KR101528663B1 - Organic light emitting device and method for preparing the same - Google Patents

Abstract

The present invention relates to an organic light emitting device and a method of manufacturing the same. Specifically, the organic light emitting device according to the present invention includes a cathode having a two-layer structure and includes a light extracting layer between the substrate and the anode, thereby increasing the reflectivity of the cathode. Accordingly, the refractive index difference between the transparent electrode and the substrate The light emission efficiency of the organic light emitting device, particularly, the organic light emitting device used for the illumination can be increased.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) and a method of manufacturing the same,

The present invention relates to an organic light emitting device and a method of manufacturing the same.

The organic light emitting device OLED typically comprises two electrodes and one or more organic layers positioned between the electrodes.

When a voltage is applied between the first electrode and the second electrode, holes from the first electrode and electrons from the second electrode flow into the organic material layer, respectively, in the organic light emitting device having such a structure, excitons, which emit photons corresponding to energy differences as they fall back to the ground state. According to such a principle, the organic light emitting element generates visible light, and an information display element or an illumination element can be manufactured using the same.

Generally, the organic light emitting device can be manufactured by depositing a first electrode on a substrate, depositing one or more organic layers, and then depositing a second electrode. Therefore, in order to emit light generated in the organic layer, the electrode in a direction to emit light must be transparent. In order to emit light toward the first electrode, not only the first electrode but also the substrate must be transparent.

In a general organic light emitting device, only a part of the light emitted from the light emitting layer in the organic layer comes out into the air because the refractive index of the light emitting layer is about 1.8, which is larger than 1.0, which is the refractive index of air. Because of this difference in refractive index, the light confined in the organic layer having a refractive index of 1.8 is called a wave guide mode, the light confined in a glass substrate (refractive index: about 1.5) "He says.

Korean Patent Publication No. 10-2010-0125135

There is a need in the art to study an organic light emitting device capable of enhancing the efficiency of an organic light emitting device by preventing light loss due to a difference in refractive index between a transparent electrode and a substrate and a method of manufacturing the same.

According to an embodiment of the present invention,

A substrate, an anode, at least one organic material layer, a first cathode including a first metal, and a second cathode including a second metal,

(N ₁ ) of the first metal is in the range of the following formula ( ₁ ), the extinction coefficient (k) of the first metal is in a range of 5 or less,

And a light extracting layer between the substrate and the anode.

[Equation 1]

In the above Equation 1, n ₁ is the refractive index of the first metal and k is the extinction coefficient of the first metal.

In another embodiment of the present invention,

1) forming a light extraction layer on a substrate;

2) forming an anode and one or more organic layers on the light extracting layer;

3) forming a first cathode comprising a first metal having a refractive index (n ₁ ) in the range of the formula ( ₁ ) and a light absorption coefficient (k) of 5 or less on the basis of a wavelength of 550 nm step; And

4) forming a second cathode comprising a second metal on the first cathode

And a method of manufacturing the organic light emitting device.

The organic light emitting device according to the present invention can increase the reflectance of the cathode by including the cathode having the two-layer structure, thereby minimizing the loss of light caused by the difference in refractive index between the transparent electrode and the substrate, It is possible to increase the luminous efficiency of an organic light emitting element, particularly an organic light emitting element used for illumination. Further, the organic light emitting device according to the present invention can improve the light extraction efficiency by including the light extracting layer, and can enhance the durability of the device by suppressing penetration of moisture and air.

1 to 7 are diagrams showing the reflectance of the cathode at a wavelength of 550 nm as one embodiment of the present invention.
8 is a graph showing the reflectance of a cathode in contact with a 1.8 medium when the thickness of Li is varied on an Al cathode according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail.

Unlike a display, in the case of an illumination requiring a large light emitting area, a light emitting structure is generally being developed in an anode direction. This is because it is technically difficult to increase the electrical conductivity of the transparent electrode. Therefore, the transparent electrode of the organic light emitting device for illumination requires a metal auxiliary electrode. It is technically easier to form the metal auxiliary electrode on the anode side than to form it on the cathode side .

