CN112928188A - Light emitting diode, photoelectric module and display device - Google Patents
Light emitting diode, photoelectric module and display device Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention relates to the technical field of light emitting diode manufacturing, in particular to a light emitting diode, a photoelectric module and a display device, wherein the light emitting diode comprises a substrate and an epitaxial structure, and comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked; a first electrode and a second electrode respectively positioned on the first semiconductor layer and the second semiconductor layer; the first electrode comprises a first pad electrode and an extended first contact electrode, and the second electrode comprises a second pad electrode; the projection shortest distance between the first contact electrode and the second pad electrode on the vertical surface is greater than zero. According to the invention, the shortest projection distance between the first contact electrode and the second pad electrode on the vertical surface is controlled, so that the problem that the chip fails due to conduction and electric leakage of different electrodes caused by solder paste infiltration is solved.
Description
Technical Field
The invention relates to the technical field of light emitting diode manufacturing, in particular to a light emitting diode, a photovoltaic module and a display device.
Background
Light Emitting Diodes (LEDs) have the advantages of low cost, high lighting efficiency, energy saving, environmental protection, and the like, and are widely used in lighting, visible Light communication, Light Emitting display, and other scenes. The LED chip is divided into a forward mounting structure, an inverted mounting structure and a vertical structure. Compared with the traditional forward chip, the flip chip has the advantages of high current, reliability, simplicity and convenience in use and the like, and is applied in a large scale at present.
At present, a part of flip-chip LEDs includes a substrate, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a current spreading layer, a P-type contact layer, a DBR reflective layer, and a P-pad electrode, which are sequentially stacked, wherein the N-type GaN layer and the P-type GaN layer are disposed on the same side of the substrate, the N-type contact layer and the N-type pad electrode are further disposed on the N-type GaN layer, and the N-type pad electrode and the P-type pad electrode are formed on the DBR reflective layer.
In order to enhance current spreading and reduce voltage, it is generally necessary to provide finger-like N-type electrodes and/or P-type electrodes extending from the N-pad electrodes and the P-pad electrodes, respectively. At present, in the actual structure manufacturing process of a long chip, an N-finger electrode (contact electrode) of an N electrode often covers under a P-pad electrode to form a three-layer overlapping structure of the P-pad electrode/an insulating layer/the N contact electrode. In this case, the quality of the film layer is very important, and the insulating layer plays a key role in high-temperature aging and high-temperature high-humidity aging because the insulating layer plays a role of an insulating layer. If the insulating layer is not covered well, after the die is die-bonded, solder paste easily penetrates from the position (fracture position) with poor covering (as shown in fig. 1), so that the P pad electrode and the N contact electrode are conducted and leaked, and the chip is failed.
Disclosure of Invention
In order to solve the problem mentioned in the background art that the solder paste is easy to penetrate from the poor coverage position (fracture position) to cause conduction and leakage between different electrodes, thereby causing chip failure, the invention provides a light emitting diode, comprising:
the epitaxial structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked, and is provided with one or more electrode table tops, wherein each electrode table top is provided with an inclined plane penetrating through the second semiconductor layer and the light-emitting layer, and a plane area exposing part of the first semiconductor layer;
a first electrode, located on the first semiconductor layer, electrically connected to the first semiconductor layer, and including at least a first pad electrode and a first contact electrode, wherein the first contact electrode is located in the planar region of the electrode mesa and forms an ohmic contact with the first semiconductor layer;
a second electrode over the second semiconductor layer, electrically connected to the second semiconductor layer, the second electrode including at least a second pad electrode;
the insulating layer is positioned on the second semiconductor layer and covers the inclined plane of the electrode table top, the first contact electrode is provided with at least two through holes, and the first pad electrode and the second pad electrode are formed on the insulating layer and are electrically connected with the first contact electrode and the second semiconductor layer through the through holes respectively;
the projection shortest distance between the first contact electrode and the second pad electrode on the vertical surface is greater than zero.
In addition to the above technical solution, preferably, the first contact electrode extends from the first pad electrode toward the second pad electrode, and a shortest distance between the first contact electrode and the second pad electrode is 5 to 50 μm.
On the basis of the above technical solution, preferably, the light emitting diode is a rectangular chip with a length greater than or equal to 15mil, and the distance between the first pad electrode and the second pad electrode is 60 to 300 μm.
