CN111081832A - Mini LED chip and manufacturing method - Google Patents
Mini LED chip and manufacturing method Download PDFInfo
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- CN111081832A CN111081832A CN201911368214.3A CN201911368214A CN111081832A CN 111081832 A CN111081832 A CN 111081832A CN 201911368214 A CN201911368214 A CN 201911368214A CN 111081832 A CN111081832 A CN 111081832A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The invention discloses a Mini LED chip and a manufacturing method thereof, comprising a GaN substrate, a P-type contact surface, a current stabilizing layer, a P-type current injection layer, a P-type welding combination interface metal layer, a buffer insulating layer, a stress release layer, an insulating full spectrum reflecting layer, an N-type welding combination interface metal layer, an N-type current injection layer, an N-type contact surface and a current stabilizing layer which are sequentially stacked; according to the invention, through the use of the special functional layers of the P-type contact surface and the current stabilizing layer, the P-type current injection layer, the buffer insulating layer, the stress release layer, the N-type current injection layer, the N-type contact surface and the current stabilizing layer, the problems of current resistance, insulating layer stress, insulating layer adhesion and adhesion between a bonding pad and solder paste are solved, so that the reliability and various performances of the Mini LED chip have excellent performances, and the production efficiency and the production yield of the Mini LED chip can be ensured.
Description
Technical Field
The invention relates to the technical field of semiconductor electronics, in particular to a Mini LED chip and a manufacturing method thereof.
Background
The Mini LED chip generally refers to an LED chip with the side length of 100-200 um, and the application field and the manufacturing technology of the Mini LED chip are greatly different from those of the traditional LED chip due to the characteristic of miniaturization. The Mini LED is generally used for a direct type backlight of an outdoor large screen with ultrahigh resolution, a movie screen and a high-end LCD display, and the 3 kinds of application scenes cannot be realized by the general LED. However, the conventional Mini LED chip has a small size, a complex structure, and high requirements for reliability such as soldering, temperature resistance, and current resistance, and thus has the problems of difficulty in manufacturing, complex process, low yield, and the like, wherein the reasons for the low yield include but are not limited to insufficient reliability of the insulating layer, large stress of the insulating layer, insufficient current resistance of the metal, and insufficient adhesion of the metal pad to the solder paste or the anisotropic conductive adhesive.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a Mini LED chip and a manufacturing method thereof are provided to take into account the performance and production of the Mini LED chip.
In order to solve the technical problems, the invention adopts the technical scheme that:
a Mini LED chip comprises a GaN substrate, a P-type contact surface, a current stabilizing layer, a P-type current injection layer, a P-type welding combination interface metal layer, a buffer insulating layer, a stress release layer, an insulating full-spectrum reflecting layer, an N-type welding combination interface metal layer, an N-type current injection layer, an N-type contact surface and a current stabilizing layer;
the P-type contact surface, the current stabilizing layer and the P-type current injection layer are sequentially stacked on one side of the GaN substrate, and the N-type contact surface, the current stabilizing layer and the N-type current injection layer are sequentially stacked on the other side of the GaN substrate;
the buffer insulating layer sequentially covers one side of the GaN substrate, the N-type current injection layer and the other side of the GaN substrate, and wraps the bottom end of the N-type welding bonding interface metal layer on one side of the N-type welding bonding interface metal layer and is higher than the plane of the GaN substrate;
the stress release layer covers the buffer insulating layer, and the insulating full-spectrum reflecting layer covers the stress release layer;
the P-type welding combination interface metal layer sequentially penetrates through the insulation full spectrum reflecting layer, the stress release layer and the buffer insulating layer and is connected with the P-type current injection layer, and the N-type welding combination interface metal layer sequentially penetrates through the insulation full spectrum reflecting layer, the stress release layer and the buffer insulating layer and is connected with the N-type current injection layer.
In order to solve the technical problem, the invention adopts another technical scheme as follows:
a manufacturing method of a Mini LED chip comprises the following steps:
s1, carrying out pattern transfer through a photoetching facility, and simultaneously manufacturing a P-type contact surface and a current stabilizing layer, and an N-type contact surface and a current stabilizing layer on the GaN substrate in an evaporation mode;
s2, performing pattern transfer through a photoetching facility, and simultaneously manufacturing a P-type current injection layer on the P-type contact surface and the current stabilizing layer and manufacturing an N-type current injection layer on the N-type contact surface and the current stabilizing layer by using an evaporation method;
s3, manufacturing a buffer insulating layer covering one side of the GaN substrate, the N-type current injection layer and the other side of the GaN substrate through coating equipment, performing pattern transfer through a photoetching facility, and performing pattern corrosion in a chemical corrosion mode;
s4, manufacturing a stress release layer on the buffer insulating layer through coating equipment, carrying out pattern transfer through a photoetching facility, and carrying out pattern corrosion by using a chemical corrosion mode or an ICP (inductively coupled plasma) etching mode;
s5, manufacturing an insulating full-spectrum reflecting layer on the stress release layer through coating equipment, carrying out pattern transfer through a photoetching facility, and carrying out pattern corrosion by using a chemical corrosion mode or an ICP (inductively coupled plasma) etching mode;
s6, pattern transfer is carried out through photoetching facilities, an evaporation mode is used for simultaneously manufacturing a P-type welding bonding interface metal layer on a P-type current injection layer and manufacturing an N-type welding bonding interface metal layer on an N-type current injection layer, the P-type welding bonding interface metal layer sequentially penetrates through an insulation full spectrum reflection layer, a stress release layer and a buffer insulation layer and then is stacked on the P-type current injection layer, and the N-type welding bonding interface metal layer sequentially penetrates through the insulation full spectrum reflection layer, the stress release layer and the buffer insulation layer and then is stacked on the N-type current injection layer.
