CN111106048A - Exhaust device of semiconductor front-end equipment module - Google Patents
Exhaust device of semiconductor front-end equipment module Download PDFInfo
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- CN111106048A CN111106048A CN201811250717.6A CN201811250717A CN111106048A CN 111106048 A CN111106048 A CN 111106048A CN 201811250717 A CN201811250717 A CN 201811250717A CN 111106048 A CN111106048 A CN 111106048A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
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Abstract
The invention provides an exhaust device of a semiconductor front-end equipment module, which comprises: the gas collection box is arranged below the waste gas source, an opening surface is arranged at the top of the gas collection box, the interior of the gas collection box is communicated with the waste gas source through the opening surface, and the waste gas source comprises a semiconductor front-stage equipment module; and the exhaust pipeline is arranged at the bottom or the side surface of the gas collection box, and one end of the exhaust pipeline is communicated with the inside of the gas collection box. The invention provides an exhaust device of a semiconductor front-end equipment module, which is characterized in that a gas collection box arranged below the semiconductor front-end equipment module is introduced, and waste gas is exhausted from an exhaust pipeline, so that the harm to the surrounding environment caused by toxic waste gas leakage is avoided; in addition, a vertically downward airflow is generated in the semiconductor front-end equipment module, so that particle pollution caused by eddy current in the semiconductor front-end equipment module is reduced, and the wafer yield is improved.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit manufacturing, and more particularly, to an exhaust device for a semiconductor front-end device module.
Background
Semiconductor manufacturing facilities in the field of semiconductor integrated circuit manufacturing currently use a variety of toxic chemical gases that, once leaked, can have a serious impact on the safety of surrounding personnel and property. The Front End Module (EFEM) is a semiconductor device Module for transferring a wafer, and is very easy to carry out chemical gas remaining in a chamber of the device and leak the chemical gas to the surrounding environment during the wafer transferring process. E.g. for P-type implantationThe ion implantation equipment generally uses BF3As an ion implantation source, when the wafer to be processed is processed by ion implantation and is transmitted out of the ion implantation equipment through the front-stage equipment module, the residual BF is generated in the process3The gas is easily attached to the wafer surface and then enters the front-end equipment module. These BF's having high irritativeness to human body3Once gas leaks from the front-end equipment module to the external environment, physical discomfort and even poisoning of surrounding operators can be caused, and even workshop shutdown can be caused. In addition, vortex is easily generated along with wafer transmission in the closed environment of the existing front-section equipment module, and then particles are lifted and the surface of the wafer is polluted, so that the wafer yield is low.
Therefore, it is necessary to provide a new exhaust device for a semiconductor front-end device module to solve the above-mentioned problems.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides an exhaust device for a semiconductor front-end equipment module, which is used to solve the problem of toxic exhaust gas leakage in the prior art semiconductor front-end equipment module.
To achieve the above and other related objects, the present invention provides an exhaust apparatus for a semiconductor front-end device module, comprising:
the gas collection box is arranged below an exhaust gas source, an opening surface is arranged at the top of the gas collection box, the interior of the gas collection box is communicated with the exhaust gas source through the opening surface, and the exhaust gas source comprises a semiconductor front-stage equipment module; and
and the exhaust pipeline is arranged at the bottom or the side surface of the gas collection box, and one end of the exhaust pipeline is communicated with the inside of the gas collection box.
As an alternative of the present invention, the size of the opening surface of the gas collecting box matches the size of the bottom surface of the semiconductor front-end device module, and the opening surface is overlapped with the bottom surface of the semiconductor front-end device module.
As an alternative of the present invention, the exhaust device of the semiconductor front-end device module further includes a raised floor, the raised floor is disposed between the semiconductor front-end device module and the gas collecting tank, and the raised floor has a plurality of through holes communicating an upper surface and a lower surface of the raised floor, so that the exhaust gas of the semiconductor front-end device module is collected to the gas collecting tank through the through holes.