On the basis of the above technical solution, preferably, the first contact electrode includes a strip structure, and the strip structure is located in an edge region of the epitaxial structure.
On the basis of the above technical solution, preferably, the volume of the first contact electrode is 540 μm3～6480μm3。
On the basis of the technical scheme, the length of the first contact electrode is preferably 1/5-2/5 of the length of the light-emitting diode body.
On the basis of the above technical solution, preferably, a projection shortest distance between the electrode mesa and the second pad electrode on the vertical plane is greater than zero.
On the basis of the above technical solution, preferably, the insulating layer at least includes SiO2Layer, Si3N4Layer of Al2O3One or a combination of layers, AlN layers, DBR layers.
In addition to the above technical solution, preferably, the second electrode further includes a second contact electrode located between the second semiconductor layer and the insulating layer and extending in a direction of the first pad electrode.
On the basis of the above technical solution, preferably, the second contact electrode at least includes a first electrode segment and a second electrode segment, wherein a bending point of the first electrode segment is located at a position of 0 to 1/3 sides of a short side width of the light emitting diode body, and a terminal of the second contact electrode is located at a position of 1/3 to 2/3 sides of the short side width of the light emitting diode body. .
On the basis of the above technical solution, preferably, the second contact electrode includes at least a first electrode segment and a second electrode segment, wherein the first electrode segment is located at a position 0 to 1/3 side lengths of the short side width of the light emitting diode body, the second electrode segment is connected to the first electrode segment and extends toward the first pad electrode, and the second electrode segment occupies 1/3 to 1/2 of the length of the light emitting diode body as the second contact electrode.
On the basis of the above technical solution, preferably, the length of the second contact electrode is 30% to 60% of the length of the light emitting diode body.
On the basis of the above technical solution, preferably, the second contact electrode at least includes a first electrode segment and a second electrode segment, where the first electrode segment is located at a position 0 to 1/3 sides of a short side width of the light emitting diode body, and the second electrode segment is at least partially located between the first pad electrode and the second semiconductor layer and electrically isolated from the first pad electrode by the insulating layer.
On the basis of the technical scheme, preferably, the length of the light emitting diode body is 8-45 mil, and the width of the light emitting diode body is 3-8 mil.
In addition to the above technical solution, preferably, when the length of the light emitting diode body is 20mil and the width thereof is 6mil, the length of the first contact electrode is 120 μm to 180 μm, and the length of the second contact electrode is 180 μm to 300 μm.
On the basis of the above technical solution, preferably, the aspect ratio of the light emitting diode body is not less than 2: 1.
On the basis of the above technical solution, preferably, the aspect ratio of the light emitting diode body is not less than 2:1, wherein the length is greater than or equal to 8mil, the width is less than or equal to 8mil, at least a portion of the second contact electrode is located at a position of a side of 0 to 1/3 of the width of the short side of the light emitting diode body, and a portion of the second contact electrode extends to the first pad electrode and is located at a position of a side of 1/3 to 2/3 of the width of the short side of the light emitting diode body.
In addition to the above technical solution, preferably, a ratio of a sum of areas of the first pad electrode and the second pad electrode to an area of the light emitting diode body is not less than 1/2.
The invention also provides a light-emitting module comprising the light-emitting diode in any scheme.
The invention also provides a display device which comprises the light-emitting module.
According to the light-emitting diode provided by the invention, the tail end of the first contact electrode is prevented from extending into the second pad electrode area by controlling the arrangement distance of the first contact electrode and the second pad electrode, and a pad electrode/insulating layer/contact electrode three-layer overlapped structure formed on the surface of a chip is damaged, so that the risk that solder paste easily permeates from a poor covering position (a fracture position) to cause the pad electrode and the contact electrode to be conducted and leaked, and further the chip is failed is eliminated.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating solder paste infiltration in a conventional LED structure;
fig. 2 is a schematic cross-sectional view of an led structure according to an embodiment of the invention;
fig. 3a to fig. 3b are schematic top views of light emitting diode structures according to still another embodiment of the invention;
fig. 4 is a schematic projection view of the first conductive type contact electrode 71 and the second pad electrode 82 in fig. 3a to 3b on a vertical plane;
fig. 5a to 5b are schematic structural diagrams of a first contact electrode 71 according to an embodiment of the invention;
fig. 6a to 6b are schematic top views of light emitting diode structures according to still another embodiment of the present invention;
FIG. 7 is a schematic view of the range of the thimble operation area in the LED;
FIG. 8 is a schematic diagram illustrating damage to a protruding region of a contact electrode due to a thimble puncture;
fig. 9a to 9d are schematic top views of light emitting diode structures according to still another embodiment of the invention;
fig. 10 is a schematic top view of a light emitting diode structure according to another embodiment of the present invention;
fig. 11a to 11c are schematic top views of light emitting diode structures according to still another embodiment of the invention;
fig. 12 is a schematic top view of a light emitting diode structure according to still another embodiment of the invention;
fig. 13 is a flow chart of a process for manufacturing a light emitting diode according to an embodiment of the present invention.
