CN208806234U - The exhaust apparatus of semiconductor leading portion equipment mould group - Google Patents
The exhaust apparatus of semiconductor leading portion equipment mould group Download PDFInfo
- Publication number
- CN208806234U CN208806234U CN201821736900.2U CN201821736900U CN208806234U CN 208806234 U CN208806234 U CN 208806234U CN 201821736900 U CN201821736900 U CN 201821736900U CN 208806234 U CN208806234 U CN 208806234U
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- China
- Prior art keywords
- leading portion
- mould group
- plenum chamber
- equipment mould
- exhaust
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Abstract
The utility model provides a kind of exhaust apparatus of semiconductor leading portion equipment mould group, include: plenum chamber, is set to the lower section of exhaust gas source, opening face is provided at the top of plenum chamber, the inside of plenum chamber is connected via opening face with exhaust gas source, wherein the exhaust gas source includes semiconductor leading portion equipment mould group；Gas exhaust piping is set to plenum chamber bottom or side, and is connected inside one end of the gas exhaust piping and plenum chamber.The utility model provides a kind of exhaust apparatus of semiconductor leading portion equipment mould group, is discharged by introducing the plenum chamber being set to below semiconductor leading portion equipment mould group, and by exhaust gas from gas exhaust piping, avoids the harm caused by surrounding enviroment due to poisonous fume leakage；In addition, also generating air-flow vertically downward in semiconductor leading portion equipment mould group, reduces the particle contamination that semiconductor leading portion equipment mould group internal cause vortex generates, improve wafer yield.
Description
Technical field
The utility model relates to semiconductor integrated circuit manufacturing fields, more particularly to a kind of semiconductor leading portion equipment mould group
Exhaust apparatus.
Background technique
Currently, the semiconductor production equipment in semiconductor integrated circuit manufacturing field will use a variety of toxic chemical gas
Body, these chemical gas can cause to seriously affect once revealing to periphery human life and property safety.Wherein, leading portion equipment
Mould group (EFEM, Equipment Front End Module) is as a kind of for transmitting the semiconductor apparatus components of wafer, pole
Easily chemical gas remaining in apparatus cavity is taken out of during wafer transmits and is leaked in surrounding enviroment.For example,
Ion implantation device for p-type injection generally will use BF3As injection ion source, when wafer to be processed completes ion implanting
Technique and when being spread out of from ion implantation device by leading portion equipment mould group, remaining BF in technical process3Gas easily adheres to
In crystal column surface, and entered in leading portion equipment mould group therewith.These have high irritating BF to human body3Gas is once from leading portion
Equipment mould group is leaked in external environment, it is possible to cause surrounding operating personnel it is uncomfortable so that poisoning, even result in workshop
Stop line.Vortex is generated in addition, easily transmitting with wafer in the enclosed environment of existing leading portion equipment mould group, and then raises particle
Object simultaneously pollutes crystal column surface, causes wafer yield low.
Therefore, it is necessary to propose a kind of exhaust apparatus of new semiconductor leading portion equipment mould group, solve the above problems.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of semiconductor leading portion equipment
The exhaust apparatus of mould group, for solving the problems, such as that poisonous fume is revealed in semiconductor leading portion equipment mould group in the prior art.
To achieve the above object and other related purposes, the utility model provides a kind of semiconductor leading portion equipment mould group
Exhaust apparatus characterized by comprising
Plenum chamber is set to the lower section of exhaust gas source, is provided with opening face at the top of the plenum chamber, the plenum chamber it is interior
Portion is connected via the opening face with the exhaust gas source, wherein the exhaust gas source includes semiconductor leading portion equipment mould group；And
It is connected inside gas exhaust piping, one end of the gas exhaust piping and the plenum chamber.
As a kind of optinal plan of the utility model, the size in the opening face of the plenum chamber and the semiconductor
The bed-plate dimension of leading portion equipment mould group matches, and the opening face coincides with the bottom surface of the semiconductor leading portion equipment mould group.