As an alternative of the present invention, the exhaust device of the front-end semiconductor device module further includes a support and a beam supported on the support, the raised floor is supported on the beam, and the gas collecting box is installed in a supporting height of the support.
As an alternative of the invention, the surfaces of the bracket and the cross beam are formed with a layer of corrosion resistant material.
As an alternative of the present invention, the exhaust apparatus of the semiconductor front-end device module further includes a vacuum pumping module, and the vacuum pumping module is connected to an air outlet of the exhaust pipe.
As an alternative of the present invention, the exhaust apparatus of the front end semiconductor device module further includes an exhaust gas treatment module disposed in the exhaust pipe.
As an alternative of the present invention, the inner wall of the gas collecting tank and the inner wall of the exhaust line are formed with a corrosion-resistant material layer.
As an alternative of the invention, the bottom of the gas collection box is provided with an exhaust hole which is connected with one end of the exhaust pipeline; the bottom of the gas collection box is also provided with a bracket hole for the bracket to longitudinally penetrate through the gas collection box; and cross beam openings are arranged on two sides of the gas collection box, so that the cross beams transversely penetrate through the gas collection box.
As described above, the present invention provides an exhaust apparatus for a semiconductor front-end device module, which avoids the damage to the surrounding environment due to the leakage of toxic exhaust gas by introducing a gas collecting box disposed below the semiconductor front-end device module and exhausting the exhaust gas from an exhaust pipeline. In addition, a vertically downward airflow is generated in the semiconductor front-end equipment module, so that particle pollution caused by eddy current in the semiconductor front-end equipment module is reduced, and the wafer yield is improved.
Drawings
Fig. 1 is a schematic view illustrating a gas collecting box and an exhaust pipeline in an exhaust apparatus of a semiconductor front-end device module according to an embodiment of the present invention.
Fig. 2 is a side view of a gas collecting box and an exhaust duct in an exhaust apparatus of a semiconductor front-end device module according to an embodiment of the present invention.
Fig. 3 is a schematic view of an exhaust apparatus of a semiconductor front-end device module according to an embodiment of the present invention.
Fig. 4 shows a top view of a raised floor provided in a second embodiment of the present invention.
Fig. 5 is a schematic view illustrating a gas collecting box of an exhaust apparatus of a semiconductor front-end device module according to a second embodiment of the present invention, the gas collecting box being disposed between a support and a beam.
Fig. 6 is a front view of the exhaust apparatus of the semiconductor front-end device module according to the second embodiment of the present invention, wherein the gas collecting box is disposed between the support and the cross beam.
Fig. 7 is a schematic view of a gas collecting box and a gas exhausting pipeline in an exhaust apparatus of a semiconductor front-end device module according to a second embodiment of the present invention.
Fig. 8 is a schematic view illustrating an arrangement of an exhaust device of a semiconductor front-end equipment module according to a second embodiment of the present invention.
Fig. 9 is a schematic view illustrating an arrangement of an exhaust device of a semiconductor front-end equipment module according to a third embodiment of the present invention.
Description of the element reference numerals
100 semiconductor front-end equipment module
10 gas collection box
10a corrosion resistant material layer
101 exhaust pipeline
102 vacuum pumping module
103 raised floor
103a via hole
104 fixing clamp
105 waste gas treatment module
201 support
201a exhaust hole
201b support opening
202 beam
202a beam opening
203 base beam
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 9. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 1 to 3, the present invention provides an exhaust apparatus for a front-end semiconductor device module, including:
the gas collection box 10 is arranged below an exhaust gas source, an opening surface is arranged at the top of the gas collection box 10, the interior of the gas collection box is communicated with the exhaust gas source through the opening surface, and the exhaust gas source comprises a semiconductor front-end equipment module 100; and
and the exhaust pipeline 101 is arranged at the bottom or the side surface of the gas collection box 10, and one end of the exhaust pipeline 101 is communicated with the inside of the gas collection box 10.
