side of the black line in fig. 5 is a region corresponding to the first wafer support bar 80A-1, and the abnormal pattern on the right side of the black line is a region corresponding to the second wafer support bar 80A-2. Based on the nanotopography of the front surface of the epitaxial wafer shown in FIG. 5, FQA is set to 10X 10mm of the center of the front surface of the epitaxial wafer2And collecting NT values of a plurality of test points in the region, and drawing to obtain a relation curve graph between the NT values of the epitaxial layer and different test points as shown in figure 6. As can be seen from fig. 6, the NT values of the epitaxial layers of the regions corresponding to the first and second wafer supporting bars 80A-1 and 80A-2 are significantly greater than those of the other regions, specifically, the NT value of the epitaxial layer of the region corresponding to the first wafer supporting bar 80A-1 is about-12.5 nm, and the NT value of the epitaxial layer of the region corresponding to the second wafer supporting bar 80A-2 is about-8.5 nm. This is mainly because the susceptor 10 and the wafer supporting rod 80A are made of different materials, which causes different emissivity between the susceptor 10 and the wafer supporting rod 80A, and the diameter of the wafer supporting rod 80A is smaller than that of the opening of the susceptor 10, which causes non-uniform reaction heat of epitaxial deposition received by the wafer supporting rod 80A, the surface of the susceptor and the opening thereof during the epitaxial growth process, and this difference causes the growth rate of the epitaxial layer in the corresponding region of the wafer supporting rod 80A to be different from that in other regions, which finally affects the uniformity of the thickness of the epitaxial layer, so that the surface of the epitaxial wafer generates abnormal patterns.
Based on the above description, it is desirable to provide a wafer supporting rod device for epitaxial growth of a wafer W, so as to improve the temperature difference between the region corresponding to the wafer supporting rod 80A on the epitaxial layer of the wafer W and other regions on the susceptor 10, balance the growth rate between the region corresponding to the wafer supporting rod on the epitaxial layer and other regions, and further improve the flatness of the epitaxial wafer. Referring to fig. 7, it is shown that the embodiment of the present invention intends to provide a wafer supporting rod apparatus 7 for epitaxial growth of a wafer W, the wafer supporting rod apparatus 7 comprising: a wafer support rod 80 and a sleeve assembly 700; wherein the content of the first and second substances,
the wafer support rod 80 is sleeved with the sleeve assembly 700, and the wafer support rod can move back and forth along the axial direction of the sleeve assembly 700.
As can be appreciated, by installing the wafer support rod 80A and the sleeve assembly 700 at the lower position of the susceptor 10, and sleeving the wafer support rod 80A and the sleeve assembly 700, in the epitaxial growth process, it is avoided that the heating bulb 60 directly radiates heat to the upper end of the wafer support rod 80, but the sleeve assembly 700 absorbs the radiation heat of the heating bulb 60 and then radiates heat to the upper end of the wafer support rod 80, so as to balance the temperature difference between the surfaces of the wafer support rod 80 and the susceptor 10 and the temperature difference between the areas near the openings of the wafer support rod 80 and the susceptor 10, balance the growth rates of the corresponding area of the wafer support rod 80 and the other areas outside the epitaxial layer to obtain the epitaxial layer with uniform thickness, so as to eliminate the abnormal patterns on the surface of the epitaxial wafer, and further improve the flatness of the epitaxial wafer.
For the wafer supporting rod apparatus 700 shown in fig. 7, in some possible implementations, as shown in fig. 7, the sleeve assembly 700 includes a sleeve 701 and a sleeve holder 702, and the sleeve 701 is connected to an upper end of the sleeve holder 702, and a lower end of the sleeve holder 702 is connected to the susceptor support frame 20.
Referring to fig. 8, which shows a schematic top view of the sleeve 701, in order to enable the assembly of the sleeve 701 with the sleeve holder 702, in the implementation described above, in some examples, as shown in fig. 9, a lower end portion of the sleeve 701 is provided with a first protruding structure 7011, as shown in fig. 10, to be in fit connection with a first concave hole 7021 at an upper end portion of the sleeve holder 702, so that the sleeve 701 is fixedly mounted on the sleeve holder 702.
It is understood that, in order to realize the assembly of the sleeve holder 701 and the base support 20, in the implementation described above, in some examples, as shown in fig. 11, a lower end portion of the sleeve holder 702 is provided with a second protruding structure 7022 to be cooperatively connected with the second concave hole 201 of the base support 20 shown in fig. 12, so that the sleeve holder 702 is fixedly mounted on the base support 20, and a side view of the second concave hole 201 is specifically shown in fig. 13.