As a kind of optinal plan of the utility model, the exhaust apparatus of the semiconductor leading portion equipment mould group further includes frame
Vacant lot plate, the raised flooring are set between the semiconductor leading portion equipment mould group and the plenum chamber, the raised flooring
The through-hole of upper surface and lower surface with multiple connection raised floorings, so that the semiconductor leading portion equipment mould group is useless
Gas is collected by the through-hole to the plenum chamber.
As a kind of optinal plan of the utility model, the exhaust apparatus of the semiconductor leading portion equipment mould group further includes branch
The crossbeam of frame and support on the bracket, the raised flooring are supported on the crossbeam, and the plenum chamber is mounted on described
In the bearing height of bracket.
As a kind of optinal plan of the utility model, the surface of the bracket and the crossbeam is formed with resistant material
Layer.
As a kind of optinal plan of the utility model, the exhaust apparatus of the semiconductor leading portion equipment mould group further includes true
Empty air suction module, the vacuum suction module connect the gas outlet of the gas exhaust piping.
As a kind of optinal plan of the utility model, the exhaust apparatus of the semiconductor leading portion equipment mould group further includes giving up
Gas disposal module, the exhaust-gas treatment module are set in the gas exhaust piping.
As a kind of optinal plan of the utility model, the inner wall of the inner wall of the plenum chamber and the gas exhaust piping is formed
There is etch resistant material layer.
As a kind of optinal plan of the utility model, the bottom of the plenum chamber is equipped with gas vent, connects the exhaust
One end of pipeline；The bottom of the plenum chamber is additionally provided with bracket holes, so that bracket longitudinally runs through the plenum chamber；The plenum chamber
Two sides equipped with crossbeam be open, so that crossbeam extends transversely through the plenum chamber.
As described above, the utility model provides a kind of exhaust apparatus of semiconductor leading portion equipment mould group, set by introducing
The plenum chamber being placed in below semiconductor leading portion equipment mould group, and exhaust gas is discharged from gas exhaust piping, it avoids because poisonous fume is let out
Reveal and is endangered caused by surrounding enviroment.In addition, also generating air-flow vertically downward in semiconductor leading portion equipment mould group, reduce
The particle contamination that semiconductor leading portion equipment mould group internal cause vortex generates, improves wafer yield.
Detailed description of the invention
Fig. 1 is shown as gas collection in the exhaust apparatus of the semiconductor leading portion equipment mould group provided in the utility model embodiment one
The schematic diagram of case and gas exhaust piping.
Fig. 2 is shown as gas collection in the exhaust apparatus of the semiconductor leading portion equipment mould group provided in the utility model embodiment one
The side view of case and gas exhaust piping.
Fig. 3 is shown as the setting of the exhaust apparatus of the semiconductor leading portion equipment mould group provided in the utility model embodiment one
Schematic diagram.
Fig. 4 is shown as the top view of the raised flooring provided in the utility model embodiment two.
Fig. 5 is shown as the gas collection of the exhaust apparatus of the semiconductor leading portion equipment mould group provided in the utility model embodiment two
Case is set to the schematic diagram between bracket and crossbeam.
Fig. 6 is shown as the gas collection of the exhaust apparatus of the semiconductor leading portion equipment mould group provided in the utility model embodiment two
Case is set to the front view between bracket and crossbeam.
Fig. 7 is shown as gas collection in the exhaust apparatus of the semiconductor leading portion equipment mould group provided in the utility model embodiment two
The schematic diagram of case and gas exhaust piping.
Fig. 8 is shown as the setting of the exhaust apparatus of the semiconductor leading portion equipment mould group provided in the utility model embodiment two
Schematic diagram.
Fig. 9 is shown as the setting of the exhaust apparatus of the semiconductor leading portion equipment mould group provided in the utility model embodiment three
Schematic diagram.
Component label instructions
100 semiconductor leading portion equipment mould groups
10 plenum chambers
10a etch resistant material layer
101 gas exhaust pipings
102 vacuum suction modules
103 raised floorings
103a through-hole
104 stationary fixtures
105 exhaust-gas treatment modules
201 brackets
201a gas vent
201b bracket aperture
202 crossbeams
202a crossbeam opening
203 foundation beams
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands the further advantage and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Fig. 1 is please referred to Fig. 9.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, though it is only shown with related component in the utility model rather than when according to actual implementation in diagram
Component count, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout form may also be increasingly complex.
Embodiment one
It please refers to Fig.1 to Fig.3, the utility model provides a kind of exhaust apparatus of semiconductor leading portion equipment mould group, comprising:
Plenum chamber 10, is set to the lower section of exhaust gas source, and the top of the plenum chamber 10 is provided with opening face, the plenum chamber
Inside be connected via the opening face with the exhaust gas source, wherein the exhaust gas source include semiconductor leading portion equipment mould group
100；And
It is connected inside gas exhaust piping 101, one end of the gas exhaust piping 101 and the plenum chamber 10.
As shown in Figure 1, being collection described in the exhaust apparatus of the semiconductor leading portion equipment mould group provided by the present embodiment
The schematic diagram of gas tank 10, Fig. 2 are its side views.The exhaust apparatus of semiconductor leading portion equipment mould group provided in the present embodiment by
Plenum chamber 10 and gas exhaust piping 101 collectively form.Wherein, the top of the plenum chamber 10 is provided with opening face, the plenum chamber
10 inner space is communicated with the outside by the opening face.The gas exhaust piping 101 is set to the bottom of the plenum chamber 10,
In the present embodiment, it is connected provided with two gas exhaust pipings 101 with the bottom of the plenum chamber 10.Optionally, described
The diameter range of gas exhaust piping 101 is between 80~120mm, such as 100mm, but the diameter of the gas exhaust piping 101 and unlimited
It, can be according to actually required exhaust effect flexible setting in above range.The gas exhaust piping 101 by gas vent 201a and
The plenum chamber 10 is connected, and connection structure should seal and secured, exhaust leak will not be made into surrounding enviroment.Described in figure
Gas exhaust piping 101 only symbolically marks part, and specific length can be selected freely according to the actual situation.In the utility model
Other embodiments in, the side wall in the plenum chamber, the quantity of the gas exhaust piping also can be set in the gas exhaust piping
It can be set to one or more than two.When the plenum chamber 10 is placed in the lower section of the exhaust gas source, exhaust gas passes through described
Opening face enters and is collected in the plenum chamber 10, and is discharged by the gas exhaust piping 101, this just concentrates exhaust gas
Recycling, without being leaked in ambient enviroment.
As shown in figure 3, the exhaust gas source includes semiconductor manufacturing facility, it especially include partly leading for semiconductor manufacturing facility
Body leading portion equipment mould group 100.In semiconductor integrated circuit manufacturing process, toxic chemistry generally inevitably can be all used
Gas, these chemical gas are such as leaked in surrounding enviroment, it is possible to cause significant damage.Especially for semiconductor manufacturing facility
Semiconductor leading portion equipment mould group for, since it has the function of connectivity device and external environment and transmits wafer, originally at
It is easily attached to crystal column surface in technical process in the chemical gas of equipment inner sealing environment, and enters institute together with wafer
It states in semiconductor leading portion equipment mould group.And the semiconductor leading portion equipment mould group and external workshop condition will not generally be fully sealed
Isolation, this is possible to be diffused into harmful chemical gas in ambient enviroment and cause damages.Therefore, it is provided in this implementation
The exhaust apparatus of semiconductor leading portion equipment mould group can be used for the harmful chemicals gas in the semiconductor leading portion equipment mould group 100
Collection.Certainly, in the other embodiments of the utility model, the exhaust apparatus of the semiconductor leading portion equipment mould group can also be with
Applied to other, there may be the semiconductor manufacturing facility of chemical gas disclosure risk or other exhaust gas sources.
In Fig. 3, the semiconductor leading portion equipment mould group 100 as exhaust gas source is set to the upper of the plenum chamber 10
Side, the size in the opening face of the plenum chamber 10 are matched with the bed-plate dimension of the semiconductor leading portion equipment mould group 100, institute
State the bottom surface that opening face coincides with the semiconductor leading portion equipment mould group 100.This allows for being located at the semiconductor leading portion equipment
Exhaust gas in mould group 100 can be completely collected by the plenum chamber 10, while also ensuring that the plenum chamber 10 will not occupy volume
The external space.In the present embodiment, the bottom setting of the semiconductor leading portion equipment mould group 100 is open or using open type without screening
Structure is kept off, so that the exhaust gas in the semiconductor leading portion equipment mould group 100 can smoothly enter into the plenum chamber 10.In addition,
By being set to the plenum chamber 10 of 100 lower section of semiconductor leading portion equipment mould group, generates and hang down in semiconductor leading portion equipment mould group 100
Straight downward air-flow avoids the middle generation vortex in semiconductor leading portion equipment mould group 100, reduces semiconductor leading portion equipment mould
Group 100 in because vortex caused by particle contamination, improve wafer yield.
It should be pointed out that in the present embodiment, since the bottom of the semiconductor leading portion equipment mould group 100 needs to connect
And it is bonded the plenum chamber 10, therefore the support fixation of the semiconductor leading portion equipment mould group 100 itself can be by by its side
Production equipment realization is fixed at face or top, or the plenum chamber 10 is set under fixedly plate face, passes through the gas collection
Case 10 supports the semiconductor leading portion equipment mould group 100, and the present embodiment does not limit the semiconductor leading portion equipment mould group 100
Support fixed form.
As an example, again as shown in figure 3, the exhaust apparatus of the semiconductor leading portion equipment mould group further includes vacuum suction mould
Block 102, the vacuum suction module 102 connect the gas outlet of the gas exhaust piping 101.The vacuum suction module 102 can be with
It is the vacuum pump that the exhaust apparatus of the semiconductor leading portion equipment mould group is independently arranged, is also possible to factory service vacuum system.
As an example, as shown in figure 3, the inner wall of the inner wall of the plenum chamber 10 and the gas exhaust piping 101 be formed with it is resistance to
Corrosion material layer 10a, the etch resistant material layer 10a are at least to the chemistry occurred in the semiconductor leading portion equipment mould group 100
Gas has corrosion resistance, in order to avoid the plenum chamber 10 and the gas exhaust piping 101 are damaged after being corroded, generates secondary leakage.
For example, the inner-wall material can choose the resistant materials such as stainless steel or polymeric coating material.
Embodiment two
Fig. 4 to Fig. 8 is please referred to, the present embodiment is compared with the scheme in embodiment one, the semiconductor leading portion equipment mould group
Exhaust apparatus at least further include raised flooring 103, the raised flooring 103 is set to the semiconductor leading portion equipment mould group
Between 100 and the plenum chamber 10 (as shown in Figure 8).
Since the semiconductor leading portion equipment mould group 100 is used to transmit crystalline substance between semiconductor production equipment and wafer carrier
Circle, in order to ensure the stability of wafer transmitting, in the present embodiment, the exhaust apparatus of the semiconductor leading portion equipment mould group is also wrapped
Raised flooring 103 is included, supports the semiconductor leading portion equipment mould group 100 for stablizing.The semiconductor leading portion equipment mould group 100
It is set on the raised flooring 103, by gap between raised flooring 103 described in muti-piece or the raised flooring 103
Included opening makes the gas sampling in the semiconductor leading portion equipment mould group 100 and enters the gas collection being disposed below
In case 10.
As an example, as shown in figure 4, the raised flooring 103 be provided be connected to the upper surface of the raised flooring 103 with
The through-hole 103a of lower surface.In the dust-free workshop of semiconductor production, in order to ensure the grade of cleanliness of workshop condition is tieed up
It holds in higher level, such as 100 grades even 1 grade, the flowing of air in workshop is perpendicular unidirectional, therefore floor is generally all in workshop
It is set as the floor with through-hole, so that upper air flows into, forms vertical one-way gas flow.It is frame provided by this implementation in Fig. 4
The top view of vacant lot plate 103, the through-hole 103a of upper surface and lower surface thereon with multiple connection raised floorings 103.
The raised flooring 103 of the exhaust apparatus of the semiconductor leading portion equipment mould group in the present embodiment also uses the through-hole floor,
It may insure that the air flowing in the semiconductor leading portion equipment mould group 100 is perpendicular unidirectional, make described in the exhaust gas generated process
Through-hole is collected to the plenum chamber 10.In addition, the embodiment also has the significant advantage being mutually compatible with existing workshop condition,
The seamless connection being laid with existing cell floor may be implemented.In the present embodiment, the semiconductor leading portion equipment mould group 100
Bottom is the unobstructed structure of open type, so that the exhaust gas in the semiconductor leading portion equipment mould group 100 can be by described aerial
Floor 103 enters in the plenum chamber 10.
As shown in Figures 5 to 7, the exhaust apparatus of the semiconductor leading portion equipment mould group further includes bracket 201 and be supported on
Crossbeam 202 on the bracket 201, the raised flooring 103 are supported on the crossbeam 202, and the plenum chamber 10 is mounted on
In the bearing height of the bracket 201.Fig. 5 is that the plenum chamber 10 is set between the bracket 201 and the crossbeam 202
Schematic diagram, Fig. 6 are its front views.Wherein, Fig. 5 is the structural perspective of exhibition stand 201 and crossbeam 202, is not drawn into and is layed in
The raised flooring 103 on the crossbeam 202；Fig. 6 is the side view of exhibition stand 201 and crossbeam 202, draws and is layed in institute
State the raised flooring 103 on crossbeam 202.Fig. 7 is the stereoscopic schematic diagram of the plenum chamber 10 provided by the present embodiment.By
Run through the plenum chamber 10 with the crossbeam 202 in the bracket 201, bracket is provided on 10 corresponding position of plenum chamber
Aperture 201b and crossbeam opening 202a, so that the bracket 201 and the crossbeam 202 pass through respectively.The bracket aperture 201b
It is not limited to position as shown in the figure with crossbeam opening 202a, it can be perforative according to the bracket 201 and the crossbeam 202
Specific location flexible setting.The bracket aperture 201b and crossbeam opening 202a can be with the bracket 201 or the cross
Beam 202 fits closely, in order to avoid the shaking of exhaust leak and the plenum chamber 10 in the plenum chamber 10.In fig. 5 and fig.,
The bracket 201 is set on foundation beam 203, and the crossbeam 202 is set up on the bracket 201, and the plenum chamber 10 passes through
Stationary fixture 104 is fixed on the crossbeam 202, and ensures that the opening of the plenum chamber 10 is set in face of the quasi- semiconductor leading portion
The bottom surface of standby mould group 100.Exhaust gas in the semiconductor leading portion equipment mould group 100 passes through described on the raised flooring 103
Through-hole 103a enters in the plenum chamber 10 of lower section.Optionally, the surface of the bracket 201 and the crossbeam 202 is also formed
There are etch resistant material layer, such as macromolecule material coating, to prevent the chemically gas in the plenum chamber 10 described to passing through
The bracket 201 and the crossbeam 202 in plenum chamber 10 generate corrosion, in turn result in the damage of floor support structure.This reality
Example is applied by the way that the bracket aperture 201b and crossbeam opening 202a are arranged on the plenum chamber 10, makes the plenum chamber 10
Setting position do not limited to by the bracket 201 and the crossbeam 202, be placed in the raised flooring so as to be adapted to
The semiconductor leading portion equipment mould group 100 of any position on 103.It should be pointed out that described provided in the present embodiment
Bracket 201 and the crossbeam 202 can be the support independent design for the raised flooring 103 in the present embodiment,
Identical bracket and crossbeam can be used with the raised flooring of other in dust-free workshop.In addition it is also possible to according in dust-free workshop
Actual conditions use other existing support constructions of raised flooring, and be not limited to bracket described in the present embodiment and crossbeam
Structure.
