CN111095482B - 处理靶材料的方法 - Google Patents
处理靶材料的方法 Download PDFInfo
- Publication number
- CN111095482B CN111095482B CN201880059897.1A CN201880059897A CN111095482B CN 111095482 B CN111095482 B CN 111095482B CN 201880059897 A CN201880059897 A CN 201880059897A CN 111095482 B CN111095482 B CN 111095482B
- Authority
- CN
- China
- Prior art keywords
- layer
- target material
- target
- additional layer
- radiation beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H10P14/3816—Pulsed laser beam
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Electromagnetism (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1714802.4A GB2566477A (en) | 2017-09-14 | 2017-09-14 | Method of processing a target material |
| GB1714802.4 | 2017-09-14 | ||
| PCT/EP2018/074649 WO2019053082A1 (en) | 2017-09-14 | 2018-09-12 | METHOD OF PROCESSING TARGET MATERIAL |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111095482A CN111095482A (zh) | 2020-05-01 |
| CN111095482B true CN111095482B (zh) | 2024-06-28 |
Family
ID=60159472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880059897.1A Active CN111095482B (zh) | 2017-09-14 | 2018-09-12 | 处理靶材料的方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11107679B2 (cg-RX-API-DMAC10.html) |
| EP (1) | EP3682463A1 (cg-RX-API-DMAC10.html) |
| JP (1) | JP7360172B2 (cg-RX-API-DMAC10.html) |
| KR (1) | KR102566382B1 (cg-RX-API-DMAC10.html) |
| CN (1) | CN111095482B (cg-RX-API-DMAC10.html) |
| GB (1) | GB2566477A (cg-RX-API-DMAC10.html) |
| TW (1) | TWI801418B (cg-RX-API-DMAC10.html) |
| WO (1) | WO2019053082A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7571073B2 (ja) * | 2022-03-24 | 2024-10-22 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、プログラム、及び基板処理装置 |
| CN116532808A (zh) * | 2023-05-17 | 2023-08-04 | 泰兰特激光技术(武汉)有限公司 | 一种局域改变无机非金属材料表面载流子浓度的方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI316736B (en) * | 2003-05-02 | 2009-11-01 | Au Optronics Corp | Method of fabricating polysilicon film by excimer laser crystallization process |
| JP4769491B2 (ja) * | 2004-06-04 | 2011-09-07 | 株式会社 液晶先端技術開発センター | 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置 |
| KR100646937B1 (ko) * | 2005-08-22 | 2006-11-23 | 삼성에스디아이 주식회사 | 다결정 실리콘 박막트랜지스터 및 그 제조방법 |
| TW200713460A (en) * | 2005-09-22 | 2007-04-01 | Adv Lcd Tech Dev Ct Co Ltd | Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method |
| TWI280292B (en) * | 2005-12-12 | 2007-05-01 | Ind Tech Res Inst | Method of fabricating a poly-silicon thin film |
| KR101375834B1 (ko) * | 2007-11-20 | 2014-03-18 | 삼성전자주식회사 | 다결정 실리콘 박막 및 이를 적용하는 박막 트랜지스터의제조방법 |
| US8557040B2 (en) * | 2007-11-21 | 2013-10-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparation of epitaxially textured thick films |
| WO2009068756A1 (fr) * | 2007-11-28 | 2009-06-04 | Commissariat A L'energie Atomique | Procede de cristallisation |
| WO2009111340A2 (en) * | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
| JP5342898B2 (ja) * | 2009-02-26 | 2013-11-13 | 三菱電機株式会社 | 逆スタガ構造の薄膜トランジスタ及びその製造方法 |
| JP2011003666A (ja) * | 2009-06-17 | 2011-01-06 | Sony Corp | 照射装置および半導体素子の製造方法 |
| US20150053263A1 (en) * | 2012-03-30 | 2015-02-26 | Teijin Limited | Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer |
| WO2014047415A1 (en) * | 2012-09-20 | 2014-03-27 | Intest Corporation | Apparatus and method for irradiating |
| JP2014090045A (ja) * | 2012-10-30 | 2014-05-15 | Sanken Electric Co Ltd | イオン導入層の活性化方法、および、半導体装置の製造方法 |
| TWI593024B (zh) * | 2015-07-24 | 2017-07-21 | 友達光電股份有限公司 | 薄膜電晶體的製造方法 |
| CN116213918B (zh) * | 2015-09-09 | 2026-07-14 | 伊雷克托科学工业股份有限公司 | 镭射处理设备、镭射处理工件的方法及相关配置 |
-
2017
- 2017-09-14 GB GB1714802.4A patent/GB2566477A/en not_active Withdrawn
-
2018
- 2018-09-12 KR KR1020207008416A patent/KR102566382B1/ko active Active
- 2018-09-12 WO PCT/EP2018/074649 patent/WO2019053082A1/en not_active Ceased
- 2018-09-12 CN CN201880059897.1A patent/CN111095482B/zh active Active
- 2018-09-12 JP JP2020515236A patent/JP7360172B2/ja active Active
- 2018-09-12 EP EP18768889.0A patent/EP3682463A1/en active Pending
- 2018-09-14 TW TW107132502A patent/TWI801418B/zh active
-
2020
- 2020-02-05 US US16/782,894 patent/US11107679B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| GB201714802D0 (en) | 2017-11-01 |
| JP2020533807A (ja) | 2020-11-19 |
| JP7360172B2 (ja) | 2023-10-12 |
| TWI801418B (zh) | 2023-05-11 |
| US20200211844A1 (en) | 2020-07-02 |
| WO2019053082A1 (en) | 2019-03-21 |
| TW201923824A (zh) | 2019-06-16 |
| EP3682463A1 (en) | 2020-07-22 |
| CN111095482A (zh) | 2020-05-01 |
| US11107679B2 (en) | 2021-08-31 |
| KR102566382B1 (ko) | 2023-08-11 |
| GB2566477A (en) | 2019-03-20 |
| KR20200051657A (ko) | 2020-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |