KR20140092704A - Susceptor and epitaxial reactor inclusing the same - Google Patents

Susceptor and epitaxial reactor inclusing the same Download PDF

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Publication number
KR20140092704A
KR20140092704A KR1020130005095A KR20130005095A KR20140092704A KR 20140092704 A KR20140092704 A KR 20140092704A KR 1020130005095 A KR1020130005095 A KR 1020130005095A KR 20130005095 A KR20130005095 A KR 20130005095A KR 20140092704 A KR20140092704 A KR 20140092704A
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KR
South Korea
Prior art keywords
susceptor
wafer
heat capacity
rear surface
capacity increasing
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KR1020130005095A
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Korean (ko)
Inventor
이진기
강석준
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주식회사 엘지실트론
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Priority to KR1020130005095A priority Critical patent/KR20140092704A/en
Publication of KR20140092704A publication Critical patent/KR20140092704A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

The present invention relates to a susceptor for improving the resistivity uniformity of a wafer, comprising: a susceptor for supporting a wafer during an epitaxial deposition process, the susceptor being provided on an upper surface of the susceptor, A mounting part; A base portion provided at a lower portion of the mounting portion and supporting the mounting portion; And a heat capacity increasing part provided so as to be concentric with the susceptor on the back surface of the susceptor and protruding downward from the back surface of the susceptor.

Description

SUSCEPTOR AND EPITAXIAL REACTOR INCLUSING THE SAME [0002]

The present invention relates to a susceptor and an epitaxial reactor including the same, and more particularly, to a susceptor for improving resistivity uniformity of a wafer and an epitaxial reactor including the susceptor.

Generally, the process of preparing a wafer for a device process comprises manufacturing a silicon ingot and sawing the produced silicon ingot with individual silicon wafers. And then subjected to several processing steps including lapping, grinding, etching and polishing of the so-formed silicon wafers followed by a front face or front and back faces, Thereby forming a wafer having this mirror gloss. And a silicon thin film is grown on the wafer surface by an epitaxial deposition process to prepare a final wafer for device processing.

In general, the epitaxial deposition process is divided into two stages.

In the first prebake step, a silicon wafer is loaded into the deposition chamber and dropped onto the susceptor. Then, the surface of the silicon wafer is pre-baked at a predetermined temperature (for example, 1000 to 1150 ° C) in a state where a cleaning gas such as hydrogen or a mixed gas of hydrogen and hydrogen chloride is applied to the surface of the silicon wafer to clean the surface of the silicon wafer .

In the epitaxial growth process as the second step, a silicon vapor source such as silane or trichlorosilane is applied to the surface of the silicon wafer and the wafer is heated at a predetermined temperature (for example, 800 ° C.) A silicon layer is grown on the surface.

During such high temperature pre-bake and epitaxial growth processes, dopant atoms such as boron or phosphorus are emitted from the back (e.g., backside) of the silicon wafer. In general, the dopant atoms emitted from the back surface of a silicon wafer are emitted to the front surface (e.g., front surface) of the silicon wafer through a gap between a silicon wafer edge and a susceptor. And the diffused dopant atoms are incorporated into the deposition layer growing on the entire surface of the silicon wafer to contaminate the deposition layer and lower the resistivity or resistivity near the edge of the silicon wafer. This is called auto-doping.

Figure 1 is a schematic plan view of an epitaxial reactor according to one embodiment of the present invention. In particular, the epitaxial reactor shown in FIG. 1 is a reactor that performs an epitaxial growth process on a wafer having a diameter of 300 mm or more. 2 is a schematic side cross-sectional view of a susceptor according to the prior art.

As shown in FIG. 1, the epitaxial reactor includes a susceptor on which a wafer is mounted, a central gas supply unit disposed on a side surface of the susceptor and supplying a reaction gas to a central portion of the wafer, A peripheral gas supply unit disposed on both sides of the central gas supply unit for supplying a reaction gas to an edge portion of the wafer, a plurality of lamps arranged radially on the central gas supply unit and the peripheral gas supply unit, And a heating lamp unit.

And, as shown in Fig. 2, the susceptor according to the prior art has a mounting portion on which the wafer is mounted and a back surface made in a plane.

Fig. 3 shows the resistivity distribution of a wafer produced by an epitaxial reactor including a susceptor according to the prior art shown in Fig. 2. Fig. Specifically, the resistivity distribution graph of FIG. 3 measures the resistivity with temperature at a plurality of points located on a horizontal line (that is, a line across the diameter of the wafer) passing through the center of the wafer.

