CN104425752A - Organic light-emitting device and preparation method for same - Google Patents
Organic light-emitting device and preparation method for same Download PDFInfo
- Publication number
- CN104425752A CN104425752A CN201310386244.3A CN201310386244A CN104425752A CN 104425752 A CN104425752 A CN 104425752A CN 201310386244 A CN201310386244 A CN 201310386244A CN 104425752 A CN104425752 A CN 104425752A
- Authority
- CN
- China
- Prior art keywords
- layer
- nitride
- boride
- anode
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
Abstract
The invention discloses an organic light-emitting device. The organic light-emitting device comprises an anode, a luminous layer, a cathode and a packaging cover, which are sequentially laminated, wherein the luminous layer and the cathode are packaged on the anode by virtue of the packaging cover; the packaging cover comprises a silicon carbonitride layer and a barrier layer formed on the surface of the silicon carbonitride layer; a material for the barrier layer comprises nitride and boride; the nitride is at least one of trisilicon tetranitride, aluminum nitride, boron nitride, hafnium nitride, tantalum nitride and titanium nitride; the boride is at least one of aluminum boride, lanthanum hexaboride, vanadium boride, niobium boride, titanium diboride and molybdenum boride. The organic light-emitting device is longer in service life. The invention also provides a preparation method for the organic light-emitting device.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) is a kind of current mode light emitting semiconductor device based on organic material.Its typical structure is that the luminous organic material preparing one deck tens nanometer thickness on ito glass makes luminescent layer, has the metal electrode of one deck low work function above luminescent layer.When electrode being added with voltage, luminescent layer just produces light radiation.
After organic electroluminescence device is subject to moisture and moisture erosion, the material of organic electroluminescence device inner member can be caused to occur aging and then lost efficacy, thus the life-span of described organic electroluminescence device is shorter.
Summary of the invention
Based on this, be necessary organic electroluminescence device providing a kind of life-span longer and preparation method thereof.
A kind of organic electroluminescence device, comprise the anode, luminescent layer and the negative electrode that stack gradually, it is characterized in that: described organic electroluminescence device also comprises cap, described luminescent layer and negative electrode are packaged on described anode by described cap, and described cap comprises carbonitride of silicium layer and is formed at the barrier layer on described carbonitride of silicium layer surface; The material on described barrier layer comprises nitride and boride, described nitride is selected from least one in silicon nitride, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride and titanium nitride, and described boride is selected from least one in aluminium boride, lanthanum hexaboride, vanadium boride, niobium (Nb) boride, titanium diboride and molybdenum boride.
Wherein in an embodiment, the thickness of described carbonitride of silicium layer is 100nm ~ 150nm; The thickness on described barrier layer is 100nm ~ 200nm.
Wherein in an embodiment, the mass percentage of nitride described in described barrier layer is 20% ~ 40%, and all the other are described boride.
Wherein in an embodiment, the quantity of described cap is that 3 ~ 5,3 ~ 5 described caps stack gradually.
Wherein in an embodiment, described cap coordinates with described anode and is formed with host cavity, and described luminescent layer and negative electrode are all contained in described host cavity.
A preparation method for organic electroluminescence device, comprises the following steps:
Luminescent layer is prepared at anode surface;
Negative electrode is prepared on described luminescent layer surface; And
Cap is prepared at described cathode surface, described luminescent layer and negative electrode are packaged on described anode by described cap, described cap comprises carbonitride of silicium layer and is formed at the barrier layer on described carbonitride of silicium layer surface, the material on described barrier layer comprises nitride and boride, described nitride is selected from least one in silicon nitride, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride and titanium nitride, and described boride is selected from least one in aluminium boride, lanthanum hexaboride, vanadium boride, niobium (Nb) boride, titanium diboride and molybdenum boride.
Wherein in an embodiment, the thickness of described carbonitride of silicium layer is 100nm ~ 150nm; The thickness on described barrier layer is 100nm ~ 200nm.
Wherein in an embodiment, the mass percentage of nitride described in described barrier layer is 20% ~ 40%, and all the other are described boride.
Wherein in an embodiment, the quantity of described cap is that 3 ~ 5,3 ~ 5 described caps stack gradually.
Wherein in an embodiment, described carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique preparation, unstrpped gas is methyl-monosilane, ammonia and hydrogen, the flow-rate ratio of wherein said methyl-monosilane and described hydrogen is (4 ~ 10): (190 ~ 210), the flow-rate ratio of described ammonia and described methyl-monosilane is 20:1 ~ 30:1, temperature is 40 ~ 60 DEG C, and air pressure is 30 ~ 60Pa, and power is 0.1 ~ 0.5W/cm
2.
