CN111180371A - Atomic deposition storage frame and atomic deposition equipment - Google Patents

Atomic deposition storage frame and atomic deposition equipment Download PDF

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Publication number
CN111180371A
CN111180371A CN202010116405.7A CN202010116405A CN111180371A CN 111180371 A CN111180371 A CN 111180371A CN 202010116405 A CN202010116405 A CN 202010116405A CN 111180371 A CN111180371 A CN 111180371A
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CN
China
Prior art keywords
object placing
atomic deposition
shelving
frame
table top
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Pending
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CN202010116405.7A
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Chinese (zh)
Inventor
侯新倾
刘权辉
周超
吴克恒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
Original Assignee
Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
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Application filed by Zhejiang Jinko Solar Co Ltd, Jinko Solar Co Ltd filed Critical Zhejiang Jinko Solar Co Ltd
Priority to CN202010116405.7A priority Critical patent/CN111180371A/en
Publication of CN111180371A publication Critical patent/CN111180371A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses an atomic deposition storage frame, which comprises a storage unit, wherein the storage unit comprises a plurality of storage table tops; the plurality of object placing table tops are nested in the object placing units, and the object placing table top with a smaller size is lower than the object placing table top with a larger size; the minimum thing mesa bottom of putting includes the negative pressure cavity, the negative pressure cavity includes a plurality of gas release holes. The silicon wafers to be deposited in different sizes can be fixed by the appropriate object placing table top, the effect that the same atomic deposition object placing frame can provide the silicon wafers to be deposited in various specifications is achieved, the production cost is greatly reduced, and due to the fact that the atomic deposition object placing frame does not need to be replaced with a new atomic deposition object placing frame after the silicon wafers to be deposited in different sizes are replaced like the prior art, the corresponding saturation process and blue film detection do not need to be carried out again, the process flow is simplified, and the production efficiency is improved. The invention also provides an atom deposition device with the beneficial effect.