Fig. 1 is a schematic view of the gas collecting box 10 in the exhaust device of the semiconductor front-end device module according to the present embodiment, and fig. 2 is a side view thereof. The exhaust device of the semiconductor front-end equipment module provided in the present embodiment is composed of a gas collecting box 10 and an exhaust pipeline 101. An opening surface is arranged at the top of the gas collection box 10, and the internal space of the gas collection box 10 is connected with the outside through the opening surface. The exhaust pipelines 101 are disposed at the bottom of the gas collecting box 10, and in this embodiment, two exhaust pipelines 101 are disposed to be connected with the bottom of the gas collecting box 10. Optionally, the diameter of the exhaust pipe 101 ranges from 80 mm to 120mm, for example, 100mm, but the diameter of the exhaust pipe 101 is not limited to the above range, and may be flexibly set according to an actually required exhaust effect. The exhaust pipe 101 is connected to the gas collecting box 10 through an exhaust hole 201a, and the connection structure should be sealed and secure so that the exhaust gas is not leaked into the surrounding environment. The exhaust line 101 is only schematically indicated, and its specific length can be freely selected according to practical situations. In other embodiments of the present invention, the exhaust pipes may also be disposed on the side wall of the gas collecting box, and the number of the exhaust pipes may also be one or more than two. When the gas collection box 10 is disposed below the exhaust gas source, the exhaust gas enters through the opening surface and is collected in the gas collection box 10, and is discharged through the exhaust pipeline 101, so that the exhaust gas is intensively recovered and cannot be leaked into the surrounding environment.
As shown in fig. 3, the source of the exhaust gas comprises semiconductor manufacturing equipment, and in particular, a semiconductor front end equipment module 100 comprising semiconductor manufacturing equipment. In semiconductor integrated circuit manufacturing processes, toxic chemical gases are inevitably used, and such chemical gases may cause great harm if leaked into the surrounding environment. Particularly, for the front-end semiconductor module of the semiconductor manufacturing equipment, since the front-end semiconductor module has the functions of communicating the equipment with the external environment and transferring the wafer, the chemical gas originally in the sealed environment inside the equipment is easily attached to the surface of the wafer during the process and enters the front-end semiconductor module together with the wafer. The semiconductor front-end equipment module and the external shop environment are not normally completely sealed, which may allow harmful chemical gases to diffuse into the surrounding environment and cause damage. Therefore, the exhaust device of the front-end semiconductor device module provided in this embodiment can be used for collecting the harmful chemical gas in the front-end semiconductor device module 100. Of course, in other embodiments of the present invention, the exhaust apparatus of the semiconductor front-end equipment module can also be applied to other semiconductor manufacturing equipment or other exhaust gas sources that may have a risk of chemical gas leakage.
In fig. 3, the semiconductor front-end device module 100 as an exhaust gas source is disposed above the gas collecting box 10, the size of the opening surface of the gas collecting box 10 matches the size of the bottom surface of the semiconductor front-end device module 100, and the opening surface coincides with the bottom surface of the semiconductor front-end device module 100. This allows the exhaust gas in the front-end semiconductor device module 100 to be completely collected by the header tank 10, while ensuring that the header tank 10 does not occupy additional space. In this embodiment, an opening is disposed at the bottom of the front-end semiconductor device module 100 or an open non-shielding structure is adopted, so that the exhaust gas in the front-end semiconductor device module 100 can smoothly enter the gas collecting box 10. In addition, through the gas collecting box 10 arranged below the semiconductor front-end equipment module 100, vertically downward airflow is generated in the semiconductor front-end equipment module 100, vortex is prevented from being generated in the semiconductor front-end equipment module 100, particle pollution caused by the vortex in the semiconductor front-end equipment module 100 is reduced, and the wafer yield is improved.
