CN108346746B - Organic electroluminescence device and its manufacturing method, display device - Google Patents
Organic electroluminescence device and its manufacturing method, display device Download PDFInfo
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- CN108346746B CN108346746B CN201710054046.5A CN201710054046A CN108346746B CN 108346746 B CN108346746 B CN 108346746B CN 201710054046 A CN201710054046 A CN 201710054046A CN 108346746 B CN108346746 B CN 108346746B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The present invention provides a kind of organic electroluminescence device and its manufacturing methods, display device, the organic electroluminescence device increases the barrier layer on cathode layer, the barrier layer is metal oxide layer or metal hydride layer, since the chemical bond between atoms bond energy of metal hydride or metal oxide is stronger, need biggish energy that could generate damage to metal hydride or metal oxide, therefore the device layer bring that can effectively prevent CVD technique to organic electroluminescence device is damaged, and then improves the performance of organic electroluminescence device.
Description
Technical field
The present invention relates to electroluminescent technology field, in particular to a kind of organic electroluminescence device and its manufacturing method,
Display device.
Background technique
Organic electroluminescence device (Organic Light Emitting Display, OLED) has from main light emission, low
Voltage DC driving, visual angle it is wide, it is light-weight, a series of features such as large scale and flexible panel, simple process can be made, and
Potentiality with low cost, can satisfy the current Information technology epoch wants display technology higher performance and bigger information capacity
It asks, becomes most popular one of the project of current scientific circles and industrial circle.
Generally, film encapsulation method can be used during organic electroluminescence device by, which preparing, is packaged device, Chang Cai
Thin-film package is carried out with chemical vapor deposition (Chemical Vapor Deposition, CVD) technique, and CVD technique can be right
The device layer of OLED generates damage.
In view of the above-mentioned problems, those skilled in the art always search for solving the problems, such as this effective ways.
Summary of the invention
The purpose of the present invention is to provide a kind of organic electroluminescence device and its manufacturing methods, display device, to solve
CVD technique can lead to the problem of damage to the device layer of OLED.
In order to solve the above technical problems, the present invention provides a kind of organic electroluminescence device, the organic electroluminescence devices
Including anode layer, organic luminous layer, cathode layer and the barrier layer being sequentially laminated on substrate, the barrier layer is metal oxide
Layer or metal hydride layer.
It optionally, further include the thin-film encapsulation layer on the barrier layer in the organic electroluminescence device.
It optionally, further include CPL layers in the organic electroluminescence device, described CPL layers is located at the barrier layer
Between thin-film encapsulation layer, or between the cathode layer and barrier layer.
Optionally, in the organic electroluminescence device, the metal hydride is potassium borohydride or sodium borohydride.
Optionally, in the organic electroluminescence device, the metal oxide is molybdenum oxide, tungstic acid or five
V 2 O.
The present invention also provides a kind of display device, the display device includes: using the organic electroluminescence device.
The present invention also provides a kind of manufacturing method of organic electroluminescence device, the manufacture of the organic electroluminescence device
Method includes:
One substrate is provided；
Anode layer, organic luminous layer and the cathode layer being sequentially formed on the substrate；And
It is formed in the barrier layer on the cathode layer, wherein the barrier layer is prepared by metal oxide or metal hydride
It is formed.
Optionally, it in the manufacturing method of the organic electroluminescence device, is prepared using vapor deposition mode according to formation institute
State anode layer, the organic luminous layer, the cathode layer and/or the barrier layer.
Optionally, in the manufacturing method of the organic electroluminescence device, using plasma enhances gas chemistry
Deposition, silk-screen printing or the mode of thermal evaporation form the thin-film encapsulation layer.
In organic electroluminescence device provided by the present invention and its manufacturing method, display device, the organic electroluminescence
Luminescent device increases the barrier layer on cathode layer, and the barrier layer is metal oxide layer or metal hydride layer, by
It is stronger in the chemical bond between atoms bond energy of metal hydride or metal oxide, need biggish energy could be to metal hydride
Or metal oxide generates damage, therefore can effectively prevent CVD technique and bring to the device layer of organic electroluminescence device
Damage, and then improve the performance of organic electroluminescence device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of organic electroluminescence device in one embodiment of the invention；
Fig. 2 is the structural schematic diagram of organic electroluminescence device in another embodiment of the present invention.