In the case of the organic light emitting device in which light is emitted in the anode direction as described above, light emitted from the organic layer is emitted into the air through the anode and the substrate. The substrate generally uses glass having excellent air and moisture shielding properties, and the glass has a refractive index of about 1.5. On the other hand, the average refractive index of the organic material layer emitting light is known to be about 1.8.

Generally, when light travels from a medium having a high refractive index to a medium having a low refractive index, light incident at an angle of more than a critical angle is not passed but is totally reflected. Therefore, even in the case of the organic light emitting diode, since the refractive index of the organic compound layer in which light is generated is about 1.8, only light incident at an angle of less than a critical angle passes through a glass substrate having a refractive index of about 1.5, do. This phenomenon occurs even when light is emitted from the glass substrate into the air having a refractive index of 1.

Therefore, it is possible to prevent the light from being lost from the transparent substrate to the air layer and to be totally reflected in the inside of the transparent substrate among the loss of light generated at the interfaces having different refractive indexes as described above, .

For example, there is a method of changing the surface of a flat glass substrate in order to prevent the loss of light generated at the interface between the glass substrate and air. In this way, the light emitted from the glass substrate can be totally eliminated, thereby improving the efficiency of the OLED. However, this method has a limitation in that it can exert an effect only on the light transmitted from the light emitted from the organic layer to the glass substrate. In order to transfer all the light emitted from the organic layer to the glass substrate, it is necessary to remove the refractive index interface between the organic layer and the glass substrate using a glass substrate having a refractive index of 1.8 or more. However, this method is not suitable for mass production.

In addition, the present inventors have found that a large amount of light is lost in the cathode, and a method for preventing the loss of light generated in the cathode has been studied.

An organic light emitting device according to one embodiment of the present invention includes a substrate, an anode, at least one organic material layer, a first cathode including a first metal, and a second cathode sequentially including a second metal, The refractive index n ₁ of the first metal is in the range of the following formula 1, the extinction coefficient k of the first metal is in a range of 5 or less, and a light extracting layer is provided between the substrate and the anode .

[Equation 1]

In the above Equation 1, n ₁ is the refractive index of the first metal and k is the extinction coefficient of the first metal.

The organic light emitting diode according to an exemplary embodiment of the present invention includes a cathode having a two-layer structure, thereby increasing the reflectance of the cathode, thereby minimizing loss of light caused by a difference in refractive index between the transparent electrode and the substrate And can improve the luminous efficiency of an organic light emitting device, particularly an organic light emitting device used for illumination. In particular, in the present invention, the first cathode in contact with the organic material layer includes the first metal having a low absorption coefficient and a high reflectivity, thereby minimizing the loss of light.

The reflectance (R) for the light incident on the metal at the front can be calculated by the following equation (2).

&Quot; (2) "

In Equation 2, n ₀ is the refractive index of the entry medium, n is the refractive index of the metal, k denotes the absorption coefficient of the metal.

According to Equation (2), the reflectivity of the metal increases as the refractive index (n) of the metal becomes closer to 0, and the reflectivity increases as the extinction coefficient (k) of the metal increases. Also, as the refractive index of the incoming medium increases, the reflectance of the metal decreases, which is disadvantageous for organic light emitting devices.

The refractive index (n ₁ ) of the first metal is in the range of the following formula ( ₁ ), and the extinction coefficient (k) of the first metal is 5 or less . ≪ / RTI >

[Equation 1]

In the present invention, the first cathode containing the first metal may be in contact with the one or more organic layers.

The first metal included in the first cathode and the second metal included in the second cathode may be different metals.

Examples of the first metal include, but are not limited to, Cu, Au, Li, and Ag.

The thickness of the first cathode may be 1 to 100 nm and may be 1 to 50 nm, but is not limited thereto.

The reflectivity of the light incident on the first cathode to the front surface may be 70% or more and may be 80% or more, but the present invention is not limited thereto. Here, the reflectance can be calculated by Equation (1).