It should be noted that, in this embodiment, since the bottom of the semiconductor front-end device module 100 needs to be connected and attached to the gas collecting box 10, the supporting and fixing of the semiconductor front-end device module 100 itself can be realized by fixing the side surface or the top of the semiconductor front-end device module to the production equipment, or by disposing the gas collecting box 10 under the fixed floor surface, the semiconductor front-end device module 100 is supported by the gas collecting box 10, and this embodiment does not limit the supporting and fixing manner of the semiconductor front-end device module 100.
As an example, as shown in fig. 3, the exhaust apparatus of the front end of semiconductor device module further includes a vacuum pumping module 102, and the vacuum pumping module 102 is connected to an air outlet of the exhaust duct 101. The vacuum pumping module 102 may be a vacuum pump independently installed in the exhaust device of the semiconductor front-end equipment module, or may be a factory vacuum system.
As an example, as shown in fig. 3, a corrosion-resistant material layer 10a is formed on an inner wall of the gas collecting box 10 and an inner wall of the exhaust duct 101, and the corrosion-resistant material layer 10a has corrosion resistance to at least chemical gas present in the front-end semiconductor module 100, so as to prevent the gas collecting box 10 and the exhaust duct 101 from being corroded and damaged to generate secondary leakage. For example, the inner wall material may be a corrosion-resistant material such as stainless steel or a polymer coating material.
Example two
Referring to fig. 4 to 8, in this embodiment, compared with the solution in the first embodiment, the exhaust device of the semiconductor front-end device module further includes at least one raised floor 103, and the raised floor 103 is disposed between the semiconductor front-end device module 100 and the gas collecting box 10 (as shown in fig. 8).
Since the front end module 100 is used for transferring wafers between the semiconductor manufacturing equipment and the wafer carrier, in order to ensure the stability of wafer transfer, in the embodiment, the exhaust device of the front end module further includes a raised floor 103 for stably supporting the front end module 100. The semiconductor front-end equipment module 100 is disposed on the raised floor 103, and exhaust gas in the semiconductor front-end equipment module 100 is collected and enters the gas collecting box 10 located below the semiconductor front-end equipment module through gaps among a plurality of raised floors 103 or openings provided on the raised floors 103.
As an example, as shown in fig. 4, the raised floor 103 is provided with a through hole 103a that communicates the upper surface and the lower surface of the raised floor 103. In a clean room plant for semiconductor manufacturing, in order to ensure that the air cleanliness level of the plant environment is maintained at a high level, for example, 100 or even 1, the air flow in the plant is vertically unidirectional, and therefore, the floor in the plant is generally configured as a floor with through holes so that the air flows in from above to form a vertically unidirectional air flow. Fig. 4 is a plan view of the raised floor 103 provided in the present embodiment, and a plurality of through holes 103a are provided in the raised floor 103 to communicate the upper surface and the lower surface of the raised floor 103. The through hole floor is also used as the raised floor 103 of the exhaust device of the semiconductor front-end equipment module in this embodiment, so that the air flow in the semiconductor front-end equipment module 100 is vertical and unidirectional, and the generated waste gas is collected into the gas collecting box 10 through the through hole. In addition, this embodiment also has the significant advantage of being compatible with existing shop environments, allowing for a seamless interface with existing shop floor installations. In this embodiment, the bottom of the front-end semiconductor device module 100 is an open-type non-shielding structure, so that the exhaust gas in the front-end semiconductor device module 100 can enter the gas collecting box 10 through the raised floor 103.