Reference numerals:
10 substrate 20 first semiconductor layer 30 light emitting layer
40 second semiconductor layer 50 current spreading layer 60 insulating layer
70 first electrode 71 first contact electrode 72 first pad electrode
80 second electrode 81 second contact electrode 82 second pad electrode
810 bend point 811 first electrode segment 812 second electrode segment
90 thimble work area
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Fig. 2 is a schematic cross-sectional view of a light emitting diode structure according to an embodiment of the present invention, as shown in fig. 2, the embodiment provides a light emitting diode, including:
a substrate 10; the epitaxial structure comprises a first semiconductor layer 20, a light-emitting layer 30 and a second semiconductor layer 40 which are sequentially stacked, and comprises an electrode table top, wherein the electrode table top is provided with an inclined plane penetrating through the second semiconductor layer 40 and the light-emitting layer 30, and a plane area exposing part of the first semiconductor layer 20; a first electrode 70, located on the first semiconductor layer 20, electrically connected to the first semiconductor layer 20, including a first pad electrode 72 and a first contact electrode 71, wherein the first contact electrode 71 is located in a planar region of the electrode mesa, forming an ohmic contact with the first semiconductor layer 20; a second electrode 80 positioned over the second semiconductor layer 40, electrically connected to the second semiconductor layer 40, the second electrode including a second pad electrode 82;
an insulating layer 60 located above the second semiconductor layer 40 and covering the inclined surface of the electrode mesa, wherein the first contact electrode 71 is provided with at least two through holes, and the first pad electrode 72 and the second pad electrode 82 are formed on the insulating layer 60 and electrically connected with the first contact electrode 71 and the second semiconductor layer 40 through the through holes, respectively; preferably, as shown in fig. 3b, a second contact electrode 81 is further included;
a transparent current spreading layer 50 is deposited on the second semiconductor layer 40 by evaporation, and the material of the current spreading layer 50 can be one or a combination of several of ITO, GTO, GZO and ZnO, and is not limited to the examples listed here;
wherein the insulating layer 60 comprises at least SiO2Layer, Si3N4Layer of Al2O3One or a combination of layers, AlN layers, DBR layers, and the like, and is not limited to the examples listed herein. As an example, a distributed bragg reflector DBR layer may be preferably used; the DBR layer covers the transparent current spreading layer 50 and the first and second contact electrodes 71 and 81, and is then perforated by dry etching, so as to achieve conduction between the first and second electrodes 70 and 80.
The structure is an embodiment structure of the light emitting diode, and a person skilled in the art can make corresponding changes according to actual requirements on the basis of the embodiment structure.
In the above embodiments, the substrate 10 comprises sapphire (Al) which may be selected as the substrate2O3) At least one of SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, and is not limited to the examples listed herein. The present embodiment prefers a sapphire substrate; the light emitting layer 30 is a multiple quantum well layer.
As an example, the first semiconductor layer 20 may be an N-type GaN layer, and the second semiconductor layer 40 may be a P-type GaN layer.
As an example, the first pad electrode 72 may be an N pad electrode, and the second pad electrode 82 may be a P pad electrode.
As an example, the first electrode 70 may be an N electrode, and the second electrode 80 may be a P electrode.
In this embodiment, the first electrode 70 and the second electrode 80 are metal electrodes for supplying current to the outside, for example, nickel, gold, chromium, titanium, platinum, palladium, rhodium, iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum, and one or a combination thereof.