Above-mentioned organic electroluminescence device and preparation method thereof, cap comprises carbonitride of silicium layer and is formed at the barrier layer on carbonitride of silicium layer surface, two-layer cooperation compactness is high, can the effectively luminescent layer of material to organic electroluminescence device and the corrosion of negative electrode such as block water oxygen, improve water oxygen resistant ability, thus the life-span of organic electroluminescence device is longer.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device of an embodiment;
Fig. 2 is the flow chart of the preparation method of the organic electroluminescent of an embodiment.
Embodiment
Below in conjunction with the drawings and specific embodiments, organic electroluminescence device and preparation method thereof is illustrated further.
Refer to Fig. 1, the organic electroluminescence device 100 of an execution mode comprises the anode 10 with anode pattern, functional layer 20, negative electrode 30 and the cap 40 that stack gradually.
Anode 10 is electro-conductive glass or organic PETG (PET) film substrate that conducts electricity.Anode 10 has the ITO layer that preparation has anode pattern.In present embodiment, the thickness of ITO layer is 100nm.The thickness of certain ITO layer is not limited to 100nm, also can select other thickness as required.
Functional layer 20 is formed at anode 10 surface.Functional layer 20 comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, the electron injecting layer that stack gradually.Be appreciated that hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer can omit, now functional layer 20 only comprises luminescent layer.
In present embodiment, the material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3).CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.
It should be noted that, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer also can adopt other materials as required.The thickness of hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer also can adjust as required.
Negative electrode 30 is formed at functional layer 20 surface.The thickness of negative electrode is 100nm.The material of negative electrode 30 is aluminium (Al).
Cap 40 is formed at the surface of negative electrode 30.In present embodiment, cap 40 covers at functional layer 20 and negative electrode 30, and the edge of cap 40 and anode 10 affixed, thus functional layer 20 and negative electrode 30 to be encapsulated on anode 10.Cap 40 is formed with host cavity.Host cavity is the groove of the surface indentation from cap 40.Functional layer 20 and negative electrode 30 are contained in host cavity by cap 40.
Cap 40 comprises the carbonitride of silicium layer 41 and barrier layer 42 that stack gradually.
Carbonitride of silicium layer 41 is formed at the surface of negative electrode 30, and the part surface of the end face of covered cathode 30 and functional layer 20 and anode 10, thus functional layer 20 and negative electrode 30 are encapsulated on anode 10.The material of carbonitride of silicium layer 41 is SiC
xn
y, the effect intercepting water oxygen can be played.The thickness of carbonitride of silicium layer 41 is 100nm ~ 150nm.
Barrier layer 42 is formed at the surface of carbonitride of silicium layer 41.The material on barrier layer 42 comprises nitride and boride.Nitride is selected from silicon nitride (Si
3n
4), at least one in aluminium nitride (AlN), boron nitride (BN), hafnium nitride (HfN), tantalum nitride (TaN) and titanium nitride (TiN).Boride is selected from aluminium boride (AlB
2), lanthanum hexaboride (LaB
6), vanadium boride (VB
2), niobium (Nb) boride (NbB), titanium diboride (TiB
2) and molybdenum boride (MoB) at least one.The thickness on barrier layer 42 is 100nm ~ 200nm.
Further, in barrier layer 42, the mass percentage of nitride is 20% ~ 40%, and all the other are boride.
Preferably, the quantity of cap 40 is that 3 ~ 5,3 ~ 5 caps 40 stack gradually.Namely 3 ~ 5 caps 40 all cover at functional layer 20 and negative electrode 30, and the cap 40 being positioned at outside covers on the cap 40 inside being positioned at, thus multiple cap 40 forms following stepped construction: carbonitride of silicium layer 41/ barrier layer, carbonitride of silicium layer 41/ barrier layer 42/ 42/ ... / carbonitride of silicium layer 41/ barrier layer 42.
In above-mentioned organic electroluminescence device 100, cap 40 comprises the carbonitride of silicium layer 41 and barrier layer 42 that stack gradually, two-layer cooperation compactness is high, can the corrosion of effective block water oxygen, cap 40 is encapsulated in functional layer 20 and negative electrode 30 on anode 10, effectively can improve water oxygen resistant ability, thus the life-span of organic electroluminescence device 100 is longer.