As an example, as shown in figure 8, being setting for the exhaust apparatus of the semiconductor leading portion equipment mould group in the present embodiment
Set schematic diagram.The semiconductor leading portion equipment mould group 100 is set on the raised flooring 103, the semiconductor leading portion equipment
The exhaust gas generated in mould group 100 is entered in the plenum chamber 10 by the raised flooring 103, and passes through the gas exhaust piping
101 are taken away by the vacuum suction module 102.In addition, by the air-extraction function of plenum chamber 10 described in bottom, in the semiconductor
The air-flow to flow downward is formd in leading portion equipment mould group 100, avoids and is generated in the semiconductor leading portion equipment mould group 100
It is vortexed and by being vortexed caused Particulate Pollution, the particulate matter newly formed in the semiconductor leading portion equipment mould group 100 also can
Pass through the discharge in time of plenum chamber 10.
Embodiment three
Referring to Fig. 9, the present embodiment is compared with the scheme in embodiment two, the exhaust of the semiconductor leading portion equipment mould group
Device further includes exhaust-gas treatment module 105, and the exhaust-gas treatment module 105 is set in the gas exhaust piping 101.Due to described
Exhaust gas collected by plenum chamber 10 may have toxicity or corrosivity, cannot be directly discharged in ambient enviroment, this implementation also exists
It is provided with the exhaust-gas treatment module 105 in the gas exhaust piping 101, the exhaust gas in the gas exhaust piping 101 is carried out harmless
Change processing.For example, exhaust-gas treatment module 105 may include waste gas burning room, direct burning processing is carried out to the exhaust gas；Or
Absorption type comprising built-in active carbon, acid-base neutralization substance or ion exchange resin is removed the evil bucket, to the harmful components in exhaust gas into
Row absorption.After being handled by the exhaust-gas treatment module 105 exhaust gas in the gas exhaust piping 101, using described
Vacuum suction module 102 is discharged into ambient enviroment, avoids the pollution that exhaust gas may cause environment.
In conclusion the utility model provides a kind of exhaust apparatus of semiconductor leading portion equipment mould group, comprising: gas collection
Case is set to the lower section of exhaust gas source, and opening face is provided at the top of the plenum chamber, and the inside of the plenum chamber is opened via described
Mouth face is connected with the exhaust gas source, wherein the exhaust gas source includes semiconductor leading portion equipment mould group；Gas exhaust piping is set to institute
Plenum chamber bottom or side is stated, and is connected inside one end of the gas exhaust piping and the plenum chamber.The utility model is mentioned
The exhaust apparatus of the semiconductor leading portion equipment mould group of confession, by introducing the gas collection being set to below semiconductor leading portion equipment mould group
Case, and exhaust gas is discharged from gas exhaust piping, avoid the harm caused by surrounding enviroment due to poisonous fume leakage；In addition, also
Air-flow vertically downward is generated in semiconductor leading portion equipment mould group, is reduced semiconductor leading portion equipment mould group internal cause vortex and is generated
Particle contamination, improve wafer yield.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (9)
1. a kind of exhaust apparatus of semiconductor leading portion equipment mould group characterized by comprising
Plenum chamber is set to the lower section of exhaust gas source, and opening face, the inside warp of the plenum chamber are provided at the top of the plenum chamber
It is connected by the opening face with the exhaust gas source, wherein the exhaust gas source includes semiconductor leading portion equipment mould group；And
It is connected inside gas exhaust piping, one end of the gas exhaust piping and the plenum chamber.