As shown in Fig. 3, the wafers manufactured by the epitaxial reactor and the susceptor according to the prior art exhibit a resistivity higher than the average resistivity of the entire wafer near the half of the radius of the wafer, There is a problem that the resistivity is lower than the average resistivity of the entire wafer and the resistivity at the edge portion of the wafer located on both upper and lower sides of the central portion of the wafer is lower than the average resistivity of the entire wafer.

The causes of such unevenness of resistivity are as follows.

The vicinity of a half of the radius of the wafer is a section in which the flow of the reaction gas supplied from the central gas supply unit and the flow of the reaction gas supplied from the peripheral gas supply unit are overlapped and the thin film thickness of the wafer, So that the resistivity of the wafer is higher than the resistivity of the wafer. Further, the central portion of the wafer is heated to a higher temperature than other regions of the wafer during epitaxial growth due to the lamps arranged to radiate heat to the center portion of the susceptor, the outer circumferential surface of the susceptor being radially arranged, The average thickness of the wafer is increased, and as a result, the resistivity of the wafer is lower than the resistivity of the wafer. In addition, the edge portion of the wafer is also lower in resistivity than the average resistivity of the entire wafer due to the automatic doping phenomenon.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a susceptor and an epitaxial reactor that solve the problems in the prior art.

Specifically, it is an object of the present invention to provide a susceptor and an epitaxial reactor which improve overall resistivity uniformity of a wafer.

According to one embodiment of the present invention, there is provided a susceptor for supporting a wafer during an epitaxial deposition process, the susceptor comprising: a mount provided on an upper surface of the susceptor and on which the wafer is mounted; A base portion provided at a lower portion of the mounting portion and supporting the mounting portion; And a heat capacity increasing part provided on the back surface of the susceptor so as to be concentric with the susceptor and protruding downward from the back surface of the susceptor.

Preferably, the heat capacity increasing portion includes a flat portion extending in a vertical downward direction on a rear surface of the susceptor

Preferably, the heat capacity increasing portion includes: a flat portion extending in a vertical downward direction on a rear surface of the susceptor; a first continuous section extending from an outer edge of the flat portion to a rear surface of the susceptor; And a second continuous section extending from the inner edge of the flat portion to the rear surface of the susceptor.

Preferably, the first continuous section is constituted by an outer inclined section extending obliquely in an outer radial direction of the planar section from an outer edge of the planar section to a rear surface of the susceptor, And an inner inclined portion extending from the inner rim portion to the rear surface of the susceptor so as to be inclined in the inner radial direction of the flat surface portion.

Preferably, the inclination angle of the outer inclined portion and the inclination angle of the inner inclined portion are 45 [deg.].

Preferably, the thickness of the heat capacity increasing portion is 1/3 of the thickness of the base portion.

Preferably, the heat capacity increasing portion is formed to have a predetermined width so that the center circle of the flat portion on the back surface of the susceptor is located at a quarter of the radius of the back surface of the susceptor.

Preferably, the predetermined width of the heat capacity increasing portion is less than 1/4 of the radius of the back surface of the susceptor.

Preferably, the heat capacity increasing portion is formed of the same material as the susceptor.

Preferably, the heat capacity increasing portion is formed on the back surface of the susceptor such that, when the wafer is mounted on the mounting portion, the center of the heat capacity increasing portion is formed on the concentric circle of the back surface corresponding to a half of the radius of the wafer And a circle is formed.

According to another embodiment of the present invention, there is provided a plasma processing apparatus comprising: a susceptor in which a wafer is mounted; A center gas supply unit disposed on a side surface of the susceptor for supplying a reaction gas to a central portion of the wafer, a peripheral gas supply unit disposed on both sides of the center gas supply unit at a side of the susceptor, A gas supply section including a supply section; And a heating lamp unit including a plurality of lamps arranged radially along an outer circumferential surface of the susceptor, wherein the susceptor comprises: a mount for mounting the wafer; A base portion provided at a lower portion of the mounting portion and having a predetermined thickness to support the mounting portion; And a heat capacity increasing portion provided concentrically with the susceptor at a rear surface of the susceptor and protruding downward from a rear surface of the susceptor.

According to the above-mentioned problem solving means, the present invention can reduce the resistivity around the half point of the wafer by increasing the heat capacity of the susceptor, and as a result, the resistivity uniformity of the wafer as a whole can be improved.

