CN1112711C - 软磁材料制成的元件的磁场热处理工艺 - Google Patents

软磁材料制成的元件的磁场热处理工艺 Download PDF

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CN1112711C
CN1112711C CN98109635A CN98109635A CN1112711C CN 1112711 C CN1112711 C CN 1112711C CN 98109635 A CN98109635 A CN 98109635A CN 98109635 A CN98109635 A CN 98109635A CN 1112711 C CN1112711 C CN 1112711C
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G·考德乔恩
P·沃林
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Abstract

一种低各向异性软磁材料制成的磁性元件的磁场热处理工艺，所述软磁材料例如是15/80/5 FeNiMo合金、Co基非晶合金或者纳米晶FeSiCuNbB合金，其中在低于磁性材料居里点的温度对磁性元件进行退火，在退火过程中，对磁性元件施加AC或DC的、单一纵向或单一横向的磁场，其中，以接连的脉冲方式施加磁场，每个脉冲包括其间磁场强度达到最大值的第一部分和其间磁场强度为最小值的第二部分。

Description

软磁材料制成的元件的磁场热处理工艺
发明领域
本发明涉及磁性元件的磁场处理工艺，该磁性元件例如是用于剩余电流器件的磁心，由软磁合金例如15/80/5FeNiMo合金、Co基非晶合金或者纳米晶FeSiCuNbB合金构成。
背景技术
在电工技术、例如测量变压器或者电源变压器的应用中，使用的磁心是由针对其磁性能例如导磁率或损耗所选择的磁性材料构成的。对于这些应用，磁滞回线的形状不是主要的。另一方面，对于处理小振幅电信号的许多应用来说，例如剩余电流器件、用于连接至数字电话网络的开关电源或开关变压器，磁滞回线的形状是头等重要的。特别是，磁滞回线的形状特征体现在Br/Bm比值，即剩余磁感与最大磁感的比值。当Br/Bm大于约0.9时，磁滞回线被称为“矩形”。当Br/Bm比值小于约0.5时，磁滞回线被称为“扁平”。具有矩形磁滞回线的材料用来例如制造磁放大器的磁心或者开关电源的控制级的磁心。具有扁平磁滞回线的材料具体用于剩余电流器件的磁心、电滤波器或者DC隔离变压器。
为了采用具有矩形或扁平的精确的磁滞回线形状的软磁材料制造磁性元件，使用具有低各向异性(各向异性常数小于5000ergs/cm3，最好小于1000ergs/cm3)的软磁合金，例如15/80/5FeNiMo合金、Co基非晶合金或者纳米晶FeSiCuNbB合金，而且在强磁场中对磁性元件退火。在低于合金的居里点的温度进行退火。当期望获得矩形磁滞回线时，磁场是纵向的、即平行于磁性能测量方向。当期望获得扁平磁滞回线时，磁场是横向的、即垂直于磁性能测量方向。在整个处理过程中均施加磁场，并且是恒定的。处理的温度和时间是对热处理结果有影响的两个参数。当具有较长时间(从1小时到几个小时)，这些参数能够以较高的可靠性获得相当矩形的(BrBm＞0.9)磁滞回线或者相当扁平的(Br/Bm＜0.2)的磁滞回线。但是，尚不能以足够的可靠性获得具有中间形状(0.3＜Br/Bm＜0.9)的磁滞回线，而这种磁滞回线对于某些应用是非常有用的。这是因为，为了获得这种磁滞回线，必须进行短暂的退火处理，但是从展望工业应用的角度来看，就 矩形性和导磁率这两者而言，其结果是极为随机的。这是因为必须能够同时控制这些参数。
发明内容
本发明的目的在于克服上述缺点，提供一种以可重现的方式获得由软磁合金制成的磁性元件的技术方案，所述软磁合金具有处于极矩形磁滞回线与极扁平磁滞回线之间的中间磁滞回线，亦即特征在于Br/Bm比值在0.3～0.9之间的回线。
为此目的，本发明的主题在于软磁材料制成的磁性元件的磁场热处理工艺，所述软磁材料例如是15/80/5FeNiMo合金、Co基非晶合金或者纳米晶FeSiCuNbB合金，其中在低于磁性材料居里点的温度对磁性元件进行退火，在退火过程中，以接连的脉冲方式对磁性元件施加AC或DC的纵向或横向磁场，每个接连的脉冲包括其间磁场强度达到最大值的第一部分和其间磁场强度为最小值的第二部分。该最小值最好小于对应于向磁性元件施加的最大脉冲的磁场最大值的10％。
两个接连的脉冲的最大磁场强度可以基本上相同或者基本上不同。具体地，对于任何一对的两个接连的脉冲，后一脉冲的最大磁场强度可以小于前一脉冲的最大磁场强度，以便在整个处理中降低最大磁场。最终产生的脉冲的最大磁场强度则可小于首先产生的脉冲的最大磁场强度的25％。