In the present invention, the material for forming the second cathode is not particularly limited, and materials and forming methods well known in the art can be used.

Wherein the second cathode comprises a second metal and the second metal is selected from the group consisting of magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, platinum, gold, tungsten, tantalum, And lead.

The thickness of the second cathode may be 50 nm to 5 탆, but is not limited thereto.

Al has a refractive index of 1.015 at 550 nm and an extinction coefficient of 6.627. The reflectance of the Al surface in air having a refractive index of 1 is as high as 91.5% according to Equation (2).

However, in an OLED environment, the reflection surface of Al is not in air, but is exposed to organic matter having a refractive index of about 1.8. At this time, the reflectance of Al is lowered to 85.9%. In the OLED using the inner light extraction layer, the light is reflected on the Al surface while circulating the organic layer several times, and about 14% of the light is lost. When the loss is reduced, the extraction efficiency through the inner light extraction layer is increased. Therefore, it is very important to lower the absorption rate of the OLED itself as well as the development of the inner light extraction layer.

Among metals, Ag is almost unique in that the reflectance is higher than that of Al. Although the efficiency of applying Ag with higher reflectance than Al to the OLED using the inner light extracting layer has been confirmed, the OLED using the Ag cathode is electrically unstable, so that the light composed of a single cell, which is several times larger than the display, In the device, the probability of occurrence of a short is very high and is not yet suitable for mass production application. The probability of occurrence of the short is a phenomenon that a cathode and an anode are connected at a low resistance level due to a defect on a substrate of the device. Since the probability of occurrence of a defect is proportional to the substrate area, Which can be particularly disadvantageous for illumination.

In the present invention, a first metal having a refractive index and an extinction coefficient in the above-described range is thinly formed in front of an Al cathode. With such a structure, a reflectance higher than that of the first metal itself or Al can be obtained.

The first cathode and the second cathode may be formed by a sputtering method, an E-beam evaporation method, a thermal evaporation method, a laser molecular beam epitaxy (L-MBE) method, Physical vapor deposition (PVD) selected from among pulsed laser deposition (PLD); A thermal chemical vapor deposition method, a plasma chemical vapor deposition (PECVD) method, a light chemical vapor deposition method, a laser chemical vapor deposition method, a metal- A chemical vapor deposition method selected from the group consisting of metal organic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE); Or atomic layer deposition (ALD).

In particular, in the present invention, the first metal may be Li and the second metal may be Al or Ag.

In the present invention, the light extracting layer is not particularly limited as long as it can induce light scattering to improve internal light extraction efficiency of the device. For example, the light extracting layer may include a region having a refractive index of 1.7 or more, specifically, a refractive index of 1.7 to 3.0. By including a material having a refractive index of 1.7 or more in the light extracting layer, it is possible to obtain a light scattering effect by a refractive index difference with another region having a relatively low refractive index.

As an example of the present invention, the light extracting layer may be a structure in which scattering particles are dispersed in a binder. The binder may have a higher refractive index than the scattering particles and can induce light scattering due to the difference in refractive index at the interface between the binder and the scattering particles. For example, the binder may have a refractive index in the range of 1.7 or more, or 1.7 to 3.0.

As another example, the light extracting layer may include scattering particles and a binder, and a scattering layer on the opposite side of the surface in contact with the substrate, the scattering particles being formed by scattering particles; And a flat layer formed on the scattering layer to flatten the surface deflection due to the concavo-convex structure of the scattering layer. The light extraction layer can increase the internal light extraction efficiency by forming a large difference in refractive index between the scattering particles and the flat layer. The flat layer may have a refractive index higher than that of the scattering particles. For example, the refractive index of the flat layer may be in the range of 1.7 or more, or 1.7 to 3.0.

As another example, the light extracting layer may include a binder layer formed on a substrate and forming a concave-convex structure; And a flat layer formed on the binder layer to form a flat surface. For example, the refractive index of the flat layer may be in the range of 1.7 or more, or 1.7 to 3.0.