Description

Atomic deposition storage frame and atomic deposition equipment
Technical Field
The invention relates to the field of new material processing equipment, in particular to an atom deposition storage frame and atom deposition equipment.
Background
In the production of crystalline silicon solar cells, an aluminum oxide passivation technology is the most central passivation technology in the photovoltaic solar cell industry, wherein an atomic deposition aluminum oxide film mode is one of the most main modes for preparing an aluminum oxide film layer. When the atomic deposition method is used for preparing the deposited alumina, a silicon wafer is required to be placed on a special support plate, and the support plate is called as an object placing frame. The storage frame used at present is high in cost, and only can be used for single-specification silicon chips. Therefore, after the silicon wafers with other sizes are replaced on the production line for production, the object placing frames with corresponding specifications and sizes need to be replaced, and the corresponding saturation process and the blue film detection process need to be carried out. And the replacement of the object placing frame and the saturation treatment of the object placing frame can increase the workload of the staff and influence the starting efficiency of the equipment at the same time. In addition, after the new size of the storage frame is replaced, the old size of the storage frame can only be discarded, so that the cost for purchasing spare parts in a workshop is increased, and the input cost of a production line is increased.
Therefore, the problem that how to solve the problem that the same storage frame in the prior art can only correspond to the production of silicon wafers with a single size, so that the production efficiency is reduced and the production cost is high when the size of the produced silicon wafers is changed, is urgently needed to be solved by the technical staff in the field.
Disclosure of Invention
The invention aims to provide an atomic deposition storage frame and atomic deposition equipment, which are used for solving the problems that in the prior art, the same storage frame can only be produced corresponding to a silicon wafer with a single size, so that the production efficiency is reduced and the production cost is high when the size of the produced silicon wafer is changed.
In order to solve the technical problem, the invention provides an atomic deposition storage frame, which comprises a storage unit, a storage unit and a plurality of storage platforms, wherein the storage unit comprises a plurality of storage platforms;
the plurality of object placing table tops are nested in the object placing units, and the object placing table top with a smaller size is lower than the object placing table top with a larger size;
the minimum thing mesa bottom of putting includes the negative pressure cavity, the negative pressure cavity includes a plurality of gas release holes.
Optionally, in the atomic deposition frame, the atomic deposition frame includes a plurality of the placement units;
the object placing unit matrixes are distributed on the same plane.
Optionally, in the atomic deposition shelf frame, the shelf surface is a rectangular shelf surface.
Optionally, in the atomic deposition shelf frame, the rectangular shelf table is a right-angled rectangular shelf table.
Optionally, in the atomic deposition storage frame, an opening of the negative pressure cavity on the storage table top with the smallest size is a rectangular opening.
Optionally, in the atomic deposition frame, the rectangular opening is a chamfered rectangular opening.
Optionally, in the atomic deposition shelf, a diameter of the air bleed hole ranges from 0.2 mm to 6 mm, inclusive.
Optionally, in the atomic deposition shelving frame, each of the shelving units comprises 2 shelving surfaces.
Optionally, in the atomic deposition frame, the atomic deposition frame is a graphite frame.
An atomic deposition apparatus comprising an atomic deposition basket as described in any of the above.
The atomic deposition storage frame provided by the invention comprises a storage unit, wherein the storage unit comprises a plurality of storage table tops; the plurality of object placing table tops are nested in the object placing units, and the object placing table top with a smaller size is lower than the object placing table top with a larger size; the minimum thing mesa bottom of putting includes the negative pressure cavity, the negative pressure cavity includes a plurality of gas release holes. The invention sets a plurality of step-shaped distributed object placing platforms on the object placing units which are in one-to-one correspondence with the silicon wafers to be deposited, so that the silicon wafers to be deposited with different sizes can be fixed by the appropriate object placing platforms, and the effect that the same atomic deposition object placing frame can provide the silicon wafers to be deposited with various specifications is realized. The invention also provides an atom deposition device with the beneficial effect.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic view of a placement unit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an atomic deposition shelf according to another embodiment of the present invention;
fig. 3 is a schematic structural diagram of a placement unit according to still another embodiment of the atomic deposition placement frame provided in the present invention.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the present invention is to provide an atomic deposition shelf, a schematic structural diagram of one embodiment of which is shown in fig. 1, and is referred to as a first embodiment, and the atomic deposition shelf comprises a shelf unit, wherein the shelf unit comprises a plurality of shelf surfaces 101;
the plurality of object placing table tops 101 are embedded in the object placing units, and the position of the object placing table top 101 with a smaller size is lower than that of the object placing table top 101 with a larger size;
the bottom of the table top 101 with the smallest size comprises a negative pressure cavity 200, and the negative pressure cavity 200 comprises a plurality of air vents 210.
In addition, the object placing table top 101 is a rectangular object placing table top 101, and the length-width ratio of the rectangular object placing table top is matched with the silicon wafer to be deposited, so that the silicon wafer to be deposited can be better fixed; further, the rectangular table 101 is a rectangular table 101.
The diameter of the bleed holes 210 ranges from 0.2 mm to 6 mm, inclusive, such as any of 0.20 mm, 3.25 mm, or 6.00 mm; furthermore, the air vents 210 are distributed at the bottom of the negative pressure chamber 200 in a central symmetry manner.
As a preferred scheme, each of the object placing units comprises 2 object placing platforms 101, if the number of the object placing platforms is too large, the production difficulty of the atomic deposition object placing frame is increased, meanwhile, the stability of a silicon wafer to be deposited placed on the object placing frame is reduced, and the working reliability of the atomic deposition object placing frame is reduced, and after practical verification and theoretical calculation, the 2 object placing platforms 101 are the optimal solutions of performance and reliability, and certainly, corresponding changes can be made according to actual conditions.
