CN111969088A - Mini LED chip structure and manufacturing method thereof - Google Patents
Mini LED chip structure and manufacturing method thereof Download PDFInfo
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- CN111969088A CN111969088A CN202010892708.8A CN202010892708A CN111969088A CN 111969088 A CN111969088 A CN 111969088A CN 202010892708 A CN202010892708 A CN 202010892708A CN 111969088 A CN111969088 A CN 111969088A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 134
- 239000002184 metal Substances 0.000 claims abstract description 134
- 238000002347 injection Methods 0.000 claims abstract description 54
- 239000007924 injection Substances 0.000 claims abstract description 54
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 17
- 238000013508 migration Methods 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims description 50
- 238000001228 spectrum Methods 0.000 claims description 36
- 229910002601 GaN Inorganic materials 0.000 claims description 33
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 30
- 238000003892 spreading Methods 0.000 claims description 24
- 238000001259 photo etching Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 15
- 238000009616 inductively coupled plasma Methods 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 12
- 239000003153 chemical reaction reagent Substances 0.000 claims description 8
- -1 chromium-aluminum-titanium-ruthenium-gold-titanium-platinum-gold-titanium Chemical compound 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 230000006641 stabilisation Effects 0.000 claims description 8
- 238000011105 stabilization Methods 0.000 claims description 8
- 230000000087 stabilizing effect Effects 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000001017 electron-beam sputter deposition Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 239000003353 gold alloy Substances 0.000 claims description 4
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 229910052697 platinum Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a Mini LED chip structure and a manufacturing method thereof, wherein the Mini LED chip structure comprises a P-type current expansion injection metal layer and an N-type current expansion injection metal layer, and the P-type current expansion injection metal layer and the N-type current expansion injection metal layer comprise anti-migration metal ruthenium.
Description
Technical Field
The invention relates to the field of chip manufacturing, in particular to a Mini LED chip structure and a manufacturing method thereof.
Background
The Mini LED chip generally refers to an LED chip with the side length of 100-200 um, and has the characteristic of miniaturization, so that the application field and the manufacturing technology of the Mini LED chip are greatly different from those of the traditional LED chip; the Mini LED is generally used for a direct type backlight of an outdoor large screen with ultrahigh resolution, a film screen and a high-end LCD display, and the 3 application scenes can not be realized by the traditional LED.
The manufacturing difficulties of the Mini LED are: 1. the size is small; 2. the structure is complex; 3. the welding wire has high requirements on the reliability aspects of welding, temperature resistance, current resistance and the like; moreover, the Mini LEDs are used in the fields of backlight, display and the like, the Mini LEDs are arranged in high density, even if a single chip fails, the maintenance cost is high, so that the reliability of the chip is the most important quality index of the Mini LED product, and the main reason for the reliability problem of the Mini LEDs is that metal in the chip structure migrates under the long-term impact of current. In conclusion, developing a metal structure which is resistant to current impact and not easy to migrate is the most core technical requirement for improving the quality of the Mini LED;
in the prior art, platinum is generally used as an anti-migration layer in a Mini LED chip, and when the Mini LED chip faces ultra-small size, large current density and long-time current impact, the problem of metal layer migration still occurs, including the problem of migration of the underlying metal covered by platinum.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the Mini LED chip structure and the manufacturing method thereof are provided, and the chip structure with higher current impact resistance and higher electromigration resistance is realized.
In order to solve the technical problems, the invention adopts a technical scheme that:
a Mini LED chip structure comprises a P-type current expansion injection metal layer and an N-type current expansion injection metal layer, wherein the P-type current expansion injection metal layer and the N-type current expansion injection metal layer comprise anti-migration metal ruthenium.
