CN111180406A - 一种合金钯涂镀键合材料 - Google Patents

一种合金钯涂镀键合材料 Download PDF

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CN111180406A
CN111180406A CN202010007214.7A CN202010007214A CN111180406A CN 111180406 A CN111180406 A CN 111180406A CN 202010007214 A CN202010007214 A CN 202010007214A CN 111180406 A CN111180406 A CN 111180406A
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palladium
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田鹏
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Shenzhen Kingstar Application Materials Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/05198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/05199Material of the matrix
    • H01L2224/052Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05263Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05264Palladium [Pd] as principal constituent

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Abstract

一种合金钯涂镀键合材料,包括主芯材,以及在主芯材上镀覆形成的钯层,主芯材添加改善延伸性能的微量金属,主芯材经过单晶熔炼拉伸成合金芯线并在表面镀钯后再超细拉伸为键合丝,所述改善延伸性能的微量金属及其与主芯材的重量百万分比(parts per million,缩略词为ppm)分别如下:钙:1~3ppm;镁:1~2ppm;锌:2~3ppm;锡:0.5~1.5ppm。与现有技术相比,本发明的有益效果是:本发明提供的合金钯涂镀键合材料具备易制备,成本低,理化性能优越,此外,还具备较好的延展性,在压力加工过程中有效保证镀层的完整性,在后续的超细拉伸过程中不必进行中间退火就具有较好的最终塑性变形能力,值得推广。

Description

一种合金钯涂镀键合材料
技术领域
本发明涉及一种键合材料,具体是一种合金钯涂镀键合材料。
背景技术
键合将两片表面清洁、原子级平整的同质或异质半导体材料经表面清洗和活化处理,在一定条件下直接结合,通过范德华力、分子力甚至原子力使晶片键合成为一体的技术。
中国专利CN100359657C公告了一种《键合线和使用该键合线的集成电路装置》,这种键合线包含铜作为主要材料的芯材,在所述芯材上形成的包含除铜之外金属的异种金属层和一覆层,所述覆层包含具有熔点高于铜的熔点的抗氧化金属并且在所述异种金属层上形成。所述键合线可以形成在球直径的宽范围上具有真正圆形的球,并且可以使用镀敷技术制造而不会使镀液劣化,且所述覆层到所述芯材的粘合性良好。
但是,在后续的压力加工过程中不能保证镀层的完整性,延展性能不高,综合理化性能并不优越。
发明内容
本发明的目的在于提供一种合金钯涂镀键合材料,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:
一种合金钯涂镀键合材料,包括主芯材,以及在主芯材上镀覆形成的钯层,主芯材添加改善延伸性能的微量金属,主芯材经过单晶熔炼拉伸成合金芯线并在表面镀钯后再超细拉伸为键合丝,所述改善延伸性能的微量金属及其与主芯材的重量百万分比(parts permillion,缩略词为ppm)分别如下:钙:1~3ppm;镁:1~2ppm;锌:2~3ppm;锡:0.5~1.5ppm。
作为本发明进一步的方案:所述主芯材为铜丝或铝丝。
作为本发明再进一步的方案:所述主芯材铜丝/铝丝的纯度不低于99.999%。
作为本发明再进一步的方案:所述镀覆形成的钯层,是在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的钯层。
作为本发明再进一步的方案:所述真空镀膜设备的真空度不高于8Pa。
作为本发明再进一步的方案:所述主芯材的直径为0.25-0.5mm。
作为本发明再进一步的方案:所述镀覆形成的钯层厚度为0.2~2.5μm。
作为本发明再进一步的方案:所述改善延伸性能的微量金属及其与主芯材的重量百万分比分别如下:钙:2ppm;镁:1.5ppm;锌:2.5ppm;锡:2ppm。
与现有技术相比,本发明的有益效果是:本发明提供的合金钯涂镀键合材料具备易制备,成本低,理化性能优越,此外,还具备较好的延展性,在压力加工过程中有效保证镀层的完整性,在后续的超细拉伸过程中不必进行中间退火就具有较好的最终塑性变形能力,值得推广。
具体实施方式
下面,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1:
一种合金钯涂镀键合材料,包括主芯材,以及在主芯材上镀覆形成的钯层,主芯材添加改善延伸性能的微量金属,主芯材经过单晶熔炼拉伸成合金芯线并在表面镀钯后再超细拉伸为键合丝,所述改善延伸性能的微量金属及其与主芯材的重量百万分比(parts permillion,缩略词为ppm)分别如下:钙:1ppm;镁:1ppm;锌:2ppm;锡:0.5ppm。
所述主芯材为铜丝或铝丝。
所述主芯材铜丝/铝丝的纯度不低于99.999%。
所述镀覆形成的钯层,是在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的钯层。
所述真空镀膜设备的真空度不高于8Pa。
所述主芯材的直径为0.25-0.5mm。
所述镀覆形成的钯层厚度为0.2~2.5μm。
实施例2:
一种合金钯涂镀键合材料,包括主芯材,以及在主芯材上镀覆形成的钯层,主芯材添加改善延伸性能的微量金属,主芯材经过单晶熔炼拉伸成合金芯线并在表面镀钯后再超细拉伸为键合丝,所述改善延伸性能的微量金属及其与主芯材的重量百万分比(parts permillion,缩略词为ppm)分别如下钙:2ppm;镁:1.5ppm;锌:2.5ppm;锡:2ppm。
所述主芯材为铜丝或铝丝。
所述主芯材铜丝/铝丝的纯度不低于99.999%。
所述镀覆形成的钯层,是在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的钯层。
所述真空镀膜设备的真空度不高于8Pa。
所述主芯材的直径为0.25-0.5mm。
所述镀覆形成的钯层厚度为0.2~2.5μm。
实施例3:
一种合金钯涂镀键合材料,包括主芯材,以及在主芯材上镀覆形成的钯层,主芯材添加改善延伸性能的微量金属,主芯材经过单晶熔炼拉伸成合金芯线并在表面镀钯后再超细拉伸为键合丝,所述改善延伸性能的微量金属及其与主芯材的重量百万分比(parts permillion,缩略词为ppm)分别如下钙:3ppm;镁:2ppm;锌:3ppm;锡:1.5ppm。
所述主芯材为铜丝或铝丝。
所述主芯材铜丝/铝丝的纯度不低于99.999%。
所述镀覆形成的钯层,是在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的钯层。
所述真空镀膜设备的真空度不高于8Pa。
所述主芯材的直径为0.25-0.5mm。
所述镀覆形成的钯层厚度为0.2~2.5μm。
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。
此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。

