CN111261722B - Low reverse recovery charge lateral diode of integrated capacitor - Google Patents
Low reverse recovery charge lateral diode of integrated capacitor Download PDFInfo
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- CN111261722B CN111261722B CN202010072965.7A CN202010072965A CN111261722B CN 111261722 B CN111261722 B CN 111261722B CN 202010072965 A CN202010072965 A CN 202010072965A CN 111261722 B CN111261722 B CN 111261722B
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- 238000011084 recovery Methods 0.000 title claims abstract description 64
- 239000003990 capacitor Substances 0.000 title claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 210000000746 body region Anatomy 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 8
- 239000001301 oxygen Substances 0.000 claims abstract 8
- 229920005591 polysilicon Polymers 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- Semiconductor Integrated Circuits (AREA)
Abstract
A low reverse recovery charge lateral diode of an integrated capacitor comprises a P-type substrate, an oxide layer buried layer, an N-type drift region and an oxide layer, wherein a P-type body region, a first field oxygen, a second field oxygen, a third field oxygen, an N-type buffer region, a P-type light doped region and an N-type light doped region are arranged on the N-type drift region, a P-type heavy doped region serving as an anode is arranged in the P-type body region, a second N-type heavy doped region serving as a cathode is arranged in the N-type buffer region, a first N-type heavy doped region is arranged in the N-type light doped region, first polycrystalline silicon and a capacitor are arranged in the oxide layer, the first polycrystalline silicon is positioned above the P-type light doped region, the first polycrystalline silicon is separated from the P-type light doped region by the oxide layer, the capacitor is composed of first metal aluminum serving as one polar plate and second metal aluminum serving as the other polar plate, the first metal aluminum is connected with the first N-type heavy doped region, and the first polycrystalline silicon and the second metal aluminum is connected with the P-type light doped region.
Description
Technical Field
The invention mainly relates to the technical field of power semiconductor devices, in particular to a transverse fast recovery diode for reducing reverse recovery charges.
Background
The SOI technology has the advantages of high operation speed, low power consumption, low electric leakage, good process compatibility and the like, and is widely applied. The lateral diode based on the SOI technology is a very widely applied device in the field of power devices (as shown in fig. 1) because it has the advantages of large forward current, short reverse recovery time, high reverse withstand voltage, good switching characteristics, and the like. Especially in the bootstrap circuit of the half-bridge driving module, the bootstrap diode needs to adopt a fast recovery diode in order to match with the fast switching tube. However, as the switching frequency increases, the diode is frequently switched back and forth between the forward conduction state and the reverse blocking state, and each time the forward conduction state is switched to the reverse withstand voltage state, the diode needs to undergo a reverse recovery process, the larger the reverse recovery charge is, the larger the power consumption of the diode is, and the smaller the on-resistance of the switching tube is, the lower the power consumption of the switching tube is, and at the moment, the power consumption of the diode becomes the main part of the power consumption of the whole circuit. Therefore, reducing the reverse recovery charge is the key to improve the performance of the high-frequency switch circuit and reduce the power consumption of the whole circuit. Meanwhile, the peak current generated by the reverse recovery of the diode can also damage other devices in the circuit, and the reliability and the safety of the electronic circuit are seriously influenced.
Generally, in order to reduce reverse recovery charge, a minority carrier lifetime control technology is adopted, such as heavy metal elements of Au, pt and the like are diffused, and a recombination center is introduced into a diode body; or by introducing defects into the diode body by adopting an electron and proton irradiation technology. However, the fast recovery diode realized by adopting the processes of diffusion, defect and the like has very large leakage current at high temperature, and the risk of working effect of the system is greatly increased. The introduction of recombination centers also causes an increase in forward conduction voltage drop. On the other hand, by adopting a structure of fusing a Schottky diode and a common PiN diode (targeted p-i-n/Schottky, MPS), although a better reverse recovery characteristic can be obtained and a reverse recovery charge is reduced, the structure has poor voltage resistance, and also brings about a serious electromagnetic interference problem and increases the complexity of the process.
In addition, many existing technologies have the problems of complex structure, incompatible processes, high production cost and the like, and are difficult to manufacture. Therefore, a fast recovery diode with low reverse recovery peak current and low reverse recovery charge, which is compatible in process, easy to manufacture and low in cost, is urgently needed to be researched.
Disclosure of Invention
The invention aims at the problems and provides a low reverse recovery charge lateral diode of an integrated capacitor for improving the performance of a high-frequency switch circuit by reducing the reverse recovery charge.