The scattering particles may be spherical, ellipsoidal or amorphous, preferably spherical or ellipsoidal. The average diameter of the scattering particles may be 100 to 300 nm, and may be 150 to 200 nm.

The scattering particles are not particularly limited as long as the scattering particles can scatter light by using a refractive index difference between the binder and the flat layer. For example, air, silicon, silica, glass, titanium oxide, magnesium fluoride, zirconium oxide, alumina, A metal oxide selected from the group consisting of cerium oxide, hafnium oxide, niobium pentoxide, tantalum pentoxide, indium oxide, tin oxide, indium tin oxide, zinc oxide, silicon, zinc sulfide, calcium carbonate, barium sulfate, silicon nitride and aluminum nitride It can be more than a species. As an example, the scattering particles may be titanium dioxide.

The binder is not particularly limited, and may be an organic, inorganic or organic composite binder. For example, the binder may be an inorganic or organic binder. The inorganic or organic binder binder is more advantageous than the organic binder in terms of heat resistance and chemical resistance, so that the performance and life of the device is advantageous. It is advantageous in manufacturing various devices. For example, the binder may be an inorganic or organic material based on silicon oxide, silicon nitride, silicon oxynitride, alumina and siloxane bonds (Si-O) Complexes, and the like. For example, it is possible to form an inorganic binder based on [Si-O] bond by condensation polymerization using siloxane, or a form of organic or inorganic complex in which the alkyl group is not completely removed from the siloxane bond.

The component constituting the flat layer can be selected in the same range as the binder constituting the scattering layer described above. The same component may be used for the binder in the scattering layer and the flat layer, or different components may be used. In addition, the flat layer may further include a high refractive index filler capable of increasing the refractive index. The high refractive index filler is not particularly limited as long as it can be dispersed in the light extracting layer to increase the refractive index. Examples of the high refractive index filler include alumina, aluminum nitride, zirconium oxide, titanium oxide, cerium oxide, hafnium oxide, And may be at least one selected from the group consisting of indium oxide, tin oxide, indium tin oxide, zinc oxide, silicon, sulfur zinc, calcium carbonate, barium sulfate and silicon nitride. In one example, the high refractive index filler may be titanium dioxide.

The average particle size of the high refractive index fillers may range from 5 to 30 nm, specifically from 15 to 25 nm. If the particle diameter of the high refractive index filler is too small, the effect of increasing the refractive index is insignificant, and in the opposite case, the light transmittance can be lowered.

In general, the organic light emitting device generates total internal reflection due to the difference in refractive index between the respective layers constituting the device, which results in deterioration of the luminous efficiency and lowering of the luminance. The present invention improves internal light extraction efficiency by forming a light extraction layer comprising scattering particles on a substrate.

The light extracting layer may be formed only in a light emitting region of the device toward the surface on which the device is deposited. Further, the light extracting layer may be a structure sealed by the substrate and the anode.

In the conventional organic light emitting device, external air (for example, oxygen) or moisture can penetrate into the device through the path where the light extracting layer is formed. Oxygen or moisture introduced into the device shortens the lifetime of the device. However, in the present invention, since the light extracting layer is limited to the light emitting region of the device or is sealed by the substrate and the anode in order to block the inflow of oxygen and moisture due to the formation of the light extracting layer, It is possible to effectively prevent moisture from penetrating into the inside of the device.

In the present invention, the substrate is not limited to those known in the art, and more specifically, it may be a glass substrate, a plastic substrate, or the like, but is not limited thereto.

In the present invention, the anode is formed of at least one selected from magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, platinum, gold, tungsten, tantalum, copper, silver, .

In addition, the anode may be formed of a transparent conductive oxide. The transparent conductive oxide may be at least one selected from the group consisting of In, Sn, Zn, Ga, Ce, Cd, Mg, Ber, Ag, ), Molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt Mn), aluminum (Al), and lanthanum (La).