Further, the present invention can improve the resistivity uniformity of the wafer in the epitaxial growth process of the wafer in the epitaxial reactor in which the heat lamp portion is radially arranged on the outer peripheral surface of the susceptor by providing the annular heat capacity increase portion in the susceptor .

Further, the present invention can improve the resistivity uniformity of the wafer by minimizing the structure of the existing susceptor, thereby improving the uniformity of the resistivity of the wafer while minimizing the equipment replacement cost of the susceptor and / have.

In addition, the present invention can minimize the thermal conduction discontinuity section and the heat capacity discontinuity section due to the addition of the heat capacity increase section in the susceptor by providing the inclined section tapered in the heat capacity increase section, and as a result, the resistivity uniformity of the wafer can be further improved Can

Figure 1 is a schematic plan view of an epitaxial reactor according to one embodiment of the present invention.
2 is a schematic side cross-sectional view of a susceptor according to the prior art.
Figure 3 shows the resistivity distribution of a wafer produced by a susceptor and an epitaxial reactor according to the prior art.
4 is a schematic rear perspective view of a susceptor in accordance with an embodiment of the present invention.
5 is a schematic side cross-sectional view of a susceptor in accordance with an embodiment of the present invention.
6 is a schematic rear view of a susceptor in accordance with an embodiment of the present invention.
7 is a schematic rear perspective view of a susceptor according to another embodiment of the present invention.
8 is a schematic side cross-sectional view of a susceptor according to another embodiment of the present invention.
9 is a schematic rear view of a susceptor according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be noted that the drawings denoted by the same reference numerals in the drawings denote the same reference numerals whenever possible, in other drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. And certain features shown in the drawings are to be enlarged or reduced or simplified for ease of explanation, and the drawings and their components are not necessarily drawn to scale. However, those skilled in the art will readily understand these details.

The epitaxial reactor 1000 according to the present invention includes a reaction chamber on which epitaxial growth is performed on a wafer W, a susceptor 400 accommodated in the reaction chamber and on which the wafer W is mounted, A gas supply unit 200 for supplying a reaction gas into the chamber, and a heating lamp unit 300 for heating the inside of the reaction chamber.

The gas supply unit 200 includes a central gas supply unit 210 and a peripheral gas supply unit 230 disposed on both sides of the central gas supply unit 210. The central gas supply unit is disposed on a side surface of the susceptor 400 and is configured to supply a reaction gas to a central portion of the wafer W. The peripheral gas supply unit 230 is disposed on the side of the susceptor 400, And is arranged on both sides of the central gas supply unit 210 and is configured to supply the reaction gas to the edge portions of the wafer W.

The plurality of lamps 310 may be radially arranged along the outer circumferential surface of the susceptor 400. The plurality of lamps 310 may include a plurality of lamps 310 (e.g., an infrared lamp 310) do. The plurality of lamps 310 are disposed such that heat applied from the lamp 310 is directed toward the center of the reaction space (that is, toward the center of the susceptor 400).

The susceptor 400 includes a mounting portion 410 on which the wafer W is mounted; A base part 420 provided at a lower portion of the mounting part 410 and having a predetermined thickness H for supporting the mounting part 410; A heat capacity increasing part 440 provided concentrically with the susceptor 400 on the rear surface 430 of the susceptor 400 and protruding downward from the rear surface 430 of the susceptor 400; .

The heat capacity increase part 440 of the susceptor 400 is formed on the rear surface 430 of the susceptor 400 on the basis of the immobilized wafer W, The heat capacity increase part 440 is formed on the concentric circle of the back surface 430 corresponding to a half of the radius of the wafer W when the wafer W is mounted on the mounting part 410 of the susceptor 400. [ (See Figs. 5A and 5B).

The heat capacity increase portion 440 in the susceptor 400 can increase the heat capacity of the susceptor 400 in the vicinity of the half of the wafer W, When the wafer W is heated by the heating lamp unit 300, the temperature of the portion of the susceptor 400 having the heat capacity increasing unit 440 may be raised to a higher temperature than other portions of the susceptor 400 As a result, the resistivity at the portion of the wafer W corresponding to the portion having the heat capacity increasing portion 440 can be reduced. As a result, the resistivity uniformity of the wafer W as a whole can be improved finally.

Hereinafter, the susceptor 400 according to the present invention will be described in more detail with reference to the drawings.