The technical scheme of the invention is as follows:
a lateral diode of low reverse recovery charge of an integrated capacitor comprises a P-type substrate, wherein an oxide layer buried layer is arranged on the P-type substrate, an N-type drift region is arranged on the oxide layer buried layer, a P-type body region, a third field oxide and an N-type buffer region are arranged on the N-type drift region, a P-type heavily doped region serving as an anode is arranged in the P-type body region, a second N-type heavily doped region serving as a cathode is arranged in the N-type buffer region, the third field oxide is positioned between the P-type heavily doped region and the second N-type heavily doped region, a P-type lightly doped region and an N-type lightly doped region are arranged on the N-type drift region, the P-type lightly doped region and the N-type lightly doped region are positioned outside the P-type body region, the N-type lightly doped region is positioned between the P-type body region and the P-type lightly doped region, a first N-type heavily doped region is arranged in the N-type lightly doped region, the first polysilicon is positioned above the type light doped region, the first polysilicon is isolated from the P-type light doped region by the oxide layer, the capacitor consists of first aluminum metal serving as one polar plate and second aluminum metal serving as the other polar plate, the first aluminum metal is connected with the first N-type heavy doped region, and the first polysilicon and the second aluminum metal are connected with the P-type heavy doped region.
Compared with the prior art, the structure of the invention has the following advantages:
the invention maintains the advantages of simple driving mode, high current density, high reverse withstand voltage and the like, reduces the reverse recovery peak current of the diode during the reverse recovery period, reduces the reverse recovery time, and reduces the reverse recovery charge.
1. On the premise of ensuring the same forward conduction capability and reverse voltage resistance capability as the traditional structure, the structure can obviously reduce reverse recovery charges and accelerate the reverse recovery of the diode. During the reverse recovery period, in the traditional structure, holes in the drift region are only extracted through the anode, but during the forward conduction period, the anode is connected with high potential, the cathode is connected with low potential, partial electrons reach and are accumulated on one polar plate of the integrated capacitor, namely the first metal aluminum, from the cathode through the drift region and the first N-type heavily doped region, when the reverse recovery starts, the anode is connected with low potential, the cathode is connected with high potential, the electrons accumulated on the first metal aluminum of the polar plate of the integrated capacitor are injected into the drift region through the first N-type heavily doped region, partial holes in the drift region due to the forward conduction can be compounded, meanwhile, the other partial holes in the drift region can be extracted through the P-type heavily doped region like the traditional structure, and therefore the reverse recovery of the diode is greatly accelerated. As shown in fig. 6, when the current change rate di/dt (112A/μ s), the freewheel current value (0.38A) and other conditions are completely the same in the structure of the present invention (as shown in fig. 2) and the conventional structure (as shown in fig. 1), the reverse recovery time trr of the conventional structure is 101.8ns, and the structure of the present invention is 81.8ns; the reverse peak current Irrm of the traditional structure is 6.8A, and the structure of the invention is 3A; the reverse recovery charge Qrr of the conventional structure is 373nC, and the structure of the present invention is 149nC. Compared with the traditional structure, the structure of the invention obviously reduces the reverse recovery time, the reverse recovery peak current and the reverse recovery charge, and greatly improves the reverse recovery performance.
2. The structure of the invention maintains the same forward conduction capability and voltage withstanding level as the traditional structure. During the forward conduction period, the P-type lightly doped region and the first polysilicon are not directly connected, so that holes in the P-type lightly doped region are not injected into the drift region, and only the P-type heavily doped region directly connected with the anode injects holes into the drift region, thereby keeping the same forward conduction capability as the traditional structure. During reverse voltage withstanding, depletion layers of PN junctions formed by the N-type lightly doped region and the P-type body region and depletion layers of PN junctions formed by the N-type lightly doped region and the P-type lightly doped region are widened, so that a region below the N-type lightly doped region is clamped by the two depletion layers, the voltage withstanding characteristic of the structure is not sacrificed, and the electric leakage is not increased.
3. The structure of the invention is completely based on the current process, no additional process flow is added, the number of masks is not increased, the process is compatible, the manufacturing cost is low, the simulation is also carried out by adopting the tsuprem4 software program of the current flow sheet, and the simulation result is closer to the reality.
4. The invention has simple structure driving mode, only has anode and cathode in accordance with the traditional diode, and does not add extra electrode. In addition, the third polysilicon and the N-type heavily doped region are connected together, during reverse voltage withstanding, due to the existence of the third polysilicon, an electric field on the right side of the third field oxide is relieved, voltage withstanding of the device is improved, and meanwhile, the length of a drift region of the device can be adjusted to realize different breakdown voltage values, so that the application requirements are met.