The invention has the beneficial effects that: the metal ruthenium is used for replacing the traditional metal platinum to serve as the anti-migration layer in the N/P type current expansion injection metal layer, meanwhile, the metal ruthenium has better characteristics in the aspects of over-drive resistance and high temperature resistance, current impact resistance can be achieved, higher anti-electromigration effect can be achieved, the process window of the metal ruthenium is stable, the price is equivalent to that of platinum, the cost cannot be increased, and the better anti-migration effect can be achieved under the condition that the cost is appropriate.
Drawings
Fig. 1 is a schematic structural diagram of a Mini LED chip according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a P/N type current spreading injection metal layer structure according to an embodiment of the present invention;
FIG. 3 is a top view of a P/N type current spreading injection metal layer according to an embodiment of the present invention;
FIG. 4 is a flowchart illustrating steps of a method for manufacturing a Mini LED chip according to an embodiment of the present invention;
description of reference numerals:
1. p-type current is expanded and injected into the metal layer; 2. injecting N-type current into the metal layer in an expanded mode;
3. a substrate layer; 4. an N-type gallium nitride layer; 5. a multi-layer quantum well layer; 6. a P-type gallium nitride layer; 7. a current spreading layer; 8. a first current stabilization layer; 9. p-type current is expanded and injected into the metal layer; 10. a P-type welding bonding interface metal layer; 11. a buffer insulating layer; 12. a stress release layer; 13. an insulating full spectrum reflective layer; 14. an N-type welding bonding interface metal layer; 15. injecting N-type current into the metal layer in an expanded mode; 16. a second current stabilization layer.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1 to 3, a Mini LED chip structure includes a P-type current spreading injection metal layer and an N-type current spreading injection metal layer, where the P-type current spreading injection metal layer and the N-type current spreading injection metal layer include ruthenium, which is an anti-migration metal.
From the above description, the beneficial effects of the present invention are: the metal ruthenium is used for replacing the traditional metal platinum to serve as the anti-migration layer in the N/P type current expansion injection metal layer, meanwhile, the metal ruthenium has better characteristics in the aspects of over-drive resistance and high temperature resistance, higher anti-migration effect can be achieved, the process window of the metal ruthenium is stable, the price is equivalent to that of platinum, the cost cannot be increased, and the better anti-migration effect can be achieved under the condition that the cost is appropriate.
Further, the P-type current spreading injection metal layer and the N-type current spreading injection metal layer are both of the following metal structures: the chromium-aluminum-titanium-ruthenium-gold LED chip is sequentially arranged from one side close to the bottom of the Mini LED chip to one side far away from the bottom of the Mini LED chip.
From the above description, the composite layer composed of ruthenium and titanium can more effectively cover the lower layer of metals such as aluminum and chromium, and further enhance the electromigration resistance effect.
Further, the device also comprises a substrate layer, an N-type gallium nitride layer, a multi-layer quantum well layer, a P-type gallium nitride layer, a current expansion layer, a first current stabilizing layer, a P-type welding joint interface metal layer, a second current stabilizing layer and an N-type welding joint interface metal layer;
the N-type gallium nitride layer is located in the middle area of one side of the substrate layer, a plurality of quantum well layers, a P-type gallium nitride layer, a current expansion layer, a first current stabilization layer, a P-type current expansion injection metal layer and a P-type welding bonding interface metal layer are sequentially stacked in a first stacking area on one side of one surface, which is not in contact with the substrate layer, of the N-type gallium nitride layer, and a second current stabilization layer, an N-type current expansion injection metal layer and an N-type welding bonding interface metal layer are sequentially stacked in a second stacking area on the other side of the N-type gallium nitride layer.
According to the above description, the substrate layer, the N-type gallium nitride layer, the multi-layer quantum well layer, the P-type gallium nitride layer and other structures are matched with the P-type current expansion injection metal layer and the N-type current expansion injection metal layer to form a complete chip structure, so that the production of an actual chip can be realized.