4 is a schematic rear perspective view of a susceptor 400 in accordance with one embodiment of the present invention, FIG. 5 is a schematic side cross-sectional view of a susceptor 400 in accordance with an embodiment of the present invention , Figure 6 is a schematic rear view 430 of a susceptor 400 in accordance with one embodiment of the present invention.

4 through 6, a susceptor 400 according to an embodiment of the present invention supports a wafer W during an epitaxial deposition process, and the susceptor 400 supports a wafer W A base part 420 for supporting the mounting part 410 and a heat capacity increasing part 440 for increasing the heat capacity of the constant part by increasing the thickness of the part of the heat absorbing part 410 .

The mounting portion 410 is provided on the susceptor 400 to mount the wafer W thereon. 4 shows only the mounting part 410 formed of an inclined surface, but the present invention is not limited thereto. For example, the mounting part 410 may be a stepped part.

The base part 420 is provided under the mounting part 410 to support the mounting part 410.

The heat capacity increasing part 440 is formed to protrude downward from the back surface 430 of the susceptor 400, that is, the lower surface of the base part 420. The heat capacity increasing part 440 is provided on the rear surface 430 of the susceptor 400 so as to be concentric with the susceptor 400. [ That is, the heat capacity increasing part 440 serves to increase the thickness of a part of the base part 420 (or the susceptor 400), thereby increasing the weight of the part of the base part 420, Thereby increasing the heat capacity of a portion of the base portion 420.

The heat capacity increasing portion 440 according to the present embodiment is constituted by a planar portion 441 extending in the vertical downward direction on the rear surface 430 of the susceptor 400 (i.e., the base portion 420).

The heat capacity increasing part 440 is formed on the rear surface 430 of the susceptor 400 with respect to the wafer W so that the temperature of the wafer W is increased when the wafer W is mounted on the mounting part 410. [ And the center circle C of the heat capacity increasing portion 440 is positioned on a concentric circle of the back surface 430 corresponding to a half of the radius. That is, the heat capacity increasing part 440 is formed on the rear surface 430 of the base part 420 so as to be located at a vertically lower portion near a half of a radius of the wafer W placed on the mounting part 410.

The heat capacity increasing portion 440 is formed on the rear surface 430 of the susceptor 400 with respect to the rear surface 430 of the susceptor 400 (or the base portion 420) And the center circle C is formed to have a predetermined width so as to be located at a quarter of the radius of the back surface 430 of the susceptor 400. [

At this time, it is preferable that the predetermined width of the heat capacity increasing portion 440 is less than 1/4 of the radius of the back surface 430 of the susceptor 400.

The thickness t of the flat surface portion 441 is preferably 1/3 of the thickness H of the base portion 420. This is because when the thickness t of the heat capacity increasing portion 440 is 1/3 of the thickness H of the base portion 420 as a result of the test by the present applicant, Value had a similar resistivity value to the overall average specific resistance value of the wafer W on which the epitaxial growth was completed.

Preferably, the heat capacity increasing part 440 may be formed of the same material as the susceptor 400.

According to the present invention, the susceptor 400 is provided with the heat capacity increasing portion 440 to reduce the resistivity around the half of the wafer W, and as a result, the wafer W It is possible to improve the resistivity uniformity.

In the epitaxial reactor 1000 in which the heating lamp part 300 is radially disposed on the outer peripheral surface of the susceptor 400 by providing the annular heat capacity increasing part 440 in the susceptor 400, The resistivity uniformity of the wafer W can be improved when the epitaxial growth process of the wafer W is performed.

In addition, the present invention can improve the resistivity uniformity of the wafer W by minimizing the structure of the existing susceptor 400, thereby minimizing the equipment replacement cost of the susceptor 400 and / The resistivity uniformity of the wafer W can be improved.

FIG. 7 is a schematic rear perspective view of a susceptor 400 according to another embodiment of the present invention, and FIG. 8 is a schematic side view of a susceptor 400 according to another embodiment of the present invention. And FIG. 9 is a schematic rear view 430 of a susceptor 400 in accordance with another embodiment of the present invention.

7 to 9, a susceptor 400 according to another embodiment of the present invention supports a wafer W during an epitaxial deposition process, and the susceptor 400 is mounted on a wafer W, A base portion 420 for supporting the mounting portion 410; a heat capacity increasing portion 440 for increasing a thickness of the heat absorbing portion to increase a heat capacity of the certain portion of the heat absorbing portion 410; .

The mounting portion 410 is provided on the susceptor 400 to mount the wafer W thereon. 4 shows only the mounting part 410 formed of an inclined surface, but the present invention is not limited thereto. For example, the mounting part 410 may be a stepped part.

