CN107871825A - A kind of organic luminescent device and preparation method - Google Patents
A kind of organic luminescent device and preparation method Download PDFInfo
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- CN107871825A CN107871825A CN201711035650.XA CN201711035650A CN107871825A CN 107871825 A CN107871825 A CN 107871825A CN 201711035650 A CN201711035650 A CN 201711035650A CN 107871825 A CN107871825 A CN 107871825A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Optics & Photonics (AREA)
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- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of OLED and preparation method, wherein, the OLED includes substrate and the anode layer, auxiliary metal layer, organic layer and the cathode layer that are successively set on substrate；Wherein, auxiliary metal layer is between anode and organic layer；The auxiliary metal layer is the good inactive metal Au of translucency；The film thickness range of the auxiliary metal layer is 2~10nm；Preferably, the thickness of the auxiliary metal layer is 5nm.The embodiment of the present invention inserts the higher inactive metal Au of light transmission rate between anode and organic layer, enters row buffering between inorganic and organic materials interface, improves the contact interface of inorganic and organic materials, improves the luminous efficiency of device.
Description
Technical field
The present invention relates to the anode in organic luminescent device field, more particularly to machine luminescent device to be modified.
Background technology
Organic Light Emitting Diode (organic light emitting diode, OLED) is with self-luminous, visual angle is wide, sends out
Light efficiency is high, colour gamut is wide and the characteristics such as panel is thin, turns into Display Technique most promising after lcd technology.It is sent out
Light principle be in the presence of electric field, electronics and hole are injected into from negative electrode and anode respectively it is in organic luminous layer and compound,
Exciton is produced, the light emitting molecule in organic luminous layer is stimulated and lighted.
In the prior art, usual OLED includes substrate, the anode layer on substrate, the organic layer on anode
With the cathode layer on organic layer, wherein generally use ITO electrode is as anode, referring to Fig. 1.
Because ITO and the contact interface of organic layer lattice match are poor, cause hole transport to be obstructed, and then reduce device
The luminous efficiency of part.
The content of the invention
The purpose of the present invention is to disclose a kind of organic luminescent device, is solved because of anode and organic layer contact interface lattice
With spend it is poor caused by OLED luminous efficiencies it is not high the problem of；In addition, the invention also provides the preparation method of the OLED.
Technical scheme is used by the present invention solves above-mentioned technical problem：
On the one hand, the embodiments of the invention provide a kind of preparation method of OLED, comprise the following steps：
Substrate covered with anode layer is provided；
Auxiliary metal layer is deposited on the anode layer；
The depositing organic in auxiliary metal layer；
The deposited cathode layer on organic layer.
Wherein, auxiliary metal layer is the good inactive metal Au of translucency, and thickness range is 2~10nm, it is preferred that auxiliary
Metal layer thickness is 5nm；
The organic layer comprises at least organic emission layer；
Further, organic layer also includes hole injection layer, electronic barrier layer, hole transmission layer, electron transfer layer, hole
One or more combination in barrier layer, electron injecting layer.
On the other hand, the embodiments of the invention provide a kind of OLED, the OLED includes substrate and set gradually
Anode layer, auxiliary metal layer, organic layer and cathode layer on substrate.
Wherein, auxiliary metal layer is between anode and organic layer, auxiliary metal layer Au, preferred thickness 5nm；
Organic layer includes hole injection layer, electronic barrier layer, hole transmission layer, organic emission layer, electron transfer layer, hole
Barrier layer, electron injecting layer；
Anode layer includes one kind in tin indium oxide (ITO), indium zinc oxide (IZO).
Brief description of the drawings
Fig. 1 is prior art OLED schematic sectional view；
Fig. 2 is the flow chart for the method that OLED is prepared in embodiment one；
Fig. 3 is the schematic sectional view of the OLED in the embodiment of the present invention two；
Fig. 4 is the schematic sectional view of the OLED in the embodiment of the present invention three.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention is illustrate only in description, accompanying drawing and not all.
Embodiment one
Fig. 2 is the flow chart of the preparation method for the OLED that the embodiment of the present invention one provides.
Substrate of the covering by anode layer (ITO or IZO) step S21, is provided, and anode layer is pre-processed, including it is clear
Wash, grind and etch.
Step S22, on anode layer after the pre-treatment, auxiliary metal layer is deposited.Wherein auxiliary metal layer is that translucency is good
Inactive metal Au, thickness range is 2~10nm, preferably 5nm.
Step S23, the depositing organic in auxiliary metal layer.Wherein, the organic layer can only include organic emission layer, or
Outside organic emission layer, in addition to hole injection layer, electronic barrier layer, hole transmission layer, electron transfer layer, hole blocking layer and electricity
One or more combination in sub- implanted layer.
Step S24, the deposited cathode layer on organic layer.The cathode layer can be silver-colored (Ag), aluminium (Al) or silver-magnesium (Ag-
Mg) alloy, but not limited to this.
Embodiment two
Fig. 3 is the schematic sectional view of the OLED in the embodiment of the present invention two, and reference picture 3, OLED 100 includes substrate
110th, anode layer 120, auxiliary metal layer 130, organic layer 140 and cathode layer 150；Wherein auxiliary metal layer 130, organic layer 140
Sequentially formed successively on the substrate covered with anode layer with cathode layer 150.
Auxiliary metal layer 130 is the good inactive metal Au of translucency between anode layer 120 and organic layer 140, thick
Degree is preferably 5nm.
Anode layer includes one kind in tin indium oxide (ITO), indium zinc oxide (IZO).
Embodiment three
Fig. 4 is the schematic sectional view of the OLED in the embodiment of the present invention three, the OLED of this embodiment except organic layer it
Outside, the OLED being structurally similar in embodiment 1.Therefore, description will focus principally on organic layer below.