The invention has the beneficial effects that: a Mini LED chip and its manufacturing method, by using the special functional layers of P-type contact surface and current stabilization layer, P-type current injection layer, buffer insulation layer, stress release layer, N-type current injection layer, and N-type contact surface and current stabilization layer, thereby solving the problems of current resistance, insulating layer stress, insulating layer adhesion and the adhesion between the bonding pad and the solder paste, the reliability, the current expansibility, the over-drive resistance, the high temperature resistance, the environmental corrosion resistance and the like of the Mini LED chip are obviously improved by other methods, the brightness and the light-emitting efficiency are higher, the welding is convenient at the use end, the reliability of the manufacturing process is high, the process window is stable, the cost is proper, the reliability and various performances of the Mini LED chip can be guaranteed to have excellent performances, and meanwhile, the production efficiency and the production yield of the Mini LED chip can be guaranteed.
Drawings
Fig. 1 is a schematic structural diagram of a Mini LED chip according to an embodiment of the present invention.
Description of reference numerals:
1. a substrate layer; 2. n-type gallium nitride; 3. a plurality of layers of quantum wells; 4. p-type gallium nitride; 5. a current spreading layer; 6. a P-type contact surface and a current stabilizing layer; 7. a P-type current injection layer; 8. a P-type welding bonding interface metal layer; 9. a buffer insulating layer; 10. a stress release layer; 11. an insulating full spectrum reflective layer; 12. an N-type welding bonding interface metal layer; 13. an N-type current injection layer; 14. an N-type contact surface and a current stabilizing layer.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1, a Mini LED chip includes a GaN substrate, a P-type contact surface and current stabilization layer, a P-type current injection layer, a P-type welding interface metal layer, a buffer insulating layer, a stress release layer, an insulating full spectrum reflection layer, an N-type welding interface metal layer, an N-type current injection layer, an N-type contact surface and a current stabilization layer;
the P-type contact surface, the current stabilizing layer and the P-type current injection layer are sequentially stacked on one side of the GaN substrate, and the N-type contact surface, the current stabilizing layer and the N-type current injection layer are sequentially stacked on the other side of the GaN substrate;
the buffer insulating layer sequentially covers one side of the GaN substrate, the N-type current injection layer and the other side of the GaN substrate, and wraps the bottom end of the N-type welding bonding interface metal layer on one side of the N-type welding bonding interface metal layer and is higher than the plane of the GaN substrate;
the stress release layer covers the buffer insulating layer, and the insulating full-spectrum reflecting layer covers the stress release layer;
the P-type welding combination interface metal layer sequentially penetrates through the insulation full spectrum reflecting layer, the stress release layer and the buffer insulating layer and is connected with the P-type current injection layer, and the N-type welding combination interface metal layer sequentially penetrates through the insulation full spectrum reflecting layer, the stress release layer and the buffer insulating layer and is connected with the N-type current injection layer.
From the above description, the beneficial effects of the present invention are: through the use of the special functional layers of the P-type contact surface and the current stabilizing layer, the P-type current injection layer, the buffer insulating layer, the stress release layer, the N-type current injection layer, the N-type contact surface and the current stabilizing layer, the problems of current resistance, insulating layer stress, insulating layer adhesion and adhesion between a bonding pad and solder paste are solved, so that the reliability, current expansibility, over-drive resistance, high temperature resistance, environmental corrosion resistance and the like of the Mini LED chip are obviously improved by other methods, the brightness and the light emitting efficiency are high, the welding at the use end is convenient, the reliability of the manufacturing process is high, a process window is stable, the cost is proper, the reliability and various performances of the Mini LED chip can be guaranteed, and the production efficiency and the production yield of the Mini LED chip can be guaranteed.
