CN111312672A - Power semiconductor assembly - Google Patents

Power semiconductor assembly Download PDF

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Publication number
CN111312672A
CN111312672A CN202010213572.3A CN202010213572A CN111312672A CN 111312672 A CN111312672 A CN 111312672A CN 202010213572 A CN202010213572 A CN 202010213572A CN 111312672 A CN111312672 A CN 111312672A
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CN
China
Prior art keywords
power semiconductor
ceramic
ceramic substrate
metal layer
layer
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Pending
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CN202010213572.3A
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Chinese (zh)
Inventor
张熙宇
陈水兵
刘勇
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Shenzhen Megmeet Electrical Co Ltd
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Shenzhen Megmeet Electrical Co Ltd
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Priority to CN202010213572.3A priority Critical patent/CN111312672A/en
Publication of CN111312672A publication Critical patent/CN111312672A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to the technical field of power semiconductor devices, in particular to a power semiconductor assembly. Embodiments of the invention provide a power semiconductor assembly comprising a semiconductor solder device and a heat sink connected by screws, wherein the semiconductor solder device comprises a power semiconductor device and a ceramic metal composite substrate soldered together. The power semiconductor device and the ceramic metal composite substrate are welded together, so that the components in the power semiconductor assembly can be conveniently arranged in a layer-by-layer contraposition mode. In addition, the first metal layer and the second metal layer are arranged, so that the ceramic substrate is not easy to crack under the condition of a small thickness. Therefore, the thermal resistance of the ceramic substrate can be reduced by reducing the thickness of the ceramic substrate, so that the heat dissipation efficiency of the power semiconductor device is improved.