Further, the sections of the P-type welding bonding interface metal layer and the N-type welding bonding interface metal layer are similar to T-shaped;
buffer insulating layers are stacked on the outer side of the first stacking area, the side, not in contact with the P-type gallium nitride layer, of the current extension layer, between the first stacking area and the second stacking area and on the outer side of the second stacking area;
a stress release layer and an insulating full-spectrum reflecting layer are sequentially stacked on one side of the buffer insulating layer, which is far away from the substrate layer;
one end of the P-type welding bonding interface metal layer is connected with the P-type current expansion injection metal layer, and the other end of the P-type welding bonding interface metal layer penetrates through the stress release layer and the insulating full spectrum reflection layer and is positioned on one side, far away from the stress release layer, of the insulating full spectrum reflection layer;
one end of the N-type welding bonding interface metal layer is connected with the N-type current expansion injection metal layer, and the other end of the N-type welding bonding interface metal layer penetrates through the insulating buffer layer, the stress release layer and the insulating full spectrum reflection layer and is located on one side, far away from the stress release layer, of the insulating full spectrum reflection layer.
According to the description, the insulating buffer layer, the stress release layer and the insulating full-spectrum reflecting layer are arranged, so that the performance of the chip can be further improved, and the overall reliability, service life, large-current resistance and high-temperature resistance of the chip are improved.
Further, the metal structures of the P-type welding bonding interface metal layer and the N-type welding bonding interface metal layer are the same and are chromium-aluminum-titanium-ruthenium-aluminum-titanium-nickel-gold;
the titanium-ruthenium-aluminum in the metal structure is recycled for many times.
According to the description, the metal ruthenium is added into the P-type welding bonding interface metal layer and the N-type welding bonding interface metal layer, the welding bonding capacity of the ruthenium is strong, the welding is more convenient, and the performance of the Mini LED chip can be improved.
Further, the current spreading layer is indium tin oxide, indium tungsten oxide or nickel-gold alloy.
As can be seen from the above description, the provision of the current spreading layer can improve the light emitting efficiency.
Further, the buffer insulating layer is silicon oxide, titanium oxide, hafnium oxide or tantalum oxide;
the stress release layer is silicon oxide or titanium oxide.
According to the above description, the buffer insulating layer is provided to facilitate the transmission of carriers, and the stress release layer is provided to increase the strength of the chip, so that the chip is not easy to damage.
Furthermore, the insulating full-spectrum reflecting layer is made of silicon oxide or titanium oxide and is 3-7um thick.
From the above description, the full spectrum reflection side is beneficial to transmitting visible light of each spectrum, and the display performance is improved.
Referring to fig. 4, a method for manufacturing a Mini LED chip can manufacture the Mini LED chip structure described above, including the steps of:
s1, carrying out pattern transfer on the prepared gallium nitride epitaxial material according to a first preset pattern through a photoetching facility, and then etching a gallium nitride epitaxial wafer by using an ICP (inductively coupled plasma) device to form an N-type gallium nitride layer on the substrate;
s2, firstly, manufacturing a current expansion layer template through an evaporator or a sputtering machine, then carrying out pattern transfer on the current expansion layer template through a photoetching facility according to a second preset pattern, and finally corroding the current expansion layer template through a chemical reagent to form a current expansion layer;
s3, carrying out pattern transfer on the photoresist according to a third preset pattern through a photoetching facility, and simultaneously forming a P-type current expansion injection metal layer and an N-type current expansion injection metal layer in an electron beam evaporation or sputtering evaporation mode;
and S4, transferring the material according to a seventh preset pattern through a photoetching facility, and simultaneously manufacturing a P-type welding bonding interface metal layer and an N-type welding bonding interface metal layer in an electron beam evaporation or sputtering evaporation mode.
As can be seen from the above description, a method for manufacturing a Mini LED chip is provided, which enables the P-type current spreading injection metal layer with ruthenium and the N-type current spreading injection metal layer with ruthenium to be applied in practical production.