Be appreciated that the host cavity of cap 40 can omit, now direct host cavity be set on anode 10.
Please refer to Fig. 2, the preparation method of the organic electroluminescence device 100 of an execution mode, it comprises the following steps:
Step S110, on anode 10, form functional layer 20.
Functional layer 20 comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, the electron injecting layer that stack gradually.
Anode 10 can be electro-conductive glass substrate or organic PETG (PET) film substrate that conducts electricity.Anode 10 has the ITO layer that preparation has anode pattern.In present embodiment, the thickness of ITO layer is 100nm.The thickness of certain ITO layer is not limited to 100nm, also can select other thickness as required.
Anode 10 surface formation functional layer 20 before first carry out preliminary treatment to remove the pollutant on substrate 10 surface, and carry out surface active increase anode 10 surface oxygen content to improve the work function on anode 10 surface.Be specially, adopted successively by anode 10 and remove each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
In present embodiment, the material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
It should be noted that, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer also can adopt other materials as required.Hole injection layer, hole transmission layer, electron transfer layer, electron injecting layer can omit, and now functional layer 20 only comprises luminescent layer.
Step S120, functional layer 20 surface formed negative electrode 30.
The material of negative electrode 30 is aluminium (Al).The thickness of negative electrode 30 is 100nm.Negative electrode 30 is formed by vacuum evaporation, and vacuum degree is 5 × 10
-5pa, evaporation rate is
Step S130, prepare cap 40 on negative electrode 30 surface.
Cap 40 is formed at the surface of negative electrode 30.In present embodiment, cap 40 covers at functional layer 20 and negative electrode 30, and the edge of cap 40 and anode 10 affixed, thus functional layer 20 and negative electrode 30 to be encapsulated on anode 10.Cap 40 is formed with host cavity.Host cavity is the groove of the surface indentation from cap 40.Functional layer 20 and negative electrode 30 are contained in host cavity by cap 40.
Cap 40 comprises the carbonitride of silicium layer 41 and barrier layer 42 that stack gradually.
Carbonitride of silicium layer 41 is formed at the surface of negative electrode 30, and the part surface of the end face of covered cathode 30 and functional layer 20 and anode 10, thus functional layer 20 and negative electrode 30 are encapsulated on anode 10.
The material of carbonitride of silicium layer 41 is SiC
xn
y, the effect intercepting water oxygen can be played.The thickness of carbonitride of silicium layer 41 is 100nm ~ 150nm.
In present embodiment, carbonitride of silicium layer 41 using plasma strengthens chemical vapour deposition technique (PECVD) preparation.Unstrpped gas is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2).The flow-rate ratio of methyl-monosilane and hydrogen is (4 ~ 10): (190 ~ 210), and the flow-rate ratio of ammonia and methyl-monosilane is 20:1 ~ 30:1.Temperature is 40 ~ 60 DEG C, and air pressure is 30 ~ 60Pa, and power is 0.1 ~ 0.5W/cm
2.Specifically in the present embodiment, H
2flow be the flow 4 ~ 10sccm of 190 ~ 210sccm, MMS.
The structural formula of MMS is:
Barrier layer 42 is formed at the surface of carbonitride of silicium layer 41.The material on barrier layer 42 comprises nitride and boride.Nitride is selected from silicon nitride (Si
3n
4), at least one in aluminium nitride (AlN), boron nitride (BN), hafnium nitride (HfN), tantalum nitride (TaN) and titanium nitride (TiN).Boride is selected from aluminium boride (AlB
2), lanthanum hexaboride (LaB
6), vanadium boride (VB
2), niobium (Nb) boride (NbB), titanium diboride (TiB
2) and molybdenum boride (MoB) at least one.The thickness on barrier layer 42 is 100nm ~ 200nm.
Further, in barrier layer 42, the mass percentage of nitride is 20% ~ 40%, and all the other are boride.
Barrier layer 42 is prepared by magnetron sputtering, and background vacuum is 1 × 10
-5pa ~ 1 × 10
-3pa.
Preferably, the quantity of cap 40 is that 3 ~ 5,3 ~ 5 caps 40 stack gradually.Namely 3 ~ 5 caps 40 all cover at functional layer 20 and negative electrode 30, and the cap 40 being positioned at outside covers on the cap 40 inside being positioned at, thus multiple cap 40 forms following stepped construction: carbonitride of silicium layer 41/ barrier layer, carbonitride of silicium layer 41/ barrier layer 42/ 42/ ... / carbonitride of silicium layer 41/ barrier layer 42.
