CN111052398B - 自旋轨道转矩型磁化反转元件和磁存储器 - Google Patents

自旋轨道转矩型磁化反转元件和磁存储器 Download PDF

Info

Publication number
CN111052398B
CN111052398B CN201880052140.XA CN201880052140A CN111052398B CN 111052398 B CN111052398 B CN 111052398B CN 201880052140 A CN201880052140 A CN 201880052140A CN 111052398 B CN111052398 B CN 111052398B
Authority
CN
China
Prior art keywords
spin
orbit torque
ferromagnetic metal
metal layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880052140.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN111052398A (zh
Inventor
须田庆太
佐佐木智生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Publication of CN111052398A publication Critical patent/CN111052398A/zh
Application granted granted Critical
Publication of CN111052398B publication Critical patent/CN111052398B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN201880052140.XA 2017-09-04 2018-08-31 自旋轨道转矩型磁化反转元件和磁存储器 Active CN111052398B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017169733A JP6686990B2 (ja) 2017-09-04 2017-09-04 スピン軌道トルク型磁化反転素子及び磁気メモリ
JP2017-169733 2017-09-04
PCT/JP2018/032404 WO2019045055A1 (ja) 2017-09-04 2018-08-31 スピン軌道トルク型磁化反転素子及び磁気メモリ

Publications (2)

Publication Number Publication Date
CN111052398A CN111052398A (zh) 2020-04-21
CN111052398B true CN111052398B (zh) 2023-09-29

Family

ID=65525474

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880052140.XA Active CN111052398B (zh) 2017-09-04 2018-08-31 自旋轨道转矩型磁化反转元件和磁存储器

Country Status (4)

Country Link
US (2) US11264563B2 (https=)
JP (1) JP6686990B2 (https=)
CN (1) CN111052398B (https=)
WO (1) WO2019045055A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11094360B2 (en) * 2017-10-13 2021-08-17 Semiconductor Energy Laboratory Co., Ltd. Storage device, electronic component, and electronic device
CN111492491B (zh) * 2018-05-31 2024-04-09 Tdk株式会社 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件以及磁存储器
US11895928B2 (en) * 2019-10-03 2024-02-06 Headway Technologies, Inc. Integration scheme for three terminal spin-orbit-torque (SOT) switching devices
CN111490156A (zh) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 自旋轨道力矩磁存储器件及其制备方法
JP2022073039A (ja) * 2020-10-30 2022-05-17 Tdk株式会社 スピン素子、磁気アレイ及びスピン素子の製造方法
WO2022102122A1 (ja) 2020-11-16 2022-05-19 Tdk株式会社 磁化回転素子、磁気抵抗効果素子及び磁気メモリ
JP7710752B2 (ja) * 2021-04-12 2025-07-22 国立大学法人 東京大学 磁気メモリ素子及びその作製方法
US12361995B2 (en) 2022-09-30 2025-07-15 International Business Machines Corporation Spin-orbit-torque (SOT) MRAM with doubled layer of SOT metal

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013187250A (ja) * 2012-03-06 2013-09-19 Toshiba Corp 半導体磁気記憶装置およびその製造方法
WO2016021468A1 (ja) * 2014-08-08 2016-02-11 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
JP2016046492A (ja) * 2014-08-26 2016-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2017059679A (ja) * 2015-09-16 2017-03-23 株式会社東芝 磁気メモリ
JP2017059594A (ja) * 2015-09-14 2017-03-23 株式会社東芝 磁気メモリ