As shown in fig. 5 to 7, the exhaust apparatus of the front-end semiconductor device module further includes a support 201 and a beam 202 supported on the support 201, the raised floor 103 is supported on the beam 202, and the gas collecting box 10 is installed in a supporting height of the support 201. Fig. 5 is a schematic view of the header box 10 disposed between the support 201 and the cross beam 202, and fig. 6 is a front view thereof. Fig. 5 is a perspective view showing the structure of the support 201 and the beam 202, and the raised floor 103 laid on the beam 202 is not shown; fig. 6 is a side view showing the support 201 and the cross beam 202, showing the raised floor 103 laid on the cross beam 202. Fig. 7 is a perspective view of the gas collecting box 10 provided in this embodiment. Because the support 201 and the cross beam 202 penetrate through the gas collecting box 10, a support opening 201b and a cross beam opening 202a are provided at corresponding positions of the gas collecting box 10, so that the support 201 and the cross beam 202 respectively pass through. The bracket opening 201b and the beam opening 202a are not limited to the positions shown in the drawings, and may be flexibly arranged according to the specific positions where the bracket 201 and the beam 202 penetrate. The support opening 201b and the beam opening 202a can be tightly attached to the support 201 or the beam 202, so as to prevent the exhaust gas in the gas collecting box 10 from leaking and prevent the gas collecting box 10 from shaking. In fig. 5 and 6, the support 201 is disposed on the base beam 203, the beam 202 is erected on the support 201, and the header box 10 is fixed on the beam 202 by the fixing jig 104, and the opening surface of the header box 10 is ensured to be aligned with the bottom surface of the semiconductor front-end device module 100. The exhaust gas in the front-end semiconductor module 100 enters the gas collecting box 10 below through the through hole 103a in the raised floor 103. Optionally, the surfaces of the support 201 and the cross beam 202 are further formed with a corrosion-resistant material layer, such as a polymer material coating, to prevent the chemical gas in the header tank 10 from corroding the support 201 and the cross beam 202 passing through the header tank 10, thereby causing damage to the floor support structure. In this embodiment, the gas collecting box 10 is provided with the support opening 201b and the beam opening 202a, so that the installation position of the gas collecting box 10 is not limited by the support 201 and the beam 202, and the gas collecting box can be adapted to the semiconductor front-end device module 100 installed at any position on the raised floor 103. It should be noted that the support frame 201 and the cross beam 202 provided in this embodiment may be designed independently for supporting the raised floor 103 in this embodiment, or may be the same as other raised floors in a dust-free plant. In addition, other existing support structures for the raised floor may be used depending on the actual conditions in the cleanroom, and are not limited to the support and beam structure described in this embodiment.
As an example, fig. 8 is a schematic view of the exhaust device of the semiconductor front-end equipment module in this embodiment. The semiconductor front-end device module 100 is disposed on the raised floor 103, and exhaust gas generated in the semiconductor front-end device module 100 enters the gas collecting box 10 through the raised floor 103 and is exhausted by the vacuum pumping module 102 through the exhaust pipeline 101. In addition, through the air suction effect of the gas collection box 10 at the bottom, a downward flowing air flow is formed in the semiconductor front-end equipment module 100, so that the generation of vortex in the semiconductor front-end equipment module 100 and the pollution of particles caused by the vortex are avoided, and the newly formed particles in the semiconductor front-end equipment module 100 can be discharged in time through the gas collection box 10.
EXAMPLE III
Referring to fig. 9, in this embodiment, compared with the second embodiment, the exhaust apparatus of the front end of semiconductor device module further includes an exhaust gas treatment module 105, and the exhaust gas treatment module 105 is disposed in the exhaust pipe 101. Since the exhaust collected by the collecting box 10 may be toxic or corrosive and cannot be directly discharged to the surrounding environment, the present embodiment further provides the exhaust treatment module 105 in the exhaust pipeline 101 to perform harmless treatment on the exhaust in the exhaust pipeline 101. For example, the exhaust treatment module 105 may comprise an exhaust combustion chamber, which performs direct combustion treatment on the exhaust; or an adsorption type harm removing barrel containing built-in activated carbon, acid-base neutralizing substances or ion exchange resin is used for adsorbing harmful components in the waste gas. After the exhaust gas in the exhaust pipeline 101 is processed by the exhaust gas processing module 105, the processed exhaust gas is discharged to the surrounding environment through the vacuum pumping module 102, so that possible pollution of the exhaust gas to the environment is avoided.