Description

Power semiconductor assembly
Technical Field
The invention relates to the technical field of power semiconductor devices, in particular to a power semiconductor assembly.
Background
The power semiconductor device is also called a power electronic device and is mainly used for converting electric energy of a power electronic circuit. When the power semiconductor device works, the device is heated and heated due to power loss, and the service life of the power semiconductor device is shortened and even the power semiconductor device is burnt due to overhigh temperature.
In order to ensure that the heat generated by the power semiconductor device can be dissipated effectively, the power semiconductor device is usually directly fastened to the heat sink. Since the copper frame at the bottom of the power semiconductor device is charged, it must also meet the insulation requirements when it is connected to a heat sink. For example, an insulating ceramic substrate may be added between the power semiconductor device and the heat sink, and heat conductive silicone grease may be coated on both sides of the ceramic substrate, and then the power semiconductor device may be fixed on the heat sink by means of locking with a screw bead or compressing with an elastic sheet.
In the process of implementing the present invention, the inventor found that in the prior art, since the ceramic substrate is brittle, a larger thickness is usually required to ensure that the ceramic substrate is not easily cracked during the process of locking the power semiconductor on the heat sink. However, the larger the thickness of the ceramic substrate is, the higher the thermal resistance of the ceramic substrate itself is, which is not favorable for heat dissipation.
Disclosure of Invention
In order to solve the problem of high thermal resistance of the power ceramic substrate caused by large thickness, the embodiment of the invention provides the power semiconductor component, wherein the metal layers are arranged on the two sides of the ceramic substrate, so that the ceramic substrate is not easy to break when the thickness of the ceramic substrate is small, and the thermal resistance of the ceramic substrate can be reduced by reducing the thickness of the ceramic substrate.
In order to solve the above technical problem, an embodiment of the present invention provides the following technical solutions:
the embodiment of the invention provides a power semiconductor assembly, which comprises a semiconductor welding device and a radiator which are connected through screws; wherein the content of the first and second substances,
the semiconductor welding device comprises a power semiconductor device and a ceramic metal composite substrate welded with the power semiconductor device;
the ceramic-metal composite substrate comprises a ceramic substrate, and a first metal layer and a second metal layer which are respectively arranged on the surfaces of the two sides of the ceramic substrate;
the first metal layer is located between the power semiconductor device and the ceramic substrate, and the second metal layer is located between the ceramic substrate and the radiator.
Optionally, a heat conducting silicone grease layer is disposed between the second metal layer and the heat sink.
Optionally, a welding layer is arranged between the power semiconductor device and the first metal layer;
the power semiconductor device is welded with the first metal layer through the welding layer.
Optionally, the solder layer comprises a printed solder paste layer or a preformed solder sheet layer.
Optionally, the edges of the first metal layer and the second metal layer are located inside the edge of the ceramic substrate.
Optionally, the first metal layer and the second metal layer are copper layers.
Optionally, a first through hole is formed in the power semiconductor device, a second through hole is formed in the ceramic metal composite substrate, and the screw is connected with the radiator sequentially through the first through hole and the second through hole.
Optionally, the second through hole includes a third through hole, a fourth through hole and a fifth through hole; wherein the content of the first and second substances,
the third through hole is formed in the first metal layer, the fourth through hole is formed in the ceramic substrate, the fifth through hole is formed in the second metal layer, and the aperture of the fourth through hole is smaller than that of the third through hole and that of the fifth through hole.
Optionally, the thickness of the ceramic substrate is 0.1mm to 1.0mm, and the thicknesses of the first metal layer and the second metal layer are both 0.1mm to 1.0 mm.
Optionally, a total thickness of the first metal layer, the ceramic substrate layer, and the second metal layer is less than or equal to 2.0 mm.
The beneficial effects of the embodiment of the invention are as follows: in contrast to the state of the art, embodiments of the present invention provide a power semiconductor assembly comprising a semiconductor device and a heat sink connected by screws, wherein the semiconductor device comprises a power semiconductor device and a ceramic metal composite substrate soldered together. The power semiconductor device and the ceramic metal composite substrate are welded together, so that the components in the power semiconductor assembly can be conveniently arranged in a layer-by-layer contraposition mode. In addition, the first metal layer and the second metal layer are arranged, so that the ceramic substrate is not easy to crack under the condition of a small thickness. Therefore, the thermal resistance of the ceramic substrate can be reduced by reducing the thickness of the ceramic substrate, so that the heat dissipation efficiency of the power semiconductor device is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below. It is obvious that the drawings described below are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 is a schematic structural diagram of a power semiconductor device according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a ceramic metal composite substrate according to an embodiment of the present invention;
FIG. 3 is a schematic top view of a ceramic metal composite substrate according to an embodiment of the present invention;
FIG. 4 is a schematic bottom view of a ceramic metal composite substrate according to an embodiment of the present invention;