Further, the GaN substrate comprises a substrate layer, an N-type gallium nitride layer, a multi-layer quantum well layer, a P-type gallium nitride layer and a current expansion layer;
the N-type gallium nitride is positioned in the middle area of the substrate layer, the multilayer quantum well layer, the P-type gallium nitride layer and the current expansion layer are sequentially stacked on one side of the N-type gallium nitride, the P-type contact surface and the current stabilization layer are positioned on the current expansion layer, and the N-type contact surface and the current stabilization layer are positioned on the other side of the N-type gallium nitride;
buffer insulating layer cover in proper order in one side of substrate layer, current extension layer on the N type gallium nitride the multilayer quantum well layer with the clearance between N type contact surface and the current stabilization layer N type current injection layer and the opposite side of substrate layer, buffer insulating layer is in on one side at P type welding bonding interface metal level place with P type current injection layer flushes, buffer insulating layer is in parcel on one side at N type welding bonding interface metal level place the bottom of N type welding bonding interface metal level just is higher than the plane at current extension layer place.
From the above description, it can be seen that a complete Mini LED chip structure is provided to ensure its performance and to ensure its feasibility of fabrication.
Further, the P-type and N-type welding bonding interface metal layers are alloys composed of Ni, Cr, Al, Ti, Pt, and Au.
As can be seen from the above description, the alloy composed of Ni, Cr, Al, Ti, Pt and Au is used to enhance the bonding strength between the P-type and N-type solder bonding interface metal layers and the solder paste or the solderable substrate, so that the solder bonding force is stronger.
Further, the P-type welding and bonding interface metal layer and the N-type welding and bonding interface metal layer comprise 2-3 nm of Cr, 1500-2000 nm of Al, 200-500 nm of Ti, 10-30 nm of Pt, 200-500 nm of Au and 40-100 nm of Ni which are stacked in sequence.
From the above description, it can be seen that a preferred embodiment of the P-type and N-type solder bonding interface metal layers is provided, and in practical applications, the metals are combined into an alloy according to the above stacking order and thickness, so that the alloy has a strong solder bonding force under the condition of limited layer thickness.
Further, the insulating full spectrum reflecting layer comprises at least two transparent metal oxides formed by overlapping, the transparent metal oxides are silicon oxide or titanium oxide, the overlapping thickness of the insulating full spectrum reflecting layer is 3-7um, the number of layers is 10-100, and the thickness of each layer is 30-300 nm.
From the above description, it can be seen that different transparent metal oxides are used to form the insulating full-spectrum reflective layer by overlapping, so as to implement full-band reflection.
Referring to fig. 1, a method for manufacturing a Mini LED chip includes the following steps:
s1, carrying out pattern transfer through a photoetching facility, and simultaneously manufacturing a P-type contact surface and a current stabilizing layer, and an N-type contact surface and a current stabilizing layer on the GaN substrate in an evaporation mode;
s2, performing pattern transfer through a photoetching facility, and simultaneously manufacturing a P-type current injection layer on the P-type contact surface and the current stabilizing layer and manufacturing an N-type current injection layer on the N-type contact surface and the current stabilizing layer by using an evaporation method;
s3, manufacturing a buffer insulating layer covering one side of the GaN substrate, the N-type current injection layer and the other side of the GaN substrate through coating equipment, performing pattern transfer through a photoetching facility, and performing pattern corrosion in a chemical corrosion mode;
s4, manufacturing a stress release layer on the buffer insulating layer through coating equipment, carrying out pattern transfer through a photoetching facility, and carrying out pattern corrosion by using a chemical corrosion mode or an ICP (inductively coupled plasma) etching mode;
s5, manufacturing an insulating full-spectrum reflecting layer on the stress release layer through coating equipment, carrying out pattern transfer through a photoetching facility, and carrying out pattern corrosion by using a chemical corrosion mode or an ICP (inductively coupled plasma) etching mode;
s6, pattern transfer is carried out through photoetching facilities, an evaporation mode is used for simultaneously manufacturing a P-type welding bonding interface metal layer on a P-type current injection layer and manufacturing an N-type welding bonding interface metal layer on an N-type current injection layer, the P-type welding bonding interface metal layer sequentially penetrates through an insulation full spectrum reflection layer, a stress release layer and a buffer insulation layer and then is stacked on the P-type current injection layer, and the N-type welding bonding interface metal layer sequentially penetrates through the insulation full spectrum reflection layer, the stress release layer and the buffer insulation layer and then is stacked on the N-type current injection layer.
From the above description, the beneficial effects of the present invention are: through the use of the special functional layers of the P-type contact surface and the current stabilizing layer, the P-type current injection layer, the buffer insulating layer, the stress release layer, the N-type current injection layer, the N-type contact surface and the current stabilizing layer, the problems of current resistance, insulating layer stress, insulating layer adhesion and adhesion between a bonding pad and solder paste are solved, so that the reliability, current expansibility, over-drive resistance, high temperature resistance, environmental corrosion resistance and the like of the Mini LED chip are obviously improved by other methods, the brightness and the light emitting efficiency are high, the welding at the use end is convenient, the reliability of the manufacturing process is high, a process window is stable, the cost is proper, the reliability and various performances of the Mini LED chip can be guaranteed, and the production efficiency and the production yield of the Mini LED chip can be guaranteed.