The anode may be formed by sputtering, E-beam evaporation, thermal evaporation, Laser Molecular Beam Epitaxy (L-MBE), Pulsed Laser Deposition , And PLD); a physical vapor deposition (PVD) method; A thermal chemical vapor deposition method, a plasma chemical vapor deposition (PECVD) method, a light chemical vapor deposition method, a laser chemical vapor deposition method, a metal- A chemical vapor deposition method selected from the group consisting of metal organic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE); Or by using Atomic Layer Deposition (ALD)

In the present invention, an auxiliary electrode may be further included to improve the resistance of the anode. The auxiliary electrode may be formed using a deposition process or a printing process using at least one selected from the group consisting of a conductive sealant and a metal. More specifically, the auxiliary electrode may include, but is not limited to, Cr, Mo, Al, Cu, alloys thereof, and the like.

In the present invention, an insulating layer may be further included on the auxiliary electrode. The insulating layer may be formed using materials and methods known in the art. More specifically, general photoresist materials; Polyimide; Polyacrylics; Silicon nitride; Silicon oxide; Aluminum oxide; Aluminum nitride; Alkali metal oxides; An alkaline earth metal oxide, or the like, but the present invention is not limited thereto. The thickness of the insulating layer may be 10 nm to 10 탆, but is not limited thereto.

The material and method for forming the organic material layer are not particularly limited, and materials and forming methods well known in the art can be used.

The organic material layer may be formed by using a variety of polymer materials in a smaller number of layers by a solvent process such as a spin coating process, a dip coating process, a doctor blading process, a screen printing process, an inkjet printing process or a thermal transfer process, Can be manufactured.

The organic layer according to the present invention may include a light emitting layer and may have a laminated structure including at least one selected from a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

In the present invention, the material capable of forming the hole injection layer is preferably a material having a large work function so that injection of holes into the organic material layer can be smoothly performed. Specific examples of the hole injecting material that can be used in the present invention include metals such as vanadium, chromium, copper, zinc, and gold, or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); ZnO: Al or SnO _2: a combination of a metal and an oxide such as Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole and polyaniline.

In the present invention, the material capable of forming the electron injection layer is preferably a material having a small work function so as to facilitate electron injection into the organic material layer. Specific examples of the electron injecting material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin and lead or alloys thereof; A multilayer structure material such as LiF / Al or LiO ₂ / Al, and the same material as the hole injection electrode material may be used, but is not limited thereto.

In the present invention, the material capable of forming the light emitting layer is a material capable of emitting light in a visible light region by transporting and combining holes and electrons from the hole transporting layer and the electron transporting layer, respectively, and the quantum efficiency for fluorescence or phosphorescence Good materials are desirable. Specific examples include 8-hydroxy-quinoline aluminum complex (Alq ₃ ); Carbazole-based compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzoquinoline-metal compounds; Compounds of the benzoxazole, benzothiazole and benzimidazole series; Polymers of poly (p-phenylenevinylene) (PPV) series; Spiro compounds; Polyfluorene, rubrene; Phosphorescent host CBP [[4,4'-bis (9-carbazolyl) biphenyl]; And the like, but are not limited thereto.

In addition, the luminescent material may further include a phosphorescent dopant or a fluorescent dopant to improve fluorescence or phosphorescence characteristics. Specific examples of the phosphorescent dopant include ir (ppy) (3) (fac tris (2-phenylpyridine) iridium) or F2Irpic [iridium (Ⅲ) bis (4,6-di- fluorophenyl-pyridinato- . As the fluorescent dopant, those known in the art can be used.

In the present invention, the material capable of forming the electron transport layer is a material capable of transferring electrons from the electron injection layer to the light-emitting layer well, and is preferably a material having high mobility to electrons. Specific examples include an Al complex of 8-hydroxyquinoline; Complexes containing Alq ₃ ; Organic radical compounds; Hydroxyflavone-metal complexes, and the like, but are not limited thereto.