Preferably, the light emitting diode is a rectangular chip with a length greater than or equal to 15mil, the distance between the first pad electrode 72 and the second pad electrode 82 is 60 to 300 μm, and preferably, the distance between the first pad electrode 72 and the second pad electrode 82 is 100 to 200 μm, optionally 150 μm; in the light emitting diode with the parameter range, the solder paste is easy to permeate from the poor covering position (the fracture position), so that the problem of chip failure caused by conduction and electric leakage among different electrodes is particularly serious, and the design scheme of the invention has a remarkable effect on solving the problem of the light emitting diode.
Fig. 3a to 3b are schematic top views of a light emitting diode structure according to an embodiment of the present invention, as shown in fig. 3a, the first electrode 70 includes a first contact electrode 71 and a first pad electrode 72, the first contact electrode 71 includes a strip structure, the strip structure is located at an edge region of the epitaxial structure, and the second electrode 80 includes a second pad electrode 82; wherein, the shortest distance d of the projection of the first contact electrode 71 and the second pad electrode 82 on the vertical plane (as shown in fig. 4) is greater than zero, so that there is no overlapping region of the first contact electrode 71 and the second pad electrode 82 on the vertical plane. The first contact electrode 71 extends from the first pad electrode 72 to the second pad electrode 82, preferably, the shortest distance between the first contact electrode 71 and the second pad electrode 82 is 5-50 μm, more preferably 10-50 μm and 20-40 μm, if the distance is too short, there is still a risk that paste easily penetrates into the gap between the first contact electrode 71 and the second pad electrode, and if the distance is too long, the voltage balance is affected, and the above distance selection can well solve the problem. Further, on the basis that the shortest projection distance d between the first contact electrode 71 and the second pad electrode 82 on the vertical plane is greater than zero, the shortest projection distance between the electrode mesa and the second pad electrode 82 on the vertical plane is also greater than zero.
In another example, the light emitting diode structure shown in fig. 3b is based on the structure shown in fig. 3a, and the second electrode 80 further includes a second contact electrode 81. Likewise, under this structure, the projection (as shown in fig. 4) of the first contact electrode 71 and the second pad electrode 82 on the vertical plane is a shortest distance d greater than zero, that is, there is no overlapping region of the first contact electrode 71 and the second pad electrode 82 on the vertical plane.
According to the invention, the shortest projection distance of the first contact electrode and the second pad electrode on the vertical surface is controlled, so that a three-layer overlapping structure formed by the second pad electrode, the insulating layer and the first contact electrode in the conventional chip structure is damaged, and the problem that the chip fails due to conduction and electric leakage of different electrodes caused by solder paste permeation can be effectively avoided.
In order to further solve the problem of uneven light emission caused by the increase of voltage due to the shortening of the length of the first contact electrode, the first contact electrode may be further defined as a rectangular parallelepiped having a volume of a fixed value, and the length, width and thickness thereof may be set according to the fixed value. Since the total resistance (contact resistance and diffusion resistance) between the first contact electrode and the first semiconductor is affected by its length, width, thickness, the same total resistance can be lost by adjusting different combinations of length, width and thickness. As shown by comparing the first contact electrodes shown in fig. 5a to 5b, the volume of the first contact electrodes in fig. 5a and 5b is set to a constant value, and if the thickness of the first contact electrode in fig. 5a is large, the length thereof is small; if the thickness of the first contact electrode is smaller in fig. 5b, the length is larger. Through the volume fixation of the first contact electrode, the length, the width and the thickness of the first contact electrode can be set as reference, and the problem of uneven light emission caused by the shortened length of the first contact electrode is solved.
In specific implementation, if the length of the light emitting diode body is 20 mils and the width thereof is 6 mils, the volume of the first contact electrode is controlled to be 540 μm3～6480μm3Rectangular parallelepipeds are preferred, with 1mil equal to 25.4. mu.m. The following tests were performed:
when the N-finger length was shortened from 150 μm to 130 μm, but the width was increased from 8 μm to 9.25 μm at the same time, the voltage was comparable, about 2.990V at 60 mA.
Experimental tests also show that when the first contact electrode is controlled to be in the size, the LED chip has a good light-emitting effect.
In the embodiment of the present invention, the problem of uneven light emission caused by the shortened length of the first contact electrode can be solved by controlling the ratio of the length of the first contact electrode to the length of the light emitting diode body, or the ratio of the volume of the first contact electrode to the volume of the light emitting diode body. Preferably, the length of the first contact electrode is 1/5-2/5 of the length of the light emitting diode body.