Further, the step S1 is preceded by the step of:
carrying out pattern transfer through a photoetching facility, etching N-type gallium nitride at the middle position of the substrate layer by using ICP equipment, and sequentially manufacturing a multi-layer quantum well layer and a P-type gallium nitride layer on one side of the N-type gallium nitride;
and manufacturing a current expansion layer on the P-type gallium nitride layer by using an evaporation method, carrying out pattern transfer by using a photoetching facility, and carrying out pattern corrosion by using a chemical corrosion method to obtain the GaN substrate.
From the above description, it can be seen that a complete Mini LED chip structure is provided to ensure its performance and to ensure its feasibility of fabrication.
Further, the step S6 of manufacturing the P-type welding bonding interface metal layer and the N-type welding bonding interface metal layer specifically includes:
cr of 2-3 nm, Al of 1500-2000 nm, Ti of 200-500 nm, Pt of 10-30 nm, Au of 200-500 nm and Ni of 40-100 nm are stacked in sequence, and then are ablated to become an alloy.
As can be seen from the above description, alloys composed of Ni, Cr, Al, Ti, Pt and Au are synthesized into an alloy according to the above stacking order and thickness to improve the bonding strength between the P-type and N-type solder bonding interface metal layers and the solder paste or the solder substrate, so that the solder bonding force is strong.
Further, the step S5 of manufacturing the insulating full spectrum reflective layer specifically includes:
and overlapping at least two transparent metal oxides in the stress release layer in sequence, wherein the number of layers is 10-100, the thickness of each layer is 30-300nm, and the transparent metal oxides are silicon oxide or titanium oxide until the overlapped thickness is 3-7 um.
From the above description, it can be seen that different transparent metal oxides are used to form the insulating full-spectrum reflective layer by overlapping, so as to implement full-band reflection.
Further, the etching solution of the chemical etching in the steps S3 to S5 is hydrofluoric acid, ammonium fluoride or hydrochloric acid, and the etching gas of the ICP etching in the steps S4 and S5 is trifluoromethane, carbon tetrafluoride or sulfur hexafluoride.
From the above description, it can be seen that the preferred embodiments of the etching solution and the etching gas are provided to achieve better etching effects.
Referring to fig. 1, a first embodiment of the present invention is:
a Mini LED chip comprises a substrate layer 1, an N-type gallium nitride layer 2, a multi-layer quantum well layer 3, a P-type gallium nitride layer 4, a current expansion layer 5, a P-type contact surface and current stabilization layer 6, a P-type current injection layer 7, a P-type welding combination interface metal layer 8, a buffer insulating layer 9, a stress release layer 10, an insulating full-spectrum reflection layer 11, an N-type welding combination interface metal layer 12, an N-type current injection layer 13, an N-type contact surface and current stabilization layer 14.
As shown in fig. 1, N-type gallium nitride 2 is located in the middle region of a substrate layer 1, a plurality of quantum well layers 3, P-type gallium nitride layers 4, a current spreading layer 5, a P-type contact surface and current stabilizing layer 6 and a P-type current injection layer 7 are sequentially stacked on one side of the N-type gallium nitride 2, and an N-type contact surface and current stabilizing layer 14 and an N-type current injection layer 13 are sequentially stacked on one side of the other side of the N-type gallium nitride 2; the buffer insulating layer 9 sequentially covers one side of the substrate layer 1, the current expanding layer 5, a gap between the multi-layer quantum well layer 3 and the N-type contact surface on the N-type gallium nitride 2 and the current stabilizing layer 14, the N-type current injection layer 13 and the other side of the substrate layer 1, the buffer insulating layer 9 is flush with the P-type current injection layer 7 on one side where the P-type welding bonding interface metal layer 8 is located, and the buffer insulating layer 9 wraps the bottom end of the N-type welding bonding interface metal layer 12 on one side where the N-type welding bonding interface metal layer 12 is located and is higher than the plane where the current expanding layer 5 is located; the stress release layer 10 covers the buffer insulating layer 9, and the insulating full-spectrum reflecting layer 11 covers the stress release layer 10; the P-type welding bonding interface metal layer 8 sequentially penetrates through the insulation full spectrum reflecting layer 11, the stress release layer 10 and the buffer insulating layer 9 and is connected with the P-type current injection layer 7, and the N-type welding bonding interface metal layer 12 sequentially penetrates through the insulation full spectrum reflecting layer 11, the stress release layer 10 and the buffer insulating layer 9 and is connected with the N-type current injection layer 13.
In the present embodiment, the metal material of the P-type contact surface and current stabilization layer 6 and the N-type contact surface and current stabilization layer 14 is an alloy of at least two of the three metals of Ni, Cr and Al, wherein the most preferable combination is an alloy of the three metals of Ni, Cr and Al. In this embodiment, 0.5 to 1nm Ni, 1.2 to 2.5Cr and 50nmAl are stacked in this order.