2. the exhaust apparatus of semiconductor leading portion equipment mould group according to claim 1, which is characterized in that the plenum chamber
The size in the opening face is matched with the bed-plate dimension of the semiconductor leading portion equipment mould group, coincides with the opening face described
The bottom surface of semiconductor leading portion equipment mould group.
3. the exhaust apparatus of semiconductor leading portion equipment mould group according to claim 1, which is characterized in that before the semiconductor
Section equipment mould group exhaust apparatus further include raised flooring, the raised flooring be set to the semiconductor leading portion equipment mould group with
Between the plenum chamber, the raised flooring has the upper surface of multiple connection raised floorings and the through-hole of lower surface, with
Collect the exhaust gas of the semiconductor leading portion equipment mould group to the plenum chamber by the through-hole.
4. the exhaust apparatus of semiconductor leading portion equipment mould group according to claim 3, which is characterized in that the exhaust apparatus
It further include the crossbeam of bracket and support on the bracket, the raised flooring is supported on the crossbeam, the plenum chamber peace
In the bearing height of the bracket.
5. the exhaust apparatus of semiconductor leading portion equipment mould group according to claim 4, which is characterized in that the bracket and institute
The surface for stating crossbeam is formed with etch resistant material layer.
6. the exhaust apparatus of semiconductor leading portion equipment mould group according to claim 1, which is characterized in that the exhaust apparatus
It further include vacuum suction module, the vacuum suction module connects the gas outlet of the gas exhaust piping.
7. the exhaust apparatus of semiconductor leading portion equipment mould group according to claim 1, which is characterized in that the exhaust apparatus
It further include exhaust-gas treatment module, the exhaust-gas treatment module is set in the gas exhaust piping.
8. the exhaust apparatus of semiconductor leading portion equipment mould group according to claim 1, which is characterized in that the plenum chamber
The inner wall of inner wall and the gas exhaust piping is formed with etch resistant material layer.
9. the exhaust apparatus of -8 any semiconductor leading portion equipment mould groups according to claim 1, which is characterized in that the collection
The bottom of gas tank is equipped with gas vent, connects one end of the gas exhaust piping；The bottom of the plenum chamber is additionally provided with bracket holes, for
Bracket longitudinally runs through the plenum chamber；The two sides of the plenum chamber are open equipped with crossbeam, so that crossbeam extends transversely through the gas collection
Case.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821736900.2U CN208806234U (en) | 2018-10-25 | 2018-10-25 | The exhaust apparatus of semiconductor leading portion equipment mould group |
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| CN201821736900.2U CN208806234U (en) | 2018-10-25 | 2018-10-25 | The exhaust apparatus of semiconductor leading portion equipment mould group |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524776A (en) * | 2020-04-30 | 2020-08-11 | 北京北方华创微电子装备有限公司 | Front-end module, control method thereof and semiconductor processing equipment |
| CN112750717A (en) * | 2019-10-30 | 2021-05-04 | 夏泰鑫半导体(青岛)有限公司 | Front-end and rear-end module of equipment and semiconductor processing station with front-end and rear-end modules of equipment |
-
2018
- 2018-10-25 CN CN201821736900.2U patent/CN208806234U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112750717A (en) * | 2019-10-30 | 2021-05-04 | 夏泰鑫半导体(青岛)有限公司 | Front-end and rear-end module of equipment and semiconductor processing station with front-end and rear-end modules of equipment |
| CN112750717B (en) * | 2019-10-30 | 2022-12-02 | 夏泰鑫半导体(青岛)有限公司 | Front-end and rear-end module of equipment and semiconductor processing station with front-end and rear-end modules of equipment |
| CN111524776A (en) * | 2020-04-30 | 2020-08-11 | 北京北方华创微电子装备有限公司 | Front-end module, control method thereof and semiconductor processing equipment |
| CN111524776B (en) * | 2020-04-30 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Front-end module, control method thereof and semiconductor processing equipment |
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