The base part 420 is provided under the mounting part 410 to support the mounting part 410.

The heat capacity increasing part 440 is formed to protrude downward from the back surface 430 of the susceptor 400, that is, the lower surface of the base part 420. The heat capacity increasing part 440 is provided on the rear surface 430 of the susceptor 400 so as to be concentric with the susceptor 400. [ That is, the heat capacity increasing part 440 serves to increase the thickness of a part of the base part 420 (or the susceptor 400), thereby increasing the weight of the part of the base part 420, Thereby increasing the heat capacity of a portion of the base portion 420.

The heat capacity increasing portion 440 according to the present embodiment includes a planar portion 441 extending vertically downward to the rear surface 430 of the susceptor 400 (i.e., the base portion 420) A first continuous section 443 extending from the outer edge of the susceptor 400 to the rear surface 430 of the susceptor 400 and a second continuous section 443 extending from the inner edge of the plane section 441 to the rear surface of the susceptor 400 430 extending from the first continuous section 445 to the second continuous section 445.

The first continuous section 443 extends from the outer edge of the planar section 441 to the rear surface 430 of the susceptor 400 by an outer inclined section that extends obliquely in the outer radial direction of the planar section 441 .

At this time, preferably, the inclination angle of the outer inclined portion may be 45 °.

The second continuous section 445 is an inner inclined part extending from the inner edge of the flat surface part 441 to the rear surface 430 of the susceptor 400 so as to extend in an inner radial direction of the flat surface part 441 .

At this time, preferably, the inclination angle of the inner inclined portion may be 45 °.

However, the present invention is not limited to the inclined portion in the first continuous section 443 and the second continuous section 445, and may include, for example, the first continuous section 443 and the second continuous section 445, The second continuous section 445 may be a curved surface section.

 By providing the first continuous section 443 and the second continuous section 445 in the heat capacity increasing section 440 as described above, the heat conduction discontinuity section due to the addition of the heat capacity increasing section 440 in the susceptor 400, The heat capacity discontinuity section can be minimized, and as a result, the resistivity uniformity of the wafer W can be further improved.

The heat capacity increasing part 440 is formed on the rear surface 430 of the susceptor 400 with respect to the wafer W so that the temperature of the wafer W is increased when the wafer W is mounted on the mounting part 410. [ And the center circle C of the heat capacity increasing portion 440 is positioned on a concentric circle of the back surface 430 corresponding to a half of the radius. That is, the heat capacity increasing part 440 is formed on the rear surface 430 of the base part 420 so as to be located at a vertically lower portion near a half of a radius of the wafer W placed on the mounting part 410.

The heat capacity increasing portion 440 is formed on the rear surface 430 of the susceptor 400 with respect to the rear surface 430 of the susceptor 400 (or the base portion 420) And the center circle C is formed to have a predetermined width so as to be located at a quarter of the radius of the back surface 430 of the susceptor 400. [

At this time, it is preferable that the predetermined width of the heat capacity increasing portion 440 is less than 1/4 of the radius of the back surface 430 of the susceptor 400.

The thickness t of the flat surface portion 441 is preferably 1/3 of the thickness H of the base portion 420. This is because when the thickness t of the heat capacity increasing portion 440 is 1/3 of the thickness H of the base portion 420 as a result of the test by the present applicant, Value had a similar resistivity value to the overall average specific resistance value of the wafer W on which the epitaxial growth was completed.

Preferably, the heat capacity increasing part 440 may be formed of the same material as the susceptor 400.

According to the present invention, the susceptor 400 is provided with the heat capacity increasing portion 440 to reduce the resistivity around the half of the wafer W, and as a result, the wafer W It is possible to improve the resistivity uniformity.

In the epitaxial reactor 1000 in which the heating lamp part 300 is radially disposed on the outer peripheral surface of the susceptor 400 by providing the annular heat capacity increasing part 440 in the susceptor 400, The resistivity uniformity of the wafer W can be improved when the epitaxial growth process of the wafer W is performed.

In addition, the present invention can improve the resistivity uniformity of the wafer W by minimizing the structure of the existing susceptor 400, thereby minimizing the equipment replacement cost of the susceptor 400 and / The resistivity uniformity of the wafer W can be improved.

In addition, since the inclined portion is tapered in the heat capacity increasing portion 440, the heat conduction discontinuity portion and the heat capacity discontinuity portion due to the addition of the heat capacity increasing portion 440 in the susceptor 400 can be minimized, As a result, the resistivity uniformity of the wafer W can be further improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, . ≪ / RTI > Accordingly, such modifications are deemed to be within the scope of the present invention, and the scope of the present invention should be determined by the following claims.

1000: epitaxial reactor
200: gas supply part
210: Central gas supply part
230: peripheral gas supply
300: heating lamp part
310: lamp
400: susceptor
410:
420: Base portion
430:
440: Heat capacity increase part

Claims (11)

A susceptor for supporting a wafer during an epitaxial deposition process,
A mounting portion provided on an upper surface of the susceptor and on which the wafer is mounted;
A base portion provided at a lower portion of the mounting portion and supporting the mounting portion;
And a heat capacity increasing portion provided concentrically with the susceptor at a rear surface of the susceptor and protruding downward from a rear surface of the susceptor. The method according to claim 1,
Wherein the heat capacity increasing portion includes a flat portion extending in a vertical downward direction on a rear surface of the susceptor. The method according to claim 1,
The heat-
A planar portion extending in a vertical downward direction on a rear surface of the susceptor,
A first continuous section extending from an outer edge of the flat portion to a rear surface of the susceptor,
And a second continuous section extending from an inner edge of the flat portion to a rear surface of the susceptor. The method of claim 3,
Wherein the first continuous section is composed of an outer inclined portion extending from an outer edge portion of the planar portion to a rear surface of the susceptor so as to incline in an outer radial direction of the planar portion,
And the second continuous section is composed of an inner inclined part extending from the inner edge of the flat part to the rear surface of the susceptor so as to be inclined in the inner radial direction of the flat part. 5. The method of claim 4,
Wherein the inclination angle of the outer inclined portion and the inclination angle of the inner inclined portion are 45 [deg.]. 6. The method according to any one of claims 1 to 5,
Wherein the thickness of the heat capacity increasing portion is 1/3 of the thickness of the base portion. 6. The method according to any one of claims 1 to 5,
Wherein the heat capacity increasing portion is formed to have a predetermined width so that the center circle of the flat portion on the back surface of the susceptor is located at a quarter of the radius of the back surface of the susceptor. 8. The method of claim 7,
Wherein the predetermined width of the heat capacity increasing portion is less than 1/4 of the radius of the back surface of the susceptor. 6. The method according to any one of claims 1 to 5,
Wherein the heat capacity increasing portion is made of the same material as the susceptor. The method according to claim 1,
The heat capacity increasing portion is formed on the back surface of the susceptor so that the center circle of the heat capacity increasing portion is located on a concentric circle of the back surface corresponding to a half of the radius of the wafer when the wafer is placed on the mounting portion ≪ / RTI > A susceptor on which a wafer is mounted;
A center gas supply unit disposed on a side surface of the susceptor for supplying a reaction gas to a central portion of the wafer, a peripheral gas supply unit disposed on both sides of the center gas supply unit at a side of the susceptor, A gas supply section including a supply section; And
And a plurality of lamps arranged radially along an outer circumferential surface of the susceptor,
Wherein the susceptor comprises:
A mounting part on which the wafer is mounted;
A base portion provided at a lower portion of the mounting portion and having a predetermined thickness to support the mounting portion;
And a heat capacity increasing portion provided concentrically with the susceptor at a rear surface of the susceptor and protruding downward from a rear surface of the susceptor.
KR1020130005095A 2013-01-16 2013-01-16 Susceptor and epitaxial reactor inclusing the same KR20140092704A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170126503A (en) * 2015-04-27 2017-11-17 가부시키가이샤 사무코 Susceptor and epitaxial growth device
CN109421987A (en) * 2017-08-30 2019-03-05 株式会社岛津制作所 Supporting plate used for optical elements and bale packing container
KR20210122475A (en) * 2020-04-01 2021-10-12 에스케이실트론 주식회사 Susceptor and apparatur for manufacturing wafer including the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170126503A (en) * 2015-04-27 2017-11-17 가부시키가이샤 사무코 Susceptor and epitaxial growth device
CN109421987A (en) * 2017-08-30 2019-03-05 株式会社岛津制作所 Supporting plate used for optical elements and bale packing container
CN109421987B (en) * 2017-08-30 2020-08-07 株式会社岛津制作所 Pallet for optical element and packaging container
KR20210122475A (en) * 2020-04-01 2021-10-12 에스케이실트론 주식회사 Susceptor and apparatur for manufacturing wafer including the same

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