In the present embodiment, the metal material of the P-type current injection layer 7 and the N-type current injection layer 13 is an alloy of at least two of the five metals of Cr, Al, Ti, Pt, and Au, wherein the most preferable combination is an alloy of the five metals, and in the present embodiment, 2.5nmCr, 100nmAl, 240nmTi, 150nmPt, and 1300nmAu are stacked in this order.
In this embodiment, the material of the buffer insulating layer 9 is silicon oxide, titanium oxide, hafnium oxide, or tantalum oxide, and the material of the stress relieving layer 10 is silicon oxide or titanium oxide.
In the present embodiment, the P-type bonding interface metal layer 8 and the N-type bonding interface metal layer 12 are formed by sequentially stacking 2-3 nm of Cr, 1500-2000 nm of Al, 200-500 nm of Ti, 10-30 nm of Pt, 200-500 nm of Au and 40-100 nm of Ni, specifically 0.25nm of Cr, 1800nm of Al, 300nm of Ti, 20nm of Pt, 300nm of Au and 60nm of Ni.
In this embodiment, the insulating full spectrum reflective layer 11 includes at least two transparent metal oxides formed by overlapping, the transparent metal oxides are silicon oxide or titanium oxide, the overlapping thickness of the insulating full spectrum reflective layer 11 is 3-7um, the number of layers is 10-100, the thickness of each layer is 30-300nm, in this embodiment, specifically 50 layers, each layer is nm, and the overlapping thickness of the insulating full spectrum reflective layer 11 is 5 um.
Referring to fig. 1, the second embodiment of the present invention is:
a manufacturing method of a Mini LED chip comprises the following steps:
carrying out pattern transfer by using photoetching facilities and materials such as a photoetching machine and photoresist according to a designed chip pattern, etching N-type gallium nitride 2 on the middle position of a substrate layer 1 by using ICP equipment, and sequentially manufacturing a multi-layer quantum well layer 3 and a P-type gallium nitride layer 4 on one side of the N-type gallium nitride 2;
a current spreading layer 5 is formed on the P-type gallium nitride layer 4 by evaporation, the current spreading layer 5 may be made of indium tin oxide, indium tungsten oxide, or nickel-gold alloy, the pattern transfer is performed by using a photolithography device, a photoresist, and other photolithography facilities and materials according to a designed chip pattern, and the pattern etching is performed by using a chemical etching method to obtain a GaN substrate, in this embodiment, the etching solution of the chemical etching is at least one of hydrochloric acid, oxalic acid, and ferric chloride, for example, a 20% oxalic acid solution or a mixture ratio of hydrochloric acid and ferric chloride is 12: 88, respectively.
S1, using photoetching facilities such as photoetching machine and photoresist, and materials to transfer patterns according to the designed chip patterns, and simultaneously manufacturing a P-type contact surface and current stabilizing layer 6 and an N-type contact surface and current stabilizing layer 14 on the GaN substrate by using an electron beam evaporation or sputtering evaporation mode, wherein the metal material is an alloy formed by combining at least two of three metals of Ni, Cr and Al, and the optimal combination is an alloy of the three metals of Ni, Cr and Al. In this embodiment, 0.5-1 nm Ni, 1.2-2.5 Cr and 50nmAl are stacked in sequence; removing redundant photoresist by using a degumming solution cleaning mode to perform ablation to form alloy;
s2, transferring patterns of the materials and the photolithography tools such as a photolithography machine and a photoresist according to the designed chip pattern, simultaneously forming a P-type current injection layer 7 on the P-type contact surface and the current stabilization layer 6 and an N-type current injection layer 13 on the N-type contact surface and the current stabilization layer 14 by electron beam evaporation or sputter evaporation, wherein the metal material is an alloy formed by combining at least two of the five metals of Cr, Al, Ti, Pt and Au, the best combination is an alloy of the five metals, in this embodiment, 2.5nmCr, 100nmAl, 240nmTi, 150nmPt and 1300nmAu are sequentially stacked to be melted and alloyed, and the excess photoresist is removed by cleaning with a photoresist remover;
s3, manufacturing a buffer insulating layer 9 covering one side of the GaN substrate, the N-type current injection layer 13 and the other side of the GaN substrate by using PECVD equipment or ALD equipment, wherein the buffer insulating layer 9 is made of silicon oxide, titanium oxide, hafnium oxide or tantalum oxide, pattern transfer is performed according to a designed chip pattern by using photoetching facilities and materials such as a photoetching machine and photoresist, pattern corrosion is performed by using a chemical corrosion mode, and a corrosion solution of the chemical corrosion is hydrofluoric acid, ammonium fluoride or hydrochloric acid;
s4, manufacturing a stress release layer 10 on the buffer insulating layer 9 by using PECVD equipment or ALD equipment, wherein the stress release layer 10 is made of silicon oxide or titanium oxide, pattern transfer is performed according to a designed chip pattern by using photoetching facilities and materials such as a photoetching machine and photoresist, pattern corrosion is performed by using a chemical corrosion mode or an ICP (inductively coupled plasma) etching mode, a chemical corrosion solution is hydrofluoric acid, ammonium fluoride or hydrochloric acid, and an etching gas is trifluoromethane, carbon tetrafluoride or sulfur hexafluoride;