In summary, the present invention provides an exhaust apparatus for a front-end semiconductor device module, including: the gas collection box is arranged below an exhaust gas source, an opening surface is arranged at the top of the gas collection box, the interior of the gas collection box is communicated with the exhaust gas source through the opening surface, and the exhaust gas source comprises a semiconductor front-stage equipment module; and the exhaust pipeline is arranged at the bottom or the side surface of the gas collection box, and one end of the exhaust pipeline is communicated with the inside of the gas collection box. According to the exhaust device of the semiconductor front-end equipment module, the gas collection box arranged below the semiconductor front-end equipment module is introduced, and the waste gas is exhausted from the exhaust pipeline, so that the harm to the surrounding environment caused by toxic waste gas leakage is avoided; in addition, a vertically downward airflow is generated in the semiconductor front-end equipment module, so that particle pollution caused by eddy current in the semiconductor front-end equipment module is reduced, and the wafer yield is improved.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. An exhaust apparatus of semiconductor forepart equipment module, characterized by, includes:
the gas collection box is arranged below an exhaust gas source, an opening surface is arranged at the top of the gas collection box, the interior of the gas collection box is communicated with the exhaust gas source through the opening surface, and the exhaust gas source comprises a semiconductor front-stage equipment module; and
and the exhaust pipeline is arranged at the bottom or the side surface of the gas collection box, and one end of the exhaust pipeline is communicated with the inside of the gas collection box.
2. The exhaust apparatus of the semiconductor front-end equipment module according to claim 1, wherein the size of the opening surface of the header tank matches the size of the bottom surface of the semiconductor front-end equipment module, such that the opening surface coincides with the bottom surface of the semiconductor front-end equipment module.
3. The exhaust apparatus for a semiconductor front-end device module according to claim 1, further comprising a raised floor disposed between the semiconductor front-end device module and the gas collection box, the raised floor having a plurality of through holes communicating an upper surface and a lower surface of the raised floor, so that the exhaust gas of the semiconductor front-end device module is collected to the gas collection box through the through holes.
4. The exhaust system of a semiconductor front end equipment module according to claim 3, further comprising a support and a beam supported on the support, the raised floor being supported on the beam, the header being mounted in a support elevation of the support.
5. The exhaust apparatus for a semiconductor front end equipment module according to claim 4, wherein the surfaces of the support and the cross member are formed with a corrosion-resistant material layer.
6. The exhaust apparatus of the front end of semiconductor device module as claimed in claim 1, further comprising a vacuum pumping module connected to the outlet of the exhaust duct.
7. The exhaust apparatus of the front end of semiconductor module as recited in claim 1, further comprising an exhaust treatment module disposed in the exhaust conduit.
8. The exhaust apparatus of the front end semiconductor device module as claimed in claim 1, wherein the inner wall of the gas collecting box and the inner wall of the exhaust duct are formed with a corrosion-resistant material layer.
9. The exhaust device of the semiconductor front-end equipment module according to any one of claims 1 to 8, wherein the bottom of the gas collecting box is provided with an exhaust hole connected with one end of the exhaust pipeline; the bottom of the gas collection box is also provided with a bracket hole for the bracket to longitudinally penetrate through the gas collection box; and cross beam openings are arranged on two sides of the gas collection box, so that the cross beams transversely penetrate through the gas collection box.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811250717.6A CN111106048A (en) | 2018-10-25 | 2018-10-25 | Exhaust device of semiconductor front-end equipment module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811250717.6A CN111106048A (en) | 2018-10-25 | 2018-10-25 | Exhaust device of semiconductor front-end equipment module |
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| Publication Number | Publication Date |
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| CN111106048A true CN111106048A (en) | 2020-05-05 |
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| CN201811250717.6A Pending CN111106048A (en) | 2018-10-25 | 2018-10-25 | Exhaust device of semiconductor front-end equipment module |
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2018
- 2018-10-25 CN CN201811250717.6A patent/CN111106048A/en active Pending
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