每个脉冲的最小磁场强度最好为零。
而且，每个脉冲的全部持续时间最好少于30分钟，磁场具有最大强度的持续时间最好少于15分钟。
附图说明
以下将参考单一附图更具体地说明本发明，该附图展示了对软磁合金制成的磁性元件的热处理中所施加的磁场和温度在整个时间过程中的变化。还将通过实施例展示本发明。
具体实施方式
根据本发明的热处理，是施加于由各向异性极低的软磁合金制成的磁性元件，该热处理由在低于软磁合金居里点的温度的磁场退火组成，其中，间断地施加磁场。该磁场热处理是在用于在单方向磁场中进行热处理的已知炉中进行的。例如，当磁性元件是由软磁合金带卷绕构成的环形磁心，以便形成矩形剖面的圆环时，利用其中通入DC或AC电流的、并且圆环在其上滑动的电导体产生磁场，或者利用其轴平行于圆环环绕轴并且围绕圆环的线圈产生磁场。在第一种情况，磁场是纵向的，亦即平行于软磁合金带的纵轴。在第二种情况，磁场是横向的，亦即平行于合金带表面，但垂直于其纵轴。
退火温度应大于表示为摄氏度的居里点0.5倍。
如图1所示，热处理包括：
在温度方面，在处理开始时刻t0与处理结束时刻t1之间，温度保持在处理温度θ，低于居里温度θc；
在磁场方面，有接连的脉冲C1、C2、C3和C4。
每个脉冲具有其间磁场强度为最大值Hmax(对C1是Hmax1，对C2是Hmax2等)的第一持续部分Δt(对C1是Δt1，对C2是Δt2等)和其间磁场强度为最小值Hmin(对C1是Hmin1，对C2是Hmin2等)的第二持续部分Δt’(对C1是Δt’1，对C2是Δt’2等)。
当磁场是连续的时，Hmax代表磁场强度。当磁场是交替的时，Hmax代表磁场峰值强度(在每个交替周期达到的最大强度)。
所示脉冲是矩形的。但是，脉冲例如可以是梯形的或者三角形的，在对应于强磁场的脉冲部分的过程中磁场强度以规则形式降低。
在所示实施例中，与两个接连的脉冲C1、C2对应的磁场最大值Hmax1和Hmax2相等。但是，Hmax3小于Hmax2、大于Hmax4。事实上，接连的磁场最大值的变化可以根据需要选择。具体地，这些接连的值可以从可使圆环在处理过程中饱和的值(该值不仅取决于构成圆环的材料性质，而且还取决于圆环尺寸)开始，在整个处理中降低，以便在处理结束时达到小于初始值的25％的值。
磁场最小值Hmin通常大约为零，在所有情况中必须小于处理过程中磁场达到的最大值的10％。
通常，Δt值具有5分钟的数量级，应必须保持小于15分钟。从一个脉冲到另一个脉冲它们不必相等。持续时间Δt’通常具有5分钟的数量级，应必须保持小于30分钟。
脉冲数量可以根据需要选择，这取决于所要获得的结果，还取决于最好大于10分钟并且可能持续几小时的整个处理过程。在所有情形中脉冲数量必须大于2。
作为一种变型，某些脉冲产生于纵向磁场，其余产生于横向磁场。
在一个实施例中，采用由合金Fe73.5Si13.5Nb3Cu1B9制成的带，制造圆环形磁心，外径为26mm，内径为16mm，厚10mm。首先对这些磁心进行在530℃保持1小时的热处理，从而使其具有钠米晶结构；然后进行根据本发明的各种磁场退火处理。各种处理的不同之处在于保持温度、其间施加磁场的保持时间的比例、和磁场方向。在所有情形中，温度保持时间是1小时，并且以矩形脉冲形式施加磁场，其间最大磁场强度足以使圆环在几分钟内饱和。所获得的磁滞回线形状的特征在于Br/Bm是：
         横向磁场            纵向磁场
    温度   时间的25％   时间的95％     时间的25％   时间的95％
    250℃   0.55   0.35     0.65   0.75
    300℃   0.40   0.25     0.70   0.80
    350℃   0.25   0.15     0.80   0.85
    400℃   0.15   0.05     0.85   0.95
从此表中可见，例如在对时间的25％施加的横向磁场以及250℃的退火温度的处理中，Br/Bm比值是0.35。事实上，这些值的获得在±0.02。此外，50Hz的最大磁导率，比通过根据已有技术的连续磁场热处理获得的50Hz的最大磁导率，系统地至少大25％。
更具体地，在以脉冲形式施加的横向磁场中于400℃退火的情况，对温度保持时间的25％施加强磁场，获得0.08～0.12之间的Br/Bm比值以及180000～220000之间的50Hz的阻抗磁导率μmax。
通过对比，进行根据已有技术的磁场热处理，也就是说在温度持续过程中磁场保持恒定的条件下进行热处理。这些处理由在垂直磁场中的350℃退火组成。所获得的Br/Bm值在0.12～0.31之间，即分散比上述实施例大5倍。磁导率μmax值在180000～220000之间。