For the wafer support rod device 7 shown in fig. 7, in order to enable the wafer support rod 80 to reciprocate along the axial direction of the sleeve assembly 700 for loading and unloading the wafer W, in some possible implementations, as shown in fig. 8 and 9, the inner diameter D1 of the sleeve 701 is 4-4.5 mm, the outer diameter D2 is 8-10 mm, and the height H is 10-15 mm. In the embodiment of the invention, as shown in fig. 7, the diameter D of the wafer support rod 80 is 3.7-3.9 mm. As can be appreciated, the inner diameter D1 of the sleeve 701 is larger than the diameter D of the wafer support rod 80, so that a gap exists between the wafer support rod 80 and the inner surface of the sleeve 701 to facilitate the raising and lowering of the wafer support rod 80.
In addition, in order to balance the temperature difference between the wafer support rod 80 and the susceptor 10, the outer surface of the sleeve 701 is covered with the silicon carbide film, and understandably, the material of the susceptor 10 is graphite covered with the silicon carbide coating, so that the outer surface of the sleeve 701 is covered with the silicon carbide film, and the thermal radiation coefficients of the sleeve 701 and the susceptor 10 can be ensured to be the same, so that when the heating bulb 60 provides heat in the epitaxial growth process, the heat received by the corresponding position of the wafer support rod 80 on the epitaxial layer can be consistent with other regions, and further, the growth rate of the epitaxial layer in each region on the surface of the wafer W can be consistent. On the other hand, the material of the sleeve holder 702 is transparent quartz, which is the same as the material of the wafer supporting rod carrier 90.
Referring to fig. 14, an embodiment of the present invention further provides an apparatus 2 for epitaxial growth of a wafer W, where the apparatus 2 includes:
a disc-shaped base 10 for carrying a wafer W;
a base support 20, the base support 20 being for supporting the base 10;
three groups of wafer supporting rod devices 7 (shown by black dashed rectangles in the figure) according to the above technical scheme;
an upper quartz bell jar 30A and a lower quartz bell jar 30B, the upper quartz bell jar 30A and the lower quartz bell jar 30B together enclosing a reaction chamber RC housing the susceptor 10, wherein the susceptor 10 divides the reaction chamber RC into an upper reaction chamber RC1 and a lower reaction chamber RC2, the wafer W being placed in the upper reaction chamber RC 1;
a plurality of heating bulbs 60 disposed at the peripheries of the upper and lower quartz bell jars 30A and 30B and for providing a high temperature environment for epitaxial growth in the reaction chamber RC through the upper and lower quartz bell jars 30A and 30B;
a gas inlet 40, the gas inlet 40 for sequentially delivering a cleaning gas and a silicon source gas into the reaction chamber RC;
an exhaust port 50, the exhaust port 50 being used for exhausting the respective reaction off-gases of the cleaning gas and the silicon source gas out of the reaction chamber RC.
It can be understood that when the wafer support rod device 7 is installed in the apparatus 2, the upper end of the sleeve 701 of the sleeve assembly 700 is closely attached to the lower surface of the susceptor 10, so as to ensure that the heat generated by the heating bulb 60 passes through the sleeve 701 and then is radiated to the upper end of the wafer support rod 80, so as to ensure that the heat received by the wafer support rod 701 and the regions of the susceptor 10 is uniform, so that the growth rate of the epitaxial layer of each region on the surface of the wafer W loaded into the susceptor 10 is uniform, and the flatness of the epitaxial wafer is improved.
Referring to fig. 15, an embodiment of the present invention further provides a method for epitaxial growth of a wafer W, where the method is applied to the apparatus 2 provided by the embodiment of the present invention, and the method includes:
s1501, the wafer W is loaded in the base 10 by ascending and descending the wafer support rod 80;
s1502, turning on the plurality of heating lamps 60 to raise the temperature of the reaction chamber to 1100-1150 ℃, and delivering the silicon source gas into the upper reaction chamber RC1 through the gas inlet 40 to grow an epitaxial layer on the surface of the wafer W;
s1503, the silicon source gas passes through the front surface of the wafer W from the upper reaction chamber RC1 and diffuses to the back surface of the wafer W to be discharged from the gap G of the reaction chamber RC into the lower reaction chamber RC 2;
s1504, exhausting a reaction off-gas including the silicon source gas exhausted to the lower reaction chamber RC2 out of the reaction chamber RC through an exhaust port 50;
s1505, unloading the wafer from the susceptor after the epitaxial deposition reaction by lifting the wafer support rod.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (9)
1. A wafer support rod apparatus for epitaxial growth of a wafer, the wafer support rod apparatus comprising: a wafer support rod and a sleeve assembly; wherein the content of the first and second substances,
the wafer supporting rod is sleeved with the sleeve assembly, and the wafer supporting rod can move back and forth along the axial direction of the sleeve assembly.