Reference picture 4, OLED 100 include substrate 110, anode layer 120, auxiliary metal layer 130, organic layer 140 and the moon
Pole layer 150；Wherein auxiliary metal layer 130, organic layer 140 and cathode layer 150 sequentially form in the base covered with anode layer successively
On plate.
Auxiliary metal layer 130 is the good inactive metal Au of translucency between anode layer 120 and organic layer 140, thick
Degree is preferably 5nm.
Organic layer 140 is in addition to organic emission layer (EL) 144, in addition to hole injection layer (HIL) 141, electronic barrier layer
(EBL) 142, hole transmission layer (HTL) 143, electron transfer layer (ETL) 145, hole blocking layer (HBL) 146 and electron injecting layer
(EIL)147。
Wherein, hole injection layer 141, electronic barrier layer 142, hole transmission layer 143, organic emission layer 144, electric transmission
Layer 145, hole blocking layer 146 and electron injecting layer 147, are deposited in order on anode layer 120 successively.
It should be noted that although illustrate organic layer 140 by hole injection layer 141, electronic barrier layer in this embodiment
142nd, hole transmission layer 143, organic emission layer 144, electron transfer layer 145, hole blocking layer 146 and electron injecting layer 147, according to
Secondary be deposited in order on anode layer 120 is formed, but the invention is not restricted to this, but may be formed in various ways organic layer 140.
For example, organic layer can have a variety of stacked structures, such as hole transmission layer/organic emission layer/electron transfer layer, hole
Implanted layer/hole transmission layer/organic emission layer/electron transfer layer/electron injecting layer, hole injection layer/electronic barrier layer/organic
Emission layer/electron transfer layer/hole blocking layer/electron injecting layer, hole injection layer/electronic barrier layer/hole transmission layer/organic
Emission layer/electron transfer layer etc..
The preparation method and OLED of the OLED provided according to embodiments of the present invention, by anode layer and organic
Ultra-thin metal layer A u is added between layer, solves the OLED caused by anode and organic layer contact interface lattice match are poor
The problem of luminous efficiency is not high.
Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
- A kind of 1. method for preparing OLED, it is characterised in that comprise the following steps：Substrate covered with anode layer is provided；Auxiliary metal layer is deposited on the anode layer；The depositing organic in auxiliary metal layer；The deposited cathode layer on organic layer.
- 2. the method for OLED is prepared as claimed in claim 1, it is characterised in that the auxiliary metal layer is that translucency is good Inactive metal Au.
- 3. the method for OLED is prepared as claimed in claim 2, it is characterised in that the film thickness range of the auxiliary metal layer For 2~10nm.
- 4. the method for OLED is prepared as claimed in claim 2, it is characterised in that the thickness of the auxiliary metal layer is 5nm。
- 5. preparing the method for OLED as claimed in claim 1, the organic layer includes organic emission layer.
- 6. the method for OLED is prepared as claimed in claim 1, it is characterised in that the organic layer also includes hole and injected One or more combination in layer, electronic barrier layer, hole transmission layer, electron transfer layer, hole blocking layer, electron injecting layer.
- A kind of 7. OLED, it is characterised in that the OLED include substrate and be successively set on substrate anode layer, Auxiliary metal layer, organic layer and cathode layer；Wherein, auxiliary metal layer is between anode and organic layer.
- 8. OLED as claimed in claim 7, it is characterised in that the organic layer includes organic emission layer.
- 9. OLED as claimed in claim 7, it is characterised in that the organic layer also includes hole injection layer, electronics hinders One or more combination in barrier, hole transmission layer, electron transfer layer, hole blocking layer, electron injecting layer.
- 10. OLED as claimed in claim 7, it is characterised in that the anode layer includes tin indium oxide (ITO), oxidation One kind in indium zinc (IZO).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711035650.XA CN107871825A (en) | 2017-10-30 | 2017-10-30 | A kind of organic luminescent device and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711035650.XA CN107871825A (en) | 2017-10-30 | 2017-10-30 | A kind of organic luminescent device and preparation method |
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| CN107871825A true CN107871825A (en) | 2018-04-03 |
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| CN201711035650.XA Withdrawn CN107871825A (en) | 2017-10-30 | 2017-10-30 | A kind of organic luminescent device and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111725254A (en) * | 2019-03-19 | 2020-09-29 | 群创光电股份有限公司 | Light emitting device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1468038A (en) * | 2002-06-22 | 2004-01-14 | ����Sdi��ʽ���� | Organic electroluminescent device employing multi-layered anode |
| CN101789494A (en) * | 2009-01-22 | 2010-07-28 | 索尼公司 | Organic electroluminescence device and display unit |
| CN103219472A (en) * | 2013-04-19 | 2013-07-24 | 云南北方奥雷德光电科技股份有限公司 | Top-emitting organic light-emitting diode (OLED) device anode structure and preparation technology thereof |
-
2017
- 2017-10-30 CN CN201711035650.XA patent/CN107871825A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1468038A (en) * | 2002-06-22 | 2004-01-14 | ����Sdi��ʽ���� | Organic electroluminescent device employing multi-layered anode |
| CN101789494A (en) * | 2009-01-22 | 2010-07-28 | 索尼公司 | Organic electroluminescence device and display unit |
| CN103219472A (en) * | 2013-04-19 | 2013-07-24 | 云南北方奥雷德光电科技股份有限公司 | Top-emitting organic light-emitting diode (OLED) device anode structure and preparation technology thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111725254A (en) * | 2019-03-19 | 2020-09-29 | 群创光电股份有限公司 | Light emitting device |
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Application publication date: 20180403 |
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