KR102853777B1 - 기판 재치 방법, 성막 방법, 성막 장치, 및 유기 el 패널의 제조 시스템 - Google Patents

기판 재치 방법, 성막 방법, 성막 장치, 및 유기 el 패널의 제조 시스템

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Publication number
KR102853777B1
KR102853777B1 KR1020190164050A KR20190164050A KR102853777B1 KR 102853777 B1 KR102853777 B1 KR 102853777B1 KR 1020190164050 A KR1020190164050 A KR 1020190164050A KR 20190164050 A KR20190164050 A KR 20190164050A KR 102853777 B1 KR102853777 B1 KR 102853777B1
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substrate
mask
substrate support
pressing
alignment
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KR20200080148A (ko
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마사키 후루타니
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캐논 톡키 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020190164050A 2018-12-26 2019-12-10 기판 재치 방법, 성막 방법, 성막 장치, 및 유기 el 패널의 제조 시스템 Active KR102853777B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-241977 2018-12-26
JP2018241977A JP7269000B2 (ja) 2018-12-26 2018-12-26 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム

Publications (2)

Publication Number Publication Date
KR20200080148A KR20200080148A (ko) 2020-07-06
KR102853777B1 true KR102853777B1 (ko) 2025-09-01

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Country Link
JP (1) JP7269000B2 (enExample)
KR (1) KR102853777B1 (enExample)
CN (1) CN111378932B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7337108B2 (ja) * 2021-01-28 2023-09-01 キヤノントッキ株式会社 アライメント装置、成膜装置および調整方法
KR102549181B1 (ko) * 2021-03-09 2023-06-29 피에스케이홀딩스 (주) 기판 처리 장치 및 기판 처리 방법
JP7462696B2 (ja) * 2022-04-25 2024-04-05 キヤノントッキ株式会社 ワーク保持装置、アライメント装置及び成膜装置
JP2024035289A (ja) * 2022-09-02 2024-03-14 キヤノントッキ株式会社 成膜装置、成膜装置の駆動方法、及び成膜方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004027291A (ja) 2002-06-25 2004-01-29 Tokki Corp 蒸着装置
JP2006176809A (ja) 2004-12-21 2006-07-06 Ulvac Japan Ltd 基板とマスクのアライメント方法および有機薄膜蒸着方法ならびにアライメント装置
JP2009024208A (ja) * 2007-07-18 2009-02-05 Fujifilm Corp 蒸着装置及び蒸着方法並びにその方法を用いてパターン形成した層を有する電子素子及び有機エレクトロルミネッセンス素子
JP2018197361A (ja) * 2017-05-22 2018-12-13 キヤノントッキ株式会社 基板載置装置、成膜装置、基板載置方法、成膜方法、および電子デバイスの製造方法

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* Cited by examiner, † Cited by third party
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JP4773834B2 (ja) * 2006-02-03 2011-09-14 キヤノン株式会社 マスク成膜方法およびマスク成膜装置
US20100273387A1 (en) * 2007-12-27 2010-10-28 Canon Anelva Corporation Processing Apparatus and Method of Manufacturing Electron Emission Element and Organic EL Display
JP2010086809A (ja) * 2008-09-30 2010-04-15 Canon Anelva Corp 保持装置、マスクのアライメント方法、基板処理装置、電子放出素子ディスプレイの生産方法及び有機ｅｌディスプレイの生産方法
TWI401832B (zh) * 2008-12-15 2013-07-11 Hitachi High Tech Corp Organic electroluminescent light making device, film forming apparatus and film forming method, liquid crystal display substrate manufacturing apparatus, and calibration apparatus and calibration method
KR20150125935A (ko) * 2013-02-26 2015-11-10 토레이 엔지니어링 컴퍼니, 리미티드 기판 처리 장치, 마스크의 세트 방법, 막 형성 장치 및 막 형성 방법
JP6250999B2 (ja) * 2013-09-27 2017-12-20 キヤノントッキ株式会社 アライメント方法並びにアライメント装置
SG11201710300SA (en) * 2015-06-12 2018-01-30 Ulvac Inc Substrate holding device, film deposition device, and substrate holding method
JP6448067B2 (ja) * 2017-05-22 2019-01-09 キヤノントッキ株式会社 基板載置方法、基板載置機構、成膜方法、成膜装置及び電子デバイスの製造方法
JP6468540B2 (ja) * 2017-05-22 2019-02-13 キヤノントッキ株式会社 基板搬送機構、基板載置機構、成膜装置及びそれらの方法
KR101866139B1 (ko) * 2017-08-25 2018-06-08 캐논 톡키 가부시키가이샤 얼라인먼트 방법, 얼라인먼트 장치, 이를 포함하는 진공증착방법 및 진공증착장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004027291A (ja) 2002-06-25 2004-01-29 Tokki Corp 蒸着装置
JP2006176809A (ja) 2004-12-21 2006-07-06 Ulvac Japan Ltd 基板とマスクのアライメント方法および有機薄膜蒸着方法ならびにアライメント装置
JP2009024208A (ja) * 2007-07-18 2009-02-05 Fujifilm Corp 蒸着装置及び蒸着方法並びにその方法を用いてパターン形成した層を有する電子素子及び有機エレクトロルミネッセンス素子
JP2018197361A (ja) * 2017-05-22 2018-12-13 キヤノントッキ株式会社 基板載置装置、成膜装置、基板載置方法、成膜方法、および電子デバイスの製造方法

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CN111378932B (zh) 2023-11-10
JP7269000B2 (ja) 2023-05-08
KR20200080148A (ko) 2020-07-06
JP2020105538A (ja) 2020-07-09
CN111378932A (zh) 2020-07-07

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