Compared with the overlapped structure without N-finger shortening treatment, the crystal bonding leakage defect rate generated at the end of N-finger is reduced from 0.5% to 0 after the N-finger shortening treatment.
Through the comparison of the test tests, the chip structure under the specifications can solve the problem that the chip fails due to the fact that different electrodes are conducted and leakage electricity is caused by the fact that solder paste permeates, and can also solve the problem of uneven light emission caused by the fact that the length of the first contact electrode is shortened.
In specific implementation, the end of the first contact electrode 71 may be set to be one of a broken line, a curved line or an arc line, or a combination thereof. Fig. 6a to 6b are schematic top views of a light emitting diode according to another embodiment of the present invention, as shown in fig. 6a, in which the first contact electrode 71 is curved; as shown in fig. 6b, the first contact electrode 71 in this example has a meander line shape.
Through the change of the structure of the first contact electrode, the actual contact range of the first contact electrode and the first semiconductor layer is increased, and the problem of uneven light emission caused by the shortened length of the first contact electrode is solved. It should be noted that the shape of the first contact electrode is not limited to the examples listed herein, and the design idea of the present invention is within the protection scope of the present invention.
In specific implementation, it is found that in the conventional led structure (as shown in fig. 7), the protruding region of the second contact electrode 81 falls on the operation region 90 of the thimble, so that the thimble directly abuts against the front surface of the chip during die bonding, and if the thimble abuts against the protruding region of the second contact electrode 81, the thimble is easily broken to cause chip abnormality (as shown in fig. 8).
In order to solve the above problems, in the embodiment of the present invention, a light emitting diode is further provided, and fig. 9a to 9c are schematic top views of a light emitting diode structure according to still another embodiment of the present invention, as shown in the drawing, the second contact electrode 81 extends from the second pad electrode 82 to the first pad electrode 72 around the thimble operation region 90, the thimble operation region 90 is a region covered by a range error when the thimble operates on the chip surface, and is a circular region with a radius not greater than 35 μm, preferably not greater than 25 μm.
The second contact electrode 81 includes a broken line, a curved line, a straight line, or a combination thereof in whole or in part.
Specifically, when the second contact electrode 81 is a multi-electrode segment combination, as shown in fig. 9a to 9c, the second contact electrode 81 is provided with a bending point 810, the second contact electrode 81 at least comprises a first electrode segment 811 and a second electrode segment 812, the first electrode segment 811 is an electrode segment between the starting point and the bending point 810 of the second contact electrode 81, and the second electrode segment 812 is an electrode segment between the bending point 810 and the end of the second contact electrode 81. An end point of the second contact electrode 81 extending toward the second pad electrode 82 is a starting point, and the other end of the second contact electrode 81 opposite to the starting point is an end.
Fig. 9a shows an embodiment structure in which the second electrode segments are respectively in a straight line shape, fig. 9b shows an embodiment structure in which the second electrode segments are in a zigzag line shape, fig. 9c shows an embodiment structure in which the second electrode segments are in a curved line shape, and the respective structures shown in fig. 9a to 9c can extend the length of the second electrode segments and increase the contact surface between the second contact electrode and the light emitting layer, thereby effectively avoiding the problem of uneven light emission caused by current change due to outward movement of the contact electrodes.
It should be noted that the shape of the second electrode segment is not limited to the examples listed herein, and includes, but is not limited to, one or a combination of straight lines, broken lines, curved lines, or arcs.
When the second contact electrode 81 is curved as a whole, as shown in the led structure of fig. 9d, the second contact electrode 81 is a single curved electrode segment, and the second contact electrode 81 extends from the second pad electrode 82 to the right short side direction by bypassing the thimble operation region 90.
In another example, as shown in fig. 10, the size of the chip is 6 x 20mil (width x length), under the condition that the second contact electrode 81 is ensured to bypass the thimble operation region 90, the bending point 810 of the second contact electrode 81 is located at 0 to 1/3 of the short side width of the chip body, the second electrode section 812 is connected with the first electrode section 811 and extends toward the first pad electrode 72, the second electrode section 812 is at least partially located between the first pad electrode and the second semiconductor layer and is electrically isolated from the first pad electrode by the insulating layer, and the end of the second contact electrode 81 is located at 1/3 to 2/3 of the short side width of the chip body. The experimental test comparison shown in table 1 shows that the bending point 810 and the end are disposed in the above-mentioned interval, which is an excellent solution to the problem of uneven light emission caused by current variation due to outward movement of the contact electrode. A chip having a bulk aspect ratio of not less than 2: 1; or the length of the chip body is 8-45 mil, and the width of the chip body is 3-8 mil; or, on the chip product that the ratio of the sum of the areas of the first pad electrode 72 and the second pad electrode 82 to the area of the body is not less than 1/2, the problem of uneven light emission caused by current change due to outward movement of the contact electrode can be effectively solved by combining the technical characteristics.