As a preferred scheme, the atomic deposition storage frame is a graphite storage frame, and a graphite material is high in temperature resistance, sufficient in physical strength and strong in stability.
In fig. 1 and 3, two items 101 are illustrated as table tops of different sizes on the same storage unit.
The atomic deposition storage frame provided by the invention comprises a storage unit, wherein the storage unit comprises a plurality of storage table tops 101; the plurality of object placing table tops 101 are embedded in the object placing units, and the position of the object placing table top 101 with a smaller size is lower than that of the object placing table top 101 with a larger size; the bottom of the table top 101 with the smallest size comprises a negative pressure cavity 200, and the negative pressure cavity 200 comprises a plurality of air vents 210. The invention sets a plurality of step-shaped distributed object placing table tops 101 on the object placing units which are in one-to-one correspondence with the silicon wafers to be deposited, so that the silicon wafers to be deposited with different sizes can be fixed by the appropriate object placing table tops 101, the effect that the same atomic deposition object placing frame can provide the silicon wafers to be deposited with various specifications is realized, compared with the prior art that a plurality of sets of atomic deposition object placing frames are required to be purchased if the silicon wafers to be deposited with various sizes are produced, the production cost is greatly reduced, and because the atomic deposition object placing frames which are updated with the same time as the prior art are not required to be replaced after the silicon wafers to be deposited with different sizes are replaced, the corresponding saturation process and blue film detection are not required to be carried out again, the process flow is simplified, and the production efficiency is.
On the basis of the first specific embodiment, the arrangement of the placement units is further limited to obtain a second specific embodiment, which is shown in fig. 2, and includes a placement unit including a plurality of placement platforms 101;
the plurality of object placing table tops 101 are embedded in the object placing units, and the position of the object placing table top 101 with a smaller size is lower than that of the object placing table top 101 with a larger size;
the bottom of the least-sized storage table top 101 comprises a negative pressure cavity 200, and the negative pressure cavity 200 comprises a plurality of air vents 210;
the atomic deposition shelving frame comprises a plurality of shelving units;
the object placing unit matrixes are distributed on the same plane.
The difference between this embodiment and the above embodiment is that in this embodiment, the number and arrangement of the plurality of object placing units in the same atomic deposition object placing frame are limited, and the rest of the structure is the same as that in the above embodiment, and will not be described herein again.
The shaddock deposit is injectd in this embodiment and is put the thing frame and include a plurality of matrix arrangement in the coplanar put the thing unit, and the technical scheme that this embodiment provided can carry out the deposit to a plurality of silicon chips of treating the deposit simultaneously, has promoted production efficiency greatly, has reduced manufacturing cost.
Further, the atomic deposition shelf has a thickness in a range from 4.5 mm to 5 mm, inclusive, such as any of 4.50 mm, 4.84 mm, or 5.00 mm. It should be noted that the dashed lines in fig. 2 only represent alignment calibration lines in the vertical and horizontal dimensions, and do not represent actual structures.
On the basis of the second specific embodiment, the negative pressure chamber is further limited to obtain a third specific embodiment, a schematic structural diagram of which is shown in fig. 3, and the third specific embodiment includes an object placing unit, and the object placing unit includes a plurality of object placing table tops 101;
the plurality of object placing table tops 101 are embedded in the object placing units, and the position of the object placing table top 101 with a smaller size is lower than that of the object placing table top 101 with a larger size;
the bottom of the least-sized storage table top 101 comprises a negative pressure cavity 200, and the negative pressure cavity 200 comprises a plurality of air vents 210;
the atomic deposition shelving frame comprises a plurality of shelving units;
the object placing unit matrixes are distributed on the same plane;
the opening of the negative pressure cavity 200 on the storage table top 101 with the smallest size is a rectangular opening;
the rectangular opening is a chamfered rectangular opening.
The difference between the present embodiment and the above embodiments is that in the present embodiment, the shape of the opening of the negative pressure cavity 200 is defined, and the rest of the structure is the same as that of the above embodiments, and will not be described herein again.
In the specific embodiment, the opening of the negative pressure cavity 200 is limited to be a rectangle, further, the length-width ratio of the rectangular opening is consistent with that of the silicon wafer to be deposited, and the uniform stress of the silicon wafer to be deposited is ensured as much as possible.
The invention also provides atom deposition equipment, which comprises the atom deposition storage frame. The atomic deposition storage frame provided by the invention comprises a storage unit, wherein the storage unit comprises a plurality of storage table tops 101; the plurality of object placing table tops 101 are embedded in the object placing units, and the position of the object placing table top 101 with a smaller size is lower than that of the object placing table top 101 with a larger size; the bottom of the table top 101 with the smallest size comprises a negative pressure cavity 200, and the negative pressure cavity 200 comprises a plurality of air vents 210. The invention sets a plurality of step-shaped distributed object placing table tops 101 on the object placing units which are in one-to-one correspondence with the silicon wafers to be deposited, so that the silicon wafers to be deposited with different sizes can be fixed by the appropriate object placing table tops 101, the effect that the same atomic deposition object placing frame can provide the silicon wafers to be deposited with various specifications is realized, compared with the prior art that a plurality of sets of atomic deposition object placing frames are required to be purchased if the silicon wafers to be deposited with various sizes are produced, the production cost is greatly reduced, and because the atomic deposition object placing frames which are updated with the same time as the prior art are not required to be replaced after the silicon wafers to be deposited with different sizes are replaced, the corresponding saturation process and blue film detection are not required to be carried out again, the process flow is simplified, and the production efficiency is.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The atomic deposition frame and the atomic deposition apparatus provided by the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