Further, between the S3 and the S4, the method further includes:
preparing a buffer insulating layer template by PECVD equipment or ALD equipment, carrying out pattern transfer on the buffer insulating layer template according to a fourth preset pattern by a photoetching facility, and corroding the buffer insulating layer template by a chemical reagent to form a buffer insulating layer;
manufacturing a stress release layer template through PECVD equipment or optical ion evaporation equipment, carrying out pattern transfer on the stress release layer template according to a fifth preset pattern through a photoetching facility, and forming a stress release layer through a chemical corrosion or ICP etching mode;
and after the insulating full-spectrum reflecting layer template is manufactured by optical ion evaporation equipment, pattern transfer is carried out on the insulating full-spectrum reflecting layer template according to a sixth preset pattern by a photoetching facility, and then an insulating full-spectrum reflecting layer is formed by means of chemical corrosion or ICP etching.
From the above description, it can be seen that the fabrication of the buffer insulating layer, the stress releasing layer and the insulating full spectrum reflective layer can achieve the fabrication of a higher performance chip.
Referring to fig. 1 to fig. 3, a first embodiment of the present invention is:
a Mini LED chip structure, please refer to fig. 1, which specifically includes:
the device comprises a substrate layer 3, an N-type gallium nitride layer 4, a multi-layer quantum well layer 5, a P-type gallium nitride layer 6, a current expansion layer 7, a first current stabilization layer 8, a P-type current expansion injection metal layer 9, a P-type welding joint interface metal layer 10, a second current stabilization layer 16, an N-type current expansion injection metal layer 15, an N-type welding joint interface metal layer 14, a buffer insulation layer 11, a stress release layer 12 and an insulation full spectrum reflection layer 13;
the N-type gallium nitride layer 4 is positioned in the middle area of one side of the substrate layer 3, and one side, close to the other side of the substrate layer 3, of the Mini LED chip is the bottom of the Mini LED chip; a plurality of quantum well layers 5, P-type gallium nitride layers 6, current expansion layers 7, a first current stabilizing layer 8, a P-type current expansion injection metal layer 9 and a P-type welding bonding interface metal layer 10 are sequentially stacked in a first stacking region on one side of one surface, far away from the substrate layer 3, of the N-type gallium nitride layer 4, and a second current stabilizing layer 16, an N-type current expansion injection metal layer 15 and an N-type welding bonding interface metal layer 14 are sequentially stacked in a second stacking region on the other side;
the cross sections of the P-type welding bonding interface metal layer 10 and the N-type welding bonding interface metal layer 14 are in a T-like shape; buffer insulating layers 11 are stacked on the outer side of the first stacking region, the side of the current expansion layer 7, which is not in contact with the P-type gallium nitride layer, between the first stacking region and the second stacking region and on the outer side of the second stacking region; a stress release layer 12 and an insulating full-spectrum reflecting layer 13 are sequentially stacked above the buffer insulating layer 11; one end of the P-type welding bonding interface metal layer 10 is connected with the P-type current expansion injection metal layer 9, and the other end of the P-type welding bonding interface metal layer passes through the stress release layer 12 and the insulating full spectrum reflection layer 13 and is positioned on one side, far away from the stress release layer, of the insulating full spectrum reflection layer 13; one end of the N-type welding bonding interface metal layer 14 is connected with the N-type current spreading injection metal layer 15, and the other end passes through the insulating buffer layer 11, the stress release layer 12 and the insulating full spectrum reflection layer 13 and is located on one side of the insulating full spectrum reflection layer 13 far away from the stress release layer;
a P-type contact surface is formed between the P-type current expansion injection metal layer and the first current stabilizing layer; an N-type contact surface is formed between the N-type current expansion injection metal layer and the second current stabilizing layer;
referring to fig. 2, the P-type current spreading injection metal layer 9 and the N-type current spreading injection metal layer 15 are all of the following metal structures: the alloy comprises chromium, aluminum, titanium, ruthenium, gold and platinum, and is sequentially arranged from one side close to a substrate layer 3 to one side far away from the substrate layer 3 to be chromium-aluminum-titanium-ruthenium-gold-titanium-platinum-gold-titanium (Cr-Al- (Ti-Ru-Ti-Ru-Ti-Ru) -Au-Ti-Pt-Au-Ti);
the metal structures of the P-type welding bonding interface metal layer 10 and the N-type welding bonding interface metal layer 14 are the same, chromium-aluminum-titanium-ruthenium-aluminum-titanium-nickel-gold is arranged from one side close to the substrate layer 3 to one side far away from the substrate layer 3, and titanium-ruthenium-aluminum is circulated for multiple times;
the current spreading layer 7 is indium tin oxide, indium tungsten oxide or nickel-gold alloy; the buffer insulating layer 11 is silicon oxide, titanium oxide, hafnium oxide or tantalum oxide; the stress release layer 12 is silicon oxide or titanium oxide; the insulating full-spectrum reflecting layer 13 is made of silicon oxide or titanium oxide and has a thickness of 3-7 um.