Also, one embodiment of a method of manufacturing an organic light emitting diode according to the present invention comprises the steps of: 1) forming a light extracting layer on a substrate; 2) forming an anode and one or more organic layers on the light extracting layer; 3) forming a first cathode comprising a first metal having a refractive index (n ₁ ) in the range of the formula ( ₁ ) and an extinction coefficient (k) of 5 or less on the basis of a wavelength of 550 nm on the organic material layer step; And 4) forming a second cathode comprising a second metal on the first cathode.

Materials and forming methods of the substrate, the anode, the organic material layer, the first cathode and the second cathode are the same as those described above, so a detailed description thereof will be omitted.

In the present invention, the step of forming the light extracting layer may include forming a light extracting layer using a coating liquid containing scattering particles and a binder on a substrate. The scattering particles form a structure dispersed in the binder. The refractive index of the binder is not particularly limited, but may be, for example, 1.7 or more.

As another example, the step of forming the light extracting layer may include forming a scattering layer using a coating liquid containing scattering particles and a binder on a substrate; And forming a flat layer over the formed scattering layer. The refractive index of the flat layer is not particularly limited, but may be, for example, 1.7 or more.

As another example, the step of forming the light extracting layer may include forming a concave-convex structure on the substrate by micro-embossing, and forming a flat layer for flattening the surface on the concave-convex structure formed. For example, a coating solution containing a binder is applied to a substrate, and micro-embossing is performed to form a concave-convex structure. Then, a light extraction layer can be formed by forming a relatively high-refractive-index flat layer on the concavo-convex structure formed. The refractive index of the flat layer may be, for example, 1.7 or more.

In the present invention, the step of forming the light extracting layer may be performed by chemical vapor deposition (CVD), physical vapor deposition (PVD), or sol-gel coating, The method is not particularly limited.

The organic light emitting device according to the present invention can be more suitably applied to an organic light emitting device for illumination.

Hereinafter, preferred embodiments of the present invention will be described in order to facilitate understanding of the present invention. However, the following examples are intended to illustrate the invention and are not intended to limit the scope of the invention.

< Example >

A first cathode including a first metal having a refractive index (n), an extinction coefficient (k), and a thickness described in Tables 1 to 6 was formed in front of an Al second cathode (thickness 0.1 nm, refractive index 1.02, extinction coefficient 6.627) , The reflectance at a wavelength of 550 nm of the cathode contacting the organic material having a refractive index of 1.8 was calculated. The results are as shown in Tables 1 to 6 and Figs. 1 to 6 below.

[Table 1]

[Table 2]

[Table 3]

[Table 4]

[Table 5]

[Table 6]

The results of Tables 1 to 6 show that when a metal having a refractive index of 0.1 and an extinction coefficient of 1 is formed on an Al cathode with a thickness of 50 nm, the reflectance of the metal itself having a refractive index of 0.1 and an extinction coefficient of 1 is 84.4% It can be seen that the cathode can have a reflectance of 90.4%, which is higher than the reflectance of 85.9%.

Al is used as the second cathode and Al and the refractive index (n) on the graph at the maximum reflectance obtained by using any material having the refractive index (n) and the extinction coefficient (k) FIG. 7 shows a graph summarizing a value obtained by subtracting the high reflectance value of the reflectance of an arbitrary metal having a coefficient (k) value when the metal itself contacts the 1.8 medium.

Layer structure having a reflectivity higher than that of Al and another metal electrode, a metal having a refractive index (n) and an extinction coefficient (k), which have a similar refractive index to Al in the 1.8 medium, Should be used.

In particular, in the present invention, the first metal having a refractive index (n ₁ ) in the range of the following formula ( ₁ ) and an extinction coefficient (k) in the range of 5 or less can be used to increase the reflectivity of the cathode , Thereby minimizing the loss of light caused by the difference in refractive index between the transparent electrode and the substrate.

[Equation 1]

In the present invention, a preferable example of the first metal is Li. The refractive index of Li in the 550 nm region is 0.206 and the extinction coefficient is 2.474.