Claims (10)

1. An atomic deposition storage frame is characterized by comprising a storage unit, wherein the storage unit comprises a plurality of storage table tops;
the plurality of object placing table tops are nested in the object placing units, and the object placing table top with a smaller size is lower than the object placing table top with a larger size;
the minimum thing mesa bottom of putting includes the negative pressure cavity, the negative pressure cavity includes a plurality of gas release holes.
2. The atomic deposition shelving of claim 1, wherein the atomic deposition shelving comprises a plurality of the shelving units;
the object placing unit matrixes are distributed on the same plane.
3. The atomic deposition stand of claim 2, wherein the stand is a rectangular stand.
4. The atomic deposition stand of claim 3, wherein the rectangular stand is a right-angled rectangular stand.
5. The atomic deposition shelving frame of claim 1, wherein the opening of the negative pressure chamber on the least sized shelf surface is a rectangular opening.
6. The atomic deposition shelving box of claim 5, wherein the rectangular opening is a chamfered rectangular opening.
7. The atomic deposition shelving of claim 1, wherein the diameter of the louvers ranges from 0.2 mm to 6 mm, inclusive.
8. The atomic deposition shelving frame of claim 1, wherein each shelving unit comprises 2 shelving levels.
9. The atomic deposition basket according to any one of claims 1 to 8, wherein the atomic deposition basket is a graphite basket.
10. An atomic deposition apparatus, characterized in that the atomic deposition apparatus comprises the atomic deposition basket according to any one of claims 1 to 9.
CN202010116405.7A 2020-02-25 2020-02-25 Atomic deposition storage frame and atomic deposition equipment Pending CN111180371A (en)

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CN202010116405.7A CN111180371A (en) 2020-02-25 2020-02-25 Atomic deposition storage frame and atomic deposition equipment

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CN202010116405.7A CN111180371A (en) 2020-02-25 2020-02-25 Atomic deposition storage frame and atomic deposition equipment

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111690911A (en) * 2020-06-30 2020-09-22 成都晔凡科技有限公司 Bearing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111690911A (en) * 2020-06-30 2020-09-22 成都晔凡科技有限公司 Bearing device

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