Referring to fig. 4, a second embodiment of the present invention is:
a method for manufacturing a Mini LED chip specifically comprises the following steps:
s1, carrying out pattern transfer on the prepared GaN epitaxial material according to a first preset pattern through a photoetching facility, and then etching a gallium nitride epitaxial wafer by using an ICP (inductively coupled plasma) device to form an N-type gallium nitride layer on the substrate;
s2, firstly, manufacturing a current expansion layer template through an evaporation plating machine or a sputtering machine, wherein the current expansion layer template can be made of indium tin oxide, indium tungsten oxide, nickel-gold alloy and the like, then carrying out pattern transfer on the current expansion layer template through a photoetching facility according to a second preset pattern, and finally corroding the current expansion layer template through a chemical reagent to form a current expansion layer;
the chemical reagent can be hydrochloric acid, oxalic acid, ferric trichloride;
s3, carrying out pattern transfer on the photoresist according to a third preset pattern through a photoetching facility, and simultaneously forming a P-type current expansion injection metal layer and an N-type current expansion injection metal layer in an electron beam evaporation or sputtering evaporation mode; the metal layer structure is Cr-Al- (Ti-Ru-Ti-Ru-Ti-Ru) -Au-Ti-Pt-Au-Ti, and redundant photoresist is removed in a photoresist removing liquid cleaning mode;
s4, preparing a buffer insulating layer template by PECVD equipment or ALD equipment, wherein the buffer insulating layer template can be made of silicon oxide, titanium oxide, hafnium oxide, tantalum oxide and the like, patterning the buffer insulating layer template according to a fourth preset pattern by photoetching facilities, transferring the pattern to the surface of the processed part of the whole chip, and corroding the buffer insulating layer template by a chemical reagent to form a buffer insulating layer;
the chemical reagent can be hydrofluoric acid, ammonium fluoride and the like;
s5, manufacturing a stress release layer template by PECVD equipment or optical ion evaporation equipment, wherein the stress release layer template can be made of silicon oxide, titanium oxide and the like, transferring the stress release layer template to the surface of the processed part of the whole chip after pattern transfer is carried out on the stress release layer template according to a fifth preset pattern by photoetching facilities, and forming a stress release layer by means of chemical corrosion or ICP etching;
if the chemical etching is performed, the etching solution can be hydrofluoric acid, ammonium fluoride and the like; in case of ICP etching, the etching gas can be trifluoromethane, carbon tetrafluoride, sulfur hexafluoride, etc.;
s6, after an insulating full-spectrum reflecting layer template is manufactured through optical ion evaporation equipment, the insulating full-spectrum reflecting layer template is subjected to pattern transfer through a photoetching facility according to a sixth preset pattern, and then the insulating full-spectrum reflecting layer template is transferred to the surface of the processed part of the whole chip, and an insulating full-spectrum reflecting layer is formed through a chemical corrosion or ICP (inductively coupled plasma) etching mode;
the insulating full-spectrum reflecting layer template can be made of silicon oxide, titanium oxide and the like, and the thickness of the insulating full-spectrum reflecting layer template is 3-7 um; if the chemical etching is performed, the etching solution can be hydrofluoric acid, ammonium fluoride, hydrochloric acid, etc.; in case of ICP etching, the etching gas can be trifluoromethane, carbon tetrafluoride, sulfur hexafluoride, etc.;
s7, transferring the material according to a seventh preset pattern through a photoetching facility, simultaneously manufacturing a P-type welding bonding interface metal layer and an N-type welding bonding interface metal layer in an electron beam evaporation or sputtering evaporation mode, wherein the metal layer is formed by circulating Cr-Al- (Ti-Ru-Al) in brackets for multiple times and then removing the redundant photoresist in a photoresist removing liquid cleaning mode;
the lithography facility may be a lithography machine or a photoresist.