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3377519B2 (ja) * 2000-12-22 2003-02-17 ティーディーケイ株式会社 トルクセンサおよびその製造方法
JP4065787B2 (ja) * 2002-08-30 2008-03-26 株式会社日立グローバルストレージテクノロジーズ 磁気ヘッドおよび磁気記録再生装置
JP5382295B2 (ja) 2008-06-27 2014-01-08 日本電気株式会社 磁気ランダムアクセスメモリ
FR2963153B1 (fr) 2010-07-26 2013-04-26 Centre Nat Rech Scient Element magnetique inscriptible
JP5695453B2 (ja) 2011-03-07 2015-04-08 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2013016587A (ja) * 2011-07-01 2013-01-24 Toshiba Corp 磁気抵抗効果素子及びその製造方法
US9105832B2 (en) 2011-08-18 2015-08-11 Cornell University Spin hall effect magnetic apparatus, method and applications
JP5605414B2 (ja) 2012-10-17 2014-10-15 Ｔｄｋ株式会社 電子部品内蔵基板及びその製造方法
JP5985728B1 (ja) * 2015-09-15 2016-09-06 株式会社東芝 磁気メモリ
WO2017090728A1 (ja) * 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ
KR102515035B1 (ko) * 2015-12-30 2023-03-30 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US10490735B2 (en) 2016-03-14 2019-11-26 Tdk Corporation Magnetic memory
US10686127B2 (en) * 2016-03-28 2020-06-16 National University Of Singapore Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque
JP6733496B2 (ja) * 2016-10-27 2020-07-29 Tdk株式会社 スピン軌道トルク型磁化反転素子及び磁気メモリ
US10396276B2 (en) * 2016-10-27 2019-08-27 Tdk Corporation Electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element, magnetoresistance effect element, magnetic memory and high-frequency filter
JP2019047120A (ja) * 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
US10741318B2 (en) * 2017-09-05 2020-08-11 Tdk Corporation Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
US10910554B2 (en) * 2017-09-07 2021-02-02 Tdk Corporation Spin-current magnetization rotational element and spin orbit torque type magnetoresistance effect element
JP2019057626A (ja) * 2017-09-21 2019-04-11 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
JP7098914B2 (ja) * 2017-11-14 2022-07-12 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
US10971293B2 (en) * 2017-12-28 2021-04-06 Tdk Corporation Spin-orbit-torque magnetization rotational element, spin-orbit-torque magnetoresistance effect element, and spin-orbit-torque magnetization rotational element manufacturing method
JP6540786B1 (ja) * 2017-12-28 2019-07-10 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
JP7020173B2 (ja) * 2018-02-26 2022-02-16 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及びスピン軌道トルク型磁化回転素子の製造方法
JP7052448B2 (ja) * 2018-03-16 2022-04-12 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び発振器
JP6919608B2 (ja) * 2018-03-16 2021-08-18 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
CN111492491B (zh) * 2018-05-31 2024-04-09 Tdk株式会社 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件以及磁存储器
JP2020043167A (ja) * 2018-09-07 2020-03-19 Tdk株式会社 スピン軌道トルク型磁化回転素子及びスピン軌道トルク型磁気抵抗効果素子
JP2020072199A (ja) * 2018-10-31 2020-05-07 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013187250A (ja) * 2012-03-06 2013-09-19 Toshiba Corp 半導体磁気記憶装置およびその製造方法
WO2016021468A1 (ja) * 2014-08-08 2016-02-11 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
JP2016046492A (ja) * 2014-08-26 2016-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2017059594A (ja) * 2015-09-14 2017-03-23 株式会社東芝 磁気メモリ
JP2017059679A (ja) * 2015-09-16 2017-03-23 株式会社東芝 磁気メモリ

Also Published As

Publication number Publication date
JP2019047001A (ja) 2019-03-22
WO2019045055A1 (ja) 2019-03-07
US11832526B2 (en) 2023-11-28
US20220140231A1 (en) 2022-05-05
US11264563B2 (en) 2022-03-01
JP6686990B2 (ja) 2020-04-22
US20210083175A1 (en) 2021-03-18
CN111052398A (zh) 2020-04-21

Similar Documents

Publication Publication Date Title
CN111052398B (zh) 自旋轨道转矩型磁化反转元件和磁存储器
US12048251B2 (en) Magnetoresistance effect element
US11276447B2 (en) Spin current magnetoresistance effect element and magnetic memory
CN109427965B (zh) 自旋流磁化旋转元件、自旋轨道转矩型磁阻效应元件
US11211547B2 (en) Spin-orbit-torque type magnetization rotating element, spin-orbit-torque type magnetoresistance effect element, and magnetic memory
CN110914974B (zh) 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件和磁存储器
JP6642773B2 (ja) スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、及びスピン流磁化反転素子の製造方法
JP2019047120A (ja) スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
US10998493B2 (en) Spin-orbit-torque magnetoresistance effect element and magnetic memory
JP2018026525A (ja) スピン流磁化反転素子、素子集合体及びスピン流磁化反転素子の製造方法
JP2018182256A (ja) スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
JP2019204948A (ja) スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ
JPWO2019150532A1 (ja) データの書き込み方法、検査方法、スピン素子の製造方法及び磁気抵抗効果素子
JP2019041098A (ja) スピン流磁気抵抗効果素子及び磁気メモリ
CN114373780A (zh) 磁畴壁移动元件及磁阵列
CN111279489B (zh) 自旋轨道转矩型磁阻效应元件及磁存储器
JP7124788B2 (ja) スピン流磁化回転型磁気抵抗効果素子、及び磁気メモリ
JP6485588B1 (ja) データの書き込み方法
US11925123B2 (en) Spin-orbit torque type magnetization rotational element, spin-orbit torque type magnetoresistance effect element, and magnetic memory
JP2020188138A (ja) 記憶素子、半導体装置及び磁気記録アレイ
US11264071B2 (en) Magnetoresistance effect element and magnetic memory
JP7183703B2 (ja) スピン軌道トルク型磁気抵抗効果素子及びスピン軌道トルク型磁気抵抗効果素子の製造方法
CN115000291A (zh) 磁器件
WO2023026481A1 (ja) 磁気抵抗効果素子及び磁気メモリ

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant