CN111378932B - 基板载置方法、成膜方法、成膜装置及有机el面板的制造系统 - Google Patents

基板载置方法、成膜方法、成膜装置及有机el面板的制造系统 Download PDF

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CN111378932B
CN111378932B CN201911324615.9A CN201911324615A CN111378932B CN 111378932 B CN111378932 B CN 111378932B CN 201911324615 A CN201911324615 A CN 201911324615A CN 111378932 B CN111378932 B CN 111378932B
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substrate
mask
film forming
alignment mark
pressing
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CN111378932A (zh
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古谷正基
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Canon Tokki Corp
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Canon Tokki Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201911324615.9A 2018-12-26 2019-12-20 基板载置方法、成膜方法、成膜装置及有机el面板的制造系统 Active CN111378932B (zh)

Applications Claiming Priority (2)

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JP2018-241977 2018-12-26
JP2018241977A JP7269000B2 (ja) 2018-12-26 2018-12-26 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム

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CN111378932A CN111378932A (zh) 2020-07-07
CN111378932B true CN111378932B (zh) 2023-11-10

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KR (1) KR102853777B1 (enExample)
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7337108B2 (ja) * 2021-01-28 2023-09-01 キヤノントッキ株式会社 アライメント装置、成膜装置および調整方法
KR102549181B1 (ko) * 2021-03-09 2023-06-29 피에스케이홀딩스 (주) 기판 처리 장치 및 기판 처리 방법
JP7462696B2 (ja) * 2022-04-25 2024-04-05 キヤノントッキ株式会社 ワーク保持装置、アライメント装置及び成膜装置
JP2024035289A (ja) * 2022-09-02 2024-03-14 キヤノントッキ株式会社 成膜装置、成膜装置の駆動方法、及び成膜方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004027291A (ja) * 2002-06-25 2004-01-29 Tokki Corp 蒸着装置
JP2006176809A (ja) * 2004-12-21 2006-07-06 Ulvac Japan Ltd 基板とマスクのアライメント方法および有機薄膜蒸着方法ならびにアライメント装置
JP2009024208A (ja) * 2007-07-18 2009-02-05 Fujifilm Corp 蒸着装置及び蒸着方法並びにその方法を用いてパターン形成した層を有する電子素子及び有機エレクトロルミネッセンス素子
JP2010086809A (ja) * 2008-09-30 2010-04-15 Canon Anelva Corp 保持装置、マスクのアライメント方法、基板処理装置、電子放出素子ディスプレイの生産方法及び有機ｅｌディスプレイの生産方法
CN101783397A (zh) * 2008-12-15 2010-07-21 株式会社日立高新技术 有机el器件制造装置、成膜装置及其成膜方法、液晶显示基板制造、定位装置及定位方法
CN101970707A (zh) * 2007-12-27 2011-02-09 佳能安内华股份有限公司 处理装置及电子发射元件和有机el显示器的生产方法
CN105026051A (zh) * 2013-02-26 2015-11-04 东丽工程株式会社 基板处理装置、掩模设置方法、膜形成装置及膜形成方法
CN105593396A (zh) * 2013-09-27 2016-05-18 佳能特机株式会社 对准方法以及对准装置
CN107710397A (zh) * 2015-06-12 2018-02-16 株式会社爱发科 基板保持装置、成膜装置和基板保持方法
CN108624857A (zh) * 2017-05-22 2018-10-09 佳能特机株式会社 基板载置方法和机构、成膜方法和装置、电子器件制造方法及有机el显示装置制造方法
CN108677158A (zh) * 2017-05-22 2018-10-19 佳能特机株式会社 基板搬送机构、基板载置机构、成膜装置及其方法
JP2018197361A (ja) * 2017-05-22 2018-12-13 キヤノントッキ株式会社 基板載置装置、成膜装置、基板載置方法、成膜方法、および電子デバイスの製造方法
JP2019039072A (ja) * 2017-08-25 2019-03-14 キヤノントッキ株式会社 アライメント方法、アライメント装置、これを含む真空蒸着方法及び真空蒸着装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4773834B2 (ja) 2006-02-03 2011-09-14 キヤノン株式会社 マスク成膜方法およびマスク成膜装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004027291A (ja) * 2002-06-25 2004-01-29 Tokki Corp 蒸着装置
JP2006176809A (ja) * 2004-12-21 2006-07-06 Ulvac Japan Ltd 基板とマスクのアライメント方法および有機薄膜蒸着方法ならびにアライメント装置
JP2009024208A (ja) * 2007-07-18 2009-02-05 Fujifilm Corp 蒸着装置及び蒸着方法並びにその方法を用いてパターン形成した層を有する電子素子及び有機エレクトロルミネッセンス素子
CN101970707A (zh) * 2007-12-27 2011-02-09 佳能安内华股份有限公司 处理装置及电子发射元件和有机el显示器的生产方法
JP2010086809A (ja) * 2008-09-30 2010-04-15 Canon Anelva Corp 保持装置、マスクのアライメント方法、基板処理装置、電子放出素子ディスプレイの生産方法及び有機ｅｌディスプレイの生産方法
CN101783397A (zh) * 2008-12-15 2010-07-21 株式会社日立高新技术 有机el器件制造装置、成膜装置及其成膜方法、液晶显示基板制造、定位装置及定位方法
CN105026051A (zh) * 2013-02-26 2015-11-04 东丽工程株式会社 基板处理装置、掩模设置方法、膜形成装置及膜形成方法
CN105593396A (zh) * 2013-09-27 2016-05-18 佳能特机株式会社 对准方法以及对准装置
CN107710397A (zh) * 2015-06-12 2018-02-16 株式会社爱发科 基板保持装置、成膜装置和基板保持方法
CN108624857A (zh) * 2017-05-22 2018-10-09 佳能特机株式会社 基板载置方法和机构、成膜方法和装置、电子器件制造方法及有机el显示装置制造方法
CN108677158A (zh) * 2017-05-22 2018-10-19 佳能特机株式会社 基板搬送机构、基板载置机构、成膜装置及其方法
JP2018197361A (ja) * 2017-05-22 2018-12-13 キヤノントッキ株式会社 基板載置装置、成膜装置、基板載置方法、成膜方法、および電子デバイスの製造方法
JP2019039072A (ja) * 2017-08-25 2019-03-14 キヤノントッキ株式会社 アライメント方法、アライメント装置、これを含む真空蒸着方法及び真空蒸着装置

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CN111378932A (zh) 2020-07-07
JP2020105538A (ja) 2020-07-09
KR102853777B1 (ko) 2025-09-01
KR20200080148A (ko) 2020-07-06
JP7269000B2 (ja) 2023-05-08

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