Drawings
Fig. 1 is a view showing a structure of a conventional lateral diode.
Fig. 2 is a block diagram of the present invention.
Fig. 3 shows a schematic diagram of the reverse recovery circuit.
Fig. 4 shows a comparison of hole current paths at time T0 for the conventional structure and the inventive structure, wherein (a) the conventional structure and (b) the inventive structure.
Fig. 5 is a diagram showing the hole current path at time T1 for the inventive structure.
Fig. 6 is a graph comparing reverse recovery current waveforms of the conventional structure and the structure of the present invention.
Fig. 7 is a graph comparing the forward conduction characteristics of the conventional structure and the structure of the present invention.
Fig. 8 is a graph comparing the reverse breakdown characteristics of the conventional structure and the structure of the present invention.
Figure 9 is a process flow diagram of the inventive structure.
Detailed Description
The invention is described in detail below with reference to the accompanying drawings:
a lateral diode of low reverse recovery charge of an integrated capacitor comprises a P-type substrate 1, an oxide layer buried layer 2 arranged on the P-type substrate 1, an N-type drift region 3 arranged on the oxide layer buried layer 2, a P-type body region 11, a third field oxide 15 and an N-type buffer region 18 arranged on the N-type drift region 3, a P-type heavily doped region 12 arranged in the P-type body region 11 as an anode, a second N-type heavily doped region 17 arranged in the N-type buffer region 18 as a cathode, the third field oxide 15 arranged between the P-type heavily doped region 12 and the second N-type heavily doped region 17, a P-type lightly doped region 4 and an N-type lightly doped region 8 arranged on the N-type drift region 3, wherein the P-type lightly doped region 4 and the N-type lightly doped region 8 are arranged outside the P-type body region 11, the N-type lightly doped region 8 arranged between the P-type lightly doped region 11 and the P-type lightly doped region 4, and a first N-type heavily doped region 7 arranged in the N-type lightly doped region 8, a second field oxide 10 is arranged between the first N type heavily doped region 7 and the P type heavily doped region 12 and is positioned above the N type drift region 3, a first field oxide 6 is arranged on the N type lightly doped region 8 and the first field oxide 6 extends to the upper part of the P type lightly doped region 4, an oxide layer 19 is arranged on the P type lightly doped region 4, the first field oxide 6, the first N type heavily doped region 7, the second field oxide 10, the P type heavily doped region 12, the third field oxide 15, the second N type heavily doped region 17 and the N type buffer region 18, a first polysilicon 5 and a capacitor are arranged in the oxide layer 19, the first polysilicon 5 is positioned above the P type lightly doped region 4 and is isolated by the oxide layer between the first polysilicon 5 and the P type lightly doped region 4, the capacitor is composed of a first metal aluminum 13 as one polar plate and a second metal aluminum 14 as the other polar plate, the first metal aluminum 13 is connected with the first N type heavily doped region 7, the first polysilicon 5, the second metal aluminum 14 and the P-type heavily doped region 12 are connected. Referring to fig. 2, a plate of the capacitor, i.e. the first aluminum metal 13, is electrically connected to the cathode, i.e. the second heavily doped N-type region 17, through the first heavily doped N-type region 7, the lightly doped N-type region 8, the drift N-type region 3 and the buffer N-type region 18,
in the present embodiment, it is preferred that,
a second polysilicon 9 is arranged above the second field oxide 10, and the second metal aluminum 14 is arranged on the second polysilicon 9.
A third polysilicon 16 is arranged at the right end above the third field oxide 15, and the third polysilicon 16 is connected with a second N-type heavily doped region 17.
The distance d2 between the first metallic aluminum 13 and the second metallic aluminum 14 is 0.4 μm to 0.7 μm.
The distance d1 between the P-type lightly doped region 4 and the first polysilicon 5 is 0.1-0.3 μm, and the transverse (i.e. the direction from the P-type heavily doped region 12 to the second N-type heavily doped region 17) dimension L1 of the first polysilicon 5 is 3-4 μm.
The third polysilicon 16 has a lateral L2 dimension of 1 μm to 4 μm.