Be appreciated that the host cavity of cap 40 can omit, now direct host cavity be set on anode 10.
The preparation method of above-mentioned organic electroluminescence device, preparation technology is simple, easily preparation in enormous quantities.
Below in conjunction with specific embodiment, organic electroluminescence device preparation method provided by the invention is described in detail.
Embodiment 1
The present embodiment prepares structure: ITO/NPB:MoO
3/ TCTA/TPBI:Ir (ppy)
3/ Bphen/Bphen:CsN
3the organic electroluminescence device of/Al/ cap; Wherein, brace "/" represents layer structure, and colon ": " represents doping, lower same.
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
1, on anode, functional layer is formed.
Anode 10 is electro-conductive glass.Anode 10 has the ITO layer that preparation has anode pattern.The thickness of ITO layer is 100nm.
Anode 10 surface formation functional layer 20 before first carry out preliminary treatment to remove the pollutant on substrate 10 surface, and carry out surface active increase anode 10 surface oxygen content to improve the work function on anode 10 surface.Be specially, adopted successively by anode 10 and remove each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
The material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
2, negative electrode is formed on functional layer surface.
The material of negative electrode is aluminium.The thickness of negative electrode is 100nm.Negative electrode is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
3, cap is prepared at cathode surface.
Cap is formed at the surface of negative electrode, and the end face of covered cathode and functional layer and the part surface of anode, thus functional layer and negative electrode are encapsulated on anode.
Cap comprises the carbonitride of silicium layer and barrier layer that stack gradually.
Carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique (PECVD) preparation.Unstrpped gas is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), H
2flow 200sccm, MMS flow 7sccm, NH
3be 25:1 with the flow-rate ratio of MMS, temperature 60 C, air pressure 50Pa, power 0.2W/cm
2.The thickness 150nm of carbonitride of silicium layer;
Barrier layer is prepared by magnetron sputtering, and material comprises AlB
2and Si
3n
4, Si
3n
4mass percentage be 30%, all the other are AlB
2, background vacuum 1 × 10
-5pa, thickness 180nm;
The quantity of cap is that 5,5 caps stack gradually.The structure of cap is (SiC
xn
y/ AlB
2: Si
3n
4)
5, wherein, "/" represents separation between layers, and colon ": " represents at least bi-material doping or mixing, lower same.
Embodiment 2
The present embodiment prepares structure: ITO/NPB:MoO
3/ TCTA/TPBI:Ir (ppy)
3/ Bphen/Bphen:CsN
3the organic electroluminescence device of/Al/ cap.
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
1, on anode, functional layer is formed.
Anode 10 is electro-conductive glass.Anode 10 has the ITO layer that preparation has anode pattern.The thickness of ITO layer is 100nm.
Anode 10 surface formation functional layer 20 before first carry out preliminary treatment to remove the pollutant on substrate 10 surface, and carry out surface active increase anode 10 surface oxygen content to improve the work function on anode 10 surface.Be specially, adopted successively by anode 10 and remove each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
The material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
2, negative electrode is formed on functional layer surface.
The material of negative electrode is aluminium.The thickness of negative electrode is 100nm.Negative electrode is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
3, cap is prepared at cathode surface.
Cap is formed at the surface of negative electrode, and the end face of covered cathode and functional layer and the part surface of anode, thus functional layer and negative electrode are encapsulated on anode.
Cap comprises the carbonitride of silicium layer and barrier layer that stack gradually.
Carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique (PECVD) preparation.Unstrpped gas is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), H
2flow 205sccm, MMS flow 8sccm, NH
3be 24:1 with the flow-rate ratio of MMS, temperature 50 C, air pressure 50Pa, power 0.2W/cm
2.The thickness 140nm of carbonitride of silicium layer;
Barrier layer is prepared by magnetron sputtering, and material comprises LaB
6and the mass percentage of AlN, AlN is 40%, all the other are LaB
6, background vacuum 1 × 10
-5pa, thickness 200nm;
The quantity of cap is that 4,4 caps stack gradually.The structure of cap is (SiC
xn
y/ LaB
6: AlN)
4.
Embodiment 3
The present embodiment prepares structure: ITO/NPB:MoO
3/ TCTA/TPBI:Ir (ppy)
3/ Bphen/Bphen:CsN
3the organic electroluminescence device of/Al/ cap.
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
1, on anode, functional layer is formed.
Anode 10 is electro-conductive glass.Anode 10 has the ITO layer that preparation has anode pattern.The thickness of ITO layer is 100nm.