fig. 5 is a flow chart of an assembly process of a power semiconductor device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It should be noted that, if not conflicted, the various features of the embodiments of the invention may be combined with each other within the scope of protection of the invention. Additionally, while functional block divisions are performed in the device diagrams, with logical sequences shown in the flowcharts, in some cases, the steps shown or described may be performed in a different order than the block divisions in the device diagrams, or the flowcharts.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The power semiconductor device is one of basic components of electronic products, and has very wide application in the power electronic industry. In order to achieve a good heat dissipation and insulation effect of the power semiconductor device, a heat dissipation insulating medium is generally required to be arranged between the power semiconductor device and the heat sink, and then the power semiconductor device is fixed on the heat sink through screws.
As one of heat dissipation insulating media between the power semiconductor device and the radiator, the ceramic substrate has the advantages of high temperature resistance, good electrical insulating property, high heat conductivity coefficient and the like. However, the ceramic substrate has a high brittleness, which makes it more demanding for the flatness of the heat sink and the ceramic substrate itself, and the magnitude of the torsion during assembly. Moreover, even if cracks occur, the ceramic substrate is difficult to be found, and great disadvantages exist in application. Therefore, the power semiconductor component provided by the invention adopts the ceramic substrate with the copper coated on the two sides as the heat dissipation insulating medium, can greatly reduce the thickness of the ceramic substrate, improve the overall strength of the ceramic substrate and effectively avoid the situation that the ceramic substrate is broken and cracked in the process of locking and fixing the screw. In order to facilitate an understanding of the invention, reference will now be made to specific examples.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a power semiconductor assembly according to an embodiment of the present invention, and as shown in fig. 1, a power semiconductor assembly 10 sequentially includes a screw 11, a power semiconductor device 12 connected by the screw 11, a ceramic substrate 13, and a heat sink 14; the two side surfaces of the ceramic substrate 13 are respectively provided with a first metal layer 15 and a second metal layer 16 which are insulated from each other, the power semiconductor device 12 is fixedly connected with the first metal layer 15, and the radiator 14 is connected with the second metal layer 16.
The power semiconductor device 12 in the embodiment of the present invention may be a power semiconductor discrete device, such as a power field effect transistor, an insulated gate bipolar transistor, a diode, and the like. The ceramic substrate 13 may be an alumina ceramic substrate or an aluminum nitride ceramic substrate. The aluminum oxide ceramic and the aluminum nitride ceramic have higher thermal conductivity, wherein the thermal conductivity of the aluminum oxide ceramic is 20-28W/m.k, and the thermal conductivity of the aluminum nitride ceramic is 100-260W/m.k. The ceramic substrate 13, the first metal layer 15 and the second metal layer 16 together constitute a ceramic-metal composite substrate. The ceramic composite metal substrate plays a role in heat conduction and insulation. The material comprising the first metal layer 15 and the second metal layer 16 may be any suitable metal with good thermal conductivity, such as copper metal. When the material of the first metal layer 15 and the second metal layer 16 is metallic copper, the ceramic metal composite substrate is also referred to as a double-sided copper-clad ceramic substrate.
In some embodiments, the fixed connection of the power semiconductor device 12 and the first metal layer 15 is soldering. The ceramic composite metal substrate is welded at the corresponding position of the power semiconductor device through a brazing process. Optionally, in some embodiments of the present invention, the power semiconductor device 12 is connected to the first metal layer 15 by a solder layer 17. Alternatively, the solder layer 17 may be a printed solder paste layer or a preformed solder pad layer. The soldering method in the embodiment of the invention comprises reflow soldering. The solder in the embodiment of the invention can be brazing alloy with the melting point of 138-400 ℃. Generally, the thermal conductivity of the solder material is much greater than that of the thermal grease, so that the soldering method can greatly improve the heat dissipation efficiency of the power semiconductor assembly 10 compared to the bonding method using the thermal grease.
In the prior art, a ceramic substrate in a power semiconductor component is usually coated with heat-conducting silicone grease on both sides, and then is fixed between a power semiconductor device and a radiator in a locking manner of a screw pressing bar or a spring plate pressing manner. The ceramic substrate and the power semiconductor device need to be installed in a layer-by-layer alignment mode, and high requirements are placed on positioning of all parts and design and processing of a tool clamp. In the embodiment of the present invention, the power semiconductor device 12 and the ceramic metal composite substrate are welded to form an assembly (i.e., a semiconductor welding device), and when the power semiconductor assembly 10 is mounted, the semiconductor welding device is directly mounted on the heat sink 14 by screws, without the need of layer-by-layer alignment mounting of the ceramic substrate 14 and the power semiconductor device 12, so as to reduce the requirement for mounting operation.
The ceramic substrate 13, the first metal layer 15 and the second metal layer 16 in the embodiment of the present invention need to be tightly bonded under specific conditions. In some embodiments, the first and second metal layers 15 and 16 are bonded to both side surfaces of the ceramic substrate 13 by means of bonding. For example, after copper metal is coated on both sides of the ceramic substrate 13, the copper metal is heated at 1065-1085 ℃ to form eutectic melt with aluminum oxide or aluminum nitride due to high temperature oxidation and diffusion, so that the copper metal is bonded with the ceramic substrate to form the ceramic-metal composite substrate. The bonding between the first and second metal layers 15 and 16 of the ceramic metal composite substrate and the ceramic substrate 13 is stronger.