s5, manufacturing an insulating full-spectrum reflecting layer 11 on a stress release layer 10 by using optical ion evaporation equipment, specifically, overlapping at least two transparent metal oxides on the stress release layer 10 in sequence, wherein the number of layers is 10-100, the thickness of each layer is 30-300nm until the overlapped thickness is 3-7um, the transparent metal oxides are silicon oxide or titanium oxide, performing pattern transfer according to designed chip patterns by using photoetching facilities and materials such as photoetching machines and photoresists, and the like, performing pattern corrosion by using a chemical corrosion mode or an ICP (inductively coupled plasma) etching mode, wherein a corrosive liquid of the chemical corrosion is hydrofluoric acid, ammonium fluoride or hydrochloric acid, and an etching gas is trifluoromethane, carbon tetrafluoride or sulfur hexafluoride;
s6, using photoetching facilities such as photoetching machine and photoresist, and materials to perform pattern transfer according to a designed chip pattern, using an evaporation mode to simultaneously manufacture a P-type welding bonding interface metal layer 8 on a P-type current injection layer 7 and an N-type welding bonding interface metal layer 12 on an N-type current injection layer 13, specifically, sequentially stacking 2-3 nm Cr, 1500-2000 nm Al, 200-500 nm Ti, 10-30 nm Pt, 200-500 nm Au and 40-100 nm Ni, then melting to form an alloy, forming the metal layer, sequentially passing the P-type welding bonding interface metal layer 8 through an insulation full spectrum reflection layer 11, a stress release layer 10 and a buffer insulation layer 9 and then stacking on the P-type current injection layer 7, sequentially passing the N-type welding bonding interface metal layer 12 through the insulation full spectrum reflection layer 11, the stress release layer 10 and the buffer insulation layer 9 and then stacking on the N-type current injection layer 13, and removing the redundant photoresist by using a degumming solution cleaning mode.
In summary, the Mini LED chip and the manufacturing method thereof provided by the present invention use special functional layers, i.e. the P-type contact surface and the current stabilizing layer, the P-type current injection layer, the buffer insulating layer, the stress releasing layer, the N-type current injection layer, and the N-type contact surface and the current stabilizing layer, thereby solving the problems of current resistance, insulating layer stress, insulating layer adhesion and the adhesion between the bonding pad and the solder paste, the reliability, the current expansibility, the over-drive resistance, the high temperature resistance, the environmental corrosion resistance and the like of the Mini LED chip are obviously improved by other methods, the brightness and the light-emitting efficiency are higher, the welding is convenient at the use end, the reliability of the manufacturing process is high, the process window is stable, the cost is proper, the reliability and various performances of the Mini LED chip can be guaranteed to have excellent performances, and meanwhile, the production efficiency and the production yield of the Mini LED chip can be guaranteed; alloys composed of Ni, Cr, Al, Ti, Pt and Au are synthesized into the alloy according to the corresponding stacking sequence and thickness so as to improve the bonding strength between the P-type welding bonding interface metal layer and the N-type welding bonding interface metal layer and the solder paste or the welding substrate and enable the welding bonding force to be stronger; different transparent metal oxides are used for overlapping to form an insulating full-spectrum reflecting layer so as to realize full-wave-band reflection.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (10)
1. A Mini LED chip is characterized in that: the GaN-based light-emitting diode comprises a GaN substrate, a P-type contact surface and current stabilizing layer, a P-type current injection layer, a P-type welding combination interface metal layer, a buffer insulating layer, a stress release layer, an insulating full-spectrum reflecting layer, an N-type welding combination interface metal layer, an N-type current injection layer, an N-type contact surface and a current stabilizing layer;
the P-type contact surface, the current stabilizing layer and the P-type current injection layer are sequentially stacked on one side of the GaN substrate, and the N-type contact surface, the current stabilizing layer and the N-type current injection layer are sequentially stacked on the other side of the GaN substrate;
the buffer insulating layer sequentially covers one side of the GaN substrate, the N-type current injection layer and the other side of the GaN substrate, and wraps the bottom end of the N-type welding bonding interface metal layer on one side of the N-type welding bonding interface metal layer and is higher than the plane of the GaN substrate;
the stress release layer covers the buffer insulating layer, and the insulating full-spectrum reflecting layer covers the stress release layer;
the P-type welding combination interface metal layer sequentially penetrates through the insulation full spectrum reflecting layer, the stress release layer and the buffer insulating layer and is connected with the P-type current injection layer, and the N-type welding combination interface metal layer sequentially penetrates through the insulation full spectrum reflecting layer, the stress release layer and the buffer insulating layer and is connected with the N-type current injection layer.