The working principle of the structure of the invention is as follows:
forward conduction: the anode is connected with a high potential, the cathode is connected with a low potential, holes only flow from the P-type heavily doped region 12 to the cathode through the N-type drift region 3 and the N-type heavily doped region 17 because the N-type lightly doped region 8 and the P-type lightly doped region 4 are not directly connected with the anode, electrons flow from the cathode to the anode through the N-type drift region 3 and the P-type heavily doped region 12, and the device works in a forward conduction state, so that the forward conduction characteristic of the device is almost consistent with that of the traditional structure, as shown in figure 7.
Reverse withstand voltage: because the cathode is connected with a high potential, the N-type lightly doped region 8 is connected with the N-type heavily doped region 17 through the drift region 3, the N-type lightly doped region 8 is connected to the cathode through a resistor, the potential of the N-type lightly doped region 8 is raised, the P-type heavily doped region 10 is connected with a low potential, and the first polysilicon 5 above the P-type lightly doped region 4 is also connected with the low potential, the depletion layer of the PN junction formed by the N-type lightly doped region 8 and the P-type body region 11 can be widened, and the depletion layer of the PN junction formed by the N-type lightly doped region 8 and the P-type lightly doped region 4 can be widened. When the region below the N-type lightly doped region 8 is pinched off by the depletion layer, the structure of the invention is continuously widened like the traditional structure, and the device works in a reverse voltage-resistant state. With the pinch-off as described above, the reverse breakdown characteristics of the device are almost the same as those of the conventional structure, and the leakage does not increase, as shown in fig. 8. In addition, the third polysilicon 16 on the third field oxide 15 is connected with the cathode, so that a peak electric field generated on the right side of the field oxide can be relieved, and the voltage resistance of the device is improved.
And (3) reverse recovery: in the reverse recovery test circuit shown in FIG. 3, a double pulse signal of high level 15V and low level 0V is applied to the gate terminal, and the cathode V of the diode BUS =100V, inductance L =1.2mH. When the gate is high, the down tube channel is turned on, current flows through the inductor and the down tube to ground, the inductor is charged, and the diode is in a reverse voltage-resistant state. When the grid end is changed from high potential to low potential, the lower tube is turned off, and because the current of the inductor can not change suddenly, the current in the inductor can only flow current through the diode, and the anode potential of the diode is raised and enters a forward conduction state. When the grid end is changed from low potential to high potential again, the lower tube is started, the anode of the diode is pulled to 0, the diode is changed from forward conduction to reverse turn-off state, the diode undergoes a reverse recovery process, after the reverse recovery is finished, the diode is in a reverse voltage-resistant state, and the circuit passes through a voltage V BUS The inductor continues to be charged.
During diode reverse recovery, excess carriers in the drift region begin to be extracted, with electrons being extracted back to the cathode via the second heavily N-doped region 17 and holes being extracted back to the anode via the heavily P-doped region 12. At time T0 (beginning of reverse recovery, as shown in fig. 6), holes in the conventional structure can only be extracted from the anode through the heavily P-doped region 12 under the anode, while in the structure of the present invention, as shown in fig. 3, when the inductor freewheels through the diode, the diode is turned on in the forward direction, electrons pass from the cathode through the drift region 3 to the heavily P-doped region 12, and at the same time, some electrons pass from the cathode through the drift region 3, and the heavily N-doped region 7 reaches and accumulates on the first metal aluminum 13 in one plate of the capacitor, which is equivalent to charging the capacitor formed by the first metal aluminum 13, the second metal aluminum 14 and the oxide layer therebetween. When the diode is changed from forward conduction to reverse withstand voltage, the anode is pulled to low potential from high potential, and the second N-type heavily doped region 17 connected with the cathode is at high potential at this time, holes in the drift region can be extracted by the anode through the P-type heavily doped region 12 like the traditional structure, meanwhile, electrons accumulated on the first metal aluminum 13 of one plate of the capacitor during forward conduction can be injected into the drift region from the first N-type heavily doped region 7 and flow into the cathode, as shown in fig. 4 (b), and in the process, the holes in the drift region are recombined by the electrons, so that the service life of minority carriers, namely the holes in the drift region is shortened, and reverse recovery is accelerated. When the depletion layer below the N-type lightly doped region 8 is pinched off, the first N-type heavily doped region 7 will not inject electrons into the drift region any more, holes are extracted by the anode via the P-type heavily doped region 12, and electrons are extracted by the cathode via the second N-type heavily doped region 17, the structure of the present invention will complete the reverse recovery process as in the conventional structure, as shown in fig. 5, and the time T1 is the time when the reverse recovery of the structure of the present invention will be completed (as marked in fig. 6). In addition, the quantity of electrons injected into the drift region from the first N-type heavily doped region 7 during reverse recovery is well controlled by pinch-off of the two depletion layers, so that the purpose of improving reverse recovery characteristics is achieved, and meanwhile, the effects of improving the withstand voltage of a device and reducing electric leakage are achieved.