TABLE 1
Experimental tests show that when the bending point and the tail end are arranged in the region, the light emitting effect of the light emitting diode is good.
In specific implementation, tests show that the second electrode segments occupy 1/3-3/5 of the length of the light-emitting diode body as the second contact electrode, and the light-emitting effect of the light-emitting diode is good.
Fig. 11a is a schematic top view of a light emitting diode structure according to still another embodiment of the present invention, and as shown in fig. 11a, when the thimble operation region 90 is a circular region, the first electrode segment 811 has an arc shape, the thimble operation region 90 may be a circular region having a geometric center on the chip surface as a center of the thimble operation region and a maximum operation error length as a radius, the arc shape is the same as the center of the circular region, and the radius of the arc shape is greater than the radius of the circular region.
In another example, as shown in fig. 11b to 11c, when the thimble operation region 90 is a circular region, the first electrode segment 811 has a triangular shape or a rectangular shape protruding outward relative to the circular region, and the triangular shape or the rectangular shape is also disposed at a portion of the second contact electrode 81 close to the thimble operation region 90, so as to avoid the problem of uneven light emission caused by local voltage imbalance due to the change of the overall position of the second contact electrode 81.
Fig. 12 is a schematic top view of a light emitting diode structure according to still another embodiment of the present invention, and as shown in fig. 12, on the premise that the whole second contact electrode 81 is not shifted to the long side direction of the chip, the width of the first electrode segment 811 is partially smaller than the width of the rest of the first electrode segment 811. The narrower electrode segment is also disposed at the portion of the second contact electrode 81 close to the thimble operating region 90, so that the second contact electrode 81 can bypass the thimble operating region 90 while minimizing the deformation of the second contact electrode 81. More preferably, as shown in fig. 8, in the first electrode segment 811, only the portion near the thimble operation region 90 is deformed concavely so that the second contact electrode 81 avoids the thimble operation region 90, thereby achieving the design object of the present invention.
It should be noted that the shape of the second electrode segment shown in fig. 9a to 9c and the shape of the first electrode segment shown in fig. 11a to 11c and 12 can be freely combined and new configurations, and are not limited to the configurations shown in the above figures.
Similarly, the shapes of the first contact electrodes shown in fig. 6a to 6b, the shapes of the second electrode segments shown in fig. 9a to 9c, and the shapes of the first electrode segments shown in fig. 11a to 11c and 12 can be freely combined and newly designed, and are not limited to the configurations shown in the drawings.
In order to uniformly distribute current, the chip under the above specification generally extends the contact electrode as long as possible to the region where the pad electrode is located, i.e., a pad electrode/insulating layer/contact electrode three-layer overlapping structure generally exists, and the problem of chip failure due to conduction and leakage of the pad electrode and the contact electrode caused by solder paste infiltration also occurs.
Meanwhile, the width of the second contact electrode 81 is not less than 3 μm within the above size range of the light emitting diode. Tests show that the width of less than 3 μm affects the light emitting effect of the light emitting diode.
Preferably, the length of the second contact electrode 81 is 30% to 60% of the length of the light emitting diode body, for example, when the length of the light emitting diode body is 20mil and the width is 6mil, the length of the first contact electrode is 120 μm to 180 μm, and the length of the second contact electrode 81 is 180 μm to 300 μm, wherein 1mil is equal to 25.4 μm.
In a specific chip type example, the light emitting diode is in a flip-chip structure; of course, the design concept according to the present invention can also be applied to a front-mounted or vertical light emitting diode, and is not limited to the examples listed herein.
In the embodiment, the light emitting diode provided by the invention destroys the three-layer overlapping structure of the second pad electrode/the insulating layer/the first contact electrode formed on the surface of the chip by controlling the shortest projection distance of the first contact electrode and the second pad electrode on the vertical surface, so that the risk that solder paste easily permeates from a poor covering position (a fracture position) to cause conduction and leakage of the pad electrode and the contact electrode to cause chip failure is eliminated, and the production yield of the chip is improved.