2. The Mini LED chip of claim 1, wherein: the GaN substrate comprises a substrate layer, an N-type gallium nitride layer, a multi-layer quantum well layer, a P-type gallium nitride layer and a current expansion layer;
the N-type gallium nitride is positioned in the middle area of the substrate layer, the multilayer quantum well layer, the P-type gallium nitride layer and the current expansion layer are sequentially stacked on one side of the N-type gallium nitride, the P-type contact surface and the current stabilization layer are positioned on the current expansion layer, and the N-type contact surface and the current stabilization layer are positioned on the other side of the N-type gallium nitride;
buffer insulating layer cover in proper order in one side of substrate layer, current extension layer on the N type gallium nitride the multilayer quantum well layer with the clearance between N type contact surface and the current stabilization layer N type current injection layer and the opposite side of substrate layer, buffer insulating layer is in on one side at P type welding bonding interface metal level place with P type current injection layer flushes, buffer insulating layer is in parcel on one side at N type welding bonding interface metal level place the bottom of N type welding bonding interface metal level just is higher than the plane at current extension layer place.
3. The Mini LED chip of claim 1, wherein: the P-type welding bonding interface metal layer and the N-type welding bonding interface metal layer are made of alloy consisting of Ni, Cr, Al, Ti, Pt and Au.
4. The Mini LED chip as claimed in claim 3, wherein the P-type bonding interface metal layer and the N-type bonding interface metal layer comprise Cr of 2-3 nm, Al of 1500-2000 nm, Ti of 200-500 nm, Pt of 10-30 nm, Au of 200-500 nm and Ni of 40-100 nm stacked in sequence.
5. The Mini LED chip of claim 1, wherein: the insulating full spectrum reflecting layer comprises at least two transparent metal oxides which are formed by overlapping, the transparent metal oxides are silicon oxide or titanium oxide, the overlapping thickness of the insulating full spectrum reflecting layer is 3-7um, the number of layers is 10-100, and the thickness of each layer is 30-300 nm.
6. A method for manufacturing a Mini LED chip is characterized by comprising the following steps:
s1, carrying out pattern transfer through a photoetching facility, and simultaneously manufacturing a P-type contact surface and a current stabilizing layer, and an N-type contact surface and a current stabilizing layer on the GaN substrate in an evaporation mode;
s2, performing pattern transfer through a photoetching facility, and simultaneously manufacturing a P-type current injection layer on the P-type contact surface and the current stabilizing layer and manufacturing an N-type current injection layer on the N-type contact surface and the current stabilizing layer by using an evaporation method;
s3, manufacturing a buffer insulating layer covering one side of the GaN substrate, the N-type current injection layer and the other side of the GaN substrate through coating equipment, performing pattern transfer through a photoetching facility, and performing pattern corrosion in a chemical corrosion mode;
s4, manufacturing a stress release layer on the buffer insulating layer through coating equipment, carrying out pattern transfer through a photoetching facility, and carrying out pattern corrosion by using a chemical corrosion mode or an ICP (inductively coupled plasma) etching mode;
s5, manufacturing an insulating full-spectrum reflecting layer on the stress release layer through coating equipment, carrying out pattern transfer through a photoetching facility, and carrying out pattern corrosion by using a chemical corrosion mode or an ICP (inductively coupled plasma) etching mode;
s6, pattern transfer is carried out through photoetching facilities, an evaporation mode is used for simultaneously manufacturing a P-type welding bonding interface metal layer on a P-type current injection layer and manufacturing an N-type welding bonding interface metal layer on an N-type current injection layer, the P-type welding bonding interface metal layer sequentially penetrates through an insulation full spectrum reflection layer, a stress release layer and a buffer insulation layer and then is stacked on the P-type current injection layer, and the N-type welding bonding interface metal layer sequentially penetrates through the insulation full spectrum reflection layer, the stress release layer and the buffer insulation layer and then is stacked on the N-type current injection layer.
7. The method of claim 6, wherein the step S1 is preceded by the steps of:
carrying out pattern transfer through a photoetching facility, etching N-type gallium nitride at the middle position of the substrate layer by using ICP equipment, and sequentially manufacturing a multi-layer quantum well layer and a P-type gallium nitride layer on one side of the N-type gallium nitride;
and manufacturing a current expansion layer on the P-type gallium nitride layer by using an evaporation method, carrying out pattern transfer by using a photoetching facility, and carrying out pattern corrosion by using a chemical corrosion method to obtain the GaN substrate.
8. The method for manufacturing a Mini LED chip as claimed in claim 6, wherein the steps of manufacturing the P-type bonding interface metal layer and manufacturing the N-type bonding interface metal layer in step S6 are as follows:
cr of 2-3 nm, Al of 1500-2000 nm, Ti of 200-500 nm, Pt of 10-30 nm, Au of 200-500 nm and Ni of 40-100 nm are stacked in sequence, and then are ablated to become an alloy.