In some embodiments, the power semiconductor device 12 is provided with a first through hole (not shown), the ceramic metal composite substrate is provided with a second through hole, and the screw 11 is connected to the heat sink 14 through the first through hole and the second through hole in sequence. In other embodiments, screw insulators (not shown) are embedded in the heat sink 14 to insulate the screws 11 from the heat sink. The screw 11 in the embodiment of the present invention may be a combination machine screw or a tapping screw.
Referring to fig. 2, fig. 3 and fig. 4, fig. 2, fig. 3 and fig. 4 are schematic cross-sectional, top and bottom views of a ceramic-metal composite substrate according to an embodiment of the present invention. As shown in fig. 2, 3 and 4, in some embodiments, the second through holes further include a third through hole 151 formed in the first metal layer 15, a fourth through hole 131 formed in the ceramic substrate 13, and a fifth through hole 161 formed in the second metal layer, and centers of the third through hole 151, the fourth through hole 131 and the fifth through hole 161 are located on the same axis. Optionally, in some embodiments of the present invention, the third through hole 151, the fourth through hole 131, and the fifth through hole 161 are all cylindrical through holes.
In some embodiments, in order to ensure an insulating state between the first metal layer 15 and the second metal layer 16, the aperture of the fourth through hole 131 is smaller than the aperture of the third through hole 151 and the fifth through hole 161; in addition, the area of the first metal layer 15 is smaller than that of the upper surface of the ceramic substrate 13, and the area of the second metal layer 16 is smaller than that of the lower surface of the ceramic substrate 13; also, the edges of the first metal layer 15 and the second metal layer 16 are located inside the edges of the ceramic substrate 13.
In the embodiment of the invention, the total thickness of the ceramic-metal composite substrate is less than or equal to 2.0 mm. Wherein, the thickness of the ceramic substrate 13 layer is 0.1mm-1.0mm, and the thickness of the first metal layer 15 and the second metal layer 16 are both 0.1mm-1.0 mm. The thickness of the ceramic substrate is generally more than 0.6mm in the traditional design and is easy to break when the screw is locked, and the thickness of the ceramic substrate can be reduced by at least half by using the ceramic-metal composite substrate to replace the traditional ceramic substrate. In addition, compared with the traditional ceramic substrate, the overall strength of the ceramic-metal composite substrate in the embodiment of the invention is greatly improved. Therefore, the ceramic substrate 13 is not easily broken when being locked by screws. Meanwhile, the thermal resistance of the ceramic substrate 13 is further lowered due to the reduction in thickness of the ceramic substrate 13.
To fill the air gap between the second metal layer 16 and the heat sink 14 for greater thermal conductivity, in some embodiments, a layer of thermally conductive silicone 18 is disposed between the second metal layer 16 and the heat sink 14. The thermal grease layer 18 functions to conduct heat dissipated by the power semiconductor device 12 to the heat sink 14. In heat dissipation and heat conduction applications, voids occur even when two surfaces, which have very clean surfaces, are in contact with each other. Since the air in these voids is a poor conductor of heat, it hinders the conduction of heat to the heat sink 14; the heat-conducting silicone grease can fill the gaps, so that heat can be conducted more smoothly and rapidly.
The heat-conducting silicone grease is a heat-conducting silicone grease-like compound prepared by taking organic silicone as a main raw material and adding a material with heat resistance and excellent heat-conducting property. The heat-conducting silicone grease has excellent electrical insulation and excellent heat-conducting property; meanwhile, the method has a wide temperature use range and has no corrosion effect on contacted metal. When in use, the heat-conducting silicone grease is only coated on the contact surfaces of the second metal layer 16 or the heat sink 14, so that the air gap between the contact surfaces can be eliminated.
Although the heat conductive silicone grease can fill the air gap between the second metal layer 16 and the heat sink 14 to obtain a larger heat conductivity, the heat conductivity is always lower than that of the metal heat sink 14, if the coating is too thick, the coating does not improve the heat conductivity, but is not beneficial to heat dissipation, and if the coating is too thin, the coating cannot effectively fill the air gap between the heat sink and the heat generating component, and the effect of improving the heat conductivity is not obvious enough. In some embodiments, the thickness of the heat conductive silicone grease may be 0.08mm to 0.12mm in order to obtain a good heat conductive effect.
The heat dissipation mode of the radiator in the embodiment of the invention comprises natural cooling, forced air cooling and water cooling. In some embodiments, the heat sink 14 may be a heat-dissipating substrate. The heat dissipation substrate can be a metal substrate with excellent heat conductivity according to requirements, and the material of the heat dissipation substrate includes, but is not limited to, copper-based materials, aluminum-based materials and the like. In other embodiments, one end of the radiator is provided with a mounting platform provided with a mounting hole, and the other end of the radiator is provided with a radiating tooth sheet structure; the heat dissipation tooth sheet is composed of a plurality of sheet-shaped heat dissipation structures which are arranged in parallel and have a certain distance. The heat sink absorbs heat through the heat-dissipating substrate and dissipates the heat into the air through the heat-dissipating fins.
In other embodiments, the heat sink 14 includes a planar substrate on which the power semiconductor device 12 and the ceramic-metal composite substrate may be placed and at least one fan that draws or blows air to remove heat generated by the power semiconductor device. Optionally, the heat sink 14 may further include a cooling plate including an inner chamber, the power semiconductor device 12 and the ceramic-metal composite substrate may be placed on the cooling plate, and cooling water may be pumped into the inner chamber of the cooling plate via a cooling water path inlet to absorb heat generated by the power semiconductor device.