Anode 10 surface formation functional layer 20 before first carry out preliminary treatment to remove the pollutant on substrate 10 surface, and carry out surface active increase anode 10 surface oxygen content to improve the work function on anode 10 surface.Be specially, adopted successively by anode 10 and remove each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
The material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
2, negative electrode is formed on functional layer surface.
The material of negative electrode is aluminium.The thickness of negative electrode is 100nm.Negative electrode is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
3, cap is prepared at cathode surface.
Cap is formed at the surface of negative electrode, and the end face of covered cathode and functional layer and the part surface of anode, thus functional layer and negative electrode are encapsulated on anode.
Cap comprises the carbonitride of silicium layer and barrier layer that stack gradually.
Carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique (PECVD) preparation.Unstrpped gas is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), H
2flow 210sccm, MMS flow 6sccm, NH
3be 21:1 with the flow-rate ratio of MMS, temperature 50 C, air pressure 60Pa, power 0.5W/cm
2.The thickness 140nm of carbonitride of silicium layer;
Barrier layer is prepared by magnetron sputtering, and material comprises VB
2and the mass percentage of BN, BN is 20%, all the other are VB
2, background vacuum 1 × 10
-5pa, thickness 100nm;
The quantity of cap is that 3,3 caps stack gradually.The structure of cap is (SiC
xn
y/ VB
2: BN)
3.
Embodiment 4
The present embodiment prepares structure: ITO/NPB:MoO
3/ TCTA/TPBI:Ir (ppy)
3/ Bphen/Bphen:CsN
3the organic electroluminescence device of/Al/ cap.
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
1, on anode, functional layer is formed.
Anode 10 is electro-conductive glass.Anode 10 has the ITO layer that preparation has anode pattern.The thickness of ITO layer is 150nm.
Anode 10 surface formation functional layer 20 before first carry out preliminary treatment to remove the pollutant on substrate 10 surface, and carry out surface active increase anode 10 surface oxygen content to improve the work function on anode 10 surface.Be specially, adopted successively by anode 10 and remove each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
The material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
2, negative electrode is formed on functional layer surface.
The material of negative electrode is aluminium.The thickness of negative electrode is 100nm.Negative electrode is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
3, cap is prepared at cathode surface.
Cap is formed at the surface of negative electrode, and the end face of covered cathode and functional layer and the part surface of anode, thus functional layer and negative electrode are encapsulated on anode.
Cap comprises the carbonitride of silicium layer and barrier layer that stack gradually.
Carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique (PECVD) preparation.Unstrpped gas is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), H
2flow 190sccm, MMS flow 10sccm, NH
3be 20:1 with the flow-rate ratio of MMS, temperature 40 DEG C, air pressure 30Pa, power 0.1W/cm
2.The thickness 130nm of carbonitride of silicium layer;
Barrier layer is prepared by magnetron sputtering, and material comprises NbB and HfN, and the mass percentage of HfN is 20%, and all the other are NbB, background vacuum 5 × 10
-5pa, thickness 170nm;
The quantity of cap is that 3,3 caps stack gradually.The structure of cap is (SiC
xn
y/ NbB:HfN)
3.
Embodiment 5
The present embodiment prepares structure: ITO/NPB:MoO
3/ TCTA/TPBI:Ir (ppy)
3/ Bphen/Bphen:CsN
3the organic electroluminescence device of/Al/ cap.
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
1, on anode, functional layer is formed.
Anode 10 is electro-conductive glass.Anode 10 has the ITO layer that preparation has anode pattern.The thickness of ITO layer is 120nm.
Anode 10 surface formation functional layer 20 before first carry out preliminary treatment to remove the pollutant on substrate 10 surface, and carry out surface active increase anode 10 surface oxygen content to improve the work function on anode 10 surface.Be specially, adopted successively by anode 10 and remove each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
The material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
2, negative electrode is formed on functional layer surface.
The material of negative electrode is aluminium.The thickness of negative electrode is 100nm.Negative electrode is formed by vacuum evaporation, and vacuum degree is 5 × 10
-5pa, evaporation rate is
3, cap is prepared at cathode surface.
Cap is formed at the surface of negative electrode, and the end face of covered cathode and functional layer and the part surface of anode, thus functional layer and negative electrode are encapsulated on anode.
Cap comprises the carbonitride of silicium layer and barrier layer that stack gradually.
Carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique (PECVD) preparation.Unstrpped gas is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), H
2flow 190sccm, MMS flow 4sccm, NH
3be 30:1 with the flow-rate ratio of MMS, temperature 45 C, air pressure 40Pa, power 0.3W/cm
2.The thickness 100nm of carbonitride of silicium layer;
Barrier layer is prepared by magnetron sputtering, and material comprises TiB
2and the mass percentage of TaN, TaN is 30%, all the other are TiB
2, background vacuum 5 × 10
-5pa, thickness 160nm;
The quantity of cap is that 3,3 caps stack gradually.The structure of cap is (SiC
xn
y/ TiB
2: TaN)
3.
Embodiment 6
The present embodiment prepares structure: ITO/NPB:MoO
3/ TCTA/TPBI:Ir (ppy)
3/ Bphen/Bphen:CsN
3the organic electroluminescence device of/Al/ cap.
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
1, on anode, functional layer is formed.
Anode 10 is electro-conductive glass.Anode 10 has the ITO layer that preparation has anode pattern.The thickness of ITO layer is 100nm.
Anode 10 surface formation functional layer 20 before first carry out preliminary treatment to remove the pollutant on substrate 10 surface, and carry out surface active increase anode 10 surface oxygen content to improve the work function on anode 10 surface.Be specially, adopted successively by anode 10 and remove each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
The material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
2, negative electrode is formed on functional layer surface.
The material of negative electrode is aluminium.The thickness of negative electrode is 100nm.Negative electrode is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
3, cap is prepared at cathode surface.
Cap is formed at the surface of negative electrode, and the end face of covered cathode and functional layer and the part surface of anode, thus functional layer and negative electrode are encapsulated on anode.
Cap comprises the carbonitride of silicium layer and barrier layer that stack gradually.
Carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique (PECVD) preparation.Unstrpped gas is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), H
2flow 190sccm, MMS flow 5sccm, NH
3be 20:1 with the flow-rate ratio of MMS, temperature 45 C, air pressure 40Pa, power 0.3W/cm
2.The thickness 110nm of carbonitride of silicium layer;
Barrier layer is prepared by magnetron sputtering, and material comprises MoB and TiN, and the mass percentage of TiN is 30%, and all the other are MoB, background vacuum 1 × 10
-3pa, thickness 150nm;
The quantity of cap is that 3,3 caps stack gradually.The structure of cap is (SiC
xn
y/ MoB:TiN)
3.
Comparative example
The present embodiment prepares structure: ITO/NPB:MoO
3/ TCTA/TPBI:Ir (ppy)
3/ Bphen/Bphen:CsN
3the organic electroluminescence device of/Al/ cap.
The preparation method of above-mentioned organic electroluminescence device, comprises the following steps:
1, on anode, functional layer is formed.
Anode 10 is electro-conductive glass.Anode 10 has the ITO layer that preparation has anode pattern.The thickness of ITO layer is 100nm.
Anode 10 surface formation functional layer 20 before first carry out preliminary treatment to remove the pollutant on substrate 10 surface, and carry out surface active increase anode 10 surface oxygen content to improve the work function on anode 10 surface.Be specially, adopted successively by anode 10 and remove each Ultrasonic Cleaning 5min of acetone, ethanol, ionized water and ethanol, dry up afterwards with nitrogen, baking box is dried.
The material of hole injection layer comprises N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4-4 '-diamines (NPB) and the molybdenum oxide (MoO be entrained in NPB
3).MoO
3mass percentage be 30%.The thickness of hole injection layer is 10nm.Hole injection layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of hole transmission layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA).The thickness of hole transmission layer is 30nm.Hole transmission layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of luminescent layer comprises material of main part and is entrained in the guest materials in material of main part.Material of main part is 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), and guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy)
3).The mass percentage of guest materials is 5%.The thickness of luminescent layer is 20nm.Luminescent layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).The thickness of electron transfer layer is 10nm.Electron transfer layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
The material of electron injecting layer comprises Bphen and is entrained in the nitrine caesium (CsN in Bphen
3), CsN
3mass percentage be 30%.The thickness of electron injecting layer is 20nm.Electron injecting layer is formed by vacuum evaporation, and vacuum degree is 3 × 10
-5pa, evaporation rate is
2, negative electrode is formed on functional layer surface.
The material of negative electrode is aluminium.The thickness of negative electrode is 100nm.Negative electrode is formed by vacuum evaporation, and vacuum degree is 5 × 10
-5pa, evaporation rate is
3, cap is prepared at cathode surface.