In summary, the present invention provides a Mini LED chip structure and a method for manufacturing the same, wherein ruthenium metal is used as a metal material of an anti-migration layer in a P/N type current spreading injection metal layer, the Mini LED chip is enhanced by using the superior current spreading, over-driving resistance, high temperature resistance and environmental corrosion resistance of ruthenium metal, and the cost of ruthenium metal is equivalent to that of platinum metal used in an anti-migration layer in the prior art, the cost is appropriate, the manufacturing cost is not greatly increased while the chip performance is improved, ruthenium metal is innovatively applied to a P/N type welding bonding interface metal layer, the welding bonding capability of ruthenium is stronger, the welding at the use end is convenient, the performance of the P/N type welding bonding interface metal layer is improved, and the P/N type current spreading injection metal layer and the P/N type welding bonding interface metal layer are both enhanced by using ruthenium metal, the strength of the Mini LED chip is improved in many aspects, and the probability of failure of the Mini LED chip in use is reduced; in addition, the method for manufacturing the Mini LED chip according to the present invention can manufacture a Mini LED chip having the above-described structure, and can make it possible to apply ruthenium metal to actual production of the Mini LED chip.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (10)
1. A Mini LED chip structure comprises a P-type current expansion injection metal layer and an N-type current expansion injection metal layer, and is characterized in that the P-type current expansion injection metal layer and the N-type current expansion injection metal layer comprise anti-migration metal ruthenium.
2. The Mini LED chip structure of claim 1, wherein the P-type current spreading injection metal layer and the N-type current spreading injection metal layer are both of the following metal structures: the chromium-aluminum-titanium-ruthenium-gold-titanium-platinum-gold-titanium LED chip is sequentially arranged from one side close to the bottom of the Mini LED chip to one side far away from the bottom of the Mini LED chip.
3. The Mini LED chip structure of claim 1, further comprising a substrate layer, an N-type GaN layer, a multi-layer quantum well layer, a P-type GaN layer, a current spreading layer, a first current stabilizing layer, a P-type welding bonding interface metal layer, a second current stabilizing layer, and an N-type welding bonding interface metal layer;
the N-type gallium nitride layer is located in the middle area of one side of the substrate layer, a plurality of quantum well layers, a P-type gallium nitride layer, a current expansion layer, a first current stabilization layer, a P-type current expansion injection metal layer and a P-type welding bonding interface metal layer are sequentially stacked in a first stacking area on one side of one surface, which is not in contact with the substrate layer, of the N-type gallium nitride layer, and a second current stabilization layer, an N-type current expansion injection metal layer and an N-type welding bonding interface metal layer are sequentially stacked in a second stacking area on the other side of the N-type gallium nitride layer.