According to the light-emitting diode provided by the preferred scheme of the invention, the second contact electrode is arranged outside the thimble operation region of the chip, so that the problem that the chip is abnormal because the thimble breaks the convex region of the contact electrode easily is solved. The second contact electrode is provided with a bending point, the second contact electrode at least comprises a first electrode section and a second electrode section, the first electrode section is an electrode section between the starting point and the bending point of the second contact electrode, the second electrode section is an electrode section between the bending point and the tail end of the second contact electrode, and the voltage can be controlled to be stable by deforming the shape of the second contact electrode, so that the problem of uneven light emission is solved, the yield of products is greatly improved in the production and application of LEDs, and the LED thimble structure has important practical application value.
Preferably, when the second contact electrode tail section is a curve or a broken line, the length of the tail section of the second contact electrode accounts for 1/3-1/2 of the whole length. As shown in table 2, the chip size is preferably tested at 6 x 20mil (width x length), and experimental tests show that the above scheme can effectively control the stability of the voltage. Similarly, the length-width ratio of the chip is not less than 2: 1; or the length of the chip body is 8-45 mil, and the width of the chip body is 4-8 mil; or, in the chip product in which the ratio of the sum of the areas of the first pad electrode 72 and the second pad electrode 82 to the area of the body is not less than 1/2, the stability of the voltage can be effectively controlled by combining the technical characteristics.
TABLE 2
Further, in order to avoid the problem that the width is too small to affect the current diffusion of the strip-shaped core particles and cause high voltage, as shown in fig. 8, the width w of the second contact electrode 81 near the thimble operation region section is not less than 3 μm, and experimental tests show that the electrode section with the width less than 3 μm causes voltage instability to affect the light emitting effect.
An embodiment of the present invention further provides a specific manufacturing process of a light emitting diode (as shown in fig. 2) as a reference, as shown in fig. 13, including the following steps:
a, growing a GaN buffer layer, an N-type GaN layer (a first semiconductor layer), a light-emitting layer and a P-type GaN layer (a second semiconductor layer) on a sapphire substrate in sequence;
step b, defining the size of the chip by an ICP dry etching method, and etching a table top to expose the N-type GaN layer;
c, manufacturing an ISO edge structure according to the edge of the chip through a yellow light and dry etching process;
step d, evaporating and plating a transparent current expansion layer on the P-type GaN layer, wherein the material of the expansion layer can be ITO, GTO, GZO, ZnO or the combination of several materials;
step e, forming a first/second contact electrode through yellow light and evaporation process;
step f, manufacturing a Bragg reflection layer (DBR) of SiO on the structure2、TIO2The insulating layer of the alternating structure, the insulating layer covers the whole chip area;
step g, exposing a part of the transparent current expansion layer and a part of the N-type GaN layer through dry etching;
h, manufacturing the first electrode and the second electrode again through photoetching and evaporation processes, wherein the surface layer of the electrode material is made of Au material;
step i, thinning and polishing a sapphire layer of the chip formed by the process by using grinding equipment;
j, cutting the chip by using a cutting and scribing process;
step k, inverting the light emitting diode to enable the back surface of the growth substrate to face upwards, and bonding the core particles on the heat dissipation substrate by using solder paste;
finally, the flip-chip light emitting diode is obtained through a packaging process.
In summary, the core idea of the present invention is as follows: by controlling the shortest projection distance of the first contact electrode and the second pad electrode on the vertical surface, the risk that different electrodes are conducted and leaked to cause chip failure due to the fact that solder paste easily permeates from poor covering positions (fracture positions) is eliminated, and the yield of products is improved. And furthermore, the second contact electrode is arranged outside the thimble operation area of the chip, so that the problem that the chip is abnormal because the thimble breaks the convex area of the contact electrode easily due to breakage is avoided. Compared with the existing structure, the outward movement of the second contact electrode can cause the problem that some current diffusion is weakened, so that a plurality of embodiments are designed in sequence as supplements, the problem that the thimble breaks the convex area of the contact electrode is solved, the current distribution is effectively improved, and the light-emitting efficiency of the light-emitting diode is improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (20)
1. A light emitting diode, characterized by: the method comprises the following steps:
the epitaxial structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked, and is provided with one or more electrode table tops, wherein each electrode table top comprises an inclined plane penetrating through the second semiconductor layer and the light-emitting layer, and a plane area exposing part of the first semiconductor layer;
a first electrode, located on the first semiconductor layer, electrically connected to the first semiconductor layer, and including at least a first pad electrode and a first contact electrode, wherein the first contact electrode is located in the planar region of the electrode mesa and forms an ohmic contact with the first semiconductor layer;
a second electrode located on the second semiconductor layer, electrically connected to the second semiconductor layer, and including at least a second pad electrode;
the insulating layer is positioned on the second semiconductor layer, covers the inclined plane of the electrode table top and the first contact electrode, is provided with at least two through holes, and is formed on the insulating layer and is electrically connected with the first contact electrode and the second semiconductor layer through the through holes respectively;
the projection shortest distance between the first contact electrode and the second pad electrode on the vertical surface is greater than zero.