2. The wafer support bar apparatus of claim 1, wherein the sleeve assembly comprises a sleeve and a sleeve holder, and wherein the sleeve is connected to an upper end of the sleeve holder and a lower end of the sleeve holder is connected to the susceptor support frame.
3. The wafer support bar apparatus of claim 2, wherein the lower end of the sleeve is provided with a first raised structure for mating engagement with a first recessed hole in the upper end of the sleeve holder.
4. The wafer support apparatus of claim 3, wherein the lower end of the sleeve holder is provided with a second protrusion for mating engagement with a second recess of the susceptor support frame.
5. The wafer support apparatus of claim 1, wherein the sleeve has an inner diameter D1 of 4-4.5 mm, an outer diameter D2 of 8-10 mm, and a height H of 10-15 mm.
6. The wafer support rod apparatus of claim 1, wherein the diameter D of the wafer support rod is 3.7-3.9 mm.
7. The wafer support bar apparatus of claim 1, wherein the outer surface of the sleeve is covered with a silicon carbide film and the sleeve holder is made of transparent quartz.
8. An apparatus for epitaxial growth of wafers, the apparatus comprising:
the wafer bearing device comprises a disc-shaped base, a wafer bearing device and a wafer bearing device, wherein the disc-shaped base is used for bearing a wafer;
a base support frame for supporting the base;
three sets of wafer support bar apparatus as claimed in any one of claims 1 to 7;
the wafer processing device comprises an upper quartz bell jar and a lower quartz bell jar, wherein the upper quartz bell jar and the lower quartz bell jar together enclose a reaction chamber for accommodating the base, the base divides the reaction chamber into an upper reaction chamber and a lower reaction chamber, and the wafer is placed in the upper reaction chamber;
a plurality of heating bulbs disposed at peripheries of the upper and lower quartz bell jars and for providing a high temperature environment for epitaxial growth in the reaction chamber through the upper and lower quartz bell jars;
a gas inlet for sequentially delivering a cleaning gas and a silicon source gas into the reaction chamber;
an exhaust port for exhausting respective reaction off-gases of the cleaning gas and the silicon source gas out of the reaction chamber.
9. A method for epitaxial growth of a wafer, characterized in that it is applied to the apparatus of claim 8, said method comprising:
loading the wafer in the susceptor by raising and lowering the wafer support rod;
starting a plurality of heating bulbs to raise the temperature of the reaction chamber to 1100-1150 ℃, and conveying silicon source gas into the upper reaction chamber through the gas inlet so as to grow an epitaxial layer on the surface of the wafer;
the silicon source gas penetrates through the front side of the wafer from the upper reaction chamber and diffuses to the back side of the wafer so as to be discharged from the gap of the reaction chamber into the lower reaction chamber;
exhausting a reaction off-gas including the silicon source gas exhausted to the lower reaction chamber out of the reaction chamber through an exhaust port;
and unloading the wafer which is subjected to the epitaxial deposition reaction from the base by lifting the wafer supporting rod.
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| JPH0722342A (en) * | 1993-06-29 | 1995-01-24 | Sumitomo Sitix Corp | Vapor growth device |
| CN109037136A (en) * | 2017-06-12 | 2018-12-18 | 上海新昇半导体科技有限公司 | The method of the thimble trace of supporting table, improvement wafer or epitaxial growth crystal column surface |
| CN109192696A (en) * | 2018-08-10 | 2019-01-11 | 北京北方华创微电子装备有限公司 | Go up and down needle system, vacuum reaction chamber and semiconductor processing equipment |
| CN211238208U (en) * | 2019-12-13 | 2020-08-11 | 厦门三安光电有限公司 | Wafer ejecting mechanism and wafer dispersing and transferring device |
| CN113604871A (en) * | 2021-08-10 | 2021-11-05 | 西安奕斯伟材料科技有限公司 | Base support frame, device and method for epitaxial growth of silicon wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722342A (en) * | 1993-06-29 | 1995-01-24 | Sumitomo Sitix Corp | Vapor growth device |
| CN109037136A (en) * | 2017-06-12 | 2018-12-18 | 上海新昇半导体科技有限公司 | The method of the thimble trace of supporting table, improvement wafer or epitaxial growth crystal column surface |
| CN109192696A (en) * | 2018-08-10 | 2019-01-11 | 北京北方华创微电子装备有限公司 | Go up and down needle system, vacuum reaction chamber and semiconductor processing equipment |
| CN211238208U (en) * | 2019-12-13 | 2020-08-11 | 厦门三安光电有限公司 | Wafer ejecting mechanism and wafer dispersing and transferring device |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Application publication date: 20220218 |