4. The Mini LED chip structure of claim 3, wherein the cross-section of the P-type bonding interface metal layer and the N-type bonding interface metal layer is similar to T-shape;
buffer insulating layers are stacked on the outer side of the first stacking area, the side, not in contact with the P-type gallium nitride layer, of the current extension layer, between the first stacking area and the second stacking area and on the outer side of the second stacking area;
a stress release layer and an insulating full-spectrum reflecting layer are sequentially stacked on one side of the buffer insulating layer, which is far away from the substrate layer;
one end of the P-type welding bonding interface metal layer is connected with the P-type current expansion injection metal layer, and the other end of the P-type welding bonding interface metal layer penetrates through the stress release layer and the insulating full spectrum reflection layer and is positioned on one side, far away from the stress release layer, of the insulating full spectrum reflection layer;
one end of the N-type welding bonding interface metal layer is connected with the N-type current expansion injection metal layer, and the other end of the N-type welding bonding interface metal layer penetrates through the insulating buffer layer, the stress release layer and the insulating full spectrum reflection layer and is located on one side, far away from the stress release layer, of the insulating full spectrum reflection layer.
5. The Mini LED chip structure of claim 3, wherein the P-type bonding interface metal layer and the N-type bonding interface metal layer have the same metal structure and are Cr-Al-Ti-Ru-Al-Ti-Ni-Au;
the titanium-ruthenium-aluminum in the metal structure is recycled for many times.
6. The Mini LED chip structure of claim 3, wherein the current spreading layer is indium tin oxide, indium tungsten oxide or nickel-gold alloy.
7. The Mini LED chip structure of claim 4, wherein the buffer insulating layer is silicon oxide, titanium oxide, hafnium oxide or tantalum oxide;
the stress release layer is silicon oxide or titanium oxide.
8. The Mini LED chip structure of claim 3, wherein the insulating full spectrum reflective layer is silicon oxide or titanium oxide with a thickness of 3-7 um.
9. A method for manufacturing a Mini LED chip, capable of manufacturing the Mini LED chip structure of claim 3 or 4, comprising the steps of:
s1, carrying out pattern transfer on the prepared gallium nitride epitaxial material according to a first preset pattern through a photoetching facility, and then etching a gallium nitride epitaxial wafer by using an ICP (inductively coupled plasma) device to form an N-type gallium nitride layer on the substrate;
s2, firstly, manufacturing a current expansion layer template through an evaporator or a sputtering machine, then carrying out pattern transfer on the current expansion layer template through a photoetching facility according to a second preset pattern, and finally corroding the current expansion layer template through a chemical reagent to form a current expansion layer;
s3, carrying out pattern transfer on the photoresist according to a third preset pattern through a photoetching facility, and simultaneously forming a P-type current expansion injection metal layer and an N-type current expansion injection metal layer in an electron beam evaporation or sputtering evaporation mode;
and S4, transferring the material according to a seventh preset pattern through a photoetching facility, and simultaneously manufacturing a P-type welding bonding interface metal layer and an N-type welding bonding interface metal layer in an electron beam evaporation or sputtering evaporation mode.
10. The method of claim 9, wherein between S3 and S4, the method further comprises:
preparing a buffer insulating layer template by PECVD equipment or ALD equipment, carrying out pattern transfer on the buffer insulating layer template according to a fourth preset pattern by a photoetching facility, and corroding the buffer insulating layer template by a chemical reagent to form a buffer insulating layer;
manufacturing a stress release layer template through PECVD equipment or optical ion evaporation equipment, carrying out pattern transfer on the stress release layer template according to a fifth preset pattern through a photoetching facility, and forming a stress release layer through a chemical corrosion or ICP etching mode;
and after the insulating full-spectrum reflecting layer template is manufactured by optical ion evaporation equipment, pattern transfer is carried out on the insulating full-spectrum reflecting layer template according to a sixth preset pattern by a photoetching facility, and then an insulating full-spectrum reflecting layer is formed by means of chemical corrosion or ICP etching.
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| PCT/CN2021/094249 WO2022041859A1 (en) | 2020-08-31 | 2021-05-18 | Mini led chip structure and manufacturing method therefor |
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| CN114388673A (en) * | 2021-12-08 | 2022-04-22 | 华灿光电（浙江）有限公司 | Micro light-emitting diode chip and preparation method thereof |
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