Claims (8)

1.一种合金钯涂镀键合材料,包括主芯材,以及在主芯材上镀覆形成的钯层,主芯材添加改善延伸性能的微量金属,主芯材经过单晶熔炼拉伸成合金芯线并在表面镀钯后再超细拉伸为键合丝,其特征在于:所述改善延伸性能的微量金属及其与主芯材的重量百万分比(parts per million,缩略词为ppm)分别如下:
钙:1~3ppm;镁:1~2ppm;锌:2~3ppm;锡:0.5~1.5ppm。
2.根据权利要求1所述的合金钯涂镀键合材料,其特征在于,所述主芯材为铜丝或铝丝。
3.根据权利要求2所述的合金钯涂镀键合材料,其特征在于,所述主芯材铜丝/铝丝的纯度不低于99.999%。
4.根据权利要求1-3任一所述的合金钯涂镀键合材料,其特征在于,所述镀覆形成的钯层,是在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的钯层。
5.根据权利要求4所述的合金钯涂镀键合材料,其特征在于,所述真空镀膜设备的真空度不高于8Pa。
6.根据权利要求1所述的合金钯涂镀键合材料,其特征在于,所述主芯材的直径为0.25-0.5mm。
7.根据权利要求1所述的合金钯涂镀键合材料,其特征在于,所述镀覆形成的钯层厚度为0.2~2.5μm。
8.根据权利要求1所述的合金钯涂镀键合材料,其特征在于,所述改善延伸性能的微量金属及其与主芯材的重量百万分比分别如下:钙:2ppm;镁:1.5ppm;锌:2.5ppm;锡:2ppm。
CN202010007214.7A 2020-01-04 2020-01-04 一种合金钯涂镀键合材料 Pending CN111180406A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111945082A (zh) * 2020-07-20 2020-11-17 山东赢耐鑫电子科技有限公司 一种铜基钯涂层复合键合材料

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101496115A (zh) * 2006-07-28 2009-07-29 帝斯曼知识产权资产管理有限公司 绝缘导线及其在电子设备中的用途
JP2010245390A (ja) * 2009-04-08 2010-10-28 Tatsuta Electric Wire & Cable Co Ltd ボンディングワイヤ
CN102130067A (zh) * 2010-12-31 2011-07-20 四川威纳尔特种电子材料有限公司 一种表面镀钯键合铜丝

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101496115A (zh) * 2006-07-28 2009-07-29 帝斯曼知识产权资产管理有限公司 绝缘导线及其在电子设备中的用途
JP2010245390A (ja) * 2009-04-08 2010-10-28 Tatsuta Electric Wire & Cable Co Ltd ボンディングワイヤ
CN102130067A (zh) * 2010-12-31 2011-07-20 四川威纳尔特种电子材料有限公司 一种表面镀钯键合铜丝

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111945082A (zh) * 2020-07-20 2020-11-17 山东赢耐鑫电子科技有限公司 一种铜基钯涂层复合键合材料

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Application publication date: 20200519