The reflectance of the cathode in contact with the 1.8 medium when the thickness of Li is varied on the Al cathode is shown in Fig. The lower dotted lines in Fig. 8 are the reflectance of the two metals alone. As shown in FIG. 8, higher reflectance can be obtained by using two metals.

As described above, since the organic light emitting device according to the present invention includes the cathode having the two-layer structure, the reflectance of the cathode can be increased, thereby minimizing the loss of light caused by the refractive index difference between the transparent electrode and the substrate And the luminous efficiency of an organic light emitting device, particularly an organic light emitting device used for illumination, can be increased.

Further, the organic light emitting device according to the present invention can improve the light extraction efficiency by including the light extracting layer, and can enhance the durability of the device by suppressing penetration of moisture and air.

Claims (19)

A substrate, an anode, at least one organic material layer, a first cathode including a first metal, and a second cathode including a second metal,
The refractive index (n ₁ ) of the first metal is in the range of the following formula ( ₁ ), the extinction coefficient (k) of the first metal is in a range of 5 or less,
And a light extracting layer between the substrate and the anode,
The first cathode has a structure in contact with the at least one organic layer,
Wherein the first metal and the second metal are different metals from each other.
[Equation 1]

In the above Equation 1, n ₁ is the refractive index of the first metal and k is the extinction coefficient of the first metal. delete delete The organic light emitting diode according to claim 1, wherein the first metal is any one selected from the group consisting of Cu, Au, Li, and Ag. The organic electroluminescent device according to claim 1, wherein the first cathode has a thickness of 1 to 100 nm. The organic light emitting diode according to claim 1, wherein the first cathode has a reflectance of 70% or more with respect to light incident on the front surface. The organic light emitting diode according to claim 1, wherein the thickness of the second cathode is 50 nm to 5 占 퐉. The organic electroluminescent device according to claim 1, wherein the first metal is Li and the second metal is Al. The organic light emitting device according to claim 1, wherein the first metal is Li and the second metal is Ag. The organic light emitting device according to claim 1, wherein the light extracting layer has a structure in which scattering particles are dispersed in a binder, and the binder has a refractive index of 1.7 or more. The light-emitting device according to claim 1,
A scattering layer containing a binder and scattering particles, wherein a scattering layer is formed on a surface opposite to a surface in contact with the substrate, the scattering particles being formed by scattering particles; And
And a flat layer formed on the scattering layer and having a refractive index of 1.7 or more to flatten the surface curvature due to the concavo-convex structure of the scattering layer. The light-emitting device according to claim 1,
A binder layer formed on the substrate and forming a concavo-convex structure; And
And a flat layer formed on the binder layer to form a flat surface and having a refractive index of 1.7 or more. The organic light emitting diode according to claim 1, wherein the organic light emitting element is for illumination. 1) forming a light extraction layer on a substrate;
2) forming an anode and one or more organic layers on the light extracting layer;
3) forming, on the organic material layer, a first cathode including a first metal having a refractive index (n ₁ ) in the range of the following formula ( ₁ ) and an extinction coefficient (k) step; And
4) forming a second cathode comprising a second metal on the first cathode
Lt; / RTI &gt;
The first cathode has a structure in contact with the at least one organic layer,
Wherein the first metal and the second metal are different metals from each other.
[Equation 1]

In the above Equation 1, n ₁ is the refractive index of the first metal and k is the extinction coefficient of the first metal. [Claim 15] The method according to claim 14, wherein the first metal is any one selected from the group consisting of Cu, Au, Li and Ag. [Claim 15] The method of claim 14, wherein the first cathode has a thickness of 1 to 50 nm. [Claim 15] The method of claim 14, wherein the thickness of the second cathode is 50 nm to 5 [mu] m. 15. The method of claim 14, wherein the first metal is Li and the second metal is Al. 15. The method of claim 14, wherein the first metal is Li and the second metal is Ag.

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