Referring to fig. 5, fig. 5 is a flow chart of an assembly process of a power semiconductor device according to an embodiment of the present invention. As shown in fig. 5, in this embodiment, the assembly process of the power semiconductor device specifically includes the following steps:
s11, welding the power semiconductor device 12 and the ceramic metal composite substrate to form a semiconductor welding device;
in this embodiment, a solder layer is filled between the bottom copper frame of the power semiconductor device 12 and the first metal layer 15 of the ceramic-metal composite substrate, and then the power semiconductor device 12 and the ceramic-metal composite substrate are aligned by a jig. And welding the power semiconductor device and the ceramic metal composite substrate into a semiconductor welding device by adopting a reflow welding process.
S12, filling heat conductive silicone grease between the semiconductor bonding device and the heat sink 14, and fixing the semiconductor bonding device and the heat sink 14 by the screws 11.
And after the heat-conducting silicone grease is filled between the second metal layer 12 and the radiator 14, attaching the semiconductor welding device and the radiator 14, and tightly assembling the semiconductor welding device and the radiator by using screws to penetrate through the first through hole and the second through hole to obtain the power semiconductor assembly 10.
The embodiment of the invention provides a power semiconductor component, which comprises a power semiconductor device, a ceramic substrate and a radiator, wherein the power semiconductor device, the ceramic substrate and the radiator are connected through screws; wherein, both sides of the ceramic substrate are provided with metal layers. The arrangement of the metal layers on the two sides can ensure that the ceramic substrate is not easy to crack under the condition of a thin thickness. Therefore, the thermal resistance of the ceramic substrate can be reduced by reducing the thickness of the ceramic substrate, so that the heat dissipation efficiency of the power semiconductor device is improved. The thickness of the ceramic substrate is generally more than 0.6mm in the traditional design and the ceramic substrate is easy to break when the screw is locked, the ceramic metal composite substrate is used for replacing the traditional ceramic substrate, so that the thickness of the ceramic substrate can be reduced by a half, the integral strength is greatly improved, the ceramic is not easy to break when the screw is locked, and meanwhile, the thermal resistance of the ceramic substrate is further reduced due to the reduction of the thickness of the ceramic layer.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; within the idea of the invention, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. A power semiconductor assembly, characterized in that the power semiconductor assembly comprises a screw and a semiconductor solder device and a heat sink connected by the screw; wherein the content of the first and second substances,
the semiconductor welding device comprises a power semiconductor device and a ceramic metal composite substrate welded with the power semiconductor device;
the ceramic-metal composite substrate comprises a ceramic substrate, and a first metal layer and a second metal layer which are respectively arranged on the surfaces of the two sides of the ceramic substrate;
the first metal layer is located between the power semiconductor device and the ceramic substrate, and the second metal layer is located between the ceramic substrate and the radiator.
2. The power semiconductor assembly of claim 1, wherein a thermally conductive silicone layer is disposed between the second metal layer and the heat sink.
3. The power semiconductor assembly of claim 1, wherein a solder layer is disposed between the power semiconductor device and the first metal layer;
the power semiconductor device is welded with the first metal layer through the welding layer.
4. The power semiconductor assembly of claim 3, wherein the solder layer comprises a printed solder paste layer or a pre-formed solder pad layer.
5. The power semiconductor assembly according to any one of claims 1 to 4, wherein edges of the first and second metal layers are located inside edges of the ceramic substrate.
6. The power semiconductor assembly of claim 5, wherein the first and second metal layers are copper layers.
7. The power semiconductor assembly according to claim 5, wherein a first through hole is formed in the power semiconductor device, a second through hole is formed in the ceramic-metal composite substrate, and the screw is connected to the heat sink sequentially through the first through hole and the second through hole.
8. The power semiconductor assembly of claim 7, wherein the second via comprises a third via, a fourth via, and a fifth via; wherein the content of the first and second substances,
the third through hole is formed in the first metal layer, the fourth through hole is formed in the ceramic substrate, the fifth through hole is formed in the second metal layer, and the aperture of the fourth through hole is smaller than that of the third through hole and that of the fifth through hole.
9. The power semiconductor assembly of claim 8, wherein the ceramic substrate has a thickness of 0.1mm to 1.0mm, and the first and second metal layers each have a thickness of 0.1mm to 1.0 mm.
10. The power semiconductor assembly of claim 9, wherein the ceramic metal composite substrate has a thickness of less than or equal to 2.0 mm.
CN202010213572.3A 2020-03-24 2020-03-24 Power semiconductor assembly Pending CN111312672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010213572.3A CN111312672A (en) 2020-03-24 2020-03-24 Power semiconductor assembly

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010213572.3A CN111312672A (en) 2020-03-24 2020-03-24 Power semiconductor assembly

Publications (1)

Publication Number Publication Date
CN111312672A true CN111312672A (en) 2020-06-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010213572.3A Pending CN111312672A (en) 2020-03-24 2020-03-24 Power semiconductor assembly

Country Status (1)

Country Link
CN (1) CN111312672A (en)

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