9. The method for manufacturing a Mini LED chip as claimed in claim 8, wherein the step S5 of manufacturing the insulating full spectrum reflective layer comprises:
and overlapping at least two transparent metal oxides in the stress release layer in sequence, wherein the number of layers is 10-100, the thickness of each layer is 30-300nm, and the transparent metal oxides are silicon oxide or titanium oxide until the overlapped thickness is 3-7 um.
10. The method of claim 6, wherein the etching solution for chemical etching in steps S3-S5 is hydrofluoric acid, ammonium fluoride or hydrochloric acid, and the etching gas for ICP etching in steps S4 and S5 is trifluoromethane, carbon tetrafluoride or sulfur hexafluoride.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111769184A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Ultraviolet LED chip protection architecture |
| CN111799353A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Method for preparing MiniLED chip |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241493A (en) * | 2013-06-24 | 2014-12-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
| CN106159057A (en) * | 2015-04-01 | 2016-11-23 | 映瑞光电科技(上海)有限公司 | LED chip and preparation method thereof |
| CN107819060A (en) * | 2013-11-27 | 2018-03-20 | 晶元光电股份有限公司 | Semiconductor light-emitting elements |
| CN108807635A (en) * | 2012-07-18 | 2018-11-13 | 世迈克琉明有限公司 | Light emitting semiconductor device |
| CN109713102A (en) * | 2017-10-26 | 2019-05-03 | 丰田合成株式会社 | Light emitting semiconductor device and its manufacturing method |
| CN209199977U (en) * | 2018-11-22 | 2019-08-02 | 华灿光电（浙江）有限公司 | A kind of flip LED chips |
| CN110459653A (en) * | 2019-08-22 | 2019-11-15 | 福建兆元光电有限公司 | A kind of interface metal structure and preparation method for flip-chip |
-
2019
- 2019-12-26 CN CN201911368214.3A patent/CN111081832B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807635A (en) * | 2012-07-18 | 2018-11-13 | 世迈克琉明有限公司 | Light emitting semiconductor device |
| CN104241493A (en) * | 2013-06-24 | 2014-12-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
| CN107819060A (en) * | 2013-11-27 | 2018-03-20 | 晶元光电股份有限公司 | Semiconductor light-emitting elements |
| CN106159057A (en) * | 2015-04-01 | 2016-11-23 | 映瑞光电科技(上海)有限公司 | LED chip and preparation method thereof |
| CN109713102A (en) * | 2017-10-26 | 2019-05-03 | 丰田合成株式会社 | Light emitting semiconductor device and its manufacturing method |
| CN209199977U (en) * | 2018-11-22 | 2019-08-02 | 华灿光电（浙江）有限公司 | A kind of flip LED chips |
| CN110459653A (en) * | 2019-08-22 | 2019-11-15 | 福建兆元光电有限公司 | A kind of interface metal structure and preparation method for flip-chip |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021237823A1 (en) * | 2020-05-27 | 2021-12-02 | 深圳市华星光电半导体显示技术有限公司 | Mini light emitting diode backlight module and manufacturing method therefor |
| CN111799353A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Method for preparing MiniLED chip |
| CN111799354A (en) * | 2020-06-11 | 2020-10-20 | 淮安澳洋顺昌光电技术有限公司 | Preparation method of MiniLED chip with high thrust value |
| CN111769184B (en) * | 2020-07-31 | 2022-03-15 | 佛山紫熙慧众科技有限公司 | Ultraviolet LED chip protection architecture |
| CN111769184A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Ultraviolet LED chip protection architecture |
| WO2022041859A1 (en) * | 2020-08-31 | 2022-03-03 | 福建兆元光电有限公司 | Mini led chip structure and manufacturing method therefor |
| CN111969088A (en) * | 2020-08-31 | 2020-11-20 | 福建兆元光电有限公司 | Mini LED chip structure and manufacturing method thereof |
| WO2022068939A1 (en) * | 2020-09-30 | 2022-04-07 | 深圳市晶相技术有限公司 | Semiconductor structure and application thereof |
| CN112928188A (en) * | 2021-01-25 | 2021-06-08 | 厦门三安光电有限公司 | Light emitting diode, photoelectric module and display device |
| WO2022262166A1 (en) * | 2021-06-18 | 2022-12-22 | 聚灿光电科技（宿迁）有限公司 | Micro led and manufacturing method therefor |
| WO2023070464A1 (en) * | 2021-10-28 | 2023-05-04 | 京东方科技集团股份有限公司 | Light-emitting diode and preparation method therefor, and light-emitting substrate and preparation method therefor |
| CN115050875A (en) * | 2022-06-09 | 2022-09-13 | 福建兆元光电有限公司 | Mini LED capable of improving light-emitting angle and manufacturing method thereof |
| CN115050875B (en) * | 2022-06-09 | 2023-09-08 | 福建兆元光电有限公司 | Mini LED for improving light-emitting angle and manufacturing method thereof |
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