In the reverse recovery circuit, as shown in FIG. 3, when V BUS =100V, inductance L =1.2e-3, gate resistance R G =100 Ω, as shown in fig. 6, the structure of the present invention has a current change rate di/dt (112A/μ s) and a freewheel current value I F (0.34A) and the like are completely the same as those of the traditional structure, the reverse recovery time trr of the traditional structure is 101.8ns, and the structure of the invention is 81.8ns. The reverse peak current Irrm of the traditional structure is 6.8A, the structure of the invention is 3A, the reverse recovery charge Qrr of the traditional structure is 373nC, and the structure of the invention is 149nC. Compared with the traditional structure, the reverse recovery time, the reverse recovery peak current and the reverse recovery charge of the structure are respectively reduced by 19.6 percent, 55.8 percent and 60 percent, and the reverse recovery time, the reverse recovery peak current and the reverse recovery charge are all obviously reduced.
Claims (6)
1. The transverse diode comprises a P-type substrate (1), an oxide layer buried layer (2) is arranged on the P-type substrate (1), an N-type drift region (3) is arranged on the oxide layer buried layer (2), a P-type body region (11), a third field oxygen (15) and an N-type buffer region (18) are arranged on the N-type drift region (3), a P-type heavily doped region (12) serving as an anode is arranged in the P-type body region (11), a second N-type heavily doped region (17) serving as a cathode is arranged in the N-type buffer region (18), the third field oxygen (15) is arranged between the P-type heavily doped region (12) and the second N-type heavily doped region (17), the transverse diode is characterized in that a P-type lightly doped region (4) and an N-type lightly doped region (8) are arranged on the N-type drift region (3), the P-type lightly doped region (4) and the N-type lightly doped region (8) are arranged on the outer side of the P-type body region (11), the N-type lightly doped region (8) is arranged between the P-type lightly doped region (11) and the N-type heavily doped region (7), a first field oxygen (8) is arranged above the first field oxygen (6), and a first field oxygen (7) is arranged above the N-type drift region (6) The silicon-based capacitor structure comprises a P-type lightly doped region (4), an oxide layer (19) is arranged on the P-type lightly doped region (4), a first field oxide (6), a first N-type heavily doped region (7), a second field oxide (10), a P-type heavily doped region (12), a third field oxide (15), a second N-type heavily doped region (17) and an N-type buffer region (18), a first polycrystalline silicon (5) and a capacitor are arranged in the oxide layer (19), the first polycrystalline silicon (5) is arranged above the P-type lightly doped region (4), the first polycrystalline silicon (5) is isolated from the P-type lightly doped region (4) through the oxide layer, the capacitor is composed of a first metal aluminum (13) serving as one polar plate and a second metal aluminum (14) serving as the other polar plate, the first metal aluminum (13) is connected with the first N-type heavily doped region (7), the first polycrystalline silicon (5), and the second metal aluminum (14) are connected with the P-type heavily doped region (12).
2. A low reverse recovery charge lateral diode of an integrated capacitor according to claim 1, characterized in that a second polysilicon (9) is provided above the second field oxide (10), said second aluminum metal (14) being provided on the second polysilicon (9).
3. A low reverse recovery charge lateral diode of an integrated capacitor according to claim 1, characterized in that a third polysilicon (16) is provided at the right end above the third field oxide (15) and the third polysilicon (16) is connected to the second heavily doped N-type region (17).
4. A lateral diode of low reverse recovery charge of an integrated capacitor according to claim 1, characterized in that the distance d2 between the first metallic aluminum (13) and the second metallic aluminum (14) is 0.4 μm to 0.7 μm.
5. A lateral diode with low reverse recovery charge for an integrated capacitor as claimed in claim 1, characterized in that the distance d1 between the P-type lightly doped region (4) and the first polysilicon (5) is 0.1 μm to 0.3 μm, and the lateral dimension L1 of the first polysilicon (5) is 3 μm to 4 μm.
6. A lateral diode of low reverse recovery charge for an integrated capacitor as claimed in claim 1, characterized in that the third polysilicon (16) has a lateral dimension L2 of between 1 μm and 4 μm.
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| CN106252400B (en) * | 2016-09-20 | 2019-06-18 | 东南大学 | A kind of improvement method of thick film SOI-LIGBT device and its latch-up immunity |
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