In figure:
Substrate -10；Anode layer -11；Organic luminous layer -12；Cathode layer -13；CPL layer -14；Barrier layer -15；Thin-film package
Layer -16.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to organic electroluminescence device proposed by the present invention and its manufacturing method, aobvious
Showing device is described in further detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.It needs
Illustrate, attached drawing is all made of very simplified form and using non-accurate ratio, only to convenient, lucidly auxiliary is said
The purpose of the bright embodiment of the present invention.
Referring to FIG. 1, its structural schematic diagram for organic electroluminescence device in this implementation, as shown in Figure 1, described organic
Electroluminescent device includes: including stacking gradually anode layer 11, organic luminous layer 12, cathode layer 13, CPL layers on the substrate 10
14 (Capping layer, i.e. light removing layer), barrier layer 15 and thin-film encapsulation layer 16；Wherein, the barrier layer is metal oxidation
Nitride layer or metal hydride layer.
Specifically, the metal hydride is potassium borohydride or sodium borohydride；The metal oxide is molybdenum oxide, three oxygen
Change tungsten or vanadic anhydride.Since the chemical bond between atoms bond energy of metal hydride and metal hydride layer is stronger, therefore, it is necessary to
Biggish energy could generate damage to above-mentioned substance, it can be seen that, it can be more effective based on barrier layer 15 of the invention
Avoiding the formation of thin-film encapsulation layer 16, using CVD technique, to device layer, (device layer refers to anode layer 11, organic light emission in the process
Layer 12, the overall structure of cathode layer 13 and CPL layer 14) caused by damage.
Preferably, the metal hydride includes but is not limited to potassium borohydride (KBH4) or sodium borohydride (NaBH4),
Principle is that metal hydride obtains electronics from cathode surface under electric field action, is reduced into alkali metal atom Na, K of low work content,
The work function of these metals and the lumo energy difference of electron transfer layer are very small, and electron injection energy barrier is low, therefore with very good
Electron injection ability.Further, since metal hydride and metal oxide are all to be made of to have one organic matter and inorganic matter
Fixed inorganic performance and organic performance, can be connected CPL layer 14 and thin-film encapsulation layer 16 well, finally play the work of binder
With.
Correspondingly, the present embodiment additionally provides a kind of preparation method of organic electroluminescence device.It is detailed below with reference to Fig. 1
The preparation method for illustrating organic electroluminescence device described in the present embodiment, specifically includes:
S10: a substrate 10 is provided；
S11: anode layer 11, organic luminous layer 12 and the cathode layer 13 being sequentially formed on the substrate 10；And
S12: being formed in the barrier layer 15 on the cathode layer 13, wherein the barrier layer is by metal oxide or metallic hydrogen
Compound prepares to be formed.
In addition, in conjunction with Fig. 1 it is found that further including being formed between the cathode layer 13 and the barrier layer 15 in the present embodiment
CPL layer 14, and be formed on barrier layer 15 thin-film encapsulation layer 16 the step of.
It is prepared specifically, forming each layer of structure of organic electroluminescence device and vapor deposition mode can be used.Preferably, described
Thin-film encapsulation layer using plasma enhances the mode shape of chemical vapor deposition, Inkjet (printing), silk-screen printing or thermal evaporation
At.For example, metal hydride or metal oxide are steamed by way of vapor deposition when forming barrier layer 15 by the way of thermal evaporation
It is plated on the CPL layer 14 and is formed.Barrier layer 15, which is formed in first effect between CPL layer 14 and thin-film encapsulation layer 16, is
Play the role of adhesive；Second effect is to improve light to take out, because the refractive index of CPL layer 14 is 2.0, thin-film encapsulation layer 16
Refractive index be 1.8, the refractive index on the barrier layer 15 prepared using metal hydride or metal oxide is between 1.8-2, energy
A transition effectively is played, reaches very high smooth extraction efficiency.
In another embodiment, referring to FIG. 2, the organic electroluminescence device includes stacking gradually on the substrate 10
Anode layer 11, organic luminous layer 12, cathode layer 13, barrier layer 15, CPL layer 14 and thin-film encapsulation layer 16；Wherein, the barrier layer
15 be metal hydride layer or metal oxide layer.Compared to a upper embodiment, the resistance of organic electroluminescence device in the present embodiment
The position of barrier 15 is different, and barrier layer 15 is located between CPL layer 14 and thin-film encapsulation layer 16 in a upper embodiment, this implementation
In example, barrier layer 15 is located between cathode layer 13 and CPL layer 14.