2. The light-emitting diode according to claim 1, wherein the first contact electrode extends from the first pad electrode toward the second pad electrode, and a shortest distance from the first contact electrode to the second pad electrode is 5 to 50 μm.
3. The LED of claim 1, wherein the LED is a rectangular chip with a length of 15mil or more, and the distance between the first pad electrode and the second pad electrode is 60-300 μm.
4. The led of claim 1, wherein said first contact electrode comprises a stripe structure, said stripe structure being located at an edge region of said epitaxial structure.
5. The led of claim 1, wherein said first terminal is connected toThe volume of the contact electrode is 540 μm3～6480μm3。
6. The LED of claim 1, wherein the first contact electrode has a length 1/5-2/5 of the length of the LED body.
7. The light-emitting diode according to claim 1, wherein a projected shortest distance of the electrode mesa and the second pad electrode on a vertical plane is greater than zero.
8. The led of claim 1, wherein said insulating layer comprises at least SiO2Layer, Si3N4Layer of Al2O3One or a combination of layers, AlN layers, DBR layers.
9. The light-emitting diode according to claim 1, wherein the second electrode further comprises a second contact electrode between the second semiconductor layer and the insulating layer, extending in a direction of the first pad electrode.
10. The LED of claim 9, wherein the second contact electrode comprises at least a first electrode segment and a second electrode segment, wherein the bending point of the first electrode segment is located at the side of 0-1/3 mm of the width of the short side of the LED body, and the end of the second contact electrode is located at the side of 1/3-2/3 mm of the width of the short side of the LED body.
11. The LED of claim 9, wherein the second contact electrode comprises at least a first electrode segment and a second electrode segment, wherein the first electrode segment is located at the position of 0-1/3 sides of the width of the short side of the LED body, the second electrode segment is connected with the first electrode segment and extends toward the first pad electrode, and the second electrode segment occupies 1/3-1/2 of the length of the LED body.
12. The led of claim 9, wherein the length of the second contact electrode is 30-60% of the length of the led body.
13. The led of claim 9, wherein said second contact electrode comprises at least a first electrode segment and a second electrode segment, wherein said first electrode segment is located between 0 and 1/3 sides of the width of the short side of the led body, and said second electrode segment is located at least partially between said first pad electrode and said second semiconductor layer and is electrically isolated from said first pad electrode by said insulating layer.
14. The led of any one of claims 1-13, wherein the led body has a length of 8-45 mils and a width of 3-8 mils.
15. The led of claim 14, wherein the length of the first contact electrode is 120-180 μm and the length of the second contact electrode is 180-300 μm when the led body has a length of 20mil and a width of 6 mil.
16. The led of any one of claims 1-13, wherein the led body has an aspect ratio of not less than 2: 1.
17. The light-emitting diode of any one of claims 9 to 13, wherein the light-emitting diode body has an aspect ratio of not less than 2:1, a length of 8mil or more and a width of 8mil or less, and the second contact electrode is at least partially located between 0 and 1/3 sides of the width of the short side of the light-emitting diode body, partially extended toward the first pad electrode, and located between 1/3 and 2/3 sides of the width of the short side of the light-emitting diode body.
18. The light-emitting diode according to any one of claims 1 to 13, wherein a ratio of a sum of areas of the first pad electrode and the second pad electrode to an area of the light-emitting diode body is not less than 1/2.
19. A light emitting module, characterized in that a light emitting diode according to any one of claims 1 to 18 is used.
20. A display device comprising the light-emitting module according to claim 19.
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