Claims (9)

1.一种低各向异性软磁材料制成的磁性元件的磁场热处理工艺，所述软磁材料是15/80/5FeNiMo合金、Co基非晶合金或者纳米晶FeSiCuNbB合金，其中在高于0.5倍磁性材料居里点至低于磁性材料居里点的温度范围内对磁性元件进行退火，在退火过程中，对磁性元件施加AC或DC的、单一纵向或单一横向的磁场，其特征在于，以接连的脉冲方式施加磁场，每个脉冲包括其间磁场强度达到最大值的第一部分和其间磁场强度为最小值的第二部分，整个热处理过程的持续时间大于10分钟，并且脉冲数量大于2。
2.根据权利要求1的工艺，其特征在于，对于至少两个接连的脉冲，最大磁场强度相同。
3.根据权利要求1的工艺，其特征在于，对于至少两个接连的脉冲，最大磁场强度不同。
4.根据权利要求3的工艺，其特征在于，后一脉冲的最大磁场强度小于前一脉冲的最大磁场强度。
5.根据权利要求4的工艺，其特征在于，对于任何一对的两个接连的脉冲，后一脉冲的最大磁场强度小于前一脉冲的最大磁场强度。
6.根据权利要求5的工艺，其特征在于，最终产生的脉冲的最大磁场强度小于首先产生的脉冲的最大磁场强度的25％。
7.根据权利要求1～6中任一项的工艺，其特征在于，对于至少一个脉冲，最大磁场强度小于处理过程中磁场所达到的最大强度的10％。
8.根据权利要求1～6中任一项的工艺，其特征在于，至少一个脉冲具有小于30分钟的整个持续时间。
9.根据权利要求8的工艺，其特征在于，对于其整个持续时间小于30分钟的一个脉冲，其间磁场具有最大强度的持续部分小于15分钟。
CN98109635A 1997-06-04 1998-06-03 软磁材料制成的元件的磁场热处理工艺 Expired - Fee Related CN1112711C (zh)

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SK67798A3 (en) 1999-01-11
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AU733279B2 (en) 2001-05-10
ES2196510T3 (es) 2003-12-16
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TW367508B (en) 1999-08-21
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PL326622A1 (en) 1998-12-07
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AU6483698A (en) 1998-12-10
DE69814983T2 (de) 2004-05-13
FR2764430A1 (fr) 1998-12-11
ZA984148B (en) 1998-11-26
DE69814983D1 (de) 2003-07-03
HU9801275D0 (en) 1998-07-28
EP0883141B1 (fr) 2003-05-28
CZ165998A3 (cs) 1999-01-13
CN1201991A (zh) 1998-12-16
ATE241849T1 (de) 2003-06-15

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