Correspondingly, the present embodiment additionally provides a kind of preparation method of organic electroluminescence device.It is detailed below with reference to Fig. 2
The preparation method for illustrating organic electroluminescence device described in the present embodiment, specifically includes:
S20: a substrate 10 is provided；
S21: anode layer 11, organic luminous layer 12 and the cathode layer 13 being sequentially formed on the substrate 10；And
S22: being formed in the barrier layer 15 on the cathode layer 13, wherein the barrier layer is by metal oxide or metallic hydrogen
Compound prepares to be formed.
In addition, in conjunction with Fig. 2 it is found that further including the CPL layer 14 and film being formed on the barrier layer 15 in the present embodiment
The step of encapsulated layer 16.
Preferably, each layer of structure is formed by vapor deposition mode, forming barrier layer 15 is by vapor deposition mode by metal
Hydride or metal oxide vapor deposition are formed on the cathode layer 13, subsequent also to pass through plasma enhanced CVD
Mode deposits SiN on barrier layer 15x。
The structure of the organic electroluminescence device illustrated in above-mentioned two embodiment only preferably, institute of the present invention
The organic electroluminescence device structure of protection includes but is not limited to the specific layer structure in above-mentioned two embodiment, as long as organic
Electroluminescent device include be sequentially laminated on substrate anode layer 11, organic luminous layer 12 and cathode layer 13 on the basis of,
It further include the barrier layer 15 on the cathode layer 12, the barrier layer 15 is metal oxide layer or metal hydride layer is
It can.
In another embodiment, the present embodiment additionally provides a kind of display device, and the display device is had using described
Organic electroluminescence devices.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
To sum up, described organic in organic electroluminescence device provided by the present invention and its manufacturing method, display device
Electroluminescent device increases the barrier layer on cathode layer, and the barrier layer is metal oxide layer or metal hydride
Layer, since the chemical bond between atoms bond energy of metal hydride or metal oxide is stronger, needs biggish energy could be to metal
Hydride or metal oxide generate damage, therefore can effectively prevent CVD technique to the device of organic electroluminescence device
Layer bring damage, and then improve the performance of organic electroluminescence device.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (6)
1. a kind of organic electroluminescence device, including the anode layer, organic luminous layer and cathode layer being sequentially laminated on substrate,
It is characterized in that, further includes the barrier layer on the cathode layer and the thin-film encapsulation layer on the barrier layer, it is described
Barrier layer is metal hydride layer, and the metal hydride is potassium borohydride or sodium borohydride, and the barrier layer is for avoiding shape
At using CVD technique to damage caused by device layer during the thin-film encapsulation layer, the device layer include the anode layer,
The organic luminous layer and the cathode layer.
2. organic electroluminescence device as described in claim 1, which is characterized in that further include CPL layers, described CPL layers is located at
Between the barrier layer and thin-film encapsulation layer, or between the cathode layer and barrier layer.
3. a kind of display device, which is characterized in that use organic electroluminescence device as claimed in claim 1 or 2.
4. a kind of preparation method of organic electroluminescence device as claimed in claim 1 or 2 characterized by comprising
One substrate is provided；
Anode layer, organic luminous layer and the cathode layer being sequentially formed on the substrate；And
The barrier layer being sequentially formed on the cathode layer and thin-film encapsulation layer, wherein the barrier layer is prepared by metal hydride
It is formed, the metal hydride is potassium borohydride or sodium borohydride, and the barrier layer is for avoiding the formation of the thin-film encapsulation layer
Damaged caused by device layer using CVD technique in the process, the device layer include the anode layer, the organic luminous layer and
The cathode layer.
5. the preparation method of organic electroluminescence device as claimed in claim 4, which is characterized in that prepared using vapor deposition mode
Sequentially form the anode layer, the organic luminous layer, the cathode layer and/or the barrier layer.
6. the preparation method of organic electroluminescence device as claimed in claim 4, which is characterized in that using plasma enhancing
Chemical vapor deposition, silk-screen printing or the mode of thermal evaporation form the thin-film encapsulation layer.
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| CN110165067A (en) * | 2019-07-01 | 2019-08-23 | 南方科技大学 | A kind of all-transparent is inverted quantum dot light emitting device, preparation method and display device |
| CN111129349A (en) | 2019-12-26 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
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