Cap is formed at the surface of negative electrode, and the end face of covered cathode and functional layer and the part surface of anode, thus functional layer and negative electrode are encapsulated on anode.
Cap comprises the carbonitride of silicium layer and barrier layer that stack gradually.
Carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique (PECVD) preparation.Unstrpped gas is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), H
2flow 190sccm, MMS flow 5sccm, NH
3be 20:1 with the flow-rate ratio of MMS, temperature 45 C, air pressure 40Pa, power 0.3W/cm
2.The thickness 110nm of carbonitride of silicium layer;
Barrier layer is prepared by magnetron sputtering, and material is MoB, background vacuum 1 × 10
-3pa, thickness 150nm.
The quantity of cap is that 3,3 caps stack gradually.The structure of cap is (SiC
xn
y/ MoB)
3.
The embodiment of the present invention and the preparation used by comparative example and tester are: high vacuum coating equipment (scientific instrument development center, Shenyang Co., Ltd, pressure <1 × 10-3Pa), magnetron sputtering apparatus (scientific instrument development center, Shenyang Co., Ltd), current-voltage tester (Keithly company of the U.S., 2400), color luminance meter (Konica Minolta, model: CS-100A) model:.
Refer to table 1, table 1 is depicted as the test result of the aqueous vapor penetrance (Water Vapor Transmission Rate) of organic electroluminescence device prepared by embodiment 1 ~ embodiment 6 and comparative example.The aqueous vapor penetrance of the organic electroluminescence device of embodiment 1 ~ embodiment 6 preparation is all less than 10 as can be seen from Table 1
-5g/m
2/ day, much smaller than the aqueous vapor penetrance (10 of organic electroluminescence device prepared by comparative example
-3g/m
2/ day) waterproof effect is better, and effectively can reduce the erosion of outside aqueous vapor to organic electroluminescence device, thus improve the life-span of organic electroluminescence device.
Table 1
| WVTR(g/m 2/day) | |
| Embodiment 1 | 2.6×10 -5 |
| Embodiment 2 | 3.1×10 -5 |
| Embodiment 3 | 3.4×10 -5 |
| Embodiment 4 | 4.0×10 -5 |
| Embodiment 5 | 4.3×10 -5 |
| Embodiment 6 | 4.7×10 -5 |
| Comparative example | 2.5×10 -3 |
Refer to table 2, it is 1000cd/m at original intensity that table 2 is depicted as organic electroluminescence device prepared by embodiment 1 ~ embodiment 6 and comparative example
2condition under life-span (brightness is reduced to original intensity 70% time used).
Table 2
As can be seen from Table 2, the starting brightness of the organic electroluminescence device of embodiment 1 ~ embodiment 6 preparation is 1000cd/m
2time, the life-span reaches more than 12300 hours, and the life-span is longer.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. an organic electroluminescence device, comprise the anode, luminescent layer and the negative electrode that stack gradually, it is characterized in that: described organic electroluminescence device also comprises cap, described luminescent layer and negative electrode are packaged on described anode by described cap, and described cap comprises carbonitride of silicium layer and is formed at the barrier layer on described carbonitride of silicium layer surface; The material on described barrier layer comprises nitride and boride, described nitride is selected from least one in silicon nitride, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride and titanium nitride, and described boride is selected from least one in aluminium boride, lanthanum hexaboride, vanadium boride, niobium (Nb) boride, titanium diboride and molybdenum boride.
2. organic electroluminescence device according to claim 1, is characterized in that, the thickness of described carbonitride of silicium layer is 100nm ~ 150nm; The thickness on described barrier layer is 100nm ~ 200nm.
3. organic electroluminescence device according to claim 1, is characterized in that, the mass percentage of nitride described in described barrier layer is 20% ~ 40%, and all the other are described boride.
4. organic electroluminescence device according to claim 1, is characterized in that, the quantity of described cap is that 3 ~ 5,3 ~ 5 described caps stack gradually.
5. organic electroluminescence device according to claim 1, is characterized in that, described cap coordinates with described anode and is formed with host cavity, and described luminescent layer and negative electrode are all contained in described host cavity.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Luminescent layer is prepared at anode surface;
Negative electrode is prepared on described luminescent layer surface; And
Cap is prepared at described cathode surface, described luminescent layer and negative electrode are packaged on described anode by described cap, described cap comprises carbonitride of silicium layer and is formed at the barrier layer on described carbonitride of silicium layer surface, the material on described barrier layer comprises nitride and boride, described nitride is selected from least one in silicon nitride, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride and titanium nitride, and described boride is selected from least one in aluminium boride, lanthanum hexaboride, vanadium boride, niobium (Nb) boride, titanium diboride and molybdenum boride.
7. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, the thickness of described carbonitride of silicium layer is 100nm ~ 150nm; The thickness on described barrier layer is 100nm ~ 200nm.
8. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, the mass percentage of nitride described in described barrier layer is 20% ~ 40%, and all the other are described boride.
9. the preparation method of organic electroluminescence device according to claim 6, is characterized in that: the quantity of described cap is that 3 ~ 5,3 ~ 5 described caps stack gradually.
10. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that: described carbonitride of silicium layer using plasma strengthens chemical vapour deposition technique preparation, unstrpped gas is methyl-monosilane, ammonia and hydrogen, the flow-rate ratio of wherein said methyl-monosilane and described hydrogen is (4 ~ 10): (190 ~ 210), the flow-rate ratio of described ammonia and described methyl-monosilane is 20:1 ~ 30:1, temperature is 40 ~ 60 DEG C, and air pressure is 30 ~ 60Pa, and power is 0.1 ~ 0.5W/cm
2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310386244.3A CN104425752A (en) | 2013-08-29 | 2013-08-29 | Organic light-emitting device and preparation method for same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310386244.3A CN104425752A (en) | 2013-08-29 | 2013-08-29 | Organic light-emitting device and preparation method for same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104425752A true CN104425752A (en) | 2015-03-18 |
Family
ID=52974176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310386244.3A Pending CN104425752A (en) | 2013-08-29 | 2013-08-29 | Organic light-emitting device and preparation method for same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104425752A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346746A (en) * | 2017-01-22 | 2018-07-31 | 昆山工研院新型平板显示技术中心有限公司 | Organic electroluminescence device and its manufacturing method, display device |
-
2013
- 2013-08-29 CN CN201310386244.3A patent/CN104425752A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346746A (en) * | 2017-01-22 | 2018-07-31 | 昆山工研院新型平板显示技术中心有限公司 | Organic electroluminescence device and its manufacturing method, display device |
| CN108346746B (en) * | 2017-01-22 | 2019-10-25 | 昆山工研院新型平板显示技术中心有限公司 | Organic electroluminescence device and its manufacturing method, display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015515088A (en) | Electronic module with moisture barrier layer | |
| CN104425754A (en) | Organic light-emitting device and preparation method for same | |
| CN104425752A (en) | Organic light-emitting device and preparation method for same | |
| CN105762294A (en) | Iridium-complex-utilized white organic light-emitting device and preparation method thereof | |
| CN103545448A (en) | Organic electroluminescent device and preparation method | |
| CN104103764A (en) | Organic light-emitting display and manufacturing method thereof | |
| CN105789460A (en) | White organic light emitting diode adopting exciplex and fabrication method for white organic light emitting diode | |
| CN104103768A (en) | Organic light-emitting display and manufacturing method thereof | |
| CN104425755A (en) | Organic light-emitting device and preparation method for same | |
| CN104425753A (en) | Organic light-emitting device and preparation method for same | |
| Gui-ying et al. | White organic light-emitting devices based on novel (E)-2-(4-(diphenylamino) styryl) quinolato zinc as a hole-transporting emitter | |
| CN104078579A (en) | Organic light-emitting diode and preparation method thereof | |
| CN104078580A (en) | Organic light-emitting diode and preparation method thereof | |
| CN104078606A (en) | Organic light-emitting diode and preparation method thereof | |
| CN103545453A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103904249B (en) | Organic electroluminescence device and preparation method thereof | |
| CN104103763A (en) | Organic light-emitting display and manufacturing method thereof | |
| CN103904243B (en) | Organic electroluminescence device and preparation method thereof | |
| CN103427039A (en) | Organic electroluminescent device and production method thereof | |
| CN103904242A (en) | Organic electroluminescent device and preparing method thereof | |
| CN104425756A (en) | Organic light-emitting device and preparation method for same | |
| CN104103767A (en) | Organic light-emitting display and preparation method thereof | |
| CN104078615A (en) | Organic light-emitting diode and preparation method thereof | |
| Wang et al. | Organic Light Emitting Devices with Nano-ZnO Thin Films as Cathode Buffer Layer | |
| CN104078607A (en) | Organic light-emitting diode device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150318 |
|
| WD01 | Invention patent application deemed withdrawn after publication |